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Power surface mount light emitting die package

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Publication number
WO2005043627A1
WO2005043627A1 PCT/US2004/034768 US2004034768W WO2005043627A1 WO 2005043627 A1 WO2005043627 A1 WO 2005043627A1 US 2004034768 W US2004034768 W US 2004034768W WO 2005043627 A1 WO2005043627 A1 WO 2005043627A1
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WO
Grant status
Application
Patent type
Prior art keywords
package
substrate
conductive
led
heat
Prior art date
Application number
PCT/US2004/034768
Other languages
French (fr)
Inventor
Peter S. Andrews
Ban P. Loh
Original Assignee
Cree, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01025Manganese [Mn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Abstract

A light emitting die package is disclosed. The die package includes a substrate, a reflector plate, and a lens. The substrate may be made from thermally conductive but electrically insulating material or from a material that is both thermally and electrically conductive. In embodiments wherein the substrate is made from an electrically conductive material, the substrate further includes an electrically insulating, thermally conductive material formed on the electrically conductive material. The substrate has traces for connecting to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad. The lens substantially covers the mounting pad. Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink). The reflector plate includes a reflective surface to direct light from the LED in a desired direction.

Description

POWER SURFACE MOUNT LIGHT EMITTING DIE PACKAGE

INVENTORS Peter S . Andrews Ban P. Loh

RELATED APPLICATIONS

[0001] The present application is a continuation-in-part of United States Patent Application Serial No. 10/446,532 entitled "Power Surface Mount Light Emitting Die Package" filed May 27, 2003, which claims the benefit of United States Provisional Application Serial No.60/408, 254 entitled "Power-SMT, LED Package with Dual Heat-Sinks and an Optical System or Chemical-Coated Lens" filed September 4, 2002.

BACKGROUND

[0002] The present invention relates to the field of packaging semiconductor devices, and more particularly to packaging light emitting diodes.

[0003] Light emitting diodes (LEDs) are often packaged within leadframe packages. A leadframe package typically includes a molded plastic body which encapsulates an LED, a lens portion, and thin metal leads connected to the LED and extending outside the plastic body. The metal leads of the leadframe package serve as the conduit to supply the LED with electrical power and, at the same time, may act to draw heat away from the LED. Heat is generated by the LED when power is applied to the LED to produce light. A portion of the leads extends out from the package body for connection to circuits external to the leadframe package.

[0004] Some of the heat generated by the LED is dissipated by the plastic package body; however, most of the heat is drawn away from the LED via the metal components of the package. The metal leads are typically very thin and have a small cross section. For this reason, capacity of the metal leads to remove heat from the LED is limited. This limits the amount of power that can be sent to the LED thereby limiting the amount of light that can be generated by the LED.

[0005] To increase the capacity of an LED package to dissipate heat, in one LED package design, a heat sink slug is placed under the metal leads within the LED package. The heat sink slug increases the capacity of the LED package to dissipate heat; however, the heat sink slug increases the size, the mass, and the cost of the LED package. Increases in the size, the mass, and the cost are undesirable .

[0006] In another LED package design, the leads of the leadframe are extended (in various shapes and configurations) beyond the immediate edge of the LED package body. This increases the surface area of the portions of the leads exposed to the surrounding air. The increased exposed surface area of the extended leads increases the capacity of the LED package to dissipate heat; however, the extended leads increase the size, the mass, and the cost of the LED package. [0007] Another undesirable aspect of the current leadframe package design relates to problems associated with thermal expansion of the package. When heat is generated, the LED package experiences thermal expansion. Each of the parts of the LED package has a different coefficient of thermal expansion (CTE) . For example, the CTE of the LED, the CTE of the package body, the CTE of the leads, and the CTE of lens are different from each other. For this reason, when heated, each of these parts experience different degrees of thermal expansion resulting in mechanical stresses between the parts of the package thereby adversely affecting its reliability.

[0008] Consequently, there remains a need for an improved LED package that overcomes or alleviates one or more of the shortcomings of the prior art packages.

SUMMARY

[0009] Embodiments of the present invention provide a package for a semiconductor die such as a light emitting diode, the package including a substrate having electrically conductive elements for connecting to a light emitting diode at a mounting pad, a reflector plate coupled to the substrate and substantially surrounding the mounting pad, and lens substantially covering the mounting pad.

[0010] Other embodiments of the present invention provide a semiconductor die package which includes a bottom heat sink and a top heat sink. The bottom heat sink may have traces on its top surface. A semiconductor chip may be mounted on the top surface of the bottom heat sink and electrically connected to the traces . The top heat sink may be mechanically coupled to the bottom heat sink.

[0011] In other embodiments, the bottom heat sink may include a thermally and electrically conductive plate having first and second surfaces. The plate may comprise a metal such as copper, aluminum or alloys of either. A thin, thermally conductive insulating film is formed on portions of the first surface of the metal plate and may be formed on other surfaces of the metal plate .

[0012] Conductive elements such as metal traces and/or metal leads may be formed on the ceramic/polymer film. Since the ceramic/polymer film is insulating, the conductive traces are not in electrical contact with the metal plate. The conductive element may form or be electrically connected to a mounting pad adapted to receive an electronic device such as an LED.

[0013] In some embodiments, one or more via holes may be formed through the substrate. In some embodiments, the via holes may be coated internally with an insulating material such as the ceramic/polymer film. Electrical conductors such as electrically conductive traces may be formed in the via holes to electrically connect conductive elements on the first surface of the substrate to conductive elements on the second surface of the substrate.

[0014] A substrate according to embodiments of the present invention may also include electronic circuitry such as a zener diode and/or a resistor network connected between one or more conductive elements for electro-static discharge (ESD) and/or over-voltage protection.

[0015] Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS [0016] Figure 1A is a perspective view of a semiconductor die package according to one embodiment of the present invention; [0017] Figure IB is an exploded perspective view of the semiconductor package of Figure 1A; [0018] Figure 2A is a top view of a portion of the semiconductor package of Figure 1A; [0019] Figure 2B is a side view of a portion of the semiconductor package of Figure 1A; [0020] Figure 2C is a front view of a portion of the semiconductor package of Figure 1A; [0021] Figure 2D is a bottom view of a portion of the semiconductor package of Figure 1A; [0022] Figure 3 is a cut-away side view of portions of the semiconductor package of Figure 1A; [0023] Figure 4 is a side view of the semiconductor package of Figure 1A with additional elements; [0024] Figure 5 an exploded perspective view of a semiconductor die package according to another embodiment of the present invention; [0025] Figure 6A is a top view of a portion of the semiconductor package of Figure 5; [0026] Figure 6B is a side view of a portion of the semiconductor package of Figure 5; [0027] Figure 6C is a front view of a portion of the semiconductor package of Figure 5; [0028] Figure 6D is a bottom view of a portion of the semiconductor package of Figure 5; [0029] Figure 7A is a top view of a portion of a semiconductor package according to another embodiments of the present invention; [0030] Figure 7B is a front view of the portion of a semiconductor package of Figure 7A; [0031] Figure 7C is a cut-away front view of the portion of a semiconductor package of Figure 7A taken along line A-A; [0032] Figure 8 is a side view of a portion of a semiconductor package according to another embodiment of the present invention; [0033] Figure 9 is a side view of a portion of a semiconductor package according to another embodiment of the present invention; [0034] Figure 10A is a top view of a portion of a semiconductor package according to another embodiments of the present invention; and [0035] Figure 10B is a top view of a portion of a semiconductor package according to anther embodiments of the present invention.

DETAILED DESCRIPTION

[0036] The present invention will now be described with reference to the Figures 1 through 10B, which illustrate various embodiments of the present invention. As illustrated in the Figures, the sizes of layers or regions are exaggerated for illustrative purposes and, thus, are provided to illustrate the general structures of the present invention. Furthermore, various aspects of the present invention are described with reference to a layer or structure being formed on a substrate or other layer or structure. As will be appreciated by those of skill in the art, references to a layer being formed "on" another layer or substrate contemplates that additional layers may intervene. References to a layer being formed on another layer or substrate without an intervening layer are described herein as being formed "directly on" the layer or substrate. Furthermore, relative terms such as beneath may be used herein to describe one layer or regions relationship to another layer or region as illustrated in the Figures. It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, layers or regions described as "beneath" other layers or regions would now be oriented "above" these other layers or regions. The term "beneath" is intended to encompass both above and beneath in this situation. Like numbers refer to like elements throughout.] As shown in the figures for the purposes of illustration, embodiments of the present invention are exemplified by a light emitting die package including a bottom heat sink (substrate) having traces for connecting to a light emitting diode at a mounting pad and a top heat sink (reflector plate) substantially surrounding the mounting pad. A lens covers the mounting pad. In effect, the die package according to some embodiments of the present invention comprises a two part heat sink with the bottom heat sink utilized (in additional to its utility for drawing and dissipating heat) as the substrate on which the LED is mounted and connected, and the top heat sink utilized (in additional to its utility for drawing and dissipating heat) as a reflector plate to direct light produced by the LED. Because both the bottom and the top heat sinks draw heat away from the LED, more power can be delivered to the LED, and the LED can thereby produce more light .

[0038] Further, in the present invention, the die package itself may act as the heat, sink removing heat from the LED and dissipating it. For this reason, the LED die package of the present inventio may not require separate heat sink slugs or leads that extend away from the package. Accordingly, an LED die package according to the present invention may be more compact, more reliable, and less costly to manufacture than a die package of the prior art .

[0039] Figure 1A is a perspective view of a semiconductor die package 10 according to one embodiment of the present invention and Figure IB is an exploded perspective view of the semiconductor package of Figure 1A. Referring to Figures 1A and IB, the light emitting die package 10 of the present invention includes a bottom heat sink 20, a top heat sink 40, and a lens 50.

