WO2004110116A1 - Production method for feedthrough electrode-carrying substrate - Google Patents

Production method for feedthrough electrode-carrying substrate Download PDF

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Publication number
WO2004110116A1
WO2004110116A1 PCT/JP2004/007354 JP2004007354W WO2004110116A1 WO 2004110116 A1 WO2004110116 A1 WO 2004110116A1 JP 2004007354 W JP2004007354 W JP 2004007354W WO 2004110116 A1 WO2004110116 A1 WO 2004110116A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive paste
substrate
base material
hole
insulating base
Prior art date
Application number
PCT/JP2004/007354
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuhito Takeuchi
Satoshi Yamaguchi
Original Assignee
Hitachi Metals, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003157723A external-priority patent/JP2004363212A/en
Priority claimed from JP2003159002A external-priority patent/JP3627932B2/en
Priority claimed from JP2003180477A external-priority patent/JP2005019576A/en
Application filed by Hitachi Metals, Ltd. filed Critical Hitachi Metals, Ltd.
Publication of WO2004110116A1 publication Critical patent/WO2004110116A1/en

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/025Abrading, e.g. grinding or sand blasting

Definitions

  • the present invention relates to a method for manufacturing a substrate with a through electrode, which can stably obtain an electrode having excellent electrical conduction.
  • a lead wire is taken out from a sensor chip manufactured by a wafer process on an insulating substrate, a metal wire is attached to an electrode terminal of the sensor chip by ultrasonic bonding, or a flexible cable having a pattern formed is used. Soldering is commonly used. If a through-electrode can be formed on the wiring board, the sensor terminals can be formed on the insulating substrate by connecting the electrode terminals on the back side of one sensor chip to the through-electrode. It is not necessary to form a pad, and the sensor chip size can be reduced.
  • the sensor chip surface can be brought closer to the target of sensing, so that the sensitivity of the sensor can be improved. Furthermore, if the sensing target is a flat surface, the sensor can be slid.
  • a substrate with a through electrode is a very useful substrate for manufacturing a sensor chip because of the advantages described above.
  • a through hole is formed in the insulating substrate, and the through hole is filled with a conductive paste and cured to form a substrate with a through electrode.
  • An insulator such as ceramics, glass, or resin is used as the insulating base material.
  • a conductive paste that is cured at a temperature equal to or lower than the heat resistant temperature of the insulating base material is used.
  • the insulating base material may be cracked by the force S that can insert the plastically deformed metal into the through-hole and the force when the metal is inserted. Les ,.
  • the force S that can fill the through hole with metal by plating, the seed layer for plating must be formed in advance because the base material is insulating, and the process becomes complicated, which is not desirable. ,. It is generally employed to form an electrode by filling a conductive paste into an insulating base material having through holes formed therein.
  • the conductive paste is composed of conductive powder particles called a filler and a liquid binder. Select a binder with appropriate components to control the curing temperature of the conductive paste.
  • the conductive paste used to form electrodes for multilayer ceramic electronic components uses glass as a binder, and therefore requires firing at a temperature of around 900 ° C for curing.
  • a thermosetting conductive paste using a thermosetting resin such as epoxy as a binder can be cured at a temperature of about 200 ° C. If a thermosetting conductive paste is used, the conductive paste can be cured even with a simple device such as an electric oven, and an insulating base material made of a material having a low heat-resistant temperature can be used.
  • a peeling plate such as a doctor blade is usually used for filling a conductive paste into a through hole formed in an insulating base material.
  • the conductive paste applied to the surface of the base material is filled into the through-hole while being scraped off with a doctor blade, so part of the conductive paste near the tip of the through-hole is removed, and the conductive paste filled in the through-hole is recessed at the tip. May occur.
  • Japanese Patent Application Laid-Open Publication No. 2001-160684 discloses a technique in which a roller is rolled on an insulating base material to fill the through-hole with pressure while applying a conductive paste. According to the technology disclosed in the Japanese Patent, since the conductive paste can be filled into the through-hole while reducing the pressure, the occurrence of a depression on the conductive paste filled in the through-hole can be prevented. be able to.
  • the through electrodes provided on the insulating substrate have good conductivity and no conduction failure. Since the penetrating electrode is made by heating and curing a conductive paste obtained by mixing a conductive filler powder and a binder resin, the conduction of the penetrating electrode sometimes becomes poor during the heating and curing. Even if the technology disclosed in the above-mentioned Japanese Patent Publication is used, in order to eliminate the conduction failure of the through electrode, an extremely large pressure is applied to the conductive paste when filling the through-hole with the conductive paste. In addition to this, it was necessary to squeeze excess binder resin and discharge it out of the through-hole. Disclosure of the invention
  • the present invention does not require a special device for forcibly discharging excess binder resin to the surface of the insulating base material.
  • a through hole is formed in an insulating base material, a thermosetting conductive paste is filled in the through hole, and a height of 50 / m from both ends of the through hole.
  • a thermosetting conductive paste is filled in the through hole, and a height of 50 / m from both ends of the through hole.
  • the process power is removed from both surfaces of the insulating base material to remove 3 / im—50 ⁇ m on one side from the surface of the insulating base material.
  • the through hole preferably has a diameter of 30 ⁇ m—800 ⁇ m.
  • Ceramics, glass, resin, or a composite material thereof can be used as an insulating substrate used for manufacturing a substrate with a through electrode.
  • the insulating substrate is 300 ⁇ m 2 mm thick.
  • the insulating substrate is 300 ⁇ m 2 mm thick.
  • For substrates with a thickness of less than 300 x m cracking or chipping occurs during handling during processing or chip mounting after processing, and it is difficult to obtain a substrate with a through-electrode that is immediately strong.
  • the thermosetting conductive paste used in the production method of the present invention is preferably composed of 8593% by mass of the filler powder and the balance substantially of the thermosetting binder resin.
  • the thermosetting binder resin preferably contains a liquid epoxy resin having two or more epoxy groups as a main component.
  • the filler powder is preferably made of conductive powder particles having an average particle size of 1.O xm or more and 20 zm or less.
  • the average particle diameter of the filler particles is preferably 1.0 / im—8.0 / im for spherical particles.
  • the average particle diameter of the filler powder is 3.0 / im—20 / im for flake particles. preferable.
  • thermosetting conductive paste preferably further contains 0.2% by mass to 3.0% by mass of a curing agent and 1.0% by mass or less of a dispersant.
  • the through-hole has a height of 1/20 or more of the average particle diameter of the filler powder particles contained in the thermosetting conductive paste to be filled with unevenness of the surface roughness in 30% or more of the inner wall surface of the through-hole. It is preferable that the pitch of the unevenness of the surface roughness is not less than the average particle diameter while having a difference.
  • the through-hole may have a local minimum value of the diameter smaller than the diameter of each opening at both ends, and the local minimum value may be larger than eight times the average particle size of the filler particles. preferable. It is further preferred that the minimum value is less than 90% of the diameter of the opening on the smaller side of the opening at both ends. Then, the minimum value is preferably larger than 80 zm.
  • the through-hole may be such that the center axes of the openings at both ends thereof are eccentric to each other, and the amount of eccentricity is preferably larger than the difference between the radii of the two openings.
  • FIG. 1 is a schematic view for explaining a method for manufacturing a substrate with through electrodes
  • FIG. 1 (A) is a perspective view showing an insulating base material used in the manufacturing method of the present invention
  • FIG. (B) is a perspective view of the insulating base material with a through hole
  • FIG. 1 (C) is a cross-sectional view of the insulating base material shown in FIG. 1 (B) along the line 1C-1C
  • FIG. 1 (D) is Fig. 1 (C) is a cross-sectional view of the insulating base material in which the conductive paste is filled into the through holes of the insulating base material. The heights H and H 'of the conductive paste projecting from both end surfaces of the base material are shown.
  • FIG. 1E is a cross-sectional view showing the processing amounts W, W from both end surfaces of the insulating base material filled with the conductive paste.
  • FIG. 2 is a schematic cross-sectional view for explaining a cross section of a conductive paste filled and solidified in a through hole formed in an insulating base material.
  • FIG. 3 is a schematic cross-sectional view for explaining a state in which a conductive paste filled in a through hole formed in an insulating base material is solidified when heated.
  • FIG. 4 is an enlarged cross-sectional view of a through hole formed in an insulating base material that can be used in the present invention.
  • FIG. 5 is an explanatory enlarged sectional view of a wall surface of a through hole.
  • FIG. 6 is a plan view of a wiring substrate having a GMR element formed on a substrate with through electrodes.
  • FIG. 7 is a rear view of the wiring board of FIG. 6.
  • FIG. 8 is a graph showing the relationship between the slack occurrence rate (%) of the through electrode and the ratio (%) of the through hole uneven portion.
  • FIG. 9 is an enlarged cross-sectional view of another through hole formed in an insulating base material that can be used in the present invention. is there.
  • FIG. 10 is an enlarged cross-sectional view of still another through-hole formed in an insulating substrate that can be used in the present invention.
  • an insulating substrate 10 shown in a perspective view in FIG. 1A is used.
  • the base material ceramics, glass, resin, or a composite material thereof can be used.
  • the substrate 10 preferably has a thickness of 300 zm-2 mm.
  • the through electrode formed by filling the through-hole formed in the base material 10 with the conductive paste does not cause a conduction failure, but 300 zm Since a thinner substrate has too low mechanical strength and may break during handling, it is desirable to use a substrate 10 having a thickness of 300 zm or more. If the thickness of the base material 10 is more than 2 mm, as will be described in the later examples, even if the present invention is applied, conduction failure may occur in the through-electrode. It is desirable that:
  • the insulating base material is preferably ceramics, glass, resin, or a composite material of these materials, which has a proven track record for use in electronic components and is easy to mold and has the required strength. From the viewpoint of maintaining the electrical insulation between the electrodes and preventing the occurrence of a short circuit between the electrodes due to the migration of the electorifice, it is desirable that the volume resistivity indicating the insulating property of the insulating base material is 101 Q ⁇ cm or more. Since the curing temperature of the conductive paste is around 200 ° C, it is more desirable for the insulating base material to have a softening temperature of 250 ° C or higher, preferably 300 ° C or higher. Specific examples of ceramics include anoremina, zirconia, silica, BaTiO, CaTiO, Ni
  • Zn fluoride or the like can be used.
  • glass soda glass, borosilicate glass, lead glass , Quartz glass, crystallized glass and the like can be used.
  • resin polyimide, polycarbonate, polyethersulfone (PES), polysulfone, or the like can be used, and as the composite material, ceramic glass composite material, glass epoxy, or the like can be used.
  • a through hole 12 is formed in the insulating base material 10.
  • the through hole 12 of the insulating substrate 10 can be formed by a laser, shot blast, punch, drill, etching, embedding, or the like, which is desired to be easily and accurately formed industrially.
  • shot blasting and etching are desirable because a large number of through holes can be simultaneously formed in the insulating base material.
  • the diameter of the through-hole is desirably 30 zm or more and 800 zm or less. It is difficult to uniformly fill the conductive paste, which is difficult to form easily and stably, with a through hole having a diameter of less than 0 x m.
  • a through-hole having a diameter larger than 800 zm is not desirable because it has problems such as leakage of the conductive paste between the time of filling the conductive paste and the time of curing.
  • the through hole is not limited to a circle, but may be a square, an ellipse, or an indefinite shape. These diameters are defined by the diagonal line for a rectangle, the major axis for an ellipse, and the average length of the shortest and longest diagonal lines for irregular shapes.
  • thermosetting conductive paste 30 is filled in the through holes 12 shown in FIGS. 1 (B) and 1 (C) as shown in the cross-sectional view of FIG. A protruding portion is formed from a thermosetting conductive paste 30 from the opening. Then, the thermosetting conductive paste 30 filled in the through holes 12 is cured by heating.
  • thermosetting conductive paste 30 In order to fill the through-holes 12 formed in the insulating base material 10 with the thermosetting conductive paste 30, a method of injecting the conductive paste into each hole, or a method of applying pressure to the conductive paste applied on the insulating base material, is used. And a method of extruding the conductive paste from all the through holes 12 of the insulating base material, or a screen printing method. If screen printing is used, it is possible to simultaneously fill the conductive paste 30 into all of the many through holes arranged and formed in the insulating base material 10 in a precise pattern. In addition, unnecessary conductive paste can be prevented from adhering to the surface of the insulating base material.
  • the protrusion height of the conductive paste is set on the filling amount of the conductive paste and the back surface of the insulating base material. Precise control can be achieved by spacing with the stopper sheet to be set.
  • the protrusion height H of the protrusion 32 when the thermosetting conductive paste 30 is filled in the through-hole 12 provided in the insulating base material 10 be not less than 50 ⁇ m and not more than 200 ⁇ m. If the protruding height of the conductive paste is less than 50 ⁇ m, a region having a low filler powder concentration cannot be completely removed by processing, and an electrode with poor conduction may be generated in the substrate 100 with through electrodes. Further, if the protruding height H of the protruding portion 32 of the conductive paste 30 is larger than 200 ⁇ m, the amount of the conductive paste to be removed by the processing increases, and the processing time which is economical is long. In order to more reliably remove the region where the filler powder concentration is low and use the conductive paste more economically, the protrusion height H of the conductive paste protrusion 32 should be 70 am or more and 100 ⁇ m or less. desirable.
  • the thermosetting conductive paste 30 used in the present invention preferably contains 85% to 93% by mass of the filler powder and the balance substantially of the thermosetting conductive binder resin.
  • the conductive paste may further include a curing agent and a dispersant.
  • the binder resin contains as a main component a liquid epoxy resin having two or more epoxy groups, and the filler powder preferably contains conductive powder particles having an average particle size of 1.0 ⁇ m or more and 20 ⁇ m or less as the main component.
  • a liquid epoxy resin is used as a binder resin containing a liquid epoxy resin having two or more epoxy groups as a main component, a conductive paste can be formed even at a low temperature of around 200 ° C by selecting an appropriate curing agent. It can be cured. If the curing temperature is low, a simple device such as an electric oven can be used. Further, even a material having a low heat resistance temperature can be used as an insulating substrate.
  • Liquid epoxy resins having two or more epoxy groups include bisphenol A type epoxy resin, bisphenol F type epoxy resin, alicyclic epoxy resin, amine type epoxy resin, naphthalene skeleton epoxy resin, and dimer acid.
  • glycidinole ester epoxy resins have low viscosity and have flexibility after curing. By mixing and using these resins, it is possible to increase the reliability of the conductive paste against thermal cycling. Reliable for thermal cycling In the case of a low conductive paste, the contact state between the filler powder particles changes due to expansion and contraction due to heat, and the electric resistance may change.
  • the curing agent added to the binder resin, when mixed with the epoxy resin, can be stored at room temperature for a long time without changing its properties, and has a property of rapidly curing when heated to a predetermined temperature or more. It is desirable to have.
  • the curing agent include amine-based curing agents such as dicyandiamide-carboxylic acid hydrazide, and imidazole-based curing agents such as 2-ethyl-4-methylimidazole, phthalic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, and the like.
  • Acid anhydride-based curing agents such as methylnadic anhydride, and aromatic amine-based (amine adduct) curing agents such as diaminodiphenylmethane and diaminodiphenylsulfonic acid lj, 3_ (3,4-dichlorophenol)
  • Urea-based curing agents such as 1,1-dimethylurea, cationic catalyst-based curing agents, phenol-based curing agents and the like can be used.
  • the amount of the curing agent added is preferably 0.2% by mass to 3.0% by mass relative to the conductive paste. If the curing agent is added in excess of 3.0% by mass, the viscosity of the conductive paste increases, making it difficult to fill the through-hole. If the amount is less than 0.2% by mass, the resin may not be cured.
  • the dispersant is preferably added because it has the effect of lowering the viscosity of the conductive paste and assisting the filling of the through-hole.
  • the dispersing agent include higher fatty acid ethylene oxide, propylene oxide addition esterified product, ester compound of sorbitan and fatty acid, polyhydric alcohol ethylene oxide such as sorbitan, propylene oxide addition ether compound, alkyl benzene ethylene oxide, and the like.
  • Nonionic dispersants such as propylene oxide adducts, alkali salts of alkyl benzene sulfonic acid, alkali salts of higher alcohol sulfates, phosphoric acid ester compounds, higher fatty acids, ethylene oxides of higher fatty acids, and petroleum products with propylene oxide
  • Anionic dispersants such as sulfate alkali salts, and cationic dispersants such as quaternary ammonium salt types can be used.
  • the amount of the dispersant added is desirably 1.0% by mass or less relative to the conductive paste. If the dispersant is added in excess of 1.0% by mass, the viscosity of the conductive paste is too low, which is not desirable.
  • the filler powder conductive powder particles of noble metal, base metal, carbon and the like can be used.
  • a filler powder material having a small electric resistance.
  • the material may be used lead volume resistivity of not more than 20 X 10- 6 ⁇ cm, platinum, tungsten, nickel, tin, zinc, metals such as iron material whose main component.
  • base metal powder particles coated with a noble metal can be used.
  • filler powder particles in which the surface of copper powder particles that are easily oxidized are coated with silver are desirable because they exhibit the same electrical resistance as silver powder particles and are economical.
  • the shape of the filler powder particles should be spherical, elliptical, hexahedral or octahedral or more polyhedral, plate-like, flake-like, needle-like, amorphous, or a combination thereof. Is possible. It is also possible to use not a single particle but a particle obtained by combining a plurality of particles. Spherical or flake-shaped particles can be produced by an industrially easy method such as an atomizing method or a reducing method, and thus have a more desirable shape as filler powder particles.
  • the average particle diameter of the filler powder particles is: 1. O / im-20 / im is preferred. If the particle shape is spherical, it is 1.0 ⁇ m or more and 8.0 ⁇ m or less. Is preferably not less than 3.0 ⁇ m and not more than 20 ⁇ m.
  • the particle size of the filler powder particles was measured by observing a small amount of filler powder particles adhered to the conductive adhesive tape with a scanning electron microscope. The longest diameter of each particle measured from the observation image is defined as the particle diameter, and the average value of the particle diameters of all the particles included in an arbitrary observation field is defined as the average particle diameter.
  • a filler powder having an average particle size smaller than the above range has a large specific surface area with respect to the volume, so that the particles are easily oxidized, which is not desirable.
  • the contact resistance tends to increase.
  • a filler powder having an average particle diameter larger than the above range is not desirable because conversely, the number of contact points between the particles is reduced and the electric resistance is increased, and the reliability with respect to the thermal cycle after the conductive paste is cured is lowered.
  • the flake-like filler powder tends to have a higher viscosity at the same mixed weight than the spherical filler powder, so that screen printing becomes difficult. Therefore, it is necessary to change the conditions of screen printing.
  • Spherical filler powder particles, flaked filler powder particles, and filler powder particles of other shapes may be mixed and used. By mixing, excellent adhesion between the flake filler powder particles with low contact resistance and the insulating substrate It is possible to make use of the advantages of the spherical filler powder particles.
  • the mixing amount of the filler powder with respect to the conductive paste is desirably 85% by mass or more and 93% by mass or less with respect to the conductive paste. If the mixing amount of the filler powder is less than 85% by mass, the number of contacts between the filler powder particles after curing of the conductive paste decreases and the electric resistance increases, and the reliability with respect to the thermal cycle after curing of the conductive paste decreases. Desirable les ,. If the mixing amount of the filler powder is more than 93% by mass, the viscosity of the conductive paste becomes high, which makes it difficult to fill the through-holes. In order to obtain an electrode with high reliability in thermal cycles as soon as it is filled into the through-holes, it is more preferable that the mixing amount of the filler powder with respect to the conductive paste is 90% by mass to 92% by mass.
  • the protrusions 32 of the thermosetting conductive paste 30 protruding from both end surfaces of the insulating base material 10 are applied from both end surfaces of the insulating base material 10. Then, 3 ⁇ 50 ⁇ m is removed from one side of the surface of the insulating base material 10 to obtain the substrate 100 having the through electrodes 30a.
  • the processing of the insulating base material 10 it is desirable to process it into a smooth surface by grinding or lapping. By smoothing the surface of the substrate 100 with through electrodes, it is possible to form a fine wiring pattern with high accuracy by photolithography. It is desirable that the processing amount W, W 'of one side of the insulating base material be 3 ⁇ m or more and 50 ⁇ m or less. If the processing amount is less than 3 ⁇ m, it will be difficult to process the entire surface of the insulating base material on average, and there will be portions that cannot be completely removed by processing in the region with low filler powder concentration. There is a possibility that through electrodes with poor conduction may occur. If the processing amount exceeds 50 ⁇ , not only is the processing time prolonged, but also a thick insulating base material must be used, which increases the manufacturing cost and is not preferable.
  • thermosetting conductive paste 30 When observing the inside of the thermosetting conductive paste 30 filled in the through holes 12 of the insulating base material 10, as shown in FIG.
  • regions 36 having a lower filler powder concentration than the surface layer 34 and the inside 38 of the cured conductive paste 30 are formed on both end surfaces of the substrate 10.
