WO2005029657A1 - Module pile solaire et elements constituants - Google Patents

Module pile solaire et elements constituants Download PDF

Info

Publication number
WO2005029657A1
WO2005029657A1 PCT/JP2004/013772 JP2004013772W WO2005029657A1 WO 2005029657 A1 WO2005029657 A1 WO 2005029657A1 JP 2004013772 W JP2004013772 W JP 2004013772W WO 2005029657 A1 WO2005029657 A1 WO 2005029657A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
dimensional
polycrystalline silicon
semiconductor
layer
Prior art date
Application number
PCT/JP2004/013772
Other languages
English (en)
Japanese (ja)
Other versions
WO2005029657A8 (fr
Inventor
Toshihiro Nakamura
Hisashi Koaizawa
Hiroshi Kuraseko
Michio Kondo
Kenkichi Suzuki
Original Assignee
The Furukawa Electric Co., Ltd.
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Furukawa Electric Co., Ltd., National Institute Of Advanced Industrial Science And Technology filed Critical The Furukawa Electric Co., Ltd.
Priority to JP2005514094A priority Critical patent/JP4609856B2/ja
Publication of WO2005029657A1 publication Critical patent/WO2005029657A1/fr
Publication of WO2005029657A8 publication Critical patent/WO2005029657A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module and its components c
  • the biggest problem with solar cells is their high manufacturing cost. As of 2003, in Japan, the cost of electricity generated by solar cells is about 70 yen ZkWh, which is about three times higher than the commercial electricity rate of 25 yen ZkWh.
  • solar cells using a single crystal silicon substrate or a polycrystalline silicon substrate having high conversion efficiency are mainly used.
  • a P-type substrate is generally used, and an N-type semiconductor is created by doping phosphorus on the surface of the substrate, a PN junction is formed in the thickness direction of the substrate, and electrodes are formed on the back and front surfaces of the substrate.
  • the surface is silicon dioxide (SiO 2)
  • a transparent conductive film such as SnO or ZnO is formed by a sputtering method.
  • amorphous conductive film such as SnO or ZnO is formed by a sputtering method.
  • a-Si silicon
  • PCVD plasma CVD
  • the structure of the element is, for example, three layers of P-type, I-type, and N-type, and a PIN diode structure.
  • a back electrode is formed on a-Si by a method such as vapor deposition and sputtering.
  • binary compound semiconductors such as GaAs, InP, CdS and CdTe, and CuInSe
  • Such ternary compound semiconductors are also being studied.
  • porous TiO was impregnated with a dye.
  • Dye-impregnated solar cells have also been developed.
  • Organic semiconductor solar cells have also been developed.
  • a semiconductor substrate such as gallium arsenide (GaAs) / gallium nitride (GaN) or a glass substrate is used as a substrate.
  • a semiconductor substrate such as silicon or gallium arsenide (GaAs) / gallium nitride (GaN) or a glass substrate which is usually used for a solar cell is a two-dimensional flat substrate.
  • a silicon or GaAs semiconductor substrate is pulled up from a molten raw material using a seed crystal, a single crystal ingot is manufactured, cut, polished, and polished to obtain a mirror-finished semiconductor substrate.
  • the glass substrate is made of flat glass made by the float method, etc.! Polished and cut to size. Depending on the application, it may be used after cutting without polishing.
  • a method using a silicon substrate is very difficult because of a high raw material cost (substrate cost).
  • substrate cost raw material cost
  • a method using a glass substrate it has been studied to reduce the manufacturing cost by enlarging the substrate and increasing the throughput.
  • a-Si is most likely to be used, but there is a problem that the film formation rate cannot be increased because the film is formed at a low temperature, and the film thickness cannot be increased.
  • a-Si has a problem of low conversion efficiency because the absorption wavelength band is 0.8 m or less, which is lower than that of 1.1 m of monocrystalline silicon or polycrystalline silicon.
  • the manufacturing apparatus needs to be large, and there is a problem that the equipment cost is significantly increased.
  • vacuum deposition and PCVD sputtering equipment are all vacuum equipment. These are generally more expensive than normal pressure devices, and the increase in cost due to the increase in size is a particular problem.
  • the glass substrate in the case of lm 2 substrates used for heavy ingredients e.g. normal solar cells as compared with the semiconductor substrate, the weight is approximately very heavy and 9 kg 4 mm thickness.
  • an object of the present invention is to provide a solar cell module which is free from the disadvantages due to an increase in weight when the manufacturing cost is increased and the cost is reduced, and which is excellent in conversion efficiency and a component thereof.
  • the present invention provides a solar cell in which a PN-type or PIN-type semiconductor element serving as a photoelectric conversion element is formed on an outer surface of a long body having a diameter of 1000 m or less. Provide the element.
  • the PN-type or PIN-type semiconductor is preferably a polycrystalline silicon semiconductor.
  • the polycrystalline silicon semiconductor is formed on an outer surface of the elongated body and is electrically connected to each other, a P-type polycrystalline silicon layer (P-pSi layer). ), P + type polycrystalline silicon layer (P + -pSi layer) and N + type polycrystalline silicon layer (N + -pSi layer)
  • the P-type polycrystalline silicon layer is formed on an outer surface of a long body, and the P + -type polycrystalline silicon layer and the N + -type polycrystalline silicon layer are: It is preferable that each is formed on the P-type polycrystalline silicon layer.
  • the P + -type polycrystalline silicon layer, the P-type polycrystalline silicon layer, and the N + -type polycrystalline silicon layer are provided on an outer surface of the elongated body. It is preferred that the layers are laminated in this order from the outer surface side of the body or vice versa.
  • the polycrystalline silicon semiconductor is a P-type polycrystalline silicon layer and a part of the P-type polycrystalline silicon layer in the circumferential direction is made N-type by doping.
  • N-type polycrystalline silicon layer It is preferable to include an N-type polycrystalline silicon layer.
  • a plurality of the photoelectric conversion elements are formed along a longitudinal direction of the elongated body, and the plurality of photoelectric conversion elements are electrically connected by wiring. Is preferred.
  • silicon dioxide or the like is provided between the plurality of photoelectric conversion elements. It is preferable that an insulating film including at least one of silicon nitride and silicon nitride is further formed.
  • a protective film containing at least one of silicon dioxide and silicon nitride is formed on the outer surface of the solar cell element.
  • the elongated body preferably has a long fiber strength of quartz glass.
  • the present invention provides a solar cell module in which at least two or more solar cell elements of the present invention are arranged in parallel and Z or in series.
  • the solar cell module of the present invention preferably has a common wiring for electrically connecting different solar cell elements.
  • a reflector is further provided on a plane formed by at least two or more solar cell elements arranged in parallel and Z or in series.
  • the one-dimensional solar cell of the present invention is an element that becomes a solar cell (hereinafter referred to as a solar cell) using a one-dimensional semiconductor substrate in which a semiconductor thin film that becomes a solar cell is formed on a linear one-dimensional base material. Characterized by forming a battery element and ⁇ ⁇ )
  • the one-dimensional solar cell of the present invention is characterized in that a plurality of the solar cell elements are formed in a longitudinal direction of the one-dimensional base material!
  • the one-dimensional solar cell of the present invention is characterized in that a plurality of the solar cell elements are connected in series or in parallel.
  • the one-dimensional solar cell of the present invention is characterized by using a high melting point material such as ceramics such as quartz glass, multi-component glass, sapphire, alumina, carbon and silicon carbide as the one-dimensional substrate.
  • a high melting point material such as ceramics such as quartz glass, multi-component glass, sapphire, alumina, carbon and silicon carbide as the one-dimensional substrate.
  • one of the thin films formed on the one-dimensional substrate may be doped with! /, The semiconductor thin film, or P-type or N-type doped. It is characterized by being one of the semiconductor thin films.
  • the one-dimensional solar cell of the present invention is characterized in that the semiconductor thin film has a thickness of 0.5 ⁇ m or more and 50 ⁇ m or less. [0028]
  • the one-dimensional solar cell of the present invention is characterized in that the structure of the solar cell element forms at least one PN junction, PIN junction, NP junction, or NIP junction in the thickness direction of the thin film. .
  • the one-dimensional solar cell of the present invention is characterized in that one or more PN junctions or PIN junctions are formed in the longitudinal direction of the one-dimensional substrate.