[0040] The bottom heat sink 20 is illustrated in more detail in Figures 2A through 2D. Figures 2A, 2B, 2C, and 2D provide, respectively, a top view, a side view, a front view, and a bottom view of the bottom heat sink 20 of Figure 1A. Further, Figure 2C also shows an LED assembly 60 in addition co the front view of the bottom heat sink. 20. The LED assembly 60 is also illustrated in Figure IB. Referring to Figures 1A through 2D, the bottom heat sink 20 provides • support for electrical traces 22 and 24; for solder pads 26, 32, and 34; and for the LED assembly 60. For this reason, the bottom heat sink 20 is also referred to as a substrate 20. In the Figures, to avoid clutter, only representative solder pads 26, 32, and 34 are indicated with reference numbers. The traces 22 and 24 and the solder pads 26, 32, and 34 can be fabricated using conductive material. Further, additional traces and connections can be fabricated on the top, side, or bottom of the substrate 20, or layered within the substrate 20. The traces 22 and 24, the solder pads 26, 32, and 34, and any other connections can be interconnected to each other in any combinations using known methods, for example via holes .] In some embodiments, the substrate 20 may be made of material having high thermal conductivity but is electrically insulating, for example, aluminum nitride (AlN) or alumina (A1203) . In other embodiments, such as the embodiments described below in connection with Figures 7A through 10B, the substrate 20 may comprise a material that is both electrically and thermally conductive. In such embodiments, the metal leads, conductive traces 22 and 24, or both may be insulated from the substrate by means of an insulating film formed on portions of the substrate as described in more detail below. Dimensions of the substrate 20 can vary widely depending on application and processes used to manufacture the die package 10. For example, in the illustrated embodiment, the substrate 20 may have dimensions ranging from fractions of millimeters

(mm) to tens of millimeters. Although the present invention is not limited to particular dimensions, one specific embodiment of the die package 10 of the present invention is illustrated in Figures having the dimensions denoted therein. All dimensions shown in the Figures are in millimeters (for lengths, widths, heights, and radii) and degrees (for angles) except as otherwise designated in the Figures, in the Specification herein, or both. [0042] The substrate 20 has a top surface 21, the top surface 21 including the electrical traces 22 and 24. The traces 22 and 24 provide electrical connections from the solder pads (for example top solder pads 26) to a mounting pad 28. The top solder pads 26 may comprise portions of the traces 22 and 24 generally proximal to sides of the substrate 20. The top solder pads 26 are electrically connected to side solder pads 32. The mounting pad 28 is a portion of the top surface (including portions of the trace 22, the trace 24, or both) where the LED assembly 60 is mounted. Typically the mounting pad 28 is generally located proximal to center of the top surface 21. In alternative embodiments of the present invention, the LED assembly 60 can be replaced by other semiconductor circuits or chips.

[0043] The traces 22 and 24 provide electrical routes to allow the LED assembly 60 to electrically connect to the solder pads 26, 32, or 34. Accordingly, some of the traces are referred to as first traces 22 while other traces are referred to as second traces 24. In the illustrated embodiment, the mounting pad 28 includes portions of both the first traces 22 and the second traces 24. In the illustrated example, the LED assembly 60 is placed on the first trace 22 portion of the mounting pad 28 thereby making contact with the first trace 22. In the illustrated embodiment, top of the LED assembly 60 and the second traces 24 are connected to each other via a bond wire 62. Depending on the construction and orientation of LED assembly 60, first traces 22 may provide anode (positive) connections and second traces 24 may comprise cathode (negative) connections for the LED assembly 60 (or vice versa) .

[0044] The LED assembly 60 can include additional elements. For example, in Figures IB and 2C, the LED assembly 60 is illustrated including the LED bond wire 62, an LED subassembly 64, and a light emitting diode (LED) 66. Such LED subassembly 64 is known in the art and is illustrated for the purposes of discussing the invention and is not meant to be a limitation ' of the present invention. In the Figures, the LED assembly 60 is shown die-attached to the substrate 20. In alternative embodiments, the mounting pad 28 can be configured to allow flip-chip attachment of the LED assembly 60. Additionally, multiple LED assemblies can be mounted on the mounting pad 28. In alternative embodiments, the LED assembly 60 can be mounted over multiple traces. This is especially true if flip-chip technology is used.

[0045] The topology of the traces 22 and 24 can vary widely from the topology illustrated in the Figures while still remaining within the scope of the present invention. In the Figures, three separate cathode (negative) traces 24 are shown to illustrate that three LED assemblies can be placed on the mounting pad 28, each connected to a different cathode (negative) trace; thus, the three LED assemblies may be separately electrically controllable. The traces 22 and 24 are made of conductive material such as gold, silver, tin, or other metals. The traces 22 and 24 can have dimensions as illustrated in the Figures and having thickness in the order of microns or tens of microns depending on application. For example, the traces 22 and 24 can be 15 microns thick. Figures 1A and 2A illustrate an orientation marking 27. Such markings can be used to identify the proper orientation of the die package 10 even after assembling the die package 10. The traces 22 and 24, as illustrated, can extend from the mounting pad 28 to sides of the substrate 20.

[0046] Continuing to refer to Figures 1A through 2D, the substrate 20 defines semi-cylindrical spaces 23 and quarter-cylindrical spaces 25 proximal to its sides. In the Figures, to avoid clutter, only representative spaces 23 and 25 are indicated with reference numbers. The semi- cylindrical spaces 23 and the quarter-cylindrical spaces 25 provide spaces for solder to flow-through and solidify-in when the die package 10 is attached to a printed circuit board (PCB) or another apparatus (not shown) to which the die package 10 is a component thereof. Moreover, the semi- cylindrical spaces 23 and the quarter-cylindrical spaces 25 provide convenient delineation and break points during the manufacturing process.

[0047] The substrate 20 can be manufactured as one individual section of a strip having a plurality of adjacent sections, each section being a substrate 20. Alternatively, the substrate 20 can be manufactured as one individual section of an array of sections, the array having multiple rows and columns of adjacent sections. In such configuration, the semi-cylindrical spaces 23 and quarter-cylindrical spaces 25 can be utilized as handles for the strip or the array during the manufacturing process . [0048] Further, the semi-cylindrical spaces 23 and the quarter-cylindrical spaces 25, combined with scribed grooves or other etchings between the sections, assist in separating each individual substrate from the strip or the wafer. The separation can be accomplished by introducing physical stress to the etched lines (crossing the semi- cylindrical spaces 23 and the quarter-cylindrical spaces 25) by bending the strip or the wafer. These features simplify the manufacturing process thus reducing costs by eliminating the need for special carrier fixtures to handle the strip or the wafer during the manufacturing process. Further, the semi-cylindrical spaces 23 and the quarter- cylindrical spaces 25 may serve as via holes connecting the top solder pads 26, the side solder pads 32, and the bottom solder pads 34.

[0049] The substrate 20 has a bottom surface 29 including a thermal contact pad 36. The thermal contact pad can be fabricated using material having high heat conductivity such as gold, silver, tin, or other material including but not limited to precious metals.

[0050] Figure 3 illustrates a cut-away side view of portions of the semiconductor package of Figures 1A and IB . In particular, the Figure 3 illustrates a cut-away side view of the top heat sink 40 and the lens 50. Referring to Figures 1A, IB, and 3, the top heat sink 40 is made from material having high thermal conductivity such as aluminum, copper, ceramics, plastics, composites, or a combination of these materials. A high temperature, mechanically tough, dielectric material can be used to overcoat the traces 22 and 24 (with the exception of the central die-attach area) to seal the traces 22 and 24 and provide protection from physical and environmental harm such as scratches and oxidation. The overcoating process can be a part of the substrate manufacturing process. The overcoat, when used, also insulates the substrate 20 from the top heat sink 40. The overcoat may then covered with a high temperature adhesive such as thermal interface material manufactured by THERMOSET that bonds the substrate 20 with the top heat sink 40.

[0051] The top heat sink 40 may include a reflective surface 42 substantially surrounding the LED assembly 60 mounted on the mounting pad 28 (of Figures 2A and 2C) . The reflective surface 42 reflects portions of light from the LED assembly 60 as illustrated by sample light rays 63. Other portions of the light are not reflected by the reflective surface 42 as illustrated by sample light ray 61. Illustrative light rays 61 and 63 are not meant to represent light traces often use in the optical arts. For efficient reflection of the light, the top heat sink 40 is preferably made from material that can be polished, coined, or both. Alternatively, to achieve high reflectivity, the optical reflective surface 42 or the entire heat sink 40 can be plated or deposited with high reflective material such as silver, aluminum, or another substance that serves the purpose. For this reason, the top heat sink 40 is also referred to as a reflector plate 40. The reflector plate 40 is made of material having high thermal conductivity if and when required by the thermal performance of the package 10.

[0052] In the illustrated embodiment, the reflective surface 42 is illustrated as a flat surface at an angle, for example 45 degrees, relative to the reflective plate's horizontal plane. The present invention is not limited to the illustrated embodiment. For example, the reflective surface 42 can be at a different angle relative to the reflective plate's horizontal plane. Alternatively, the reflective plate can have a parabolic or another shape.

[0053] The reflective plate 40 includes a ledge 44 for supporting and coupling with the lens 50. The LED assembly 60 is encapsulated within the die package 10 (of Figures 1A and IB) using encapsulation material 46 such as, for example only, silicone. The encapsulation material 46 is preferably high temperature polymer with high light transmissivity and refractive index that matches refractive index of the lens 50.

[0054] The lens 50 is made from material having high light transmissivity such as, for example only, glass, quartz, high temperature plastic, or a combination of these materials. The lens 50 may be placed in contact with the encapsulation material 46. Consequently, as the die package 10 is heated and experiences thermal expansion, the lens 50 may be cushioned by the encapsulation material 46 such that the lens 50 may be protected from mechanical stresses arising from thermal expansion of other parts of the die package 10. In some embodiments, the lens 50 defines a shallow trough 52 which can be filled with optical chemicals, for example, phosphors, light diffusants such as calcium carbonate, center frequency shifting material such as fluorescent material, or a combination of these materials.

[0055] Figure 4 illustrates the die package 10 coupled to an external heat sink 70. Referring to Figure 4, the thermal contact pad 36 can be attached to the external heat sink 70 using epoxy, solder, or any other thermally conductive adhesive, electrically conductive adhesive, or thermally and electrically conductive adhesive 74. The external heat sink 70 can be a printed circuit board (PCB) or other structure that draws heat from the die package 10. The external heat sink can include circuit elements (not shown) or heat dissipation fins 72 in various configurations.