  • both sides of the insulating base material 10 including the protrusions 32 of the thermosetting conductive paste 30 are included. Since surface force processing is performed to remove 3 ⁇ m – 50 ⁇ m on one side from the surface, as shown in Fig. 2 (B), it is possible to remove the area 36 where the filler powder concentration is low. Therefore, the through-electrode 30a of the through-electrode-attached substrate 100 obtained by the present invention has less conduction failure.
  • the binder resin of the conductive paste 30 has a large coefficient of thermal expansion and a high fluidity as compared with the filler powder particles, and thus easily oozes from the inside of the conductive paste to the outside during thermosetting.
  • the filler powder particles agglomerate with each other at the time of thermal curing, and the exudation of the binder resin is easily promoted.
  • the thickness of the insulating base material 10 is increased, the heating of each portion of the filled conductive base 30 becomes uneven, and as soon as the surface layer 34 of the conductive paste 30 is hardened first. It is presumed that a region 36 having a low filler powder concentration is formed due to the above reasons.
  • the uncured conductive paste 30 filled in the through holes 12 of the insulating base material 10 shown in FIG. 3A starts to be cured by being exposed to the heat of an electric oven.
  • the surface layer 34 shown in Fig. 3 (B) is rapidly cured by the direct heat radiation 42 from the electric oven, which transfers heat to the inside of the conductive paste 30 because the insulating base material 10 is thick.
  • an initial hardened layer is formed. It is considered that when the surface layer 34 is cured, the binder resin does not exude due to thermal expansion, and is cured while maintaining the ratio of the filler powder and the binder resin substantially at the time of filling.
  • the heating of the insulating base material 10 progresses, heat is transmitted to the conductive paste 30 through the side wall of the through-hole as indicated by the solid arrow 44, and the inside of the paste starts to cure.
  • the inside of the conductive paste 30 is hardened gently by heat conduction, the binder resin expanded by heat is hardened while seeping out with the surface layer 34, and as shown in FIG. It is considered that a region 36 having a low powder concentration is formed. In the region 36 where the filler powder concentration is low, the contact between the filler powder particles is small, so that the current path becomes narrow and the electric resistance rises.
  • the protrusions 32 of the conductive paste 30 and 3 ⁇ m to 50 ⁇ m are removed from the surface of the substrate 10, the region 36 having a low filler powder concentration is removed.
  • a through-hole was formed in the substrate, and a conductive paste was filled in the through-hole and cured to produce a substrate with a through-electrode.
  • the polyimide substrate was a 100 mm square, 1.5 mm thick and 3. Omm thick.
  • the glass-epoxy resin substrate was a square of 120 mm square and had a thickness of 2. Omm and 2.4 mm.
  • Two types of through holes with a diameter of 200 zm and a diameter of 400 zm were formed with a micro drilling machine using an NC drill. These through holes were formed at equal intervals of 2 mm pitch.
  • the conductive paste was a 1: 1 (mass ratio) mixture of bisphenol A type epoxy resin (Epicoat 828 Yuka Shell Epoxy) and alicyclic epoxy resin (ST-1000 manufactured by Toto Kasei) as binder resins.
  • An amine-adduct-based curing agent (MY-24, manufactured by Ajinomoto Co.) was used as a curing agent, and a phosphate ester (anionic surfactant "Blysurf" manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) was used as a dispersing agent.
  • the curing agent and the dispersant were added in an amount of 0.2% by mass and 0.2% by mass, respectively, based on the conductive paste.
  • Spherical silver particles having an average particle size of 2.1 / m were used as the filler powder, and 90.5% by mass of the conductive paste was added.
  • These binder resin and filler powder were stirred and kneaded while defoaming with a three-roll mill.
  • the viscosity of the kneaded conductive paste was 130 0 to 1400 Pa's (at a rotation speed of 0.5 RPS) as measured by an E-type viscometer at room temperature.
  • the through-hole was filled with a conductive paste using a screen printer so that the protrusion heights H and H ′ of the protrusions 32 shown in FIG. 1 (D) were both 100 ⁇ m.
  • the conductive paste was cured by heating in an electric oven at 200 ° C for 60 minutes. Then, to obtain a processed amount W, lapping process to a substrate with through electrodes 100 on both sides of the insulating base 10 as W f are both 20 mu m shown in FIG. 1 (E).
  • the resistance between both ends was measured for 1000 through electrodes manufactured under each condition.
  • the resistance evaluation results are shown in Table 1 together with the manufacturing conditions (base material, base material thickness, through-hole diameter).
  • insulating base material made of sintered alumina ceramics having a purity of 96% and an alkali-free glass (# 1737 made by Koingen Co., Ltd.) insulating base material
  • conductive paste protruding into the through-holes The substrates with penetrating electrodes were manufactured by changing the protruding height H of the part and the processing amount W of the substrate, and the penetrating electrodes of those substrates were evaluated.
  • the alumina substrate was a 75 mm diameter disk with a thickness of 1. Omm
  • the alkali-free glass substrate was a 150 mm diameter disk with a thickness of 0.7 mm.
  • Circular through holes with a diameter of 150 ⁇ m were formed on the alumina substrate with a carbon dioxide laser beam machine, and circular holes with a diameter of 200 m were formed on the non-alkali glass substrate with a resist mask and shot blasting.
  • the through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible could be formed in each of the 1000 through-holes for each condition, and a substrate with through-electrodes was manufactured.
  • the same conductive paste as in Example 1 was used.
  • the through-hole was filled with the conductive paste by using a screen printing machine while changing the protrusion height H as shown in Table 2.
  • the protrusion height H 'of the conductive paste on the back side of the insulating base material was adjusted to 100 ⁇ m by adjusting the spacer of the screen printing machine.
  • the conductive paste was heated and cured at 200 ° C. for 60 minutes using an electric oven, and then wrapped by changing the surface processing amount W of the insulating base material to obtain a substrate with through electrodes. At this time, insulation
  • the amount of processing W 'on the back side of the substrate was set to 20 ⁇ .
  • the method of forming the through hole was changed to change the diameter of the through hole, and a substrate with a through electrode was manufactured.
  • the through electrodes were evaluated.
  • the alumina substrate was a 75 mm disk with a thickness of 0.6 mni
  • the polyimide substrate was a 100 mm square square with a thickness of 1.5 mm.
  • a carbon dioxide gas / one-piece processing machine was used for the alumina base material, and a punching machine using a punch was used for the polyimide base material.
  • the through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible were formed for each of the 1000 through-holes in each condition so that through-electrodes could be formed, and a substrate with through-electrodes was manufactured.
  • the same conductive paste as in Example 1 was used. Through hole Use a screen printer to fill the strike, and project the filled conductive paste. Filling was performed so that both heights H and H 'were 100 ⁇ ⁇ . After the conductive paste is cured by heating by using an electric oven at 200 ° C 60 min, surface treatment amount W of the insulating base, W 'force S Rappuka ⁇ E surface together so that the 20 beta m Thus, a substrate with a through electrode was obtained.
  • the resistance between both ends was measured for 1000 through electrodes under each condition.
  • Table 3 shows the resistance evaluation results together with the manufacturing conditions (base material, through-hole diameter).
  • base material base material having a through hole diameter
  • a large listening resistance was 70% or more of all the through electrodes .
  • Most of them were electrodes with no electrical conduction and could not be used as penetrating electrodes. This is presumably because the diameter of the through-hole was too small to fill the conductive paste uniformly.
  • a through-hole is opened, and the material of the filler powder contained in the conductive paste filled in the through-hole and the shape and its flatness
  • a substrate with a through electrode was manufactured by changing the uniform particle size, and the through electrode of the substrate was evaluated.
  • the insulating base material was a 150 mm diameter disk with a thickness of 0.7 mm. After forming a resist mask on a glass substrate, shot blasting was applied to form a circular through hole having a diameter of 200 ⁇ .
  • the through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible were formed for each of the 1000 through-holes in each condition, and a substrate with a through-electrode was produced.
  • the conductive paste is a mixture of bisphenol F-type epoxy resin (Epicoat 807 Yuka Shell Epoxy Co.) and epoxy resin obtained by esterifying dimer acid with darcidinole (epoxy equivalent: 400-50 Og / eq) as binder resin. The mixing ratio was adjusted such that the final viscosity of the conductive paste was 12OO-13OOPa-s (0.53 ⁇ 4O. 5RPS) at room temperature as evaluated by an E-type viscometer.
  • Dicyandiamide (DICY7 Yuka Shell Epoxy Co., Ltd.) was used as a curing agent, and an anionic surfactant (manufactured by Daiichigo Daiichi Kogyo Co., Ltd.) was used as a dispersant.
  • the hardener and the dispersant were added in an amount of 1.0% by mass and 0.3% by mass, respectively, relative to the conductive paste.
  • Filler powders having different average particle diameters shown in Table 4 were used, and 90.5% by mass was added to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with a three-roll mill.
  • the conductive paste was filled into the through holes using a screen printer so that the heights H and H 'of the filled conductive paste protrusions were both 100 ⁇ .
  • the conductive paste was cured by heating at 200 ° C. for 60 minutes using an electric oven. Both surfaces of the insulating substrate were wrapped so that the weights W and ′ of the insulating substrate were both 20 ⁇ m, to obtain a substrate with through electrodes.
  • the resistance between both ends was measured for 1000 through electrodes under each condition.
  • the results of the resistance evaluation are shown in Table 4 together with the manufacturing conditions (filament powder type, average particle size) and the results of the heat cycle test described below.
  • the penetrating electrodes accounted for more than 70% of all penetrating electrodes.
  • the resistance evaluation result is “impossible”. This is considered to be due to the fact that the filler powder particles were small and the surface of the particles was covered with resin, resulting in less contact between the particles.
  • all the through electrodes showed the conversion to the resistance of the following 2 X 10- 4 ⁇ cm volume resistivity, the electrical conduction are formed good through electrode was confirmed.
  • volume resistivity is equal to or less than 2 X 10- 4 Q cm, between -55 ° C and 125 ° C held to between those temperatures, respectively 30 minutes
  • a heat cycle test in which heating and cooling were repeated 1000 times was performed. 8.
  • the resistance increase by the heat cycle test was 3% or more. In such a large filler powder particle, the contact between particles is reduced, so that the reliability of the through electrode with respect to the thermal cycle is reduced.
  • Average particle diameter 1.O xm or more 8.
  • the conductive paste is filled into the through holes so that the protruding height H from the surface of the insulating base material is 50 ⁇ m or more and 200 ⁇ m or less.
  • the electrical conduction of all the through-electrodes was improved, and a change in resistance in a thermal cycle test was small.
  • a substrate with a through electrode manufactured using the manufacturing conditions of the present invention and further changing the manufacturing conditions will be described below.
  • a substrate with through electrodes was manufactured using sintered alumina ceramics having a purity of 96% as an insulating base material.
  • the insulating base material had a volume resistivity of 1 ⁇ 10 ⁇ ⁇ ⁇ and a disk having a diameter of 75 mm and a thickness of 1.0 mm.
  • Circular through holes with a diameter of 150 / im were formed at equal intervals of 2 mm using a carbon dioxide laser processing machine.
  • the same conductive paste as in Example 1 was used. The conductive paste was filled into the through holes using a screen printer so that the conductive paste protrusion height H and H 'force S were both 100 ⁇ m.
  • the conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then the surface of the insulating substrate is lapped so that the processing amounts W and Wr are both 20 ⁇ m.
  • a substrate with a through electrode having a thickness of 0.96 mm was obtained.
  • a substrate with a through-electrode was manufactured using an alkali-free glass (# 1737 made by KINGING Co., Ltd.) insulating base material.
  • the insulating base material had a volume resistivity of 3 ⁇ 10 13 Q cm and was a 150 mm diameter disk with a thickness of 0.7 mm.
  • shot blasting was applied to form through holes with a diameter of 200 ⁇ ⁇ at equal intervals of 2 mm pitch.
  • the conductive paste is a bisphenol A-type epoxy resin (Epicoat 828 Yuka Shenore) as a binder resin.
  • Epoxy and an amine type epoxy resin (ELN-125, manufactured by Sumitomo Chemical Co., Ltd.) in a ratio of 1: 1 (mass ratio) are used, and an amine adduct-based curing agent (PN-23 Ajinomoto) is used as a curing agent.
  • PN-23 Ajinomoto Polyoxyethylene sorbitan fatty acid ester (Nonionic surfactant "Solgen" TW Daiichi Kogyo Seiyaku Co., Ltd.) was used as a dispersant.
  • the curing agent and the dispersant were added in an amount of 0.3% by mass and 0.2% by mass, respectively, in comparison with the conductive paste.
  • the filler powder a powder obtained by coating silver on spherical copper particles having an average particle diameter of 4.9 ⁇ m prepared by a reduction method was used, and 91.0% by mass was added to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with three rolls.
  • the viscosity of the mixed conductive paste was 1200 to 1300 Pa's (rotation speed: 0.5 RPS) as measured by an E-type viscometer at room temperature.
  • the conductive paste was filled into the through holes using a screen printer so that the protrusion heights ⁇ and ⁇ ′ of the conductive paste protrusion were both 100 zm.
  • the conductive paste is cured by heating it at 180 ° C for 60 minutes using an electric oven, and then lapping the surface of the insulating base material so that both processing amounts W and become 20 / im.
  • a substrate with a through electrode having a thickness of 0.66 mm was obtained.
  • a substrate with a through electrode was manufactured using polyimide as an insulating base material.
  • the insulating base material had a volume resistivity of l ⁇ 10 16 Q cm, a square of 100 mm square and a thickness of 0.5 mm.
  • Elliptical through holes with a short diameter of 130 ⁇ m and a long diameter of 180 ⁇ m were formed at equal intervals of 2 mm using a punching machine.
  • the conductive paste is composed of a bisphenol F-type epoxy resin (Epicoat 807 Yuka Shell Epoxy) and an epoxy resin obtained by glycidyl esterification of dimer acid (epoxy equivalent: 400-500 g / eq) as binder resin. : 3 (mass ratio), dicyandiamide (DICY7 manufactured by Yuka Shell Epoxy Co., Ltd.) as a curing agent, and an anionic surfactant (manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd.) as a dispersant.
  • the curing agent and the dispersant were added in an amount of 1.0% by mass and 0.3% by mass, respectively, relative to the conductive paste.
  • Filler powder Flake-shaped silver particles having an average particle diameter of 10.5 / m were used, and added in an amount of 90.3% by mass relative to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with three rolls.
  • the viscosity of the kneaded conductive paste was 1300 to 1400 Pa's (rotation speed 0.5 RPS) as measured by an E-type viscometer at room temperature.
  • the through-hole was filled with the conductive paste by using a screen printing machine so that the protruding portions ⁇ and ⁇ ′ of the filled conductive paste became 100 zm.
  • the conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then wrapping both surfaces of the insulating base material so that the processing amounts W and W 'are both 20 am.
  • a substrate with a through electrode having a square and a thickness of 0.46 mm was obtained.
  • a substrate with a through electrode was manufactured using a glass-epoxy resin insulating base material.
  • the insulation substrate has a volume resistivity of 200 beta m to Aramido nonwoven epoxy sheet having a thickness in those piled six in 2 X 10 1Q Q cm, and a thickness of 1. 2 mm in square 120mm square.
  • Circular through-holes with a diameter of 250 ⁇ m were formed at equal intervals of 2 mm pitch using a micro-drilling machine using an NC drill nozzle.
  • As many base materials as possible were used to form through electrodes in 3000 through holes.
  • the conductive paste used was a bisphenol A type epoxy resin (Epicoat 828 Yuka Shell Epoxy Co.) and an epoxy resin obtained by darcidyl esterifying dimer acid (epoxy equivalent: 400 500 g / eq) as binder resin. (Mass ratio), phthalic anhydride as a curing agent, and phosphoric acid ester (anionic surfactant "Blysurf” manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) as a dispersant were used. The hardener and the dispersant were added in an amount of 2.8% by mass and 0.2% by mass, respectively, relative to the conductive paste.
  • the filler powder used was a powder obtained by mixing spherical silver particles having an average particle diameter of 1 and flake silver particles having an average particle diameter of 11.2 ⁇ m in a ratio of 4: 6, and 89.7% by mass relative to the conductive paste.
  • These binder resin and filler powder were stirred and kneaded while defoaming with three rolls.
  • the viscosity of the kneaded conductive paste is 1200-1300 Pa's (rotational speed 0.5 RPS) as measured by an E-type viscometer at room temperature.
  • the viscosity of the kneaded conductive paste is 1200-1300 Pa's (rotational speed 0.5 RPS) as measured by an E-type viscometer at room temperature.
  • the through-hole was filled with the conductive paste using a screen printer so that the protruding portions ⁇ and ⁇ ′ of the protruding portion of the filled conductive paste were both 100 / m.
  • the conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then wrapping both surfaces of the insulating substrate so that the processing amounts W and W 'are both 30 xm.
  • a substrate with a through electrode having a thickness of 1.14 mm was obtained.
  • a non-alkali glass (# 1737 made by Kohjung) insulating base material (a disk with a diameter of 150 mm and a thickness of 0.7 mm)
  • a resist mask having holes with a diameter of 200 ⁇ 10 ⁇ m was used as a glass insulating material.
  • a hole was formed on the base material, and a hole reaching the opposite surface of the glass insulating base material by shot blasting was formed as a through hole. Shot blasting uses # 400- # 800 powder of silicon carbide or alumina, and by adjusting the injection pressure of the powder, the through-hole walls with different surface states were formed.
  • the wall surface of the formed through hole had a height difference hO. 09-0.55 / im and a pitch of p4.0.
  • FIG. 4 is an enlarged sectional view of the through hole 12 formed in the glass insulating substrate 10.
  • 3 shows a resist mask 90 having a through hole 91 on a glass insulating substrate 10 and a surface unevenness of a through hole wall surface 14 formed in the insulating substrate 10.
  • the through-hole wall surface 14 When a part of the through-hole wall surface 14 is shown in an enlarged manner, as shown in FIG. 5, the through-hole wall surface has a height difference (a difference in height between a peak and a valley) h, There is unevenness consisting of pitch p.
  • the average particle size (average diameter) d of the spherical copper powder particles 31 which are the filler powder contained in the conductive paste is also shown in FIG.
  • Spherical copper powder particles (diameter distribution is about 0. 5 beta m-about 13 mu m, an average diameter of about 4.2, 5.
  • Example 4 The same conductive paste used in Example 4, which was kneaded with epoxy resin so that the three types of 1, 7.5 ⁇ ) was about 91% by mass, was used for the glass insulation with different surface irregularities on the wall surfaces of the through holes.
  • the conductive paste was filled into the through holes by imprinting on the base material. Heat it at 200 ° C for 30 minutes After hardening the conductive paste, both sides of the base are polished by about 20 ⁇ , including the hardened conductive paste projections that protrude about 100 ⁇ m from both ends of the glass insulating base material. A substrate with electrodes was manufactured.
  • a GMR element (giant magnetoresistive element) 50 On the other surface of the substrate, lead terminals 54 were formed so as to electrically connect to the through electrodes 30a, respectively, and then cut into the size of the GMR element 50 to obtain a glass wiring substrate.
  • the frequency of occurrence of loosening of the penetrating electrode (including dropout during the process) in Table 2 is also shown in the same table.
  • the height h was 1Z20 or more, and the pitch p was equal to or more than the average diameter d of the filler powder particles 31.
  • a non-alkali glass (# 1737 made by Kojung) insulating base material (a disk with a diameter of 150 mm and a thickness of 0.7 mm)
  • a resist mask with a hole with a diameter of 200 ⁇ 10 ⁇ m was used as a glass insulating material. It was formed on a substrate. Then, a through hole reaching the lower end surface of the glass insulating base material is formed by wet etching with a hydrofluoric acid chemical solution, and then a shot blast is performed at a certain angle with respect to the hole, so that a portion of the through hole wall surface is formed. An uneven portion was formed on the substrate.
  • the height difference h of the formed concavo-convex part is 0.25-0.31 111, and the pitch is 6.1-9.8 ⁇ m. — Changed to 50%.
  • the formed concavo-convex portion has a height difference h of 1Z20 or more of the average diameter d of the filler powder particles, and the pitch p thereof is equal to or more than the average diameter d.
  • the ratio of 0% means that the shot blast is not performed only by wet etching.
  • the same conductive paste as that used in (1) was imprinted on a glass insulating substrate, and the through-hole was filled with the conductive paste. Heat the paste at 200 ° C for 30 minutes to cure the paste, and then extend from both ends of the base, including the cured conductive paste protrusions that protrude about 100 xm from both ends of the glass insulating base.
  • a substrate with a through electrode was manufactured by polishing 20 ⁇ m .
  • the GMR element The glass wiring board was cut into a size of 50.
  • the state of loosening of the penetrating electrode 30a that occurred during the process of forming the GMR element 50 on the substrate 100 was examined. 4 shows a graph showing the relationship between The substrate without shot blasting (roughness ratio 0%) had a slack occurrence rate of 68%, and at the unevenness ratio 18%, the slack occurrence rate was almost zero.
