WO2005083882A1 - Layered surface acoustic wave sensor - Google Patents
Layered surface acoustic wave sensor Download PDFInfo
- Publication number
- WO2005083882A1 WO2005083882A1 PCT/AU2005/000244 AU2005000244W WO2005083882A1 WO 2005083882 A1 WO2005083882 A1 WO 2005083882A1 AU 2005000244 W AU2005000244 W AU 2005000244W WO 2005083882 A1 WO2005083882 A1 WO 2005083882A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- saw
- interdigital electrodes
- frequency
- piezoelectric
- piezoelectric layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2462—Probes with waveguides, e.g. SAW devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0255—(Bio)chemical reactions, e.g. on biosensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/045—External reflections, e.g. on reflectors
Definitions
- This invention relates to improvements in Surface Acoustic Wave [SAW] devices and particularly layered SAW devices used as sensors. Background to the invention
- SAW devices are usually used in a closed loop with an amplifier to make an oscillator.
- USA patent 3,979,697 discloses an oscillator in which the "tank circuit” or feedback element is a surface acoustic wave (SAW) bandpass filter (delay line).
- USA patent 4,868,524 discloses an RF circuit to generate a stable carrier signal using a Voltage Controlled Saw Oscillator.
- USA patent 5,126,694 discloses A SAW stabilized oscillator includes a phase locking circuit which is phase locked to a lower frequency reference signal having an odd order difference with respect to the fundamental frequency of the SAW oscillator.
- USA patent 4562371 discloses a SAW device comprising a ZnO piezo layer on a cut crystalline silicon substrate that propagates Rayleigh waves.
- the surface acoustic waves polarizes in 3 directions and can be classified as longitudinal wave motion, Normal waves or shear horizontal waves.
- a class of shear horizontal [SH] waves are called Love waves which are propagated in layered devices that concentrate the wave energy in a highly confined region near to the surface.
- Rayleigh wave sensors have been useful in gaseous environments but they are not suitable for liquid environments because the surface-normal displacement causes strong radiative loss into the liquid.
- shear horizontal [SH] polarised wave modes are preferred since the particle displacement is parallel to the device surface and normal to the direction of propagation. This allows a wave to propagate in contact with a liquid without coupling excessive acoustic energy into the liquid.
- SH wave is distributed through the substrate and therefore does not have the same sensitivity as the SAW.
- Love waves which are SH-polarised guided surface waves may be used. The waves propagate in a layered structure consisting of a piezoelectric substrate and a guiding layer which couples the elastic waves generated in the substrate to the near surface.
- the interactions may be caused by mass density, elastic stiffness, liquid viscosity, electric and dielectric properties. The more sensitive is the device the smaller the quantities that can be measured.
- USA patent 5705 399 discloses a SAW sensor for liquid environments having an AT cut quartz piezo substrate with electrodes connected to a first side in contact with a liquid and a second side that is not in contact.
- the sensor may be used to detect biological species such as antigens.
- WO02/095940 discloses a love mode SAW sensor using a piezo layer of ZnO on a piezo electric quartz crystal. To improve the sensitivity of sensors the stability of the frequency of the device needs to be addressed.
- USA patent 6122954 discloses a SAW sensor with a resonant frequency range of 200 to 2000 MHz and a temperature control system.
- the present invention provides a surface acoustic wave sensor which incorporates a) a first layered SAW device consisting of a piezoelectric crystal with interdigital electrodes on its surface, and second piezoelectric layer over said interdigital electrodes b) a second layered SAW device consisting of a piezoelectric crystal with interdigital electrodes on its surface, a second piezoelectric layer over said interdigital electrodes and an analyte sensitive surface on said second piezoelectric layer c) both SAW devices are fabricated on the same substrate d) reflectors are located adjacent the interdigital electrodes in each saw device to reduce the bandwidth of the device e) the resonator circuits of each saw sensor incorporate amplifiers which are dependent .
- the operating frequency changes.
- the change of operating frequency is proportional to the magnitude of the target analyte in the environment.
- the oscillation system needs to have a high Q and a stable frequency response.
- the first layered SAW device as a reference sensor and fabricating them on the same substrate the effect of environmental noise can be reduced.
- reflectors By using reflectors to reduce the bandwidth the Q of the devices is increased.
