WO2005119695A2 - Memory device with user configurable density/performance - Google Patents
Memory device with user configurable density/performance Download PDFInfo
- Publication number
- WO2005119695A2 WO2005119695A2 PCT/US2005/019898 US2005019898W WO2005119695A2 WO 2005119695 A2 WO2005119695 A2 WO 2005119695A2 US 2005019898 W US2005019898 W US 2005019898W WO 2005119695 A2 WO2005119695 A2 WO 2005119695A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- configuration
- memory
- density
- command
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007515682A JP2008502090A (en) | 2004-06-04 | 2005-06-03 | Memory device with user-configurable density / operation performance |
EP05760419A EP1754231A2 (en) | 2004-06-04 | 2005-06-03 | Memory device with user configurable density/performance |
KR1020077000135A KR100888113B1 (en) | 2004-06-04 | 2005-06-03 | Memory device with user configurable density/performance |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/861,646 | 2004-06-04 | ||
US10/861,646 US8082382B2 (en) | 2004-06-04 | 2004-06-04 | Memory device with user configurable density/performance |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005119695A2 true WO2005119695A2 (en) | 2005-12-15 |
WO2005119695A3 WO2005119695A3 (en) | 2006-02-02 |
Family
ID=35310045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/019898 WO2005119695A2 (en) | 2004-06-04 | 2005-06-03 | Memory device with user configurable density/performance |
Country Status (5)
Country | Link |
---|---|
US (2) | US8082382B2 (en) |
EP (1) | EP1754231A2 (en) |
JP (1) | JP2008502090A (en) |
KR (1) | KR100888113B1 (en) |
WO (1) | WO2005119695A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101329914A (en) * | 2007-06-22 | 2008-12-24 | 三星电子株式会社 | Semiconductor device, memory reading method and memory programming method |
Families Citing this family (39)
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US7469381B2 (en) | 2007-01-07 | 2008-12-23 | Apple Inc. | List scrolling and document translation, scaling, and rotation on a touch-screen display |
US7535759B2 (en) * | 2004-06-04 | 2009-05-19 | Micron Technology, Inc. | Memory system with user configurable density/performance option |
US7336531B2 (en) * | 2004-06-25 | 2008-02-26 | Micron Technology, Inc. | Multiple level cell memory device with single bit per cell, re-mappable memory block |
US7295472B2 (en) | 2005-04-11 | 2007-11-13 | Stmicroelectronics S.R.L. | Integrated electronic non-volatile memory device having nand structure |
US7564721B2 (en) * | 2006-05-25 | 2009-07-21 | Micron Technology, Inc. | Method and apparatus for improving storage performance using a background erase |
US7738291B2 (en) * | 2007-03-12 | 2010-06-15 | Micron Technology, Inc. | Memory page boosting method, device and system |
US7460398B1 (en) * | 2007-06-19 | 2008-12-02 | Micron Technology, Inc. | Programming a memory with varying bits per cell |
KR20090021508A (en) * | 2007-08-27 | 2009-03-04 | 삼성전자주식회사 | Flash memory device storing data with multi-bit and single-bit form and program method thereof |
US7817467B2 (en) | 2007-09-07 | 2010-10-19 | Micron Technology, Inc. | Memory controller self-calibration for removing systemic influence |
WO2009064619A1 (en) * | 2007-11-16 | 2009-05-22 | Rambus Inc. | Apparatus and method for segmentation of a memory device |
KR20090055314A (en) | 2007-11-28 | 2009-06-02 | 삼성전자주식회사 | Nonvolatile memory system being capable of reducing read disturbance |
US8341331B2 (en) * | 2008-04-10 | 2012-12-25 | Sandisk Il Ltd. | Method, apparatus and computer readable medium for storing data on a flash device using multiple writing modes |
US20100057976A1 (en) * | 2008-08-26 | 2010-03-04 | Menahem Lasser | Multiple performance mode memory system |
US9009358B1 (en) | 2008-09-23 | 2015-04-14 | Western Digital Technologies, Inc. | Configuring a data storage device with a parameter file interlocked with configuration code |
US7984200B1 (en) | 2008-09-23 | 2011-07-19 | Western Digital Technologies, Inc. | Configuring a data storage device with a configuration data record set in response to a configuration code |
US7852671B2 (en) | 2008-10-30 | 2010-12-14 | Micron Technology, Inc. | Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array |
US8407400B2 (en) | 2008-11-12 | 2013-03-26 | Micron Technology, Inc. | Dynamic SLC/MLC blocks allocations for non-volatile memory |
KR101519931B1 (en) | 2009-03-06 | 2015-05-13 | 삼성전자주식회사 | Resistive memory device having a stack structure memory system having the resistive memory device and method of setting cell type of stacked memory cell array layers |
US8489841B1 (en) | 2009-12-10 | 2013-07-16 | Western Digital Technologies, Inc. | Manufacturing station dynamically configuring a data storage device with a validated configuration data record |
US8671240B2 (en) * | 2011-07-18 | 2014-03-11 | Memory Technologies Llc | User selectable balance between density and reliability |
KR20130057086A (en) * | 2011-11-23 | 2013-05-31 | 삼성전자주식회사 | Method of programming a nonvolatile memory device |
US8804452B2 (en) | 2012-07-31 | 2014-08-12 | Micron Technology, Inc. | Data interleaving module |
JP5744118B2 (en) | 2013-07-17 | 2015-07-01 | ウィンボンド エレクトロニクス コーポレーション | Semiconductor memory device |
KR20180128091A (en) | 2013-09-03 | 2018-11-30 | 애플 인크. | User interface for manipulating user interface objects with magnetic properties |
US11068128B2 (en) | 2013-09-03 | 2021-07-20 | Apple Inc. | User interface object manipulations in a user interface |
KR102305362B1 (en) * | 2013-09-03 | 2021-09-24 | 애플 인크. | User interface object manipulations in a user interface |
WO2015200889A1 (en) | 2014-06-27 | 2015-12-30 | Apple Inc. | Electronic device with rotatable input mechanism for navigating calendar application |
CN113824998A (en) | 2014-09-02 | 2021-12-21 | 苹果公司 | Music user interface |
TWI582641B (en) | 2014-09-02 | 2017-05-11 | 蘋果公司 | Button functionality |
WO2016036509A1 (en) | 2014-09-02 | 2016-03-10 | Apple Inc. | Electronic mail user interface |
US20160062571A1 (en) | 2014-09-02 | 2016-03-03 | Apple Inc. | Reduced size user interface |
US10096355B2 (en) | 2015-09-01 | 2018-10-09 | Sandisk Technologies Llc | Dynamic management of programming states to improve endurance |
US9620201B1 (en) * | 2016-04-26 | 2017-04-11 | Sandisk Technologies Llc | Storage system and method for using hybrid blocks with sub-block erase operations |
US10152237B2 (en) | 2016-05-05 | 2018-12-11 | Micron Technology, Inc. | Non-deterministic memory protocol |
US10534540B2 (en) | 2016-06-06 | 2020-01-14 | Micron Technology, Inc. | Memory protocol |
US9940052B2 (en) | 2016-09-14 | 2018-04-10 | Micron Technology, Inc. | Memory device configuration commands |
US20180292991A1 (en) * | 2017-04-11 | 2018-10-11 | Micron Technology, Inc. | Memory protocol with programmable buffer and cache size |
US11435830B2 (en) | 2018-09-11 | 2022-09-06 | Apple Inc. | Content-based tactile outputs |
US11537511B2 (en) | 2020-08-05 | 2022-12-27 | Infineon Technologies LLC | Dynamic configuring of reliability and density of non-volatile memories |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010038553A1 (en) * | 2000-02-25 | 2001-11-08 | Advanced Micro Devices, Inc. | Mixed mode multi-level memory |
