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Apparatus and method for high speed scan for detection and measurement of properties of sub-wavelength defects and artifacts in semiconductor and mask metrology

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Publication number
WO2005008334A3
WO2005008334A3 PCT/US2004/021780 US2004021780W WO2005008334A3 WO 2005008334 A3 WO2005008334 A3 WO 2005008334A3 US 2004021780 W US2004021780 W US 2004021780W WO 2005008334 A3 WO2005008334 A3 WO 2005008334A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
beam
measurement
object
location
selected
Prior art date
Application number
PCT/US2004/021780
Other languages
French (fr)
Other versions
WO2005008334A2 (en )
Inventor
Henry Allen Hill
Original Assignee
Henry Allen Hill
Zetetic Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4709Backscatter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95676Masks, reticles, shadow masks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction

Abstract

A method of detecting defects or artifacts on or in an object, wherein the defects or artifacts are characterized by a characteristic dimension, the method involving: generating an input beam for illuminating a spot at a selected location on or in the object, wherein the spot has a size L that is substantially larger than the characteristic dimension; deriving a measurement beam and a reference beam from the input beam; directing the measurement beam onto the object as an incident measurement beam that illuminates the spot at that selected location on or in the object to produce a backscattered measurement beam; interfering the backscattered measurement beam with the reference beam to produce an interference beam, the reference beam being oriented relative to the backscattered measurement beam so as to produce a peak sensitivity for a portion of the backscattered measurement beam that emanates from the object at a predetermined diffraction angle; converting the interference beam for that selected location into an interference signal; and using the interference signal for that selected location to determine whether any defects or artifacts characterized by said characteristic dimension are present anywhere within a region on or in the object defined by the spot at that selected location.
PCT/US2004/021780 2003-07-07 2004-07-07 Apparatus and method for high speed scan for detection and measurement of properties of sub-wavelength defects and artifacts in semiconductor and mask metrology WO2005008334A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US48550703 true 2003-07-07 2003-07-07
US60/485,507 2003-07-07

Publications (2)

Publication Number Publication Date
WO2005008334A2 true WO2005008334A2 (en) 2005-01-27
WO2005008334A3 true true WO2005008334A3 (en) 2005-07-14

Family

ID=34079135

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/021780 WO2005008334A3 (en) 2003-07-07 2004-07-07 Apparatus and method for high speed scan for detection and measurement of properties of sub-wavelength defects and artifacts in semiconductor and mask metrology

Country Status (2)

Country Link
US (1) US7084984B2 (en)
WO (1) WO2005008334A3 (en)

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WO2005033747A3 (en) * 2003-10-01 2007-05-31 Zetetic Inst Method and apparatus for enhanced resolution of high spatial frequency components of images using standing wave beams in non-interferometric and interferometric microscopy
US7345771B2 (en) 2004-05-06 2008-03-18 Zetetic Institute Apparatus and method for measurement of critical dimensions of features and detection of defects in UV, VUV, and EUV lithography masks
WO2005114095A3 (en) * 2004-05-21 2008-03-27 Zetetic Inst Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
KR100589584B1 (en) * 2004-06-24 2006-06-14 주식회사 대우일렉트로닉스 Method for compensating image on occasion of pixel misalign in a hdds
WO2006023406A3 (en) * 2004-08-16 2006-12-21 Zetetic Inst Apparatus and method for joint and time delayed measurements of components of conjugated quadratures of fields of reflected/scattered and transmitted/scattered beams by an object in interferometry
WO2006023612A3 (en) * 2004-08-19 2006-12-28 Henry A Hill Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
US7145663B2 (en) * 2004-09-20 2006-12-05 Zetetic Institute Catoptric imaging systems comprising pellicle and/or aperture-array beam-splitters and non-adaptive and/or adaptive catoptric surfaces
US7508527B2 (en) * 2005-04-11 2009-03-24 Zetetic Institute Apparatus and method of in situ and ex situ measurement of spatial impulse response of an optical system using phase-shifting point-diffraction interferometry
JP2008541130A (en) * 2005-05-18 2008-11-20 ゼテテック インスティテュート Apparatus and method for measuring optical system flare except situ and in situ

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Also Published As

Publication number Publication date Type
US7084984B2 (en) 2006-08-01 grant
WO2005008334A2 (en) 2005-01-27 application
US20050036149A1 (en) 2005-02-17 application

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