  • the unevenness ratio is 20% or more, the penetrating electrode will not fall out or move through the through-hole unless a direct force is applied to the penetrating electrode.However, considering the margin, the unevenness ratio should be 30% or more. It turns out to be good.
  • a through hole having a shape different from that of Examples 9 and 10 was provided.
  • a substrate with a through electrode was fabricated.
  • a resist mask 90 having a through hole 91 with a diameter of 200 ⁇ 10 / m is placed on the glass insulating base material 10 and approximately 600 ⁇ m is shot blasted.
  • a hole having a depth of m was formed, and by drilling the hole, the remaining portion was chipped to form the through hole 12. 8000 through holes were simultaneously formed on a glass insulating substrate.
  • the opening diameter dl of the through hole 12 on one end surface 16 of the insulating base material 10 is 250 ⁇ 40 Atm, the other side 18 has a small opening diameter, the side opening diameter d2 is 140 ⁇ 40 ⁇ 111, and the minimum part 19 Had a diameter d3 of 80 120 xm. In all the through holes 12, the opening diameter d2 on the smaller side was larger than the diameter d3 of the minimum portion 19.
  • Example 4 About 91% by mass of spherical copper powder particles (having a diameter distribution of about 1 ⁇ m to about 10 ⁇ m and an average diameter of about 7 ⁇ m) were used in Example 4 in which kneaded with an epoxy resin.
  • the same conductive paste as that which was used was imprinted on a glass substrate, and the through-hole was filled with a conductive paste.
  • the minimum diameter d3 of the penetrating electrode is larger than eight times the average diameter of the copper powder particles contained in the penetrating electrode, that is, the average diameter of the filler particles, specifically 80 120 zm.
  • the average diameter of the filler particles specifically 80 120 zm.
  • the cross section of the other part of the through electrode has an area approximately equal to or larger than the area of the minimum diameter. Therefore, more filler powder particles are present.
  • the diameter d3 of the minimum portion of the through hole was 80 120 ⁇ m
  • the diameter d2 of the inlet on the small side was 140 ⁇ 40 ⁇ m. It was less than 90% of the diameter d2. Since the difference between the inlet opening diameter d2 of the side and the diameter d3 of the extremely small part is large, the conductive paste is heated to about 200 ° C and cured. It was possible to prevent the through electrode from falling off or loosening.
  • FIG. 10 shows an enlarged cross-sectional view of a base material having a through hole having a different shape.
  • the through hole 12 is formed with two holes 12 ′ and 12 ′′ formed from each end face of the glass insulating base material 10, and the holes 12 ′ and 12 ⁇ communicate inside the through hole 12.
  • the center axes of the inlet openings on each end face are eccentric to each other, and in the example shown in this figure, the inlet opening diameter d4 of the large hole 12 'is about 300 xm and the small hole is
  • the 12 mm inlet opening diameter d5 is about 150 zm, and their eccentricity is 100 ⁇ m, so the eccentricity is larger than the difference between their radii.
  • holes need to be formed from both end surfaces of the base material.
  • a through hole formed in an insulating base material is filled with a thermosetting conductive paste, and the surface of the substrate is processed after the thermosetting by an easy method that does not require a special device.
  • a method for manufacturing a substrate with a through electrode, which can stably obtain a pole, can be provided.

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Abstract

A feedthrough electrode-carrying substrate used for a substrate for a giant magneto-resistance effect element or the like. Thermosetting conductive paste is filled into through-holes formed in an insulating substrate of glass, ceramics, etc. by screen printing or the like, and the filled conductive paste is heated and cured to produce a feedthrough electrode-carrying substrate. Conductive paste is filled in so as to protrude from the opposite ends of through-holes, and the protruded portions of conductive paste are removed by working after heat-cured. Since zones having a low conductive powder density are formed in the vicinities of the protruded portions of cured conductive paste and the ends of through-holes, opposite end surfaces of the insulating substrate including protruded conductive paste portions are worked to remove the zones and hence obtain a good-conduction feedthrough electrode. In addition, properly-shaped through-holes can prevent a feedthrough electrode from loosening.

Description

明 細 書  Specification
貫通電極付き基板の製造方法  Method for manufacturing substrate with through electrodes
技術分野  Technical field
[0001] 本発明は、電気的導通に優れた電極を安定的に得ることが可能な、貫通電極付き 基板の製造方法に関するものである。  The present invention relates to a method for manufacturing a substrate with a through electrode, which can stably obtain an electrode having excellent electrical conduction.
背景技術  Background art
[0002] 絶縁基板上にウェハープロセスを用いて作製されたセンサーチップからリード線を 取り出す場合には、センサーチップの電極端子にメタルワイヤーを超音波ボンディン グで取り付けたり、パターン形成されたフレキシブルケーブルをはんだ接着するなど が一般的に行われている。配線基板に貫通電極を形成することができれば、センサ 一チップ裏側の電極端子を貫通電極と接続して絶縁性基板上にセンサーチップを 形成することができるので、センサーチップ表側(回路面)に電極パッドを形成するこ とが要らなくなり、センサーチップサイズを小型にすることが可能となる。また、センサ 一チップ表側へのワイヤー/フレキシブルケーブル配線が無くなり、センシングの対 象に対してセンサーチップ表面を近接できるので、センサーの感度を向上することが 可能となる。さらには、センシングの対象がフラットな面であれば、センサーを摺動さ せることも可能となる。ウェハープロセスを使用することで、フォトリソグラフィー技術に よるセンサーパターンの微細化や小型化、センサーチップを一括作製することによる コストダウンも可能である。貫通電極付き基板は、上に述べたような利点があるのでセ ンサーチップを製造する上で非常に有用な基板である。  [0002] When a lead wire is taken out from a sensor chip manufactured by a wafer process on an insulating substrate, a metal wire is attached to an electrode terminal of the sensor chip by ultrasonic bonding, or a flexible cable having a pattern formed is used. Soldering is commonly used. If a through-electrode can be formed on the wiring board, the sensor terminals can be formed on the insulating substrate by connecting the electrode terminals on the back side of one sensor chip to the through-electrode. It is not necessary to form a pad, and the sensor chip size can be reduced. In addition, there is no wire / flexible cable wiring on the front side of one sensor chip, and the sensor chip surface can be brought closer to the target of sensing, so that the sensitivity of the sensor can be improved. Furthermore, if the sensing target is a flat surface, the sensor can be slid. By using the wafer process, it is possible to reduce the size and size of the sensor pattern by photolithography technology, and to reduce costs by manufacturing sensor chips all together. A substrate with a through electrode is a very useful substrate for manufacturing a sensor chip because of the advantages described above.
[0003] 絶縁性基材に貫通電極を取り付けた基板を作成するには、絶縁性基材に貫通孔を 形成し、その貫通孔に導電ペーストを充填し硬化して貫通電極付き基板を形成する 。絶縁性基材としてセラミックス、ガラス、樹脂などの絶縁体が用いられる。また、導電 ペーストは絶縁性基材の耐熱温度以下の温度で硬化するものが用いられる。導電べ 一ストの充填にはスクリーン印刷技術を用いることで、絶縁性基材に形成した数多く の貫通孔に同時にペーストを充填することができる。精度良く微細な貫通孔を形成す ることによって、微細な電極を高精度に配置した貫通電極付き基板を作製することが できる。貫通孔に電極を形成するには、塑性変形しゃすい金属を貫通孔に嵌め込む こともできる力 S、金属を嵌め込む時の力で絶縁性基材が割れるおそれがあるので、望 ましくなレ、。また貫通孔にめっきにより金属を充填することもできる力 S、基材が絶縁性 なので予めめつきのためのシード層を形成する必要があり、プロセスが煩雑になりや すレ、ので望ましくはなレ、。貫通孔を形成した絶縁性基材に導電ペーストを充填して 電極を形成することが一般に採用されている。 [0003] In order to create a substrate having a through electrode attached to an insulating substrate, a through hole is formed in the insulating substrate, and the through hole is filled with a conductive paste and cured to form a substrate with a through electrode. . An insulator such as ceramics, glass, or resin is used as the insulating base material. Also, a conductive paste that is cured at a temperature equal to or lower than the heat resistant temperature of the insulating base material is used. By using screen printing technology to fill the conductive paste, the paste can be simultaneously filled into many through holes formed in the insulating base material. By forming fine through-holes with high precision, it is possible to manufacture substrates with through electrodes in which fine electrodes are arranged with high precision. it can. In order to form an electrode in the through-hole, it is not desirable because the insulating base material may be cracked by the force S that can insert the plastically deformed metal into the through-hole and the force when the metal is inserted. Les ,. In addition, the force S that can fill the through hole with metal by plating, the seed layer for plating must be formed in advance because the base material is insulating, and the process becomes complicated, which is not desirable. ,. It is generally employed to form an electrode by filling a conductive paste into an insulating base material having through holes formed therein.
[0004] 導電ペーストは、フィラーと呼ばれる導電性の粉末粒子と、液状のバインダーから構 成される。導電ペーストの硬化温度を調節するために適当な成分をしたバインダーを 選択する。積層セラミックス電子部品の電極形成等に使用されている導電ペーストは 、バインダーとしてガラスを使用しているので硬化に 900°C前後の温度での焼成が必 要である。しかし、エポキシ等の熱硬化性樹脂をバインダーとした熱硬化性導電ぺー ストでは、 200°C前後の温度で硬化が可能である。熱硬化性導電ペーストを使用す れば電気オーブンのような簡易装置でも導電ペーストの硬化が可能であり、耐熱温 度の低い材料で作った絶縁性基材を使用することができる。  [0004] The conductive paste is composed of conductive powder particles called a filler and a liquid binder. Select a binder with appropriate components to control the curing temperature of the conductive paste. The conductive paste used to form electrodes for multilayer ceramic electronic components uses glass as a binder, and therefore requires firing at a temperature of around 900 ° C for curing. However, a thermosetting conductive paste using a thermosetting resin such as epoxy as a binder can be cured at a temperature of about 200 ° C. If a thermosetting conductive paste is used, the conductive paste can be cured even with a simple device such as an electric oven, and an insulating base material made of a material having a low heat-resistant temperature can be used.
[0005] 絶縁性基材に開けた貫通孔に導電ペーストを充填するのに通常ドクターブレードな どの搔き取り板が用いられる。基材表面に付けた導電ペーストをドクターブレードで 搔き取りながら貫通孔内に充填するので、貫通孔先端近くの導電ペーストの一部が 取り除かれて、貫通孔内に充填した導電ペースト先端に窪みの生じることがあった。 日本特許公開公報特開 2001-160684号には、絶縁性基材の上でローラーを転が して導電ペーストを貫通孔内に圧力を加えながら充填する技術を開示している。 日 本特許に開示された技術によれば、導電ペーストに圧力をカ卩えながら貫通孔内へ充 填することができるので、貫通孔に充填された導電ペースト上に窪みが生じるのを防 ぐことができる。  [0005] A peeling plate such as a doctor blade is usually used for filling a conductive paste into a through hole formed in an insulating base material. The conductive paste applied to the surface of the base material is filled into the through-hole while being scraped off with a doctor blade, so part of the conductive paste near the tip of the through-hole is removed, and the conductive paste filled in the through-hole is recessed at the tip. May occur. Japanese Patent Application Laid-Open Publication No. 2001-160684 discloses a technique in which a roller is rolled on an insulating base material to fill the through-hole with pressure while applying a conductive paste. According to the technology disclosed in the Japanese Patent, since the conductive paste can be filled into the through-hole while reducing the pressure, the occurrence of a depression on the conductive paste filled in the through-hole can be prevented. be able to.
[0006] しかし、絶縁性基板に設けた貫通電極は導電性が良ぐ導通不良のないことが要 求されている。貫通電極は導電フィラー粉末とバインダー樹脂とを混合した導電ぺー ストを加熱硬化させて作るので、その加熱硬化時に貫通電極が導通不良となることが あった。上記日本特許公報に開示されている技術を用いても、貫通電極の導通不良 をなくすには、導電ペーストを貫通孔内へ充填する際に極めて大きな圧力をローラー に加えて過剰のバインダー樹脂を圧搾して貫通孔の外へ排出する必要があった。 発明の開示 [0006] However, it is required that the through electrodes provided on the insulating substrate have good conductivity and no conduction failure. Since the penetrating electrode is made by heating and curing a conductive paste obtained by mixing a conductive filler powder and a binder resin, the conduction of the penetrating electrode sometimes becomes poor during the heating and curing. Even if the technology disclosed in the above-mentioned Japanese Patent Publication is used, in order to eliminate the conduction failure of the through electrode, an extremely large pressure is applied to the conductive paste when filling the through-hole with the conductive paste. In addition to this, it was necessary to squeeze excess binder resin and discharge it out of the through-hole. Disclosure of the invention
[0007] 以上のような問題に鑑み、本発明では過剰のバインダー樹脂を絶縁性基材表面に 強制的に排出させるための特別な装置を必要とせず、通常に用いられているスクリー ン印刷などで導電ペーストを貫通孔内に充填する技術を用いても、電気導通性の良 い貫通電極を持った基板を安定して製造することができる貫通電極付き基板の製造 方法を提供することを目的とする。  [0007] In view of the above problems, the present invention does not require a special device for forcibly discharging excess binder resin to the surface of the insulating base material. To provide a method of manufacturing a substrate with a through-electrode that can stably manufacture a substrate having a through-electrode with good electrical conductivity even when using a technique of filling a conductive paste into a through-hole by using And
[0008] 本発明による貫通電極付き基板の製造方法は、絶縁性基材に貫通孔を開け、その 貫通孔内に熱硬化性導電ペーストを充填して貫通孔の両端開口から高さ 50 / m— 200 μ m、好ましくは高さ 70 β m— 100 μ m、の突出部を熱硬化性導電ペーストで 形成し、熱硬化性導電ペーストを加熱硬化し、熱硬化性導電ペーストの突出部を含 めて絶縁性基材の両表面力ら加工を行って絶縁性基材の表面から片側で 3 /i m— 5 0 μ m取り除く各工程力 なる。貫通孔は 30 β m— 800 μ m径をしているのが好まし レ、。 [0008] In the method for manufacturing a substrate with a through electrode according to the present invention, a through hole is formed in an insulating base material, a thermosetting conductive paste is filled in the through hole, and a height of 50 / m from both ends of the through hole. — 200 μm, preferably 70 βm—100 μm height, formed with thermosetting conductive paste, heat-cured thermosetting conductive paste, including protrusion of thermosetting conductive paste First, the process power is removed from both surfaces of the insulating base material to remove 3 / im—50 μm on one side from the surface of the insulating base material. The through hole preferably has a diameter of 30 β m—800 μm.
[0009] 貫通電極付き基板を製造するのに用いる絶縁性基材としてセラミックス、ガラス、榭 脂もしくはこれらの複合材を用いることができる。絶縁性基材は 300 μ m 2mm厚で あることが好ましレ、。板厚が 300 x m未満の基材は、プロセス中のハンドリング時や加 ェ後のチップ実装時に割れや欠けが発生しやすぐ強度のある貫通電極付き基板を 得ることが困難である。 2mmよりも厚い貫通電極付き基板では貫通孔に導電ペース トを均一に充填することが困難である。  [0009] Ceramics, glass, resin, or a composite material thereof can be used as an insulating substrate used for manufacturing a substrate with a through electrode. Preferably, the insulating substrate is 300 μm 2 mm thick. For substrates with a thickness of less than 300 x m, cracking or chipping occurs during handling during processing or chip mounting after processing, and it is difficult to obtain a substrate with a through-electrode that is immediately strong. For a substrate with a through electrode thicker than 2 mm, it is difficult to uniformly fill the conductive paste in the through hole.
[0010] 本発明の製造方法に使用する熱硬化性導電ペーストは、 85 93質量%のフイラ 一粉末と残部実質的に熱硬化性バインダー樹脂からなることが好ましい。熱硬化性 バインダー樹脂はエポキシ基を 2個以上持った液状エポキシ樹脂を主成分として含 むのがよい。フィラー粉末は平均粒径 1. O x m以上で 20 z m以下の導電性粉末粒 子からなることが好ましい。フィラー粉末が球状粒子では平均粒径 1. 0 /i m— 8. 0 /i mであることが好ましぐフィラー粉末がフレーク状粒子では平均粒径 3. 0 /i m— 20 /i mであることが好ましい。また、熱硬化性導電ペーストは更に、 0. 2質量%— 3. 0 質量%の硬化剤と 1. 0質量%以下の分散剤を含んでいるのが好ましい。 [0011] 貫通孔は、貫通孔内壁面の 30%以上においてその面粗さの凹凸が充填すべき熱 硬化性導電ペーストが含んでいるフィラー粉末粒子の平均粒径の 1/20以上の高 低差を持つとともに、面粗さの凹凸のピッチが平均粒径以上であることが好ましい。 [0010] The thermosetting conductive paste used in the production method of the present invention is preferably composed of 8593% by mass of the filler powder and the balance substantially of the thermosetting binder resin. The thermosetting binder resin preferably contains a liquid epoxy resin having two or more epoxy groups as a main component. The filler powder is preferably made of conductive powder particles having an average particle size of 1.O xm or more and 20 zm or less. The average particle diameter of the filler particles is preferably 1.0 / im—8.0 / im for spherical particles. The average particle diameter of the filler powder is 3.0 / im—20 / im for flake particles. preferable. In addition, the thermosetting conductive paste preferably further contains 0.2% by mass to 3.0% by mass of a curing agent and 1.0% by mass or less of a dispersant. [0011] The through-hole has a height of 1/20 or more of the average particle diameter of the filler powder particles contained in the thermosetting conductive paste to be filled with unevenness of the surface roughness in 30% or more of the inner wall surface of the through-hole. It is preferable that the pitch of the unevenness of the surface roughness is not less than the average particle diameter while having a difference.
[0012] あるいは、貫通孔はその両端それぞれの開口の直径よりも小さな直径の極小値を 両端の途中に持ち、その極小値はフイラ一粉末粒子の平均粒径の 8倍よりも大きいこ とが好ましい。その極小値が、両端開口の小さい側の開口直径の 90%未満であるこ とは更に好ましい。そして、その極小値が 80 z mよりも大きいことがよい。  [0012] Alternatively, the through-hole may have a local minimum value of the diameter smaller than the diameter of each opening at both ends, and the local minimum value may be larger than eight times the average particle size of the filler particles. preferable. It is further preferred that the minimum value is less than 90% of the diameter of the opening on the smaller side of the opening at both ends. Then, the minimum value is preferably larger than 80 zm.
[0013] あるいは、その貫通孔が両端それぞれの開口中心軸が互いに偏芯していても良く 、その偏芯量が両開口の半径の差よりも大きレ、ことが好ましレ、。  [0013] Alternatively, the through-hole may be such that the center axes of the openings at both ends thereof are eccentric to each other, and the amount of eccentricity is preferably larger than the difference between the radii of the two openings.
図面の簡単な説明  BRIEF DESCRIPTION OF THE FIGURES
[0014] [図 1]貫通電極付き基板の製造方法を説明するための概略図であって、図 1 (A)は 本発明の製造方法に用いる絶縁性基材を示す斜視図、図 1 (B)は貫通孔を開けた 絶縁性基材の斜視図、図 1 (C)は図 1 (B)に示す絶縁性基材の 1C一 1C線に沿った 断面図、図 1 (D)は図 1 (C)に示している絶縁性基材の貫通孔に導電ペーストを充 填した絶縁性基材の断面図で、基材の両端面からの導電ペーストの突出高さ H、 H ' を示していて、図 1 (E)は導電ペーストを充填した絶縁性基材の両端面からの加工 量 W、W を示している断面図である。  FIG. 1 is a schematic view for explaining a method for manufacturing a substrate with through electrodes, and FIG. 1 (A) is a perspective view showing an insulating base material used in the manufacturing method of the present invention, and FIG. (B) is a perspective view of the insulating base material with a through hole, FIG. 1 (C) is a cross-sectional view of the insulating base material shown in FIG. 1 (B) along the line 1C-1C, and FIG. 1 (D) is Fig. 1 (C) is a cross-sectional view of the insulating base material in which the conductive paste is filled into the through holes of the insulating base material.The heights H and H 'of the conductive paste projecting from both end surfaces of the base material are shown. FIG. 1E is a cross-sectional view showing the processing amounts W, W from both end surfaces of the insulating base material filled with the conductive paste.
[図 2]絶縁性基材に開けた貫通孔内に充填固化した導電ペーストの断面を説明する ための模式断面図である。  FIG. 2 is a schematic cross-sectional view for explaining a cross section of a conductive paste filled and solidified in a through hole formed in an insulating base material.
[図 3]絶縁性基材に開けた貫通孔内に充填した導電ペーストを加熱した際の固化す る様子を説明するための模式断面図である。  FIG. 3 is a schematic cross-sectional view for explaining a state in which a conductive paste filled in a through hole formed in an insulating base material is solidified when heated.
[図 4]本発明に用いることができる絶縁性基材に開けた貫通孔の拡大断面図である。  FIG. 4 is an enlarged cross-sectional view of a through hole formed in an insulating base material that can be used in the present invention.