[0056] An embodiment of the invention having certain alternate configuration is shown in Figures 5 through 6D. Portions of this second embodiment are similar to corresponding portions of the first embodiment illustrated in Figures 1A through 4. For convenience, portions of the second embodiment as illustrated in Figures 5 through 6D that are similar to portions of the first embodiment are assigned the same reference numerals, analogous but changed portions are assigned the same reference numerals accompanied by letter "a," and different portions are assigned different reference numerals.

[0057] Figure 5 is an exploded perspective view of an LED die package 10a in accordance with other embodiments of the present invention. Referring to Figure 5, the light emitting die package 10a of the present invention includes a bottom heat sink (substrate) 20a, a top heat sink (reflector plate) 40a, and a lens 50.

[0058] Figures 6A, 6B, 6C, and 6D, provide, respectively, a top view, a side view a front view, and ' a bottom view of the substrate 20a of Figure 5. Referring to Figures 5 through 6D, in the illustrated embodiment, the substrate 20a includes one positive trace 22a and four negative traces 24a. These traces 22a and 24a have are configured differently than the traces 22 and 24 of Figure 2A. The substrate 20a includes flanges 31 that define latch spaces 33 for reception of legs 35 of the reflector plate 40a thereby mechanically engaging the reflector plate 40a with the substrate 20a.

[0059] Other embodiments of the invention are illustrated in Figures 7A through 10B. According to these embodiments, a substrate for a high power light emitting device includes a thermally and electrically conductive plate having first and second surfaces. The plate may comprise a metal such as copper, aluminum or alloys of either. A thin, thermally conductive insulating film is formed on the first surface of the metal plate. In some embodiments, the thermally conductive insulating film comprises a ceramic/polymer film such as the Thermal Clad film available from by The Bergquist Company of Chanhassen, MN, USA.

[0060] Conductive elements such as metal traces and/or metal leads may be formed on the ceramic/polymer film. Since the ceramic/polymer film is insulating, the conductive traces are not in electrical contact with the metal plate. A conductive element may form or be electrically connected to a mounting pad adapted to receive an electronic device. As discussed above in connection with the embodiments illustrated in Figs. 1-6, the topology of the metal traces may vary widely while still remaining within the scope of the invention.

[0061] An LED assembly may be bonded to the mounting pad for example by means of soldering, thermosonic bonding or thermocompression bonding. Heat generated by the LED may be dissipated at least in part through the metal plate. Since the substrate itself may act as a heatsink, the need for bonding an additional heatsink to the structure may be reduced or eliminated. However, an additional heatsink may be placed in thermal communication with the metal plate so that heat may be drawn away from the operating device more efficiently.

[0062] In one embodiment, one or more via holes may be formed through the insulating film and the metal plate. The via holes may be internally coated with an insulating material such as the ceramic/polymer film. Electrical conductors such as electrically conductive traces may be formed in the via and may electrically connect conductive elements on the first surface of the substrate to conductive elements on the second surface of the substrate . A substrate according to such an embodiment may be mounted on a surface such as a printed circuit board without the use of metal leads, which may result in a more mechanically robust package .

[0063] A substrate according to embodiments of the present invention may also include electronic circuitry such as a discrete zener diode and/or a resistor network for electrostatic discharge (ESD) and/or over-voltage protection.

[0064] Although not illustrated in Figs. 7-10, the substrate may further include features such as the semi-cylindrical and quarter-cylindrical spaces, orientation markings, side bond pads, flanges and other features illustrated in Figs. 1-6.

[0065] Portions of the embodiments illustrated in Figures 7A through 10B are similar to corresponding portions of the embodiments illustrated in Figures 1 through 6D. For convenience, portions of the embodiment as illustrated in Figures 7A through 10B that are similar to portions of the first embodiment are assigned the same reference numerals, analogous but changed portions are assigned the same reference numerals accompanied by letter "b," and different portions are assigned different reference numerals.

[0066] Referring now to Figure 7A, a substrate 20b according to another embodiments of the present invention is illustrated. Figures 7A and 7B provide, respectively, a top view and a front view of the substrate 20b. Further, Figure 7B also shows an LED assembly 60 in addition to the front view of the substrate 20b. The substrate 20b includes a thermally and electrically conductive plate 51 having first and second surfaces 51a and 51b. The plate 51 may comprise a metal such as copper, aluminum or alloys of either. A thin, thermally conductive insulating film 48 is formed on at least portions of the first surface 51a of the metal plate 51. In some embodiments, the thermally conductive insulating film 48 comprises a ceramic/polymer film such as the Thermal Clad film available from by The Bergquist Company of Chanhassen, MN, USA. In addition, a thermally conductive insulating film 49 may be formed on the second surface 51b of plate 51, as well as side surfaces .

[0067] The substrate 20b provides support for electrically conductive elements such as electrical traces 22 and 24; for solder pads 26 ; and for the LED assembly 60. Further, additional traces and connections can be fabricated on the top, side, or bottom of the substrate 20b, or layered within the substrate 20b. The traces 22 and 24, the solder pads 26 , and any other connections can be interconnected to each other in any combinations using known methods, for example via holes . [0068] The substrate 20b has a top surface 21b, the top surface 21b including the electrical traces 22 and 24. The traces 22 and 24 provide electrical connections from the solder pads (for example top solder pads 26) to a mounting pad 28. The top solder pads 26 may comprise portions of the traces 22 and 24 generally proximal to sides of the substrate 20b. The mounting pad 28 is a portion of the top surface (including portions of the trace 22, the trace 24, or both) where the LED assembly 60 is mounted. Typically the mounting pad 28 is generally located proximal to center of the top surface 21b. In alternative embodiments of the present invention, the LED assembly 60 can be replaced by other semiconductor circuits or chips .

[0069] The topology of the traces 22 and 24 can vary widely from the topology illustrated in the Figures while still remaining within the scope of the present invention. In the Figures, only one cathode (negative) and one anode (positive) trace is shown. However, multiple cathode or anode traces may be included on the substrate 20b to facilitate the mounting of plural LED assemblies on the mounting pad 28, each connected to a different cathode or anode trace; thus, the three LED assemblies may be separately electrically controllable. The traces 22 and 24 are made of conductive material such as gold, silver, tin, or other metals.

[0070] The substrate 20b has a bottom surface 29b including a thermal contact pad 36. The thermal contact pad can be fabricated using material having high heat conductivity such as gold, silver, tin, or other material including but not limited to precious metals. [0071] Figure 7C illustrates a cut-away front view of portions of the substrate 20b taken along section line A-A of Figure 7A. As shown in Figure 7C, one or more via holes 45a, 45b may be formed through the substrate 20b. The via holes 45a, 45b may be internally coated with an insulating material such as the ceramic/polymer film. Electrical conductors such as electrically conductive traces 47a, 47b may be formed in the via holes and may electrically connect conductive elements on the first surface of the substrate to conductive elements on the second surface of the substrate. As illustrated in Figure 7C, a conductive trace 47a in via hole 45a connects trace 24 on the first side 21b, or the top surface 21b, of the substrate 20b to solder pad 34 on the second side 29b, or the bottom surface 29b, of the substrate 20b. Likewise, a conductive trace 47b extending through via hole 45b connects conductive trace 22 to a bond pad 38.

[0072] A substrate according to such an embodiment may be mounted on a surface such as a printed circuit board without the use of metal leads, which may result in a more mechanically robust package.

[0073] As discussed above, a high temperature, mechanically tough, dielectric material can be used to overcoat the traces 22 and 24 (with the exception of the central die- attach area 28) to seal the traces 22 and 24 and provide protection from physical and environmental harm such as scratches and oxidation. The overcoating process can be a part of the substrate manufacturing process. The overcoat, when used, also insulates the traces 22 and 24 from the top heat sink 40. The overcoat may then be covered with a high temperature adhesive such as thermal interface material manufactured by THERMOSET that bonds the substrate 20b with the top heat sink 40.

[0074] Other embodiments that do not utilize via holes are illustrated in Figures 8 and 9. As illustrated in Figure 8, the conductive traces 22, 24 may form or be attached to metal leads 39, 41 which extend away from the package and which may be mounted directly to a circuit board. In such an embodiment, only the first surface 21b of the substrate 20b may include an electrically insulating, thermally conductive film 48.

[0075] Figure 9 illustrates an embodiment in which conductive traces 22, 24 extend down the sidewalls of the substrate 20b to contact bond pads 34 and 38 on the second surface of the substrate 20b. Such a configuration may permit the package to be mounted directly onto a circuit board without the use of metal leads or via holes .

[0076] As illustrated in Figures 10A and 10B, the substrate 20b may be configured to include electronic circuitry such as a discrete zener 65 diode, a resistor network 67, other electronic elements, or any combination of these. Such electronic circuitry can be connected between the traces 22 and 24 which may operate as anode /or cathode elements. The electronic circuitry can be used for various purposes, for example, to prevent electro-static discharge (ESD) , for over-voltage protection, or both. In the illustrated examples, the zener diode DI 65 connected between the trace 22 and the trace 24 as illustrated in Figure 10B may prevent an excessive reverse voltage from being applied to an optoelectronic device mounted on the substrate 20b. Similarly, the resistor network 67 such as printed resistor 67 may provide ESD protection to a device mounted on the sbustrate 20.] From the foregoing, it will be apparent that the present invention is novel and offers advantages over the current art. Although specific embodiments of the invention are described and illustrated above, the invention is not to be limited to the specific forms or arrangements of parts so described and illustrated. For example, differing configurations, sizes, or materials may be used to practice the present invention. The invention is limited by the claims that follow. In the following, claims drafted to take advantage of the "means or steps for" provision of 35 USC section 112 are identified by the phrase "means for . "

