WO2005114756A3 - Antimonide mit neuen eigenschaftskombinationen - Google Patents

Antimonide mit neuen eigenschaftskombinationen Download PDF

Info

Publication number
WO2005114756A3
WO2005114756A3 PCT/EP2005/005178 EP2005005178W WO2005114756A3 WO 2005114756 A3 WO2005114756 A3 WO 2005114756A3 EP 2005005178 W EP2005005178 W EP 2005005178W WO 2005114756 A3 WO2005114756 A3 WO 2005114756A3
Authority
WO
WIPO (PCT)
Prior art keywords
antimonides
properties
novel combinations
antimonide
substituted
Prior art date
Application number
PCT/EP2005/005178
Other languages
English (en)
French (fr)
Other versions
WO2005114756A2 (de
Inventor
Hans-Josef Sterzel
Original Assignee
Basf Ag
Hans-Josef Sterzel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Ag, Hans-Josef Sterzel filed Critical Basf Ag
Publication of WO2005114756A2 publication Critical patent/WO2005114756A2/de
Publication of WO2005114756A3 publication Critical patent/WO2005114756A3/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Beschrieben werden thermoelektrische Generatoren oder Peltier-Anordnungen mit einem Antimonid als Halbleitermaterial. Wobei ein substituiertes Antimonid eingesetzt wird, in dem das Kristallgitter der Metallantimonide partiell mit Sulfiden, Seleniden und/oder Telluriden der Metalle Antimon, Silizium, Germanium, Zink, Blei, Arsen und/oder Bismut substituiert ist.
PCT/EP2005/005178 2004-05-18 2005-05-12 Antimonide mit neuen eigenschaftskombinationen WO2005114756A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004025065.0 2004-05-18
DE102004025065A DE102004025065A1 (de) 2004-05-18 2004-05-18 Antimonide mit neuen Eigenschaftskombinationen

Publications (2)

Publication Number Publication Date
WO2005114756A2 WO2005114756A2 (de) 2005-12-01
WO2005114756A3 true WO2005114756A3 (de) 2006-05-04

Family

ID=34969312

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/005178 WO2005114756A2 (de) 2004-05-18 2005-05-12 Antimonide mit neuen eigenschaftskombinationen

Country Status (3)

Country Link
DE (1) DE102004025065A1 (de)
TW (1) TW200602269A (de)
WO (1) WO2005114756A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1728880A1 (de) 2005-05-31 2006-12-06 Aarhus Universitet Verbesserte Thermoelektrische Materiale des n-Typs, Verfahren zur Herstellung und Verwendung derselben
DE102005060040A1 (de) * 2005-12-15 2007-06-21 BSH Bosch und Siemens Hausgeräte GmbH Schaltungsanordnung für ein Peltiermodul
WO2008028852A2 (de) * 2006-09-05 2008-03-13 Basf Se Dotierte bi-te-verbindungen für thermoelektrische generatoren und peltier-anordnungen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1342828A2 (de) * 2002-02-21 2003-09-10 Theodor Blum Wäschetrockner

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1342828A2 (de) * 2002-02-21 2003-09-10 Theodor Blum Wäschetrockner