[図 5]貫通孔壁面の説明拡大断面図である。  FIG. 5 is an explanatory enlarged sectional view of a wall surface of a through hole.
[図 6]貫通電極付き基板上に形成した GMR素子を持った配線基板の平面図である。  FIG. 6 is a plan view of a wiring substrate having a GMR element formed on a substrate with through electrodes.
[図 7]図 6の配線基板の背面図である。  FIG. 7 is a rear view of the wiring board of FIG. 6.
[図 8]貫通電極の弛み発生率(%)と貫通孔凹凸部比率(%)との関係を示すグラフで める。  FIG. 8 is a graph showing the relationship between the slack occurrence rate (%) of the through electrode and the ratio (%) of the through hole uneven portion.
[図 9]本発明に用いることができる絶縁性基材に開けた他の貫通孔の拡大断面図で ある。 FIG. 9 is an enlarged cross-sectional view of another through hole formed in an insulating base material that can be used in the present invention. is there.
[図 10]本発明に用いることができる絶縁性基材に開けた更に他の貫通孔の拡大断面 図である。  FIG. 10 is an enlarged cross-sectional view of still another through-hole formed in an insulating substrate that can be used in the present invention.
符号の説明  Explanation of reference numerals
[0015] 10 絶縁性基材  [0015] 10 Insulating base material
12 貫通孔  12 Through hole
30 熱硬化性導電ペースト  30 Thermosetting conductive paste
32 突出部  32 Projection
100 貫通電極付き基板  100 PCB with through electrodes
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0016] 図面を参照しながら本発明による貫通電極付き基板の製造方法を詳しく説明する。  [0016] A method for manufacturing a substrate with through electrodes according to the present invention will be described in detail with reference to the drawings.
[0017] 本発明の貫通電極付き基板の製造方法に、図 1 (A)に斜視図で示している絶縁性 基材 10が用いられる。基材 10としては、セラミックス、ガラス、樹脂もしくはこれらの複 合材を用いることができる。基材 10は 300 z m— 2mm厚であることが好ましい。  In the method for manufacturing a substrate with a through electrode according to the present invention, an insulating substrate 10 shown in a perspective view in FIG. 1A is used. As the base material 10, ceramics, glass, resin, or a composite material thereof can be used. The substrate 10 preferably has a thickness of 300 zm-2 mm.
[0018] 基材 10が 100 μ m 200 μ m厚と薄い場合にはそれに開けた貫通孔に導電ぺー ストを充填して形成した貫通電極に導通不良が生じることはなレ、が、 300 z mよりも薄 い基材はあまりにも機械的強度が弱く取り扱いの途中で割れることがあるので、 300 z m以上の厚さの基材 10を用いることが望ましい。基材 10の厚さが 2mmを超えると 、後の実施例で説明するように、本発明を適用しても貫通電極に導通不良を生じるこ とがあるので、基材 10の厚さが 2mm以下であることが望ましい。  When the base material 10 is as thin as 100 μm or 200 μm, the through electrode formed by filling the through-hole formed in the base material 10 with the conductive paste does not cause a conduction failure, but 300 zm Since a thinner substrate has too low mechanical strength and may break during handling, it is desirable to use a substrate 10 having a thickness of 300 zm or more. If the thickness of the base material 10 is more than 2 mm, as will be described in the later examples, even if the present invention is applied, conduction failure may occur in the through-electrode. It is desirable that:
[0019] 絶縁性基材としては、電子部品用途として実績があり、成型が容易でかつ必要な強 度が得られるセラミックス、ガラス、樹脂もしくはこれらの複合材であることが望ましい。 電極間の電気的絶縁を保ち、且つエレクト口マイグレーションによる電極間短絡の発 生予防の観点から、絶縁性基材の絶縁性を示す体積抵抗率は 101Q Ω cm以上であ ることが望ましい。導電ペーストの硬化温度が 200°C前後なので、絶縁性基材は、軟 化温度が 250°C以上であることが望ましぐ 300°C以上であることは更に望ましい。具 体例としては、セラミックスでは、ァノレミナ、ジルコニァ、シリカ、 BaTiO 、 CaTiO 、 Ni [0019] The insulating base material is preferably ceramics, glass, resin, or a composite material of these materials, which has a proven track record for use in electronic components and is easy to mold and has the required strength. From the viewpoint of maintaining the electrical insulation between the electrodes and preventing the occurrence of a short circuit between the electrodes due to the migration of the electorifice, it is desirable that the volume resistivity indicating the insulating property of the insulating base material is 101 QΩcm or more. Since the curing temperature of the conductive paste is around 200 ° C, it is more desirable for the insulating base material to have a softening temperature of 250 ° C or higher, preferably 300 ° C or higher. Specific examples of ceramics include anoremina, zirconia, silica, BaTiO, CaTiO, Ni
3 3 3 3
Znフヱライトなどが使用できる。ガラスでは、ソーダガラス、ホウケィ酸ガラス、鉛ガラス 、石英ガラス、結晶化ガラスなどが使用できる。樹脂では、ポリイミド、ポリカーボネート 、ポリエーテルスルホン(PES)、ポリスルホンなどが使用でき、複合材としては、セラミ ックス ガラス複合材、ガラス エポキシなどが使用できる。 Zn fluoride or the like can be used. For glass, soda glass, borosilicate glass, lead glass , Quartz glass, crystallized glass and the like can be used. As the resin, polyimide, polycarbonate, polyethersulfone (PES), polysulfone, or the like can be used, and as the composite material, ceramic glass composite material, glass epoxy, or the like can be used.
[0020] 図 1 (B)と図 1 (C)に示すように絶縁性基材 10に貫通孔 12が開けられる。絶縁性基 材 10の貫通孔 12は、工業的に容易にかつ精度良く形成できることが望ましぐレー ザ一やショットブラスト、パンチ、ドリル、エッチング、铸込みなどで開けることができる 。特にショットブラストとエッチングは、絶縁性基材に多数の貫通孔を同時に形成でき るので、望ましい。貫通孔の径は 30 z m以上 800 z m以下であることが望ましい。径 力 ¾0 x m未満の貫通孔は容易に且つ安定的に形成することが難しぐ導電ペースト を均一に充填することが困難である。 800 z mよりも大きな径の貫通孔は、導電ぺー ストを充填してから硬化するまでの間に導電ペーストが漏れ出て来る等の問題があり 望ましくない。貫通孔は円形に限らず、方形、楕円、不定の形状とすることもできる。 これらの径は、方形では対角線、楕円では長径、不定の形状では最短の対角線と最 長の対角線の平均長さで規定される。  As shown in FIG. 1 (B) and FIG. 1 (C), a through hole 12 is formed in the insulating base material 10. The through hole 12 of the insulating substrate 10 can be formed by a laser, shot blast, punch, drill, etching, embedding, or the like, which is desired to be easily and accurately formed industrially. In particular, shot blasting and etching are desirable because a large number of through holes can be simultaneously formed in the insulating base material. The diameter of the through-hole is desirably 30 zm or more and 800 zm or less. It is difficult to uniformly fill the conductive paste, which is difficult to form easily and stably, with a through hole having a diameter of less than 0 x m. A through-hole having a diameter larger than 800 zm is not desirable because it has problems such as leakage of the conductive paste between the time of filling the conductive paste and the time of curing. The through hole is not limited to a circle, but may be a square, an ellipse, or an indefinite shape. These diameters are defined by the diagonal line for a rectangle, the major axis for an ellipse, and the average length of the shortest and longest diagonal lines for irregular shapes.
[0021] 図 1 (B)と図 1 (C)に示す貫通孔 12内に図 1 (D)に断面図で示すように熱硬化性導 電ペースト 30を充填して、貫通孔 12の両端開口から突出部を熱硬化性導電ペース ト 30で形成する。そして、貫通孔 12に充填した熱硬化性導電ペースト 30を加熱硬化 する。  [0021] The thermosetting conductive paste 30 is filled in the through holes 12 shown in FIGS. 1 (B) and 1 (C) as shown in the cross-sectional view of FIG. A protruding portion is formed from a thermosetting conductive paste 30 from the opening. Then, the thermosetting conductive paste 30 filled in the through holes 12 is cured by heating.
[0022] 絶縁性基材 10に形成した貫通孔 12に熱硬化性導電ペースト 30を充填するには、 孔毎に導電ペーストを注入する方法や、絶縁性基材上に塗った導電ペーストに圧力 をかけて絶縁性基材の全ての貫通孔 12から導電ペーストを押出す方法や、スクリー ン印刷法を採ることができる。スクリーン印刷を使用すれば、絶縁性基材 10に精密な パターンで配置形成した数多くの貫通孔全てに、同時に導電ペースト 30を充填する こと力 Sできる。また絶縁性基材表面に不必要な導電ペーストが付着することも防止で き、後工程で付着物を除去する工程が不要になるだけでなく導電ペーストの節約に もなり経済的である。さらには、スクリーン印刷法を使用すれば、本発明で重要となる 導電ペーストの突出部の突出高さをコントロールすることが容易となる。スクリーン印 刷法では、導電ペーストの突出高さを導電ペーストの充填量と絶縁性基材裏面にセ ットされるストッパーシートとのスペーシングにより、精密にコントロールすることができ る。 [0022] In order to fill the through-holes 12 formed in the insulating base material 10 with the thermosetting conductive paste 30, a method of injecting the conductive paste into each hole, or a method of applying pressure to the conductive paste applied on the insulating base material, is used. And a method of extruding the conductive paste from all the through holes 12 of the insulating base material, or a screen printing method. If screen printing is used, it is possible to simultaneously fill the conductive paste 30 into all of the many through holes arranged and formed in the insulating base material 10 in a precise pattern. In addition, unnecessary conductive paste can be prevented from adhering to the surface of the insulating base material. This eliminates the need for a step of removing the adhered substance in a later step and saves the conductive paste, which is economical. Furthermore, if the screen printing method is used, it becomes easy to control the height of the protrusion of the conductive paste, which is important in the present invention. In the screen printing method, the protrusion height of the conductive paste is set on the filling amount of the conductive paste and the back surface of the insulating base material. Precise control can be achieved by spacing with the stopper sheet to be set.
[0023] 熱硬化性導電ペースト 30を絶縁性基材 10に設けられた貫通孔 12に充填した際の 突出部 32の突出高さ Hは、 50 x m以上 200 x m以下とすることが望ましい。導電ぺ 一ストの突出高さ Ηが 50 μ m未満では、フィラー粉末濃度の薄い領域が加工で除去 しきれず、貫通電極付き基板 100内に導通不良の電極が発生する可能性がある。ま た、導電ペースト 30の突出部 32の突出高さ Hが 200 μ mよりも大きくなると、加工で 除去される導電ペースト量が多くなるので経済的でなぐ加工時間も長くかかる。より 確実にフィラー粉末濃度の薄い領域を除去し、より経済的に導電ペーストを使用する ためには、導電ペースト突出部 32の突出高さ Hを 70 a m以上 100 μ m以下とするこ とがより望ましい。  It is desirable that the protrusion height H of the protrusion 32 when the thermosetting conductive paste 30 is filled in the through-hole 12 provided in the insulating base material 10 be not less than 50 × m and not more than 200 × m. If the protruding height of the conductive paste is less than 50 μm, a region having a low filler powder concentration cannot be completely removed by processing, and an electrode with poor conduction may be generated in the substrate 100 with through electrodes. Further, if the protruding height H of the protruding portion 32 of the conductive paste 30 is larger than 200 μm, the amount of the conductive paste to be removed by the processing increases, and the processing time which is economical is long. In order to more reliably remove the region where the filler powder concentration is low and use the conductive paste more economically, the protrusion height H of the conductive paste protrusion 32 should be 70 am or more and 100 μm or less. desirable.
[0024] 本発明に用いる熱硬化性導電ペースト 30は 85質量%— 93質量%のフイラ一粉末 と残部実質的に熱硬化性導電バインダー樹脂とを含んでいることが好ましい。そして 導電ペーストは更に硬化剤と分散剤とを含むことができる。バインダー樹脂はェポキ シ基を 2個以上有する液状エポキシ樹脂を主成分として含み、フィラー粉末は平均 粒径 1. 0 μ m以上 20 μ m以下の導電性の粉末粒子を主成分として含むことが望ま しい。  [0024] The thermosetting conductive paste 30 used in the present invention preferably contains 85% to 93% by mass of the filler powder and the balance substantially of the thermosetting conductive binder resin. The conductive paste may further include a curing agent and a dispersant. The binder resin contains as a main component a liquid epoxy resin having two or more epoxy groups, and the filler powder preferably contains conductive powder particles having an average particle size of 1.0 μm or more and 20 μm or less as the main component. New
[0025] エポキシ基を 2個以上有する液状エポキシ樹脂を主成分とするバインダー樹脂とし て液状エポキシ樹脂を使用すれば、適当な硬化剤を選択することで 200°C前後の低 温でも導電ペーストを硬化することが可能となる。硬化温度が低温であれば、電気ォ ーブンのような簡易な装置を使用することも可能である。さらには耐熱温度の低い材 料でも絶縁性基材として使用することもできる。エポキシ基を 2個以上有する液状ェ ポキシ樹脂には、ビスフエノール A型エポキシ樹脂、ビスフエノール F型エポキシ樹脂 、脂環式エポキシ樹脂、アミン型エポキシ樹脂、ナフタレン骨格のエポキシ樹脂、ダイ マー酸をグリシジノレエステル化したエポキシ樹脂などを、単独もしくは混合して使用 することが可能である。特にグリシジノレエステル系のエポキシ樹脂は粘度が低く硬化 後に可撓性を有している。これらの樹脂を混合使用することにより導電ペーストの熱 サイクルに対する信頼性を高くすることが可能である。熱サイクルに対して信頼性が 低い導電ペーストでは、熱による膨張、収縮によって、フィラー粉末粒子同士の接触 状態が変わり電気抵抗が変化することがある。 [0025] If a liquid epoxy resin is used as a binder resin containing a liquid epoxy resin having two or more epoxy groups as a main component, a conductive paste can be formed even at a low temperature of around 200 ° C by selecting an appropriate curing agent. It can be cured. If the curing temperature is low, a simple device such as an electric oven can be used. Further, even a material having a low heat resistance temperature can be used as an insulating substrate. Liquid epoxy resins having two or more epoxy groups include bisphenol A type epoxy resin, bisphenol F type epoxy resin, alicyclic epoxy resin, amine type epoxy resin, naphthalene skeleton epoxy resin, and dimer acid. It is possible to use dinole esterified epoxy resins, etc., alone or as a mixture. In particular, glycidinole ester epoxy resins have low viscosity and have flexibility after curing. By mixing and using these resins, it is possible to increase the reliability of the conductive paste against thermal cycling. Reliable for thermal cycling In the case of a low conductive paste, the contact state between the filler powder particles changes due to expansion and contraction due to heat, and the electric resistance may change.
[0026] バインダー樹脂に添加する硬化剤は、エポキシ樹脂との混合状態において、室温 では長時間特性が変わることなく保存可能で、所定の温度以上に加熱したときに速 やかに硬化する特性を有することが望ましい。硬化剤としては、ジシアンジアミドゃカ ルボン酸ヒドラジドなどのアミン系硬化斉 1J、 2—ェチルー 4—メチルイミダゾールなどのィ ミダゾール系硬化剤、無水フタル酸、無水ピロメリット酸、無水へキサヒドロフタル酸、 無水メチルナジック酸などの酸無水物系硬化剤、ジァミノジフヱニルメタン、ジアミノジ フエニルスルホン酸などの芳香族ァミン系(アミンァダクト)硬化斉 lj、 3_ (3, 4—ジクロ口 フエニル)一 1、 1ージメチル尿素などの尿素系硬化剤、カチオン触媒系硬化剤、フエノ ール系硬化剤などが使用することが可能である。硬化剤の添加量は導電ペースト対 比で 0. 2質量%— 3. 0質量%が望ましい。 3. 0質量%を超えて硬化剤を添加すると 導電ペーストの粘度が高くなり、貫通孔への充填が困難になる。添加量が 0. 2質量 %未満では樹脂が硬化しないことがある。  [0026] The curing agent added to the binder resin, when mixed with the epoxy resin, can be stored at room temperature for a long time without changing its properties, and has a property of rapidly curing when heated to a predetermined temperature or more. It is desirable to have. Examples of the curing agent include amine-based curing agents such as dicyandiamide-carboxylic acid hydrazide, and imidazole-based curing agents such as 2-ethyl-4-methylimidazole, phthalic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, and the like. Acid anhydride-based curing agents such as methylnadic anhydride, and aromatic amine-based (amine adduct) curing agents such as diaminodiphenylmethane and diaminodiphenylsulfonic acid lj, 3_ (3,4-dichlorophenol) Urea-based curing agents such as 1,1-dimethylurea, cationic catalyst-based curing agents, phenol-based curing agents and the like can be used. The amount of the curing agent added is preferably 0.2% by mass to 3.0% by mass relative to the conductive paste. If the curing agent is added in excess of 3.0% by mass, the viscosity of the conductive paste increases, making it difficult to fill the through-hole. If the amount is less than 0.2% by mass, the resin may not be cured.
[0027] 分散剤は導電ペーストの粘度を下げ、貫通孔への充填を助ける効果があるので添 加することが好ましい。分散剤としては、高級脂肪酸のエチレンォキシド、プロピレン ォキシド付加エステル化物、ゾルビタンと脂肪酸のエステル化合物、ゾルビタン等の 多価アルコールのエチレンォキシド、プロピレンォキシド付加エーテル化合物、アル キルベンゼンのエチレンォキシド、プロピレンォキシド付加物等の非イオン性分散剤 、アルキルベンゼンスルホン酸アルカリ塩、高級アルコール硫酸エステルアルカリ塩、 リン酸エステルィヒ合物、高級脂肪酸、高級脂肪酸のエチレンォキシド、プロピレンォ キシド付カ卩物のサルフアートアルカリ塩等のァニオン系分散剤、 4級アンモニゥム塩タ イブのカチオン系分散剤、などを使用することができる。分散剤の添加量は導電ぺー スト対比で 1. 0質量%以下が望ましい。 1. 0質量%を超えて分散剤を添加すると、 導電ペーストの粘度が下力 Sり過ぎるので望ましくない。  [0027] The dispersant is preferably added because it has the effect of lowering the viscosity of the conductive paste and assisting the filling of the through-hole. Examples of the dispersing agent include higher fatty acid ethylene oxide, propylene oxide addition esterified product, ester compound of sorbitan and fatty acid, polyhydric alcohol ethylene oxide such as sorbitan, propylene oxide addition ether compound, alkyl benzene ethylene oxide, and the like. Nonionic dispersants such as propylene oxide adducts, alkali salts of alkyl benzene sulfonic acid, alkali salts of higher alcohol sulfates, phosphoric acid ester compounds, higher fatty acids, ethylene oxides of higher fatty acids, and petroleum products with propylene oxide Anionic dispersants such as sulfate alkali salts, and cationic dispersants such as quaternary ammonium salt types can be used. The amount of the dispersant added is desirably 1.0% by mass or less relative to the conductive paste. If the dispersant is added in excess of 1.0% by mass, the viscosity of the conductive paste is too low, which is not desirable.
[0028] フィラー粉末は、貴金属、卑金属、カーボンなどの導電性粉末粒子を使用すること ができる。電気抵抗が小さく電気的導通が良好な貫通電極を得るためには、電気抵 抗の小さいフィラー粉末材質であることが望ましい。電気抵抗の小さいフィラー粉末 材質としては、体積抵抗率が 20 X 10— 6 Ω cm以下である鉛、白金、タングステン、二 ッケル、スズ、亜鉛、鉄などの金属を主たる成分とする材質を使用することができる。 より電気抵抗が小さく電気的導通が良好な貫通電極を得るためには、体積抵抗率が 5. O X 10_6 Q cm以下である金、銀、銅、アルミニウムなどの金属を主たる成分とする 材質を使用することがより望ましい。フィラー粉末粒子の表面酸化を防ぐため、卑金 属の粉末粒子表面に貴金属をコーティングしたものを用いることができる。例えば、 酸化し易い銅粉末粒子の表面に銀をコーティングしたフィラー粉末粒子は、銀粉末 粒子と同等の電気抵抗を示し且つ経済的であることから望ましい。 [0028] As the filler powder, conductive powder particles of noble metal, base metal, carbon and the like can be used. In order to obtain a through electrode having a small electric resistance and good electric conduction, it is desirable to use a filler powder material having a small electric resistance. Filler powder with low electric resistance The material may be used lead volume resistivity of not more than 20 X 10- 6 Ω cm, platinum, tungsten, nickel, tin, zinc, metals such as iron material whose main component. For more electrical resistance electrical continuity smaller obtain good penetration electrodes are gold volume resistivity 5. or less OX 10_ 6 Q cm, silver, copper, a metal such as aluminum material whose main component It is more desirable to use. In order to prevent the surface oxidation of the filler powder particles, base metal powder particles coated with a noble metal can be used. For example, filler powder particles in which the surface of copper powder particles that are easily oxidized are coated with silver are desirable because they exhibit the same electrical resistance as silver powder particles and are economical.