- the piezoelectric substrate is cut for propagation of Love mode waves and may be quartz crystal, lithium Niobate [LiNbO 3 ], lithium tantalate [LiTaO 3 ], langasite or langatite.
- the second layer is a piezoelectric film such as layer is zinc oxide, AIN LiTaO3, LiTaO3 or quartz
- the second layer can be a non-piezoelectric which has a capability to confine the acoustic energy with itself such as silicon nitride, different types of metal oxides, polymers or metal compounds.
- a preferred piezo substrate is 90° rotated ST-cut quartz crystal which has a propagation speed of 5000m/s and the dominant wave is SSBW (Surface Skimming Bulk Wave) and has zero coupling to other modes. It is dominantly a Shear Horizontal (SH) bulk wave and has a low temperature coefficient. Its major disadvantage is a high insertion loss as it changes from SSBW to love mode. When a film material is deposited on the surface it should load the substrate which means the speed of propagation in the film is less than in the substrate. In this case the mode of propagation changes to Love mode. When metal oxides films are deposited on the substrate the insertion loss is decreased as the mode of operation changes from SSBW to Love mode.
- SSBW Surface Skimming Bulk Wave
- Suitable substrates are the substrates that allow the generation of leaky SAWs. These include LST quartz, 64 YX- LiNbO 3 , 41 YX- UNbO 3 and 36 YX- LiTaO3 substrates. Other substrates cuts, which allow propagation of Rayleigh or other type of waves, can be used for gas sensing applications. Again addition of an acoustic confining layer increases sensitivity of the device.
- Substrates that we have employed and tested are: ST cut quartz, XY and Yz UNBO 3 , 128 X LiNbO 3 , 1 10 Bismuth germanium oxide, different cuts of LiTaO 3 , GaAs, langatite and langasite.
- Second layers are used: metal compounds, metal oxides, metal nitrides, binary compounds, polymers, nano-particle compounds and amorphous materials.
- One of the simplest, most economic and most reliable methods of operating a SAW device is to place it in a feedback-loop. Implementing this, the system oscillates at a frequency, which is a function of the width of the finger pairs of the SAW device pattern and the speed of propagation of the delay line. A change in the operational frequency of the system is resulted from the change in the acoustic wave propagation speed which itself is changed via the interaction with an analyte.
- a biologically sensitive layer is deposited on the second piezo layer of the second SAW device to interact with the appropriate biochemical components to be detected.
- a gold film may be deposited on the surface. Gold interacts with high affinity to proteins. It can be used with specific antibodies for antigen detection. This deposit can be made on a porous surface as well as a smooth surface.
- a simple SAW oscillator may contain and amplifier, a SAW device, an output coupler and a means of setting loop phase shift for instance via a length of a coax cable. The saturation of the loop amplifier provides the gain compression.
- a very important aspect in the design and implementation of a SAW sensing system, which operates based on an oscillator, is the stability of the frequency.
- Different types of phenomenon may cause a frequency deviations from the base frequency in a sensing system. They can be categorized as follow: 1- Random deviations generated by random noise 2- Drift as a constant frequency shift. This can be a short term or a long term drift 3- Electromagnetic effects. Although shielding dramatically reduces this effect but affinity of any metal or material with high permittivity to the system may generate a frequency change 4- Noise due to the mechanical component of the system such as pumps and injection of the analyte 5- Frequency changes caused by warming up of the electronic circuits and random noise generated in them The frequency stability for a SAW oscillation system is divided into systematic and random categories: 1. Systematic are the predictable effects 2.
- Random effects are different regarding prediction and spectral densities than systematic effects Random noises are generally difficult to quantify, as they are not a state of frequency which is changing at a specific time period. Furthermore, random noise value strongly depends on the number of samples and the total length of measurement. For the study of random noise, the spectra of the frequency are normally the most common parameters to inspect, Among random noises, the parameter which has the most important effect on oscillation frequency, is the change in temperature. It has effect both on the SAW device and on the electronic components of the loop's amplifier.
- the characteristics of the temperature coefficient of frequency is largely dependant on the cut of the crystal. Generally, the frequency change generated by the temperature change can be dramatically suppressed by employing a dual delay line device and looking at the difference of the two oscillations.
