WO2004085491A3 - Removal of cmp and post-cmp residue from semiconductors using supercritical carbon dioxide process - Google Patents

Removal of cmp and post-cmp residue from semiconductors using supercritical carbon dioxide process

Info

Publication number
WO2004085491A3
WO2004085491A3 PCT/US2004/009223 US2004009223W WO2004085491A3 WO 2004085491 A3 WO2004085491 A3 WO 2004085491A3 US 2004009223 W US2004009223 W US 2004009223W WO 2004085491 A3 WO2004085491 A3 WO 2004085491A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
cmp
chamber
pressure
residue
object
Prior art date
Application number
PCT/US2004/009223
Other languages
French (fr)
Other versions
WO2004085491A2 (en )
Inventor
Leeuwe Marc De
William H Mullee
Bentley J Palmer
Glenn A Roberson Jr
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration by sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C11D11/0005Special cleaning and washing methods
    • C11D11/0011Special cleaning and washing methods characterised by the objects to be cleaned
    • C11D11/0023"Hard" surfaces
    • C11D11/0047Electronic devices, e.g. PCBs, semiconductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02101Cleaning only involving supercritical fluids

Abstract

A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.
PCT/US2004/009223 1998-09-28 2004-03-24 Removal of cmp and post-cmp residue from semiconductors using supercritical carbon dioxide process WO2004085491A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10396612 US7064070B2 (en) 1998-09-28 2003-03-24 Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US10/396,612 2003-03-24

Publications (2)

Publication Number Publication Date
WO2004085491A2 true WO2004085491A2 (en) 2004-10-07
WO2004085491A3 true true WO2004085491A3 (en) 2004-11-04

Family

ID=33096796

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/009223 WO2004085491A3 (en) 1998-09-28 2004-03-24 Removal of cmp and post-cmp residue from semiconductors using supercritical carbon dioxide process

Country Status (2)

Country Link
US (1) US7064070B2 (en)
WO (1) WO2004085491A3 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
WO2003065433A1 (en) * 2002-01-28 2003-08-07 Mitsubishi Chemical Corporation Liquid detergent for semiconductor device substrate and method of cleaning
US7645344B2 (en) * 2003-10-08 2010-01-12 Micron Technology, Inc. Method of cleaning semiconductor surfaces
KR100534103B1 (en) * 2004-01-14 2005-12-06 삼성전자주식회사 Method of fabricating a microelectronic device using supercritical fluid
JP4633785B2 (en) * 2004-03-01 2011-02-23 アバンター・パフォーマンス・マテリアルズ・インコーポレイテッドAvantor Performance Materials, Inc. The cleaning composition of nanoelectronics and microelectronics
US7387973B2 (en) * 2004-09-30 2008-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving low-K dielectrics by supercritical fluid treatments
US20060280027A1 (en) * 2005-06-10 2006-12-14 Battelle Memorial Institute Method and apparatus for mixing fluids
US20090301996A1 (en) * 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
DE102006015382A1 (en) 2006-04-03 2007-10-04 Robert Bosch Gmbh Process to treat surgical implant having nano-scale pores with carbon dioxide in supercritical condition
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
US20070240734A1 (en) * 2006-04-14 2007-10-18 Ching-Wen Teng Method of cleaning post-cmp wafer
US8205625B2 (en) * 2006-11-28 2012-06-26 Ebara Corporation Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8629063B2 (en) * 2011-06-08 2014-01-14 International Business Machines Corporation Forming features on a substrate having varying feature densities
CN104380438A (en) * 2012-04-17 2015-02-25 普莱克斯技术有限公司 System for delivery of purified multiple phases of carbon dioxide to a process tool
US9937536B2 (en) * 2012-07-12 2018-04-10 Taiwan Semiconductor Manufacturing Company Limited Air purge cleaning for semiconductor polishing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944837A (en) * 1988-02-29 1990-07-31 Masaru Nishikawa Method of processing an article in a supercritical atmosphere
US5679169A (en) * 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6021791A (en) * 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices

Family Cites Families (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2439689A (en) * 1948-04-13 Method of rendering glass
US2617719A (en) * 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
US2993449A (en) * 1959-03-09 1961-07-25 Hydratomic Engineering Corp Motor-pump
US3135211A (en) * 1960-09-28 1964-06-02 Integral Motor Pump Corp Motor and pump assembly
US3642020A (en) * 1969-11-17 1972-02-15 Cameron Iron Works Inc Pressure operated{13 positive displacement shuttle valve
FR2128426B1 (en) * 1971-03-02 1980-03-07 Cnen
US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4219333B1 (en) * 1978-07-03 1984-02-28
US4349415A (en) * 1979-09-28 1982-09-14 Critical Fluid Systems, Inc. Process for separating organic liquid solutes from their solvent mixtures
US4475993A (en) * 1983-08-15 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Extraction of trace metals from fly ash
US4877530A (en) * 1984-04-25 1989-10-31 Cf Systems Corporation Liquid CO2 /cosolvent extraction
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4925790A (en) * 1985-08-30 1990-05-15 The Regents Of The University Of California Method of producing products by enzyme-catalyzed reactions in supercritical fluids
US4879004A (en) * 1987-05-07 1989-11-07 Micafil Ag Process for the extraction of oil or polychlorinated biphenyl from electrical parts through the use of solvents and for distillation of the solvents
DE3725565A1 (en) * 1987-08-01 1989-02-16 Peter Weil Method and apparatus for paint removal of objects with a tauchbehaelter with solvent
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) * 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
US4933404A (en) * 1987-11-27 1990-06-12 Battelle Memorial Institute Processes for microemulsion polymerization employing novel microemulsion systems
DE3887681D1 (en) * 1987-11-27 1994-03-17 Battelle Memorial Institute Supercritical mizellentrennung in the liquid phase reversal.
US5266205A (en) * 1988-02-04 1993-11-30 Battelle Memorial Institute Supercritical fluid reverse micelle separation
US5185296A (en) * 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
CA2027550C (en) * 1989-02-16 1995-12-26 Janusz B. Pawliszyn Apparatus and method for delivering supercritical fluid
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
US4923828A (en) * 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JP2888253B2 (en) * 1989-07-20 1999-05-10 富士通株式会社 Apparatus for chemical vapor deposition and its implementation
US5213619A (en) * 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5196134A (en) * 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5269850A (en) * 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
US5370741A (en) * 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5071485A (en) * 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5285332A (en) * 1990-09-28 1994-02-08 Matsushita Electric Industrial Co., Ltd. Tape loading device with reduced tape running load and simplified construction for magnetic recording and/or reproducing apparatus
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP2782560B2 (en) * 1990-12-12 1998-08-06 富士写真フイルム株式会社 Processing method of stabilizing the processing solution and a silver halide color photographic light-sensitive material
US5306350A (en) * 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
CA2059841A1 (en) * 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
US5185058A (en) * 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
US5201960A (en) * 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
EP0514337B1 (en) * 1991-05-17 1995-11-22 Ciba-Geigy Ag Process for dyeing hydrophobic textile material with disperse dyestuffs in supercritical CO2
US5274129A (en) * 1991-06-12 1993-12-28 Idaho Research Foundation, Inc. Hydroxamic acid crown ethers
US5730874A (en) 1991-06-12 1998-03-24 Idaho Research Foundation, Inc. Extraction of metals using supercritical fluid and chelate forming legand
US5356538A (en) * 1991-06-12 1994-10-18 Idaho Research Foundation, Inc. Supercritical fluid extraction
US5225173A (en) * 1991-06-12 1993-07-06 Idaho Research Foundation, Inc. Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors
US5174917A (en) * 1991-07-19 1992-12-29 Monsanto Company Compositions containing n-ethyl hydroxamic acid chelants
US5320742A (en) * 1991-08-15 1994-06-14 Mobil Oil Corporation Gasoline upgrading process
US5431843A (en) * 1991-09-04 1995-07-11 The Clorox Company Cleaning through perhydrolysis conducted in dense fluid medium
GB2259525B (en) * 1991-09-11 1995-06-28 Ciba Geigy Ag Process for dyeing cellulosic textile material with disperse dyes
EP0543779A1 (en) * 1991-11-20 1993-05-26 Ciba-Geigy Ag Process for optical bleaching of hydrophobic textile material with disperse optical brightness in supercritical CO2
CA2079629A1 (en) * 1991-12-12 1993-06-13 David P. Jackson Coating process using dense phase gas
EP0617713A1 (en) 1991-12-18 1994-10-05 Schering Corporation Method for removing residual additives from elastomeric articles
US5474812A (en) * 1992-01-10 1995-12-12 Amann & Sohne Gmbh & Co. Method for the application of a lubricant on a sewing yarn
US5688879A (en) 1992-03-27 1997-11-18 The University Of North Carolina At Chapel Hill Method of making fluoropolymers
JPH0613361A (en) * 1992-06-26 1994-01-21 Tokyo Electron Ltd Processing apparatus
US5401322A (en) * 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US5352327A (en) * 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer
US5370742A (en) * 1992-07-13 1994-12-06 The Clorox Company Liquid/supercritical cleaning with decreased polymer damage