[0029] フィラー粉末粒子の形状は、球状、楕円状、 6面体や 8面体もしくはこれ以上の多面 体状、板状、フレーク状、針状、不定形、またはこれらの組合せた形状を使用すること が可能である。粒子は単体ではなく複数の粒子を結合させた粒子を使用することも 可能である。球状やフレーク状の粒子は、アトマイズ法や還元法など工業的に容易 な方法で作製可能であるため、フィラー粉末粒子としてより望ましい形状である。  [0029] The shape of the filler powder particles should be spherical, elliptical, hexahedral or octahedral or more polyhedral, plate-like, flake-like, needle-like, amorphous, or a combination thereof. Is possible. It is also possible to use not a single particle but a particle obtained by combining a plurality of particles. Spherical or flake-shaped particles can be produced by an industrially easy method such as an atomizing method or a reducing method, and thus have a more desirable shape as filler powder particles.
[0030] フィラー粉末粒子の平均粒径は、 1. O /i m-20 /i mが好ましぐ粒子形状が球状 の場合は 1. 0 μ m以上 8. 0 μ m以下、フレーク状の場合は 3. 0 μ m以上 20 μ m以 下であることが望ましい。ここでレ、ぅフイラ一粉末粒子の粒径は、導電性粘着テープに 付着させた少量のフィラー粉末粒子を、走査電子顕微鏡で観察して測定した。観察 像から測長される粒子個々の最長径を粒径とし、任意の観察視野に含まれる粒子全 ての粒径の平均値を平均粒径としている。上記範囲より小さい平均粒径のフィラー粉 末は、体積に対する比表面積が大きいので粒子が酸化されやすく望ましくない。また 、粒子同士の接点が増えるので接触抵抗も増加しやすい。一方、上記範囲より大き い平均粒径のフィラー粉末は、逆に粒子同士の接点が少なくなり電気抵抗が上がる ことと、導電ペースト硬化後の熱サイクルに対する信頼性が低くなるので望ましくない 。フレーク状のフィラー粉末は、球状フィラー粉末に比べ同一混合重量としたとき粘 度が高くなる傾向があるため、スクリーン印刷がし難くなるので、スクリーン印刷の条 件を変える必要がある。球状フィラー粉末粒子とフレーク状フイラ一粉末粒子および その他の形状のフィラー粉末粒子を混合して使用することもできる。混合することによ り、接触抵抗が小さいフレーク状フイラ一粉末粒子と、絶縁性基材との密着性に優れ た球状フィラー粉末粒子の長所を共に生かすことが可能である。 [0030] The average particle diameter of the filler powder particles is: 1. O / im-20 / im is preferred. If the particle shape is spherical, it is 1.0 μm or more and 8.0 μm or less. Is preferably not less than 3.0 μm and not more than 20 μm. Here, the particle size of the filler powder particles was measured by observing a small amount of filler powder particles adhered to the conductive adhesive tape with a scanning electron microscope. The longest diameter of each particle measured from the observation image is defined as the particle diameter, and the average value of the particle diameters of all the particles included in an arbitrary observation field is defined as the average particle diameter. A filler powder having an average particle size smaller than the above range has a large specific surface area with respect to the volume, so that the particles are easily oxidized, which is not desirable. In addition, since the number of contacts between particles increases, the contact resistance tends to increase. On the other hand, a filler powder having an average particle diameter larger than the above range is not desirable because conversely, the number of contact points between the particles is reduced and the electric resistance is increased, and the reliability with respect to the thermal cycle after the conductive paste is cured is lowered. The flake-like filler powder tends to have a higher viscosity at the same mixed weight than the spherical filler powder, so that screen printing becomes difficult. Therefore, it is necessary to change the conditions of screen printing. Spherical filler powder particles, flaked filler powder particles, and filler powder particles of other shapes may be mixed and used. By mixing, excellent adhesion between the flake filler powder particles with low contact resistance and the insulating substrate It is possible to make use of the advantages of the spherical filler powder particles.
[0031] 導電ペーストに対するフィラー粉末の混合量は導電ペースト対比で 85質量%以上 93質量%以下であることが望ましい。フィラー粉末の混合量が 85質量%より少ないと 、導電ペースト硬化後のフィラー粉末粒子同士の接点が少なくなり電気抵抗が上が ることと、導電ペースト硬化後の熱サイクルに対する信頼性が低くなるので望ましくな レ、。またフィラー粉末の混合量が 93質量%より多くなると、導電ペーストの粘度が高く なり、貫通孔へ充填しにくくなるので望ましくない。より貫通孔へ充填しやすぐ熱サイ クルに対する信頼性が高い電極を得るためには、導電ペーストに対するフィラー粉末 の混合量を 90質量%— 92質量%とすることがより望ましい。  [0031] The mixing amount of the filler powder with respect to the conductive paste is desirably 85% by mass or more and 93% by mass or less with respect to the conductive paste. If the mixing amount of the filler powder is less than 85% by mass, the number of contacts between the filler powder particles after curing of the conductive paste decreases and the electric resistance increases, and the reliability with respect to the thermal cycle after curing of the conductive paste decreases. Desirable les ,. If the mixing amount of the filler powder is more than 93% by mass, the viscosity of the conductive paste becomes high, which makes it difficult to fill the through-holes. In order to obtain an electrode with high reliability in thermal cycles as soon as it is filled into the through-holes, it is more preferable that the mixing amount of the filler powder with respect to the conductive paste is 90% by mass to 92% by mass.
[0032] 図 1 (E)に示すように絶縁性基材 10の両端面から突出している熱硬化性導電ぺー スト 30の突出部 32を含めて、絶縁性基材 10の両端面から加ェを行レ、絶縁性基材 1 0の表面から片側で 3 μ τη- 50 μ mを取り除レ、て、貫通電極 30aを持った基板 100と する。 [0032] As shown in FIG. 1 (E), the protrusions 32 of the thermosetting conductive paste 30 protruding from both end surfaces of the insulating base material 10 are applied from both end surfaces of the insulating base material 10. Then, 3 μτη−50 μm is removed from one side of the surface of the insulating base material 10 to obtain the substrate 100 having the through electrodes 30a.
[0033] 絶縁性基材 10の加工では、研削もしくはラップにより平滑な面に加工することが望 ましレ、。貫通電極付き基板 100の表面を平滑にすることで、フォトリソグラフィ一による 精度の良い微細配線パターン形成が可能となる。絶縁性基材の片面加工量 W、 W ' は、 3 μ m以上 50 μ m以下とすることが望ましレ、。加工量が 3 μ m未満では絶縁性 基材の面全体を平均的に加工することが難しぐフィラー粉末濃度の薄い領域に加 ェにより除去しきれない部分が発生し、貫通電極付き基板内に導通不良の貫通電極 が生じる可能性がある。加工量が 50 μ ΐηを超えると、加工時間が長くなるだけでなく 、厚い絶縁性基材を使用せざるを得ないため、製造コストの上昇となり好ましいもの ではない。  [0033] In the processing of the insulating base material 10, it is desirable to process it into a smooth surface by grinding or lapping. By smoothing the surface of the substrate 100 with through electrodes, it is possible to form a fine wiring pattern with high accuracy by photolithography. It is desirable that the processing amount W, W 'of one side of the insulating base material be 3 μm or more and 50 μm or less. If the processing amount is less than 3 μm, it will be difficult to process the entire surface of the insulating base material on average, and there will be portions that cannot be completely removed by processing in the region with low filler powder concentration. There is a possibility that through electrodes with poor conduction may occur. If the processing amount exceeds 50 μΐη, not only is the processing time prolonged, but also a thick insulating base material must be used, which increases the manufacturing cost and is not preferable.
[0034] 絶縁性基材 10の貫通孔 12内に充填した熱硬化性導電ペースト 30の内部を観察 すると、図 2 (A)に示すように、硬化した導電ペースト 30の突出部 32に近いところに、 硬化した導電ペースト 30の表層 34および内部 38と比較してフィラー粉末濃度の低 い領域 36が、基材 10の両端面に形成されている。この領域 36ではフィラー粉末濃 度が低いので、フィラー粉末粒子間の接触面積が少なく電気抵抗が大きくなつてい る。本発明では熱硬化性導電ペースト 30の突出部 32を含めて、絶縁性基材 10の両 表面力 加工を行って表面から片側で 3 μ m— 50 μ mを取り除くので、図 2 (B)に示 すようにフイラ一粉末濃度の低い領域 36を取り除くことができる。そのために本発明 によって得られる貫通電極付き基板 100の貫通電極 30aは導通不良の少ないものと なる。 When observing the inside of the thermosetting conductive paste 30 filled in the through holes 12 of the insulating base material 10, as shown in FIG. In addition, regions 36 having a lower filler powder concentration than the surface layer 34 and the inside 38 of the cured conductive paste 30 are formed on both end surfaces of the substrate 10. In this region 36, since the filler powder concentration is low, the contact area between the filler powder particles is small and the electric resistance is large. In the present invention, both sides of the insulating base material 10 including the protrusions 32 of the thermosetting conductive paste 30 are included. Since surface force processing is performed to remove 3 μm – 50 μm on one side from the surface, as shown in Fig. 2 (B), it is possible to remove the area 36 where the filler powder concentration is low. Therefore, the through-electrode 30a of the through-electrode-attached substrate 100 obtained by the present invention has less conduction failure.
[0035] 硬化した導電ペースト 30の表層 34に近いところにフィラー粉末濃度の薄い領域 36 が生じるのは以下の原因によると考えられる。  [0035] It is considered that the region 36 with a low filler powder concentration is formed near the surface layer 34 of the cured conductive paste 30 due to the following reasons.
[0036] 導電ペースト 30のバインダー樹脂はフイラ一粉末粒子と比較して熱膨張率が大きく 流動性に富むので、熱硬化時に導電ペースト内部から外部に染み出しやすい。また 、熱硬化時にフィラー粉末粒子は互いに凝集しやすぐバインダー樹脂の染み出し は助長されやすい。さらに、絶縁性基材 10の板厚が厚くなると充填された導電べ一 スト 30の各部分の加熱が不均一になりやすぐ導電ペースト 30の表層 34が先に硬 化する。などのために、フィラー粉末濃度の低い領域 36が形成されると推測される。  [0036] The binder resin of the conductive paste 30 has a large coefficient of thermal expansion and a high fluidity as compared with the filler powder particles, and thus easily oozes from the inside of the conductive paste to the outside during thermosetting. In addition, the filler powder particles agglomerate with each other at the time of thermal curing, and the exudation of the binder resin is easily promoted. Furthermore, when the thickness of the insulating base material 10 is increased, the heating of each portion of the filled conductive base 30 becomes uneven, and as soon as the surface layer 34 of the conductive paste 30 is hardened first. It is presumed that a region 36 having a low filler powder concentration is formed due to the above reasons.
[0037] 図 3 (A)に示す絶縁性基材 10の貫通孔 12に充填した硬化前の導電ペースト 30は 、電気オーブンの熱に曝されることにより硬化が開始する。し力し絶縁性基材 10が厚 いために導電ペースト 30内部まで熱が伝わりにくぐ電気オーブンからの直接的な放 射熱 42により、まず図 3 (B)に示される表層 34が急速に硬化されて初期硬化層が形 成される。この表層 34の硬化時には熱膨張によるバインダー樹脂の染み出しが発生 せず、ほぼ充填時のフィラー粉末とバインダー樹脂の比率を維持して硬化されると考 えられる。絶縁性基材 10の加熱が進行するに従レ、、貫通孔側壁を通して導電ペース ト 30に実線矢印 44で示すように熱が伝わり、ペースト内部でも硬化が開始する。しか し導電ペースト 30内部の硬化は、熱伝導による緩やかな硬化であるため、熱で膨張 したバインダー樹脂が表層 34との間に染み出しつつ硬化し、図 3 (C)に示すようにフ イラ一粉末濃度の低い領域 36が形成されるものと考えられる。フィラー粉末濃度の低 い領域 36ではフィラー粉末粒子間の接触が少ないので、電流通路が細くなり電気抵 抗が上昇する。本発明では導電ペースト 30の突出部 32と、基材 10の表面から 3 z m 一 50 μ mを取り除くのでフィラー粉末濃度の低い領域 36が取り除かれる。  The uncured conductive paste 30 filled in the through holes 12 of the insulating base material 10 shown in FIG. 3A starts to be cured by being exposed to the heat of an electric oven. First, the surface layer 34 shown in Fig. 3 (B) is rapidly cured by the direct heat radiation 42 from the electric oven, which transfers heat to the inside of the conductive paste 30 because the insulating base material 10 is thick. Thus, an initial hardened layer is formed. It is considered that when the surface layer 34 is cured, the binder resin does not exude due to thermal expansion, and is cured while maintaining the ratio of the filler powder and the binder resin substantially at the time of filling. As the heating of the insulating base material 10 progresses, heat is transmitted to the conductive paste 30 through the side wall of the through-hole as indicated by the solid arrow 44, and the inside of the paste starts to cure. However, since the inside of the conductive paste 30 is hardened gently by heat conduction, the binder resin expanded by heat is hardened while seeping out with the surface layer 34, and as shown in FIG. It is considered that a region 36 having a low powder concentration is formed. In the region 36 where the filler powder concentration is low, the contact between the filler powder particles is small, so that the current path becomes narrow and the electric resistance rises. In the present invention, since the protrusions 32 of the conductive paste 30 and 3 μm to 50 μm are removed from the surface of the substrate 10, the region 36 having a low filler powder concentration is removed.
実施例 1  Example 1
[0038] ポリイミド絶縁性基材とガラス一エポキシ樹脂絶縁性基材とを用いて、それらの基板 に貫通孔を形成し、貫通孔内に導電ペーストを充填硬化して貫通電極付き基板を製 作した。ポリイミド基材は 100mm角の正方形で、厚さ 1. 5mmと 3. Ommであった。 ガラス—エポキシ樹脂基材は 120mm角の正方形で、厚さは 2. Ommと 2. 4mmであ つた。 NCドリルによるマイクロ孔あけ加工機で、 200 z m径と 400 z m径の 2種類の 貫通孔を形成した。それらの貫通孔は 2mmピッチの等間隔で形成した。各条件 100 0個の貫通孔に貫通電極が形成できるだけの枚数の基材を用意し、貫通電極付き基 板を製作した。導電ペーストは、バインダー樹脂として、ビスフエノール A型エポキシ 樹脂(ェピコート 828 油化シェルエポキシ社製)と脂環式エポキシ樹脂(ST-1000 東都化成社製)を 1: 1 (質量比)で混合したものを使用し、硬化剤としてアミンァダク ト系硬化剤(MY— 24 味の素社製)、分散剤としてリン酸エステル (陰イオン界面活 性剤"ブライサーフ" 第一工業製薬社製)を使用した。硬化剤と分散剤は、導電ぺ 一スト対比でそれぞれ 0. 2質量%、 0. 2質量%添加した。フィラー粉末には平均粒 径 2. 1 / mの球状銀粒子の粉末を使用し、導電ペースト対比で 90. 5質量%添加し た。これらバインダー樹脂とフィラー粉末は三本ロールで脱泡しながら攪拌、混練し た。混練された導電ペーストの粘度は、室温における E型粘度計による測定で、 130 0— 1400Pa ' s (回転数は 0. 5RPS)であった。貫通孔への導電ペーストの充填はス クリーン印刷機を使用し、図 1 (D)に示した突出部 32の突出高さ H、 H' が共に 100 μ mとなるように充填した。導電ペーストは電気オーブンを使用して 200°Cで 60分間 加熱して硬化した。その後、図 1 (E)に示す加工量 W、 Wf が共に 20 μ mとなるよう に絶縁性基材 10の両面をラップ加工して貫通電極付き基板 100を得た。 [0038] Using a polyimide insulating base material and a glass-epoxy resin insulating base material, A through-hole was formed in the substrate, and a conductive paste was filled in the through-hole and cured to produce a substrate with a through-electrode. The polyimide substrate was a 100 mm square, 1.5 mm thick and 3. Omm thick. The glass-epoxy resin substrate was a square of 120 mm square and had a thickness of 2. Omm and 2.4 mm. Two types of through holes with a diameter of 200 zm and a diameter of 400 zm were formed with a micro drilling machine using an NC drill. These through holes were formed at equal intervals of 2 mm pitch. In each condition, as many substrates as possible were formed so that through electrodes could be formed in 1000 through holes, and a substrate with through electrodes was manufactured. The conductive paste was a 1: 1 (mass ratio) mixture of bisphenol A type epoxy resin (Epicoat 828 Yuka Shell Epoxy) and alicyclic epoxy resin (ST-1000 manufactured by Toto Kasei) as binder resins. An amine-adduct-based curing agent (MY-24, manufactured by Ajinomoto Co.) was used as a curing agent, and a phosphate ester (anionic surfactant "Blysurf" manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) was used as a dispersing agent. The curing agent and the dispersant were added in an amount of 0.2% by mass and 0.2% by mass, respectively, based on the conductive paste. Spherical silver particles having an average particle size of 2.1 / m were used as the filler powder, and 90.5% by mass of the conductive paste was added. These binder resin and filler powder were stirred and kneaded while defoaming with a three-roll mill. The viscosity of the kneaded conductive paste was 130 0 to 1400 Pa's (at a rotation speed of 0.5 RPS) as measured by an E-type viscometer at room temperature. The through-hole was filled with a conductive paste using a screen printer so that the protrusion heights H and H ′ of the protrusions 32 shown in FIG. 1 (D) were both 100 μm. The conductive paste was cured by heating in an electric oven at 200 ° C for 60 minutes. Then, to obtain a processed amount W, lapping process to a substrate with through electrodes 100 on both sides of the insulating base 10 as W f are both 20 mu m shown in FIG. 1 (E).
各条件で製作した貫通電極 1000個について両端間の抵抗を測定した。抵抗評価 結果を製作条件 (基材材質、基材厚さ、貫通孔径)とともに表 1に示している。 3. Om m厚のポリイミド基材と 2. 4mm厚のガラス一エポキシ樹脂基材を使用した貫通電極 付き基板の貫通電極では、体積抵抗率に換算して 2 X 10— 4 Ω cmよりも大きい抵抗を 示す貫通電極が全貫通電極のうち 70%以上含まれていた。また、その大半は電気 的導通が全く無い貫通電極であり、貫通電極として使用できないので「不可」の評価 とした。これは絶縁性基材が厚く貫通孔に導電ペーストが均一充填できなかったため と考えられる。 2mm以下の厚さをした貫通電極付き基板では、全ての貫通電極が体 積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗を示し、電気的導通の良好な貫通電 極が形成されていることが確認されたので「良」の評価とした。 The resistance between both ends was measured for 1000 through electrodes manufactured under each condition. The resistance evaluation results are shown in Table 1 together with the manufacturing conditions (base material, base material thickness, through-hole diameter). 3. The through electrode substrate with through electrodes using the Om m thick polyimide substrate 2. 4 mm thick glass one epoxy resin substrate of greater than 2 X 10- 4 Ω cm in terms of volume resistivity Penetrating electrodes indicating resistance contained more than 70% of all penetrating electrodes. In addition, most of them were penetrating electrodes with no electrical conduction and could not be used as penetrating electrodes. This is probably because the insulating base material was thick and the conductive paste could not be uniformly filled in the through holes. On a substrate with a through electrode with a thickness of 2 mm or less, all the through electrodes In terms of volume resistivity shows the resistivity of below 2 X 10- 4 Ω cm, was because it was confirmed that good penetration electrodes of electrical conduction are formed as the evaluation of "good".