- Figure 1 is a cross section of a saw sensor to which the invention is applicable;
- Figure 2 is a schematic illustration of a preferred sensor and analyser of this invention
- FIG. 3 illustrates the frequency shift performance of the invention
- Figure 4 illustrates the random noise of a SAW device of the invention
- Figure 5 illustrates the band width reduction achieved by the present invention
- Figure 6 illustrates the response of the sensor of this invention to hydrogen gas
- Figure 7 illustrates the response of the sensor of this invention to carbon monoxide gas
- Figure 8 illustrates the response of the sensor of this invention to nitrogen dioxide gas
- Figure 9 illustrates the response of the sensor of this invention to biochemicals in a liquid
- Figure 10 illustrates the effect of ZnO SiO 2 layers on frequency shift
- Figure 11 illustrates the mass sensitivity of layered SAW devices based on 36
- LiTaO 3 and 64 LiNbO 3 with ZnO guiding layers
- Figure 12 illustrates the effect of conductivity change vs layer thickness.
- the Substrate's cut belongs to a class of crystal cuts that support Surface Skimming Bulk Wave (SSBW) and leaky wave for liquid sensing applications and other cuts for gas sensing applications.
- the layers are of different of piezoelectric materials that can be deposited as a highly directional film on the substrate, which let acoustic waves propagate onto its environment. Speed of propagation of acoustic wave in the layers must be less than the substrate to support Love mode of propagation, otherwise it allows other modes of propagation as well.
- a first wave generating transducer 3 and a first receiving transducer 4 are fabricated onto the surface of a piezoelectric substrate 1.
- the transducers 3 and 4 are any suitable interdigital transducer used in SAW devices.
- the wave transmitting layer 5, a piezoelectric layer, is fabricated onto the substrate 1 such that the transducers 3 and 4 lie between the substrate 1 and the layer 5.
- a sensing layer 6 is deposited on to the wave propagation layer 5 to form a surface which is physically, chemically or biologically active, selectively to agents in the liquid or gaseous media to which the surface 6 is exposed.
- the surface may be treated to detect any biological target .
- the surface can be treated to detect quantitatively the presence of Salmonella, E Coli, or other enteric pathogens.
- pathogens such as legionella can be detected.
- the transitional layer 9 is preferably an acoustically sensitive layer such as SiO 2 which increases the velocity shift and as a result increases the electromechanical coupling factor.
- the transition layer 9 lies between the wave transmitting layer 5 and the substrate 1 so that the distance between the first IDT and layer 5 is increased to facilitate a higher coupling coefficient and reduce the acoustic wave transmission energy loss which otherwise occur.
- the protective layer 10 lies between the sensing layer 6 and the piezo layer 5 to protect layer 5 from damage.
- the protective layer 10 may be SiO 2 , other metal oxides, metal compounds or polymers.
- the SAW device of this invention is shown in a detector device.
- second wave generating transducer 7 and a second receiving transducer 8 above the substrate layer and below the wave transmitting layer and near the first generating transducers 3 and receiving transducers 4. Both sets of transducers are located on the same substrate. No sensing layer is located above the second set of transducers 7 and 8 so that they can function as a reference sensor.
- a frequency counter 11 determines frequency of the output signals and a computing device 12 calculates the concentration of the detectable components in the liquid or gaseous media.
- the output from the first receiver transducer 4 contains the sensing signal which is a consequence of the interaction between the sensing layer and the target molecules.
- the output from the second receiving transducer 8 contains only the operational characteristics of the sensing device because thee is no sensing layer 6 above it. This enables the analyser to compute accurately a signal indicative of the concentration of the target molecule.
- the spectral density of frequency fluctuations S(f) is the magnitude of the mean square frequency fluctuation in a 1 Hz bandwidth .
- Another parameter used for quantifying random-frequency fluctuations is Allan variance. Allan parameter is the average value of one half of the square of the fractional change in frequency between two adjacent frequency measurements.
- STW devices are fabricated on to a crystal cut that allows the propagation of surface transverse wave (STW) (Leaky SAW and SSBW are in STW family).
- STW devices have: • Low device loss • High intrinsic Q • Low 1/f noise and • low vibration sensitivity
- STW based resonators are widely used in modern communication and wireless remote sensing, weapon guiding systems.
- By the deposition of a guiding film a layered SAW device is fabricated.
- the way to move to fabrication of a stable sensor is to design a high Q SH resonator.
