WO2004058629A1 - 微小構造体の製造方法、及び型材の製造方法 - Google Patents
微小構造体の製造方法、及び型材の製造方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/602—Nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/875—Scanning probe structure with tip detail
- Y10S977/876—Nanotube tip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/893—Deposition in pores, molding, with subsequent removal of mold
Definitions
- the present invention relates to a method for manufacturing a microstructure and a method for manufacturing a mold material.
- Nanoscale one-dimensional microstructures are being actively researched from the physical limitations of top-down microfabrication technology (wavelength limitations of laser light, etc.) to become key materials for electoral-port devices in the future. It is being developed.
- Typical examples are carbon nanotubes (CNTs) and metal nanowires.However, these materials are difficult to handle due to their size, and due to assembly and integration issues, commercialization is expected to take place after 2010. ing.
- the material grinding technology using a focused ion beam (FIB) for the purpose of thinning the sample and shaving the surface is mainly used for preparing samples for electron microscope measurement.
- FIB focused ion beam
- FIB can be sputtered regardless of its material, it can selectively cut specific small areas (depending on the spot size of the beam), there is no oxidation of the surface, which is a problem with chemical methods, and impurities are mixed. There is no advantage.
- Non-Patent Document 1 Uung Sang Suh, Applied Physics letters 75 2047 (1999) (page 204, left column 3 line 2 to right column 15 line 5)
- Patent Document 1 Japanese Patent Application Laid-Open No. Hei 4-3161132 (column 2, line 24 to line 49, Fig. 1)
- Patent Document 2 Japanese Patent Application Laid-Open No. 2001-107022 (column 4, line 3
- the pores are formed by anodizing, and the diameter of the CNT synthesized using these pores as a template is determined by the pore diameter of the template.
- further miniaturization is as small as about 80 nm. Is desired.
- the wall structure of the CNT synthesized by this method has low crystallinity, and the advantages of the CNT such as the pristine conduction cannot be expected.
- the present invention has been made to solve the above-mentioned problems, and its object is to provide an environment in which impurities can be ignored and on a finer scale. It is an object of the present invention to provide a method for producing a microstructure and a method for producing a mold, which can produce a fine structure having a finer and more crystalline structure. Disclosure of the invention
- the present invention includes a step of irradiating a converged energy beam to a substrate serving as a mold material to form pores, and a step of growing a microstructure in the pores. It relates to a method for producing a body.
- the present invention also relates to a method for manufacturing a mold material, the method including a step of irradiating a focused energy beam to a substrate to be a mold material to form pores.
- a step of irradiating the converged energy beam to the substrate serving as a mold to form the pores there is provided a step of irradiating the converged energy beam to the substrate serving as a mold to form the pores.
- the material of the base can be arbitrarily selected. Further, a chemical pretreatment step and the like can be omitted, and the mold material can be manufactured more easily.
- the above-mentioned pores are formed by irradiating the energy beam and utilizing the directivity of the beam, unlike the chemical grinding method, there is no risk of impurities being mixed in from the electrolyte or the like, and the impurity concentration is low.
- the pores can be formed.
- the high positional resolution of the energy beam device makes it possible to produce the pores at a specific location, so that the pores having an arbitrary arrangement pattern can be easily produced on the substrate. This facilitates the high integration of the microstructure.
- the method includes the steps of: irradiating the converged energy beam to the base material serving as the mold material to form the pores; and growing a microstructure in the pores.
- the wall structure of the microstructure has high crystallinity.
- the method for producing a microstructure and the method for producing a mold material according to the present invention are very effective technologies for, for example, high-quality synthesis and assembly of the microstructure on a nanoscale. And high-density memory devices and other electronic devices.
- FIGS. 1A to 1F are schematic cross-sectional views of an example of a method for manufacturing a microstructure (a method for manufacturing a mold) according to an embodiment of the present invention.
- Fig. 2 is an SEM photograph of a mold produced by the mold production method (microstructure production method).
