WO2005079293A2 - Integrated iii-nitride power devices - Google Patents

Integrated iii-nitride power devices Download PDF

Info

Publication number
WO2005079293A2
WO2005079293A2 PCT/US2005/004388 US2005004388W WO2005079293A2 WO 2005079293 A2 WO2005079293 A2 WO 2005079293A2 US 2005004388 W US2005004388 W US 2005004388W WO 2005079293 A2 WO2005079293 A2 WO 2005079293A2
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
integrated device
devices
integrated
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/004388
Other languages
French (fr)
Other versions
WO2005079293A3 (en
Inventor
Daniel M. Kinzer
Robert Beach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to JP2006553268A priority Critical patent/JP2007522677A/en
Priority to DE112005000352T priority patent/DE112005000352T5/en
Publication of WO2005079293A2 publication Critical patent/WO2005079293A2/en
Publication of WO2005079293A3 publication Critical patent/WO2005079293A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to power semiconductor devices and more particularly to integrated power semiconductor devices.
  • a known, discrete high electron mobility transistor may include drain pad 10, source pad 12, and gate pad 14. Drain pad 10 is electrically connected to a plurality of drain runners 16, and source pad 12 is electrically connected to a plurality of source runners 18. Usually, drain pad 10 and source pad 12, and runners 16, 18 are arranged parallel to one another. In addition, in one conventional arrangement, drain runners 16 and source runners 18 are alternated in order to distribute current evenly through drain pad 10 and source pad 12. In a device according to Figure 1A, the area between each two opposing runners 16, 18 is an active area.
  • FIG. IB a portion A of an active area of the device of Figure 1A is enlarged to illustrate a plurality of drain fingers 20 that are electrically connected and extend away from each drain pad 10, and a plurality of source fingers 22 that are electrically connected to and extend away from each source pad 12.
  • drain fingers 20 and source fingers 22 alternate along drain pad 16 and source pad 18, whereby an interdigitated configuration is attained.
  • Gate electrode 24 meanders through the space between drain pad 16, drain fingers 20, source pad 18, and source fingers 22, and, although not shown, is connected to a gate runner which electrically connects gate electrode 24 to gate pad 14.
  • a typical HEMT includes substrate 25, which may be formed from GaN, Si, SiC, or Sapphire, first semiconductor body 26 formed from one ⁇ i-nitride semiconductor such as GaN and disposed over substrate 25, and a second semiconductor body 28 formed of another HI- nitride semiconductor of a different band gap such as AlGaN disposed over first semiconductor body 26.
  • First semiconductor body 26 and second semiconductor body 28 form heterojunction 30, which due to piezoelectric polarization forms a two dimensional electronic gas (2DEG) at or near heterojunction 30.
  • the 2DEG so formed is highly conductive and serves as a channel for conducting current between a source finger 20 and a drain finger 22. It should be noted that in a typical device source fingers 22 and drain fingers 20 are connected to second semiconductor body 28 by a highly conductive ohmic contact layer 32.
  • gate electrode 24 is insulated form second semiconductor body 28 by gate insulation layer 34.
  • gate electrode 24 can make a schottky contact with second semiconductor body 28, as seen, for example, in Figure ID.
  • the devices illustrated by Figure 1 C and Figure ID are depletion mode devices, meaning that the device is nominally on and the activation of gate electrode 24 in each device by application of an appropriate voltage interrupts the 2DEG to turn the device off. Enhancement mode HEMTs are shown in U.S. Provisional Application Serial No. 60/544,626, filed February 12, 2004, the disclosure of which is incorporated herein by reference and U.S. patent application entitled El-Nitride Bidirectional Switch, filed in the name of Daniel M.
  • Bidirectional devices can include one gate electrode, or two gate electrodes.
  • Figure IE illustrates a bidirectional discrete device which includes two gate electrodes.
  • the prior art devices described with reference to Figures 1A-1E are discrete devices, meaning that each of these devices occupies a single, discrete semiconductor die. Due to the high breakdown voltage and current carrying capabilities El-nitride power devices occupy only a small area on a die. Thus, IE-nitride-based semiconductor power devices are very small compared to silicon-based devices.
  • El-nitride semiconductor power devices need to be packaged so that they may be used in an electronic application, such as a power supply application, or motor control application.
  • the packaging elements are thought to contribute the most to the overall size of the package due to the small size of the El-nitride power devices. Because many power applications require more than one power semiconductor device, it is expected that packaging, not the die, will contribute the most to the amount of space that is occupied by IE-nitride-based power semiconductor packages.
  • an integrated device includes two or more El-nitride power semiconductor devices which are formed in a single common semiconductor die.
  • an integrated device according to the present invention can be packaged in a common package, which results in space saving among other advantages.
  • a device according to the first embodiment of the present invention is an integrated device that includes two El-nitride-based power devices connected in a half-bridge configuration.
  • a device is an integrated device that includes six IE-nitride-based power devices connected to form three half-bridges for use in, for example, a three phase power application.
  • a device according to the third embodiment of the present invention is an integrated device that includes four El-nitride-based power devices connected in a H-bridge configuration.
  • a device is an integrated device which includes two IE-nitride based bidirectional devices connected to form a half-bridge and two IE-nitride based devices having a common drain for use in, for example, boost converter applications.
  • a device is an integrated device which include four El-nitride based schottky diodes in a full bridge configuration.
  • Figure 1 A is a top plan view of a discrete IE-nitride power device according to the prior art.
  • Figure IB is an enlarged view of portion A of an active area of the device shown in Figure 1 A.