  • the thin film of silicon dioxide (Si02) or silicon nitride (Si3N4) or both is formed. It is characterized by doing.
  • the one-dimensional solar cell of the present invention is characterized in that the wiring for connecting the solar cell element is formed in a part in the circumferential direction, and the force is formed so as to be substantially linear in the longitudinal direction. It shall be.
  • the one-dimensional solar cell of the present invention is characterized in that the one-dimensional base material has a cross-sectional shape of any one of a circle, a polygon, a rectangle, and a combined shape of an arc and a rectangle.
  • the one-dimensional solar cell of the present invention is characterized in that the one-dimensional substrate is a conductive fiber (wire).
  • the one-dimensional solar cell of the present invention is characterized in that the material of the fiber (wire) is any of aluminum, copper, steel, tungsten, molybdenum, or an alloy thereof.
  • the one-dimensional solar cell of the present invention is characterized in that a semiconductor layer to be a solar cell is formed after removing the oxide film formed on the surface of the wire.
  • the one-dimensional solar cell of the present invention is characterized in that the semiconductor is a binary semiconductor such as silicon or GaAs, a ternary semiconductor such as CuInS2, or a dye-sensitized semiconductor such as ZnO or ⁇ 02. It shall be.
  • a one-dimensional solar cell array in which a plurality of one-dimensional solar cells are arranged and arranged and connected by wiring is packaged on a mount, and terminals for connecting the wiring are provided on the mount. It is characterized by the following.
  • the solar cell module of the present invention is characterized in that the one-dimensional solar cells are integrated in a planar or curved shape. [0039]
  • the solar cell module of the present invention is characterized in that the wiring connected to each of the one-dimensional solar cells is provided on a side opposite to a light receiving surface side of the one-dimensional solar cell array.
  • the solar cell module of the present invention is characterized in that a plurality of the one-dimensional solar cells are arranged and connected, and are fixed directly to a flexible transparent sheet by a force or a sheet.
  • the solar cell module of the present invention is characterized in that the one-dimensional solar cells are connected to each other with a fiber or a wire to form an interdigital shape.
  • the solar cell module of the present invention is characterized in that the thickness is 0.04 mm or more and 10 mm or less.
  • one or a plurality of the solar cell modules constituted by the one-dimensional solar cells are connected to form a solar cell array, and the solar cell module or the solar cell array is charged. Characterized in that a discharge controller is connected
  • the solar cell power generation system of the present invention is further characterized in that an inverter is connected.
  • the solar cell power generation system of the present invention is characterized in that a battery is further connected.
  • a semiconductor element serving as a photoelectric conversion element is formed on the outer surface of a long body having a diameter of 1000 m or less.
  • the manufacturing cost of the solar cell is greatly reduced as compared with the case where is used.
  • the solar cell element of the present invention can apply the optical fiber technology, which has already been technically proven and has high productivity. For this reason, productivity is high and manufacturing cost is reduced.
  • the film formation rate is 100 nmZs to 100 nm or more. . This is 10 times the film formation rate when forming a film on a flat substrate by the conventional vacuum method. The force is also 100 times, and the throughput in the film forming process can be greatly improved. Further, since the film formation rate is high, the thickness of the polycrystalline silicon layer can be increased in a short time, and the conversion efficiency can be increased by growing silicon crystal grains.
  • the semiconductor element is formed on the outer surface of the elongated body having a diameter of 1000 m or less, an atmospheric pressure process that does not require the use of a vacuum device is possible. Therefore, the entire process can be performed without using an expensive vacuum process, and the equipment cost is low. Furthermore, since an atmospheric pressure process can be used, an expensive SiO film or
  • S13N film can be formed at low cost. Therefore, using these films as protective films
  • the weather resistance of the solar cell element can be significantly improved.
  • the conversion efficiency can be further improved due to the multiple reflection effect inside the elongated body. This can increase the conversion efficiency to a maximum of 20% or more.
  • the solar cell module of the present invention is formed by arranging at least two or more long solar cell elements having a diameter of 1000 m or less in parallel and Z or in series, a conventional two-dimensional glass substrate Can be made lighter than a solar cell module using the same. Specifically, when compared with the weight of the module itself, it can be reduced to 1Z10 or less as compared with the case where a conventional two-dimensional glass substrate is used. By reducing the weight of the module, the cost required for parts of the module divided by the installation cost can be reduced.
  • the solar cell module of the present invention includes at least a long-sized solar cell element.
  • the elongated members When two or more elongated members are arranged in parallel, the elongated members can have flexibility in the width direction of the elongated members by joining them with flexibility. Further, by using a flexible material such as quartz glass long fiber for the elongated body itself, a solar cell module having flexibility in the longitudinal direction of the elongated body can be obtained. As a result, a deformable solar cell module or a foldable solar cell module can be obtained.
  • FIG. 1 is a cross-sectional view of one configuration example of a solar cell element of the present invention.
  • FIG. 2 is a longitudinal sectional view of the solar cell element shown in FIG. 1 cut along line AA.
  • FIG. 3 is a cross-sectional view of another configuration example of the solar cell element of the present invention.
  • FIG. 4 is a longitudinal sectional view of the solar cell element shown in FIG. 3, taken along line BB.
  • FIG. 5 is a longitudinal sectional view of another configuration example of the solar cell element of the present invention.
  • FIG. 6 is a partially cutaway side view of the solar cell element shown in FIG.
  • FIG. 7 is a longitudinal sectional view of another configuration example of the solar cell element of the present invention.
  • FIG. 8 is a side view of the solar cell element shown in FIG. 7.
  • FIG. 9 is a longitudinal sectional view of one configuration example of the solar cell element of the present invention.
  • FIG. 10 is a diagram illustrating a method for connecting solar cell elements according to the present invention.
  • FIG. 11 is a diagram illustrating another method for connecting solar cell elements according to the present invention.
  • FIG. 12 is a conceptual diagram of a configuration example of a solar cell module according to the present invention.
  • FIG. 13 is a diagram for explaining a multiple reflection effect in the solar cell module of the present invention.
  • FIG. 14 is a conceptual diagram of a blind solar cell module, which is one configuration example of the solar cell module of the present invention.
  • FIG. 15 is a plan view of another configuration example of the solar cell module of the present invention, which is partially enlarged.
  • FIG. 16 is a conceptual diagram showing one configuration example of a solar cell system using the solar cell module of the present invention.
  • FIG. 17 is a diagram illustrating an example of a method for manufacturing a one-dimensional semiconductor substrate used for manufacturing a solar cell element according to the present invention.
  • FIGS. 18 (a) and (b) are longitudinal sectional views of a one-dimensional semiconductor substrate used for manufacturing a solar cell element of the present invention.
  • FIG. 19 is a diagram illustrating an example of a method for manufacturing a one-dimensional semiconductor substrate used for manufacturing a solar cell element according to the present invention.
  • FIG. 20 is a diagram illustrating an example of a method for manufacturing a one-dimensional semiconductor substrate used for manufacturing a solar cell element according to the present invention.
  • FIGS. 21 (a) and (b) are longitudinal sectional views of a one-dimensional semiconductor substrate used for manufacturing a solar cell element of the present invention.
  • FIG. 22 An example of a method for manufacturing a one-dimensional semiconductor substrate used for manufacturing a solar cell element of the present invention. It is a figure for explaining an example.
  • FIG. 23 is a diagram showing a step of manufacturing a solar cell element of the present invention using a one-dimensional semiconductor substrate.
  • FIG. 24 is a diagram showing a step of manufacturing a solar cell element of the present invention using a one-dimensional semiconductor substrate.
  • FIG. 25 is a conceptual diagram showing an example of segmentation of a dimensional semiconductor substrate.
  • FIG. 26 is a conceptual diagram showing a method for manufacturing a two-dimensional substrate.
