WO2004019381A2 - Barrier coatings produced by atmospheric glow discharge - Google Patents
Barrier coatings produced by atmospheric glow discharge Download PDFInfo
- Publication number
- WO2004019381A2 WO2004019381A2 PCT/US2003/026363 US0326363W WO2004019381A2 WO 2004019381 A2 WO2004019381 A2 WO 2004019381A2 US 0326363 W US0326363 W US 0326363W WO 2004019381 A2 WO2004019381 A2 WO 2004019381A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- precursor
- plasma
- manufactured according
- coated substrate
- atmospheric pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2441—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes characterised by the physical-chemical properties of the dielectric, e.g. porous dielectric
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
Definitions
- This invention relates generally to barrier films; in particular, the invention relates to films and coatings with improved barrier characteristics produced by combining vapor deposition and steady-state glow-discharge plasma at atmospheric pressure and low temperatures.
- Glow-discharge plasma treatment is an effective method of treating surfaces to increase their wettability and adhesion to various materials.
- Glow discharge provides a uniform and homogenous plasma that produces a consistent surface treatment with high-energy electrons that collide with, dissociate and ionize low-temperature neutrals, thereby creating highly reactive free radicals and ions.
- These reactive species enable many chemical processes to occur with otherwise unreactive low- temperature feed stock and substrates. Based on these properties, low-density glow-discharge plasmas are usually utilized for low material-throughput processes involving surface modification.
- These plasmas are typically formed by partially ionizing a gas at a pressure well below atmosphere. For the most part, these plasmas are weakly ionized, with an ionization fraction of 10 "5 to 10" 1 , established with AC or DC power in systems with varied geometries. These systems require vacuum chambers and pumps to maintain a low pressure, which increases operating and maintenance costs. Accordingly, there has been an extensive effort to develop plasma systems capable of operating at atmospheric pressure for surface treatment of polymer films, foils, and paper.
- atmospheric plasma can be generated at relatively low temperatures with a proper power source, the insertion of a dielectric layer between the electrodes, and the use of an appropriate gas mixture as plasma medium.
- atmospheric plasma can be established between two electrodes using an inert gas such as helium under particular operating conditions.
- an inert gas such as helium under particular operating conditions.
- one electrode is attached to a high voltage power supply, and a rotating drum is grounded and acts as the other electrode.
- One electrode is coated with a ceramic layer and the plasma gas is injected between electrodes. Examples of such glow-discharge plasma systems operating at atmospheric pressure are described in U.S. Patent Nos. 5,387,842, 5,403,453, 5,414,324, 5,456,972, 5,558,843, 5,669,583, 5,714,308, 5,767,469, and 5,789,145.
- the invention consists of incorporating a porous metallic layer in one of the electrodes of a conventional plasma treatment system.
- a plasma gas is injected into the electrode at substantially atmospheric pressure and allowed to diffuse through the porous layer, thereby forming a uniform glow-discharge plasma.
- the material to be treated is exposed to the plasma created between this electrode and a second electrode covered by a dielectric layer.
- each pore Because of the micron size of the pores of the porous metal, each pore also produces a hollow cathode effect that facilitates the ionization of the plasma gas. As a result, a steady-state glow-discharge plasma is produced at atmospheric pressure and at power frequencies as low as 60 Hz. In order for the electrode holes to operate effectively for producing an optimal glow discharge, their size must approach the mean free path of the plasma gas at the system's operating pressure.
- the porous metallic layer of U.S. Patent No. 6,118,218 may be used in conjunction with novel electrode arrangements to overcome the substrate-thickness limitations imposed by conventional plasma-treatment apparatus.
- the invention consists of two metallic electrodes embedded side by side in a dielectric medium having an outer layer defining an exposed treatment space.
- One of the electrodes is made of a porous metal and serves as a conduit for introducing the plasma gas into the treatment space at substantially atmospheric pressure.
- the two electrodes are energized in conventional manner, using one of the electrodes as a ground, to create an electric field between them and produce a uniform glow- discharge plasma in the treatment space.
- the material to be treated can be exposed to the plasma so created without substantial limitation as to thickness, geometry and composition.