  • Figure 1C is a cross-sectional view of an example of a device according to the prior art taken along line B-B in Figure IB viewed in the direction of the arrows.
  • Figure ID is a cross-sectional view of another example of a device according to the prior art taken along line B-B in Figure IB viewed in the direction of the arrows.
  • Figure IE shows a top plan view of a bidirectional IE-nitride device which includes two gate electrodes.
  • Figure 2 is a top plan view of an integrated half-bridge device according to the first embodiment of the present invention.
  • Figure 3 is a top plan view of an integrated three-phase device according to the second embodiment of the present invention.
  • Figure 4 is a top plan view of an integrated H-bridge device according to the third embodiment of the present invention.
  • Figure 5 is a top plan view of an integrated device according to the fourth embodiment of the present invention, which includes two El-nitride based bidirectional devices connected to form a half-bridge and two IE-nitride based devices having a common drain.
  • Figure 6A shows a top plan view of a IE-nitride schottky device according to prior art.
  • Figure 6B shows a cross-sectional view of a schottky device according to the prior art taken along line 6B-6B in Figure 6A and viewed in the direction of the arrows.
  • Figure 7 shows a top plan view of an integrated IE-nitride based schottky bridge according to the fifth embodiment of the present invention.
  • Figures 8A-8C illustrate integrated devices according to the present invention each with a feature for attaining electrical isolation between the two devices.
  • an integrated device includes two HEMTs formed on one die and interconnected to form a half-bridge.
  • the term integrated as used herein means that the devices are formed in a common die.
  • an integrated device according to the first embodiment includes a high side HEMT 36, which includes drain pad 10, and gate pad 14, and a low side HEMT 38, which includes source pad 12 and gate pad 14.
  • high side HEMT 36 and low side HEMT 38 are formed in a single die.
  • a device according to the first embodiment can be packaged together, thereby saving space in a power application.
  • the drain pad of low side HEMT 38 and the source pad of high side HEMT 36 are combined into a single pad, switched node pad 40, which serves as the output pad for the half- bridge.
  • an integrated device may include three half-bridges formed in a single die.
  • drain pads 10 of high side HEMTs 36 are interconnected to form a single pad, bus pad 42
  • source pads 12 of low side HEMTs 38 are interconnected to form a single pad, ground pad 44, for the three phase bridge according to the second embodiment of the present invention.
  • an integrated device according to the third embodiment includes four HEMTs formed in a single die and integrated into an H bridge configuration. In this embodiment drain pads 10 of high side HEMTs 36 are connected to one another to form bus pad 42, source pads 12 of low side HEMTs are connected together to form ground pad 44.
  • the source pad of one high side HEMT 36 is common with the drain pad of one low side HEMT 38 to form a first output pad 40A, and the source pad of the other high side HEMT 36 is common with the drain pad of the other low side HEMT 38 to form second output pad 40B.
  • an integrated device may include two bidirectional HEMTs integrated in a half-bridge configuration. That is, one bidirectional HEMT is a high side device 46 and the other is low side device 48. It should be noted that each bidirectional HEMT in the fourth embodiment includes two gate pads 14A, 14B. Also, it should be noted that due to bidirectionality, HEMTs 36, 38 in the fourth embodiment only include power pads 50, rather than source pads and drain pads. As seen in Figure 5, one power pad 52 is common to both bidirectional HEMTs, and serves as the switched output pad 40.
  • a device according to the fourth embodiment includes first HEMT 54 and second HEMT 56 integrated to have a common drain pad 58.
  • a device can be formed which is the integration of two integrated devices.
  • a device according to the fourth embodiment can be used to form a bridgeless boost converter.
  • IE-nitride semiconductor systems can also be used for forming diodes, such as schottky diodes.
  • a schottky diode 60 in IE-nitride system does not include a gate, but rather includes anode electrode 62, which makes a schottky contact with second semiconductor body 28, and cathode electrode 64 which makes an ohmic contact with second semiconductor body 28. It should be noted that similar to a HEMT, anode electrodes 62, and cathode electrodes 64 are connected to respective runners 66 which are in turn electrically connected to anode pad 68 and cathode pad 70.
  • an integrated device is a schottky bridge that includes four IE-nitride schottky diodes that are arranged in a full-bridge configuration. Specifically, anode pads of the first two schottky devices are integrated to form a common anode pad 61, cathode pads of the second two schottky devices are integrated to form a common cathode pad 63, and the cathode pad of each of the first two schottky devices is integrated with the anode pad of one of the other two second schottky devices to form a third common pad 65, and a fourth common pad 67, whereby a schottky bridge is realized.
  • second semiconductor body 28 may be removed to interrupt the 2DEG whenever desired in order to achieve electrical isolation.
  • a recess 104 can be formed in second semiconductor body 28 to a depth that will cause an interruption in the 2DEG and thus electrically isolates the two devices as illustrated in Figure 8 A.
  • Recess 104 can be extended through second semiconductor body 28 to first semiconductor body 26 as illustrated in Figure 8B.
  • second semiconductor layer 28 may include an implanted region 106 that includes crystal damage to first and second semiconductor bodies 26, 28 which causes an interruption in the 2DEG at selected locations between devices 100, 102 to attain electrical isolation between the same. Once an isolated portion of the 2DEG is interrupted, the high resistivity of the first semiconductor body 26 can be relied on for isolation. Thus, two or more devices may be formed on a single die.
  • an HEMT or a schottky device as described herein as prior art is preferred as a building block for an integrated device according to the present invention. However, it should be understood that the present invention is not limited to the configurations disclosed herein.