  • FIG. 27 (a) is a diagram showing a cross section of a one-dimensional SOI substrate
  • FIG. 27 (b) is a diagram showing a cross section of a coated one-dimensional SOI substrate.
  • FIG. 28 is a diagram illustrating a cross-sectional view of a solar cell module and multiple reflection in a one-dimensional substrate.
  • FIG. 29 is a diagram showing a cross-sectional structure of a one-dimensional solar cell element.
  • FIG. 30 is a diagram illustrating a process flow of a type 1 fiber solar cell element.
  • FIG. 31 is a diagram illustrating a process flow of an 11-type fiber solar cell element.
  • Heating device 300 Jig
  • FIG. 1 is a side sectional view of one embodiment of the solar cell element of the present invention
  • FIG. 2 is a longitudinal sectional view taken along line AA of FIG.
  • the solar cell element 1 of the present invention has a plurality of photoelectric conversion elements 6 formed on the outer surface of a long body 2 having a circular cross section along the longitudinal direction.
  • a P-type polycrystalline silicon layer (P-pSi layer) 3 is formed on the outer surface of the long body 2, and the long side of the long body 2 is formed on the P-pSi layer 3.
  • a P + type polycrystalline silicon layer (P + —pSi layer) 4 and an N + type polycrystalline silicon layer (N + —pSi layer) 5 are formed at different positions in different directions.
  • the P-pSi layer 3, the P + -pSi layer 4 and the N + -pSi layer 5 are formed over the entire circumference of the elongated body 2. That is, in the solar cell element 1 of the present invention, the photoelectric conversion element 6 including the P—pSi layer 3, the P + —pSi layer 4, and the Formed over a long distance.
  • electrodes 7 are formed on P + —pSi layer 4 and N + —pSi layer 5, respectively, and different photoelectric conversion elements 6 are provided with wiring 8 between electrodes 7. It is electrically connected.
  • the electrode 7 is partially formed in the circumferential direction of the elongated body 2 on the P + -pSi layer 4 and the N + -pSi layer 5 formed over the entire circumference of the elongated body 2. Is formed.
  • the electrode 7 is formed on the back side with respect to the incident light side of the solar cell module, the electrode 7 This is preferable because the effective area can be increased.
  • FIG. 3 is a side sectional view of another embodiment of the solar cell element of the present invention
  • FIG. 4 is a longitudinal sectional view taken along line BB of FIG.
  • the solar cell element 10 shown in FIGS. 3 and 4 is different from the solar cell element 10 in that a plurality of photoelectric conversion elements 6 are formed on the outer surface of a long body 2 having a circular cross section along the longitudinal direction. And 2 and the configuration of the photoelectric conversion element 6 is different from that of the solar cell element 1 shown in FIGS. That is, in the solar cell element 10 shown in FIGS. 3 and 4, the P + -pSi layer 4 is formed on the outer surface of the elongated body 2, and the P-pSi layer 3 is formed on the P + -pSi layer 4. And an N + -pSi layer 5 are laminated in this order. That is, in the solar cell element 10 shown in FIGS.
  • the photoelectric conversion element is a PIN-type semiconductor element in which the P + —pSi layer 4, the P—pSi layer 3, and the N + —pSi layer 5 are laminated in this order. 6 is formed.
  • the P + pSi layer 4, the P—pSi layer 3 and the N + —pSi layer 5 are formed over the entire circumference of the elongated body 2.
  • the electrodes 7 are formed on the P +-pSi layer 4 and the N +-pSi layer 5, and the mutually different photoelectric conversion elements 6 are wired between the electrodes 7. It is electrically connected by providing 8.
  • an insulating film 9 is formed on a side surface of the photoelectric conversion element 6 to prevent a short circuit between the different photoelectric conversion elements 6.
  • the insulating film is generally made of silicon dioxide (SiO 2), silicon nitride (Si).
  • an insulating film may be formed on the side surface of the P-pSi layer 3 in order to prevent a short circuit between different photoelectric conversion elements 6.
  • the elongated body 2 is not limited to the illustrated circular shape as long as the elongated body has a small diameter of 1000 m or less. Therefore, the elongated body 2 may have an elliptical cross section, a polygon including a rectangle, or a shape obtained by combining an arc and a rectangle.
  • the major axis of the cross-sectional shape is 1000 m or less.
  • the cross-sectional shape is circular or elliptical, since it can be manufactured with a roll 'roll' while being wound around a mouth as described later.
  • the elongated body 2 has a circular or elliptical cross-sectional shape and is made of quartz glass having excellent light transmittance, multiple reflection of light inside the elongated body 2 will be described in detail later.
  • the photoelectric conversion efficiency of the solar cell elements 1 and 10 can be increased.
  • the cross section is elliptical, it is possible to easily recognize the surface on which the electrodes 7 of the solar cell elements 1 and 10 are formed and the surface having no electrodes 7 from the shape. Also in the process, the electrode 7 Or because it is easier to form the wiring 8.
  • the elongated body 2 is not particularly limited as long as it is a high melting point material capable of forming a semiconductor element on its outer surface. Therefore, the elongated body 2 may be made of a conductive metal material such as gold, silver, platinum, copper, aluminum, iron, stainless steel, magnesium, titanium, or an alloy thereof, or may be made of silicon fiber, quartz, or the like. Conductive or non-conductive ceramic materials such as long fibers such as glass or carbon fiber, multi-component glass, sapphire, alumina, and silicon carbide may be used.
  • quartz glass long fibers or carbon fibers are widely used for optical fibers, glass fiber reinforced plastics (GFRP), carbon fiber reinforced plastics (CFRP), and the like.
  • long quartz glass fibers have excellent heat resistance, and can use SOI (silicon on insulator) technology when forming a semiconductor element constituting the photoelectric conversion element 6 on the outer surface.
  • SOI silicon on insulator
  • the elongated body 2 is made of a conductive material such as a metal wire or carbon fiber, it is necessary to form an insulating layer on its outer surface and form a monocrystalline or polycrystalline silicon film thereon.
  • a semiconductor element can be formed using SOI technology.
  • the long body 2 is an insulator and is a quartz glass long fiber having excellent heat resistance
  • the SOI technology is applied by forming a single crystal or polycrystalline silicon film on the outer surface of the long fiber 2 as it is. be able to.
  • another reason that the quartz glass long fiber of the elongated body 2 is preferable is that, since it has excellent light transmittance, the photoelectric conversion efficiency can be enhanced by using the multiple reflection effect inside the elongated body 2. No.
  • the diameter of the elongated body 2 is preferably 800 ⁇ m or less, more preferably 150 m or less.
  • One advantage of the solar cell elements 1 and 10 of the present invention is that, as described later, a plurality of photoelectric conversion elements 6 are formed as a continuous elongated body 2 formed on an outer surface of the solar cell elements 1 and 10 in a roll-shaped roll. It can be manufactured while being wound on a bobbin. If the long body 2 has a diameter of 150 ⁇ m or less, it is more preferable to manufacture the long body 2 with a roll-to-roll using long quartz glass fibers.
  • the effective area of No. 6 has a preferable size, it is preferably 30 ⁇ m or more. If it is less than 30 / zm, the problem that the probability of breakage during the production increases and the number of arrays for arraying increases, which takes time and does not increase the throughput becomes remarkable.
  • the photoelectric conversion element 6 formed on the outer surface of the elongated body 2 may be a PN junction semiconductor instead of a PIN junction semiconductor.
  • a solar cell element having the same structure as solar cell element 1 shown in Figs. 1 and 2 has a P +-pSi layer and N +- pSi layer force is formed in the longitudinal direction of the elongated body in this order or in the opposite order.
  • the P + -pSi layer and the N + -pSi layer are formed by laminating the P-pSi layer without sandwiching them.
  • each layer in the photoelectric conversion element 6 is not limited to the illustrated embodiment, and the external surface side force of the elongated body 2 is also N + -pSi layer, P-pSi layer And N + junction semiconductor element in which P + and p + pSi layers are formed in this order
  • the photoelectric conversion element 6 is formed in a plurality of pieces. One photoelectric conversion element may be extended along.
  • each layer constituting the photoelectric conversion element 6 is formed over the entire circumference of the elongated body 2.
  • Each layer constituting the conversion element may be formed.
  • a common electrode for a plurality of photoelectric conversion elements formed on the elongate body is provided on a portion of the outer surface of the elongate body where the respective layers forming the photoelectric conversion element are not formed, in a longitudinal direction of the elongate body. It extends in the direction.