US5285352A (en) * 1992-07-15 1994-02-08 Motorola, Inc. Pad array semiconductor device with thermal conductor and process for making the same
US5456759A (en) * 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5316591A (en) * 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
US5261965A (en) * 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
EP0591595A1 (en) 1992-10-08 1994-04-13 International Business Machines Corporation Molecular recording/reproducing method and recording medium
US5294261A (en) * 1992-11-02 1994-03-15 Air Products And Chemicals, Inc. Surface cleaning using an argon or nitrogen aerosol
US5328722A (en) * 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5514220A (en) 1992-12-09 1996-05-07 Wetmore; Paula M. Pressure pulse cleaning
WO1994014240A1 (en) 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
JP3356480B2 (en) * 1993-03-18 2002-12-16 株式会社帝国電機製作所 No leakage pump
US5403665A (en) * 1993-06-18 1995-04-04 Regents Of The University Of California Method of applying a monolayer lubricant to micromachines
US5312882A (en) * 1993-07-30 1994-05-17 The University Of North Carolina At Chapel Hill Heterogeneous polymerization in carbon dioxide
JP3338134B2 (en) * 1993-08-02 2002-10-28 株式会社東芝 Semiconductor wafer processing method
US5364497A (en) * 1993-08-04 1994-11-15 Analog Devices, Inc. Method for fabricating microstructures using temporary bridges
US5370740A (en) * 1993-10-01 1994-12-06 Hughes Aircraft Company Chemical decomposition by sonication in liquid carbon dioxide
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5417768A (en) * 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
EP0665582B1 (en) 1994-01-28 2001-03-14 Wako Pure Chemical Industries, Ltd Surface treating agents and treating process for semiconductors
US5641887A (en) 1994-04-01 1997-06-24 University Of Pittsburgh Extraction of metals in carbon dioxide and chelating agents therefor
DE69523208D1 (en) * 1994-04-08 2001-11-22 Texas Instruments Inc A process for purifying semiconductor wafers by means of liquefied gases
JP3320549B2 (en) 1994-04-26 2002-09-03 クロリンエンジニアズ株式会社 Film removal method and a coating removers
US5482564A (en) * 1994-06-21 1996-01-09 Texas Instruments Incorporated Method of unsticking components of micro-mechanical devices
US5637151A (en) 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5522938A (en) 1994-08-08 1996-06-04 Texas Instruments Incorporated Particle removal in supercritical liquids using single frequency acoustic waves
US6262510B1 (en) * 1994-09-22 2001-07-17 Iancu Lungu Electronically switched reluctance motor
US5501761A (en) 1994-10-18 1996-03-26 At&T Corp. Method for stripping conformal coatings from circuit boards
US5629918A (en) 1995-01-20 1997-05-13 The Regents Of The University Of California Electromagnetically actuated micromachined flap
JP3277114B2 (en) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション A method for manufacturing a negative tone resist image
DE19506404C1 (en) 1995-02-23 1996-03-14 Siemens Ag Separating and drying micro-mechanical elements without sticking
US5676705A (en) 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5683977A (en) 1995-03-06 1997-11-04 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5681398A (en) 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JPH08264500A (en) 1995-03-27 1996-10-11 Sony Corp Cleaning of substrate
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
US5725987A (en) 1996-11-01 1998-03-10 Xerox Corporation Supercritical processes
US5714299A (en) 1996-11-04 1998-02-03 Xerox Corporation Processes for toner additives with liquid carbon dioxide
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6465403B1 (en) * 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6673521B2 (en) * 2000-12-12 2004-01-06 Lnternational Business Machines Corporation Supercritical fluid(SCF) silylation process
JP2002237481A (en) * 2001-02-09 2002-08-23 Kobe Steel Ltd Method of cleaning microscopic structure
US6635565B2 (en) * 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
US6958123B2 (en) * 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US6509136B1 (en) * 2001-06-27 2003-01-21 International Business Machines Corporation Process of drying a cast polymeric film disposed on a workpiece
US6583067B2 (en) * 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US6979654B2 (en) * 2001-07-03 2005-12-27 United Microelectronics Corp. Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping process
JP3978023B2 (en) * 2001-12-03 2007-09-19 株式会社神戸製鋼所 High-pressure processing method
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
JP2003224099A (en) * 2002-01-30 2003-08-08 Sony Corp Surface treatment method
CN1296771C (en) * 2002-03-04 2007-01-24 东京毅力科创株式会社 Method of passivating of low dielectric materials in wafer processing
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US20030217764A1 (en) * 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
US20040011386A1 (en) * 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944837A (en) * 1988-02-29 1990-07-31 Masaru Nishikawa Method of processing an article in a supercritical atmosphere
US5679169A (en) * 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6021791A (en) * 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices

Also Published As

Publication number Publication date Type
US7064070B2 (en) 2006-06-20 grant
WO2004085491A2 (en) 2004-10-07 application
US20040142564A1 (en) 2004-07-22 application

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