WO2005045890A2 - Method and apparatus for etch endpoint detection - Google Patents
Method and apparatus for etch endpoint detection Download PDFInfo
- Publication number
- WO2005045890A2 WO2005045890A2 PCT/US2004/034840 US2004034840W WO2005045890A2 WO 2005045890 A2 WO2005045890 A2 WO 2005045890A2 US 2004034840 W US2004034840 W US 2004034840W WO 2005045890 A2 WO2005045890 A2 WO 2005045890A2
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- WIPO (PCT)
- Prior art keywords
- plasma
- optical emission
- etching process
- endpoint
- monitoring
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 131
- 238000001514 detection method Methods 0.000 title description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 104
- 230000008569 process Effects 0.000 claims abstract description 82
- 238000001020 plasma etching Methods 0.000 claims abstract description 51
- 238000012544 monitoring process Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 19
- 230000003466 anti-cipated effect Effects 0.000 claims description 18
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- 239000003989 dielectric material Substances 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
- G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
Definitions
- the present invention relates generally to semiconductor fabrication. More specifically, the present invention relates to endpoint detection during a plasma etching process.
- the semiconductor wafers include integrated circuit devices in the form of multi-level structures defined on a silicon substrate. At a substrate level, transistor devices with diffusion regions are formed. In subsequent levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define a desired integrated circuit device. Also, patterned conductive layers are insulated from other conductive layers by dielectric materials.
- the series of manufacturing operations for defining features on the semiconductor wafers can include many processes such as adding, patterning, etching, removing, and polishing, among others, various material layers.
- each process is performed in a precisely controlled environment. Furthermore, each process is closely monitored and analyzed to determine an endpoint of the process with exacting precision.
- One common manufacturing process is plasma etch.
- plasma etching is commonly used to etch conductive and dielectric materials to define features and structures therein.
- the plasma etching is typically performed in plasma etch chambers that are capable of etching selected layers deposited over a substrate as defined by a photoresist mask, h general, the plasma etch chamber is configured to generate, confine, and control a plasma by applying radio frequency (RF) power to one or more processing gases contained within the plasma etch chamber.
- RF radio frequency
- the processing gases within the plasma etch chamber are activated such that a plasma is created.
- the plasma is configured to perform the desired etching of the selected layers of the semiconductor wafer.
- In-situ monitoring and analysis in plasma etching operations can include optical spectrometry.
- optical spectrometry is used to measure properties of plasma optical emissions to provide an endpoint call to a process.
- the endpoint call is required to be accurate so that an etching process can be stopped once an appropriate amount of material has been removed from the semiconductor wafer.
- One problem with current optical spectrometry endpoint detection methods is that the plasma optical emissions are sensitive to changes in the chamber conditions. Thus, changes in the chamber conditions can introduce perturbations in the plasma optical emissions.
- these perturbations in the plasma optical emissions can be comparable to an expected perturbation used to trigger an endpoint call, thus causing a false endpoint call to occur.
- the present invention provides a method and an apparatus for
- the present invention provides a
- the method of the present invention requires the variable aperture to be maintained in a
- the aperture in the fixed position avoids perturbations in the observed plasma optical emission
- a method for monitoring a plasma optical emission is disclosed.
- the method includes collecting optical emission data from a plasma through an aperture
- moveable members are defined by moveable members.
- the moveable members are capable of varying a configuration
- the method also includes holding the moveable members at a particular time to
- the method further includes detecting a
- the method includes performing a plasma etching process within a chamber
- optical emission is monitored through gaps between the moveable confinement rings while the
- FIG. 1 is an illustration showing a plasma etching chamber, in accordance with one
- Figure 2 is an illustration showing an optical emission signal as a function of time during an etching process, in accordance with one embodiment of the present invention
- Figures 3A through 3D shown example aperture variations resulting from movement of
- Figure 4 is an illustration showing variations in an optical emission signal intensity as a function of confinement ring position, in accordance with one embodiment of the present invention
- Figure 5A is an illustration showing a flowchart for a method for monitoring a plasma optical emission, in accordance with one embodiment of the present invention
- Figure 5B is an illustration showing a flowchart for a method for detecting an endpoint of a plasma etching process, in accordance with one embodiment of the present invention
- Figure 6A is an illustration showing an optical emission signal and a confinement ring position as a function of time during a plasma etching process, in accordance with one example implementation of the present invention
- Figure 6B is an illustration showing a pressure variation as a function of time during the plasma etching process example depicted in Figure 6A.