  • each layer constituting the photoelectric conversion element 6 can be appropriately selected as needed. Force The thickness of the photoelectric conversion element 6 as a whole is 0.5 ⁇ m or more and 50 ⁇ m or less. Is more preferably 2 ⁇ m or more and 30 ⁇ m or less. When the thickness of the photoelectric conversion element 6 is within the above range, it is preferable to take advantage of the advantage at the time of manufacturing the solar cell elements 1 and 10 of the present invention having a high film forming rate, and the solar cell elements 1 and 10 are preferable. Excellent photoelectric conversion efficiency.
  • the solar cell element of the present invention has a photovoltaic element on the outer surface of a long body having a diameter of 1000 m or less. Any configuration other than the above-described configuration may be used as long as a PN-type or PIN-type semiconductor element serving as a replacement element is formed.
  • FIG. 5 is a longitudinal sectional view of another configuration example of the solar cell element of the present invention
  • FIG. 6 is a partially cutaway side view of the solar cell element shown in FIG. It is the figure seen from the 4th quadrant side.
  • the metal electrode film 71 is formed on the outer surface of the long body 2 over the entire circumference.
  • examples of the metal material constituting the metal electrode film include Al, Ag, Cu, Mg, Rh, Ir, W, Mo, Pt, Ti and alloys thereof, and tungsten silicide (WSi). Of these, W and WSi are preferred because of their excellent heat resistance.
  • a P + -pSi layer 4, a P-pSi layer 3, and an N + -pSi layer 5 are laminated in this order to form a photoelectric conversion element 6, which is a PIN semiconductor element. I have.
  • a tin-doped indium oxide (ITO) film 72 is formed as a transparent electrode film.
  • the A1 film 13 is formed on the ITO film 72 in the second and third quadrants in FIG.
  • the A1 film 13 plays a role of an anti-reflection film and a low resistance film of the ITO film. Therefore, in FIG. 5, the first quadrant and the fourth quadrant are the light incident sides.
  • the solar cell element 11 shown in FIGS. 5 and 6 can be manufactured, for example, by the following procedure.
  • an amorphous silicon (a-Si) film is formed in order to prevent diffusion of metal atoms from the metal electrode film 71.
  • the film is crystallized by low-temperature radio-frequency (RF) heating to form a P + -pSi layer 4.
  • RF radio-frequency
  • a laser may be used instead of RF heating to crystallize the a-Si film.
  • a P + -pSi layer may be directly formed by using a thermal CVD method described later.
  • the thickness of the P + -pSi layer 4 can be, for example, about 100 nm.
  • a P-Si layer 3 is formed on the P + -pSi layer 4.
  • the P-Si layer 3 may be formed by using a thermal CVD method to be described later, or may be formed by applying slurry-like silicon particles and baking them by heating.
  • the N + -pSi layer 5 is formed on the P-Si layer 3, the ITO film 72 is formed, and the A1 film 13 is formed, whereby the solar cell element 11 shown in FIGS. 5 and 6 is obtained.
  • FIG. 7 is a longitudinal sectional view of another configuration example of the solar cell element of the present invention
  • FIG. 8 is a side view thereof.
  • a p-Si layer 3 is formed throughout.
  • a P + -pSi layer 4 is formed on the p-Si layer 3 in the first and fourth quadrants
  • an N +-pSi layer 4 is formed on the p-Si layer 3 in the second and third quadrants.
  • Layer 5 has been formed.
  • the P + -pSi layer 4 and the N + -pSi layer 5 are formed at an interval so as not to directly contact each other.
  • the p-Si layer 3, the P + pSi layer 4, and the N + -pSi layer 5 form a PIN-type semiconductor element, that is, a photoelectric conversion element 6.
  • the thickness of the p-Si layer 3 is, for example, 3 ⁇ m
  • the thickness of the P + -pSi layer 4 and the N + pSi layer 5 is, for example, 1 OO nm—number 1 OO nm.
  • FIG. 9 is a longitudinal sectional view of another configuration example of the solar cell element of the present invention.
  • the solar cell element 15 shown in FIG. 9 is composed of a P-type silicon layer 16 and an N-type silicon layer 17, both of which are separated in the circumferential direction.
  • the manufacturing method of the solar cell element 15 is as follows. First, a P-type polycrystalline silicon layer 16 is formed on the entire outer surface of the elongated body 2 and then a part of the P-type polycrystalline silicon film 16 in the circumferential direction is formed. Then, apply PSG (phospho-silicate-glass) in the longitudinal direction. Thereafter, heat treatment (1000 ° C, 20-40 min) is performed, and the glass generated by PSG is removed with hydrofluoric acid to form an N-type silicon layer.
  • PSG phospho-silicate-glass
  • FIG. 10 shows a method of connecting the solar cell element 15 of the present invention.
  • the solar cell elements 15 of the present invention are arranged side by side, and are connected at a connection portion 18 using silver paste or the like.
  • the electromotive force can be boosted.
  • Flexible solar cells can be produced by this method and lamination method.
  • the doping of impurities may be performed using a gas phase doping method.
  • the photoelectric conversion element formed on the outer surface of the elongated body may be a PN-type or PIN-type semiconductor element. It is not limited to. Therefore, it may be an amorphous silicon type semiconductor device, a binary compound semiconductor device such as GaAs, InP, CdS or CdTe, or a ternary compound semiconductor device such as CuInSe. Furthermore, the color of porous TiO
  • It may be a dye-impregnated semiconductor element impregnated with 22 elements.
  • a plurality of photoelectric conversion elements 6 are connected in series by the electrode 7 and the wiring 8, but are not limited thereto, and the electrode 7 and the wiring 8 may be arranged so that the photoelectric conversion elements 6 are connected to each other in parallel.
  • the solar cell element of the present invention may include components other than those illustrated.
  • a protective film for covering the outer surface of the solar cell element.
  • the protective film serves as an insulating film and an antireflection film, and is usually a silicon dioxide film, a silicon nitride film, or both.
  • FIG. 12 is a perspective view showing one embodiment of the solar cell module of the present invention.
  • a solar cell module 20 shown in FIG. 12 has a plurality of solar cell elements 1 and 10 of the present invention in which a photoelectric conversion element 6 is formed on the outer surface of a long body 2 having a diameter of 1000 m or less. Formed.
  • the solar cell element has been described with reference to the solar cell elements 1 and 10 shown in FIGS. 1 to 4, the solar cell element is not particularly limited as long as it is the solar cell element of the present invention.
  • the solar cell element 11 shown in FIGS. 7 and 8 may be used.
  • a protective film 12 which also functions as an insulating film and an antireflection film is formed on the outer surfaces of the solar cell elements 1 and 10.
  • an aluminum reflector 30 is provided on a plane formed by a plurality of solar cell elements 1 and 10 arranged in parallel.
  • the reflection plate 30 is formed with the electrodes 7 of the solar cell elements 1 and 10 shown in FIGS. 1 to 4. It is preferably formed on the surface on the side where it is provided.
  • a solar cell module 20 shown in FIG. 12 has a two-dimensional planar shape by arranging a plurality of long solar cell elements 1 and 10 in parallel. Therefore, the size of the module can be selected without being restricted by the manufacturing process as in the conventional solar cell module using the two-dimensional glass substrate. In other words, the size of the solar cell module can be freely selected according to the length of the solar cell elements 1 and 10 to be used and the number of the solar cell elements 1 and 10 arranged in parallel.
  • a plurality of solar cell elements 1 and 10 that are long bodies with a diameter of 1000 m or less are arranged side by side. Since the solar cell modules 20 are formed in a row, the weight can be reduced as compared with a conventional solar cell module using a two-dimensional glass substrate.
  • the weight of the solar cell module was about 700 g, which was less than 1Z10 when using a conventional two-dimensional glass substrate (about 9 kg when the glass thickness was 4 mm). As a result, it is possible to reduce solar cell module transportation costs, installation costs, and construction costs by 20% to 30%. Under the same conditions, when a 0.2 mm-diameter quartz glass fiber is used, the weight of the obtained solar cell module is about 3 kg.
  • the elongated body 2 constituting the solar cell elements 1 and 10 uses a quartz glass long fiber having a circular or elliptical cross section, and as shown in FIG.
  • the reflection plate 30 is formed on the back surface of the battery module 20, the conversion efficiency can be increased by multiple reflection.
  • FIG. 13 is a diagram for explaining the multiple reflection effect in the solar cell module 20 of the present invention.
  • the solar cell module 20 in which the elongated body 2 uses a quartz glass long fiber having excellent light transmittance the light transmitted through the protective film 12 formed on the surface of the solar cell element 1 is converted into the photoelectric conversion element 6 (semiconductor layer).
  • the light After passing through, the light passes through the quartz glass long fiber (long body) 2 without being absorbed, and a part is absorbed by the opposite photoelectric conversion element 6.
  • a part of the light beam is reflected at the interface between the quartz glass long fiber 2 and the photoelectric conversion element 6, and is absorbed by the photoelectric conversion element 6 while undergoing multiple reflection.
  • Light that has again entered the photoelectric conversion element 6 is transmitted while being absorbed, and is partially reflected and partially transmitted at the interface between the photoelectric conversion element 6 and the atmosphere.
  • power generation 60 is performed at a plurality of portions in the circumferential direction of the solar cell element 1, and the photoelectric conversion efficiency can be increased. This can increase the conversion efficiency from 12-15% to 17-20%.
  • the solar cell module of the present invention when a plurality of long thin bodies having a diameter of 1000 m or less are arranged in parallel and formed, the long bodies are connected with flexibility. In addition, it is possible to have flexibility in the width direction of the elongated body. Further, if the long body is formed of a material having excellent flexibility such as quartz glass long fiber, it is possible to make the long body also excellent in the longitudinal direction.
  • the solar cell module of the present invention has excellent flexibility. By virtue of the features described above, a solar cell module 20 in the form of a blind as shown in FIG. 14 or a foldable solar cell module (not shown) can be obtained. In a solar cell module 20 shown in FIG.
  • a plurality of solar cell elements are arranged in parallel, a plurality of solar cell elements are electrically connected to each other by a common electrode, and a wiring for power extraction is provided outside the common electrode.
  • a transparent sheet polyethylene terephthalate (PET), acrylic resin, Shiridani butyl resin, polycarbonate resin, etc.
  • DC is used in consideration of portability and portability.
  • a small fan can be rotated in an empty vehicle by the generation of solar cells to cool the interior of the automobile.
  • a Peltier element the inside of the vehicle can be cooled while the vehicle is empty.
  • it can drive electric fans, drive and charge personal computers, and charge mobile phones.
  • FIG. 15 is a plan view of another configuration example of the solar cell module, and the solar cell module is formed by arranging solar cell elements in parallel and in series.
  • a part of the solar cell module is shown in an enlarged manner.
  • two sets of 25 solar cell elements 1 arranged in parallel are arranged in series.
  • an element 21 serving as an electrode for extracting power and a joint for connecting the solar cell elements 1 to each other is attached.
  • a desired solar cell module 20 can be formed by arranging a plurality of solar cell elements 1 in parallel and Z or in series.
  • a solar cell module (length 50 cm, width 4 cm) formed by arranging 400 solar cell elements having a diameter of 0.1 mm and a length of 50 cm in parallel has the following performance.
  • the voltage 0.5 V is an ideal voltage in a silicon-based solar cell.
  • Output is the output when the area of the light input reflecting surface is assumed the output of the solar cell lm 2 and 100W.
  • Current Is derived from the electromotive force and the extraction voltage using the above equation.
  • a solar cell module (length lm, width 2 cm) formed by arranging 200 solar cell elements having a diameter of 0.1 mm and a length of lm in parallel has the following performance.
  • FIG. 16 is a diagram showing one configuration example of a solar cell system using the solar cell module of the present invention.
  • the solar cell system shown in FIG. 16 is an AC specification system.
  • the solar cell module 20 of the present invention is connected to a charge / discharge controller 22, an inverter 24, and connected to an external device (load) 26. is there.
  • the system shown in FIG. 16 also has a battery 128 connected to store daytime power.
  • the solar cell element and the solar cell module of the present invention are not limited to those manufactured by any of the following methods as long as the above-described configuration can be realized.
  • FIG. 17 is a diagram for explaining a method for manufacturing a one-dimensional semiconductor substrate used for manufacturing a solar cell element of the present invention, and shows an example of a manufacturing apparatus used for the method.
  • the manufacturing apparatus shown in Fig. 17 has the same basic structure as the optical fiber drawing apparatus, except that the upper part of the furnace is of a closed type, the force for publishing the inside of the heating furnace with Ar or He gas, and the like.
  • the raw material is heated and the vapor pressure is used to generate the raw material gas (silicon raw material gas SiCl, SiHC
  • a silicon polycrystalline film is formed on the outer surface of the fiber, and a plurality of heaters provide a temperature distribution in the longitudinal direction of the drawing.
  • the upper heater 120 heats and melts the preform (base material) 110 introduced from the drive shaft 100, and the other heaters 130, 140, and 150 heat the source gas and adjust the temperature of the atmosphere. It is for doing.
  • the atmosphere containing the heater sections 130, 140, 150 and the preform 110 is separated by a furnace tube 160. Core tube As 160, carbon is used.
  • furnace tubes and components made of quartz or SiC, or carbon or SiC coated with SiC can be used.
  • an inert gas (Ar or He) gas is supplied to increase the pressure in the furnace above the atmospheric pressure and, if necessary, to create a pressurized atmosphere.
  • Such gas is mainly exhausted from the upper part.
  • Source gas and reacted gas are exhausted from the outlet side of the furnace.
  • a shielding means for separating the atmosphere gas and the source gas is provided in the furnace. Thereby, mixing of both gases can be prevented.
  • an inert gas is supplied to prevent air from entering the furnace so that air does not enter the furnace.
  • the second heater 130 (second from above) of the drawing furnace is a reaction heater, and the temperature of the quartz glass filament is higher than the melting point of silicon (1412 ° C) (from 1430 ° C to 1600 ° C). (° C) so that the source gas is supplied. It is considered that the silicon deposited on the surface of the quartz glass long fiber becomes liquid because the temperature of the quartz glass long fiber is equal to or higher than the melting point of silicon.
  • the method shown in the drawing is different from a normal method for manufacturing a solar cell in that a polycrystalline silicon film is formed by thermal CVD under normal pressure or pressure. In the prior art, a polycrystalline silicon film is formed on a two-dimensional glass substrate in a vacuum using a PCVD or sputtering method.
  • the thickness of the film can be controlled by the concentration of the raw material in the furnace tube, the temperature, the distance and the pressure of the first heater power of the drawing furnace.
  • Furnace 140, 150 with two heaters in the lower stage is a furnace for particle growth. Cooling with an appropriate temperature gradient cools and solidifies the molten silicon.
  • linear velocity fluctuation a fluctuation of 10% to 20% of the set linear velocity can usually occur
  • film thickness To deal with fluctuations in height.
  • the drawing speed is increased, the temperature distribution is lengthened.
  • the particle size can be changed by adjusting nucleation conditions and crystal growth conditions during film formation.
  • the generation of nuclei is suppressed by setting the heater temperature in the initial stage of film formation from 300 ° C to 700 ° C during nucleus growth, and the growth rate is increased by setting the heater temperature from 800 ° C to 1,600 ° C during crystal growth. it can.
  • the temperature distribution in the longitudinal direction in the drawing direction nucleation and crystal growth can be controlled continuously.
  • the one-dimensional semiconductor substrate coming out of the drawing furnace 160 is cooled by the cooling device 180 (using He gas for V, Then, the surface of the one-dimensional semiconductor substrate is coated with a resist or the like to be used in a resin / device process using a resist coating device 190, and the resist is heated and cured in a heating furnace 200. This is to protect the formed polycrystalline silicon film.
  • the one-dimensional semiconductor substrate is pulled out by a capstan 210 and wound up by a double spooler (a winder capable of winding continuously from a full bobbin to an empty bobbin without reducing the speed) 220.
  • the winding amount of one bobbin is set at 50 km to 200 km. With a 1000 km base material, 5 to 20 bobbins will be formed.
  • the cross-sectional shape of the one-dimensional semiconductor substrate is substantially determined by the shape of the base material used. In this case, the shape can be substantially defined by preforming the preform into a desired shape.
  • FIGS. 18A and 18B are diagrams showing an example of a cross-sectional shape of a one-dimensional semiconductor substrate.
  • (A) has a rectangular cross-sectional shape
  • (b) has a circular cross-sectional shape.
  • the polycrystalline silicon film 3 is formed on the outer surface of the long quartz glass fiber 2.
  • the corners are slightly rounded and the R portion becomes large, but it is possible to draw a line so as to keep the almost processed shape.
  • the change in shape can be reduced.
  • extend the length of the heater for drawing use multiple heaters, or control the temperature of the reaction heater to a higher temperature to lower the temperature in the drawing furnace 160 to about 1800 ° C. be able to.
  • an ordinary optical fiber drawing technique can be used. That is, the base material processed into a desired shape is melted and spun in a drawing furnace 160, and the shape of the one-dimensional semiconductor substrate is measured at an exit portion of the drawing furnace with an outer diameter measuring device or a shape measuring device. Is drawn out of the drawing furnace 160 while controlling the drawing speed and / or the feeding speed of the base material so that the constant is constant, and the film is wound up by the winder 220. In the case of the original semiconductor substrate, the variation of the outer diameter can be reduced to 1 ⁇ m or less.
  • a high-temperature process can be performed while running the quartz glass long fiber at high speed.
  • a polycrystalline silicon film can be formed at a deposition rate of 10 to 100 times or more as compared with the case of forming a film on a two-dimensional glass substrate using a vacuum method, and at a high throughput (high speed of 20 mZs or more).
  • a one-dimensional semiconductor substrate can be manufactured at low cost.
  • the weight of the substrate used is about 9 kg for a two-dimensional glass substrate, but is about 700 g for a one-dimensional semiconductor substrate used in the present invention (when a quartz glass filament having a diameter of 0.1 mm is used).
  • the use amount of the base material can be reduced to 1Z10 or less.
  • the manufacturing equipment can be very cheap and the capital investment can be suppressed as compared with the manufacturing equipment for grinding and polishing a glass substrate for semiconductor devices and liquid crystals.
  • the drawn quartz glass long fiber has a clean surface and a small roughness of several tens of nanometers, so that cleaning or polishing before film formation is unnecessary. This is another factor that can reduce manufacturing costs.
  • the polycrystalline silicon film to be formed can be formed without touching a solid object until the film is formed. It can be manufactured at high speed without any problems.
  • the force for drawing the quartz glass long fiber and forming the polycrystalline silicon film in the drawing furnace 160 are different from each other as shown in FIG. 19 in that the drawing furnace 160 and the film forming furnace 161 are separated.
  • a furnace is fine.
  • a polycrystalline silicon film is formed in the film forming furnace 161 on the quartz glass long fiber drawn from the preform 110 in the drawing furnace 160.
  • the air enters the film forming furnace 161 it becomes an impurity and reacts to form particles, which deposit on the film and cause defects. Therefore, the space between the drawing furnace 160 and the film forming furnace 161 must be airtight. is necessary. For this reason, in FIG.
  • the drawing furnace 160 and the film forming furnace 161 are air-tightly connected by the connecting cylinder 162.
  • the inside of the film forming furnace 161 needs to be made to have an atmosphere of an inert gas or the like so that the atmosphere does not enter. For this reason, it is preferable that the pressure in the film forming furnace 161 be higher than the atmospheric pressure.
  • a P-type polycrystalline silicon layer (P-pSi layer) and an N + -type polycrystalline silicon layer (N + -pSi layer) are stacked and formed on the outer surface of long quartz glass fibers. Have been.
  • FIG. 20 is a diagram for explaining this manufacturing method, and shows an example of a manufacturing apparatus used in this manufacturing method.
  • the manufacturing method shown in Fig. 20 has almost the same force as the manufacturing method shown in Fig. 17.
  • a P-type polycrystalline silicon film is formed on the outer surface of a drawn quartz glass filament, and then an N + -type polycrystalline silicon film is formed. The difference is that silicon is deposited.
  • P-type polycrystalline silicon In the case of recon, silicon material (SiCl, SiCl H, etc.) and boron (B), which is a P-type dopant
  • A1 material are supplied to form a film.
  • a silicon material SiCl, SiCl H, etc.
  • a phosphorus (P) or bismuth (Bi) material serving as an N-type dopant are supplied.
  • a film is formed.
  • the carrier concentration of the semiconductor to be formed can be controlled by the concentration of the supplied dopant, and a P-type, P + -type, N-type, and N + -type polycrystalline silicon layer can be formed.
  • FIGS. 21 (a) and 21 (b) are views showing a cross-sectional shape of a one-dimensional semiconductor substrate manufactured by the method shown in FIG.
  • the cross section of the substrate (a) is rectangular, and the cross section of the substrate (b) is circular.
  • a P-type polycrystalline silicon film 3 is formed on the outer surface of a quartz glass long fiber 2, and an N + type polycrystalline silicon film 5 is formed thereon.
  • FIG. 22 is a diagram for explaining another method for manufacturing a one-dimensional semiconductor substrate used for manufacturing the solar cell element of the present invention, and shows an example of a manufacturing apparatus used for the manufacturing method. I have.
  • the quartz glass filaments are drawn without flowing the raw material gas, cooled in the cooling device 180, and then suspended in water or alcohol in the coating device 230 to form a slurry.
  • the outer surface of the quartz glass long fiber is coated with the silicon particles thus obtained, and is heated and baked by a calo heating device 240 or re-melted to form a polycrystalline silicon film, and then coated with a resist or the like and wound up.
  • This method can be applied to the case of forming a semiconductor film other than silicon.
  • the solar cell element of the present invention A procedure for manufacturing a solar cell module using the solar cell element will be described.
  • the steps of manufacturing the solar cell element of the present invention using the one-dimensional semiconductor substrate manufactured by the above procedure include a protective film removing step, a semiconductor film forming step, a doping step, an element separating step, an electrode forming step, and a cutting step.
  • Consisting of Figure 23 shows the flow of these steps.
  • the process of supplying and winding with a bobbin for each process may be repeated several times.
  • FIG. 24 shows a process flow in the case where the semiconductor film forming process is performed up to the element isolation process at one time and then wound once on a bobbin to form an electrode later. In this case, it is preferable that the treated film is not damaged!
  • FIG. 25 is a diagram illustrating an example of a segmented primary semiconductor substrate.
  • a plurality of solar cell elements 1 are fixed around a cylindrical jig 300 to form a roller-shaped substrate.
  • a one-dimensional semiconductor substrate is integrated, segmented or arrayed, and formed into a roller-shaped substrate or a planar substrate to reduce the size of the device used in the manufacturing process of the solar cell element while reducing the cost.
  • the throughput can be increased by several tens or even hundreds or thousands of times. Further, it is not necessary to apply an excessive tension to the one-dimensional semiconductor substrate, and the process can be performed in a non-contact manner.
  • the assembly time of the solar cell module can be reduced.
  • differential evacuation may be performed and a vacuum process may be performed.
  • an atmospheric pressure process may be used in consideration of productivity and maintainability.
  • processes such as coating removal by atmospheric pressure plasma, formation of a semiconductor film, etching and electrode formation, removal of a protective film by wet etching, wiring by an inkjet dispenser or a printing technique, and etching by a laser can be considered.
  • solar cell elements are manufactured without segmentation and with one-dimensional semiconductor substrates, It is preferable to increase the film formation rate by using atmospheric pressure plasma or high temperature thermal CVD in consideration of the properties.
  • the productivity can be further improved.
  • a PN-type or PIN-type semiconductor element as a photoelectric conversion element on the outer surface of the elongated body, it can be easily applied to a solar cell element and a solar cell module.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module pile solaire présentant un faible coût de production et une excellente efficacité de conversion. Ce module n'entraîne pas les effets négatifs généralement liés à l'augmentation de ses dimensions. L'invention concerne également un procédé de production des éléments constituant ledit module. L'invention concerne encore un élément de pile solaire comportant un dispositif semiconducteur de type PN ou PIN, servant d'élément de conversion photoélectrique. Ce dispositif est formé sur la surface extérieure d'un corps allongé présentant un diamètre de 1000 νm ou inférieur.
PCT/JP2004/013772 2003-09-19 2004-09-21 Module pile solaire et elements constituants WO2005029657A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005514094A JP4609856B2 (ja) 2003-09-19 2004-09-21 一次元太陽電池、太陽電池モジュール、および、太陽電池発電システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-328860 2003-09-19
JP2003328860 2003-09-19

Publications (2)

Publication Number Publication Date
WO2005029657A1 true WO2005029657A1 (fr) 2005-03-31
WO2005029657A8 WO2005029657A8 (fr) 2005-05-12

Family

ID=34372917

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/013772 WO2005029657A1 (fr) 2003-09-19 2004-09-21 Module pile solaire et elements constituants

Country Status (2)

Country Link
JP (1) JP4609856B2 (fr)
WO (1) WO2005029657A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352051A (ja) * 2005-06-20 2006-12-28 Kazuhiro Toida テレメータ電源用光電変換器とそれに用いる光導波路の製法
JP2007308756A (ja) * 2006-05-18 2007-11-29 Furukawa Electric Co Ltd:The 薄膜シリコン基板およびその製造方法
WO2008060538A2 (fr) * 2006-11-15 2008-05-22 Solyndra, Inc. Système de fixation de cellules solaires allongées
WO2008137140A2 (fr) * 2007-05-03 2008-11-13 Solyndra, Inc. Intégration monolithique de cellules solaires non planes
WO2008051275A3 (fr) * 2006-03-18 2009-02-12 Solyndra Inc Cellules solaires non planes à intégration monolithique
JP2009535841A (ja) * 2006-05-01 2009-10-01 ウェイク フォレスト ユニバーシティ 有機光電子デバイスおよびその応用
JP2009535860A (ja) * 2006-05-01 2009-10-01 ウェイク フォレスト ユニバーシティ ファイバ光起電性デバイスおよびその応用
JP2010171364A (ja) * 2009-01-23 2010-08-05 Samsung Electronics Co Ltd シリコン膜の形成方法、ｐｎ接合の形成方法、及びこれを用いて形成されたｐｎ接合
JP2011503849A (ja) * 2007-11-01 2011-01-27 ウェイク フォレスト ユニバーシティ ラテラル型有機光電デバイス及びその用途
US8227684B2 (en) 2006-11-14 2012-07-24 Solyndra Llc Solar panel frame
JP2012186233A (ja) * 2011-03-03 2012-09-27 Jsr Corp デバイス及びこの製造方法
JP2012186231A (ja) * 2011-03-03 2012-09-27 Jsr Corp 太陽電池
JP2013175746A (ja) * 2006-03-18 2013-09-05 Solyndra Inc ケース入長形光電池
US8530737B2 (en) 2006-11-15 2013-09-10 Solyndra Llc Arrangement for securing elongated solar cells
WO2013174548A3 (fr) * 2012-05-22 2014-06-19 Crystalsol Gmbh Procédé pour produire des composants optoélectroniques connectés et composants optoélectroniques connectés

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101358857B1 (ko) * 2012-05-18 2014-02-06 최대규 태양전지
DE102015117793A1 (de) 2015-10-19 2017-04-20 Hanwha Q Cells Gmbh Rückseitenelement für ein Solarmodul