- the electrode assembly of the invention makes it possible to treat thick substrates and substrates of metallic composition that could not be treated with prior- art equipment.
- a powdery substrate can be treated by adding a shaker to a belt used to convey the substrate through the plasma field.
- vapor deposition is carried out in combination with plasma treatment by vaporizing a substance of interest, mixing it with the plasma gas, and diffusing the mixture through the porous electrode.
- a heater is provided to maintain, if necessary, the temperature of the electrode above the condensation temperature of the substance in order to prevent deposition during diffusion.
- plasma treatment and vapor deposition are carried out on a target substrate at the same time at atmospheric pressure.
- the present invention is a further refinement of the combination of vapor deposition and plasma treatment at atmospheric pressure using certain classes of evaporable liquid and solid materials to produce films and coatings with improved barrier properties.
- many useful gases i.e., vapors at ambient conditions
- vaporizable constituents are known from the prior art that can also be used advantageously in the atmospheric-pressure process of the invention (such materials are typically referred to as "precursors" in the art) .
- the primary objective of this invention is the manufacture of films with improved properties by combining plasma treatment and vapor deposition of judiciously selected gases or vaporizable materials (either liquid or solid) at atmospheric pressure.
- the invention is directed at the atmospheric-pressure manufacture of films and sheets (coating layers, in general) with improved barrier properties to moisture and oxygen for use in packaging, displays and electronic applications.
- Another goal is the atmospheric-pressure manufacture of materials with improved hardness and resistance to scratch and abrasion for protective-coating applications.
- Another objective is the atmospheric-pressure production of coatings with improved chemical resistance for use as structural materials and for protective-coating applications.
- Still another objective is the atmospheric-pressure manufacture of low-friction coatings for tools and machine parts .
- Another goal is the atmospheric-pressure production of coatings with hydrophobic and/or oleophobic properties for use in filters, membranes, electrets, and textile applications .
- Another object is the atmospheric-pressure production of coatings with hydrophilic properties for use in filters, membranes, and textile applications.
- Another objective is the atmospheric-pressure production of coatings with biocidal and antibacterial properties for use in chemical and biological protective materials .
- the invention consists of producing a plasma in a treatment space by passing a plasma gas through a porous layer and subjecting it to an electric field produced by two metallic electrodes separated by a dielectric material, by mixing a vapor substance with the plasma, and by coating a substrate material by vapor deposition of the vaporized substance at atmospheric pressure in the plasma field.
- the two electrodes are positioned side by side, separated by the dielectric material, and face the treatment space alongside both electrodes.
- the two electrodes are positioned opposite to each other and face the treatment space and the dielectric material placed between them.
- various precursors may be injected in vapor form into the plasma space for atmospheric-pressure deposition according to the invention.
- the use of silicon-based materials, fluorine-based materials, chlorine-based materials, and organo-metallic complex materials enable the manufacture of coated substrates with improved properties with regard to moisture-barrier, oxygen-barrier, hardness, scratch- and abrasion-resistance, chemical-resistance, low- friction, hydrophobic and/or oleophobic, hydrophilic, chemical-resistance, biocide/antibacterial, and electrostatic-dissipative/conductive characteristics.
- the materials in vapor form were processed successfully in the deposition chamber at atmospheric pressure both by mixing and injecting them with the plasma gas (helium) stream and by injecting them separately (via a nozzle) in the vicinity of the plasma gas.
- Fig. 1 is a schematic representation of a conventional plasma-treater configuration.
- Fig. 2 is a partially cut-out, side sectional view ' of an electrode containing a porous-metal component according to the invention.
- Fig. 3 is a schematic representation of an electrode assembly according to the invention wherein a porous-metal structure is used as an electrode as well as a perfusion medium in side-by-side combination with a conventional electrode encased in a dielectric medium.
- Fig. 4 is a schematic view of an evaporator used to practice the combined vapor-deposition and plasma- treatment processes of the invention at atmospheric pressure.
- Fig. 5 is a schematic view of the plasma treater configuration of Fig. 1 incorporating the evaporator of Fig. 4 for atmospheric treatment according to the invention by mixing plasma gas and coating precursor prior to injection through the electrode.