Claims

WHAT IS CLAIMED' IS:
1. A light emitting die package comprising: a substrate comprising an electrically and thermally conductive material and having a first surface; a thermally conductive, electrically insulating film covering at least a portion of said first surface; a first conductive element on said insulating film, said conductive element insulated from said substrate by said insulating film; a second conductive element on said insulating film, said second conductive element spaced apart from said first conductive element and electrically insulated from said substrate by said insulating film wherein at least one of said first and second conductive elements comprises a mounting pad for mounting a light emitting die thereon; a reflector plate coupled to said substrate and substantially surrounding the mounting pad; and a lens substantially covering the mounting pad.
2. The light emitting die package recited in claim 1 further comprising a light emitting diode (LED) mounted on said substrate and connected to the first and second conductive elements .
3. The light emitting die package recited in claim 2 wherein the LED is encapsulated within optically clear polymer.
4. The light emitting die package recited in claim 1 wherein said first and second conductive elements comprise metal traces .
5. The light emitting die package recited in claim 1 wherein said substrate comprises a metal .
6. The light emitting die package recited in claim 5, wherein said substrate comprises a metal selected from the group consisting of copper and aluminum.
7. The light emitting die package recited in claim 5, wherein said substrate comprises a copper/aluminum alloy.
8. The light emitting die package recited in claim 1 wherein said insulating film comprises a ceramic polymer film.
9. The light emitting die package recited in claim 1, wherein said substrate comprises a second surface opposite said first surface, and further comprising at least on via hole through said substrate.
10. The light emitting die package recited in claim 9, wherein the surface of said via hole is coated with an insulating film coating.
11. The light emitting die package recited in claim 10, wherein said via hole includes a conductive trace therethrough, said conductive trace is insulated from said substrate by said insulating film coating, and said conductive trace is in electrical contact with one of said first and second conductive leads.
12. The light emitting die package recited in claim 9 wherein said second surface of said substrate includes a thermally conductive insulating film on at least a portion of said second surface and wherein said package further comprises a third electrical lead on said second surface, said third electrical lead is insulated from said substrate by said thermally conductive insulating film and said third electrical lead is in electrical contact with said conductive trace through said via hole.
13. The light emitting die package recited in claim 1 further comprising an external heat sink coupled to said substrate.
14. The light emitting die package recited in claim 13 wherein said substrate has a bottom side plated with metals for coupling with said external heat sink.
15. The light emitting die package recited in claim 1 wherein at least one conductive element extends from the mounting pad to a side of said substrate.
16. The light emitting die package recited in claim 1 wherein said substrate comprises flanges along at least one side for mechanically engaging said reflector plate.
17. The light emitting die package recited in claim 1 wherein said reflector plate substantially surrounds the mounting pad.
18. The light emitting die package recited in claim 1 wherein said reflector plate defines a reflection surface.
19. The light emitting die package recited in claim 1 wherein said reflector plate comprises material having high thermal conductivity.
20. The light emitting die package recited in claim 1 wherein said reflector plate comprises at least one leg mechanically engaging said substrate for increased thermal transfer.
21. The light emitting die package recited in claim 1 wherein said lens comprises a trough adapted to receive optical chemicals .
22. The light emitting die package recited in claim 1 wherein said lens comprises frequency shifting compounds.
23. The light emitting die package recited in claim 1 wherein said lens comprises diffusant.
24. The light emitting die package recited in claim 1 wherein said lens comprises a phosphor.
25. A light emitting die package comprising: a metal substrate having a first surface; an electrically insulating film covering at least a portion of said first surface; a first conductive trace on said insulating film, said conductive trace insulated from said substrate by said insulating film; a mounting pad for mounting a light emitting device, said mounting pad electrically connected to said first conductive trace; a reflector plate coupled to said substrate and I substantially surrounding the mounting pad; and a lens substantially covering the mounting pad.
26. A light emitting die package comprising: a metal substrate having a first surface; a conductive trace on said first surface, said conductive trace insulated from said metal substrate by an insulating film; said conductive trace forming a mounting pad for mounting a light emitting device; and a metal lead electrically connected to said conductive trace and extending away from said first surface.
27. A light emitting die package comprising: a metal substrate having a first surface and a second surface opposite said first surface; a via hole through said substrate; a conductive trace extending from said first surface to said second surface, said conductive trace insulated from said metal substrate by insulating film; and a metal contact pad on one of said first and second surfaces electrically connected to said conductive trace.
PCT/US2004/034768 2002-09-04 2004-10-20 Power surface mount light emitting die package WO2005043627A1 (en)

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EP20040795871 EP1680816B1 (en) 2003-10-22 2004-10-20 Power surface mount light emitting die package
DE200460023409 DE602004023409D1 (en) 2003-10-22 2004-10-20 Housing for surface-mount light emitting chip high performance
KR20067007929A KR101244075B1 (en) 2003-10-22 2004-10-20 Power surface mount light emitting die package
KR20137009561A KR101386846B1 (en) 2003-10-22 2004-10-20 Power surface mount light emitting die package
KR20117002575A KR101160037B1 (en) 2003-10-22 2004-10-20 Power surface mount light emitting die package
CN 200480030943 CN1871710B (en) 2003-10-22 2004-10-20 Power surface mounted light emitting wafer package
JP2006536764A JP4602345B2 (en) 2003-10-22 2004-10-20 Light-emitting die package of power surface mount
KR20127027757A KR101314986B1 (en) 2003-10-22 2004-10-20 Power surface mount light emitting die package

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Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006003563A2 (en) * 2004-06-29 2006-01-12 Koninklijke Philips Electronics N.V. Light emitting diode module
WO2006135496A2 (en) * 2005-06-10 2006-12-21 Cree, Inc. Led package
JP2008085282A (en) * 2006-01-27 2008-04-10 Kyocera Corp Wiring board for light emitting element and light emitting device
JP2008258617A (en) * 2007-03-30 2008-10-23 Seoul Semiconductor Co Ltd Led package with metal pcb
JP2008544577A (en) * 2005-06-27 2008-12-04 クリー インコーポレイテッドCree Inc. Top-mount power light emitter with integral heat sink
US7479662B2 (en) 2002-08-30 2009-01-20 Lumination Llc Coated LED with improved efficiency
EP2034529A2 (en) * 2007-09-04 2009-03-11 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
EP2073280A1 (en) * 2007-12-20 2009-06-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflective secondary optics and semiconductor components
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
WO2010001309A1 (en) * 2008-07-01 2010-01-07 Koninklijke Philips Electronics N.V. Close proximity collimator for led
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
WO2011033516A1 (en) * 2009-09-20 2011-03-24 Viagan Ltd. Wafer level packaging of electronic devices
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
WO2011161183A1 (en) * 2010-06-24 2011-12-29 Osram Opto Semiconductors Gmbh Optoelectronic semi-conductor component
US8188488B2 (en) 2003-05-27 2012-05-29 Cree, Inc. Power surface mount light emitting die package
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
US8482025B2 (en) 2009-06-04 2013-07-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US9518723B2 (en) 2011-04-08 2016-12-13 Brite Shot, Inc. Lighting fixture extension
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component

