WO2005013003A2 - Multilayer reflective extreme ultraviolet lithography mask blanks - Google Patents

Multilayer reflective extreme ultraviolet lithography mask blanks Download PDF

Info

Publication number
WO2005013003A2
WO2005013003A2 PCT/US2004/023237 US2004023237W WO2005013003A2 WO 2005013003 A2 WO2005013003 A2 WO 2005013003A2 US 2004023237 W US2004023237 W US 2004023237W WO 2005013003 A2 WO2005013003 A2 WO 2005013003A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ruthenium
nanometers
mask
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/023237
Other languages
French (fr)
Other versions
WO2005013003A3 (en
Inventor
Pei-Yang Yan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to EP04778644A priority Critical patent/EP1660941B1/en
Priority to AT04778644T priority patent/ATE434777T1/en
Priority to DE602004021705T priority patent/DE602004021705D1/en
Publication of WO2005013003A2 publication Critical patent/WO2005013003A2/en
Publication of WO2005013003A3 publication Critical patent/WO2005013003A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Definitions

  • extreme ultraviolet lithography mask blanks In extreme ultraviolet lithography, a mask is formed from a blank. The blank provides a reflective surface which defines features. Extreme ultraviolet radiation is shined on the blank and is reflected therefrom to transfer features from the blank to a semiconductor wafer in a repeatable fashion.
  • extreme ultraviolet lithography masks are reflective masks fabricated by depositing interference multilayers such as molybdenum and silicon in alternating layers. The very top ending layer is referred to as a capping layer. Typically a silicon layer is used as a capping layer.
  • the thicker silicon capping layer is needed because of the mask patterning process control requirements.
  • the silicon capping layer serves as the etch stop layer for the buffer layer etch.
  • the buffer layer etch when the etch selectivity to the multilayer capping layer is low, the capping layer is partially and non-uniformly removed.
  • one promising buffer layer for extreme ultraviolet lithography mask patterning is silicon dioxide.
  • the etch selectivity to the silicon capping layer in a square mask etcher is rather low, for example, about 3 to 1. Thus, there is a need for better ways to make blanks for extreme ultraviolet lithography.
  • Figure 1 is a partial, enlarged cross-sectional view of one embodiment of the present invention.
  • An upper masking layer 18 and a lower masking layer 16 have an aperture 22. Radiation, indicated by the lines L, is reflected from the bottom of the aperture 22. The radiation may be extreme ultraviolet irradiation in one embodiment of the present invention. A pattern of a large number of apertures 22 may be transferred to a semiconductor wafer (not shown) by reflecting radiation from those apertures 22. The radiation is actually reflected from the capping layer 14 that, in one embodiment of the present invention, may be formed of ruthenium. In one embodiment, the layer 14 may be of a thickness of from about 1 to 4.5 nanometers and, particularly, greater than 2 nanometers.
  • a ruthenium capping layer 14 is resistant to the oxidation.
  • the etch selectivity of the buffer silicon dioxide layer to ruthenium is much larger than that of a silicon capping layer.
  • the ruthenium layer also has better chemical cleaning resistance than a silicon capping layer. While ruthenium has a higher extreme ultraviolet absorption coefficient than silicon, a sufficiently thin ruthenium capping layer may be utilized without dramatically reducing the multilayer reflectivity.
  • a ruthenium capping layer 14 of 2 nanometers may be susceptible to damage during mask patterning processes. However, a thicker ruthenium capping layer may reduce the multilayer reflectivity, and may produce a larger multilayer reflectivity variation, if the ruthenium capping layer happens to be non-uniform.