- the SH-type acoustic waves are excited by means of IDTs in a direction perpendicular to X-axis on selected temperature compensated rotated Y- orientation on the piezoelectric substrate. If IDTs are separated by a free surface from each other then SH-wave is a SSBW (surface skimming bulk wave) or leaky wave. For these modes of propagations the power is radiate into the bulk of the crystal, which increases the insertion loss. If a metal strip grating with a period equal to that of the IDTs is depostited between IDTs it slows down the SSBW and leaky waves and changed them to STW. The wave energy is confined onto the surface and does not dissipate into the bulk of the device. In this invention the grating may be patterned either in between the guiding layers or on the surface of the SAW sensors. In both cases the insertion losses are decreased more than 15 dB.
- the guiding layers can be piezoelectric materials such as ZnO or non-piezoelectric materials such as SiO 2 and Si 3 N .
- Adding Reflectors reduces the bandwidth in a SAW device. This will increase the Q of the device, which has a dramatic effect on the signal to noise ratio of the operating system. Adding reflectors decreases the bandwidth of the device. Adding more than 50 reflectors for SAW devices based on LiTaO3 and LiNbO3 substrates have increased the Q of the devices up to one order of magnitude. For ST-cut quartz based devices, more than 150 reflectors are required but it increases the Q of the device up to 15 times. 4. Changing the Q of the device by changing the cavity length
- Cavity length increases the Q of the device.
- the delay line should have a long delay time as possible.
- the combined length of the two transducers should be approximately no less than 90 percent of the centre-to-centre distance of the two transducers.
- the number of fingers in each transducers may be limited to approximately 120. Additional fingers can be used to achieve lower insertion loss, but this increases the undesirable influence of metal on turnover temperature and triple transit reflections.
- a number of factors, such as propagation loss, physical size and phase error between groups of fingers contribute to limiting the length of the SAW transducer. At 400 MHz and achievable delay time for a single-mode delay line is about 4 ⁇ seconds. Another advantage of large cavity size is that it increases the power handling capability of the resonator.
- the reference and sensor are better to be run by dependant amplifiers.
- the inventors have used arrays of transistors to reduce the effect of temperature on the gain of the transistors and the environmental noise. When transistors are fabricated onto the same substrates then they show the same change in their gain, specially as temperature drifts.
- the SAW device has by far the largest delay time of all oscillator components the other components play a significant role in the frequency stability of the oscillator.
- SAW devices In comparison to BAW resonators, SAW devices have one or two order of magnitude lower Q, as a result the influence of frequency stability of electronics is greater. To reduce the effect of stability of loop amplifier should have a large bandwidth. Employment of a negative feedback may help. It is also convenient to use a 50 ohm environment.
- Aperture size has an important role when the sensor is operating in contact with a liquid.
- a typical delay line, in air, will have an insertion loss of approximately 20 dB if 120 fingers are used in each transducers and the acoustic aperture is approximately 200 wavelengths.
- Grooved gratings usually give better frequency stability than metal grating since the only metal in the active acoustic area comes from the transducers. Despite such an advantage a larger cost may reduce the attractiveness of this method.
- the vibration sensitivity is strongly dependant on the details of how the SAW device is mounted and packaged. Although normally the magnitude of vibration is small compared to temperature effects and long term drifts. Change in pressure of the liquid cell has a significant effect on the device. Even the pressure can be changed by small drops of liquid trickling from the outlet of a liquid delivery system.
- FIG. 3 shows the warming up of a SAW sensing system with and without applying the enhancement of the invention. Random noise is less and drift is smaller. System reaches a stable condition in a shorter time.
- Figure 4 shows the random noise of the enhanced system of this invention.
- Figure 5 illustrates the reduction of the bandwidth of a SAW device before and after introducing the changes.
- Figure 5A shows the insertion loss of a SAW device before introducing the enhancements.
- Figure 5 B shows the insertion loss of a
- Bandwidth is at least 10 times smaller.
- Figure 6 illustrates the response of the layered SAW sensor (Structure : LiTaO 3 / ZnO / WO 3 / Au) to hydrogen gas.
- Figure 7 illustrates the response of the layered SAW sensor (Structure : LiTaO 3 /
- Figure 8 illustrates the response of the layered SAW sensor (Structure : LiNbO 3 /
- Figure 9 illustrates the response of the sensor of this invention to biochemicals in a liquid.