Families Citing this family (282)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633120B2 (en) * 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US7692206B2 (en) * 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
US6897486B2 (en) 2002-12-06 2005-05-24 Ban P. Loh LED package die having a small footprint
JP2006525682A (en) 2003-04-30 2006-11-09 クリー インコーポレイテッドCree Inc. High power solid state light emitting device package
US8614456B2 (en) * 2003-07-11 2013-12-24 Tridonic Optoelectronics Gmbh LED and LED light source
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
FR2862424B1 (en) * 2003-11-18 2006-10-20 Valeo Electronique Sys Liaison Device for cooling an electrical component and method of manufacturing this device
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
KR100586944B1 (en) * 2003-12-26 2006-06-07 삼성전기주식회사 High power light emitting diode package and method of producing the same
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
KR100655894B1 (en) * 2004-05-06 2006-12-08 로스 군둘라 Light Emitting Device
KR100658700B1 (en) * 2004-05-13 2006-12-15 로스 군둘라 Light emitting device with RGB diodes and phosphor converter
DE102004040468A1 (en) * 2004-05-31 2005-12-22 Osram Opto Semiconductors Gmbh The optoelectronic semiconductor component and housing basic body of such a component
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7280288B2 (en) 2004-06-04 2007-10-09 Cree, Inc. Composite optical lens with an integrated reflector
KR100665298B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Light emitting device
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Luminescent material
US20050280016A1 (en) * 2004-06-17 2005-12-22 Mok Thye L PCB-based surface mount LED device with silicone-based encapsulation structure
EP1774598B1 (en) * 2004-06-30 2011-09-14 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7977686B2 (en) * 2005-06-30 2011-07-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR100604469B1 (en) * 2004-08-25 2006-07-25 박병재 light emitting device and package structure and method of manufacturing thereof
US7453092B2 (en) * 2004-08-31 2008-11-18 Toyoda Gosei Co., Ltd. Light emitting device and light emitting element having predetermined optical form
JP4254669B2 (en) * 2004-09-07 2009-04-15 豊田合成株式会社 The light-emitting device
EP1805809A1 (en) * 2004-10-22 2007-07-11 Philips Electronics N.V. Semiconductor light emitting device with improved heatsinking
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
WO2006046655A1 (en) * 2004-10-27 2006-05-04 Kyocera Corporation Light emitting element mounting board, light emitting element storing package, light emitting device and lighting equipment
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US7473933B2 (en) * 2004-10-29 2009-01-06 Ledengin, Inc. (Cayman) High power LED package with universal bonding pads and interconnect arrangement
US7670872B2 (en) * 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US7772609B2 (en) * 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US20060124953A1 (en) * 2004-12-14 2006-06-15 Negley Gerald H Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same
US7322732B2 (en) * 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
DE602005005223T2 (en) * 2005-01-12 2009-03-12 Neobulb Technologies Inc. Lighting apparatus with LEDs of the flip-chip type and methods for their preparation
US7777247B2 (en) * 2005-01-14 2010-08-17 Cree, Inc. Semiconductor light emitting device mounting substrates including a conductive lead extending therein
US7262438B2 (en) * 2005-03-08 2007-08-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED mounting having increased heat dissipation
EP1862035B1 (en) * 2005-03-14 2013-05-15 Koninklijke Philips Electronics N.V. Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same
KR100663906B1 (en) * 2005-03-14 2007-01-02 서울반도체 주식회사 Light emitting apparatus
EP1861876A1 (en) * 2005-03-24 2007-12-05 Tir Systems Ltd. Solid-state lighting device package
CA2614803C (en) * 2005-04-05 2015-08-25 Tir Technology Lp Electronic device package with an integrated evaporator
JP4595665B2 (en) * 2005-05-13 2010-12-08 富士電機システムズ株式会社 A method for manufacturing a wiring board
US20070001290A1 (en) * 2005-06-30 2007-01-04 Daw-Heng Wong Semiconductor packaging structure
KR100629521B1 (en) * 2005-07-29 2006-09-21 삼성전자주식회사 Led package structure and manufacturing method, and led array module
CN100594623C (en) * 2005-09-20 2010-03-17 松下电工株式会社 LED lighting equipment
JP2007088155A (en) * 2005-09-21 2007-04-05 Stanley Electric Co Ltd Surface-mounted led board
US20070080360A1 (en) * 2005-10-06 2007-04-12 Url Mirsky Microelectronic interconnect substrate and packaging techniques
KR101241650B1 (en) 2005-10-19 2013-03-08 엘지이노텍 주식회사 Package of light emitting diode
KR101258397B1 (en) * 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
US7786490B2 (en) * 2005-11-28 2010-08-31 Neobule Technologies, Inc. Multi-chip module single package structure for semiconductor
DE102006010729A1 (en) 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Optical component, e.g. for miniature opto-electronic semi-conductor chips, comprises a composite unit of lens and mounting part in different materials
KR101055772B1 (en) * 2005-12-15 2011-08-11 서울반도체 주식회사 The light emitting device
CN101385145B (en) 2006-01-05 2011-06-08 伊鲁米特克斯公司 Separate optical device for directing light from an LED
US7465069B2 (en) * 2006-01-13 2008-12-16 Chia-Mao Li High-power LED package structure
US7528422B2 (en) * 2006-01-20 2009-05-05 Hymite A/S Package for a light emitting element with integrated electrostatic discharge protection
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
KR100780196B1 (en) * 2006-02-27 2007-11-27 삼성전기주식회사 Light emitting diode package, substrate for light emitting diode package and method of manufacturing the same
US7737634B2 (en) * 2006-03-06 2010-06-15 Avago Technologies General Ip (Singapore) Pte. Ltd. LED devices having improved containment for liquid encapsulant
US7683396B2 (en) * 2006-03-13 2010-03-23 Industrial Technology Research Institute High power light emitting device assembly utilizing ESD protective means sandwiched between dual sub-mounts
KR100738933B1 (en) * 2006-03-17 2007-07-06 (주)대신엘이디 Led module for illumination
US7808004B2 (en) * 2006-03-17 2010-10-05 Edison Opto Corporation Light emitting diode package structure and method of manufacturing the same
EP2398050A3 (en) * 2006-03-23 2014-02-26 CeramTec GmbH Carrier body for construction elements or circuits
US8206779B2 (en) * 2006-03-24 2012-06-26 Fujifilm Corporation Method for producing laminate, polarizing plate, and image display device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 The light emitting device
JP5091421B2 (en) * 2006-04-07 2012-12-05 株式会社東芝 Semiconductor light-emitting device
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US7655957B2 (en) * 2006-04-27 2010-02-02 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same
US20070268572A1 (en) * 2006-05-20 2007-11-22 Newport Corporation Multiple emitter coupling devices and methods with beam transform system
US7830608B2 (en) * 2006-05-20 2010-11-09 Oclaro Photonics, Inc. Multiple emitter coupling devices and methods with beam transform system
WO2007139781A3 (en) * 2006-05-23 2008-05-15 Led Lighting Fixtures Inc Lighting device
JP2009538531A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Illumination device, and a method
US7989823B2 (en) * 2006-06-08 2011-08-02 Hong-Yuan Technology Co., Ltd. Light emitting system, light emitting apparatus and forming method thereof
US7680170B2 (en) * 2006-06-15 2010-03-16 Oclaro Photonics, Inc. Coupling devices and methods for stacked laser emitter arrays
US20070291373A1 (en) * 2006-06-15 2007-12-20 Newport Corporation Coupling devices and methods for laser emitters
US8610134B2 (en) * 2006-06-29 2013-12-17 Cree, Inc. LED package with flexible polyimide circuit and method of manufacturing LED package
US7906794B2 (en) * 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
US7441926B2 (en) * 2006-07-13 2008-10-28 Everlight Electronics Co., Ltd. Light emitting diode package
US7960819B2 (en) * 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
US7909482B2 (en) 2006-08-21 2011-03-22 Innotec Corporation Electrical device having boardless electrical component mounting arrangement
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
KR100828900B1 (en) 2006-09-04 2008-05-09 엘지이노텍 주식회사 Package of light emitting diode and manufacturing method thereof
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US20080074884A1 (en) * 2006-09-25 2008-03-27 Thye Linn Mok Compact high-intensty LED-based light source and method for making the same
KR100774218B1 (en) * 2006-09-28 2007-11-08 엘지이노텍 주식회사 Lens, a method for manufacturing it and light emitting device package
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US20090275157A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
US7866897B2 (en) * 2006-10-06 2011-01-11 Oclaro Photonics, Inc. Apparatus and method of coupling a fiber optic device to a laser
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
RU2453948C2 (en) * 2006-10-31 2012-06-20 Конинклейке Филипс Электроникс Н.В. Lighting device module (versions)
US20080111148A1 (en) * 2006-11-09 2008-05-15 Zimmerman Michael A Led reflective package
DE102006062066A1 (en) * 2006-12-29 2008-07-03 Osram Opto Semiconductors Gmbh Lens arrangement for light emitting diode display device, has lens with lens surface and optical axis, which penetrates lens surface of lens
US20080158886A1 (en) * 2006-12-29 2008-07-03 Siew It Pang Compact High-Intensity LED Based Light Source
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
US7922360B2 (en) * 2007-02-14 2011-04-12 Cree, Inc. Thermal transfer in solid state light emitting apparatus and methods of manufacturing
US8408773B2 (en) 2007-03-19 2013-04-02 Innotec Corporation Light for vehicles
US7712933B2 (en) 2007-03-19 2010-05-11 Interlum, Llc Light for vehicles
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
US8304660B2 (en) * 2008-02-07 2012-11-06 National Taiwan University Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
CN102638943B (en) * 2007-05-25 2016-12-28 莫列斯公司 Means for heating the heat sink and the power source
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US20090008662A1 (en) * 2007-07-05 2009-01-08 Ian Ashdown Lighting device package
US20090008670A1 (en) * 2007-07-06 2009-01-08 Topco Technologies Corp. LED packaging structure with aluminum board and an LED lamp with said LED packaging structure
US20090008671A1 (en) * 2007-07-06 2009-01-08 Lustrous Technology Ltd. LED packaging structure with aluminum board and an LED lamp with said LED packaging structure
CN101345279B (en) * 2007-07-12 2011-03-16 奇力光电科技股份有限公司 Back pin design light emitting diode device, backlight module and liquid crystal display
CN201228949Y (en) * 2007-07-18 2009-04-29 凯 胡 LED lamp heat radiation body
WO2009025469A3 (en) 2007-08-22 2009-04-16 Seoul Semiconductor Co Ltd Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Nonstoichiometric tetragonal light-emitting device employing an alkaline earth silicate phosphor
CN101388161A (en) * 2007-09-14 2009-03-18 科锐香港有限公司 LED surface mounting device and LED display with the device
CN101803049B (en) * 2007-09-20 2012-02-08 皇家飞利浦电子股份有限公司 Led packages, led package using a lamp and a method for manufacturing a package led
US9666762B2 (en) 2007-10-31 2017-05-30 Cree, Inc. Multi-chip light emitter packages and related methods
US9172012B2 (en) * 2007-10-31 2015-10-27 Cree, Inc. Multi-chip light emitter packages and related methods
US9082921B2 (en) 2007-10-31 2015-07-14 Cree, Inc. Multi-die LED package
US20120187862A1 (en) * 2007-10-31 2012-07-26 Jeffrey Carl Britt Light emitting die (led) packages and related methods
US8866169B2 (en) * 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
EP2232592B1 (en) 2007-12-12 2013-07-17 Innotec Corporation Method for overmolding a circuit board
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP2011507280A (en) * 2007-12-17 2011-03-03 オクラロ フォトニクス,インク.Oclaro Photonics,Inc. Laser emitter module and a method for constructing
US20090159125A1 (en) * 2007-12-21 2009-06-25 Eric Prather Solar cell package for solar concentrator
KR20090072941A (en) * 2007-12-28 2009-07-02 삼성전기주식회사 High Power LED Package and Fabricating Method thereof
KR20100122485A (en) 2008-02-08 2010-11-22 일루미텍스, 인크. System and method for emitter layer shaping
KR100998009B1 (en) 2008-03-12 2010-12-03 삼성엘이디 주식회사 Light emitting diode package and method of manufacturing the same
WO2009137703A3 (en) 2008-05-08 2010-02-11 Newport Corporation High brightness diode output methods and devices
JP5320560B2 (en) 2008-05-20 2013-10-23 東芝ライテック株式会社 A light source unit and an illumination device
US7876593B2 (en) * 2008-06-18 2011-01-25 Harvatek Corporation LED chip package structure with an embedded ESD function and method for manufacturing the same
JP5359045B2 (en) * 2008-06-18 2013-12-04 日亜化学工業株式会社 Semiconductor device and manufacturing method thereof
US7851818B2 (en) * 2008-06-27 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication of compact opto-electronic component packages
GB0815052D0 (en) * 2008-08-18 2008-09-24 Sensitive Electronic Co Ltd Light emitting diode lamp