US6363008B1 (en) * | 2000-02-17 | 2002-03-26 | Multi Level Memory Technology | Multi-bit-cell non-volatile memory with maximized data capacity |
US20020057595A1 (en) * | 2000-01-19 | 2002-05-16 | Shinichi Kobayashi | Variable capacity semiconductor memory device |
US6466476B1 (en) * | 2001-01-18 | 2002-10-15 | Multi Level Memory Technology | Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US6349395B2 (en) | 1997-09-17 | 2002-02-19 | Kabushiki Kaisha Toshiba | Configurable integrated circuit and method of testing the same |
US6209069B1 (en) * | 1998-05-11 | 2001-03-27 | Intel Corporation | Method and apparatus using volatile lock architecture for individual block locking on flash memory |
US6542909B1 (en) * | 1998-06-30 | 2003-04-01 | Emc Corporation | System for determining mapping of logical objects in a computer system |
US6640262B1 (en) | 1999-12-20 | 2003-10-28 | 3Com Corporation | Method and apparatus for automatically configuring a configurable integrated circuit |
JP4282197B2 (en) * | 2000-01-24 | 2009-06-17 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory device |
EP1193715A1 (en) * | 2000-09-20 | 2002-04-03 | STMicroelectronics S.r.l. | Nonvolatile memory device, having parts with different access time, reliability and capacity |
US6662285B1 (en) | 2001-01-09 | 2003-12-09 | Xilinx, Inc. | User configurable memory system having local and global memory blocks |
US6925558B2 (en) * | 2001-03-29 | 2005-08-02 | Intel Corporation | System and method for selecting and loading configuration data into a register through the use of a first and second reset signal |
US6948026B2 (en) * | 2001-08-24 | 2005-09-20 | Micron Technology, Inc. | Erase block management |
GB0123415D0 (en) * | 2001-09-28 | 2001-11-21 | Memquest Ltd | Method of writing data to non-volatile memory |
US6772276B2 (en) * | 2002-01-04 | 2004-08-03 | Intel Corporation | Flash memory command abstraction |
US7535759B2 (en) | 2004-06-04 | 2009-05-19 | Micron Technology, Inc. | Memory system with user configurable density/performance option |
-
2004
- 2004-06-04 US US10/861,646 patent/US8082382B2/en active Active
-
2005
- 2005-06-03 EP EP05760419A patent/EP1754231A2/en not_active Withdrawn
- 2005-06-03 WO PCT/US2005/019898 patent/WO2005119695A2/en active Application Filing
- 2005-06-03 JP JP2007515682A patent/JP2008502090A/en not_active Withdrawn
- 2005-06-03 KR KR1020077000135A patent/KR100888113B1/en active IP Right Grant
-
2011
- 2011-11-29 US US13/305,809 patent/US20120072653A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020057595A1 (en) * | 2000-01-19 | 2002-05-16 | Shinichi Kobayashi | Variable capacity semiconductor memory device |
US6363008B1 (en) * | 2000-02-17 | 2002-03-26 | Multi Level Memory Technology | Multi-bit-cell non-volatile memory with maximized data capacity |
US20010038553A1 (en) * | 2000-02-25 | 2001-11-08 | Advanced Micro Devices, Inc. | Mixed mode multi-level memory |
US6466476B1 (en) * | 2001-01-18 | 2002-10-15 | Multi Level Memory Technology | Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101329914A (en) * | 2007-06-22 | 2008-12-24 | 三星电子株式会社 | Semiconductor device, memory reading method and memory programming method |
JP2009004077A (en) * | 2007-06-22 | 2009-01-08 | Samsung Electronics Co Ltd | Non-volatile memory device and method of operating the same |
Also Published As
Publication number | Publication date |
---|---|
US20050273549A1 (en) | 2005-12-08 |
KR20070024702A (en) | 2007-03-02 |
JP2008502090A (en) | 2008-01-24 |
EP1754231A2 (en) | 2007-02-21 |
WO2005119695A3 (en) | 2006-02-02 |
US20120072653A1 (en) | 2012-03-22 |
KR100888113B1 (en) | 2009-03-13 |
US8082382B2 (en) | 2011-12-20 |
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