- the system shows a freq response linear to mass addition of the analyte in the solution for masses less than 500ng for IgNAR. 100ng, 200ng, 200ng and 500 ng of IgNAR has been introduced to the cell and then thoroughly washed. Comparative examples
- the frequency shift for a 1.5 ⁇ m ZnO/36 LiTaO 3 device is approximately 3MHz but for a 3 ⁇ m SiO 2 devices is approximately 1.2MHz.
- the frequency shift for a 1.5 ⁇ m SiO 2 device is approximately 900kHz
- the ZnO/36 LiTaO 3 device is between 2.5 to 6 times more mass sensitive than SiO 2 /36 LiTaO 3 device depending on the layer thickness and the type of mass added.
- the thickness for obtaining the optimum mass sensitivity for 64° LiNbO 3 is less than 36°LiTaO 3 .
- the 64° UNbO 3 is about 2.5 times more mass sensitive.
- 1 - ZnO layer is smaller 2- Mass sensitivity is larger 3- It can be fabricated on a smaller wafer area as the piezoelectric constant coefficient is larger and makes the structure smaller
- the temperature coefficient of frequency is larger for LiNbO 3 .
- the ZnO layer on both sides has to have the exact thickness to eliminate the effect of temperature change
- the effect of conductivity change vs. the thickness of layer is shown in Figure 12
- Substrate 36 LiTaO 3 and layer is ZnO.
- WO 3 has been used as the selective layer to H 2 gas. 0.5% and 1% H 2 gas in air has been used in the measurements.
- the device structure is ZnO/36 LiTaO 3 .
- the operational frequency is approximately 200MHz.
- Figure 12 shows that the thickness of the layer has a significant effect on the conductivity and charge response of the device.
- this example is for gas sensing, the results are also applicable for the surface conductivity change which may occur in bio-sensing applications. The response in a bio-sensing situation will be some unknown combination of mass and conductivity contributions.
Landscapes
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Acoustics & Sound (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2005217460A AU2005217460B2 (en) | 2004-02-26 | 2005-02-25 | Layered surface acoustic wave sensor |
JP2007500004A JP2007524853A (en) | 2004-02-26 | 2005-02-25 | Layered surface acoustic wave sensor |
EP05706280A EP1719247A4 (en) | 2004-02-26 | 2005-02-25 | Layered surface acoustic wave sensor |
US10/590,367 US7482732B2 (en) | 2004-02-26 | 2005-02-25 | Layered surface acoustic wave sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2004900942 | 2004-02-26 | ||
AU2004900942A AU2004900942A0 (en) | 2004-02-26 | Layered Surface Acoustic Wave Sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005083882A1 true WO2005083882A1 (en) | 2005-09-09 |
Family
ID=34891632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/AU2005/000244 WO2005083882A1 (en) | 2004-02-26 | 2005-02-25 | Layered surface acoustic wave sensor |
Country Status (4)
Country | Link |
---|---|
US (1) | US7482732B2 (en) |
EP (1) | EP1719247A4 (en) |
JP (1) | JP2007524853A (en) |
WO (1) | WO2005083882A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008019694A2 (en) * | 2006-08-17 | 2008-02-21 | Atonomics A/S | Bio surface acoustic wave (saw) resonator design for detection of a target analyte |
WO2008019693A2 (en) * | 2006-08-17 | 2008-02-21 | Atonomics A/S | Bio surface acoustic wave (saw) resonator amplification for detection of a target analyte |
GB2470280A (en) * | 2009-05-13 | 2010-11-17 | Nat Univ Tsing Hua | Gas sensing device using array of surface acoustic wave devices |
US11056533B1 (en) | 2020-02-28 | 2021-07-06 | Globalfoundries U.S. Inc. | Bipolar junction transistor device with piezoelectric material positioned adjacent thereto |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0317727D0 (en) * | 2003-07-29 | 2003-09-03 | Univ Warwick | Liquid viscosity sensor |
JP2008067289A (en) * | 2006-09-11 | 2008-03-21 | Fujitsu Media Device Kk | Surface acoustic wave device and filter |
JP4943787B2 (en) * | 2006-09-13 | 2012-05-30 | 太陽誘電株式会社 | Elastic wave device, resonator and filter |