- Fig. 6 is a schematic view of the plasma treater configuration of Fig. 5, wherein the coating precursor is injected directly over substrate prior to plasma treatment.
- Fig. 1 shows a general layout of an atmospheric plasma treater assembly according to the invention, wherein a plasma treater 10 is shown mounted opposite to the roller 12 of a conventional web-treatment system.
- a web or film 14 of material to be treated is passed through the assembly between the plasma treater and the roller at speeds typically ranging from 1 to 200 ft/min.
- the roller 12 is grounded and coated with a dielectric material 16, such as polyethylene teraphthalate (PET) .
- PET polyethylene teraphthalate
- the plasma treater 10 contains at least one electrode as described in U.S. Patent No. 6,118,218, such as illustrated schematically in Fig. 2, which is connected, through a cable 18, to an AC power supply 20 operating at any frequency between 60 Hz and the maximum frequency available from the power supply.
- the treater 10 is held in place conventionally by a holding bracket 22 to maintain a distance of 1-2 mm between the dielectric layer 16 and the treater 10.
- Plasma gas such as helium, argon, and mixtures of an inert gas with nitrogen, oxygen, air, carbon dioxide, methane, acetylene,' propane, ammonia, or mixtures thereof, can be used with this treater to sustain a uniform and steady plasma at atmospheric pressure.
- the gas is supplied to the treater 10 through a manifold 24 that feeds the porous electrode of the invention.
- an embodiment of a porous electrode 30 incorporated within the treater 10 consists of a hollow housing 32 with a porous metal layer 34 having pores sized to approximate the mean free path of the plasma gas intended to be used in the treater.
- the gas is fed to the upper portion 36 of the hollow electrode 30 at substantially atmospheric pressure through an inlet pipe 38 connected to the exterior manifold 24.
- the electrode is energized by an electrical wire 40 connected to the power system through the exterior cable 18.
- the electrode 30 preferably includes a distribution baffle 42 containing multiple, uniformly spaced apertures 44 designed to distribute the gas uniformly throughout the length of the bottom portion 46 of the hollow electrode 30.
- any one of several side-by-side embodiments of a porous electrode can be used to practice the invention, as disclosed in U.S. Serial No. 09/660,003 and exemplified herein in Fig. 3.
- Such an electrode unit 50 may consist, for example, of a pair of electrodes encased in a dielectric housing 52, such as a ceramic structure.
- a first, conventional electrode 54 is coupled to a porous electrode 56 made of the same type of porous material described in U.S. Patent No. 6,118,218.
- the two electrodes are placed side by side facing the process space 58 where a target substrate is intended to be treated.
- the electrode assembly 50 is energized by an AC power source 20 and grounded through a ground 60 in conventional manner using either electrode as the ground.
- An inlet port 62 is connected to the porous electrode 56 to feed the plasma gas to the unit 50 through the porous metal constituting the electrode.
- the dielectric housing 52 between the porous electrode 56 and the boundary of the process space 58 may also include a dielectric layer 64 that consists of a porous portion capable of diffusing plasma gas received from the porous electrode into the process space.
- the porous dielectric layer 64 may be used with a hollow electrode 56 (instead of a porous electrode 56) for diffusing the plasma gas into the process space 58.
- the treater assembly of Fig. 1 is preferably coupled to an evaporator 80, such as illustrated separately in Fig. 4, in order to provide the capability of evaporating liquid and solid precursors.
- the coating precursor to be deposited by vapor deposition on a given substrate is fed to the evaporator 80 through an inlet port 82 and is heated to its evaporation temperature by heating bands 84 at the bottom of the evaporator. If a gaseous precursor is being used, it passes through the unit without effect (or it may be passed through a bypass channel and injected directly into the plasma area) . If a solid precursor is being used, it is liquefied prior to feeding it to the evaporator 80.
- Plasma gas is also supplied to the evaporator through a separate port 86 and is mixed with the gas or vaporized material prior to being fed to the electrode (30, 50 or equivalent porous electrode) through an outlet duct 88.
- Fig. 5 shows the combination of the evaporator 80 with a plasma-treatment unit of the type illustrated in Fig. 1, wherein the flow rate of the precursor/plasma-gas mixture to the electrode is controlled by a flowmeter 90 and the flow rates of the precursor and plasma gas into the evaporator 80 are regulated by additional appropriate flowmeters 92 and 94, respectively.
