WO2004075305A1 - Semi-conductor component with an encapsulation made of elastic material - Google Patents

Semi-conductor component with an encapsulation made of elastic material Download PDF

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Publication number
WO2004075305A1
WO2004075305A1 PCT/EP2003/013180 EP0313180W WO2004075305A1 WO 2004075305 A1 WO2004075305 A1 WO 2004075305A1 EP 0313180 W EP0313180 W EP 0313180W WO 2004075305 A1 WO2004075305 A1 WO 2004075305A1
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WO
WIPO (PCT)
Prior art keywords
encapsulation
semiconductor component
chip
component according
elastic material
Prior art date
Application number
PCT/EP2003/013180
Other languages
German (de)
French (fr)
Inventor
Peter MÜHLECK
Jürgen Riedel
Bernd Gebhard
Heinz Nather
Original Assignee
Vishay Semiconductor Gmbh
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Application filed by Vishay Semiconductor Gmbh filed Critical Vishay Semiconductor Gmbh
Priority to AU2003292093A priority Critical patent/AU2003292093A1/en
Publication of WO2004075305A1 publication Critical patent/WO2004075305A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Definitions

  • the invention relates to a semiconductor component with a semiconductor chip and an encapsulation to protect the chip from damage.
  • encapsulation is intended on the one hand to protect the semiconductor chip from mechanical damage.
  • the encapsulation is intended to protect the chip from moisture and harmful substances from the environment, in particular from the surrounding air, so that these substances do not undesirably diffuse into the semiconductor layers of the chip.
  • known chips are housed, for example, with epoxy resins.
  • such encapsulations can also have adverse effects.
  • such encapsulations can exert an undesirably high mechanical pressure on the semiconductor chip in certain temperature ranges, or the encapsulations themselves tend to crack at extreme temperatures, so that the protective function explained can no longer be fully performed. This can lead to degradation or complete failure of the component.
  • This object is achieved by a semiconductor component with the features according to claim 1, and in particular in that the encapsulation is made of an elastic material.
  • all or at least some outermost housing walls are made of a soft, dimensionally stable material.
  • the inside of this encapsulation can rest directly on the chip or on an oxide layer formed thereon.
  • an elastic material ensures, on the one hand, that the encapsulation can follow possible changes in the chip geometry at extreme temperatures or extreme temperature changes, without exerting mechanical stress on the chip or being damaged due to the deformation itself. Strong sudden changes in temperature (temperature shocks) also prove to be harmless. On the other hand, a certain elasticity of the encapsulation remains guaranteed even in extreme temperature ranges, so that the encapsulation can still effectively protect the chip against mechanical damage even at these extreme temperatures.
  • extreme temperatures are understood to be temperatures down to -40 ° C. and even -65 ° C. on the one hand and up to + 140 ° C. and even + 150 ° C. on the other.
  • the semiconductor component according to the invention is also distinguished by better cyclical strength, that is to say by better stability with respect to regular temperature fluctuations.
  • the mechanical stress on the chip is significantly reduced compared to conventional housings, so that there is in particular no unwanted shearing off of bond wires. Furthermore, an undesired detachment of the encapsulation from the chip (delamination) is avoided.
  • a particular advantage is that the encapsulation can continue to be manufactured in the course of a conventional manufacturing process, so that inexpensive manufacture is possible.
  • standard processes such as casting, injection molding (molding) or immersion processes can be used, as described for example for a light-emitting diode strip in DE 43 40 864 AI.
  • a particular advantage for optoelectronic semiconductor components is that the encapsulation retains its optical parameters even in the case of extreme temperatures or extreme temperature fluctuations due to the elastic design. In particular, there is no change in the wavelength dependence of the transmission behavior due to a mechanical pressure when there is a change in temperature.
  • the encapsulation is made from solid silicone, in particular from a silicone rubber.
  • silicone By using silicone, the encapsulation can be made so elastic that there is no mechanical stress on the packaged chip even at extreme temperatures and the chip remains protected from external damage. Silicone does not tend to crack easily even at extreme temperatures.
  • silicone offers sufficient protection against moisture or the diffusion of undesirable substances and can be brought into direct contact with a semiconductor chip without any problem, since it is of the usual purity itself does not contain any harmful substances. At the same time, silicone is easy to process and can therefore be easily integrated into conventional manufacturing processes.