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.

Description

INTEGRATED -NITRIDE POWER DEVICES
RELATED APPLICATION
[0001] The present application is based on and claims benefit of U.S. Provisional Application No. 60/544,626 filed February 12, 2004, entitled UI- NITRIDE BIDIRECTIONAL SWITCH, to which a claim of priority is hereby made and the disclosure of which is hereby incorporated by this reference.
FIELD OF THE INVENTION
[0002] The present invention relates to power semiconductor devices and more particularly to integrated power semiconductor devices.
BACKGROUND OF THE INVENTION
[0003] Referring to Figure 1 A, a known, discrete high electron mobility transistor (HEMT) may include drain pad 10, source pad 12, and gate pad 14. Drain pad 10 is electrically connected to a plurality of drain runners 16, and source pad 12 is electrically connected to a plurality of source runners 18. Usually, drain pad 10 and source pad 12, and runners 16, 18 are arranged parallel to one another. In addition, in one conventional arrangement, drain runners 16 and source runners 18 are alternated in order to distribute current evenly through drain pad 10 and source pad 12. In a device according to Figure 1A, the area between each two opposing runners 16, 18 is an active area.
[0004] Referring next to Figure IB, a portion A of an active area of the device of Figure 1A is enlarged to illustrate a plurality of drain fingers 20 that are electrically connected and extend away from each drain pad 10, and a plurality of source fingers 22 that are electrically connected to and extend away from each source pad 12. It should be noted that drain fingers 20 and source fingers 22 alternate along drain pad 16 and source pad 18, whereby an interdigitated configuration is attained. Gate electrode 24 meanders through the space between drain pad 16, drain fingers 20, source pad 18, and source fingers 22, and, although not shown, is connected to a gate runner which electrically connects gate electrode 24 to gate pad 14. [0005] Referring next to Figure 1 C, a typical HEMT includes substrate 25, which may be formed from GaN, Si, SiC, or Sapphire, first semiconductor body 26 formed from one πi-nitride semiconductor such as GaN and disposed over substrate 25, and a second semiconductor body 28 formed of another HI- nitride semiconductor of a different band gap such as AlGaN disposed over first semiconductor body 26. First semiconductor body 26 and second semiconductor body 28 form heterojunction 30, which due to piezoelectric polarization forms a two dimensional electronic gas (2DEG) at or near heterojunction 30. The 2DEG so formed is highly conductive and serves as a channel for conducting current between a source finger 20 and a drain finger 22. It should be noted that in a typical device source fingers 22 and drain fingers 20 are connected to second semiconductor body 28 by a highly conductive ohmic contact layer 32.
[0006] In the device shown by Figure 1C, gate electrode 24 is insulated form second semiconductor body 28 by gate insulation layer 34. In another variation, gate electrode 24 can make a schottky contact with second semiconductor body 28, as seen, for example, in Figure ID. [0007] The devices illustrated by Figure 1 C and Figure ID are depletion mode devices, meaning that the device is nominally on and the activation of gate electrode 24 in each device by application of an appropriate voltage interrupts the 2DEG to turn the device off. Enhancement mode HEMTs are shown in U.S. Provisional Application Serial No. 60/544,626, filed February 12, 2004, the disclosure of which is incorporated herein by reference and U.S. patent application entitled El-Nitride Bidirectional Switch, filed in the name of Daniel M. Kinzer and Robert Beach concurrently with the present application, the disclosure of which is incorporated by reference. Bidirectional devices can include one gate electrode, or two gate electrodes. Figure IE illustrates a bidirectional discrete device which includes two gate electrodes. [0008] The prior art devices described with reference to Figures 1A-1E are discrete devices, meaning that each of these devices occupies a single, discrete semiconductor die. Due to the high breakdown voltage and current carrying capabilities El-nitride power devices occupy only a small area on a die. Thus, IE-nitride-based semiconductor power devices are very small compared to silicon-based devices.
[0009] As with other devices, El-nitride semiconductor power devices need to be packaged so that they may be used in an electronic application, such as a power supply application, or motor control application. In a semiconductor package containing a IE-nitride-based power semiconductor device, the packaging elements are thought to contribute the most to the overall size of the package due to the small size of the El-nitride power devices. Because many power applications require more than one power semiconductor device, it is expected that packaging, not the die, will contribute the most to the amount of space that is occupied by IE-nitride-based power semiconductor packages.