- Fig. 3A is a SEM photograph (depth: 2 ⁇ ) of another mold material produced by the mold material manufacturing method (microstructure manufacturing method), and Fig. 3 ⁇ is the mold material manufacturing method ( This is an S ⁇ photograph (1 ⁇ m depth) of another mold prepared by the method for manufacturing a microstructure.
- Figure 4A is an SEM photograph (0.5 ⁇ m depth) of another mold material produced by the mold material manufacturing method (microstructure manufacturing method), and Figure 4B is the mold material manufacturing method. It is a SEM photograph (depth 0.5 ⁇ enlarged view) of still another mold material produced by the method (a method for producing a microstructure).
- FIG. 5 is a schematic cross-sectional view of an electron emission source configured using a microstructure obtained by a method for manufacturing a microstructure.
- Fig. 6 shows a device using an electron emission source composed of microstructures. It is an outline perspective view of a spray device.
- FIG. 7 is a schematic diagram of a microstructure obtained by a method for manufacturing a microstructure.
- FIG. 8A is a schematic partially cutaway cross-sectional view of a memory element portion of a magnetic random access memory device configured using a microstructure obtained by a microstructure manufacturing method according to an embodiment of the present invention
- FIG. 8B is a schematic diagram of a single memory cell.
- an ion beam, an electron beam, or a laser beam as the energy beam, and it is particularly preferable to use the ion beam.
- the ion species of the ion beam for example, acceleration voltage, emission current, lens performance, spot size (the diameter of the target pore), irradiation position, and the like are set.
- the finer fine pores whose diameter, depth and pore spacing are controlled on a nanoscale can be more easily formed by giving the substrate a perpendicular orientation. it can.
- the material is limited when the pores are formed by the conventional anodic oxidation.
- the material of the substrate can be arbitrarily selected. Further, a chemical pretreatment step and the like can be omitted, and the mold material can be manufactured more easily.
- the pores are formed by physical processing using the ion beam, unlike the chemical grinding method, there is no risk of impurities being mixed in from an electrolytic solution or the like, and the pores having a low impurity concentration can be formed. It becomes possible. Furthermore, the high positional resolution of the ion beam device makes it possible to produce the pores at specific locations, so that the pores having an arbitrary array pattern can be easily produced on the substrate. This also facilitates high integration of the microstructure.
- the ion beam rather I as long as the cation, for example G a +, S i +, S i ++, B e +, B e ++, A u A u ++ , etc.
- Metal ions or gas ions such as H + and He + .
- the irradiation position of the ion beam it is preferable to control the irradiation position of the ion beam with an error of 5 nm or less in soil.
- it is difficult to make the pore diameter uniform but according to the production method based on the present invention, for example, Can be uniformly formed at an interval of 100 nm and an arbitrary arrangement pattern.
- the pores can be formed with a diameter of 100 nm or less, and more preferably 20 nm or less.
- the pores can be formed to a depth of several ⁇ m.
- the microstructure is grown in a gas phase, a liquid phase, or a solid phase.
- the microstructure one-dimensional microstructures such as carbon nanotubes and metal nanowires are used.
- the structure can be grown.
- the carbon nanotubes when growing the carbon nanotubes as the one-dimensional microstructure, after forming the pores, a catalyst substance is attached to the bottom of the pores, and the catalyst substance is used as the one-dimensional microstructure. It is desirable to grow the above carbon nanotube.
- the focused energy beam such as the ion beam is irradiated to the pores in a catalyst raw material gas atmosphere.
- the catalyst substance is precipitated at the bottom of the pore, and the carbon nanotube as the one-dimensional microstructure is grown from the catalyst substance.
- a metal gas such as iron, nickel, coparte, tungsten, molybdenum, or gold can be used.
- a metal gas such as iron, nickel, coparte, tungsten, molybdenum, or gold
- the converged energy beam such as the ion beam or the like is irradiated on the pores in a catalyst raw material gas atmosphere, whereby the fines minutely formed by the energy beam are formed.
- the catalyst substance can be easily and efficiently precipitated at the bottom of the pore without increasing the diameter of the pore.