- a heater element 96 may also be used around the porous electrode to maintain the vaporized state of any liquid or solid precursor used in the process while the gas/vapor mixture is diffused through the porous electrode 56 (or equivalent electrode) .
- the heater 96 must be capable of maintaining the electrode temperature uniformly above the vaporization temperature of the deposition material at atmospheric pressure. A temperature range from 70°C to
- the evaporator 80 is used only to evaporate the precursor material, if necessary, separately from the plasma gas.
- the evaporated material is then injected directly in the vicinity of the plasma field, as illustrated in Fig. 6, prior to passing the substrate through the process space between the plasma treater 10 and the drum 12.
- the precursor vapor is injected through a slitted nozzle 98 placed across the drum 12, such that the vapor is directed for deposition toward the substrate 14 under the influence of the plasma field created by the treater 10.
- the plasma gas is injected separately through the porous electrode in the treater 10 to provide the plasma field in the process space.
- Organic substrates such as polypropylene, polyethylene, and polyethylene teraphthalate, as well as metal objects, of various thickness were coated according to the invention using various materials with desirable properties for specific objectives.
- polyester substrates were coated by vapor deposition in a helium plasma at atmospheric pressure using vaporized silicon-based materials (e.g., siloxanes, alkyl silanes, silazanes, and silsesquioxanes) mixed with the plasma-gas stream and diffused into the treatment area.
- vaporized silicon-based materials e.g., siloxanes, alkyl silanes, silazanes, and silsesquioxanes
- the resulting products exhibited improved surface properties with regard to moisture- and oxygen-barrier characteristics, hardness, scratch and abrasion resistance, chemical resistance, and low friction.
- fluorine-based precursors e.g., fluorocarbons, fluoro-silicones
- Chlorine-based precursors e.g., chloro-carbons, chloro-silicones
- organo-metallic complex precursors e.g., silver, copper, boron or aluminum complex
- All tests reported below are representative of a range of tests carried out with the same materials using a helium plasma gas and a vapor precursor in proportions varying from 10 to 98% by volume plasma gas (about 90% plasma gas being preferred, the balance being vapor precursor) .
- the plasma gas and the vapor precursor were fed to the treater (together or separately, as described above) at a combined rate varying from about 200 to about 500 seem (standard cubic centimeters per minute) .
- the electrode assembly operated with a porous component with average pore size in the range of 1-20 microns.
- the substrate material to be treated was passed through the treatment space of a 12- inch plasma treater facing a conventional rotating drum. Some other tests were carried out by placing a target object to be treated in an open space facing the type of electrode illustrated in Fig. 3. Although it has been previously demonstrated that the process can be carried out at frequencies as low as 60 Hz, these tests were conducted at frequencies ranging from about 20 KHz to about 13.5 MHz.
- Tow examples are listed for each precursor tested. One example refers to a specific case, while the other reports the range of conditions tested for the same precursor and the corresponding range of results observed.