KR100889044B1 (en) * | 2007-08-09 | 2009-03-19 | 주식회사 엠디티 | SAW sensor |
KR101468593B1 (en) * | 2008-08-14 | 2014-12-04 | 삼성전자주식회사 | Wave sensor apparatus comprising gas removing unit and method of detecting target material in liquid sample |
JP2010066194A (en) * | 2008-09-12 | 2010-03-25 | River Eletec Kk | Dissolved hydrogen sensor |
WO2010150587A1 (en) * | 2009-06-25 | 2010-12-29 | 株式会社 村田製作所 | Elastic surface wave sensor |
US20100331733A1 (en) * | 2009-06-30 | 2010-12-30 | Orthosensor | Sensing device and method for an orthopedic joint |
US9329154B1 (en) * | 2011-10-06 | 2016-05-03 | Sandia Corporation | Devices and methods to detect and quantify trace gases |
US20130201316A1 (en) | 2012-01-09 | 2013-08-08 | May Patents Ltd. | System and method for server based control |
US10228350B2 (en) * | 2014-02-03 | 2019-03-12 | Kyocera Corporation | Sensor apparatus |
US20160109322A1 (en) * | 2014-10-20 | 2016-04-21 | HGST Netherlands B.V. | Leak detection using acoustic wave transducer |
WO2019010356A1 (en) * | 2017-07-07 | 2019-01-10 | Aviana Molecular Technologies, Llc | Multiplexing surface acoustic wave sensors with delay line coding |
CN111149141A (en) | 2017-09-04 | 2020-05-12 | Nng软件开发和商业有限责任公司 | Method and apparatus for collecting and using sensor data from a vehicle |
GB201720276D0 (en) * | 2017-12-05 | 2018-01-17 | Parker Hunnifin Emea S A R L | Detecting particles in a particle containing fluid |
KR102079659B1 (en) * | 2018-04-05 | 2020-02-20 | 해성디에스 주식회사 | Optical sensor device and Package including the same |
WO2021041359A1 (en) * | 2019-08-30 | 2021-03-04 | Parker-Hannifin Corporation | Surface acoustic wave sensor for refrigerant leakage detection |
DE102022126980B3 (en) | 2022-10-14 | 2024-03-21 | Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW Dresden e.V.) | Method and device for determining properties of electrically conductive or dielectric layers in layer systems |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5012668A (en) * | 1989-08-22 | 1991-05-07 | The Boeing Company | Inclined electrode surface acoustic wave substance sensor |
US5283037A (en) * | 1988-09-29 | 1994-02-01 | Hewlett-Packard Company | Chemical sensor utilizing a surface transverse wave device |
JPH0993079A (en) * | 1995-09-26 | 1997-04-04 | Matsushita Electric Ind Co Ltd | Multiplex surface acoustic wave mode filter |
US5817922A (en) * | 1994-05-17 | 1998-10-06 | Forschungszenlram Karlsruhe Gmbh | Gas sensor consisting of surface wave components |
JP2000261276A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave filter |
US6122954A (en) * | 1996-07-11 | 2000-09-26 | Femtometrics, Inc. | High sensitivity instrument to measure NVR in fluid |
JP2000312126A (en) * | 1999-04-28 | 2000-11-07 | Kyocera Corp | Surface acoustic wave unit |
US6480076B2 (en) * | 2000-12-21 | 2002-11-12 | Trw Inc. | Recessed reflector single phase unidirectional transducer |
WO2002095940A1 (en) * | 2001-05-21 | 2002-11-28 | Microtechnology Centre Management Limited | Surface acoustic wave sensor |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2266395B1 (en) * | 1974-03-26 | 1980-10-31 | Thomson Csf | |
US3979697A (en) * | 1975-11-03 | 1976-09-07 | International Telephone And Telegraph Corporation | Frequency modulated saw oscillator |
US4107626A (en) * | 1976-12-20 | 1978-08-15 | Gould Inc. | Digital output force sensor using surface acoustic waves |
US4361026A (en) * | 1980-06-24 | 1982-11-30 | Muller Richard S | Method and apparatus for sensing fluids using surface acoustic waves |
JPS60124109A (en) * | 1983-12-09 | 1985-07-03 | Clarion Co Ltd | Surface elastic wave element |
US5117146A (en) * | 1988-04-29 | 1992-05-26 | The United States Of America As Represented By The United States Department Of Energy | Acoustic wave device using plate modes with surface-parallel displacement |
US5130257A (en) * | 1988-09-29 | 1992-07-14 | Hewlett-Packard Company | Chemical sensor utilizing a surface transverse wave device |