- a method and an apparatus for monitoring a plasma optical emission. More specifically, the present invention provides a method for monitoring the plasma optical emission through a variable aperture to detect an endpoint of a plasma etching process without interferences that could lead to false endpoint calls.
- the method of the present invention requires the variable aperture to be maintained in a fixed position during a time period in which endpoint occurrence is anticipated. Maintaining the aperture in the fixed position avoids perturbations in the observed plasma optical emission signal that could be misinterpreted as a false endpoint.
- FIG. 1 is an illustration showing a plasma etching chamber 101, in accordance with one embodiment of the present invention.
- an electrode 109 is disposed over a volume within which a plasma 111 is to be generated.
- a wafer support structure 105 is located below the volume in which the plasma 111 is to be generated.
- the wafer support structure 105 is an electrostatic chuck.
- the wafer support structure 105 is defined to support a wafer 107 in exposure to the plasma 111.
- the plasma etching chamber 101 also includes a set of confinement rings 113 disposed around a periphery of the volume within which the plasma 111 is to be generated.
- a confinement ring controller 121 is provided to control movement of the set of confinement
- the confinement ring controller 121 is represented as software
- the confinement ring controller 121 executing on a computer system.
- the confinement ring controller 121 executing on a computer system.
- the confinement ring controller 121 executing on a computer system.
- the confinement ring controller 121 is capable of interfacing with mechanics
- the confinement ring controller 121 is also capable
- a window 115 is provided in a wall 103 of the plasma etching chamber
- An optical transmission device 117 is provided for transmitting optical emissions gathered
- the window 115 through the window 115 to spectrometry equipment 119 for analysis.
- the spectrometry equipment 119 for analysis.
- optical transmission device 117 is a fiberoptic cable. However, it should be appreciated that the
- optical transmission device 117 can be any other component capable of adequately transmitting
- the spectrometry equipment 119 represents one or more components or system of
- the wafer In one embodiment, the wafer
- support structure 105 can also serve as an electrode to transfer power to process gases through capacitive coupling.
- the transferred power generates a current (e.g., radio frequency (RF)
- the plasma 111 contains
- the set of confinement rings 113 serve to confine the plasma 111 to a particular volume ("plasma confinement volume") and control a pressure within the plasma confinement volume.
- the set of confinement rings 113 can be moved to increase and decrease a spacing or gap between adjacent confinement rings. In one embodiment, the set of confinement rings 113 are moved through use of a cam ring. However, it should be appreciated that many other manipulation devices can be used to move the set of confinement rings 113 in accordance with etching process requirements.
- each confinement ring in the set of confinement rings 113 can be defined to move at different times and to different extents with respect to the other confinement rings.
- the set of confinement rings 113 can be defined such that their movement causes the gaps between adjacent confinement rings to contract or expand at different times and to different extents.
- movement of the set of confinement rings 113 can be defined to cause the gaps between adjacent confinement rings to change both position and size with respect to a fixed reference point outside the set of confinement rings 113.
- Pressure control within the plasma confinement volume is necessary during operation due to thermal variations within the plasma etching chamber 101 ("chamber"). Temperatures within the chamber may change during operation due to process conditions.
- etching by-product deposition may occur on the chamber internal surfaces during operation.
- the etching by-product deposition will affect the heat transfer characteristics of the chamber, thus causing temperature variations within the chamber.
- the temperature variations within the chamber will have a corresponding affect on the pressure within the chamber. Therefore, during etching processes that require a substantially constant pressure, a mechanism is needed for controlling the pressure within the chamber.
- processing gases flow through the gaps between adjacent confinement rings to exit the plasma confinement volume.
- movement of the set of confinement rings serves to adjust a flow area provided for processing gas egress from the plasma confinement volume. Therefore, adjustment of the subject flow area provides a corresponding control of the pressure within the plasma confinement volume.