  • the ruthenium capping layer 14 may be deposited over an interface layer 20.
  • the interface layer 20 may be molybdenum or boron carbide, to mention two examples.
  • the layer 20 may reduce or prevent inter-diffusion between the layers 14 and 22.
  • the layer 20 may be 5 Angstroms in thickness .
  • a spacer layer 22, below the layer 20, may have a thickness between about 2.4 and about 3.8 nanometers in one embodiment of the present invention. In this range, the multilayer reflectivity variation, as a result of any ruthenium capping layer 14 thickness variation, may be controlled.
  • the spacer layer 22 has lower extreme ultraviolet absorption.
  • the spacer layer 22 may be silicon, in one embodiment. Below the layer 22 is the multilayer stack 12.
  • the multilayer stack includes a first layer of silicon of approximately 4.2 nanometers covered by a layer of molybdenum of 2.8 nanometers. This may be followed by another layer of silicon and thereafter another layer of molybdenum in one embodiment of the present invention.
  • optimizing the spacer layer 22 may enable the use of a thicker capping layer 14 that may be used to protect the multilayer stack 12 from damage from the patterning process steps.
  • the optimized spacer layer 22 not only can optimize the peak multilayer reflectivity, but can also reduce or even minimize, for a given capping layer material and thickness, the multilayer reflectivity variation when the capping layer 14 is partially and non- uniformly removed. This may result in larger mask patterning process margins in some embodiments.
  • the optimized capping layer 14 thickness is around 2 nanometers.
  • This thickness provides maximum multilayer blank peak reflectivity of about 75 percent and minimum reflectivity variation of 0.5 percent when layer 14 thickness varies from 2-0.4 nanometers.
  • this relatively thin capping layer 14 thickness gives rise to the problems with capping layers described above. To increase the capping layer 14 thickness beyond 2 nanometers without optimizing the spacer layer 22, the blank peak reflectivity will be reduced drastically as layer 14 thickness increases.
  • the average reflectivity reduction per nanometer of capping layer 14 thickness increase for capping layer 14 thicknesses in the range of 2-4 nanometer is about 3.5 percent. As a result, larger reflectivity variation will result when the capping layer 14 thickness variation exists.
  • the optimized capping layer 14 thickness can go up to 2.3 nanometers with only a slight increase in the multilayer blank peak reflectivity. The multilayer reflectivity variation is still within 0.5 percent when the capping layer 14 thickness variation is between 2.3-0.7 nanometers.
  • the optimized capping layer 14 thickness can go up to 3.3 nanometers with slight treadoff for the peak reflectivity (about 1.0 percent reflectivity loss).
  • the capping layer 14 thickness variation can be between 3.3-1.7 nanometers.
  • the optimized capping layer 14 thickness can go up to 3.8 nanometers, again with a small tradeoff for the peak reflectivity (about 2.5 percent reflectivity loss).
  • the capping layer 14 thickness can vary from 3.8-2.4 nanometers with a reflectivity variation of less than 0.5 percent.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An extreme ultraviolet lithography mask may be formed of a multilayered stack covered by a spacer layer, such as silicon or boron carbide, in turn covered by a thin layer to prevent inter-diffusion, and finally covered by a capping layer of ruthenium. By optimizing the spacer layer thickness based on the capping layer, the optical properties may be improved.