SUMMARY OF THE INVENTION
[0010] According to the present invention an integrated device includes two or more El-nitride power semiconductor devices which are formed in a single common semiconductor die. As a result, in applications requiring more than one power device, an integrated device according to the present invention can be packaged in a common package, which results in space saving among other advantages. [0011] A device according to the first embodiment of the present invention is an integrated device that includes two El-nitride-based power devices connected in a half-bridge configuration.
[0012] A device according to the second embodiment of the present invention is an integrated device that includes six IE-nitride-based power devices connected to form three half-bridges for use in, for example, a three phase power application.
[0013] A device according to the third embodiment of the present invention is an integrated device that includes four El-nitride-based power devices connected in a H-bridge configuration.
[0014] A device according to the fourth embodiment of the present invention is an integrated device which includes two IE-nitride based bidirectional devices connected to form a half-bridge and two IE-nitride based devices having a common drain for use in, for example, boost converter applications.
[0015] A device according to the fifth embodiment of the present invention is an integrated device which include four El-nitride based schottky diodes in a full bridge configuration.
[0016] Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
BRIEF DESCRTPTION OF THE DRAWINGS
[0017] Figure 1 A is a top plan view of a discrete IE-nitride power device according to the prior art.
[0018] Figure IB is an enlarged view of portion A of an active area of the device shown in Figure 1 A. [0019] Figure 1C is a cross-sectional view of an example of a device according to the prior art taken along line B-B in Figure IB viewed in the direction of the arrows.
[0020] Figure ID is a cross-sectional view of another example of a device according to the prior art taken along line B-B in Figure IB viewed in the direction of the arrows.
[0021] Figure IE shows a top plan view of a bidirectional IE-nitride device which includes two gate electrodes.
[0022] Figure 2 is a top plan view of an integrated half-bridge device according to the first embodiment of the present invention.
[0023] Figure 3 is a top plan view of an integrated three-phase device according to the second embodiment of the present invention.
[0024] Figure 4 is a top plan view of an integrated H-bridge device according to the third embodiment of the present invention.
[0025] Figure 5 is a top plan view of an integrated device according to the fourth embodiment of the present invention, which includes two El-nitride based bidirectional devices connected to form a half-bridge and two IE-nitride based devices having a common drain.
[0026] Figure 6A shows a top plan view of a IE-nitride schottky device according to prior art.
[0027] Figure 6B shows a cross-sectional view of a schottky device according to the prior art taken along line 6B-6B in Figure 6A and viewed in the direction of the arrows.
[0028] Figure 7 shows a top plan view of an integrated IE-nitride based schottky bridge according to the fifth embodiment of the present invention.
[0029] Figures 8A-8C illustrate integrated devices according to the present invention each with a feature for attaining electrical isolation between the two devices. DETAILED DESCRIPTION OF THE FIGURES
[0030] Referring to Figure 2, an integrated device according to the first embodiment of the present invention includes two HEMTs formed on one die and interconnected to form a half-bridge. The term integrated as used herein means that the devices are formed in a common die. Specifically, an integrated device according to the first embodiment includes a high side HEMT 36, which includes drain pad 10, and gate pad 14, and a low side HEMT 38, which includes source pad 12 and gate pad 14. According to the present invention high side HEMT 36 and low side HEMT 38 are formed in a single die. Thus, a device according to the first embodiment can be packaged together, thereby saving space in a power application. [0031] It should be noted that to form a half-bridge the drain pad of low side HEMT 38 and the source pad of high side HEMT 36 are combined into a single pad, switched node pad 40, which serves as the output pad for the half- bridge.