JP2010067902A (en) * 2008-09-12 2010-03-25 Toshiba Corp Light-emitting device
US9252336B2 (en) * 2008-09-26 2016-02-02 Bridgelux, Inc. Multi-cup LED assembly
US7887384B2 (en) * 2008-09-26 2011-02-15 Bridgelux, Inc. Transparent ring LED assembly
US8049236B2 (en) * 2008-09-26 2011-11-01 Bridgelux, Inc. Non-global solder mask LED assembly
US20100078661A1 (en) * 2008-09-26 2010-04-01 Wei Shi Machined surface led assembly
US8058664B2 (en) 2008-09-26 2011-11-15 Bridgelux, Inc. Transparent solder mask LED assembly
US20100090239A1 (en) * 2008-10-13 2010-04-15 Advanced Optoelectronic Technology Inc. Ceramic package structure of high power light emitting diode and manufacturing method thereof
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
KR101659505B1 (en) * 2008-11-18 2016-09-23 코닌클리케 필립스 엔.브이. Electric lamps
KR101041018B1 (en) * 2008-11-21 2011-06-16 고견채 Monolithic LED lamp of reflector and lens
CN101740675B (en) 2008-11-25 2012-02-29 亿光电子工业股份有限公司 Circuit board of light-emitting diode
EP2192614A3 (en) * 2008-11-28 2012-05-30 Toshiba Lighting & Technology Corporation Electronic component mounting module and electrical apparatus
US20100142198A1 (en) * 2008-12-09 2010-06-10 Chih-Wen Yang Configurable Light Emitting System
US8115217B2 (en) 2008-12-11 2012-02-14 Illumitex, Inc. Systems and methods for packaging light-emitting diode devices
US20100149771A1 (en) 2008-12-16 2010-06-17 Cree, Inc. Methods and Apparatus for Flexible Mounting of Light Emitting Devices
CN101761795B (en) * 2008-12-23 2011-12-28 富准精密工业(深圳)有限公司 LED lighting device and packaging method
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
US8598602B2 (en) * 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US20110037083A1 (en) * 2009-01-14 2011-02-17 Alex Chi Keung Chan Led package with contrasting face
US8269248B2 (en) * 2009-03-02 2012-09-18 Thompson Joseph B Light emitting assemblies and portions thereof
CN102388473A (en) * 2009-03-24 2012-03-21 金江 Light-emitting diode package
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
CN101894901B (en) 2009-04-08 2013-11-20 硅谷光擎 Package for multiple light emitting diodes
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8957435B2 (en) * 2009-04-28 2015-02-17 Cree, Inc. Lighting device
US8106569B2 (en) * 2009-05-12 2012-01-31 Remphos Technologies Llc LED retrofit for miniature bulbs
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8860043B2 (en) * 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
US8262254B2 (en) * 2009-06-09 2012-09-11 Advanced Connectek Inc. Carrier structure for mounting LED chips
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
JP2011009519A (en) * 2009-06-26 2011-01-13 Hitachi Chem Co Ltd Optical semiconductor device and method for manufacturing the optical semiconductor device
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
KR101055762B1 (en) * 2009-09-01 2011-08-11 서울반도체 주식회사 The light emitting device employing a light-emitting substance having a oxy-orthosilicate illuminants
US8410371B2 (en) * 2009-09-08 2013-04-02 Cree, Inc. Electronic device submounts with thermally conductive vias and light emitting devices including the same
KR101075774B1 (en) * 2009-10-29 2011-10-26 삼성전기주식회사 Luminous element package and method for manufacturing the same
US7893445B2 (en) * 2009-11-09 2011-02-22 Cree, Inc. Solid state emitter package including red and blue emitters
US8476645B2 (en) 2009-11-13 2013-07-02 Uni-Light Llc LED thermal management
US20110116262A1 (en) * 2009-11-13 2011-05-19 Phoseon Technology, Inc. Economical partially collimating reflective micro optical array
KR101163850B1 (en) * 2009-11-23 2012-07-09 엘지이노텍 주식회사 Light emitting device package
US20110121347A1 (en) * 2009-11-24 2011-05-26 Luminus Devices, Inc. Systems and methods for managing heat from an led
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
WO2011091170A3 (en) 2010-01-22 2011-12-01 Oclaro Photonics, Inc. Homogenization of far field fiber coupled radiation
US8350370B2 (en) 2010-01-29 2013-01-08 Cree Huizhou Opto Limited Wide angle oval light emitting diode package
US8362515B2 (en) * 2010-04-07 2013-01-29 Chia-Ming Cheng Chip package and method for forming the same
CN102834942B (en) * 2010-04-09 2016-04-13 罗姆股份有限公司 Led module
US8901583B2 (en) 2010-04-12 2014-12-02 Cree Huizhou Opto Limited Surface mount device thin package
US9240526B2 (en) 2010-04-23 2016-01-19 Cree, Inc. Solid state light emitting diode packages with leadframes and ceramic material
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR20170110730A (en) 2010-06-11 2017-10-11 가부시키가이샤 리코 Apparatus and method for preventing an information storage device from falling from a removable device
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
US9831393B2 (en) * 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US20120074432A1 (en) * 2010-09-29 2012-03-29 Amtran Technology Co., Ltd Led package module and manufacturing method thereof
CN102456803A (en) * 2010-10-20 2012-05-16 展晶科技(深圳)有限公司 Packaging structure of light emitting diode
US20120104426A1 (en) * 2010-11-03 2012-05-03 Cree Hong Kong, Ltd. White ceramic led package
US8564000B2 (en) 2010-11-22 2013-10-22 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US8624271B2 (en) 2010-11-22 2014-01-07 Cree, Inc. Light emitting devices
US9000470B2 (en) 2010-11-22 2015-04-07 Cree, Inc. Light emitter devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US8729589B2 (en) 2011-02-16 2014-05-20 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
US9822951B2 (en) 2010-12-06 2017-11-21 Cree, Inc. LED retrofit lens for fluorescent tube
CN102142508A (en) * 2010-12-16 2011-08-03 西安炬光科技有限公司 Encapsulation structure and encapsulation method for high-power and high-brightness LED light source
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8644357B2 (en) 2011-01-11 2014-02-04 Ii-Vi Incorporated High reliability laser emitter modules
US9859471B2 (en) 2011-01-31 2018-01-02 Cree, Inc. High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
US8618660B2 (en) * 2011-03-31 2013-12-31 Novatek Microelectronics Corp. Integrated circuit device
RU2013148615A (en) * 2011-04-04 2015-05-10 Керамтек Гмбх Ceramic circuit board with an aluminum heatsink
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
CN102769089B (en) * 2011-05-06 2015-01-07 展晶科技(深圳)有限公司 The semiconductor package structure
DE102011101052A1 (en) * 2011-05-09 2012-11-15 Heraeus Materials Technology Gmbh & Co. Kg Substrate with an electrically neutral area
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
JP5968674B2 (en) * 2011-05-13 2016-08-10 エルジー イノテック カンパニー リミテッド The light emitting device package and the ultraviolet lamp with the same
KR101082587B1 (en) * 2011-07-07 2011-11-17 주식회사지엘에스 Illuminator using led
US8992045B2 (en) * 2011-07-22 2015-03-31 Guardian Industries Corp. LED lighting systems and/or methods of making the same
US20130043016A1 (en) * 2011-08-19 2013-02-21 Subtron Technology Co., Ltd. Structure and process of heat dissipation substrate
JPWO2013027413A1 (en) * 2011-08-25 2015-03-05 パナソニック株式会社 Protection element and a light-emitting device using the same
KR101817807B1 (en) 2011-09-20 2018-01-11 엘지이노텍 주식회사 Light emitting device package and lighting system including the same
USD702653S1 (en) 2011-10-26 2014-04-15 Cree, Inc. Light emitting device component
US20130120986A1 (en) 2011-11-12 2013-05-16 Raydex Technology, Inc. High efficiency directional light source with concentrated light output
US20130119417A1 (en) * 2011-11-15 2013-05-16 Peter Scott Andrews Light emitting diode (led) packages and related methods
KR101197092B1 (en) * 2011-11-24 2012-11-07 삼성전자주식회사 Light emitting diode package and method for producting the light emitting diode package
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US20130141920A1 (en) * 2011-12-06 2013-06-06 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
JP6107060B2 (en) 2011-12-26 2017-04-05 日亜化学工業株式会社 Method for manufacturing a light emitting device
CN103227274B (en) * 2012-01-31 2015-09-16 长春藤控股有限公司 LED package wafer and a manufacturing method
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
WO2013142580A1 (en) * 2012-03-20 2013-09-26 Applied Nanotech Holdings, Inc. Application of dielectric layer and circuit traces on heat sink
FR2988910B1 (en) * 2012-03-28 2014-12-26 Commissariat Energie Atomique Component LED low-rth with electrical paths and thermal dissociated
US9188290B2 (en) 2012-04-10 2015-11-17 Cree, Inc. Indirect linear fixture
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US9022631B2 (en) 2012-06-13 2015-05-05 Innotec Corp. Flexible light pipe
CN103515520B (en) * 2012-06-29 2016-03-23 展晶科技(深圳)有限公司 LED package and a manufacturing method
FI125565B (en) * 2012-09-08 2015-11-30 Lumichip Ltd The LED chip-on-board component and -valaistusmoduuli
KR20140034496A (en) 2012-09-12 2014-03-20 삼성전자주식회사 Light emitting device package and method of manufacturing the same
CN103682060B (en) * 2012-09-14 2016-09-21 展晶科技(深圳)有限公司 LED light source device
US9441818B2 (en) 2012-11-08 2016-09-13 Cree, Inc. Uplight with suspended fixture
US9494304B2 (en) 2012-11-08 2016-11-15 Cree, Inc. Recessed light fixture retrofit kit
US9482396B2 (en) 2012-11-08 2016-11-01 Cree, Inc. Integrated linear light engine
DE102012110774A1 (en) * 2012-11-09 2014-05-15 Osram Opto Semiconductors Gmbh The optoelectronic semiconductor component
US8958448B2 (en) 2013-02-04 2015-02-17 Microsoft Corporation Thermal management in laser diode device
USD738026S1 (en) 2013-03-14 2015-09-01 Cree, Inc. Linear wrap light fixture
US9874333B2 (en) 2013-03-14 2018-01-23 Cree, Inc. Surface ambient wrap light fixture
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
US9215792B2 (en) * 2013-03-15 2015-12-15 Cree, Inc. Connector devices, systems, and related methods for light emitter components
USD733952S1 (en) 2013-03-15 2015-07-07 Cree, Inc. Indirect linear fixture
CN203082646U (en) * 2013-03-20 2013-07-24 厦门海莱照明有限公司 Integral forming aluminium demoulding heat dissipation device and light-emitting diode (LED) spotlight structure
DE102013103760A1 (en) 2013-04-15 2014-10-16 Osram Opto Semiconductors Gmbh The optoelectronic component
USD735683S1 (en) 2013-05-03 2015-08-04 Cree, Inc. LED package
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
CN104235754A (en) * 2013-06-20 2014-12-24 欧司朗有限公司 Lens for illuminating device and illuminating device comprising lenses
USD740453S1 (en) 2013-06-27 2015-10-06 Cree, Inc. Light emitter unit
USD739565S1 (en) 2013-06-27 2015-09-22 Cree, Inc. Light emitter unit
US9461024B2 (en) 2013-08-01 2016-10-04 Cree, Inc. Light emitter devices and methods for light emitting diode (LED) chips
USD758976S1 (en) 2013-08-08 2016-06-14 Cree, Inc. LED package
US9644495B2 (en) 2013-08-20 2017-05-09 Honeywell International Inc. Thermal isolating service tubes and assemblies thereof for gas turbine engines
USD750308S1 (en) 2013-12-16 2016-02-23 Cree, Inc. Linear shelf light fixture
KR20150086913A (en) * 2014-01-21 2015-07-29 삼성전자주식회사 Manufacturing Method of Semiconductor Light Emitting Devices
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
US9456201B2 (en) 2014-02-10 2016-09-27 Microsoft Technology Licensing, Llc VCSEL array for a depth camera
DE102014204116A1 (en) * 2014-03-06 2015-09-10 Osram Gmbh LED module with substrate body
USD757324S1 (en) 2014-04-14 2016-05-24 Cree, Inc. Linear shelf light fixture with reflectors
CN103887420A (en) * 2014-04-18 2014-06-25 苏州东山精密制造股份有限公司 LED packaging structure and LED manufacturing method
US9577406B2 (en) 2014-06-27 2017-02-21 Microsoft Technology Licensing, Llc Edge-emitting laser diode package comprising heat spreader
KR20160023975A (en) * 2014-08-21 2016-03-04 삼성전자주식회사 A semiconductor package
USD790486S1 (en) 2014-09-30 2017-06-27 Cree, Inc. LED package with truncated encapsulant
US9379298B2 (en) * 2014-10-03 2016-06-28 Henkel IP & Holding GmbH Laminate sub-mounts for LED surface mount package
JP2016100475A (en) * 2014-11-21 2016-05-30 富士電機株式会社 Semiconductor device
CN107004677A (en) 2014-11-26 2017-08-01 硅谷光擎 Compact emitter for warm dimming and color tunable lamp
EP3238278A1 (en) * 2014-12-22 2017-11-01 MAG Instrument, Inc. Improved efficiency lighting apparatus with led directly mounted to a heatsink
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
USD777122S1 (en) 2015-02-27 2017-01-24 Cree, Inc. LED package
JP2016207739A (en) * 2015-04-17 2016-12-08 株式会社東芝 Semiconductor light emitting device and manufacturing method of the same
USD783547S1 (en) 2015-06-04 2017-04-11 Cree, Inc. LED package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785418A (en) * 1996-06-27 1998-07-28 Hochstein; Peter A. Thermally protected LED array
US5907151A (en) * 1996-05-24 1999-05-25 Siemens Aktiengesellschaft Surface mountable optoelectronic transducer and method for its production
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
JPS48102585A (en) * 1972-04-04 1973-12-22
US3760237A (en) * 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
JPS5353983U (en) * 1976-10-12 1978-05-09
JPS5936837B2 (en) 1977-04-05 1984-09-06 Tokyo Shibaura Electric Co
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