[0040] [表 1] [0040] [Table 1]
Figure imgf000015_0001
Figure imgf000015_0001
¾ 2 ¾ 2
[0041] 純度 96%の焼結アルミナセラミックスからなる絶縁性基材と無アルカリガラス( # 17 37 コ一二ング社製)絶縁性基材とを使用して、貫通孔に充填した導電ペースト突出 部の突出高さ Hと基板加工量 Wとを変えて貫通電極付き基板を製作し、それら基板 の貫通電極の評価をした。アルミナ基材は 75mm径の円盤で厚さ 1. Ommとし、無ァ ルカリガラス基材は 150mm径の円盤で厚さ 0. 7mmとした。アルミナ基材には炭酸 ガスレーザー加工機で 150 μ m径の円形貫通孔を形成し、無アルカリガラス基材に はレジストマスクとショットブラストで 200 m径の円形貫通孔を形成した。貫通孔は 2 mmピッチの等間隔で形成し、各条件 1000個の貫通孔に貫通電極が形成できるだ けの枚数の基材を用意し、貫通電極付き基板を製作した。導電ペーストは、実施例 1 と同じものを使用した。貫通孔への導電ペーストの充填はスクリーン印刷機を使用し 、突出高さ Hを表 2に示すように変えて充填した。絶縁性基材の裏側導電ペースト突 出高さ H' は、スクリーン印刷機のスぺーサーを調整して 100 μ mとした。導電ぺー ストは電気オーブンを使用して 200°Cで 60分間加熱して熱硬化した後、絶縁性基材 の表面加工量 Wを変えてラップ加工して貫通電極付き基板を得た。このとき絶縁性 基材の裏側の加工量 W' を 20 μ ΐηとした。 [0041] Using an insulating base material made of sintered alumina ceramics having a purity of 96% and an alkali-free glass (# 1737 made by Koingen Co., Ltd.) insulating base material, conductive paste protruding into the through-holes The substrates with penetrating electrodes were manufactured by changing the protruding height H of the part and the processing amount W of the substrate, and the penetrating electrodes of those substrates were evaluated. The alumina substrate was a 75 mm diameter disk with a thickness of 1. Omm, and the alkali-free glass substrate was a 150 mm diameter disk with a thickness of 0.7 mm. Circular through holes with a diameter of 150 μm were formed on the alumina substrate with a carbon dioxide laser beam machine, and circular holes with a diameter of 200 m were formed on the non-alkali glass substrate with a resist mask and shot blasting. The through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible could be formed in each of the 1000 through-holes for each condition, and a substrate with through-electrodes was manufactured. The same conductive paste as in Example 1 was used. The through-hole was filled with the conductive paste by using a screen printing machine while changing the protrusion height H as shown in Table 2. The protrusion height H 'of the conductive paste on the back side of the insulating base material was adjusted to 100 µm by adjusting the spacer of the screen printing machine. The conductive paste was heated and cured at 200 ° C. for 60 minutes using an electric oven, and then wrapped by changing the surface processing amount W of the insulating base material to obtain a substrate with through electrodes. At this time, insulation The amount of processing W 'on the back side of the substrate was set to 20 μΐη.
[0042] 各条件の貫通電極 1000個について両端間の抵抗を測定した。抵抗評価結果を製 作条件 (基材材質、突出高さ H、基材加工量 W)とともに表 2に示している。導電べ一 ストの突出高さ Hが 50 μ m未満のときと、基材加工量 Wが 3 μ m未満のときには、体 積抵抗率に換算して 2 X 10— 4 Ω cmよりも大きい抵抗を示す貫通電極が全貫通電極 の 50%あつたので「不可」の評価とした。これは、導電ペーストの突出高さ Hもしくは 基材カ卩ェ量 Wが小さいために、フィラー粉末濃度の少ない領域 36が貫通電極内部 に残り、貫通電極の抵抗が大きくなつたものと考えられる。 50 z m以上の突出高さ H と、 3 x m以上の基材カ卩ェ量 Wの両方を兼ね備えた貫通電極付き基板では、全ての 貫通電極が体積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗を示し、電気的導通が 良好な貫通電極が形成されていることが確認されたので「良」の評価とした。 [0042] The resistance between both ends was measured for 1000 through electrodes under each condition. Table 2 shows the resistance evaluation results along with the manufacturing conditions (base material, protrusion height H, base material processing amount W). When the conductive base one strike of the projection height H is less than 50 mu m and, when the substrate processing amount W is less than 3 mu m is greater resistance than 2 X 10- 4 Ω cm in terms of the body volume resistivity Since the penetrating electrode showing 50% of the total penetrating electrodes was hot, it was evaluated as “impossible”. This is considered to be because the protruding height H of the conductive paste or the amount W of the base material was small, so that the region 36 having a low filler powder concentration remained inside the through electrode, and the resistance of the through electrode was increased. 50 and more protruding height H zm, 3 in the substrate with through electrodes combines both xm more Motozaika卩Eryou W, all the through electrodes in terms of volume resistivity 2 X 10- 4 Ω It showed a resistance of not more than cm, and it was confirmed that a through electrode having good electrical conduction was formed.
[0043] [表 2] [Table 2]
試料 基材材質 基材厚さ 貫通孔径 突出高さ 基材加工量 抵抗評価Sample Substrate material Substrate thickness Through hole diameter Projection height Substrate processing amount Resistance evaluation
T (mm) Η ( ) W ( μ ιη) 結果 T (mm) Η () W (μ ιη) result
1 アルミナ 1 . 0 1 5 0 3 8 1 0 不可1 Alumina 1.0 0 5 0 3 8 1 0 Not possible
2 5 0 1 0 良2 5 0 1 0 Good
3 8 1 1 0 良3 8 1 1 0 Good
4 1 0 3 1 0 良4 1 0 3 1 0 Good
5 7 3 2 . 8 不可5 7 3 2 .8 Not possible
6 7 1 5 良6 7 1 5 Good
7 7 5 1 5 良7 7 5 1 5 Good
8 6 8 2 5 良8 6 8 2 5 Good
9 無アル力リ 0 . 7 2 0 0 4 7 1 5 不可9 No power 0.7 .2 0 0 4 7 1 5 Not possible
1 0 ガラス 6 1 1 5 良1 0 Glass 6 1 1 5 Good
1 1 8 5 1 5 良1 1 8 5 1 5 Good
1 2 1 0 5 2 5 良1 2 1 0 5 2 5 Good
1 3 8 1 2 不可1 3 8 1 2 Not possible
1 4 8 2 3 良1 4 8 2 3 Good
1 5 8 5 1 5 良1 5 8 5 1 5 Good
1 6 8 1 2 5 良 1 6 8 1 2 5 Good
3 Three
純度 96%の焼結アルミナセラミックスからなる絶縁性基材とポリイミド絶縁性基材と を使用して、貫通孔の形成方法を変えて貫通孔の直径を変えて、貫通電極付き基板 を製作し、貫通電極の評価をした。アルミナ基材は 75mm径の円盤で厚さ 0. 6mniと し、ポリイミド基材は 100mm角の正方形で厚さ 1. 5mmとした。絶縁性基材への貫通 孔の形成には、アルミナ基材には炭酸ガス /一ザ一加工機を使用し、ポリイミド基材 にはパンチによる孔あけ加工機を使用した。貫通孔は 2mmピッチの等間隔で形成し 、各条件 1000個の貫通孔に貫通電極が形成できるだけの枚数の基材を用意し、貫 通電極付き基板を製作した。導電ペーストは、実施例 1と同じものを用いた。貫通孔 一ストの充填はスクリーン印刷機を使用し、充填した導電ペーストの突出 高さ H、 H' が共に 100 μ ΐηとなるように充填した。導電ペーストは電気オーブンを使 用して 200°Cで 60分間加熱して硬化した後、絶縁性基材の表面加工量 W、 W' 力 S 共に 20 β mとなるように表面をラップカ卩ェして貫通電極付き基板を得た。 Using an insulating substrate made of sintered alumina ceramic with a purity of 96% and a polyimide insulating substrate, the method of forming the through hole was changed to change the diameter of the through hole, and a substrate with a through electrode was manufactured. The through electrodes were evaluated. The alumina substrate was a 75 mm disk with a thickness of 0.6 mni, and the polyimide substrate was a 100 mm square square with a thickness of 1.5 mm. For the formation of through holes in the insulating base material, a carbon dioxide gas / one-piece processing machine was used for the alumina base material, and a punching machine using a punch was used for the polyimide base material. The through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible were formed for each of the 1000 through-holes in each condition so that through-electrodes could be formed, and a substrate with through-electrodes was manufactured. The same conductive paste as in Example 1 was used. Through hole Use a screen printer to fill the strike, and project the filled conductive paste. Filling was performed so that both heights H and H 'were 100 μ μη. After the conductive paste is cured by heating by using an electric oven at 200 ° C 60 min, surface treatment amount W of the insulating base, W 'force S Rappuka卩E surface together so that the 20 beta m Thus, a substrate with a through electrode was obtained.
[0045] 各条件の貫通電極 1000個について両端間の抵抗を測定した。抵抗評価結果を製 作条件 (基材材質、貫通孔径)とともに表 3に示している。 径の貫通孔を持つ たアルミナ基材を使用した基板では、体積抵抗率に換算して 2 X 10— 4 Ω cmよりも大 きい抵抗を示す貫通電極が全貫通電極のうち 70%以上あった。また、その大半は電 気的導通が全く無レ、電極であり、貫通電極として使用できなレ、ために「不可」の評価 とした。これは貫通孔の径が小さく導電ペーストが均一に充填出来なかったものと考 えられる。また、 900 z m径の貫通孔を持ったポリイミド基材を使用した基板では、充 填直後にペーストが垂れ出した貫通孔があり、導電ペーストを安定して充填出来なか つた。 30 μ m以上 800 μ m以下の径をした貫通孔を持った貫通電極付き基板では、 全ての貫通電極が体積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗を示し、電気的 導通が良好な貫通電極が形成されていることが確認されたので「良」の評価とした。 The resistance between both ends was measured for 1000 through electrodes under each condition. Table 3 shows the resistance evaluation results together with the manufacturing conditions (base material, through-hole diameter). In the substrate having an alumina base material having a through hole diameter, than 2 X 10- 4 Ω cm in terms of volume resistivity of the through electrode shown a large listening resistance was 70% or more of all the through electrodes . Most of them were electrodes with no electrical conduction and could not be used as penetrating electrodes. This is presumably because the diameter of the through-hole was too small to fill the conductive paste uniformly. In addition, in the case of a substrate using a polyimide substrate having a through hole with a diameter of 900 zm, there was a through hole from which the paste dripped immediately after filling, and the conductive paste could not be stably filled. 30 mu in a substrate with through electrodes having a through-hole was 800 mu m to less diameter than m, all the through-electrode shown the conversion to the resistance of the following 2 X 10- 4 Ω cm volume resistivity, electrical Since it was confirmed that a through electrode having good conduction was formed, the evaluation was "good".
[0046] [表 3]  [Table 3]
Figure imgf000018_0001
実施例 4
Figure imgf000018_0001
Example 4
[0047] 無アルカリガラス(# 1737 コーユング社製)絶縁性基材を用いて貫通孔を開けて 、その貫通孔に充填した導電ペーストに含まれるフィラー粉末の材質 '形状とその平 均粒径を変えて貫通電極付き基板を製作し、基板の貫通電極の評価をした。絶縁性 基材は 150mm径の円盤で厚さ 0. 7mmとした。ガラス基材上にレジストマスクを形成 した後、ショットブラストをあてて 200 μ ΐη径の円形貫通孔を形成した。貫通孔は 2m mピッチの等間隔で形成し、各条件 1000個の貫通孔に貫通電極が形成できるだけ の枚数の基材を用意し、貫通電極付き基板を作製した。導電ペーストは、バインダー 樹脂として、ビスフエノール F型エポキシ樹脂(ェピコート 807 油化シェルエポキシ社 製)とダイマー酸をダルシジノレエステル化したエポキシ樹脂(エポキシ当量 400— 50 Og/eq)を混合したものを使用し、最終的な導電ペーストの粘度が室温における E型 粘度計による評価で、 12OO- 13OOPa - s (0 5¾O. 5RPS)となるように混合比を調 整した。硬化剤にはジシアンジアミド(DICY7 油化シェルエポキシ社製)、分散剤に は陰イオン界面活性剤 (力チォーゲン 第一工業製薬社製)を使用した。硬化剤と分 散剤は、導電ペースト対比でそれぞれ 1. 0質量%、 0. 3質量%添加した。表 4に示 す平均粒径の異なったフィラー粉末を使用し、導電ペースト対比で 90. 5質量%添 加した。これらバインダー樹脂とフィラー粉末は三本ロールで脱泡しながら攪拌、混 練した。貫通孔への導電ペーストの充填はスクリーン印刷機を使用し、充填した導電 ペースト突出部の突出高さ H、 H' が共に 100 μ ΐηとなるように充填した。導電ぺー ストは電気オーブンを使用して 200°Cで 60分間加熱して硬化した。絶縁性基材の加 ェ量 W、 ' が共に 20 μ mとなるように絶縁性基材の両表面をラップ加工して貫通 電極付き基板を得た。 [0047] Using a non-alkali glass (# 1737 manufactured by Kojung) insulating base material, a through-hole is opened, and the material of the filler powder contained in the conductive paste filled in the through-hole and the shape and its flatness A substrate with a through electrode was manufactured by changing the uniform particle size, and the through electrode of the substrate was evaluated. The insulating base material was a 150 mm diameter disk with a thickness of 0.7 mm. After forming a resist mask on a glass substrate, shot blasting was applied to form a circular through hole having a diameter of 200 μηη. The through-holes were formed at equal intervals of 2 mm pitch, and as many substrates as possible were formed for each of the 1000 through-holes in each condition, and a substrate with a through-electrode was produced. The conductive paste is a mixture of bisphenol F-type epoxy resin (Epicoat 807 Yuka Shell Epoxy Co.) and epoxy resin obtained by esterifying dimer acid with darcidinole (epoxy equivalent: 400-50 Og / eq) as binder resin. The mixing ratio was adjusted such that the final viscosity of the conductive paste was 12OO-13OOPa-s (0.5¾O. 5RPS) at room temperature as evaluated by an E-type viscometer. Dicyandiamide (DICY7 Yuka Shell Epoxy Co., Ltd.) was used as a curing agent, and an anionic surfactant (manufactured by Daiichigo Daiichi Kogyo Co., Ltd.) was used as a dispersant. The hardener and the dispersant were added in an amount of 1.0% by mass and 0.3% by mass, respectively, relative to the conductive paste. Filler powders having different average particle diameters shown in Table 4 were used, and 90.5% by mass was added to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with a three-roll mill. The conductive paste was filled into the through holes using a screen printer so that the heights H and H 'of the filled conductive paste protrusions were both 100 μΐη. The conductive paste was cured by heating at 200 ° C. for 60 minutes using an electric oven. Both surfaces of the insulating substrate were wrapped so that the weights W and ′ of the insulating substrate were both 20 μm, to obtain a substrate with through electrodes.
各条件の貫通電極 1000個について両端間の抵抗を測定した。抵抗評価結果を製 作条件 (フイラ一粉末種類、平均粒径)と、下に説明する熱サイクル試験結果とともに 、表 4に示している。球状フィラー粉末の平均粒径 1. 0 x m未満およびフレーク状フ イラ一粉末の平均粒径 3. O z m未満では、体積抵抗率に換算して 20 X 10_4 Q cmよ りも大きい抵抗を示す貫通電極が全貫通電極のうち 70%以上あった。これらの試料 は抵抗評価結果を「不可」としている。これは、フィラー粉末粒子が小さく粒子表面が 樹脂に覆われてしまい粒子同士の接触が少なくなつたものと考えられる。その他の試 料では、全ての貫通電極が体積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗を示し 、電気的導通が良好な貫通電極が形成されていることが確認された。これらの試料 は抵抗評価結果「良」としてレ、る。 The resistance between both ends was measured for 1000 through electrodes under each condition. The results of the resistance evaluation are shown in Table 4 together with the manufacturing conditions (filament powder type, average particle size) and the results of the heat cycle test described below. Average particle sizes of 1. 0 xm and less than flake off Ira one powder of spherical filler powder 3. When it is less than O zm, indicating the conversion to be large resistance Ri by 20 X 10_ 4 Q cm in volume resistivity The penetrating electrodes accounted for more than 70% of all penetrating electrodes. For these samples, the resistance evaluation result is “impossible”. This is considered to be due to the fact that the filler powder particles were small and the surface of the particles was covered with resin, resulting in less contact between the particles. In other specimen, all the through electrodes showed the conversion to the resistance of the following 2 X 10- 4 Ω cm volume resistivity, the electrical conduction are formed good through electrode was confirmed. These samples Indicates that the resistance evaluation result is “good”.
[0049] [表 4] [Table 4]
Figure imgf000020_0001
Figure imgf000020_0001
[0050] 上の評価で、体積抵抗率が 2 X 10— 4 Q cm以下となった貫通電極付き基板を、 -55 °Cと 125°Cとでそれぞれ 30分間保持してそれらの温度間で加熱冷却を 1000回繰り 返す熱サイクル試験をした。 8. O z mよりも大きな平均粒径をした球状フィラー粉末 および 20 μ mよりも大きな平均粒径をしたフレーク状フイラ一粉末では、熱サイクル 試験による抵抗上昇が 3%以上あった。このように大きなフィラー粉末粒子は、粒子 同士の接点が少なくなるため、熱サイクルに対する貫通電極の信頼性が低くなつて いる。平均粒径 1. O x m以上 8. O m以下の球状フィラー粉末および平均粒径 3. 0 β m以上 20 μ m以下のフレーク状フイラ一粉末では、全ての電極で電気的な導通が 良好であり、熱サイクル試験での抵抗変化も 1%以下と良好だったので、表 4に示す ように、「良」の評価とした。 [0050] In evaluation on the substrate with through electrodes volume resistivity is equal to or less than 2 X 10- 4 Q cm, between -55 ° C and 125 ° C held to between those temperatures, respectively 30 minutes A heat cycle test in which heating and cooling were repeated 1000 times was performed. 8. For the spherical filler powder having an average particle size larger than O zm and the flaked filler powder having an average particle size larger than 20 μm, the resistance increase by the heat cycle test was 3% or more. In such a large filler powder particle, the contact between particles is reduced, so that the reliability of the through electrode with respect to the thermal cycle is reduced. Average particle diameter 1.O xm or more 8. Spherical filler powder with O m or less and average particle diameter 3.0 With flake-like filler powder with β m or more and 20 μm or less, electrical conductivity is good at all electrodes. The resistance change in the heat cycle test was as good as 1% or less. As described above, the evaluation was “good”.
[0051] 実施例 1から実施例 4で説明した様に、導電ペーストを貫通孔に絶縁性基材の表 面からの突出高さ Hが 50 μ m以上 200 μ m以下となるように充填し、熱硬化した導電 ペーストを持った絶縁性基材を得て、その絶縁性基材を研削もしくはラップで片側 3 μ m以上 50 μ m以下加工して、 300 μ m以上 2mm以下の厚さ Τをした貫通電極付 き基板を製作すると、全ての貫通電極の電気的導通が良好となり、熱サイクル試験に おける抵抗変化も小さいものが得られた。本発明の製造条件を用いて、更に製造条 件を変えて製作した貫通電極付き基板を以下に述べる。  [0051] As described in Examples 1 to 4, the conductive paste is filled into the through holes so that the protruding height H from the surface of the insulating base material is 50 µm or more and 200 µm or less. Obtain an insulating base material with a thermosetting conductive paste, and grind or wrap the insulating base material with a thickness of 3 μm or more and 50 μm or less on one side to a thickness of 300 μm or more and 2 mm or less. When a substrate with a through-electrode was manufactured, the electrical conduction of all the through-electrodes was improved, and a change in resistance in a thermal cycle test was small. A substrate with a through electrode manufactured using the manufacturing conditions of the present invention and further changing the manufacturing conditions will be described below.
実施例 5  Example 5
[0052] ここでは純度 96%の焼結アルミナセラミックスを絶縁性基材として使用して貫通電 極付き基板を製作した。その絶縁性基材は、体積抵抗率 1 X 10Μ Ω «ηで、 75mm 径の円盤で厚さ 1. Ommであった。炭酸ガスレーザー加工機で 150 /i m径の円形貫 通孔を 2mmピッチの等間隔で形成した。 3000個の貫通孔に貫通電極が形成できる だけの枚数の基材を用いた。導電ペーストは実施例 1と同じものを用いた。貫通孔へ の導電ペーストの充填はスクリーン印刷機を使用し導電ペースト突出高さ H、 H' 力 S 共に 100 μ mとなるように充填した。導電ペーストは電気オーブンを使用して 200°C で 60分間加熱して硬化した後、加工量 W、 Wr が共に 20 μ mとなるように絶縁性基 材表面をラップ加工して、 75mm径、 0. 96mm厚の貫通電極付き基板を得た。 [0052] Here, a substrate with through electrodes was manufactured using sintered alumina ceramics having a purity of 96% as an insulating base material. The insulating base material had a volume resistivity of 1 × 10ΜΩ << η and a disk having a diameter of 75 mm and a thickness of 1.0 mm. Circular through holes with a diameter of 150 / im were formed at equal intervals of 2 mm using a carbon dioxide laser processing machine. We used as many substrates as we could form through electrodes in 3000 through holes. The same conductive paste as in Example 1 was used. The conductive paste was filled into the through holes using a screen printer so that the conductive paste protrusion height H and H 'force S were both 100 µm. The conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then the surface of the insulating substrate is lapped so that the processing amounts W and Wr are both 20 μm. A substrate with a through electrode having a thickness of 0.96 mm was obtained.
[0053] 貫通電極 3000個について両端間の抵抗を測定したところ、全ての貫通電極が体 積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗であり、電気的導通が良好な貫通電 極が形成されてレ、ることが確認された。 [0053] When measuring the resistance across the 3000 through-electrodes are converted to resistance of less 2 X 10- 4 Ω cm all the through electrodes on the body volume resistivity, electrical conduction is good penetration It was confirmed that the electrodes were formed.