- Example 1 Plasma gas: helium fed at 400 seem
- Substrate material polyester film
- Precursor liquid hexamethyl disiloxane
- Evaporator temperature 75 °C
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 0.1 cc/m 2 /day hardness: 3H on pencil-test scale
- chemical resistance resists organic solvents friction: coefficient of less than 0.5
- Substrate material polyester film
- AC-voltage frequency 20 KHz to 13.5 MHz
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 0.1 cc/m 2 /day hardness: 3H-4H on pencil-test scale
- chemical resistance resists organic solvents friction: coefficient of less than 0.5
- Example 2 Plasma gas: helium fed at 400 seem
- Substrate material polyester film
- Precursor gaseous trimethyl silane Evaporator temperature: n/a (25 °C)
- moisture-barrier permeability less than 0.01 gm/m 2 /day
- oxygen-barrier permeability less than 0.01 cc/m 2 /day hardness: 5H on pencil-test scale
- chemical resistance resists acids, bases, organic solvents friction: coefficient of less than 0.5 hydrophobic: contact angle with water greater than 80°
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Mixing step mixed with plasma gas prior to injection
- Feed rate of precursor 20-80 seem
- AC-voltage frequency 20 KHz to 13.5 MHz
- moisture-barrier permeability less than 0.01 gm/m 2 /day
- oxygen-barrier permeability less than 0.01 cc/m 2 /day hardness: 3H-5H on pencil-test scale
- chemical resistance resists acids, bases, organic solvents friction: coefficient of less than 0.5 hydrophobic: contact angle with water ⁇ 70° to ⁇ 100°
- Plasma gas helium fed at 400 seem
- Substrate material copper foil
- Mixing step mixed with plasma gas prior to injection
- Feed rate of precursor 30 seem AC-voltage frequency: 13.5 MHz
- Plasma gas helium fed at 300-1000 seem
- Substrate material copper foil
- Precursor trialkyl silanes (may be gaseous or liquid)
- Evaporator temperature 25-50 °C
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Evaporator temperature 75 °C Mixing step: injected separately into plasma gas
- Feed rate of vaporized precursor 40 seem
- AC-voltage frequency 40 KHz
- moisture-barrier permeability less than 1 gm/m 2 /day
- oxygen-barrier permeability less than 10 cc/m 2 /day chemical resistance: not as good as Example 1 - 24-hour exposure to polar organic solvents deteriorated the coating friction: coefficient of less than 0.5
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Feed rate of vaporized precursor 20-100 seem
- AC-voltage frequency 20 KHz to 13.5 MHz
- moisture-barrier permeability less than 1 gm/m 2 /day
- oxygen-barrier permeability less than 10 cc/m 2 /day chemical resistance: same as in Example 5 above friction: coefficient of less than 0.5
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Evaporator temperature n/a (25 °C) Mixing step: injected separately into plasma field Feed rate of precursor: 30 seem AC-voltage frequency: 13.5 MHz Drum Speed: 18 ft/min
- moisture-barrier permeability less than 0.01 gm/m 2 /day
- oxygen-barrier permeability less than 0.01 cc/m 2 /day hardness: 5H on pencil-test scale
- chemical resistance resists acids, bases, organic solvents friction: coefficient of less than 0.5 hydrophobic: contact angle with water greater than 80°
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Precursor trialkyl silanes (may be gaseous or liquid)
- Feed rate of precursor 20-80 seem
- AC-voltage frequency 20 KHz to 13.5 MHz
- Drum Speed 5-100 ft/min
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 0.1 cc/m 2 /day hardness: 3H-5H on pencil-test scale
- chemical resistance resists acids, bases, organic solvents friction: coefficient of less than 0.5 hydrophobic: contact angle with water ⁇ 70° to ⁇ 100°
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Precursor perfluoroisobutylene
- Evaporator temperature 60 °C
- moisture-barrier permeability less than 1 gm/m 2 /day oxygen-barrier: permeability less than 10 cc/m 2 /day hardness: 3H on pencil-test scale
- chemical resistance resists acid, bases, organic solvents friction: coefficient of less than 0.3
- hydrophobic contact angle with water greater than 100°
- oleophobic contact angle with mineral oil greater than 75°
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Evaporator temperature 60-100 °C Mixing step: mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20-100 seem
- AC-voltage frequency 20KHz to 13.5 MHz
- moisture-barrier permeability less than 1 gm/m 2 /day
- oxygen-barrier permeability less than 10 cc/m 2 /day
- chemical resistance resists acid, bases, and organic solvents friction: coefficient of less than 0.3
- hydrophobic contact angle with water greater than 100° oleophobic: contact angle with mineral oil greater than 75 c
- Plasma gas helium fed at 400 seem
- Substrate material cotton fabric
- Precursor perfluoroisobutylene
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 60 seem
- Plasma gas helium fed at 300-1000 seem
- Substrate material cotton fabric
- Precursor liquid fluorocarbons
- Evaporator temperature 60-100 °C Mixing step: mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20-100 seem
- AC-voltage frequency 20KHz to 13.5 MHz
- Drum Speed 5-100 ft/min
- Tests were performed under the same conditions of Examples 7, 7A, 8 and 8A with fluorocarbon precursors on polyester- film and cotton-fabric substrates, but by injecting the precursor separately into the plasma field instead of first mixing it with the plasma gas. Similar conditions produced similar results as reported above for those examples .