- the energy beam such as the ion beam converged on the base material serving as the mold material is irradiated with the energy beam to form the pores, and the catalyst substance is attached to the bottom of the pores. Since the carbon nanotube as the microstructure is grown, it is possible to obtain the carbon nanotube having a highly crystalline wall structure without impurities.
- a base 1 made of, for example, an aluminum piece is fixed with a conductive paste 2.
- the substrate 1 is irradiated with an energy beam 3 such as a Ga + beam.
- an energy beam 3 such as a Ga + beam.
- FIG. 1C it is possible to form a mold member 5 having uniform diameters, intervals and depths and having pores 4 formed in an arbitrary arrangement pattern.
- the product based on the present invention According to the manufacturing method, the pore density can be improved.
- FIGS. 2 to 4A and 4B are SEM photographs of the state in which the energy beam is applied to the substrate to form the pores.
- an energy beam 3a such as an ion beam is irradiated while supplying a catalyst raw material gas 6 such as Ni (CO) 4 gas.
- a catalyst raw material gas 6 such as Ni (CO) 4 gas.
- the catalyst substance 7 composed of, for example, Ni fine particles can be precipitated at the bottom of each pore 4 (FIG. 1E).
- T After the pore 4 is formed as described above, By irradiating the focused ion beam 3 a to the pores 4 in the atmosphere of the catalyst raw material gas 6, the diameter of the pores 4 formed minutely by the ion beam 3 can be increased without increasing the diameter of the pores 4.
- the catalyst substance 7 can be easily and efficiently precipitated at the bottom.
- a microstructure 8 such as a carbon nanotube is grown in the pore 4 from a catalyst material 7 composed of, for example, Ni fine particles by a method such as a thermal decomposition method. It can. That is, it can be obtained in a state where the microstructures 8 such as carbon nanotubes are filled in the pores 4.
- the structure of the obtained carbon nanotubes 8 is determined according to the shape of the pores 4.For example, it is necessary to synthesize a linear multilayer tube with high orientation in the direction perpendicular to the substrate 1. Can be.
- a step of irradiating, for example, the ion beam 3 as the converged energy beam to the base 1 to be the mold member 5 to form the pores 4 is provided. Since the pores 4 are formed by physical processing according to 3, the material of the base 1 can be arbitrarily selected. Further, it is possible to omit the chemical pretreatment step and the like, and it is possible to obtain the mold 5 more easily. .
- the hole 4 can be formed.
- the diameter and length of the pores 4 and the microstructures 8 can be easily controlled.
- the high positional resolution of the ion beam 3 device makes it possible to form the pores 4 at a specific location, so that the pores 4 having an arbitrary arrangement pattern on the substrate 1 can be easily produced. This facilitates the high integration of the microstructure 8.
- the wall structure of the obtained microstructure 8 has high crystallinity.
- the method for producing the microstructure 8 and the method for producing the mold material 5 according to the present invention are very effective techniques for, for example, high-quality synthesis of nanoscale microstructure 8 and its assembly, It can be applied to electrification devices such as emission displays and high-density memory devices.
- the electron emission source 9 has a plurality of strip-shaped cathode electrode lines 11 formed on the surface of a lower substrate 10 made of, for example, a glass material.
- An insulating layer 12 is formed thereon, and a plurality of band gut electrode lines 13 are formed on the insulating layer 12 so as to intersect with the respective cathode electrode lines 11.
- the electrode lines 13 constitute a matrix structure.
- Each of the cathode electrode lines 11 and each of the gate electrode lines 13 are connected to the control means 14 to be driven and controlled.
- the gate electrode line 13 and the insulating layer 12 are penetrated, and further, the force electrode line 11 is formed at an intermediate depth. Up to this point, a large number of substantially circular micropores 15 are formed.
- a microstructure 8 such as a carbon nanotube manufactured as shown in FIG. 1 described above is provided on the bottom surface of the fine hole 15.