実施例 6  Example 6
[0054] ここでは無アルカリガラス(# 1737 コ一二ング社製)絶縁性基材を用いて貫通電 極付き基板を製作した。絶縁性基材は、体積抵抗率 3 X 1013 Q cmで、 150mm径の 円盤で厚さ 0· 7mmであった。ガラス基材上にフォトレジストマスクを形成した後、ショ ットブラストをあてて、 200 μ ΐη径の貫通孔を 2mmピッチの等間隔で形成した。 3000 個の貫通孔に貫通電極が形成できるだけの枚数の基材を用いた。導電ペーストは、 バインダー樹脂として、ビスフエノール A型エポキシ樹脂(ェピコート 828 油化シェノレ エポキシ社製)とァミン型エポキシ樹脂 (ELN—125 住友化学工業社製)を 1: 1 (質 量比)で混合したものを使用し、硬化剤としてアミンァダクト系硬化剤(PN—23 味の 素社製)、分散剤としてポリオキシエチレンソルビタン脂肪酸エステル (非イオン界面 活性剤"ソルゲン" TW 第一工業製薬社製)を使用した。硬化剤と分散剤は、導電ぺ 一スト対比でそれぞれ 0. 3質量%、 0. 2質量%添加した。フィラー粉末には還元法 で作製した平均粒径 4. 9 μ mの球状銅粒子に銀をコーティングした粉末を使用し、 導電ペースト対比で 91. 0質量%添加した。これらバインダー樹脂とフィラー粉末は 三本ロールで脱泡しながら攪拌、混練した。混鍊された導電ペーストの粘度は、室温 における E型粘度計による測定で、 1200— 1300Pa ' s (回転数は 0. 5RPS)であつ た。貫通孔への導電ペーストの充填はスクリーン印刷機を使用し、導電ペースト突出 部の突出高さ Η、Η' が共に 100 z mとなるように充填した。導電ペーストは電気ォ 一ブンを使用して 180°Cで 60分間加熱して硬化した後、加工量 W、 が共に 20 /i mとなるように絶縁性基材表面をラップ加工して、 150mm径、 0. 66mm厚の貫通 電極付き基板を得た。 Here, a substrate with a through-electrode was manufactured using an alkali-free glass (# 1737 made by KINGING Co., Ltd.) insulating base material. The insulating base material had a volume resistivity of 3 × 10 13 Q cm and was a 150 mm diameter disk with a thickness of 0.7 mm. After forming a photoresist mask on a glass substrate, shot blasting was applied to form through holes with a diameter of 200 μ μη at equal intervals of 2 mm pitch. As many substrates as possible were used to form through electrodes in 3000 through holes. The conductive paste is a bisphenol A-type epoxy resin (Epicoat 828 Yuka Shenore) as a binder resin. Epoxy) and an amine type epoxy resin (ELN-125, manufactured by Sumitomo Chemical Co., Ltd.) in a ratio of 1: 1 (mass ratio) are used, and an amine adduct-based curing agent (PN-23 Ajinomoto) is used as a curing agent. Polyoxyethylene sorbitan fatty acid ester (Nonionic surfactant "Solgen" TW Daiichi Kogyo Seiyaku Co., Ltd.) was used as a dispersant. The curing agent and the dispersant were added in an amount of 0.3% by mass and 0.2% by mass, respectively, in comparison with the conductive paste. As the filler powder, a powder obtained by coating silver on spherical copper particles having an average particle diameter of 4.9 μm prepared by a reduction method was used, and 91.0% by mass was added to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with three rolls. The viscosity of the mixed conductive paste was 1200 to 1300 Pa's (rotation speed: 0.5 RPS) as measured by an E-type viscometer at room temperature. The conductive paste was filled into the through holes using a screen printer so that the protrusion heights 導電 and Η ′ of the conductive paste protrusion were both 100 zm. The conductive paste is cured by heating it at 180 ° C for 60 minutes using an electric oven, and then lapping the surface of the insulating base material so that both processing amounts W and become 20 / im. A substrate with a through electrode having a thickness of 0.66 mm was obtained.
[0055] 貫通電極 3000個について両端間の抵抗を測定したところ、全ての貫通電極が体 積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗であり、電気的導通が良好な貫通電 極が形成されてレ、ることが確認された。 [0055] When measuring the resistance across the 3000 through-electrodes are converted to resistance of less 2 X 10- 4 Ω cm all the through electrodes on the body volume resistivity, electrical conduction is good penetration It was confirmed that the electrodes were formed.
実施例 7  Example 7
[0056] ポリイミドを絶縁性基材に使用して貫通電極付き基板を製作した。絶縁性基材は体 積抵抗率 l X 1016 Q cmで、 100mm角の正方形で厚さ 0. 5mmであった。パンチに よる孔あけ加工機で短径 130 μ m、長径 180 μ mの楕円貫通孔を 2mmピッチの等 間隔で形成した。 3000個の貫通孔に貫通電極が形成できるだけの枚数の基材を用 いた。導電ペーストは、バインダー樹脂として、ビスフエノール F型エポキシ樹脂(ェピ コート 807 油化シェルエポキシ社製)とダイマー酸をグルシジルエステル化したェポ キシ樹脂(エポキシ当量 400— 500g/eq)を 1: 3 (質量比)で混合したものを使用し 、硬化剤としてジシアンジアミド(DICY7 油化シェルエポキシ社製)、分散剤として 陰イオン界面活性剤 (力チォーゲン 第一工業製薬社製)を使用した。硬化剤と分散 剤は、導電ペースト対比でそれぞれ 1. 0質量%、 0. 3質量%添加した。フィラー粉末 には平均粒径 10. 5 / mのフレーク状銀粒子の粉末を使用し、導電ペースト対比で 9 0. 3質量%添加した。これらバインダー樹脂とフィラー粉末は三本ロールで脱泡しな がら攪拌、混練した。混練された導電ペーストの粘度は、室温における E型粘度計に よる測定で、 1300— 1400Pa ' s (回転数 0. 5RPS)であった。貫通孔への導電ぺー ストの充填はスクリーン印刷機を使用し、充填した導電ペーストの突出部の突出高さ Η、Η' が共に 100 z mとなるように充填した。導電ペーストは電気オーブンを使用し て 200°Cで 60分間加熱して硬化した後、加工量 W、 W' が共に 20 a mとなるように 絶縁性基材の両表面をラップ加工して、 100mm角、 0. 46mm厚の貫通電極付き基 板を得た。 [0056] A substrate with a through electrode was manufactured using polyimide as an insulating base material. The insulating base material had a volume resistivity of l × 10 16 Q cm, a square of 100 mm square and a thickness of 0.5 mm. Elliptical through holes with a short diameter of 130 µm and a long diameter of 180 µm were formed at equal intervals of 2 mm using a punching machine. We used as many substrates as we could form through electrodes in 3000 through holes. The conductive paste is composed of a bisphenol F-type epoxy resin (Epicoat 807 Yuka Shell Epoxy) and an epoxy resin obtained by glycidyl esterification of dimer acid (epoxy equivalent: 400-500 g / eq) as binder resin. : 3 (mass ratio), dicyandiamide (DICY7 manufactured by Yuka Shell Epoxy Co., Ltd.) as a curing agent, and an anionic surfactant (manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd.) as a dispersant. The curing agent and the dispersant were added in an amount of 1.0% by mass and 0.3% by mass, respectively, relative to the conductive paste. Filler powder Flake-shaped silver particles having an average particle diameter of 10.5 / m were used, and added in an amount of 90.3% by mass relative to the conductive paste. These binder resin and filler powder were stirred and kneaded while defoaming with three rolls. The viscosity of the kneaded conductive paste was 1300 to 1400 Pa's (rotation speed 0.5 RPS) as measured by an E-type viscometer at room temperature. The through-hole was filled with the conductive paste by using a screen printing machine so that the protruding portions Η and Η ′ of the filled conductive paste became 100 zm. The conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then wrapping both surfaces of the insulating base material so that the processing amounts W and W 'are both 20 am. A substrate with a through electrode having a square and a thickness of 0.46 mm was obtained.
[0057] 貫通電極 3000個について両端間の抵抗を測定したところ、全ての貫通電極が体 積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗であり、電気的導通が良好な貫通電 極が形成されてレ、ることが確認された。 [0057] When measuring the resistance across the 3000 through-electrodes are converted to resistance of less 2 X 10- 4 Ω cm all the through electrodes on the body volume resistivity, electrical conduction is good penetration It was confirmed that the electrodes were formed.
実施例 8  Example 8
[0058] ガラス一エポキシ樹脂絶縁性基材を使用して貫通電極付き基板を製作した。この絶 縁性基材は 200 β m厚のァラミド不織布エポキシシートを 6枚重ねたものでその体積 抵抗率は 2 X 101Q Q cmで、 120mm角の正方形で厚さ 1. 2mmであった。 NCドリノレ によるマイクロ孔あけ加工機で 250 μ m径の円形貫通孔を 2mmピッチの等間隔で形 成した。 3000個の貫通孔に貫通電極が形成できるだけの枚数の基材を用いた。導 電ペーストは、バインダー樹脂として、ビスフエノール A型エポキシ樹脂(ェピコート 8 28 油化シェルエポキシ社製)とダイマー酸をダルシジルエステル化したエポキシ樹 脂(エポキシ当量 400 500g/eq)を 1: 1 (質量比)で混合したものを使用し、硬化 剤として無水フタル酸、分散剤としてリン酸エステル(陰イオン界面活性剤"ブライサ ーフ" 第一工業製薬社製)を使用した。硬化剤と分散剤は、導電ペースト対比でそ れぞれ 2. 8質量%、 0. 2質量%添加した。フィラー粉末には平均粒径 1. の球 状銀粒子と平均粒径 1 1. 2 μ mのフレーク状銀粒子を 4: 6で混合した粉末を使用し 、導電ペースト対比で 89. 7質量%添加した。これらバインダー樹脂とフィラー粉末は 三本ロールで脱泡しながら攪拌、混練した。混練された導電ペーストの粘度は、室温 における E型粘度計による測定で、 1200— 1300Pa ' s (回転数は 0. 5RPS)であつ た。貫通孔への導電ペーストの充填はスクリーン印刷機を使用し、充填した導電ぺー ストの突出部の突出高さ Η、Η' が共に 100 / mとなるように充填した。導電ペースト は電気オーブンを使用して 200°Cで 60分間加熱して硬化した後、加工量 W、 W' が 共に 30 x mとなるように絶縁性基材の両表面をラップ加工して、 120mm角で 1. 14 mm厚の貫通電極付き基板を得た。 A substrate with a through electrode was manufactured using a glass-epoxy resin insulating base material. The insulation substrate has a volume resistivity of 200 beta m to Aramido nonwoven epoxy sheet having a thickness in those piled six in 2 X 10 1Q Q cm, and a thickness of 1. 2 mm in square 120mm square. Circular through-holes with a diameter of 250 μm were formed at equal intervals of 2 mm pitch using a micro-drilling machine using an NC drill nozzle. As many base materials as possible were used to form through electrodes in 3000 through holes. The conductive paste used was a bisphenol A type epoxy resin (Epicoat 828 Yuka Shell Epoxy Co.) and an epoxy resin obtained by darcidyl esterifying dimer acid (epoxy equivalent: 400 500 g / eq) as binder resin. (Mass ratio), phthalic anhydride as a curing agent, and phosphoric acid ester (anionic surfactant "Blysurf" manufactured by Daiichi Kogyo Seiyaku Co., Ltd.) as a dispersant were used. The hardener and the dispersant were added in an amount of 2.8% by mass and 0.2% by mass, respectively, relative to the conductive paste. The filler powder used was a powder obtained by mixing spherical silver particles having an average particle diameter of 1 and flake silver particles having an average particle diameter of 11.2 μm in a ratio of 4: 6, and 89.7% by mass relative to the conductive paste. Was added. These binder resin and filler powder were stirred and kneaded while defoaming with three rolls. The viscosity of the kneaded conductive paste is 1200-1300 Pa's (rotational speed 0.5 RPS) as measured by an E-type viscometer at room temperature. Was. The through-hole was filled with the conductive paste using a screen printer so that the protruding portions Η and Η ′ of the protruding portion of the filled conductive paste were both 100 / m. The conductive paste is cured by heating in an electric oven at 200 ° C for 60 minutes, and then wrapping both surfaces of the insulating substrate so that the processing amounts W and W 'are both 30 xm. A substrate with a through electrode having a thickness of 1.14 mm was obtained.
[0059] 貫通電極 3000個について両端間の抵抗を測定したところ、全ての貫通電極が体 積抵抗率に換算して 2 X 10— 4 Ω cm以下の抵抗であり、電気的導通が良好な貫通電 極が形成されてレ、ることが確認された。 [0059] When measuring the resistance across the 3000 through-electrodes are converted to resistance of less 2 X 10- 4 Ω cm all the through electrodes on the body volume resistivity, electrical conduction is good penetration It was confirmed that the electrodes were formed.
実施例 9  Example 9
[0060] 無アルカリガラス(# 1737 コーユング社製)絶縁性基材(150mm径で 0· 7mm厚 の円盤)を用いて、 200 ± 10 μ m径をした孔を持ったレジストマスクをガラス絶縁性基 材上に形成して、ショットブラストによってガラス絶縁性基材の反対面に達する孔を開 け貫通孔とした。ショットブラストは炭化珪素もしくはアルミナの、 # 400— # 800番手 の粉末を使用し、粉末の噴射圧を調整することで異なる表面状態の貫通孔壁面を形 成した。形成された貫通孔壁面は高低差 hO. 09-0. 55 /i mでピッチ p4. 0力ら 9. であった。貫通孔壁面の表面凹凸状態は、貫通孔中心軸に沿ってガラス絶縁 性基材を切断して、三次元表面構造解析顕微鏡を用いて測定した。図 4にガラス絶 縁性基材 10に形成した貫通孔 12を拡大断面図で示している。ガラス絶縁性基材 10 の上に通孔 91を持ったレジストマスク 90と、絶縁性基材 10に形成した貫通孔壁面 1 4の表面凹凸状態を示している。  [0060] Using a non-alkali glass (# 1737 made by Kohjung) insulating base material (a disk with a diameter of 150 mm and a thickness of 0.7 mm), a resist mask having holes with a diameter of 200 ± 10 μm was used as a glass insulating material. A hole was formed on the base material, and a hole reaching the opposite surface of the glass insulating base material by shot blasting was formed as a through hole. Shot blasting uses # 400- # 800 powder of silicon carbide or alumina, and by adjusting the injection pressure of the powder, the through-hole walls with different surface states were formed. The wall surface of the formed through hole had a height difference hO. 09-0.55 / im and a pitch of p4.0. The surface unevenness of the wall surface of the through hole was measured using a three-dimensional surface structure analysis microscope by cutting the glass insulating substrate along the center axis of the through hole. FIG. 4 is an enlarged sectional view of the through hole 12 formed in the glass insulating substrate 10. 3 shows a resist mask 90 having a through hole 91 on a glass insulating substrate 10 and a surface unevenness of a through hole wall surface 14 formed in the insulating substrate 10.
[0061] 貫通孔壁面 14の一部を拡大して示すと図 5のように貫通孔壁面には、高低差(山と 谷との高さの差) hと、山と山あるいは谷と谷とのピッチ pからなる凹凸がある。導電べ 一ストに含まれてレ、るフイラ一粉末である球状銅粉末粒子 31の平均粒径(平均直径) dを同図にあわせて示している。  When a part of the through-hole wall surface 14 is shown in an enlarged manner, as shown in FIG. 5, the through-hole wall surface has a height difference (a difference in height between a peak and a valley) h, There is unevenness consisting of pitch p. The average particle size (average diameter) d of the spherical copper powder particles 31 which are the filler powder contained in the conductive paste is also shown in FIG.
[0062] 球状銅粉末粒子(直径分布は約 0. 5 β m—約 13 μ mで、平均直径は約 4. 2, 5. [0062] Spherical copper powder particles (diameter distribution is about 0. 5 beta m-about 13 mu m, an average diameter of about 4.2, 5.
1 , 7. 5 μ ΐηの 3種類)が約 91質量%になるようにエポキシ樹脂と混練した実施例 4で 用いたのと同じ導電ペーストを、貫通孔壁面の表面凹凸状態の異なるガラス絶縁性 基材に刷り込んで貫通孔中に導電ペーストを充填した。それを 200°Cで 30分間加熱 して導電ペーストを硬化した上で、ガラス絶縁性基材の両端面から約 100 μ m突出し ている硬化した導電ペーストの突出部を含めて、基材両表面から約 20 μ ΐη研磨して 貫通電極付き基板を製作した。 The same conductive paste used in Example 4, which was kneaded with epoxy resin so that the three types of 1, 7.5 μΐη) was about 91% by mass, was used for the glass insulation with different surface irregularities on the wall surfaces of the through holes. The conductive paste was filled into the through holes by imprinting on the base material. Heat it at 200 ° C for 30 minutes After hardening the conductive paste, both sides of the base are polished by about 20 μΐη, including the hardened conductive paste projections that protrude about 100 μm from both ends of the glass insulating base material. A substrate with electrodes was manufactured.
[0063] このように製作した貫通電極付き基板 100を用いて、図 6の平面図と図 7の背面図 に示すように、基板 100の一面上には GMR素子(巨大磁気抵抗効果素子) 50を、 基板の他面上にはリード端子 54をそれぞれ貫通電極 30aに電気的接続を持つよう に形成した上で、 GMR素子 50の大きさに切断してガラス配線基板とした。表 5に示 すフイラ一粉末粒子の平均直径 dと貫通孔壁面の凹凸の高低差 h、ピッチ pを変えて 組合わせた試料 A力 Lのそれぞれ 8000個について、それらの形成工程中の取り 扱いにおける貫通電極の弛み(工程中の脱落も含む)の発生頻度を同表に合わせて 示す。 Using the substrate 100 with the through-electrode thus manufactured, as shown in the plan view of FIG. 6 and the rear view of FIG. 7, a GMR element (giant magnetoresistive element) 50 On the other surface of the substrate, lead terminals 54 were formed so as to electrically connect to the through electrodes 30a, respectively, and then cut into the size of the GMR element 50 to obtain a glass wiring substrate. The average diameter d of the powder particles of the filler shown in Table 5, the height difference h of the unevenness of the through-hole wall surface, and the pitch p were changed. The frequency of occurrence of loosening of the penetrating electrode (including dropout during the process) in Table 2 is also shown in the same table.
[0064] [表 5] [Table 5]
Figure imgf000025_0001
Figure imgf000025_0001
[0065] 表 5で、貫通電極の弛み(脱落)が少なくとも 1個生じた試料は「不可」の判定をして いる。各基板には 4個の貫通電極が設けられているため、確率的には基板の不良率 は弛み発生率の 4倍となる。弛みのある貫通電極は電気抵抗が高く GMR素子の特 性に問題を起こしたり、測定毎に電気抵抗値が変わる不安定な状態であることが確 認されているので、貫通電極の弛みは許されない。表 5で、「良」判定がされている弛 み発生率 0%の試料 C, D, H, Lは、貫通孔壁面の面粗さの凹凸がフィラー粉体粒 子 31の平均直径 dの 1Z20以上の高低差 hを持ち、そのピッチ pがフィラー粉体粒子 31の平均直径 d以上となっていた。そのために貫通電極に含まれているフィラー粉 体粒子 31が貫通孔壁面の凹凸によって壁面にとらえられて、固化したペーストが貫 通孔に固定されているので、貫通孔から貫通電極が抜け落ちるのが防止されたもの と考えられる。 [0065] In Table 5, a sample in which at least one penetrating electrode slackened (dropped) occurred was judged as "impossible". Since each substrate has four through electrodes, the probability of failure of the substrate Is four times the rate of loosening. It is confirmed that a penetrating electrode with slack has a high electric resistance, which causes a problem in the characteristics of the GMR element and an unstable state in which the electric resistance value changes with each measurement. Not done. In Table 5, Samples C, D, H, and L with a slack occurrence rate of 0% that were judged as “good” had irregularities in the surface roughness of the through-hole wall surface with the average diameter d of the filler powder particles 31. The height h was 1Z20 or more, and the pitch p was equal to or more than the average diameter d of the filler powder particles 31. As a result, the filler powder particles 31 contained in the through-electrode are caught on the wall surface by the unevenness of the through-hole wall surface, and the solidified paste is fixed in the through-hole. It is considered to have been prevented.