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Feed rate of vaporized precursor 60 seem
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 1 cc/m 2 /day
- chemical resistance resists acid, bases, organic solvents friction: coefficient of less than 0.2 hydrophobic: contact angle with water greater than 105°
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Evaporator temperature 60-100 °C Mixing step: injected separately into plasma field
- Feed rate of vaporized precursor 20-100 seem
- AC-voltage frequency 20KHz to 13.5 MHz
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 1 cc/m 2 /day
- chemical resistance resists acid, bases, and organic solvents friction: coefficient of less than 0.2 hydrophobic: contact angle with water greater than 105°
- Plasma gas helium fed at 400 seem
- Substrate material cotton fabric
- Precursor carbon tetrachloride
- Evaporator temperature 70 °C
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 60 seem
- AC-voltage frequency 13.5 MHz
- Drum Speed 18 ft/min
- biocide/antibacterial molds did not grow on coated fabric while they grew on uncoated fabric under same conditions
- Plasma gas helium fed at 300-1000 seem
- Substrate material cotton fabric
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20-100 seem AC-voltage frequency: 20KHz to 13.5 MHz
- the resulting coated product exhibited the following properties: biocide/antibacterial: molds did not grow on coated fabric while they grew on uncoated fabric under same conditions
- Plasma gas helium fed at 400 seem
- Substrate material glass plate
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20 seem AC-voltage frequency: 13.5 MHz
- the resulting coated product exhibited the following properties: electrostatic-dissipative/conductive: surface resistance of 2 Kilo-ohm/square - surface became semi-reflective
- Plasma gas helium fed at 300-1000 seem
- Substrate material glass plate
- Precursor organo-silver complexes
- Evaporator temperature 120-200 °C
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20-100 seem
- AC-voltage frequency 20KHz to 13.5 MHz
- Drum Speed 5-100 ft/min
- electrostatic-dissipative/conductive surface resistance of 2 Kilo-ohm/square - surface became semi-reflective
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Precursor copper (II) trifluoroacetylacetonate
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20 seem
- the resulting coated product exhibited the following properties: moisture-barrier: slight improvement biocide/antibacterial: molds did not grow on coated fabric while they grew on uncoated fabric under same conditions
- electrostatic-dissipative/conductive surface resistance of 7 Kilo-ohm/square
- Substrate material polyester film
- AC-voltage frequency 20KHz to 13.5 MHz
- moisture-barrier slight improvement biocide/antibacterial: molds did not grow on coated fabric while they grew on uncoated fabric under same conditions electrostatic-dissipative/conductive: surface resistance of 7 Kilo-ohm/square
- Plasma gas helium fed at 400 seem
- Substrate material polyester film
- Evaporator temperature 150 °C Mixing step: mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20 seem
- AC-voltage frequency 13.5 MHz
- Drum Speed 18 ft/min
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 1 cc/m 2 /day
- electrostatic-dissipative/conductive surface resistance of 500 Ohm/square
- Plasma gas helium fed at 300-1000 seem
- Substrate material polyester film
- Mixing step mixed with plasma gas prior to injection
- Feed rate of vaporized precursor 20-100 seem AC-voltage frequency: 20KHz to 13.5 MHz
- moisture-barrier permeability less than 0.1 gm/m 2 /day
- oxygen-barrier permeability less than 1 cc/m 2 /day
- electrostatic-dissipative/conductive surface resistance of 500 Ohm/square
- Unsaturated alcohols and esters thereof allyl, ethallyl, 1-choroallyl, 2-chloroallyl, vinyl, methylvinyl, 1-phenalallyl, and butenyl alcohols; and esters of such alcohols with saturated acids such as acetic, propionic, and butyric; with unsaturated acids such as acrylic, -substituted acrylic (including alkylacrylic, such as methacrylic, ethylacrylic, propylacrylic, etc.; and arylacrylic, such as phenylacrylic) , crotonic, oleic, linoeic and linolenic; and with polybasic acids, such as oxalic, and malonic.
