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WO2004049398B1 - Porogen material - Google Patents

Porogen material

Info

Publication number
WO2004049398B1
WO2004049398B1 PCT/US2003/037171 US0337171W WO2004049398B1 WO 2004049398 B1 WO2004049398 B1 WO 2004049398B1 US 0337171 W US0337171 W US 0337171W WO 2004049398 B1 WO2004049398 B1 WO 2004049398B1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
porogen
porous
film
material
silicon
Prior art date
Application number
PCT/US2003/037171
Other languages
French (fr)
Other versions
WO2004049398A2 (en )
WO2004049398A3 (en )
Inventor
Chongying Xu
Alexander S Borovik
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2984Microcapsule with fluid core [includes liposome]
    • Y10T428/2985Solid-walled microcapsule from synthetic polymer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • Y10T428/2998Coated including synthetic resin or polymer

Abstract

A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Claims

AMENDED CLAIMS [ Received by the International Bureau on 16 May 2005 (16.05.2005): original claims 1 to 18 replaced by amended claims 1 to 18 ]I Claim:
1. A porogen material comprising: a silicon containing porogen; and a silicon based dielectric precursor.
2. The porogen material of claim 1 wherein the silicon containing porogen is a carboxylate including a side chain selected from a group consiting of an alkyl, a fluoroalkyl, a perfluroalkyl, a cycloalkyl, an aryl, a fluraryl, a vinyl, and an allyl.
3. The porogen material of claim 1 wherein the silicon based dielectric precursor is a cyclic siloxane selected from a group consisting of tetramethylcyclotetrasiloxane, hexamethyl cyclotetrasiloxane, and octamethylcyclotetrasiloxane.
4. The porogen material of claim 1 wherein the silicon containing porogen includes a thermally cleavable organic group.
5. The porogen material of claim 4 wherein the thermally cleavable organic group is to be removed to transform the porogen material into a porous film having a substantially uniform dielectric constant value throughtout.
6. The porogen material of claim 4 wherein the thermally cleavable organic group is one of a tertiary butyl group and tertiary atnyl group.
7. A semiconductor wafer having a first circuit feature isolated by a porous film at a first location and a second circuit feature isolated by the porous film at a second location, the porous film having substantially equivalent dielectric constant values at the first and second locations.
8. The semiconductor wafer of claim 7 wherein the porous film is formed from a porogen material having a silicon containing porogen and a silicon based dielectric precursor. 10
9. A die for an integrated circuit, said die comprising: a semiconductor substrate; and a porous film above said semiconductor substrate, said porous film having a substantially uniform dielectric constant value throughout.
10. The die of claim 8 wherein said porous film is formed from a porogen material having a silicon containing porogen and a silicon based dielectric precursor.
11. A method comprising delivering the silicon based dielectric precursor and a the silicon containing porogen to a semiconductor substrate to form the porogen material of claim 1 thereabove.
12. The method of claim 11 wherein the silicon based dielectric precursor is a cyclic siloxane.
13. The method of claim 11 wherein the silicon containing porogen is carboxylate.
14. The method of claim 11 further comprising activating the porogen material to form a porous film having a substantially uniform porosity.
15. The method of claim 14 wherein said activating includes heating the porogen material to between about 100° and about 450°C,
16. A method comprising isolating circuit features with a porous film above a semiconductor substrate, wherein the porous film is formed from the porogen material of claim 1.
17. The method of claim 16 wherein said circuit features are metal lines and said isolating comprises: patterning a photo resist above the porous film; etching trenches into the porous film; removing the photo resist; 11 metalizingto fill the trenches with a metal; and planarizing away excess metal above the trenches leaving metal lines therein.
18. The method of claim 17 wherein the metal is one of copper and aluminum.
PCT/US2003/037171 2002-11-21 2003-11-19 Porogen material WO2004049398B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/301,109 2002-11-21
US10301109 US7456488B2 (en) 2002-11-21 2002-11-21 Porogen material

Publications (3)

Publication Number Publication Date
WO2004049398A2 true WO2004049398A2 (en) 2004-06-10
WO2004049398A3 true WO2004049398A3 (en) 2005-06-09
WO2004049398B1 true true WO2004049398B1 (en) 2005-07-14

Family

ID=32324473

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/037171 WO2004049398B1 (en) 2002-11-21 2003-11-19 Porogen material

Country Status (2)

Country Link
US (2) US7456488B2 (en)
WO (1) WO2004049398B1 (en)

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Also Published As

Publication number Publication date Type
WO2004049398A2 (en) 2004-06-10 application
US20040102006A1 (en) 2004-05-27 application
US20050161763A1 (en) 2005-07-28 application
US7456488B2 (en) 2008-11-25 grant
WO2004049398A3 (en) 2005-06-09 application
US7342295B2 (en) 2008-03-11 grant

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