WO2006043214A2 - Master substrate and method of manufacturing a high-density relief structure - Google Patents
Master substrate and method of manufacturing a high-density relief structure Download PDFInfo
- Publication number
- WO2006043214A2 WO2006043214A2 PCT/IB2005/053355 IB2005053355W WO2006043214A2 WO 2006043214 A2 WO2006043214 A2 WO 2006043214A2 IB 2005053355 W IB2005053355 W IB 2005053355W WO 2006043214 A2 WO2006043214 A2 WO 2006043214A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- recording
- layer
- layers
- marks
- stack
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/261—Preparing a master, e.g. exposing photoresist, electroforming
Definitions
- Relief structures that are manufactured on the basis of optical processes can, for example, be used as a stamper for the mass-replication of read-only memory (ROM) and pre-grooved write-once (R) and rewritable (RE) discs.
- ROM read-only memory
- R write-once
- RE rewritable
- mastering a thin photosensitive layer, spincoated on a glass substrate, is illuminated with a modulated focused laser beam. The modulation of the laser beam causes that some parts of the disc are being exposed by UV light while the intermediate areas in between the pits remain unexposed. While the disc rotates, and the focused laser beam is gradually pulled to the outer side of the disc, a spiral of alternating illuminated areas remains.
- the exposed areas are being dissolved in a so-called development process to end up with physical holes inside the photo-resist layer.
- Alkaline liquids such as NaOH and KOH are used to dissolve the exposed areas.
- the structured surface is subsequently covered with a thin Ni layer.
- this sputter-deposited Ni layer is further grown to a thick manageable Ni substrate with the inverse pit structure. This Ni substrate with protruding bumps is separated from the substrate with unexposed areas and is called the stamper.
- ROM discs contain a spiral of alternating pits and lands representing the encoded data.
- a reflection layer metallic or other kind of material with different index of refraction coefficient
- the data track pitch has the same order of magnitude as the size of the optical readout/write spot to ensure optimum data capacity.
- the pit width in a ROM disc is typically half of the pitch between adjacent data tracks.
- LBR Laser Beam Recorder
- BD mastering a deep UV laser with 257 nm wavelength is used in combination with a high NA lens (0.9 for far-field and 1.25 for liquid immersion mastering).
- a next generation LBR is required to make a stamper for the current optical disc generation.
- An additional disadvantage of conventional photoresist mastering is the cumulative photon effect. The degradation of the photo-sensitive compound in the photoresist layer is proportional to the amount of illumination.
- the sides of the focused Airy spot also illuminates the adjacent traces during writing of pits in the central track. This multiple exposure leads to local broadening of the pits and therefore to an increased pit noise (jitter). Also for reduction of cross-illumination, an as small as possible focused laser spot is required.
- Another disadvantage of photoresist materials as used in conventional mastering is the length of the polymer chains present in the photoresist. Dissolution of the exposed areas leads to rather rough side edges due to the long polymer chains.
- phase-transition mastering PTM
- Phase-transition materials can be transformed from the initial unwritten state to a different state via laser-induced heating. Heating of the recording stack can, for example, cause mixing, melting, amorphisation, phase-separation, decomposition, etc.
- One of the two phases dissolves faster in acids or alkaline development liquids than the other phase does.
- a written data pattern can be transformed to a high-density relief structure with protruding bumps or pits.
- the patterned substrate can be used as stamper for the mass- fabrication of high-density of optical discs or as stamp for micro-contact printing. It has been proposed to use fast-growth phase-change materials and recording stacks for phase-transition mastering.
- the growth-dominated phase-change materials possess a high contrast in dissolution rate of the amorphous and crystalline phase.
- a recording stack for obtaining a high-density relief structure, comprising a first recording layer on top of a second recording layer, the recording layers being supported by a substrate layer, wherein, upon projecting light on the recording layers, a local interaction of the recording layers leads to marks on the basis of a local change of the properties with respect to chemical agents of the recording layers. Due to a laser induced heating the two recording layers are able to chemically interact with each other. In this way a mixed state is locally obtained. Since the mixed state has different properties in relation to chemical agents than adjacent regions, a relief structure can be manufactured by applying a chemical agent, i.e. a solvent to the illuminated recording stack.
- the recording layers have preferably the same thickness.
- a thickness between 10 and 60 nm is proposed.
- the lower values are proposed for shallow relief structures, for example, pre-grooved structures for rewritable or write-once discs, the higher values are meant for high-density pit structures.
- a heat-sink layer is arranged between the substrate and the adjacent recording layer.
- the heat-sink layer which is generally provided as a metallic layer is able to remove excessive heat deposited in the recording stack due to the laser induced heating. Metal alloys comprising Ag, Al, etc. may be used for the heat sink layer.
- the thickness ranges between 20 and 150nm, preferably between 50 and 100 nm.
- an interface layer is arranged between the heat-sink layer and the adjacent recording layer.
- Such an interface layer may serve as an etch stop in order to provide pits of a defined depth.
- the interface layer may be etchable as well in order to increase the depths of the pits.
- Conventional dielectric layers such as ZnS-SiO 2 , SiC, Si 3 N 4 , Ai 2 O 3 etc. are used as interface layers. The thickness ranges between 5 and 100 nm, preferably between 10 and 30 nm.
- a protection layer is arranged on top of the recording stack.
- the protection layer is made of a material that well dissolves in the agents applied for preparing the relief structure.
- the layer is added to prevent a migration of any material during heating, which could mainly appear because of centrifugal forces during the rotation of the substrate.
- the protection layer may be applied to improve the optical properties of the recording stack, with respect to reflection and absorption.
- the protection layer may be made of ZnS-SiO 2 , photoresist, organic polymers like PMMA and dyes as well as thin metal sheets like Ag, Al, Cu etc.
- the thickness of the protection layer is preferably between 5 and 50 nm.
- the invention is particularly advantageous in relation to an embodiment in which a stack of n pairs, n > 1, of first and second recording layers is provided.
- the present invention is not restricted to a single pair of recording layers, but rather a larger number of pairs can be provided, so as to be able to prepare deeper pits into the relief structure.
- the pairs of recording stacks, comprising the two recording layers, are possibly separated by interface layers.
- one of the recording layers comprises In and the other recording layer comprises Sn. Also in this example both orders of appearance as the first and the second recording layers are possible.
- the invention is particularly advantageous in relation to an embodiment in which an interface layer is arranged between the first and second recording layers. An additional interface layer between the recording layers is used to provide more stability to the unwritten areas.
- the interface layer should break down at the recording temperatures, which are between 250 and 800 0 C, to then enable the required interlayer diffusion.
- the interface layer has a preferred thickness between 1 and 5 nm.
- the marks have a smaller dissolution rate with respect to a particular chemical agent than regions of the first and the second recording layers adjacent to the marks.
- both the first and the second recording layers can be removed, leading to a relief structure having the height of both recording layers.
- the written marks are the bumps in this relief structure.
- the marks have a larger dissolution rate with respect to a particular chemical agent than regions of the first and the second recording layers adjacent to the marks.
- etching a relief structure having a depth of the first and second recording layers is obtained.
- pits are obtained at the positions of the written marks.
- the marks and adjacent regions of the first recording layer have a larger dissolution rate than regions of the second recording layer adjacent to the marks.
- etching leads to a removal of the written marks and the first recording layer. Consequently, a relief structure with the height of the second recording layer remains with pits at the positions of the written marks.
- the invention is particularly advantageous in relation to an embodiment in which the recording layers serve as a mask.
- a mask is provided for the further etching of underlying layers, particularly an interface layer or even the substrate.
- the invention further relates to a method of producing an optical data carrier using a recording stack according to the present invention.
- Figure 1 shows a schematic cross section through a master substrate according to the present invention before processing
- Figure 2 shows a schematic cross section through a master substrate according to the present invention with locally interacted regions
- Figure 3 shows a schematic cross section through a first embodiment of a master substrate according to the present invention after being processed with an etch liquid
- Figure 4 shows a schematic cross section through a second embodiment of a master substrate according to the present invention after being processed with an etch liquid
- Figure 5 shows a schematic cross section through a third embodiment of a master substrate according to the present invention after being processed with an etch liquid
- Figure 6 shows microscopic pictures illustrating traces written in accordance with the present invention
- Figure 7 shows an AFM (atomic force microscope) measurement at the crossing of a written trace in a Cu-Si-recording stack after treatment with an etch liquid
- Figure 8 shows a schematic cross section through a fourth embodiment of a master substrate according to the present invention after being processed with an etch liquid.
- FIG. 1 shows a schematic cross section through a master substrate according to the present invention before processing.
- Figure 2 shows a schematic cross section through a master substrate according to the present invention with locally interacted regions.
- the recording stack 100 comprises a first recording layer 10 on top of a second recording layer 12.
- the two recording layers 10, 12 are supported on a substrate 14. Additional layers, for example an interface layer between the recording layers 10, 12, a metallic heat sink layer between the substrate 14 and the second recording layer 12 and an interface layer between the second recording layer 12 and the heat sink layer, and a protection layer on top of the first recording layer 10 are not shown for the sake of simplicity.
- a focused modulated laser beam is directed onto the top layer of the recording stack 100, thereby inducing a local heating and thus a thermally induced interaction between the recording stack materials.
- Cu and Si are taken as examples for the recording materials in the recording layers 10 and 12, respectively.
- the recording layers have preferably the same thickness. A thickness between 10 and 60 ran is preferred.
- the interface and metal layers are used to optimize the laser light absorption and to control the heat diffusion during writing of the data.
- Conventional dielectric layers such as ZnS-SiO 2 , SiC, Si 3 N 4 , Al 2 O 3 etc. are used as interface layer.
- the thickness ranges between 5 and 100 nm, preferably between 10 and 30 nm.
- Metal alloys comprising Ag, Al, etc. may be used for the metal layer.
- the thickness is between 20 and 150 nm, preferably between 50 and 100 nm.
- the resulting structure is shown in Fig. 2. Due to laser induced heating marks 16 that consist of a Cu suicide are generated.
- Figure 3 shows a schematic cross section through a first embodiment of a master substrate according to the present invention after being partly processed.
- the unwritten first recording layer has been removed, and a bump structure remains.
- the unwritten Cu area is removed via etching with an acid solution, such as HNO 3 , HCl, or H 2 SO 4 (sulphuric acid).
- HNO 3 oxidized nitrogen
- HCl sulphuric acid
- Other etch liquids may be possible as well. Suitable concentrations range between 1 % and 50 %. Silicon is insoluble for these etch liquids.
- the bumps are represented by the written marks 16.
- the height of the bumps equals the thickness of the first recording layer.
- An inverse replica of this bump structure contains pits with a depth equal to the thickness of the first recording layer.
- Figure 4 shows a schematic cross section through a second embodiment of a master substrate according to the present invention after being partly processed.
- the written marks have a larger dissolution rate with respect to a particular agent than the adjacent regions of the recording layers 10, 12.
- a relief structure can be obtained that has a height of both recording layers 10, 12 taken together with pits at the original positions of the marks.
- Figure 5 shows a schematic cross section through a third embodiment of a master substrate according to the present invention after being partly processed.
- a relief structure having a depth of the second recording layer 12 can be obtained. This is achieved by providing a second recording layer 12 that has a lower dissolution rate than the written marks and the first recording layer.
- Figure 6 shows an example of traces written in a Si-Cu recording stack.
- the traces were recorded at nominal write power (a: 15 run Si layer and 15nm Cu layer) and overpower (b: 40 nm Si layer and 40 nm Cu layer).
- the sample was not yet treated with an etch liquid.