[0032] Referring next to Figure 3, an integrated device according to the second embodiment may include three half-bridges formed in a single die. As seen in Figure 3, drain pads 10 of high side HEMTs 36 are interconnected to form a single pad, bus pad 42, and source pads 12 of low side HEMTs 38 are interconnected to form a single pad, ground pad 44, for the three phase bridge according to the second embodiment of the present invention. [0033] Referring next to Figure 4, an integrated device according to the third embodiment includes four HEMTs formed in a single die and integrated into an H bridge configuration. In this embodiment drain pads 10 of high side HEMTs 36 are connected to one another to form bus pad 42, source pads 12 of low side HEMTs are connected together to form ground pad 44. The source pad of one high side HEMT 36 is common with the drain pad of one low side HEMT 38 to form a first output pad 40A, and the source pad of the other high side HEMT 36 is common with the drain pad of the other low side HEMT 38 to form second output pad 40B.
[0034] Referring next to Figure 5, an integrated device according to the fourth embodiment of the present invention may include two bidirectional HEMTs integrated in a half-bridge configuration. That is, one bidirectional HEMT is a high side device 46 and the other is low side device 48. It should be noted that each bidirectional HEMT in the fourth embodiment includes two gate pads 14A, 14B. Also, it should be noted that due to bidirectionality, HEMTs 36, 38 in the fourth embodiment only include power pads 50, rather than source pads and drain pads. As seen in Figure 5, one power pad 52 is common to both bidirectional HEMTs, and serves as the switched output pad 40.
[0035] A device according to the fourth embodiment includes first HEMT 54 and second HEMT 56 integrated to have a common drain pad 58. Thus, according to the fourth embodiment, a device can be formed which is the integration of two integrated devices. A device according to the fourth embodiment can be used to form a bridgeless boost converter. [0036] IE-nitride semiconductor systems can also be used for forming diodes, such as schottky diodes. Referring for example to Figures 6A, 6B in which like numerals identify like numbers, a schottky diode 60 in IE-nitride system does not include a gate, but rather includes anode electrode 62, which makes a schottky contact with second semiconductor body 28, and cathode electrode 64 which makes an ohmic contact with second semiconductor body 28. It should be noted that similar to a HEMT, anode electrodes 62, and cathode electrodes 64 are connected to respective runners 66 which are in turn electrically connected to anode pad 68 and cathode pad 70. [0037] Referring to Figure 7, an integrated device according to the fifth embodiment is a schottky bridge that includes four IE-nitride schottky diodes that are arranged in a full-bridge configuration. Specifically, anode pads of the first two schottky devices are integrated to form a common anode pad 61, cathode pads of the second two schottky devices are integrated to form a common cathode pad 63, and the cathode pad of each of the first two schottky devices is integrated with the anode pad of one of the other two second schottky devices to form a third common pad 65, and a fourth common pad 67, whereby a schottky bridge is realized.
[0038] It should be noted that in an integrated device according to the present invention, because two or more devices are formed in one die, there may be a need for electrically isolating the devices. To achieve isolation, all or a portion of second semiconductor body 28 may be removed to interrupt the 2DEG whenever desired in order to achieve electrical isolation. Thus, for example, when in an integrated device according to the present invention, two HEMTs 100, 102 are found in a common die, a recess 104 can be formed in second semiconductor body 28 to a depth that will cause an interruption in the 2DEG and thus electrically isolates the two devices as illustrated in Figure 8 A. Recess 104 can be extended through second semiconductor body 28 to first semiconductor body 26 as illustrated in Figure 8B. [0039] Alternatively, as seen, for example, in Figure 8C, second semiconductor layer 28 may include an implanted region 106 that includes crystal damage to first and second semiconductor bodies 26, 28 which causes an interruption in the 2DEG at selected locations between devices 100, 102 to attain electrical isolation between the same. Once an isolated portion of the 2DEG is interrupted, the high resistivity of the first semiconductor body 26 can be relied on for isolation. Thus, two or more devices may be formed on a single die. [0040] It should be noted that an HEMT or a schottky device as described herein as prior art, is preferred as a building block for an integrated device according to the present invention. However, it should be understood that the present invention is not limited to the configurations disclosed herein. [0041] Furthermore, although a GaN/AlGaN heterojunction is preferred, other IE-nitride combinations are within the scope of the present invention. [0042] Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.