  • all elastomers are basically suitable for use as elastic encapsulation materials, in particular rubber, synthetic rubber, silicone rubber or thermoplastically processable elastomers.
  • the elastic encapsulation can simultaneously serve as a light guide or even as a beam-shaping light guide.
  • the encapsulation can simultaneously form the transmission optics of a light-emitting diode or the reception optics of a photodiode.
  • the encapsulation material is transparent for the wavelength range in question. This is particularly easy to do with silicone.
  • the semiconductor component can also have an IC chip (Integrated Circuit) with a plurality of integrated circuits.
  • IC chip Integrated Circuit
  • the elastic encapsulation material is between 1 and 500 N / mm 2 . Such elasticity ensures that the chip does not experience any severe mechanical stress, even at extreme temperatures and severe deformations.
  • Fig. 1 is a perspective view of a light emitting diode
  • FIG. 2 is a perspective view of an IC device.
  • FIG. 1 shows a light-emitting diode in which a cuboidal encapsulation 11 made of transparent silicone also serves as a light guide for the emitted light.
  • connection legs 13, 15 protrude from the encapsulation 11.
  • the actual light-emitting diode chip 19 is arranged within a reflector recess 17 of the connection leg 13. This is connected to the other connection leg 15 via a bonding wire 21.
  • the light-emitting diode shown in FIG. 1 is used to generate light in a manner known per se.
  • the light emitted by the diode chip 19 is guided by the encapsulation material to an outside, in particular to the front facing upwards in FIG. 1.
  • the use of elastic silicone for the encapsulation 11 has the advantage that the encapsulation 11 does not exert any mechanical stress on the diode chip 19 even at extreme temperatures.
  • the encapsulation 11 can also protect the diode chip 19 better against certain, in particular blunt, mechanical influences than a conventional housing made of epoxy resin.
  • the diode chip 19 can also be attached to the connecting pin 13 within the reflector recess 17 at certain points or over a wide area by means of a non-elastic material. However, this is not mandatory.
  • FIG. 2 shows an IC chip 31 with, for example, eight connection pins 33, four of which can be seen in FIG. 2.
  • the IC chip 31 is hermetically encased by a cuboid encapsulation 35, with only the connecting legs 33 protruding from the encapsulation 35.
  • the encapsulation 35 thus forms the only and outermost outer shell of the component shown, and it lies on the inside directly against the IC chip 31. Since this is not an optical component, the encapsulation 35 does not necessarily have to be transparent.
  • the encapsulation 35 consists of an elastic material, in particular of silicone rubber or another elastomer. This ensures that the encapsulation 35 does not exert any mechanical stress on the IC chip 31 due to temperature-related changes in geometry, even at extreme temperatures. As a result, the IC chip 31 can also be used at extreme temperatures and is thereby protected from external damage by the encapsulation 35. LIST OF REFERENCE NUMBERS

Abstract

The invention relates to a semi-conductor component comprising a semi-conductor chip and an encapsulation for protecting the chip from damages. The encapsulation is made of an elastic material, for example, silicon.

Description

HALBLEITERBAUELEMENT MIT VERKAPSELUNG AUS EINEM ELASTISCHEN MATERIAL SEMICONDUCTOR COMPONENT WITH ENCLOSURE MADE OF AN ELASTIC MATERIAL
Die Erfindung betrifft ein Halbleiterbauteil mit einem Halbleiter-Chip und einer Verkapselung zum Schutz des Chips vor Beschädigungen. Bei diskreten Halbleiterbauteilen, wie Dioden oder Transistoren, und bei integrierten Schaltkreisen soll eine Verkapselung den Halbleiter-Chip zum Einen vor mechanischer Beschädigung schützen. Zum Anderen soll die Verkapselung den Chip vor Feuchtigkeit und schädlichen Substanzen aus der Umgebung, insbesondere aus der umgebenden Luft schützen, so dass diese Substanzen nicht unerwünscht in die Halbleiterschichten des Chips eindiffundieren. Zu diesem Zweck werden bekannte Chips beispielsweise mit Epoxidharzen gehaust.The invention relates to a semiconductor component with a semiconductor chip and an encapsulation to protect the chip from damage. In the case of discrete semiconductor components, such as diodes or transistors, and in the case of integrated circuits, encapsulation is intended on the one hand to protect the semiconductor chip from mechanical damage. On the other hand, the encapsulation is intended to protect the chip from moisture and harmful substances from the environment, in particular from the surrounding air, so that these substances do not undesirably diffuse into the semiconductor layers of the chip. For this purpose, known chips are housed, for example, with epoxy resins.