- the microstructure 8 may be applied to the electron emission source 9 in a state of being filled in the pores 4.
- a non-conductive material as the material of the base 1, such as alumina.
- the surface of the microstructure 8 is located 100 nm closer to the lower substrate 10 than the surface of the force electrode line 11.
- the fine hole portion 15 a lower than the surface of the cathode electrode line 11 has a side wall removed in the plane direction and the fine hole portion 15 b penetrating the insulating layer 12.
- the diameter of the former is 15% larger than that of the latter.
- the display device using the electron emission source 9 has a lower substrate 10 on which a number of the above-described electron emission sources 9 are arranged so as to form a screen, and a lower substrate 10.
- an upper substrate 28 on the anode side arranged at a predetermined interval in the electron emission direction is provided, and a position parallel to the cathode electrode line 11 is provided at a position facing the electron emission source 9 on the upper substrate 28.
- a phosphor screen 29 coated with a band-shaped phosphor is formed, and a vacuum is maintained between the electron emission source 9 and the phosphor screen 29. The operation of the display device 20 will be described.
- a predetermined force electrode electrode line 11 and a gate electrode line 13 are selected by the control means 14, and a predetermined voltage is applied between them to thereby form a cathode electrode line 11 and a gate electrode line 1. 3, that is, a predetermined electric field is generated between the microstructure (for example, carbon nanotube) 8 in the pixel area and the gate 13 a, and the tunnel is generated from the microstructure 8 in the micropore 15. Electrons are emitted by the effect.
- the control means 14 selects a cathode electrode line 11 and a gate electrode line 13 having an intersection area coinciding with the electron emission source 9. And apply the specified voltage.
- the electron emission source 9 is excited, electrons are emitted from the microstructures 8 in the micropores 15 of the electron emission source 9, and the force source electrode line 11 and the upper substrate 2
- the electrons are accelerated by the voltage applied between the electrodes and collide with the phosphor on the phosphor screen 29 to emit visible light, thereby forming an image.
- the area of the fine holes 15a of the cathode electrode line 11 is larger than the area of the fine holes 15b formed in the gate electrode line 13, the field-emitted electrons efficiently reach the anode, and The short circuit between the gate electrode line 13 and the cathode electrode line 11 does not occur.
- the structure of the electron emission source 9 is simple, a large, ultra-thin display device can be configured.
- the carbon as the microstructure in the pores An example was described in which a tube was filled and used as the electron emission source in the filled state, and applied to a display device.Instead, as shown in FIG. For example, a state in which the carbon nanotubes as the microstructures are filled in the pores may be obtained, and the carbon nanotubes may be taken out from the pores. In this case, the mold having the pores may be removed by a method such as etching. Then, the obtained carbon nanotubes can be used as a p-type semiconductor by oxidizing the obtained carbon nanotubes.
- a magnetic metal is used as the catalyst substance, the carbon nanotube is produced as the microstructure, and the carbon nanotube containing the obtained magnetic metal is included.
- a magnetic random access memory can also be configured using a probe.
- the magnetic metal instead of using the magnetic metal as the catalyst material, the magnetic metal may be precipitated inside the carbon nanotube in a later step after the carbon nanotube is produced.
- the material is limited when the pores are formed by the conventional anodic oxidation.
- the material of the substrate can be arbitrarily selected. In particular, it is more preferable to use a soft material having good thermal conductivity.
- a mask such as a stencil mask may be used.
- a method of attaching the catalyst substance to the bottom of the pore an example in which the focused energy beam such as the ion beam is irradiated to the pore in a catalyst raw material gas atmosphere has been described.
- the catalyst substance is electrochemically deposited on the bottom of the pores. It is also possible.
- the catalyst substance is not particularly required.
- High-purity aluminum sheet (9.99.999%) was cut into 5 mm squares, degreased with acetone, and washed with an ethanol solution.
- the aluminum piece was fixed with a conductive paste and allowed to stand for 3 0 minutes in vacuum ( ⁇ 1 0- 5 P a) .