- Unsaturated alcohols and esters thereof allyl, ethallyl, 1-choroallyl, 2-chloroallyl, vinyl, methylvinyl, 1-phenalallyl, and butenyl alcohols
- Unsaturated acids (as listed above for example); and esters thereof with lower saturated alcohols, such as methyl, ethyl propyl, isopropyl, butyl, isobutyl, sec- butyl, tert-butyl, 2-ethylhexyl, and cyclohexyl alcohols; and with saturated lower polyhydric alcohols, such as ethylene glycol, propylene glycol, tetramethylene glycol, neopentyl glycol, and trimethylopropane.
- saturated alcohols such as methyl, ethyl propyl, isopropyl, butyl, isobutyl, sec- butyl, tert-butyl, 2-ethylhexyl, and cyclohexyl alcohols
- saturated lower polyhydric alcohols such as ethylene glycol, propylene glycol, tetramethylene glycol, neopentyl glycol, and trimethylopropan
- Unsaturated lower polyhydric alcohols such as butenediol; and esters thereof with saturated and unsaturated aliphatic and aromatic, monobasic and polybasic acids, such as illustrated above.
- esters of the above-described unsaturated acids especially acrylic and methacrylic acids, with higher molecular-weight monohydroxy and polyhydroxy materials, such as decyl alcohol, isodecyl alcohol, oleyl alcohol, and stearyl alcohol. 5.
- Vinyl cyclic compounds including styrene, o-, m-, p-chlorostyrenes, bromostyrenes, fluorostyrens, methylstyrenes, ethylstyrenes, cyanostyrenes; di-, tri-, and tetrachlorostyrenes, bromostyrenes, fluorostyrenes, methylstyrenes, ethylstyrenes, cyanostyrenes, vinylnaphthalene, vinylcyclohexane, divinylbenzene, trivinylbenzene; allybenzene, and heterocycles such as vinylfuran, vinnylpridine, vinylbenzofuran, N- vinylcarbazole, N-vinylpyrrolidone, and N- vinyloxazolidone.
- Unsaturated ethers such as methyl vinyl ether, ethyl vinyl ether, cyclohexyl vinyl ether, octyl vinyl ether, diallyl ether, ethyl methallyl ether, and allyl ethyl ether.
- Unsaturated ketones such as methyl vinyl ketone and ethyl vinyl ketone.
- Unsaturated amides such as acrylamide, methacrylamide, N-methylacrylamide, N-phenylolacrylamide, N-allylacrylamide, N-methylolacrylamide, N- allylcaprolactam, diacetone acrylamide, and 2-acrylamido- 2-methylpropanesulfonic acid.
- Unsaturated aliphatic hydrocarbons such as ethylene, acetylene, propylene, butanes, butadiene, isoprene, and 2-chlorobutadiene.
- Unsaturated alky halides such as vinyl fluoride, vinyl chloride, vinyl bromide, nylidene bromide, allyl chloride, and ally bromide.
- Unsaturated acid anhydrides such as maleic, citraconic, itaconic, cis-4-cyclohexene-l, 2-dicarboxylic, and bicyclo (2.2.1) -5-heptene-2, 3-dicarboxylic anhydrides.