Description

MULTILAYER REFLECTIVE EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANKS Background This invention relates generally to extreme ultraviolet lithography mask blanks. In extreme ultraviolet lithography, a mask is formed from a blank. The blank provides a reflective surface which defines features. Extreme ultraviolet radiation is shined on the blank and is reflected therefrom to transfer features from the blank to a semiconductor wafer in a repeatable fashion. Generally, extreme ultraviolet lithography masks are reflective masks fabricated by depositing interference multilayers such as molybdenum and silicon in alternating layers. The very top ending layer is referred to as a capping layer. Typically a silicon layer is used as a capping layer. The thicker silicon capping layer is needed because of the mask patterning process control requirements. In the mask patterning process, the silicon capping layer serves as the etch stop layer for the buffer layer etch. During the buffer layer etch, when the etch selectivity to the multilayer capping layer is low, the capping layer is partially and non-uniformly removed. For example, one promising buffer layer for extreme ultraviolet lithography mask patterning is silicon dioxide. However, the etch selectivity to the silicon capping layer in a square mask etcher is rather low, for example, about 3 to 1. Thus, there is a need for better ways to make blanks for extreme ultraviolet lithography.
Brief Description of the Drawings Figure 1 is a partial, enlarged cross-sectional view of one embodiment of the present invention. Detailed Description An upper masking layer 18 and a lower masking layer 16 have an aperture 22. Radiation, indicated by the lines L, is reflected from the bottom of the aperture 22. The radiation may be extreme ultraviolet irradiation in one embodiment of the present invention. A pattern of a large number of apertures 22 may be transferred to a semiconductor wafer (not shown) by reflecting radiation from those apertures 22. The radiation is actually reflected from the capping layer 14 that, in one embodiment of the present invention, may be formed of ruthenium. In one embodiment, the layer 14 may be of a thickness of from about 1 to 4.5 nanometers and, particularly, greater than 2 nanometers. A ruthenium capping layer 14 is resistant to the oxidation. In addition, the etch selectivity of the buffer silicon dioxide layer to ruthenium is much larger than that of a silicon capping layer. The ruthenium layer also has better chemical cleaning resistance than a silicon capping layer. While ruthenium has a higher extreme ultraviolet absorption coefficient than silicon, a sufficiently thin ruthenium capping layer may be utilized without dramatically reducing the multilayer reflectivity. A ruthenium capping layer 14 of 2 nanometers may be susceptible to damage during mask patterning processes. However, a thicker ruthenium capping layer may reduce the multilayer reflectivity, and may produce a larger multilayer reflectivity variation, if the ruthenium capping layer happens to be non-uniform. The ruthenium capping layer 14 may be deposited over an interface layer 20. The interface layer 20 may be molybdenum or boron carbide, to mention two examples. The layer 20 may reduce or prevent inter-diffusion between the layers 14 and 22. In one embodiment, the layer 20 may be 5 Angstroms in thickness . A spacer layer 22, below the layer 20, may have a thickness between about 2.4 and about 3.8 nanometers in one embodiment of the present invention. In this range, the multilayer reflectivity variation, as a result of any ruthenium capping layer 14 thickness variation, may be controlled. Advantageously, the spacer layer 22 has lower extreme ultraviolet absorption. The spacer layer 22 may be silicon, in one embodiment. Below the layer 22 is the multilayer stack 12. In one embodiment, the multilayer stack includes a first layer of silicon of approximately 4.2 nanometers covered by a layer of molybdenum of 2.8 nanometers. This may be followed by another layer of silicon and thereafter another layer of molybdenum in one embodiment of the present invention. In some embodiments, optimizing the spacer layer 22 may enable the use of a thicker capping layer 14 that may be used to protect the multilayer stack 12 from damage from the patterning process steps. The optimized spacer layer 22 not only can optimize the peak multilayer reflectivity, but can also reduce or even minimize, for a given capping layer material and thickness, the multilayer reflectivity variation when the capping layer 14 is partially and non- uniformly removed. This may result in larger mask patterning process margins in some embodiments. For example, simulation indicates that with a standard multilayer stack (the spacer layer 22 having a standard silicon layer of 4.14 nanometers as used in the Mo/Si multilayer stack) and a very thin interface layer 20 (<5A) , the optimized capping layer 14 thickness is around 2 nanometers. This thickness provides maximum multilayer blank peak reflectivity of about 75 percent and minimum reflectivity variation of 0.5 percent when layer 14 thickness varies from 2-0.4 nanometers. However, this relatively thin capping layer 14 thickness gives rise to the problems with capping layers described above. To increase the capping layer 14 thickness beyond 2 nanometers without optimizing the spacer layer 22, the blank peak reflectivity will be reduced drastically as layer 14 thickness increases. The average reflectivity reduction per nanometer of capping layer 14 thickness increase for capping layer 14 thicknesses in the range of 2-4 nanometer is about 3.5 percent. As a result, larger reflectivity variation will result when the capping layer 14 thickness variation exists. However, with a 3.8 nanometer silicon spacer layer 22, the optimized capping layer 14 thickness can go up to 2.3 nanometers with only a slight increase in the multilayer blank peak reflectivity. The multilayer reflectivity variation is still within 0.5 percent when the capping layer 14 thickness variation is between 2.3-0.7 nanometers. Similarly, with a 2.9 nanometer silicon spacer 22, the optimized capping layer 14 thickness can go up to 3.3 nanometers with slight treadoff for the peak reflectivity (about 1.0 percent reflectivity loss). For maintaining the multilayer reflectivity variation within 0.5 percent, the capping layer 14 thickness variation can be between 3.3-1.7 nanometers. Finally, with a 2.4 nanometer silicon spacer 22, the optimized capping layer 14 thickness can go up to 3.8 nanometers, again with a small tradeoff for the peak reflectivity (about 2.5 percent reflectivity loss). The capping layer 14 thickness can vary from 3.8-2.4 nanometers with a reflectivity variation of less than 0.5 percent. Thus, it is clear that the optimization of the spacer layer 22 enables the use of a significantly thicker capping layer 14. In the actual multilayer fabrication, due to interlayer diffusion effect, the calculated optimized spacer thickness may deviate from that of experimentally obtained value.
However, the optimization theory/principle remains the same. While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention. What is claimed is:

Claims

1. A method comprising: forming an extreme ultraviolet lithography blank having a multilayer stack; forming a non-ruthenium spacer layer over said multilayer stack; and forming a ruthenium capping layer over said spacer layer.
2. The method of claim 1 wherein forming a non- ruthenium spacer layer over said multilayer stack includes forming a silicon spacer layer.
3. The method of claim 1 including providing a spacer layer having a thickness of at least about 2.4 nanometers.
4. The method of claim 1 including forming an interface layer between said non-ruthenium spacer layer and said ruthenium capping layer to prevent diffusion between said non-ruthenium spacer layer and said ruthenium capping layer.
5. The method of claim 4 including forming said interface layer at a thickness of about 5 Angstroms.
6. The method of claim 5 including forming said interface layer of molybdenum or boron carbide.
7. The method of claim 1 including forming said spacer layer between about 1 and about 4.5 nanometers in thickness .
8. The method of claim 1 including forming the ruthenium capping layer of a thickness greater than 2 nanometers .
9. The method of claim 1 including forming said capping layer of a thickness greater than 3 nanometers.
10. The method of claim 1 including forming said capping layer of approximately 3.8 nanometers.
11. An extreme ultraviolet lithography mask comprising: a multilayer stack; a non-ruthenium spacer layer over said multilayer stack; and a ruthenium capping layer over said spacer layer.
12. The mask of claim 11 wherein said spacer layer is formed of silicon.
13. The mask of claim 11 wherein said spacer layer has a thickness of at least about 2.4 nanometers.
14. The mask of claim 11 including an interface layer between said non-ruthenium spacer layer and said ruthenium capping layer to prevent diffusion between said non- ruthenium spacer layer and said ruthenium capping layer.
15. The mask of claim 14 wherein said interface layer has a thickness of about 5 Angstroms.
16. The mask of claim 15 wherein said interface layer is formed of molybdenum or boron carbide.
17. The mask of claim 11 wherein said spacer layer is between about 2.4 and about 3.8 nanometers in thickness.
18. The mask of claim 11 wherein said ruthenium capping layer has a thickness greater than 2 nanometers.
19. The mask of claim 11 wherein said capping layer has a thickness greater than 3 nanometers.
20. The mask of claim 11 wherein said capping layer has a thickness of approximately 3.8 nanometers.
21. An extreme ultraviolet lithograph mask comprising: a multilayer stack; a silicon spacer layer over said multilayer stack; and a ruthenium capping layer over said spacer layer, said capping layer having a thickness greater than 2 nanometers.
22. The mask of claim 21 wherein said spacer layer has a thickness of at least about 2.4 nanometers.
23. The mask of claim 21 including an interface layer between said spacer layer and said ruthenium capping layer to prevent diffusion between said spacer layer and said ruthenium capping layer.
24. The mask of claim 23 wherein said interface layer has a thickness of about 5 Angstroms.
25. The mask of claim 24 wherein said interface layer is formed of molybdenum or boron carbide.
26. The mask of claim 21 wherein said spacer layer is between about 2.4 and about 3.8 nanometers in thickness.
27. The mask of claim 21 wherein said capping layer has a thickness greater than 3 nanometers.
28. The mask of claim 21 wherein said capping layer has a thickness of approximately 3.8 nanometers.
PCT/US2004/023237 2003-07-31 2004-07-16 Multilayer reflective extreme ultraviolet lithography mask blanks Ceased WO2005013003A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04778644A EP1660941B1 (en) 2003-07-31 2004-07-16 Method of forming multilayer reflective extreme ultraviolet lithography mask blanks
AT04778644T ATE434777T1 (en) 2003-07-31 2004-07-16 METHOD OF PRODUCING MULTI-LAYER REFLECTIVE EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK E
DE602004021705T DE602004021705D1 (en) 2003-07-31 2004-07-16 METHOD OF MAKING MULTILAYER REFLECTIVE EXTREME ULTRAVIOLET LITHOGRAPHIC MASK PANELS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/631,171 2003-07-31
US10/631,171 US6998202B2 (en) 2003-07-31 2003-07-31 Multilayer reflective extreme ultraviolet lithography mask blanks