Claims

WHAT IS CLAIMED IS: 1. An integrated semiconductor device comprising: a first El-nitride based semiconductor device; a second IE-nitride based semiconductor device; wherein said first El-nitride based semiconductor device and said second IE-nitride based semiconductor device are formed in a common die to form an integrated device.
2. An integrated device according to claim 1, wherein said first and said second semiconductor device are high electron mobility transistors.
3. An integrated device according to claim 1, wherein said first and said second semiconductor devices are integrated to form a half-bridge.
4. An integrated device according to claim 3, wherein said half- bridge includes a switched node pad electrically connected and common to both said first and said second IE-nitride semiconductor devices.
5. An integrated device according to claim 1, further comprising a third IE-nitride semiconductor device and a fourth IE-nitride semiconductor device formed in said common die.
6. A integrated device according to claim 5, wherein said first, said second, said third, and said fourth semiconductor devices are high electron mobility transistors interconnected to form an H bridge.
7. An integrated device according to claim 5, wherein said first, said second, said third and said fourth semiconductor devices are schottky diodes interconnected to form a rectifier bridge.
8. An integrated device according to claim 5, wherein said first and said second devices are bidirectional and are interconnected to form a half- bridge, and said third and said fourth devices are high electron mobility transistors interconnected to have a common drain.
9. An integrated device according to claim 1, wherein said first and said second semiconductor devices are interconnected to form a first half- bridge, and further comprising a third, a fourth, a fifth and a six IE-nitride semiconductor devices all formed in a common die, wherein said fourth and said third and said fourth device are connected to form a second half-bridge, and said fifth and said sixth semiconductor device are connected to form a third half-bridge.
10. An integrated device according to claim 9, wherein said first, said second, said third, said fourth, said fifth, and said sixth devices are high electron mobility transistors.
11. An integrated device according to claim 9, wherein each half bridge includes a switched node pad common to its respective devices.
12. An integrated device according to claim 9, wherein each half bridge is connected to a common bus pad, and a common ground pad.
13. An integrated device according to claim 1, wherein said IE- nitride semiconductor device are formed in a die which include a first IE- semiconductor body of a first kind, and a second semiconductor body of a second kind, said second semiconductor body having a different band gap than said first semiconductor body.
14. An integrated device according to claim 13, wherein said each semiconductor device includes two spaced ohmic electrodes and a gate electrode.
15. An integrated device according to claim 14, wherein said gate electrode makes a schottky contact with said second semiconductor body.
16. An integrated device according to claim 14, wherem said gate electrode is insulated from said second semiconductor body by a gate insulation body.
17. An integrated device according to claim 13, wherein at least one of said semiconductor devices includes an ohmic electrode and a schottky electrode.
18. An integrated device according to claim 13, wherein said first semiconductor body is comprised of GaN, and said second semiconductor body is comprised of AlGaN.
19. An integrated device according to claim 13, wherein said devices are electrically isolated from one another.
20. An integrated device according to claim 19, wherein a recess is formed in said second semiconductor body to electrically isolate said devices.
21. An integrated device according to claim 20, wherein said recess reaches said first semiconductor body.
22. An integrated device according to claim 19, wherein said second semiconductor body includes implanted region to isolate said semiconductor devices.
PCT/US2005/004388 2004-02-12 2005-02-14 Integrated iii-nitride power devices Ceased WO2005079293A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006553268A JP2007522677A (en) 2004-02-12 2005-02-14 Integrated Group III-Nitride Power Device
DE112005000352T DE112005000352T5 (en) 2004-02-12 2005-02-14 Integrated III-nitride power arrangements

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54462604P 2004-02-12 2004-02-12
US60/544,626 2004-02-12
US11/056,794 2005-02-11
US11/056,794 US7550781B2 (en) 2004-02-12 2005-02-11 Integrated III-nitride power devices

Publications (2)

Publication Number Publication Date
WO2005079293A2 true WO2005079293A2 (en) 2005-09-01
WO2005079293A3 WO2005079293A3 (en) 2006-04-06

Family

ID=34889856

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/004388 Ceased WO2005079293A2 (en) 2004-02-12 2005-02-14 Integrated iii-nitride power devices

Country Status (5)

Country Link
US (1) US7550781B2 (en)
JP (1) JP2007522677A (en)
KR (1) KR100868103B1 (en)
DE (1) DE112005000352T5 (en)
WO (1) WO2005079293A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187167A (en) * 2006-12-11 2008-08-14 Internatl Rectifier Corp Power management equipment
WO2008155083A1 (en) * 2007-06-18 2008-12-24 Microgan Gmbh Semiconductor component with nested contacts
WO2010047016A1 (en) * 2008-10-21 2010-04-29 パナソニック株式会社 Bidirectional switch
JP2010530619A (en) * 2007-06-18 2010-09-09 ミクロガン ゲーエムベーハー Electrical circuit with vertical contact
US8536622B2 (en) 2010-10-13 2013-09-17 Fujitsu Semiconductor Limited Semiconductor device and power supply apparatus
US12074093B2 (en) 2019-08-30 2024-08-27 Panasonic Intellectual Property Management Co., Ltd. Integrated semiconductor device