実施例 10  Example 10
[0066] 無アルカリガラス(# 1737 コーユング社製)絶縁性基材(150mm径で 0· 7mm厚 の円盤)を用いて、 200 ± 10 μ m径をした孔を持ったレジストマスクをガラス絶縁性基 材上に形成した。その後、弗酸系薬液によるウエットエッチングによってガラス絶縁性 基材の下側端面に達する貫通孔を開け、続いてショットブラストを孔に対してある角 度を持って行うことで貫通孔壁面の一部に凹凸部を形成した。形成した凹凸部の高 低差 hは 0. 25-0. 3 111、ピッチ は6. 1— 9. 8 μ m \貫通孔長さのうち凹凸部 長さの比率(凹凸部比率)を 0— 50%と変えた。形成した凹凸部はフイラ一粉末粒子 の平均直径 dの 1Z20以上の高低差 hを持ち、そのピッチ pが平均直径 d以上となつ ている。比率 0%とはウエットエッチングのみでショットブラストを行っていないものであ る。貫通孔に球状銅粉末粒子(直径分布は約 0. 5 μ m 約 10 μ mで、平均直径は 約 5. 1 μ m)を約 91質量%になるようにエポキシ樹脂と混練した実施例 4で用いたの と同じ導電ペーストをガラス絶縁性基材に刷り込んで貫通孔中に導電ペーストを充填 した。それを 200°Cで 30分間加熱してペーストを硬化した上で、ガラス絶縁性基材の 両端面から約 100 x m突出している硬化した導電ペーストの突出部を含めて、基材 両端面から約 20 β m研磨して貫通電極付き基板を製作した。 [0066] Using a non-alkali glass (# 1737 made by Kojung) insulating base material (a disk with a diameter of 150 mm and a thickness of 0.7 mm), a resist mask with a hole with a diameter of 200 ± 10 μm was used as a glass insulating material. It was formed on a substrate. Then, a through hole reaching the lower end surface of the glass insulating base material is formed by wet etching with a hydrofluoric acid chemical solution, and then a shot blast is performed at a certain angle with respect to the hole, so that a portion of the through hole wall surface is formed. An uneven portion was formed on the substrate. The height difference h of the formed concavo-convex part is 0.25-0.31 111, and the pitch is 6.1-9.8 μm. — Changed to 50%. The formed concavo-convex portion has a height difference h of 1Z20 or more of the average diameter d of the filler powder particles, and the pitch p thereof is equal to or more than the average diameter d. The ratio of 0% means that the shot blast is not performed only by wet etching. Example 4 in which spherical copper powder particles (diameter distribution was about 0.5 μm, about 10 μm, average diameter was about 5.1 μm) were kneaded with epoxy resin in the through-holes so as to be about 91% by mass. The same conductive paste as that used in (1) was imprinted on a glass insulating substrate, and the through-hole was filled with the conductive paste. Heat the paste at 200 ° C for 30 minutes to cure the paste, and then extend from both ends of the base, including the cured conductive paste protrusions that protrude about 100 xm from both ends of the glass insulating base. A substrate with a through electrode was manufactured by polishing 20 βm .
[0067] このように製作した貫通電極付き基板 100を用いて、図 6の平面図と図 7の背面図 に示すように、基板 100の一面上には GMR素子 50を、基板の他面上にはリード端 子 54をそれぞれ貫通電極 30aに電気的接続を持つように形成した上で、 GMR素子 50の大きさに切断してガラス配線基板とした。 GMR素子 50を基板 100上に形成す る工程中に生じた貫通電極 30aの弛み発生状況を調べて、図 8に貫通電極の弛み 発生率(%)と貫通孔壁面の凹凸部比率(%)との関係を示すグラフを示す。ショットブ ラストを行わなかった基板(凹凸部比率 0%)では弛み発生率 68%であり、凹凸部比 率 18%のところで弛み発生率はほぼゼロとなっている。凹凸部比率 20%以上であれ ば貫通電極に直接力を加えない限り貫通電極が貫通孔から抜けたり動いたりするこ とはないが、余裕をみると凹凸部比率は 30%以上とすることが良いことがわかる。 実施例 11 [0067] Using the substrate 100 with the through-electrode thus manufactured, as shown in the plan view of FIG. 6 and the rear view of FIG. After forming the lead terminals 54 so as to electrically connect to the through electrodes 30a, the GMR element The glass wiring board was cut into a size of 50. The state of loosening of the penetrating electrode 30a that occurred during the process of forming the GMR element 50 on the substrate 100 was examined. 4 shows a graph showing the relationship between The substrate without shot blasting (roughness ratio 0%) had a slack occurrence rate of 68%, and at the unevenness ratio 18%, the slack occurrence rate was almost zero. If the unevenness ratio is 20% or more, the penetrating electrode will not fall out or move through the through-hole unless a direct force is applied to the penetrating electrode.However, considering the margin, the unevenness ratio should be 30% or more. It turns out to be good. Example 11
[0068] 無アルカリガラス(# 1737 コーユング社製)絶縁性基材(150mm径で 0· 7mm厚 の円盤)を用いて、実施例 9,実施例 10とは違った形をした貫通孔を持った貫通電極 付き基板を製作した。図 9に 2点鎖線で示すように、 200 ± 10 / m径をした通孔 91を 持ったレジストマスク 90をガラス絶縁性基材 10の上に載せて、ショットブラストによつ て約 600 μ m深さの穴を開け、その穴を開けることによって残りの部分には欠けを生 じさせて貫通孔 12を形成した。ガラス絶縁性基材上に貫通孔 8000個を同時に作つ た。絶縁性基材 10の一方の端面 16上にある貫通孔 12の開口直径 dlは 250±40 At m、他面 18にある小さレ、側の開口直径 d2は 140 ±40 ^ 111、極小部 19の直径 d3 は 80 120 x mであった。すべての貫通孔 12において、小さい側の開口直径 d2は 極小部 19の直径 d3よりも大であった。  [0068] Using a non-alkali glass (# 1737 manufactured by Kojung) insulating base material (a disk with a diameter of 150mm and a thickness of 0.7mm), a through hole having a shape different from that of Examples 9 and 10 was provided. A substrate with a through electrode was fabricated. As shown by the two-dot chain line in Fig. 9, a resist mask 90 having a through hole 91 with a diameter of 200 ± 10 / m is placed on the glass insulating base material 10 and approximately 600 μm is shot blasted. A hole having a depth of m was formed, and by drilling the hole, the remaining portion was chipped to form the through hole 12. 8000 through holes were simultaneously formed on a glass insulating substrate. The opening diameter dl of the through hole 12 on one end surface 16 of the insulating base material 10 is 250 ± 40 Atm, the other side 18 has a small opening diameter, the side opening diameter d2 is 140 ± 40 ^ 111, and the minimum part 19 Had a diameter d3 of 80 120 xm. In all the through holes 12, the opening diameter d2 on the smaller side was larger than the diameter d3 of the minimum portion 19.
[0069] 球状銅粉末粒子(直径分布は約 1 μ m—約 10 μ mで、平均直径は約 7 μ mであつ た。 )の約 91質量%をエポキシ樹脂と混練した実施例 4で用いたものと同じ導電ぺー ストをガラス基材に刷り込んで貫通孔中に導電ペーストを充填した。それを 200°Cで 約 30分間加熱してペーストを硬化した上で、ガラス基材の両端面から約 100 μ m突 出している硬化した導電ペースト突出部を含めて、基材両表面から約 20 z m研磨し て貫通電極付き基板を製作した。  [0069] About 91% by mass of spherical copper powder particles (having a diameter distribution of about 1 µm to about 10 µm and an average diameter of about 7 µm) were used in Example 4 in which kneaded with an epoxy resin. The same conductive paste as that which was used was imprinted on a glass substrate, and the through-hole was filled with a conductive paste. Heat the paste at 200 ° C for about 30 minutes to cure the paste, and then from both surfaces of the base, including the cured conductive paste protrusions that protrude about 100 μm from both ends of the glass base. Polishing was performed at 20 zm to produce a substrate with through electrodes.
[0070] このようにして形成した 8000個の貫通電極を持った 150mm直径のガラス基板 100 を用いて、図 6の平面図と図 7の背面図に示すように、基板 100の一面上には GMR 素子 50を、基板の他面上にはリード端子 54をそれぞれ貫通電極 30aに電気的接続 を持つように形成した上で、 GMR素子 50の大きさに切断してガラス配線基板とした。 それらの形成工程中の取り扱いでは貫通電極 30aの脱落は生じなかった。また、この 処理工程後に行った、貫通電極の通電テストでは、導通不良は観察されなかった。 [0070] Using a glass substrate 100 having a diameter of 150 mm and having 8000 through electrodes formed in this way, as shown in the plan view of FIG. 6 and the rear view of FIG. The GMR element 50 was formed on the other surface of the substrate such that the lead terminals 54 were formed so as to have electrical connection to the through electrodes 30a, respectively, and then cut into the size of the GMR element 50 to obtain a glass wiring substrate. The handling during the forming process did not cause the penetration electrode 30a to fall off. In addition, in a conduction test of the through electrodes performed after this processing step, no conduction failure was observed.
[0071] ここでは貫通電極の極小部直径 d3は、貫通電極が含んでいる銅粉末粒子すなわ ちフイラ一粉末粒子の平均直径の 8倍よりも大きぐ具体的には 80 120 z mなので 、フィラー粉末粒子が極小部直径のなかに 95から 227個程度存在していることになり 、貫通電極の他の部分の断面は極小部直径の面積とほぼ同じかそれよりも大きな面 積をしているので、更に多くのフィラー粉末粒子を存在させていることになる。また貫 通孔の開口と極小部分との直径差があまり大きくないので導電ペーストの加熱硬化 時の収縮の差があまり大きくなぐ貫通電極の収縮による切断が生じなかったものと 考えられる。これらの理由によって通電テストで導通が良力、つたものと考えられる。  [0071] Here, the minimum diameter d3 of the penetrating electrode is larger than eight times the average diameter of the copper powder particles contained in the penetrating electrode, that is, the average diameter of the filler particles, specifically 80 120 zm. This means that 95 to 227 powder particles exist in the minimum diameter, and the cross section of the other part of the through electrode has an area approximately equal to or larger than the area of the minimum diameter. Therefore, more filler powder particles are present. Also, it is probable that because the difference in diameter between the opening of the through hole and the minimum portion was not so large, the difference in shrinkage during heating and curing of the conductive paste was so large that there was no cutting due to shrinkage of the through electrode. For these reasons, it is considered that continuity was good in the energization test.
[0072] またこの実施例で貫通孔の極小部直径 d3が 80 120 μ mで、小さい側の入口開 口直径 d2は 140 ± 40 μ mだったので、極小部直径 d3は小さい側の入口開口直径 d 2の 90%未満であった。小さレ、側の入口開口直径 d2と極小部直径 d3との差が大き いので、導電ペーストを約 200°Cに加熱して硬化した後の貫通電極とガラス部分の 収縮の差による貫通孔から貫通電極の抜け落ちや弛みを防止することができた。 実施例 12  In this example, the diameter d3 of the minimum portion of the through hole was 80 120 μm, and the diameter d2 of the inlet on the small side was 140 ± 40 μm. It was less than 90% of the diameter d2. Since the difference between the inlet opening diameter d2 of the side and the diameter d3 of the extremely small part is large, the conductive paste is heated to about 200 ° C and cured. It was possible to prevent the through electrode from falling off or loosening. Example 12
[0073] 更に違った形状をした貫通孔を持った基材の拡大断面図を図 10に示している。貫 通孔 12はガラス絶縁性基材 10のそれぞれの端面から開けられた 2個の穴 12' , 12 " 力 できており、それらの穴 12' , 12〃 は貫通孔 12の内部で連通している。両端 面それぞれにある入口開口の中心軸が互いに偏芯しており、この図に示した例では 、大きい側の穴 12' の入口開口直径 d4が約 300 x mで、小さい側の穴 12〃 の入口 開口直径 d5が約 150 z mであり、それらの偏芯は 100 μ mとしたので、それらの半径 の差以上の偏芯となっている。この貫通孔 12に充填した貫通電極も抜け落ちや弛み を防止することができた。この実施例の貫通電極では、基材の両端面から穴をそれぞ れ開ける必要がある。  FIG. 10 shows an enlarged cross-sectional view of a base material having a through hole having a different shape. The through hole 12 is formed with two holes 12 ′ and 12 ″ formed from each end face of the glass insulating base material 10, and the holes 12 ′ and 12 連 communicate inside the through hole 12. The center axes of the inlet openings on each end face are eccentric to each other, and in the example shown in this figure, the inlet opening diameter d4 of the large hole 12 'is about 300 xm and the small hole is The 12 mm inlet opening diameter d5 is about 150 zm, and their eccentricity is 100 μm, so the eccentricity is larger than the difference between their radii. In the through electrode of this embodiment, holes need to be formed from both end surfaces of the base material.
産業上の利用可能性  Industrial applicability
[0074] 絶縁性基材に形成した貫通孔に熱硬化性導電ペーストを充填し、熱硬化後に基板 表面を加工する、特別な装置を必要としない容易な方法で、電気的導通に優れた電 極を安定的に得ることが可能な、貫通電極付き基板を製造する方法を提供すること ができた。 A through hole formed in an insulating base material is filled with a thermosetting conductive paste, and the surface of the substrate is processed after the thermosetting by an easy method that does not require a special device. A method for manufacturing a substrate with a through electrode, which can stably obtain a pole, can be provided.

Claims

請求の範囲 The scope of the claims
[1] 絶縁性基材に貫通孔を開け、  [1] Open a through hole in the insulating substrate,
その貫通孔内に熱硬化性導電ペーストを充填して貫通孔の両端開口から高さ 50 μ m 200 μ mの突出部を熱硬化性導電ペーストで形成し、  Filling the through hole with a thermosetting conductive paste, forming protrusions having a height of 50 μm and 200 μm from both ends of the through hole with the thermosetting conductive paste,
熱硬化性導電ペーストを加熱硬化し、  Heat-curing the thermosetting conductive paste,
熱硬化性導電ペーストの突出部を含めて絶縁性基材の両表面から加工を行って絶 縁性基材の表面から片側で 3 /i m— 50 μ m取り除く  Processing from both surfaces of the insulating base material including the protrusions of the thermosetting conductive paste to remove 3 / i m-50 μm on one side from the surface of the insulating base material
工程からなる貫通電極付き基板の製造方法。  A method for manufacturing a substrate with through electrodes, comprising the steps of:
[2] 絶縁性基材が 300 μ m— 2mm厚である請求項 1に記載した貫通電極付き基板の 製造方法。 [2] The method for producing a substrate with a through electrode according to claim 1, wherein the insulating base material has a thickness of 300 µm-2 mm.
[3] 絶縁性基材に開ける貫通孔が 30 μ m— 800 μ m径である請求項 2に記載した貫 通電極付き基板の製造方法。  [3] The method for producing a substrate with a penetrating electrode according to claim 2, wherein the through hole formed in the insulating base material has a diameter of 30 µm to 800 µm.
[4] 熱硬化性導電ペーストで形成される突出部の高さが 70 μ m— 100 μ mである請求 項 1一 3のいずれかに記載した貫通電極付き基板の製造方法。 [4] The method for producing a substrate with a through electrode according to any one of [13] to [13], wherein the height of the protrusion formed of the thermosetting conductive paste is 70 μm to 100 μm.
[5] 熱硬化性導電ペーストは、平均粒径 1 · 0 μ m— 20 β mの導電性フィラー粉末を 85 質量%— 93質量%含み、残部実質的に熱硬化性バインダー樹脂である請求項 3に 記載した貫通電極付き基板の製造方法。 [5] The thermosetting conductive paste contains 85% to 93% by mass of a conductive filler powder having an average particle size of 1.0 μm to 20 βm , and the balance is substantially a thermosetting binder resin. 3. The method for manufacturing a substrate with through electrodes as described in 3.
[6] 熱硬化性導電ペーストは、更に 0. 2質量%— 3. 0質量%の硬化剤と 1. 0質量% 以下の分散剤を含んでいる請求項 3に記載した貫通電極付き基板の製造方法。 [6] The substrate with a through electrode according to claim 3, wherein the thermosetting conductive paste further contains 0.2% by mass to 3.0% by mass of a curing agent and 1.0% by mass or less of a dispersant. Production method.
[7] 導電性フィラー粉末が平均粒径 1. 0 a m 8. 0 μ mの球状粒子である請求項 5に 記載した貫通電極付き基板の製造方法。 7. The method for producing a substrate with through electrodes according to claim 5, wherein the conductive filler powder is spherical particles having an average particle diameter of 1.0 am 8.0 μm.
[8] 導電性フィラー粉末が平均粒径 3. 0 μ m 20 μ mのフレーク状粒子である請求項[8] The conductive filler powder is a flaky particle having an average particle size of 3.0 μm 20 μm.
5に記載した貫通電極付き基板の製造方法。 5. The method for manufacturing a substrate with a through electrode according to 5.
[9] 熱硬化性バインダー樹脂がエポキシ基を 2個以上持った液状エポキシ樹脂を主成 分として含む請求項 5に記載した貫通電極付き基板の製造方法。 9. The method for producing a substrate with a through electrode according to claim 5, wherein the thermosetting binder resin contains a liquid epoxy resin having two or more epoxy groups as a main component.
[10] 絶縁性基材に開ける貫通孔は、貫通孔内壁面の 30%以上においてその面粗さの 凹凸が充填すべき熱硬化性導電ペーストが含んでいるフィラー粉末粒子の平均粒径 の 1/20以上の高低差を持つとともに、その面粗さの凹凸のピッチが平均粒径以上 である請求項 1に記載した貫通電極付き基板の製造方法。 [10] The through-hole formed in the insulating base material has an average particle diameter of 1% or more of the filler powder particles contained in the thermosetting conductive paste to be filled with irregularities of the surface roughness in 30% or more of the inner wall surface of the through-hole. / 20 or more, and the pitch of the surface roughness is more than the average particle size 2. The method for producing a substrate with a through electrode according to claim 1, wherein:
[11] 絶縁性基材に開ける貫通孔は、その両端それぞれの開口の直径よりも小さな直径 の極小値を両端の途中に持ち、その極小値は充填すべき熱硬化性導電ペーストが 含んでいるフィラー粉末粒子の平均粒径の 8倍よりも大きい請求項 1に記載した貫通 電極付き基板の製造方法。 [11] The through-hole formed in the insulating base material has a minimum value at the middle of both ends smaller than the diameter of each opening at both ends, and the minimum value is included in the thermosetting conductive paste to be filled. 2. The method for producing a substrate with through electrodes according to claim 1, wherein the average particle diameter of the filler powder particles is larger than eight times.
[12] 貫通孔直径の極小値が両端開口の小さい側の開口直径の 90%未満である請求 項 11に記載した貫通電極付き基板の製造方法。 12. The method for producing a substrate with a through electrode according to claim 11, wherein the minimum value of the diameter of the through-hole is less than 90% of the opening diameter on the smaller side of the opening at both ends.
[13] 貫通孔直径の極小値が 80 μ mよりも大きい請求項 12に記載した貫通電極付き基 板の製造方法。 13. The method according to claim 12, wherein the minimum value of the diameter of the through hole is larger than 80 μm.
[14] 絶縁性基材に開ける貫通孔は、その両端それぞれの開口中心軸が互いに偏芯し てレ、て、その偏芯量が両開口の半径の差よりも大きレ、請求項 11に記載した貫通電極 付き基板の製造方法。  [14] The through-hole formed in the insulating base material may be such that the center axes of the openings at both ends thereof are eccentric to each other, and the amount of eccentricity is larger than the difference between the radii of both openings. The method for manufacturing a substrate with a through electrode described above.
PCT/JP2004/007354 2003-06-03 2004-05-28 Production method for feedthrough electrode-carrying substrate WO2004110116A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2003157723A JP2004363212A (en) 2003-06-03 2003-06-03 Wiring board with through-hole conductor
JP2003-157723 2003-06-03
JP2003159002A JP3627932B2 (en) 2003-06-04 2003-06-04 Manufacturing method of substrate with through electrode
JP2003-159002 2003-06-04
JP2003180477A JP2005019576A (en) 2003-06-25 2003-06-25 Wiring board having through hole conductor
JP2003-180477 2003-06-25

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0367471U (en) * 1989-11-02 1991-07-01
JPH08264955A (en) * 1995-03-22 1996-10-11 Tokuyama Corp Multilayer circuit board and manufacture thereof
JPH09181415A (en) * 1995-10-23 1997-07-11 Ibiden Co Ltd Printed wiring board
JPH11214839A (en) * 1998-01-23 1999-08-06 Kyocera Corp Production of circuit board
JP2000223810A (en) * 1999-02-01 2000-08-11 Kyocera Corp Ceramic board and its manufacture
JP2001024328A (en) * 1999-07-05 2001-01-26 Asahi Chem Ind Co Ltd Multilayered wiring board
JP2002289996A (en) * 2001-03-27 2002-10-04 Kyocera Corp Wiring board
JP2002359446A (en) * 2001-05-31 2002-12-13 Hitachi Ltd Wiring board and manufacturing method therefor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0367471U (en) * 1989-11-02 1991-07-01
JPH08264955A (en) * 1995-03-22 1996-10-11 Tokuyama Corp Multilayer circuit board and manufacture thereof
JPH09181415A (en) * 1995-10-23 1997-07-11 Ibiden Co Ltd Printed wiring board
JPH11214839A (en) * 1998-01-23 1999-08-06 Kyocera Corp Production of circuit board
JP2000223810A (en) * 1999-02-01 2000-08-11 Kyocera Corp Ceramic board and its manufacture
JP2001024328A (en) * 1999-07-05 2001-01-26 Asahi Chem Ind Co Ltd Multilayered wiring board
JP2002289996A (en) * 2001-03-27 2002-10-04 Kyocera Corp Wiring board
JP2002359446A (en) * 2001-05-31 2002-12-13 Hitachi Ltd Wiring board and manufacturing method therefor

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