US4868524A (en) * | 1988-10-20 | 1989-09-19 | The Johns Hopkins University | RF circuit utilizing a voltage controlled saw oscillator |
US5126694A (en) * | 1991-07-11 | 1992-06-30 | Raytheon Company | Phase locked oscillator |
US5216312A (en) * | 1992-02-28 | 1993-06-01 | Hewlett-Packard Company | Fluid sensing device having reduced attenuation of shear transverse waves |
US5321331A (en) * | 1992-03-13 | 1994-06-14 | Hewlett-Packard Company | Double-sided fluid sensor for reduced attenuation of shear transverse waves |
US5705399A (en) * | 1994-05-20 | 1998-01-06 | The Cooper Union For Advancement Of Science And Art | Sensor and method for detecting predetermined chemical species in solution |
JP3388060B2 (en) * | 1994-11-25 | 2003-03-17 | 日本碍子株式会社 | Fluid characteristic measuring element and fluid characteristic measuring device |
JPH11205071A (en) * | 1998-01-13 | 1999-07-30 | Murata Mfg Co Ltd | Surface acoustic wave device |
US6378370B1 (en) * | 2000-03-08 | 2002-04-30 | Sensor Research & Development Corp. | Temperature compensated surface-launched acoustic wave sensor |
JP3402311B2 (en) * | 2000-05-19 | 2003-05-06 | 株式会社村田製作所 | Surface acoustic wave device |
US6848295B2 (en) * | 2002-04-17 | 2005-02-01 | Wayne State University | Acoustic wave sensor apparatus, method and system using wide bandgap materials |
US6621192B2 (en) * | 2000-07-13 | 2003-09-16 | Rutgers, The State University Of New Jersey | Integrated tunable surface acoustic wave technology and sensors provided thereby |
US7002281B2 (en) * | 2003-07-16 | 2006-02-21 | Biode Inc. | Multi-reflective acoustic wave device |
US7392706B2 (en) * | 2003-11-27 | 2008-07-01 | Kyocera Corporation | Pressure sensor device |
US7205701B2 (en) * | 2004-09-03 | 2007-04-17 | Honeywell International Inc. | Passive wireless acoustic wave chemical sensor |
-
2005
- 2005-02-25 WO PCT/AU2005/000244 patent/WO2005083882A1/en active Application Filing
- 2005-02-25 JP JP2007500004A patent/JP2007524853A/en active Pending
- 2005-02-25 US US10/590,367 patent/US7482732B2/en not_active Expired - Fee Related
- 2005-02-25 EP EP05706280A patent/EP1719247A4/en not_active Withdrawn
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5283037A (en) * | 1988-09-29 | 1994-02-01 | Hewlett-Packard Company | Chemical sensor utilizing a surface transverse wave device |
US5012668A (en) * | 1989-08-22 | 1991-05-07 | The Boeing Company | Inclined electrode surface acoustic wave substance sensor |
US5817922A (en) * | 1994-05-17 | 1998-10-06 | Forschungszenlram Karlsruhe Gmbh | Gas sensor consisting of surface wave components |
JPH0993079A (en) * | 1995-09-26 | 1997-04-04 | Matsushita Electric Ind Co Ltd | Multiplex surface acoustic wave mode filter |
US6122954A (en) * | 1996-07-11 | 2000-09-26 | Femtometrics, Inc. | High sensitivity instrument to measure NVR in fluid |
JP2000261276A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave filter |
JP2000312126A (en) * | 1999-04-28 | 2000-11-07 | Kyocera Corp | Surface acoustic wave unit |
US6480076B2 (en) * | 2000-12-21 | 2002-11-12 | Trw Inc. | Recessed reflector single phase unidirectional transducer |
WO2002095940A1 (en) * | 2001-05-21 | 2002-11-28 | Microtechnology Centre Management Limited | Surface acoustic wave sensor |
Non-Patent Citations (3)
Title |
---|
"Sensors-october 2000-Acoustic Wave Technology Sensors.", INTERNET CITATION, October 2000 (2000-10-01), XP008110872, Retrieved from the Internet <URL:URL:www.sensorsmag.com/articles/1000/68/main.stml> [retrieved on 20020619] * |
PATENT ABSTRACTS OF JAPAN * |
See also references of EP1719247A4 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008019694A2 (en) * | 2006-08-17 | 2008-02-21 | Atonomics A/S | Bio surface acoustic wave (saw) resonator design for detection of a target analyte |
WO2008019693A2 (en) * | 2006-08-17 | 2008-02-21 | Atonomics A/S | Bio surface acoustic wave (saw) resonator amplification for detection of a target analyte |