- the write spot had a width of 100 ⁇ m, resulting in 100 ⁇ m wide traces in which the Si and Cu films have chemically interacted.
- the left image is an example of a well- written trace.
- the formed suicide, the written area 20 has a different optical contrast than the unwritten area 22.
- the recording stack had a 15 nm Cu and a 15 nm Si layer.
- the right image shows an example of an trace 24 written with overpower, leading to unwanted bubble formation in the recording stack; the thickness of the Si and Cu layers was 40 nm.
- the unwritten trace is shown at 26.
- Figure 7 shows an AFM measurement at the crossing of a written trace in a Cu-Si-recording stack after treatment with an etch liquid (5% HNO 3 ).
- the layer thickness of the Cu and Si film was 15 nm.
- the image (b) is a surface scan, the image (a) is an average cross-section of the lower image.
- the left plateau indicates the written phase (suicide), the right plateau refers to the initial phase.
- the image (b) partly shows the formed suicide (the left part of the image) and the initial recording stack (right part of the image).
- the corresponding points in images (a) and (b) are marked with A and B, respectively.
- FIG. 8 shows a schematic cross section through a fourth embodiment of a master substrate according to the present invention after being partly processed.
- the recording stack 100" provides the possibility for obtaining a relief structure having a height of both recording layers taken together. This is achieved by providing materials that lead to marks having a lower dissolution rate than the recording layers. Equivalents and modifications not described above may also be employed without departing from the scope of the invention, which is defined in the accompanying claims.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05799437A EP1805757A2 (en) | 2004-10-19 | 2005-10-12 | Master substrate and method of manufacturing a high-density relief structure |
CA002584102A CA2584102A1 (en) | 2004-10-19 | 2005-10-12 | Master substrate and method of manufacturing a high-density relief structure |
US11/577,034 US20090201793A1 (en) | 2004-10-19 | 2005-10-12 | Master substrate and method of manufacturing a high-density relief structure |
JP2007537432A JP2008517416A (en) | 2004-10-19 | 2005-10-12 | Master substrate and manufacturing method of high-density uneven structure |
MX2007004251A MX2007004251A (en) | 2004-10-19 | 2005-10-12 | Master substrate and method of manufacturing a high-density relief structure. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04105155 | 2004-10-19 | ||
EP04105155.8 | 2004-10-19 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2006043214A2 true WO2006043214A2 (en) | 2006-04-27 |
WO2006043214A3 WO2006043214A3 (en) | 2006-06-29 |
WO2006043214A8 WO2006043214A8 (en) | 2006-07-27 |
Family
ID=35686202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2005/053355 WO2006043214A2 (en) | 2004-10-19 | 2005-10-12 | Master substrate and method of manufacturing a high-density relief structure |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090201793A1 (en) |
EP (1) | EP1805757A2 (en) |
JP (1) | JP2008517416A (en) |
KR (1) | KR20070073911A (en) |
CN (1) | CN101044564A (en) |
CA (1) | CA2584102A1 (en) |
MX (1) | MX2007004251A (en) |
TW (1) | TW200620271A (en) |
WO (1) | WO2006043214A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010149456A1 (en) * | 2009-06-24 | 2010-12-29 | Singulus Mastering B.V. | Master disc having a ptm layer and a nickel undercoat |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019057682A (en) * | 2017-09-22 | 2019-04-11 | ルネサスエレクトロニクス株式会社 | Method of manufacturing semiconductor device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0596439A2 (en) * | 1992-11-05 | 1994-05-11 | Matsushita Electric Industrial Co., Ltd. | Method of making a master disc usable for the production of optical discs |
JPH06171236A (en) * | 1992-10-05 | 1994-06-21 | Ricoh Co Ltd | Optical recording medium |