EP0105967B1 (en) * 1982-10-19 1986-06-11 KOHLENSÄURE-WERKE RUD. BUSE GMBH & CO. Method and apparatus for the investigation of the structure and permeability of soil and rock formations
US4603496A (en) * 1985-02-04 1986-08-05 Adaptive Micro Systems, Inc. Electronic display with lens matrix
KR910007381B1 (en) * 1987-08-26 1991-09-25 유에 웬 쳉 Led display device
USRE37707E1 (en) * 1990-02-22 2002-05-21 Stmicroelectronics S.R.L. Leadframe with heat dissipator connected to S-shaped fingers
US5119174A (en) * 1990-10-26 1992-06-02 Chen Der Jong Light emitting diode display with PCB base
US5173839A (en) * 1990-12-10 1992-12-22 Grumman Aerospace Corporation Heat-dissipating method and device for led display
JPH06247648A (en) 1993-02-04 1994-09-06 Inventio Ag Indicating element for elevator
JP3420612B2 (en) * 1993-06-25 2003-06-30 株式会社東芝 Led lamp
US5789772A (en) * 1994-07-15 1998-08-04 The Whitaker Corporation Semi-insulating surface light emitting devices
US5506929A (en) 1994-10-19 1996-04-09 Clio Technologies, Inc. Light expanding system for producing a linear or planar light beam from a point-like light source
US5649757A (en) 1994-11-04 1997-07-22 Aleman; Thomas M. Aquarium background illuminator
JPH0983018A (en) * 1995-09-11 1997-03-28 Nippon Denyo Kk Light emitting diode unit
US5849396A (en) * 1995-09-13 1998-12-15 Hughes Electronics Corporation Multilayer electronic structure and its preparation
JP3393247B2 (en) 1995-09-29 2003-04-07 ソニー株式会社 Optical device and manufacturing method thereof
US5633963A (en) 1995-12-12 1997-05-27 Raytheon Company Optical rotary joint for single and multimode fibers
CN100424902C (en) * 1996-07-29 2008-10-08 日亚化学工业株式会社 A planar light source
US5857767A (en) * 1996-09-23 1999-01-12 Relume Corporation Thermal management system for L.E.D. arrays
JPH1098215A (en) 1996-09-24 1998-04-14 Toyoda Gosei Co Ltd Light-emitting diode device
US6582103B1 (en) 1996-12-12 2003-06-24 Teledyne Lighting And Display Products, Inc. Lighting apparatus
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
JP3882266B2 (en) * 1997-05-19 2007-02-14 日亜化学工業株式会社 Semiconductor device
US6238599B1 (en) * 1997-06-18 2001-05-29 International Business Machines Corporation High conductivity, high strength, lead-free, low cost, electrically conducting materials and applications
US5982090A (en) 1997-07-11 1999-11-09 Kaiser Aerospace And Electronics Coporation Integrated dual mode flat backlight
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
US5869883A (en) * 1997-09-26 1999-02-09 Stanley Wang, President Pantronix Corp. Packaging of semiconductor circuit in pre-molded plastic package
DE69841798D1 (en) 1997-11-25 2010-09-16 Panasonic Elec Works Co Ltd Light with light emitting diodes
JPH11163419A (en) 1997-11-26 1999-06-18 Rohm Co Ltd Light-emitting device
DE19755734A1 (en) 1997-12-15 1999-06-24 Siemens Ag A method for producing a surface-mountable optoelectronic component
US6469322B1 (en) * 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
US6525386B1 (en) * 1998-03-10 2003-02-25 Masimo Corporation Non-protruding optoelectronic lens
US5903052A (en) 1998-05-12 1999-05-11 Industrial Technology Research Institute Structure for semiconductor package for improving the efficiency of spreading heat
JP2000049184A (en) * 1998-05-27 2000-02-18 Hitachi Ltd Semiconductor device and production thereof
JP3334618B2 (en) * 1998-06-16 2002-10-15 住友電装株式会社 Electrical junction box
JP2000037901A (en) * 1998-07-21 2000-02-08 Sanyo Electric Co Ltd Print head
JP2000101149A (en) 1998-09-25 2000-04-07 Rohm Co Ltd Semiconductor light emitting element
JP3871820B2 (en) * 1998-10-23 2007-01-24 ローム株式会社 Semiconductor light-emitting element
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP2000208822A (en) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
JP2000236116A (en) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd Light source equipment
JP3553405B2 (en) * 1999-03-03 2004-08-11 ローム株式会社 Chip-type electronic component
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US6521916B2 (en) 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
JP2000269551A (en) 1999-03-18 2000-09-29 Rohm Co Ltd Chip-type light emitting device
US6457645B1 (en) * 1999-04-13 2002-10-01 Hewlett-Packard Company Optical assembly having lens offset from optical axis
DE19918370B4 (en) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED white light source with lens
EP1059668A3 (en) 1999-06-09 2007-07-18 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
US6489637B1 (en) 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP3656715B2 (en) * 1999-07-23 2005-06-08 松下電工株式会社 The light source device
KR100335480B1 (en) * 1999-08-24 2002-05-04 김덕중 Leadframe using chip pad as heat spreading path and semiconductor package thereof
JP2001068742A (en) * 1999-08-25 2001-03-16 Sanyo Electric Co Ltd Hybrid integrated circuit device
US6362964B1 (en) * 1999-11-17 2002-03-26 International Rectifier Corp. Flexible power assembly
US6559525B2 (en) * 2000-01-13 2003-05-06 Siliconware Precision Industries Co., Ltd. Semiconductor package having heat sink at the outer surface
US6456766B1 (en) * 2000-02-01 2002-09-24 Cornell Research Foundation Inc. Optoelectronic packaging
JP4944301B2 (en) * 2000-02-01 2012-05-30 パナソニック株式会社 Optoelectronic device and manufacturing method thereof
US6492725B1 (en) * 2000-02-04 2002-12-10 Lumileds Lighting, U.S., Llc Concentrically leaded power semiconductor device package
WO2001059851A1 (en) 2000-02-09 2001-08-16 Nippon Leiz Corporation Light source
US6318886B1 (en) 2000-02-11 2001-11-20 Whelen Engineering Company High flux led assembly
US6874910B2 (en) 2001-04-12 2005-04-05 Matsushita Electric Works, Ltd. Light source device using LED, and method of producing same
US7129638B2 (en) 2000-08-09 2006-10-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
US6490104B1 (en) 2000-09-15 2002-12-03 Three-Five Systems, Inc. Illumination system for a micro display
JP2002103977A (en) 2000-09-29 2002-04-09 Johnan Seisakusho Co Ltd Sunroof device for vehicle
US6552368B2 (en) 2000-09-29 2003-04-22 Omron Corporation Light emission device
EP1247044A1 (en) 2000-10-25 2002-10-09 Lumileds Lighting B.V. Illumination system and display device
US6768525B2 (en) 2000-12-01 2004-07-27 Lumileds Lighting U.S. Llc Color isolated backlight for an LCD
ES2437131T3 (en) 2000-12-28 2014-01-09 Leuchtstoffwerk Breitungen Gmbh Light source to generate white light
US6468321B2 (en) 2001-01-10 2002-10-22 John W. Kinsel Blade and skirt assembly for directional gas cleaning and drying system
EP2043168B1 (en) 2001-01-24 2013-09-18 Nichia Corporation Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
DE10105802A1 (en) * 2001-02-07 2002-08-08 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Reflector-prone semiconductor device
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
US6844903B2 (en) 2001-04-04 2005-01-18 Lumileds Lighting U.S., Llc Blue backlight and phosphor layer for a color LCD
JP2002319711A (en) 2001-04-20 2002-10-31 Citizen Electronics Co Ltd Surface mounting type light-emitting diode and method for manufacturing the same
US6429513B1 (en) * 2001-05-25 2002-08-06 Amkor Technology, Inc. Active heat sink for cooling a semiconductor chip
USD465207S1 (en) * 2001-06-08 2002-11-05 Gem Services, Inc. Leadframe matrix for a surface mount package
US6670648B2 (en) 2001-07-19 2003-12-30 Rohm Co., Ltd. Semiconductor light-emitting device having a reflective case
EP1418628B1 (en) 2001-07-26 2013-05-22 Panasonic Corporation Light emitting device using led
JP2003110146A (en) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd Light-emitting device
US6444498B1 (en) * 2001-08-08 2002-09-03 Siliconware Precision Industries Co., Ltd Method of making semiconductor package with heat spreader
WO2003016782A1 (en) 2001-08-09 2003-02-27 Matsushita Electric Industrial Co., Ltd. Led illuminator and card type led illuminating light source
JP3989794B2 (en) * 2001-08-09 2007-10-10 松下電器産業株式会社 Led lighting device and led lighting source
JP4045781B2 (en) 2001-08-28 2008-02-13 松下電工株式会社 The light-emitting device
US20030058650A1 (en) 2001-09-25 2003-03-27 Kelvin Shih Light emitting diode with integrated heat dissipater
JP2003100986A (en) 2001-09-26 2003-04-04 Toshiba Corp Semiconductor device
JP3948650B2 (en) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド Light emitting diode and a manufacturing method thereof
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US6501103B1 (en) * 2001-10-23 2002-12-31 Lite-On Electronics, Inc. Light emitting diode assembly with low thermal resistance
KR100439402B1 (en) * 2001-12-24 2004-07-09 삼성전기주식회사 Light emission diode package
US6480389B1 (en) * 2002-01-04 2002-11-12 Opto Tech Corporation Heat dissipation structure for solid-state light emitting device package
US20040004435A1 (en) 2002-01-29 2004-01-08 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP4211359B2 (en) 2002-03-06 2009-01-21 日亜化学工業株式会社 A method of manufacturing a semiconductor device
JP4172196B2 (en) 2002-04-05 2008-10-29 豊田合成株式会社 Light emitting diode
JP2003309292A (en) * 2002-04-15 2003-10-31 Citizen Electronics Co Ltd Metal core substrate of surface mounting light emitting diode and its manufacturing method
US7122884B2 (en) 2002-04-16 2006-10-17 Fairchild Semiconductor Corporation Robust leaded molded packages and methods for forming the same
EP1508157B1 (en) 2002-05-08 2011-11-23 Phoseon Technology, Inc. High efficiency solid-state light source and methods of use and manufacture
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7264378B2 (en) 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US6897486B2 (en) 2002-12-06 2005-05-24 Ban P. Loh LED package die having a small footprint
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
JP2006519500A (en) 2003-02-26 2006-08-24 クリー インコーポレイテッドCree Inc. Synthesis white light source and a method of manufacturing the same
US6864567B2 (en) 2003-03-06 2005-03-08 San-Hua Yu Base of LED
US6789921B1 (en) 2003-03-25 2004-09-14 Rockwell Collins Method and apparatus for backlighting a dual mode liquid crystal display
US7002727B2 (en) 2003-03-31 2006-02-21 Reflectivity, Inc. Optical materials in packaging micromirror devices
US6903380B2 (en) 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
US20050001433A1 (en) 2003-04-30 2005-01-06 Seelink Technology Corporation Display system having uniform luminosity and wind generator
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US7164197B2 (en) 2003-06-19 2007-01-16 3M Innovative Properties Company Dielectric composite material
JP4360858B2 (en) 2003-07-29 2009-11-11 シチズン電子株式会社 Surface mounted led and light emitting device using the same
US7102177B2 (en) 2003-08-26 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light-emitting diode incorporating gradient index element
FR2859202B1 (en) 2003-08-29 2005-10-14 Commissariat Energie Atomique Compose scavenger of hydrogen, method for making and uses
WO2005071039A1 (en) 2004-01-26 2005-08-04 Kyocera Corporation Wavelength converter, light-emitting device, wavelength converter manufacturing method, and light-emitting device manufacturing method
US7044620B2 (en) 2004-04-30 2006-05-16 Guide Corporation LED assembly with reverse circuit board
US7997771B2 (en) 2004-06-01 2011-08-16 3M Innovative Properties Company LED array systems
US7280288B2 (en) 2004-06-04 2007-10-09 Cree, Inc. Composite optical lens with an integrated reflector
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7204631B2 (en) 2004-06-30 2007-04-17 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US7118262B2 (en) 2004-07-23 2006-10-10 Cree, Inc. Reflective optical elements for semiconductor light emitting devices
WO2006044902A3 (en) 2004-10-18 2006-06-29 Bwt Property Inc A solid-state lighting apparatus for navigational aids
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US20060098441A1 (en) 2004-11-05 2006-05-11 Au Optronics Corp. Backlight module
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
KR101115800B1 (en) 2004-12-27 2012-03-08 엘지디스플레이 주식회사 Light-emitting device package, method for fabricating the same and backlight unit
US20060215075A1 (en) 2005-03-23 2006-09-28 Chi-Jen Huang Backlight Module of LCD Device
JPWO2006112039A1 (en) 2005-04-01 2008-11-27 松下電器産業株式会社 Surface-mounted type optical semiconductor device and a manufacturing method thereof
US7297380B2 (en) 2005-05-20 2007-11-20 General Electric Company Light-diffusing films, backlight display devices comprising the light-diffusing films, and methods of making the same
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
US20060292747A1 (en) 2005-06-27 2006-12-28 Loh Ban P Top-surface-mount power light emitter with integral heat sink
US20070054149A1 (en) 2005-08-23 2007-03-08 Chi-Ming Cheng Substrate assembly of a display device and method of manufacturing the same
US7735543B2 (en) 2006-07-25 2010-06-15 Metal Casting Technology, Inc. Method of compacting support particulates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907151A (en) * 1996-05-24 1999-05-25 Siemens Aktiengesellschaft Surface mountable optoelectronic transducer and method for its production
US5785418A (en) * 1996-06-27 1998-07-28 Hochstein; Peter A. Thermally protected LED array
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1680816A1 *