WO2008019693A3 (en) * | 2006-08-17 | 2008-04-03 | Atonomics As | Bio surface acoustic wave (saw) resonator amplification for detection of a target analyte |
WO2008019694A3 (en) * | 2006-08-17 | 2008-04-10 | Atonomics As | Bio surface acoustic wave (saw) resonator design for detection of a target analyte |
GB2470280A (en) * | 2009-05-13 | 2010-11-17 | Nat Univ Tsing Hua | Gas sensing device using array of surface acoustic wave devices |
US11056533B1 (en) | 2020-02-28 | 2021-07-06 | Globalfoundries U.S. Inc. | Bipolar junction transistor device with piezoelectric material positioned adjacent thereto |
Also Published As
Publication number | Publication date |
---|---|
JP2007524853A (en) | 2007-08-30 |
EP1719247A4 (en) | 2011-03-23 |
EP1719247A1 (en) | 2006-11-08 |
US7482732B2 (en) | 2009-01-27 |
US20070241637A1 (en) | 2007-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7482732B2 (en) | Layered surface acoustic wave sensor | |
US7287431B2 (en) | Wireless oil filter sensor | |
Benes et al. | Comparison between BAW and SAW sensor principles | |
KR20080031014A (en) | Passive acoustic wave sensor system | |
KR101149297B1 (en) | Dual mode acoustic wave sensor, fabrication method thereof and biosensor system using the same | |
Zhang et al. | The Bleustein–Gulyaev wave for liquid sensing applications | |
JP5170311B2 (en) | Surface acoustic wave sensor | |
Kalantar-Zadeh et al. | Comparison of layered based SAW sensors | |
Zimmermann et al. | Love-waves to improve chemical sensors sensitivity: theoretical and experimental comparison of acoustic modes | |
Kalantar-Zadeh et al. | A novel Love mode SAW sensor with ZnO layer operating in gas and liquid media | |
AU2005217460B2 (en) | Layered surface acoustic wave sensor | |
Nakamura | Shear-horizontal piezoelectric surface acoustic waves | |
Kakio et al. | Shear-horizontal-type surface acoustic waves on quartz with Ta2O5 thin film | |
Da Cunha et al. | LGX pure shear horizontal SAW for liquid sensor applications | |
Hou et al. | Mass sensitivity of plate modes in surface acoustic wave devices and their potential as chemical sensors | |
Kalantar-Zadeh et al. | A novel love mode device with nanocrystalline ZnO film for gas sensing applications | |
Becker et al. | Multistrip couplers for surface acoustic wave sensor application | |
RU2533692C1 (en) | Multiplexer acoustic array for "electronic nose" and "electronic tongue" analytical instruments | |
Kakio et al. | High coupling and highly stable shear-horizontal-type surface acoustic wave on langasite with Au or Ta2O5 thin film | |
Seidel et al. | Multimode and multifrequency gigahertz surface acoustic wave sensors | |
Seidel et al. | Multi-frequency and multi-mode GHz surface acoustic wave sensor | |
Zhang et al. | Development of interdigitated acoustic wave transducers for biosensor applications | |
Avramov | Design of Rayleigh SAW resonators for applications as gas sensors in highly reactive chemical environments | |
Ota et al. | Study on 36YX-LiTaO 3/36Y90X-Quartz Structure for SH-SAWsensor Application | |
Iancu et al. | Characterization of chemical microsensors in SAW systems |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005706280 Country of ref document: EP Ref document number: 2007500004 Country of ref document: JP Ref document number: 200580005823.2 Country of ref document: CN Ref document number: 2005217460 Country of ref document: AU |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2443/KOLNP/2006 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10590367 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2005217460 Country of ref document: AU Date of ref document: 20050225 Kind code of ref document: A |
|
WWP | Wipo information: published in national office |
Ref document number: 2005217460 Country of ref document: AU |
|
WWP | Wipo information: published in national office |
Ref document number: 2005706280 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 10590367 Country of ref document: US |