Bei extremen Temperaturen oder bei extremen Temperaturschwankungen können derartige Verkapselungen jedoch auch nachteilige Auswirkungen zeigen. Beispielsweise können derartige Verkapselungen in bestimmten Temperaturbereichen einen unerwünscht starken mechanischen Druck auf den Halbleiter-Chip ausüben, oder die Verkapselungen selbst neigen bei extremen Temperaturen zu Rissbildung, so dass die erläuterte Schutzfunktion nicht mehr vollständig ausgeübt werden kann. Dies kann zu einer Degradation oder zu einem vollständigen Ausfall des Bauteils führen.At extreme temperatures or extreme temperature fluctuations, however, such encapsulations can also have adverse effects. For example, such encapsulations can exert an undesirably high mechanical pressure on the semiconductor chip in certain temperature ranges, or the encapsulations themselves tend to crack at extreme temperatures, so that the protective function explained can no longer be fully performed. This can lead to degradation or complete failure of the component.
Es ist daher eine Aufgabe der Erfindung, ein Halbleiterbauteil mit einer Verkapselung zu schaffen, die auch bei extremen Temperaturen oder extremen Temperaturschwankungen einen hinreichenden Schutz des Chips gewährleistet. Diese Aufgabe wird durch ein Halbleiterbauteil mit den Merkmalen gemäß Anspruch 1 gelöst, und insbesondere dadurch, dass die Verkapselung aus einem elastischen Material gefertigt ist.It is therefore an object of the invention to provide a semiconductor component with an encapsulation which ensures adequate protection of the chip even at extreme temperatures or extreme temperature fluctuations. This object is achieved by a semiconductor component with the features according to claim 1, and in particular in that the encapsulation is made of an elastic material.
Bei einem derartigen Halbleiterbauteil bestehen also sämtliche oder zumindest einige äußerste Gehäusewandungen aus einem weichen, formstabilen Material. Die Innenseite dieser Verkapselung kann direkt an dem Chip oder an einer hieran ausgebildeten Oxidschicht anliegen.In such a semiconductor component, all or at least some outermost housing walls are made of a soft, dimensionally stable material. The inside of this encapsulation can rest directly on the chip or on an oxide layer formed thereon.
Durch den Einsatz eines elastischen Materials ist zum Einen gewährleistet, dass die Verkapslung möglichen Änderungen der Chipgeometrie bei extremen Temperaturen oder extremen Temperaturänderungen folgen kann, ohne dabei mechanischen Stress auf den Chip auszuüben oder aufgrund der Verformung selbst beschädigt zu werden. Auch starke plötzliche Temperaturänderungen (Temperaturschocks) erweisen sich dabei als unschädlich. Zum Anderen bleibt selbst in extremen Temperaturbereichen eine gewisse Elastizität der Verkapselung gewährleistet, so dass die Verkapselung auch bei diesen extremen Temperaturen den Chip weiterhin wirksam vor mechanischer Beschädigung zu schützen vermag.The use of an elastic material ensures, on the one hand, that the encapsulation can follow possible changes in the chip geometry at extreme temperatures or extreme temperature changes, without exerting mechanical stress on the chip or being damaged due to the deformation itself. Strong sudden changes in temperature (temperature shocks) also prove to be harmless. On the other hand, a certain elasticity of the encapsulation remains guaranteed even in extreme temperature ranges, so that the encapsulation can still effectively protect the chip against mechanical damage even at these extreme temperatures.
Als extreme Temperaturen sind im Zusammenhang mit der Erfindung Temperaturen bis zu -40°C und sogar -65°C einerseits und bis zu +140°C und sogar +150°C andererseits zu verstehen.In connection with the invention, extreme temperatures are understood to be temperatures down to -40 ° C. and even -65 ° C. on the one hand and up to + 140 ° C. and even + 150 ° C. on the other.