- the set confinement rings are moved to maintain a target pressure within the plasma confinement volume.
- the particular materials removed from the wafer 107 become part of the plasma 111 composition.
- characteristics of the plasma 111 are prone to change.
- An optical emission spectrum of the plasma 111 is one such characteristic that changes as a result of plasma 111 composition changes during the etching process.
- Useful information about the etching process can be obtained through analysis of the optical emission spectrum of the plasma 111.
- the optical emission spectrum of the plasma 111 can be monitored to detect signature changes or perturbations in the plasma 111 composition that are indicative of a particular condition on the wafer 107 surface.
- FIG. 2 is an illustration showing an optical emission signal as a function of time during an etching process, in accordance with one embodiment of the present invention.
- the optical emission signal gathered from the plasma 111 is defined by a spectrum spanning a range of wavelengths.
- the optical emission signal can be separated into channel signals for analysis, wherein the channel signals are defined by either individual wavelengths or groups of wavelengths. For example, if an etching process is to be stopped upon removal of a particular material, a wavelength associated with the particular material will be isolated for analysis.
- Figure 2 shows a curve corresponding to the wavelength associated with the particular material. As shown, during the etching process the curve will follow a well-behaved slope that is primarily dependent on environmental conditions within the plasma etching chamber 101. Upon completing removal of the particular material, the amount of the particular material in the plasma 111 will change. Thus, a perturbation in intensity of the optical emission signal generated by the plasma 111 at the wavelength corresponding to the particular material will occur.
- Detection of this perturbation provides a trigger for issuing an endpoint call. Additionally, a combination of perturbations from one or more wavelengths, or wavelength bands, can also used to identify an endpoint.
- optical emission signals are gathered from the plasma through a window.
- the window is disposed at a location affording an unobscured view of the plasma.
- the window 115 is disposed at a location providing a view of the plasma 111 through a variable aperture, wherein the aperture varies in size and location with respect to the window 115.
- the window 115 is disposed outside the set of confinement rings 113 to allow viewing of the plasma 111 through the gaps between adjacent confinement rings.
- the set of confinement rings 113 define a collimating aperture with respect to the window 115.
- a size and a location of the collimating aperture will change with respect to the window 115. Changes in the characteristics of the collimating aperture will have a corresponding affect on the optical emission signal gathered through the window 115. For example, a decrease in size of the aperture will cause a corresponding decrease in intensity of the gathered optical emission signal, vice versa.
- FIGS 3A through 3D show example aperture variations resulting from movement of the confinement rings, in accordance with one embodiment of the present invention. With respect to Figures 3A-3D, gaps 310A-301C are defined between adjacent confinement rings and a gap 30 ID is defined between a lower confinement ring and the wafer support structure 105.
- the confinement rings 113 and wafer support structure 105 act to collimate a view of the plasma 111 from the window 115. Therefore, a potential viewable area between the window 115 and the plasma 111 is defined by planes 303 A and 303B. With respect to Figure 3 A, an aperture for viewing the optical emissions generated by the plasma 111 is defined by the gaps
- Figures 3B-3D illustrate that as the confinement rings are moved, the characteristics of the aperture change in terms of size and location. With respect to Figure 3B, the aperture is
- FIG. 3 A-3D is provided for exemplary purposes. It should be appreciated that movement of the confinement rings can be performed in a fine or coarse manner. Many additional confinement ring positions are possible beyond those specifically illustrated in Figures 3A-3D. Nevertheless, the movement of the confinement rings as illustrated in Figures 3A-3D show how the aperture for viewing the optical emissions generated by the plasma 111 can change in size and position. As the size and position of the aperture changes, the intensity of the optical emissions gathered through the window 115 will also change.
- Figure 4 is an illustration showing variations in an optical emission signal intensity as a function of confinement ring position, in accordance with one embodiment of the present
- the confinement ring position is quantified in terms of counts, where 0 counts (not shown) is fully open and 1000 counts (not shown) is fully closed and 1 count is equal to approximately 0.001 inch of confinement ring movement.
- the overall aperture size tends to decrease, thus causing a decreasing trend in signal intensity.