US5459018A (en) * | 1990-03-08 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, a manufacturing method thereof and an optical information recording and reproducing method using the medium |
US6030556A (en) * | 1997-07-08 | 2000-02-29 | Imation Corp. | Optical disc stampers and methods/systems for manufacturing the same |
US20020115023A1 (en) * | 2001-02-16 | 2002-08-22 | Junji Hirokane | Method for forming micropatterns |
US20030013040A1 (en) * | 2000-03-02 | 2003-01-16 | Koichiro Kishima | Method for producing recording medium, method for producing stamper of recording medium, apparatus for producing recording medium, and apparatus for producing stamper of recording medium |
US20040190432A1 (en) * | 2003-01-20 | 2004-09-30 | Katsutaro Ichihara | Optical recording medium and optical recording-reproducing method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3016256B2 (en) * | 1991-01-11 | 2000-03-06 | 日本ビクター株式会社 | Stamper for high density recording disk and method of manufacturing the same |
US6706465B1 (en) * | 1999-09-01 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Optical disk stamper mastering method and apparatus |
-
2005
- 2005-10-12 US US11/577,034 patent/US20090201793A1/en not_active Abandoned
- 2005-10-12 CN CNA2005800357696A patent/CN101044564A/en active Pending
- 2005-10-12 EP EP05799437A patent/EP1805757A2/en not_active Withdrawn
- 2005-10-12 WO PCT/IB2005/053355 patent/WO2006043214A2/en active Application Filing
- 2005-10-12 JP JP2007537432A patent/JP2008517416A/en active Pending
- 2005-10-12 MX MX2007004251A patent/MX2007004251A/en not_active Application Discontinuation
- 2005-10-12 KR KR1020077011088A patent/KR20070073911A/en not_active Application Discontinuation
- 2005-10-12 CA CA002584102A patent/CA2584102A1/en not_active Abandoned
- 2005-10-14 TW TW094135913A patent/TW200620271A/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459018A (en) * | 1990-03-08 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, a manufacturing method thereof and an optical information recording and reproducing method using the medium |
JPH06171236A (en) * | 1992-10-05 | 1994-06-21 | Ricoh Co Ltd | Optical recording medium |
EP0596439A2 (en) * | 1992-11-05 | 1994-05-11 | Matsushita Electric Industrial Co., Ltd. | Method of making a master disc usable for the production of optical discs |
US6030556A (en) * | 1997-07-08 | 2000-02-29 | Imation Corp. | Optical disc stampers and methods/systems for manufacturing the same |
US20030013040A1 (en) * | 2000-03-02 | 2003-01-16 | Koichiro Kishima | Method for producing recording medium, method for producing stamper of recording medium, apparatus for producing recording medium, and apparatus for producing stamper of recording medium |
US20020115023A1 (en) * | 2001-02-16 | 2002-08-22 | Junji Hirokane | Method for forming micropatterns |
US20040190432A1 (en) * | 2003-01-20 | 2004-09-30 | Katsutaro Ichihara | Optical recording medium and optical recording-reproducing method |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 503 (M-1677), 21 September 1994 (1994-09-21) & JP 06 171236 A (RICOH CO LTD), 21 June 1994 (1994-06-21) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010149456A1 (en) * | 2009-06-24 | 2010-12-29 | Singulus Mastering B.V. | Master disc having a ptm layer and a nickel undercoat |
EP2273501A1 (en) * | 2009-06-24 | 2011-01-12 | Singulus Mastering B.V. | Master disc having a PTM layer and a nickel undercoat |
Also Published As
Publication number | Publication date |
---|---|
WO2006043214A8 (en) | 2006-07-27 |
MX2007004251A (en) | 2007-06-14 |
KR20070073911A (en) | 2007-07-10 |
CA2584102A1 (en) | 2006-04-27 |
WO2006043214A3 (en) | 2006-06-29 |
EP1805757A2 (en) | 2007-07-11 |
JP2008517416A (en) | 2008-05-22 |
CN101044564A (en) | 2007-09-26 |
TW200620271A (en) | 2006-06-16 |
US20090201793A1 (en) | 2009-08-13 |
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