Somit ist ein Einsatz des Halbleiterbauteils innerhalb eines weiteren Temperaturbereichs möglich als bei einem Halbleiterbauteil mit einem herkömmlichen Gehäuse aus Epoxidharz oder Moldmasse, bei dem es leichter zu mechanischem Stress oder zu einer Rissbildung kommt. Das erfindungsgemäße Halbleiterbauteil zeichnet sich außerdem durch eine bessere Zykelfestigkeit aus, also durch eine bessere Stabilität gegenüber regelmäßigen Temperaturschwankungen. Der mechanische Stress auf den Chip ist gegenüber herkömmlichen Gehäusen deutlich verringert, so dass es insbesondere nicht zu einem unerwünschten Abscheren von Bonddrähten kommt. Ferner wird auch eine unerwünschte Ablösung der Verkapselung von dem Chip (Delamination) vermieden.It is therefore possible to use the semiconductor component within a wider temperature range than in the case of a semiconductor component with a conventional housing made of epoxy resin or molding compound, in which mechanical stress or crack formation are more likely. The semiconductor component according to the invention is also distinguished by better cyclical strength, that is to say by better stability with respect to regular temperature fluctuations. The mechanical stress on the chip is significantly reduced compared to conventional housings, so that there is in particular no unwanted shearing off of bond wires. Furthermore, an undesired detachment of the encapsulation from the chip (delamination) is avoided.
Ein besonderer Vorteil besteht darin, dass die Verkapselung weiterhin im Rahmen eines herkömmlichen Herstellungsprozesses gefertigt werden kann, so dass eine kostengünstige Herstellung möglich ist. Insbesondere können Standardprozesse wie Gießen, Spritzgießen (Molden) oder Eintauchprozesse verwendet werden, wie beispielsweise für einen Leuchtdiodenstreifen in der DE 43 40 864 AI beschrieben.A particular advantage is that the encapsulation can continue to be manufactured in the course of a conventional manufacturing process, so that inexpensive manufacture is possible. In particular, standard processes such as casting, injection molding (molding) or immersion processes can be used, as described for example for a light-emitting diode strip in DE 43 40 864 AI.
Ein besonderer Vorteil für optoelektronische Halbleiterbauteile ist darin zu sehen, dass die Verkapselung aufgrund der elastischen Ausbildung auch bei extremen Temperaturen oder extremen Temperaturschwankungen ihre optischen Parameter beibehält. Insbesondere kommt es zu keiner Änderung der Wellenlängenabhängigkeit des Transmissionsverhaltens aufgrund eines mechanischen Drucks bei einer Temperaturänderung.A particular advantage for optoelectronic semiconductor components is that the encapsulation retains its optical parameters even in the case of extreme temperatures or extreme temperature fluctuations due to the elastic design. In particular, there is no change in the wavelength dependence of the transmission behavior due to a mechanical pressure when there is a change in temperature.
Es ist bevorzugt, wenn die Verkapselung aus festem Silikon, insbesondere aus einem Silikongummi gefertigt ist. Durch Einsatz von Silikon kann nämlich die Verkapselung derartig elastisch ausgebildet sein, dass es auch bei extremen Temperaturen zu keiner mechanischen Stresseinwirkung auf den gehäusten Chip kommt und der Chip vor Beschädigungen von außen geschützt bleibt. Silikon neigt selbst bei extremen Temperaturen nicht leicht zu Rissbildung. Außerdem bietet Silikon einen hinreichenden Schutz gegenüber Feuchtigkeit oder dem Eindiffundieren unerwünschter Substanzen und kann ohne weiteres in direkten Kontakt mit einem Halbleiterchip gebracht werden, da es bei üblicher Reinheit selbst keine schädlichen Substanzen enthält. Gleichzeitig ist Silikon einfach zu verarbeiten und kann deshalb in herkömmliche Herstellungsprozesse leicht integriert werden.It is preferred if the encapsulation is made from solid silicone, in particular from a silicone rubber. By using silicone, the encapsulation can be made so elastic that there is no mechanical stress on the packaged chip even at extreme temperatures and the chip remains protected from external damage. Silicone does not tend to crack easily even at extreme temperatures. In addition, silicone offers sufficient protection against moisture or the diffusion of undesirable substances and can be brought into direct contact with a semiconductor chip without any problem, since it is of the usual purity itself does not contain any harmful substances. At the same time, silicone is easy to process and can therefore be easily integrated into conventional manufacturing processes.