Publications (2)

Publication Number Publication Date
WO2005013003A2 true WO2005013003A2 (en) 2005-02-10
WO2005013003A3 WO2005013003A3 (en) 2005-08-11

Family

ID=34104031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/023237 Ceased WO2005013003A2 (en) 2003-07-31 2004-07-16 Multilayer reflective extreme ultraviolet lithography mask blanks

Country Status (8)

Country Link
US (1) US6998202B2 (en)
EP (1) EP1660941B1 (en)
KR (1) KR100802014B1 (en)
CN (1) CN1580957B (en)
AT (1) ATE434777T1 (en)
DE (1) DE602004021705D1 (en)
TW (1) TWI287171B (en)
WO (1) WO2005013003A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8722569B2 (en) * 2006-03-13 2014-05-13 E I Du Pont De Nemours And Company Peroxide decomposition catalyst particles
US8663866B2 (en) 2006-03-13 2014-03-04 E I Du Pont De Nemours And Company Stable proton exchange membranes and membrane electrode assemblies
TWI417647B (en) * 2006-06-08 2013-12-01 旭硝子股份有限公司 Reflective blank hood for EUV lithography and substrate for functional film
JP4910856B2 (en) * 2006-06-08 2012-04-04 旭硝子株式会社 Reflective mask blank for EUV lithography, and functional film substrate for the mask blank
JP5348866B2 (en) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 Mask manufacturing method
CN102687071B (en) * 2009-12-09 2013-12-11 旭硝子株式会社 Reflective-layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for producing reflective-layer-equipped substrate
US8679707B2 (en) * 2012-08-01 2014-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a lithography mask
US9341941B2 (en) 2013-08-01 2016-05-17 Samsung Electronics Co., Ltd. Reflective photomask blank, reflective photomask, and integrated circuit device manufactured by using reflective photomask
US9075316B2 (en) 2013-11-15 2015-07-07 Globalfoundries Inc. EUV mask for use during EUV photolithography processes
US20170017146A1 (en) * 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface
US10468149B2 (en) 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
KR102402767B1 (en) 2017-12-21 2022-05-26 삼성전자주식회사 EUV mask blank, photomask manufactured by using the EUV mask blank, lithography apparatus using the photomask and method of fabricating semiconductor device using the photomask