- a G a + beam with an acceleration voltage of 30 kV and a beam current of 15 pA was focused on a lens so that the set processing range was 10 nm.
- the ion beam used is not limited to gallium, and may be any ion beam that can be a positive ion.
- the irradiation position of the ion beam was controlled with an error of 5 nm on the soil, and pores with a diameter of 10 nm and depth of about 0 nm were placed on an aluminum substrate at intervals of 20 nm. . was made 0 0 8 / xm 3 / s operation. As a result, the pore density could be increased to 1.25 ⁇ 10 11 pores Z cm 2 .
- anodized alumina pores it is about 1.1 ⁇ 10 1 Q pores / cm 2 (Uung Sang Suh, Applied Physics letters 752047 (1999)).
- an ion beam was irradiated for 10 seconds under the same conditions (acceleration voltage, irradiation position) as above while supplying Ni (CO) 4 gas as the catalyst raw material gas into the apparatus. Then, by observing the cross section of this substrate with an electron microscope, it was confirmed that Ni fine particles had precipitated at the bottom of each pore. Ni particles were reduced in a mixed gas of H 2 10% and Ar 90% at 500 ° C. for 1 hour.
- the structure of the carbon nanotubes obtained above is determined according to the pore shape, and a scanning multi-layered tube with a diameter of 10 nm was synthesized with high orientation in the direction perpendicular to the substrate. It was confirmed with a transmission electron microscope.
- High-purity aluminum sheet (99.999%) was cut into 5 mm squares, degreased with acetone, and washed with an ethanol solution.
- the aluminum piece was fixed with a conductive paste and allowed to stand for 3 0 minutes in vacuum ( ⁇ 1 0- 5 P a) .
- a G + beam with an acceleration voltage of 30 kV and a beam current of 15 pA was focused on a lens so that the set processing range was 20 nm.
- the ion beam used is not limited to gallium, and any ion beam can be used as long as it becomes a cation.
- the irradiation position of the ion beam was controlled with an error of ⁇ 5 nm, and pores with a diameter of 20 nm and a depth of 2 ⁇ m were formed on an aluminum substrate at intervals of 100 nm. 0.008 ⁇ m 3 / s was prepared. Thereby, the pore density could be increased to 1.25 X 10 u pores Z cm 2 .
- an AC voltage of 18 V was applied for 1 minute in a Co 4 O 4 ⁇ 7H 2 0 solution to electrochemically precipitate a Co fine particle catalyst on the bottom of the generated pores.
- the Co particles were reduced in a mixed gas of H 2 10% and Ar 90% at 500 ° C. for 1 hour.
- carbon nanotubes were grown by a thermal decomposition method in an Ar carrier gas in which C 2 H 2 10% and H 2 0% were mixed.
- the structure of the carbon nanotube obtained above is determined according to the pore shape, and it is demonstrated that a linear multilayer tube having a diameter of 20 nm was synthesized with high orientation perpendicular to the substrate. It was confirmed with a transmission and transmission electron microscope.
- This embodiment describes an example of a manufacturing method according to the present invention for obtaining the microstructure applicable as a memory device.
- a high-purity aluminum sheet (99.999%) was cut into 5 mm squares, degreased with acetone, and washed with an ethanol solution.
- the aluminum two ⁇ arm piece was fixed with a conductive paste was left standing 3 0 minutes in vacuum ( ⁇ 1 0- 5 P a) .
- FIG. 8A shows a schematic cross-sectional view of the aluminum substrate having the pores.
- the Aruminiumu substrate precipitated C o S 0 4 ⁇ 7 ⁇ 2 0 solution was added an AC voltage of 1 8 V 1 minute.
- the Co catalyst could be electrochemically precipitated on the bottom of the pores of the substrate. Co particles on the surface can be obtained by exposing the substrate to a mixed gas of H 2 10% and Ar 90% at 500 for 1 hour. Therefore, it was reduced.
- the Co catalyst serves as a catalyst layer for producing carbon nanotubes as the microstructure, and also serves as a magnetic layer (fixed layer) of a magnetic memory element.