Im Übrigen sind grundsätzlich alle Elastomere für den Einsatz als elastische Verkapselungsmaterialien geeignet, insbesondere Gummi, synthetischer Kautschuk, Silikonkautschuk oder thermoplastisch verarbeitbare Elastomere.Incidentally, all elastomers are basically suitable for use as elastic encapsulation materials, in particular rubber, synthetic rubber, silicone rubber or thermoplastically processable elastomers.
Falls es sich bei dem Halbleiterbauteil um ein optoelektronisches Halbleiterbauteil handelt, kann die elastische Verkapselung gleichzeitig als Lichtleiter oder sogar als strahlformender Lichtleiter dienen. Beispielsweise kann die Verkapselung gleichzeitig die Sendeoptik einer lichtemittierenden Diode oder die Empfangsoptik einer Fotodiode bilden.If the semiconductor component is an optoelectronic semiconductor component, the elastic encapsulation can simultaneously serve as a light guide or even as a beam-shaping light guide. For example, the encapsulation can simultaneously form the transmission optics of a light-emitting diode or the reception optics of a photodiode.
Insbesondere bei derartigen optoelektronischen Halbleiterbauteilen ist es von Vorteil, wenn das Verkapselungsmaterial für den betreffenden Wellen- längenbereich transparent ist. Dies ist insbesondere bei Silikon leicht zu bewerkstelligen .In the case of such optoelectronic semiconductor components in particular, it is advantageous if the encapsulation material is transparent for the wavelength range in question. This is particularly easy to do with silicone.
Alternativ zu der erläuterten Ausbildung als Optobauteil kann das Halbleiterbauteil auch einen IC-Chip (Integrated Circuit) mit mehreren integrierten Schaltkreisen aufweisen.As an alternative to the embodiment described as an optical component, the semiconductor component can also have an IC chip (Integrated Circuit) with a plurality of integrated circuits.
Es ist bevorzugt, wenn eine Frontseite und die hieran angrenzenden Seitenwände des Halbleiterbauteils mit der elastischen Verkapselung versehen sind. Besonders vorteilhaft ist es, wenn zusätzlich auch eine Rückseite des Halbleiterbauteils mit der Verkapselung versehen ist, so dass diese den Chip im Wesentlichen vollständig umschließt, abgesehen von den erforderlichen elektrischen Kontaktierungen. Schließlich ist es auch bevorzugt, wenn der Elastizitätsmodul des Verkap- selungsmaterials zwischen 1 und 500 N/mm2 beträgt. Bei einer derartigen Elastizität ist gewährleistet, dass der Chip selbst bei extremen Temperaturen und starken Verformungen keine schwerwiegende mechanische Stresseinwirkung erfährt.It is preferred if a front side and the side walls of the semiconductor component adjoining it are provided with the elastic encapsulation. It is particularly advantageous if the back of the semiconductor component is additionally provided with the encapsulation, so that it essentially completely surrounds the chip, apart from the required electrical contacts. Finally, it is also preferred if the elastic modulus of the encapsulation material is between 1 and 500 N / mm 2 . Such elasticity ensures that the chip does not experience any severe mechanical stress, even at extreme temperatures and severe deformations.
Weitere Ausführungsformen sind in den Unteransprüchen genannt.Further embodiments are mentioned in the subclaims.
Die Erfindung wird nachfolgend beispielhaft unter Bezugnahme auf die Zeichnungen erläutert.The invention is explained below by way of example with reference to the drawings.
Fig. 1 ist eine Perspektivansicht einer Leuchtdiode, undFig. 1 is a perspective view of a light emitting diode, and
Fig. 2 ist eine Perspektivansicht eines IC-Bauteils.2 is a perspective view of an IC device.