- the signal intensity also does not decrease monotonically with closure of the confinement rings. Therefore, the magnitude by which the signal intensity is affected by confinement ring movement is dependent on the confinement ring position when the movement occurs.
- the confinement rings are positioned to provide the largest aperture size possible while adhering to pressure control requirements.
- the confinement rings are positioned such that a variation of signal intensity due to confinement ring movement is minimized to the extent possible while adhering to pressure control requirements.
- the perturbations in optical emission signal resulting from variations in the aperture characteristics due to confinement ring movement becomes even more problematic in certain etching processes and applications.
- a wafer may have only about 1% or less film exposed (i.e., open area) with the balance of film being covered by a mask. With low open areas, perturbations in the optical emission signal used to trigger an endpoint become small relative to a large background signal. Therefore, perturbations in optical emission signal resulting from variations in the aperture characteristics can become comparable to the perturbations used to trigger the endpoint call.
- FIG. 5A is an illustration showing a flowchart for a method for monitoring a plasma optical emission, in accordance with one embodiment of the present invention.
- the method includes an operation 501 in which optical emission data is collected from a plasma through an aperture defined by moveable members. Movement of the moveable members causes the aperture configuration to vary.
- the movable members are represented as confinement rings.
- the aperture can be defined by any members of the chamber between which a view to the plasma is offered.
- a window is provided for collecting the optical emission data. The window is disposed outside of the moveable members and is oriented to collect the optical emission data through the aperture.
- the method also includes an operation 503 in which the moveable members are held at a particular time. Holding of the moveable members causes the aperture to maintain a fixed configuration. Thus, holding of the moveable members eliminates perturbations in the optical emission data that are caused by variation of the aperture characteristics (i.e., size and location).
- the particular time at which the moveable members are held in operation 503 corresponds to a pre-designated time period prior to an anticipated endpoint time.
- the pre-designated time period is within a range extending from about 1% to about 50% of the expected etching process duration. For example, if the expected etching process duration is 30 seconds, the pre-designated time period would be within a range extending from about 0.3 second to about 15 seconds before the anticipated endpoint time.
- the pre-designated time period would be within a range extending from about 3 seconds to about 150 seconds before the anticipated endpoint time. It should be appreciated, that the specific pre-designated time period within the 1% to 50% range as described above is established to ensure that dependent process conditions (i.e., pressure) remain within acceptable ranges.
- the method further includes an operation 505 in which a specific perturbation in the plasma optical emission is detected while holding the moveable members. Detecting the
- the specific perturbation in the plasma optical emission includes monitoring a specific wavelength of the plasma optical emission, wherein the specific wavelength is associated with a material constituent of the plasma that is representative of a plasma etching process condition.
- the specific perturbation in the plasma optical emission is indicative of an endpoint condition.
- the method can include an operation for continuing to hold the moveable members for a period of time after detecting the specific perturbation in the plasma optical emission. Holding the moveable members after detecting the specific perturbation allows for confirmation of an etching process condition without interference from perturbations caused by variation of the aperture characteristics.
- the movable members are held after detecting the endpoint condition for a time period is within a range extending from about 1% to about 50% of the etching process duration.
- FIG. 5B is an illustration showing a flowchart for a method for detecting an endpoint of a plasma etching process, in accordance with one embodiment of the present invention.
- the method includes an operation 507 in which a plasma etching process is started.
- the plasma etching process is performed within a chamber having movable confinement rings.
- the moveable confinement rings are provided to both confine the plasma to a confinement volume and control a pressure within the confinement volume.
- an operation 507 in which a plasma etching process is started.
- the plasma etching process is performed within a chamber having movable confinement rings.
- the moveable confinement rings are provided to both confine the plasma to a confinement volume and control a pressure within the confinement volume.
- an operation 507 in which a plasma etching process is started.
- the plasma etching process is performed within a chamber having movable confinement rings.
- the moveable confinement rings are provided to both confine the plasma to a confinement volume and control
- the pre-designated time period prior to the anticipated endpoint time is reached.
- the pre-designated time period prior to the anticipated endpoint time is reached.