- C 2 H 2 10% and H 2 0% were supplied while being contained in an Ar carrier gas, and carbon nanotubes were grown in the pores of the substrate by a thermal decomposition method.
- the extra carbon nanotubes are grown together with the substrate in acetone solution.
- the microstructure is a magnetic substance-containing carbon nanotube comprising a Co layer which is a hard magnetic material as a fixed layer, a hollow carbon nanotube as a spin conductive layer, and an Fe layer as a free layer. .
- thinner nanotubes were bonded by an atom manipulation method as electrodes and lead-out wires.
- the carbon nanotubes encapsulated in the magnetic material are put together with the alumina substrate,
- the signal wiring was bonded to the lead wiring, and the address was taken as a two-dimensional grid wiring.
- the insulating substrate was fixed to the Cu heat sink, and a magnetic random access memory device as shown in FIG. 8B was manufactured.
- the confined ion beam is applied to the aluminum substrate as the base, which serves as a mold, to form the pores, so that the pores having a low impurity concentration are formed. It was possible to easily control the diameter and the length of the pores and the carbon nanotube as the microstructure.
- the pores having an arbitrary arrangement pattern can be easily formed on the aluminum substrate, and the high integration of the carbon nanotubes has also been facilitated.
- the method includes the steps of: irradiating the converged energy beam to the base material serving as the mold material to form the pores; and growing a microstructure in the pores.
- the wall structure of the microstructure has high crystallinity.
- the manufacturing method of the present invention is a very effective technique for, for example, high-quality synthesis of carbon nanotubes and assembly thereof, and was applicable to electronic devices such as high-density memory devices.
- a step of irradiating the converged energy beam to the substrate serving as a mold to form the pores In the case of forming pores by extreme oxidation, the material is limited, but the material of the base can be arbitrarily selected. Further, a chemical pretreatment step and the like can be omitted, and the mold material can be obtained more easily. In addition, since the pores are formed by the energy beam, unlike the chemical grinding method, there is no possibility that impurities are mixed in from the electrolytic solution or the like, and the pores having a low impurity concentration can be formed.
- the high positional resolution of the energy beam device makes it possible to produce the pores at a specific location, so that the pores having an arbitrary arrangement pattern can be easily produced on the substrate. This facilitates the high integration of the microstructure.
- the method includes the steps of: irradiating the converged energy beam to the base material serving as the mold material to form the pores; and growing a microstructure in the pores.
- the wall structure of the microstructure has high crystallinity.
- the method for manufacturing a microstructure and the method for manufacturing a mold according to the present invention are very effective techniques for synthesizing and assembling the nanostructure on a nano scale, for example. It can be applied to electronic devices such as high-density memory devices.
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Abstract
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US10/540,637 US7538015B2 (en) | 2002-12-24 | 2003-11-25 | Method of manufacturing micro structure, and method of manufacturing mold material |