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
JP2008153748A (en) * 2006-12-14 2008-07-03 Matsushita Electric Ind Co Ltd Bidirectional switch and bidirectional switch driving method
US8525224B2 (en) * 2007-03-29 2013-09-03 International Rectifier Corporation III-nitride power semiconductor device
GB2457410B (en) * 2007-06-22 2012-01-04 Panasonic Corp Plasma display panel driving device and plasma display
EP2887402B1 (en) * 2007-09-12 2019-06-12 Transphorm Inc. III-nitride bidirectional switches
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8680579B2 (en) * 2007-09-20 2014-03-25 International Rectifier Corporation Individually controlled multiple III-nitride half bridges
US8063616B2 (en) * 2008-01-11 2011-11-22 International Rectifier Corporation Integrated III-nitride power converter circuit
US8659275B2 (en) * 2008-01-11 2014-02-25 International Rectifier Corporation Highly efficient III-nitride power conversion circuit
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
JP5338433B2 (en) * 2008-09-30 2013-11-13 富士電機株式会社 Gallium nitride semiconductor device and manufacturing method thereof
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US9502973B2 (en) * 2009-04-08 2016-11-22 Infineon Technologies Americas Corp. Buck converter with III-nitride switch for substantially increased input-to-output voltage ratio
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5530682B2 (en) * 2009-09-03 2014-06-25 パナソニック株式会社 Nitride semiconductor device
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
US8624662B2 (en) 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
JP2011165749A (en) * 2010-02-05 2011-08-25 Panasonic Corp Semiconductor device
JP5895170B2 (en) 2010-02-23 2016-03-30 パナソニックＩｐマネジメント株式会社 2-wire AC switch
US8981380B2 (en) * 2010-03-01 2015-03-17 International Rectifier Corporation Monolithic integration of silicon and group III-V devices
US9219058B2 (en) * 2010-03-01 2015-12-22 Infineon Technologies Americas Corp. Efficient high voltage switching circuits and monolithic integration of same
JP5789967B2 (en) * 2010-12-03 2015-10-07 富士通株式会社 Semiconductor device, manufacturing method thereof, and power supply device
US9263439B2 (en) * 2010-05-24 2016-02-16 Infineon Technologies Americas Corp. III-nitride switching device with an emulated diode
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
WO2012176399A1 (en) 2011-06-24 2012-12-27 パナソニック株式会社 Nitride semiconductor device
CN103597588B (en) 2011-07-12 2016-10-05 松下知识产权经营株式会社 Nitride semiconductor device
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
KR101946008B1 (en) * 2012-07-17 2019-02-08 삼성전자주식회사 High electron mobility transistor and method of manufacturing the same
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US20140070627A1 (en) * 2012-09-07 2014-03-13 International Rectifier Corporation Integrated Group III-V Power Stage
DE212012000287U1 (en) * 2012-09-28 2015-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor component having at least one contact structure for supplying and / or removing charge carriers
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
KR102083495B1 (en) 2013-01-07 2020-03-02 삼성전자 주식회사 Complementary Metal Oxide Semiconductor device, optical apparatus comprising CMOS device and method of manufacturing the same
US9041067B2 (en) * 2013-02-11 2015-05-26 International Rectifier Corporation Integrated half-bridge circuit with low side and high side composite switches
JP6522521B2 (en) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド Electrode of semiconductor device and method of manufacturing the same
KR102034712B1 (en) * 2013-03-12 2019-10-21 엘지이노텍 주식회사 Power semiconductor device and package
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
JP6277429B2 (en) * 2013-05-20 2018-02-14 パナソニックＩｐマネジメント株式会社 Semiconductor device
US9537425B2 (en) 2013-07-09 2017-01-03 Transphorm Inc. Multilevel inverters and their components
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US10236236B2 (en) * 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
TWI577022B (en) 2014-02-27 2017-04-01 台達電子工業股份有限公司 Semiconductor device and semiconductor device package using the same
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
WO2016017068A1 (en) 2014-07-30 2016-02-04 パナソニックＩｐマネジメント株式会社 Semiconductor device
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10200030B2 (en) 2015-03-13 2019-02-05 Transphorm Inc. Paralleling of switching devices for high power circuits
US20160293597A1 (en) 2015-04-06 2016-10-06 Infineon Technologies Austria Ag Integrated Semiconductor Device
TWI584467B (en) 2015-09-24 2017-05-21 台達電子工業股份有限公司 Semiconductor device
JP6888013B2 (en) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド Enhancement Mode Group III Nitride Devices with AL (1-x) Si (x) O-Gate Insulators
US9722065B1 (en) 2016-02-03 2017-08-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
DE102016205079B4 (en) * 2016-03-29 2021-07-01 Robert Bosch Gmbh High-electron-mobility transistor
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US10741644B2 (en) * 2016-11-22 2020-08-11 Delta Electronics, Inc. Semiconductor devices with via structure and package structures comprising the same
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
US10601300B2 (en) 2017-05-19 2020-03-24 Efficient Power Conversion Corporation Integrated gallium nitride based DC-DC converter
DE102017210165A1 (en) * 2017-06-19 2018-12-20 Robert Bosch Gmbh Multi-transistor arrangement, bridge rectifier and method for producing a multiple transistor arrangement
US10637411B2 (en) 2017-10-06 2020-04-28 Qualcomm Incorporated Transistor layout for improved harmonic performance
EP4679972A3 (en) * 2021-05-25 2026-04-01 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
US12349391B2 (en) * 2022-10-13 2025-07-01 Microwave Technology Inc. RF power transistor having off-axis layout