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
US6641959B2 (en) * 2001-08-09 2003-11-04 Intel Corporation Absorberless phase-shifting mask for EUV
US6607862B2 (en) * 2001-08-24 2003-08-19 Intel Corporation Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
DE10156366B4 (en) * 2001-11-16 2007-01-11 Infineon Technologies Ag Reflection mask and method of making the reflection mask
JP4158960B2 (en) 2002-02-25 2008-10-01 Ｈｏｙａ株式会社 Reflective mask blank for exposure and reflective mask for exposure
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
EP1394815B1 (en) 2002-08-28 2011-06-22 ASML Netherlands B.V. Lithographic apparatus comprising a Mo/Si-multilayer with capping layer
JP4825598B2 (en) * 2006-06-23 2011-11-30 株式会社ミツトヨ Calibration method for image measuring device

Also Published As

Publication number Publication date
DE602004021705D1 (en) 2009-08-06
CN1580957A (en) 2005-02-16
TWI287171B (en) 2007-09-21
EP1660941A2 (en) 2006-05-31
US6998202B2 (en) 2006-02-14
KR100802014B1 (en) 2008-02-12
TW200508789A (en) 2005-03-01
EP1660941B1 (en) 2009-06-24
ATE434777T1 (en) 2009-07-15
CN1580957B (en) 2010-05-26
US20050026046A1 (en) 2005-02-03
WO2005013003A3 (en) 2005-08-11
KR20060032211A (en) 2006-04-14

Similar Documents

Publication Publication Date Title
KR100455383B1 (en) Reflection photomask, method of fabricating reflection photomask and method of fabricating integrated circuit using the same
US10481484B2 (en) Reflective mask blank, reflective mask, method for manufacturing reflective mask blank, and method for manufacturing semiconductor device
TWI581054B (en) Mask structure and manufacturing method thereof
US6998202B2 (en) Multilayer reflective extreme ultraviolet lithography mask blanks
US20200371431A1 (en) Extreme ultraviolet mask with embedded absorber layer
KR102545187B1 (en) Reflective mask blank, reflective mask and method for manufacturing semiconductor device
KR102511751B1 (en) Blankmask and Photomask for Extreme Ultra-Violet Lithography
KR20130007533A (en) Optical member for use in euv lithography
KR20140085350A (en) Reflective mask blank for euv lithography, and process for its production
US8105735B2 (en) Reflective mask blank for EUV lithography and reflective mask for EUV lithography
WO2015012151A1 (en) Substrate with multilayered reflective film, reflective mask blank for euv lithography, reflective mask for euv lithography, process for producing same, and process for producing semiconductor device
JP7478208B2 (en) Reflective mask, and method for manufacturing a reflective mask blank and a semiconductor device
KR20220052908A (en) Mask blank, phase shift mask and manufacturing method of semiconductor device
KR102782121B1 (en) Mask blank, phase shift mask, method for manufacturing phase shift mask and method for manufacturing semiconductor device
KR20230071140A (en) Reflective Photomask Blanks and Reflective Photomasks
US20170235218A1 (en) Reflective element for mask blank and process for producing reflective element for mask blank
KR20240143902A (en) Reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
JP2000106343A (en) Method for manufacturing a semiconductor device
KR100801484B1 (en) Extreme ultraviolet exposure mask and manufacturing method thereof
KR20230148328A (en) Manufacturing method of multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and semiconductor device
KR102214777B1 (en) EUV lithography mask, and fabricating method of the same
KR20230173965A (en) Blankmask and Photomask for EUV lithography
WO2025089390A1 (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
KR20250151382A (en) Method for manufacturing reflective mask blanks, reflective masks, and semiconductor devices

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020067001935

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 547/DELNP/2006

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2004778644

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067001935

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004778644

Country of ref document: EP