AU2003284662A AU2003284662A1 (en) | 2002-12-24 | 2003-11-25 | Method of manufacturing micro structure, and method of manufacturing mold material |
US12/471,643 US8030191B2 (en) | 2002-12-24 | 2009-05-26 | Method of manufacturing micro structure, and method of manufacturing mold material |
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JP2002372277A JP2004202602A (ja) | 2002-12-24 | 2002-12-24 | 微小構造体の製造方法、及び型材の製造方法 |
JP2002-372277 | 2002-12-24 |
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US12/471,643 Continuation US8030191B2 (en) | 2002-12-24 | 2009-05-26 | Method of manufacturing micro structure, and method of manufacturing mold material |
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US (2) | US7538015B2 (ja) |
JP (1) | JP2004202602A (ja) |
KR (1) | KR20050085830A (ja) |
CN (1) | CN1729137A (ja) |
AU (1) | AU2003284662A1 (ja) |
WO (1) | WO2004058629A1 (ja) |
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CN100482579C (zh) * | 2004-10-06 | 2009-04-29 | 清华大学 | 一种碳纳米管阵列处理方法 |
KR101138865B1 (ko) * | 2005-03-09 | 2012-05-14 | 삼성전자주식회사 | 나노 와이어 및 그 제조 방법 |
JP2007049084A (ja) * | 2005-08-12 | 2007-02-22 | Toshiba Corp | スイッチ素子、メモリ素子および磁気抵抗効果素子 |
KR100791790B1 (ko) * | 2006-05-30 | 2008-01-03 | 고려대학교 산학협력단 | 육각형의 나노 판상 다이아몬드 형성방법 |
KR100829159B1 (ko) | 2006-11-03 | 2008-05-13 | 한양대학교 산학협력단 | 나노 와이어 및 반도체 소자 제조 방법 |
CN101827782B (zh) | 2007-09-12 | 2014-12-10 | 斯莫特克有限公司 | 使用纳米结构连接和粘接相邻层 |
CN101868760B (zh) | 2007-11-21 | 2013-01-16 | 分子制模股份有限公司 | 用于纳米刻印光刻的多孔模板及方法、以及刻印层叠物 |
ATE516247T1 (de) * | 2008-02-15 | 2011-07-15 | Imec | Synthese von zeolithkristallen und bildung von kohlenstoffnanostrukturen in gemusterten strukturen |
RU2010138584A (ru) | 2008-02-25 | 2012-04-10 | Смольтек Аб (Se) | Осаждение и селективное удаление электропроводного вспомогательного слоя для обработки наноструктуры |
WO2010118321A2 (en) * | 2009-04-10 | 2010-10-14 | Clean Cell International Inc. | Composite nanorod-based structures for generating electricity |
KR101636907B1 (ko) * | 2009-12-08 | 2016-07-07 | 삼성전자주식회사 | 다공성 나노 구조체 및 그 제조 방법 |
TW201144091A (en) * | 2010-01-29 | 2011-12-16 | Molecular Imprints Inc | Ultra-compliant nanoimprint lithography templates |
JP2012011374A (ja) * | 2010-06-29 | 2012-01-19 | Imec | カーボンナノチューブの成長に適した触媒の形成方法 |
CN103153842B (zh) * | 2010-10-21 | 2015-04-08 | 惠普发展公司,有限责任合伙企业 | 形成带帽纳米柱 |
CN102064063B (zh) * | 2010-12-24 | 2012-08-29 | 清华大学 | 场发射阴极装置及其制备方法 |
KR101349976B1 (ko) * | 2012-07-13 | 2014-01-16 | 재단법인 멀티스케일 에너지시스템 연구단 | 나노입자로 조립된 3차원 구조물을 이용한 광학소자 |
US10163810B2 (en) * | 2015-12-26 | 2018-12-25 | Intel Corporation | Electromagnetic interference shielding for system-in-package technology |
TWI787448B (zh) | 2018-02-01 | 2022-12-21 | 德商漢高股份有限及兩合公司 | 用於屏蔽系統級封裝組件免受電磁干擾的方法 |
WO2023008202A1 (ja) * | 2021-07-28 | 2023-02-02 | 東京エレクトロン株式会社 | 基板処理方法 |
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- 2003-11-25 US US10/540,637 patent/US7538015B2/en not_active Expired - Fee Related
- 2003-11-25 CN CNA2003801070406A patent/CN1729137A/zh active Pending
- 2003-11-25 WO PCT/JP2003/014978 patent/WO2004058629A1/ja active Application Filing
- 2003-11-25 AU AU2003284662A patent/AU2003284662A1/en not_active Abandoned
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Also Published As
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US8030191B2 (en) | 2011-10-04 |
KR20050085830A (ko) | 2005-08-29 |
US20100021650A1 (en) | 2010-01-28 |
AU2003284662A1 (en) | 2004-07-22 |
JP2004202602A (ja) | 2004-07-22 |
US7538015B2 (en) | 2009-05-26 |
US20060148370A1 (en) | 2006-07-06 |
CN1729137A (zh) | 2006-02-01 |
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