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
US4511813A (en) * 1981-06-12 1985-04-16 Harris Corporation Dual-gate MESFET combiner/divider for use in adaptive system applications
US5387880A (en) * 1993-10-20 1995-02-07 Trw Inc. Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias
JPH08250520A (en) * 1995-03-14 1996-09-27 Mitsubishi Electric Corp Field effect type semiconductor device
JP3439290B2 (en) * 1995-12-28 2003-08-25 日本電気株式会社 Semiconductor device
JP3478005B2 (en) * 1996-06-10 2003-12-10 ソニー株式会社 Method for etching nitride-based compound semiconductor and method for manufacturing semiconductor device
JP2000277724A (en) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ Field effect transistor, semiconductor device having the same, and method of manufacturing the same
US6861828B2 (en) * 2000-02-08 2005-03-01 The Furukawa Electric Co., Ltd. Apparatus and circuit for power supply, and apparatus for controlling large current load
JP2001223341A (en) * 2000-02-08 2001-08-17 Furukawa Electric Co Ltd:The Power supply
JP4186032B2 (en) * 2000-06-29 2008-11-26 日本電気株式会社 Semiconductor device
JP4022708B2 (en) * 2000-06-29 2007-12-19 日本電気株式会社 Semiconductor device
JP5392959B2 (en) * 2000-09-21 2014-01-22 ケンブリッジ セミコンダクター リミテッド Semiconductor device and method for forming a semiconductor device
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP4177048B2 (en) * 2001-11-27 2008-11-05 古河電気工業株式会社 Power converter and GaN-based semiconductor device used therefor
JP2003228320A (en) 2002-02-05 2003-08-15 Matsushita Electric Ind Co Ltd Plasma display device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187167A (en) * 2006-12-11 2008-08-14 Internatl Rectifier Corp Power management equipment
WO2008155083A1 (en) * 2007-06-18 2008-12-24 Microgan Gmbh Semiconductor component with nested contacts
JP2010530619A (en) * 2007-06-18 2010-09-09 ミクロガン ゲーエムベーハー Electrical circuit with vertical contact
WO2010047016A1 (en) * 2008-10-21 2010-04-29 パナソニック株式会社 Bidirectional switch
JP2010103158A (en) * 2008-10-21 2010-05-06 Panasonic Corp Bidirectional switch
US8344463B2 (en) 2008-10-21 2013-01-01 Panasonic Corporation Bidirectional switch
US8569843B2 (en) 2008-10-21 2013-10-29 Panasonic Corporation Semiconductor device
US8536622B2 (en) 2010-10-13 2013-09-17 Fujitsu Semiconductor Limited Semiconductor device and power supply apparatus
US12074093B2 (en) 2019-08-30 2024-08-27 Panasonic Intellectual Property Management Co., Ltd. Integrated semiconductor device

Also Published As

Publication number Publication date
JP2007522677A (en) 2007-08-09
US7550781B2 (en) 2009-06-23
DE112005000352T5 (en) 2007-03-01
WO2005079293A3 (en) 2006-04-06
US20050189562A1 (en) 2005-09-01
KR100868103B1 (en) 2008-11-11
KR20060110357A (en) 2006-10-24

Similar Documents

Publication Publication Date Title
US7550781B2 (en) Integrated III-nitride power devices
JP6012671B2 (en) Monolithic composite group III nitride transistor with high voltage group IV enable switch
US8248042B2 (en) Power converter
US7999310B2 (en) ACCUFET with Schottky source contact
US9911731B2 (en) Operational gallium nitride devices
TWI499058B (en) Gallium nitride diode and integrated components
JP5895170B2 (en) 2-wire AC switch
US8569843B2 (en) Semiconductor device
US9691889B2 (en) Integrated power device
JP5666157B2 (en) Bidirectional switch element and bidirectional switch circuit using the same
US8227831B2 (en) Semiconductor device having a junction FET and a MISFET for control
TW201143017A (en) Electronic devices and components for high efficiency power circuits
JP2018056506A (en) Semiconductor device
TWI682515B (en) Power transistor with distributed gate
CN100495738C (en) Integrated III-nitride power devices
US7485932B2 (en) ACCUFET with Schottky source contact
TWI645540B (en) Semiconductor device
CN117810187A (en) Semiconductor device and production method thereof
CN119447129A (en) Semiconductor Devices

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 1020067016011

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2006553268

Country of ref document: JP

Ref document number: 1120050003523

Country of ref document: DE

Ref document number: 200580004848.0

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020067016011

Country of ref document: KR

RET De translation (de og part 6b)

Ref document number: 112005000352

Country of ref document: DE

Date of ref document: 20070301

Kind code of ref document: P

WWE Wipo information: entry into national phase

Ref document number: 112005000352

Country of ref document: DE

122 Ep: pct application non-entry in european phase
REG Reference to national code

Ref country code: DE

Ref legal event code: 8607