Fig. 1 zeigt eine lichtemittierende Diode, bei der eine quaderförmige Verkapselung 11 aus transparentem Silikon gleichzeitig als Lichtleiter für das ausgesandte Licht dient.1 shows a light-emitting diode in which a cuboidal encapsulation 11 made of transparent silicone also serves as a light guide for the emitted light.
Aus der Verkapselung 11 ragen zwei Anschlussbeinchen 13, 15 heraus. Innerhalb einer Reflektorvertiefung 17 des Anschlussbeinchens 13 ist der eigentliche lichtemittierende Diodenchip 19 angeordnet. Dieser ist über einen Bonddraht 21 mit dem anderen Anschlussbeinchen 15 verbunden.Two connecting legs 13, 15 protrude from the encapsulation 11. The actual light-emitting diode chip 19 is arranged within a reflector recess 17 of the connection leg 13. This is connected to the other connection leg 15 via a bonding wire 21.
Die in Fig. 1 gezeigte lichtemittierende Diode dient auf an sich bekannte Weise zur Lichterzeugung. Das von dem Diodenchip 19 emittierte Licht wird von dem Verkapselungsmaterial an eine Außenseite geleitet, insbesondere an die in Fig. 1 nach oben weisende Frontseite. Der Einsatz von elastischem Silikon für die Verkapselung 11. hat den Vorteil, dass die Verkapselung 11 auch bei extremen Temperaturen keine mechanischen Stresseinwirkungen auf den Diodenchip 19 ausübt. Darüber hinaus kann die Verkapselung 11 den Diodenchip 19 auch vor bestimmten, insbesondere stumpfen mechanischen Einwirkungen besser schützen als ein herkömmliches Gehäuse aus Epoxidharz.The light-emitting diode shown in FIG. 1 is used to generate light in a manner known per se. The light emitted by the diode chip 19 is guided by the encapsulation material to an outside, in particular to the front facing upwards in FIG. 1. The use of elastic silicone for the encapsulation 11 has the advantage that the encapsulation 11 does not exert any mechanical stress on the diode chip 19 even at extreme temperatures. In addition, the encapsulation 11 can also protect the diode chip 19 better against certain, in particular blunt, mechanical influences than a conventional housing made of epoxy resin.
Ungeachtet der Ausbildung der Verkapselung 11 aus Silikon kann der Diodenchip 19 innerhalb der Reflektorvertiefung 17 auch punktuell oder flächig mittels eines nicht-elastischen Materials, an dem Anschlussbeinchen 13 befestigt sein. Dies ist jedoch nicht obligatorisch.Regardless of the design of the encapsulation 11 made of silicone, the diode chip 19 can also be attached to the connecting pin 13 within the reflector recess 17 at certain points or over a wide area by means of a non-elastic material. However, this is not mandatory.
Fig. 2 zeigt einen IC-Chip 31 mit beispielsweise acht Anschlussbeinchen 33, von denen in Fig. 2 vier zu sehen sind. Der IC-Chip 31 ist von einer quaderförmigen Verkapselung 35 hermetisch eingehäust, wobei lediglich die Anschlussbeinchen 33 aus der Verkapselung 35 herausragen. Die Verkapselung 35 bildet somit die einzige und äußerste Außenhülle des gezeigten Bauteils, und sie liegt innenseitig direkt an dem IC-Chip 31 an. Da es sich hier um kein Optobauteil handelt, muss die Verkapselung 35 nicht unbedingt transparent ausgebildet sein.FIG. 2 shows an IC chip 31 with, for example, eight connection pins 33, four of which can be seen in FIG. 2. The IC chip 31 is hermetically encased by a cuboid encapsulation 35, with only the connecting legs 33 protruding from the encapsulation 35. The encapsulation 35 thus forms the only and outermost outer shell of the component shown, and it lies on the inside directly against the IC chip 31. Since this is not an optical component, the encapsulation 35 does not necessarily have to be transparent.