Cited By (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479662B2 (en) 2002-08-30 2009-01-20 Lumination Llc Coated LED with improved efficiency
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US8188488B2 (en) 2003-05-27 2012-05-29 Cree, Inc. Power surface mount light emitting die package
WO2006003563A2 (en) * 2004-06-29 2006-01-12 Koninklijke Philips Electronics N.V. Light emitting diode module
WO2006003563A3 (en) * 2004-06-29 2006-03-30 Koninkl Philips Electronics Nv Light emitting diode module
US8217412B2 (en) 2005-01-10 2012-07-10 Cree, Inc. Solid state lighting component
US9076940B2 (en) 2005-01-10 2015-07-07 Cree, Inc. Solid state lighting component
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US8698171B2 (en) 2005-01-10 2014-04-15 Cree, Inc. Solid state lighting component
WO2006135496A3 (en) * 2005-06-10 2007-04-26 Cree Inc Led package
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
WO2006135496A2 (en) * 2005-06-10 2006-12-21 Cree, Inc. Led package
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
JP2008544577A (en) * 2005-06-27 2008-12-04 クリー インコーポレイテッドCree Inc. Top-mount power light emitter with integral heat sink
JP2008085282A (en) * 2006-01-27 2008-04-10 Kyocera Corp Wiring board for light emitting element and light emitting device
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
US8362605B2 (en) 2006-04-26 2013-01-29 Cree Huizhou Opto Limited Apparatus and method for use in mounting electronic elements
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP2008258617A (en) * 2007-03-30 2008-10-23 Seoul Semiconductor Co Ltd Led package with metal pcb
US8120054B2 (en) 2007-09-04 2012-02-21 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
EP2034529A3 (en) * 2007-09-04 2011-11-02 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
US8860068B2 (en) 2007-09-04 2014-10-14 Seoul Semiconductor Co. Ltd. Light emitting diode package having heat dissipating slugs and wall
US9412924B2 (en) 2007-09-04 2016-08-09 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
EP2034529A2 (en) * 2007-09-04 2009-03-11 Seoul Semiconductor Co., Ltd. Light emitting diode package having heat dissipating slugs
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
USD662902S1 (en) 2007-12-14 2012-07-03 Cree Hong Kong Limited LED package
EP2073280A1 (en) * 2007-12-20 2009-06-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflective secondary optics and semiconductor components
KR101419849B1 (en) 2007-12-20 2014-07-17 프라운호퍼-게젤샤프트 추르 푀르데룽 데어 안제반텐 포르슝 에 파우 Reflective secondary lens system and semiconductor assembly and also method for production thereof
WO2009080354A1 (en) * 2007-12-20 2009-07-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflective secondary optics and semiconductor assembly and method for the production thereof
US9000548B2 (en) 2007-12-20 2015-04-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Reflective secondary lens system and semiconductor assembly and also method for the production thereof
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
USD671661S1 (en) 2008-01-10 2012-11-27 Cree Hong Kong Limited LED package
USD656906S1 (en) 2008-01-10 2012-04-03 Cree Hong Kong Limited LED package
US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
CN102084508B (en) * 2008-07-01 2016-01-20 皇家飞利浦电子股份有限公司 Led for close proximity collimator
WO2010001309A1 (en) * 2008-07-01 2010-01-07 Koninklijke Philips Electronics N.V. Close proximity collimator for led
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
US8482025B2 (en) 2009-06-04 2013-07-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
WO2011033516A1 (en) * 2009-09-20 2011-03-24 Viagan Ltd. Wafer level packaging of electronic devices
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
WO2011161183A1 (en) * 2010-06-24 2011-12-29 Osram Opto Semiconductors Gmbh Optoelectronic semi-conductor component
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
US9518723B2 (en) 2011-04-08 2016-12-13 Brite Shot, Inc. Lighting fixture extension
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate

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US7244965B2 (en) 2007-07-17 grant

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