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
BORSHCHEVSKY A ET AL: "Solid solution formation: improving the thermoelectric properties of skutterudites", THERMOELECTRICS, 1996., FIFTEENTH INTERNATIONAL CONFERENCE ON PASADENA, CA, USA 26-29 MARCH 1996, NEW YORK, NY, USA,IEEE, US, 26 March 1996 (1996-03-26), pages 112 - 116, XP010198948, ISBN: 0-7803-3221-0 *
CAILLAT T ET AL: "Zn-Sb alloys for thermoelectric power generation", ENERGY CONVERSION ENGINEERING CONFERENCE, 1996. IECEC 96., PROCEEDINGS OF THE 31ST INTERSOCIETY WASHINGTON, DC, USA 11-16 AUG. 1996, NEW YORK, NY, USA,IEEE, US, vol. 2, 11 August 1996 (1996-08-11), pages 905 - 909, XP010197849, ISBN: 0-7803-3547-3 *
DASHJAV, E. ET AL: "Optimization of the thermopower of the antimonide Mo3Sb7 by a partial Sb/Te substitution", JOURNAL OF MATERIALS CHEMISTRY, vol. 12, 3 January 2002 (2002-01-03), pages 345 - 349, XP002367080 *
FLEURIAL J-P ET AL: "Low thermal conductivity skutterudite materials for high performance thermoelectric power generation", ENERGY CONVERSION ENGINEERING CONFERENCE, 1996. IECEC 96., PROCEEDINGS OF THE 31ST INTERSOCIETY WASHINGTON, DC, USA 11-16 AUG. 1996, NEW YORK, NY, USA,IEEE, US, vol. 2, 11 August 1996 (1996-08-11), pages 914 - 919, XP010197851, ISBN: 0-7803-3547-3 *
FLEURIAL J-P ET AL: "New materials and devices for thermoelectric applications", IECEC '97. PROCEEDINGS OF THE 32ND INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE. ENERGY SYSTEMS, RENEWABLE ENERGY RESOURCES, ENVIRONMENTAL IMPACT AND POLICY IMPACTS ON ENERGY. HONOLULU, HI, JULY 27 - AUG. 1, 1997, INTERSOCIETY ENERGY CONVERS, vol. VOL. 3 & 4, 27 July 1997 (1997-07-27), pages 1080 - 1085, XP010269144, ISBN: 0-7803-4515-0 *
GEROVAC N ET AL: "Thermoelectric properties of n-type polyerystalline BixSb2-xTe3 alloys", THERMOELECTRICS, 2002. PROCEEDINGS ICT '02. TWENTY-FIRST INTERNATIONAL CONFERENCE ON AUG. 25-29, 2002, PISCATAWAY, NJ, USA,IEEE, 25 August 2002 (2002-08-25), pages 31 - 34, XP010637425, ISBN: 0-7803-7683-8 *
LEE C-S ET AL: "SYNTHESIS, STRUCTURE, AND PHYSICAL PROPERTIES OF MIXED VALENT MO2SBS2, THE FIRST SUPERCONDUCTING ANTIMONIDE-SULFIDE", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 15, no. 3, 11 February 2003 (2003-02-11), pages 780 - 786, XP001185310, ISSN: 0897-4756 *
WANG S ET AL: "Thermoelectric properties of Nb3SbxTe7-x compounds", THERMOELECTRICS, 2002. PROCEEDINGS ICT '02. TWENTY-FIRST INTERNATIONAL CONFERENCE ON AUG. 25-29, 2002, PISCATAWAY, NJ, USA,IEEE, 25 August 2002 (2002-08-25), pages 170 - 172, XP010637458, ISBN: 0-7803-7683-8 *

Also Published As

Publication number Publication date
WO2005114756A2 (de) 2005-12-01
DE102004025065A1 (de) 2005-12-08
TW200602269A (en) 2006-01-16

Similar Documents

Publication Publication Date Title
Thompson et al. Uniaxial-process-induced strained-Si: Extending the CMOS roadmap
US10804166B2 (en) Porous silicon relaxation medium for dislocation free CMOS devices
WO2005101515A3 (en) Process to improve transistor drive current through the use of strain
WO2006001915A3 (en) Semiconductor device with multiple semiconductor layers
WO2009125317A3 (en) Seebeck/peltier bidirectional thermo- electric conversion device using nanowires of conductor or semiconductor material
TW200601420A (en) Method of forming strained Si/SiGe on insulator with silicon germanium buffer
WO2006053258A3 (en) Method to enhance cmos transistor performance by inducing strain in the gate and channel
US20090095981A1 (en) Complementary metal oxide semiconductor device and method of manufacturing the same
WO2010080279A3 (en) Bulk-processed, enhanced figure-of-merit thermoelectric materials
TW200620554A (en) Patterned strained semiconductor substrate and device
SG129237A1 (en) Complementary metal oxide semiconductor transistortechnology using selective epitaxy of a strained silicon germanium layer
TW200608548A (en) Thermoelectric nano-wire devices
WO2005114756A3 (de) Antimonide mit neuen eigenschaftskombinationen
CN106537554B (zh) 包括鳍松弛的半导体装置的制造方法及相关结构
TW200520211A (en) Defect reduction by oxidation of silicon
WO2009098248A3 (de) Dotierte zinntelluride für thermoelektrische anwendungen
WO2013018016A3 (en) A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5
CN105185692A (zh) 应变弛豫方法、形成半导体层和半导体器件的方法
Chui et al. Source/drain germanium condensation for p-channel strained ultra-thin body transistors
Lee et al. Diamond-shaped Ge and Ge0. 9Si0. 1 gate-all-around nanowire FETs with four {111} facets by dry etch technology
CN109887884A (zh) 一种半导体器件的制造方法
WO2007112432A3 (en) Epitaxy of silicon-carbon substitutional solid solutions by ultra-fast annealing of amorphous material
EP1684355A3 (de) Halbleiteranordnungen mit Molybdänoxid und Verfahren zur Herstellung
JP2015509661A (ja) 単結晶の金属−半導体接合体の製造方法
US9559166B2 (en) Fabricating transistors having resurfaced source/drain regions with stressed portions

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase