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Method for measuring vcsel reverse bias leakage in an optical module

Info

Publication number
WO2006053325A3
WO2006053325A3 PCT/US2005/041373 US2005041373W WO2006053325A3 WO 2006053325 A3 WO2006053325 A3 WO 2006053325A3 US 2005041373 W US2005041373 W US 2005041373W WO 2006053325 A3 WO2006053325 A3 WO 2006053325A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
reverse
testing
vcsel
die
bias
Prior art date
Application number
PCT/US2005/041373
Other languages
French (fr)
Other versions
WO2006053325A2 (en )
Inventor
Darren Crews
Original Assignee
Intel Corp
Darren Crews
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261Non-optical elements, e.g. laser driver components, heaters
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting lasers (SE-lasers)
    • H01S5/183Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity

Abstract

Reverse bias leakage testing may be used to determine the health of a vertical cavity surface emitting laser (VCSEL). When VCSELs are integrated on a die with other electronic devices such testing may damage the other electronic devices or be prohibited by circuits on the die designed to protect the electronics from being reverse biased. Accordingly, reverse bias testing may be facilitated by providing a second ground pad, separate from the die ground pad, specific to the VCSEL.
PCT/US2005/041373 2004-11-15 2005-11-09 Method for measuring vcsel reverse bias leakage in an optical module WO2006053325A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10989175 US7295590B2 (en) 2004-11-15 2004-11-15 Method for measuring VCSEL reverse bias leakage in an optical module
US10/989,175 2004-11-15

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20050851672 EP1813004A2 (en) 2004-11-15 2005-11-09 Method for measuring vcsel reverse bias leakage in an optical module
JP2007541443A JP5028664B2 (en) 2004-11-15 2005-11-09 Method of measuring the vcsel reverse bias leakage in the optical module

Publications (2)

Publication Number Publication Date
WO2006053325A2 true WO2006053325A2 (en) 2006-05-18
WO2006053325A3 true true WO2006053325A3 (en) 2006-07-27

Family

ID=36283709

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/041373 WO2006053325A3 (en) 2004-11-15 2005-11-09 Method for measuring vcsel reverse bias leakage in an optical module

Country Status (4)

Country Link
US (1) US7295590B2 (en)
JP (1) JP5028664B2 (en)
EP (1) EP1813004A2 (en)
WO (1) WO2006053325A3 (en)

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US7575380B2 (en) * 2004-10-15 2009-08-18 Emcore Corporation Integrated optical fiber and electro-optical converter
US8238699B2 (en) * 2005-03-04 2012-08-07 Finisar Corporation Semiconductor-based optical transceiver
US7482828B2 (en) * 2005-07-13 2009-01-27 Finisar Corporation Methods and apparatus for device testing at the wafer level
US8436460B1 (en) * 2007-05-04 2013-05-07 Cypress Semiconductor Corporation Multiple die paddle leadframe and semiconductor device package
JP4645655B2 (en) * 2008-02-04 2011-03-09 富士ゼロックス株式会社 The optical transmission module
US7915158B2 (en) * 2008-06-23 2011-03-29 International Business Machines Corporation Method for forming an on-chip high frequency electro-static discharge device
US7768762B2 (en) * 2008-06-23 2010-08-03 International Business Machines Corporation Design structure for an on-chip high frequency electro-static discharge device
US8279572B2 (en) * 2008-06-23 2012-10-02 International Business Machines Corporation Structure for an on-chip high frequency electro-static discharge device
US7759243B2 (en) 2008-06-23 2010-07-20 International Business Machines Corporation Method for forming an on-chip high frequency electro-static discharge device
JP2011096957A (en) 2009-11-02 2011-05-12 Yazaki Corp Method and apparatus for detection of fault in vcsel
CN104793129A (en) * 2015-05-04 2015-07-22 上海坤锐电子科技有限公司 Auxiliary circuit design method adopting EMMI for chip static leakage detection
CN104898035A (en) * 2015-06-15 2015-09-09 山东晶导微电子有限公司 High-temperature reverse bias testing system for real-time data collection

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US5757027A (en) * 1995-11-06 1998-05-26 International Business Machines Corporation Semiconductor wafer testing method and apparatus
EP0933842A2 (en) * 1998-01-30 1999-08-04 Motorola, Inc. Semiconductor laser having electro-static discharge protection

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US5734672A (en) * 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
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US5757027A (en) * 1995-11-06 1998-05-26 International Business Machines Corporation Semiconductor wafer testing method and apparatus
EP0933842A2 (en) * 1998-01-30 1999-08-04 Motorola, Inc. Semiconductor laser having electro-static discharge protection

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
NEITZERT H C: "ESD-induced degradation of vertical-cavity surface-emitting lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 19, 14 September 2000 (2000-09-14), pages 1620 - 1621, XP006015706, ISSN: 0013-5194 *
PU R ET AL: "HYBRID INTEGRATION OF VCSEL'S TO CMOS INTEGRATED CIRCUITS", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 5, no. 2, March 1999 (1999-03-01), pages 201 - 208, XP000865281, ISSN: 1077-260X *
SONG J I ET AL: "MONOLITHIC ARRAYS OF SURFACE-EMITTING LASER NOR LOGIC DEVICES", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 5, no. 8, 1 August 1993 (1993-08-01), pages 902 - 904, XP000399640, ISSN: 1041-1135 *

Also Published As

Publication number Publication date Type
JP2008520113A (en) 2008-06-12 application
WO2006053325A2 (en) 2006-05-18 application
US20060104328A1 (en) 2006-05-18 application
US7295590B2 (en) 2007-11-13 grant
JP5028664B2 (en) 2012-09-19 grant
EP1813004A2 (en) 2007-08-01 application

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