- operation 513 is performed to hold the moveable confinement rings in a fixed position.
- endpoint may cause a small change in pressure within the confinement volume that is not
- the method further includes an operation 515 for monitoring plasma optical emissions
- the confinement rings define an aperture through which the plasma optical emission is
- a window disposed outside the confinement rings is used to monitor the plasma
- monitoring the plasma optical emissions includes
- wavelength is associated with a material constituent of the plasma that is representative of a
- plasma etching process is stopped upon detecting the endpoint. In one embodiment, after
- the moveable confinement rings are held for a period of time to allow for
- FIG. 6A is an illustration showing an optical emission signal and a confinement ring position as a function of time during a plasma etching process, in accordance with one example implementation of the present invention.
- One count in confinement ring position is approximately equal to 0.001 inch.
- a zero count confinement ring position corresponds to the confinement rings in a fully open position.
- a 1000 count confinement ring position corresponds to the confinement rings in a fully closed position.
- the confinement rings are moved to adjust a pressure within a plasma confinement volume.
- a change in confinement ring position has an effect on the optical emission signal.
- Figure 6A demonstrates that a small change in confinement ring position can cause a substantial optical emission signal variation that is on the order of what is needed to trigger endpoint.
- confinement ring movement can cause perturbations in the optical emission signal that may lead to false endpoint calls.
- the pre-designated time prior to anticipated endpoint at which the confinement rings are held occurs at about 72 seconds into the etching process.
- FIG 6A is an illustration showing a pressure variation as a function of time during the plasma etching process example depicted in Figure 6A.
- the confinement rings are moved during the etching process to achieve and maintain a required pressure within the plasma confinement volume. Once the confinement rings are held at the pre-designated time prior to the anticipated endpoint, the pressure change is minimal. It should be noted, however, that a pressure change does occur at a time coincident with the endpoint because concentrations of plasma constituents change as endpoint is reached. The extent of pressure change at endpoint is within the normal variation observed prior to maintaining the confinement rings at a fixed
- Figure 6B demonstrates that holding the confinement rings in a fixed position during the anticipated endpoint time does not have an adverse effect on the confinement volume pressure. While this invention has been described in terms of several embodiments, it will be appreciated that those skilled in the art upon reading the preceding specifications and studying the drawings will realize various alterations, additions, permutations and equivalents thereof. It is therefore intended that the present invention includes all such alterations, additions, permutations, and equivalents as fall within the true spirit and scope of the invention.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006538103A JP4767862B2 (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for detecting the end of etching |
EP04795935A EP1678480A4 (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for etch endpoint detection |
CN2004800382890A CN1898547B (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for etch endpoint detection |
KR1020067008342A KR101134330B1 (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for etch endpoint detection |
IL175202A IL175202A0 (en) | 2003-10-28 | 2006-04-25 | Method and apparatus for etch endpoint detection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/696,628 | 2003-10-28 | ||
US10/696,628 US7053994B2 (en) | 2003-10-28 | 2003-10-28 | Method and apparatus for etch endpoint detection |
Publications (2)
Publication Number | Publication Date |
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WO2005045890A2 true WO2005045890A2 (en) | 2005-05-19 |
WO2005045890A3 WO2005045890A3 (en) | 2005-11-24 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US2004/034840 WO2005045890A2 (en) | 2003-10-28 | 2004-10-20 | Method and apparatus for etch endpoint detection |
Country Status (8)
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US (1) | US7053994B2 (en) |
EP (1) | EP1678480A4 (en) |
JP (1) | JP4767862B2 (en) |
KR (1) | KR101134330B1 (en) |
CN (1) | CN1898547B (en) |
IL (1) | IL175202A0 (en) |
TW (1) | TWI248644B (en) |
WO (1) | WO2005045890A2 (en) |
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CN105824041A (en) * | 2015-01-28 | 2016-08-03 | 延世大学校产学协力团 | Apparatus for optical emission spectroscopy |
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US8257503B2 (en) * | 2008-05-02 | 2012-09-04 | Lam Research Corporation | Method and apparatus for detecting plasma unconfinement |
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US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
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KR101134330B1 (en) | 2012-04-09 |
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