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833718B2 (ja) * 1975-12-26 1983-07-21 株式会社ポリトロニクス 多層同軸繊維状太陽電池
JPS6042876A (ja) * 1983-08-19 1985-03-07 Masahisa Muroki 布状太陽電池
JPS6084886A (ja) * 1983-10-14 1985-05-14 Sumitomo Electric Ind Ltd 線状非晶質太陽電池
JPS6084887A (ja) * 1983-10-14 1985-05-14 Sumitomo Electric Ind Ltd 線状非晶質太陽電池の製造方法
JPS60200578A (ja) * 1984-03-26 1985-10-11 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS648614A (en) * 1987-06-30 1989-01-12 Kanegafuchi Chemical Ind Film formation of filamentary substrate
JPH0738130A (ja) * 1993-06-28 1995-02-07 Matsushita Electric Ind Co Ltd 太陽電池電源システムの蓄電池制御法
JPH0745853A (ja) * 1993-07-29 1995-02-14 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
JP2000022184A (ja) * 1998-07-03 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 球状または棒状結晶太陽電池およびその製造方法
JP2002112461A (ja) * 2000-09-29 2002-04-12 Canon Inc 電力変換装置および発電装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833718B2 (ja) * 1975-12-26 1983-07-21 株式会社ポリトロニクス 多層同軸繊維状太陽電池
JPS6042876A (ja) * 1983-08-19 1985-03-07 Masahisa Muroki 布状太陽電池
JPS6084886A (ja) * 1983-10-14 1985-05-14 Sumitomo Electric Ind Ltd 線状非晶質太陽電池
JPS6084887A (ja) * 1983-10-14 1985-05-14 Sumitomo Electric Ind Ltd 線状非晶質太陽電池の製造方法
JPS60200578A (ja) * 1984-03-26 1985-10-11 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS648614A (en) * 1987-06-30 1989-01-12 Kanegafuchi Chemical Ind Film formation of filamentary substrate
JPH0738130A (ja) * 1993-06-28 1995-02-07 Matsushita Electric Ind Co Ltd 太陽電池電源システムの蓄電池制御法
JPH0745853A (ja) * 1993-07-29 1995-02-14 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
JP2000022184A (ja) * 1998-07-03 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 球状または棒状結晶太陽電池およびその製造方法
JP2002112461A (ja) * 2000-09-29 2002-04-12 Canon Inc 電力変換装置および発電装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352051A (ja) * 2005-06-20 2006-12-28 Kazuhiro Toida テレメータ電源用光電変換器とそれに用いる光導波路の製法
JP2013175746A (ja) * 2006-03-18 2013-09-05 Solyndra Inc ケース入長形光電池
JP2014168085A (ja) * 2006-03-18 2014-09-11 Solyndra Inc 非平面太陽電池のモノリシック集積
CN101517740B (zh) * 2006-03-18 2013-03-27 索林塔有限公司 非平面太阳能电池的单片集成电路
US8742252B2 (en) 2006-03-18 2014-06-03 Solyndra, Llc Elongated photovoltaic cells in casings with a filling layer
CN103236432A (zh) * 2006-03-18 2013-08-07 索林塔有限公司 非平面太阳能电池的单片集成电路
WO2008051275A3 (fr) * 2006-03-18 2009-02-12 Solyndra Inc Cellules solaires non planes à intégration monolithique
JP2009530858A (ja) * 2006-03-18 2009-08-27 ソルインドラ，インコーポレーテッド 非平面太陽電池のモノリシック集積
US8772629B2 (en) 2006-05-01 2014-07-08 Wake Forest University Fiber photovoltaic devices and applications thereof
JP2009535860A (ja) * 2006-05-01 2009-10-01 ウェイク フォレスト ユニバーシティ ファイバ光起電性デバイスおよびその応用
JP2009535841A (ja) * 2006-05-01 2009-10-01 ウェイク フォレスト ユニバーシティ 有機光電子デバイスおよびその応用
US8558105B2 (en) 2006-05-01 2013-10-15 Wake Forest University Organic optoelectronic devices and applications thereof
JP2007308756A (ja) * 2006-05-18 2007-11-29 Furukawa Electric Co Ltd:The 薄膜シリコン基板およびその製造方法
US8227684B2 (en) 2006-11-14 2012-07-24 Solyndra Llc Solar panel frame
US8530737B2 (en) 2006-11-15 2013-09-10 Solyndra Llc Arrangement for securing elongated solar cells
WO2008060538A3 (fr) * 2006-11-15 2008-11-13 Solyndra Inc Système de fixation de cellules solaires allongées
WO2008060538A2 (fr) * 2006-11-15 2008-05-22 Solyndra, Inc. Système de fixation de cellules solaires allongées
WO2008137140A3 (fr) * 2007-05-03 2008-12-31 Solyndra Inc Intégration monolithique de cellules solaires non planes
WO2008137140A2 (fr) * 2007-05-03 2008-11-13 Solyndra, Inc. Intégration monolithique de cellules solaires non planes
JP2011503849A (ja) * 2007-11-01 2011-01-27 ウェイク フォレスト ユニバーシティ ラテラル型有機光電デバイス及びその用途
JP2010171364A (ja) * 2009-01-23 2010-08-05 Samsung Electronics Co Ltd シリコン膜の形成方法、ｐｎ接合の形成方法、及びこれを用いて形成されたｐｎ接合
JP2012186231A (ja) * 2011-03-03 2012-09-27 Jsr Corp 太陽電池
JP2012186233A (ja) * 2011-03-03 2012-09-27 Jsr Corp デバイス及びこの製造方法
WO2013174548A3 (fr) * 2012-05-22 2014-06-19 Crystalsol Gmbh Procédé pour produire des composants optoélectroniques connectés et composants optoélectroniques connectés
US9343611B2 (en) 2012-05-22 2016-05-17 Crystalsol Gmbh Method for producing interconnected optoelectronic components, and interconnected optoelectronic components

Also Published As

Publication number Publication date
JP4609856B2 (ja) 2011-01-12
JPWO2005029657A1 (ja) 2007-11-15
WO2005029657A8 (fr) 2005-05-12

Similar Documents

Publication Publication Date Title
WO2005029657A1 (fr) Module pile solaire et elements constituants
JP3152328B2 (ja) 多結晶シリコンデバイス
EP1968121B1 (fr) Procédé de fabrication d&#39;une cellule solaire en silicone monocristallin et cellule solaire en silicone monocristallin
TWI500172B (zh) 光電轉換裝置和其製造方法
US8390086B2 (en) Solar cell employing a nanowire
CN101794834B (zh) 设有上转换荧光材料膜层的高效太阳能薄膜电池及其膜层制备方法
US20080121278A1 (en) Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell
US20090242019A1 (en) Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping
US8778719B2 (en) Linear semiconductor substrate, and device, device array and module, using the same
US8110419B2 (en) Process of manufacturing photovoltaic device
CN103107228B (zh) 光电转换装置
JP2001177137A (ja) 統一性の高いインタコネクトと二重層接点とを備えた薄膜光起電力モジュールの製造
WO2015156874A2 (fr) Intégration de cellules solaires à décollement épitaxial dans des réseaux de concentrateurs mini paraboliques par l&#39;intermédiaire d&#39;un procédé d&#39;impression
CN101681945B (zh) 高效率太阳能电池、其制造方法和制造设备
US20120247543A1 (en) Photovoltaic Structure
US20080236665A1 (en) Method for Rapid Liquid Phase Deposition of Crystalline Si Thin Films on Large Glass Substrates for Solar Cell Applications
JP3025179B2 (ja) 光電変換素子の形成方法
US20180240920A1 (en) Solar cell, method for manufacturing the same, and electrical equipment
JPH1012908A (ja) 半導体装置及び微粒子半導体膜の製造方法及び光電変換素子
Sethi et al. Cost Boundary in Silicon Solar Panel
TWI405343B (zh) 具有高光電轉換效率之可撓式太陽能電池及其製備方法
US20130095296A1 (en) Photovoltaic Substrate
JP2004095881A (ja) 薄膜太陽電池
JPS6384076A (ja) 光起電力素子
CN104835860A (zh) 具有双层钝化层的太阳能电池及其制备方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MK MN MW MX MZ NA NI NO NZ PG PH PL PT RO RU SC SD SE SG SK SY TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SZ TZ UG ZM ZW AM AZ BY KG MD RU TJ TM AT BE BG CH CY DE DK EE ES FI FR GB GR HU IE IT MC NL PL PT RO SE SI SK TR BF CF CG CI CM GA GN GQ GW ML MR SN TD TG

WR Later publication of a revised version of an international search report
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2005514094

Country of ref document: JP

122 Ep: pct application non-entry in european phase