Die Verkapselung 35 besteht aus einem elastischen Material, insbesondere aus Silikongummi oder einem sonstigen Elastomer. Dadurch ist gewährleistet, dass die Verkapselung 35 selbst bei extremen Temperaturen keine mechanische Stresseinwirkung auf den IC-Chip 31 aufgrund temperaturbedingter Geometrieveränderungen ausübt. Der IC-Chip 31 ist dadurch auch bei Extremtemperaturen einsetzbar und dabei durch die Verkapselung 35 vor Beschädigungen von außen geschützt. BezugszeichenlisteThe encapsulation 35 consists of an elastic material, in particular of silicone rubber or another elastomer. This ensures that the encapsulation 35 does not exert any mechanical stress on the IC chip 31 due to temperature-related changes in geometry, even at extreme temperatures. As a result, the IC chip 31 can also be used at extreme temperatures and is thereby protected from external damage by the encapsulation 35. LIST OF REFERENCE NUMBERS
Verkapselungencapsulation
Anschlussbeinchenconnecting pins
Anschlussbeinchenconnecting pins
Reflektorvertiefungreflector cavity
Diodenchipdiode chip
Bonddrahtbonding wire
IC-ChipIC chip
Anschlussbeinchenconnecting pins
Verkapselung encapsulation

Claims

Ansprüche Expectations
1. Halbleiterbauteil mit einem Halbleiter-Chip (19, 31) und einer Verkapselung (11, 35) zum Schutz des Chips vor Beschädigungen, dadurch g e k e n n z e i c h n e t , dass die Verkapselung (11, 35) aus einem elastischen Material gefertigt ist.1. Semiconductor component with a semiconductor chip (19, 31) and an encapsulation (11, 35) to protect the chip from damage, due to the fact that the encapsulation (11, 35) is made of an elastic material.
2. Halbleiterbauteil nach Anspruch 1, dadurch g e k e n n z e i c h n e t , dass die Verkapselung (11, 35) aus Silikon gefertigt ist.2. Semiconductor component according to claim 1, characterized in that the encapsulation (11, 35) is made of silicone.
3. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass die Verkapselung (11, 35) aus einem Elastomer gefertigt ist.3. Semiconductor component according to one of the preceding claims, characterized in that the encapsulation (11, 35) is made from an elastomer.
4. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass es sich bei dem Halbleiterbauteil um ein optoelektronisches Halbleiterbauteil, insbesondere um eine lichtemittierende Diode handelt.4. Semiconductor component according to one of the preceding claims, characterized in that the semiconductor component is an optoelectronic semiconductor component, in particular a light-emitting diode.
5. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass die Verkapselung (11) gleichzeitig als Lichtleiter, insbesondere als strahlformender Lichtleiter dient.5. Semiconductor component according to one of the preceding claims, characterized in that the encapsulation (11) simultaneously serves as a light guide, in particular as a beam-shaping light guide.
6. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass das Verkapselungsmaterial (11) transparent ist. 6. Semiconductor component according to one of the preceding claims, characterized in that the encapsulation material (11) is transparent.
7. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass eine erste Stirnseite und die hieran angrenzenden Seitenwände des Chips (19, 31) mit der Verkapselung (11, 35) versehen sind.7. Semiconductor component according to one of the preceding claims, characterized in that a first end face and the adjoining side walls of the chip (19, 31) are provided with the encapsulation (11, 35).
8. Halbleiterbauteil nach Anspruch 7, dadurch g e k e n n z e i c h n e t , dass zusätzlich auch eine zweite, der ersten Stirnseite gegenüberliegende Stirnseite mit der Verkapselung (11, 35) versehen ist.8. The semiconductor component as claimed in claim 7, characterized in that a second end face opposite the first end face is additionally provided with the encapsulation (11, 35).
9. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass es sich bei der Verkapselung (11, 35) um die äußerste Außenhülle und/oder die einzige Außenhülle des Chips (19, 31) handelt.9. Semiconductor component according to one of the preceding claims, characterized in that the encapsulation (11, 35) is the outermost outer shell and / or the only outer shell of the chip (19, 31).
10. Halbleiterbauteil nach einem der vorhergehenden Ansprüche, dadurch g e k e n n z e i c h n e t , dass der Elastizitätsmodul des Verkapselungsmaterials zwischen 1 und 500 N/mm2 beträgt. 10. Semiconductor component according to one of the preceding claims, characterized in that the elastic modulus of the encapsulation material is between 1 and 500 N / mm 2 .
PCT/EP2003/013180 2003-02-24 2003-11-24 Semi-conductor component with an encapsulation made of elastic material WO2004075305A1 (en)

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