- Unsaturated acid halides such as cinnamyl acrykyl, methacrylyl, crontonyl, oleyl, and fumaryl chlorides or bromides.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03793301A EP1540714A4 (en) | 2002-08-26 | 2003-08-22 | Barrier coatings produced by atmospheric glow discharge |
| JP2004529864A JP2005536635A (en) | 2002-08-26 | 2003-08-22 | Barrier coating produced by atmospheric pressure glow discharge |
| AU2003260000A AU2003260000A1 (en) | 2002-08-26 | 2003-08-22 | Barrier coatings produced by atmospheric glow discharge |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/241,882 US6118218A (en) | 1999-02-01 | 1999-02-01 | Steady-state glow-discharge plasma at atmospheric pressure |
| US09/660,003 US6441553B1 (en) | 1999-02-01 | 2000-09-12 | Electrode for glow-discharge atmospheric-pressure plasma treatment |
| US10/228,358 US6774018B2 (en) | 1999-02-01 | 2002-08-26 | Barrier coatings produced by atmospheric glow discharge |
| US10/228,358 | 2002-08-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2004019381A2 true WO2004019381A2 (en) | 2004-03-04 |
| WO2004019381A3 WO2004019381A3 (en) | 2004-05-13 |
Family
ID=31950509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2003/026363 Ceased WO2004019381A2 (en) | 1999-02-01 | 2003-08-22 | Barrier coatings produced by atmospheric glow discharge |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6774018B2 (en) |
| WO (1) | WO2004019381A2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007145513A1 (en) * | 2006-06-16 | 2007-12-21 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
| WO2009096785A1 (en) * | 2008-02-01 | 2009-08-06 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
| WO2009148305A1 (en) * | 2008-06-06 | 2009-12-10 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of moving substrate |
| EP1830610A3 (en) * | 2006-03-02 | 2011-02-23 | Trinc.Org | Plasma discharged static eliminator |
| US8323753B2 (en) | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
| US8338307B2 (en) | 2007-02-13 | 2012-12-25 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
| US8445897B2 (en) | 2008-02-08 | 2013-05-21 | Fujifilm Manufacturing Europe B.V. | Method for manufacturing a multi-layer stack structure with improved WVTR barrier property |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067405B2 (en) * | 1999-02-01 | 2006-06-27 | Sigma Laboratories Of Arizona, Inc. | Atmospheric glow discharge with concurrent coating deposition |
| US7300859B2 (en) * | 1999-02-01 | 2007-11-27 | Sigma Laboratories Of Arizona, Llc | Atmospheric glow discharge with concurrent coating deposition |
| US7557019B2 (en) * | 1999-02-01 | 2009-07-07 | Sigma Laboratories Of Arizona, Llc | Electromagnetic treatment in atmospheric-plasma coating process |
| JP2002322558A (en) * | 2001-04-25 | 2002-11-08 | Konica Corp | Thin film forming method, optical film, polarizing plate and image display device |
| KR100421480B1 (en) * | 2001-06-01 | 2004-03-12 | 엘지.필립스 엘시디 주식회사 | Method for Processing Surface of Organic Isolation Film and Method of Fabricating Thin Film Transistor Substate using the same |
| US6821379B2 (en) | 2001-12-21 | 2004-11-23 | The Procter & Gamble Company | Portable apparatus and method for treating a workpiece |
| US8092643B2 (en) * | 2003-06-16 | 2012-01-10 | Ionfield Systems, Llc | Method and apparatus for cleaning and surface conditioning objects using plasma |
| WO2005000363A2 (en) * | 2003-06-16 | 2005-01-06 | Cerionx, Inc. | Atmospheric pressure non-thermal plasma device to clean and sterilize the surface of probes, cannulas, pin tools, pipettes and spray heads |
| US20060162741A1 (en) * | 2005-01-26 | 2006-07-27 | Cerionx, Inc. | Method and apparatus for cleaning and surface conditioning objects with plasma |
| US20060272675A1 (en) * | 2005-06-02 | 2006-12-07 | Cerionx, Inc. | Method and apparatus for cleaning and surface conditioning objects using plasma |
| US20060162740A1 (en) * | 2005-01-21 | 2006-07-27 | Cerionx, Inc. | Method and apparatus for cleaning and surface conditioning objects using non-equilibrium atmospheric pressure plasma |
| US8092644B2 (en) * | 2003-06-16 | 2012-01-10 | Ionfield Systems, Llc | Method and apparatus for cleaning and surface conditioning objects using plasma |
| US8366871B2 (en) * | 2003-06-16 | 2013-02-05 | Ionfield Holdings, Llc | Method and apparatus for cleaning and surface conditioning objects using plasma |
| US20060272674A1 (en) * | 2005-06-02 | 2006-12-07 | Cerionx, Inc. | Method and apparatus for cleaning and surface conditioning objects using plasma |
| US7638167B2 (en) * | 2004-06-04 | 2009-12-29 | Applied Microstructures, Inc. | Controlled deposition of silicon-containing coatings adhered by an oxide layer |
| US20040261703A1 (en) * | 2003-06-27 | 2004-12-30 | Jeffrey D. Chinn | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
| US9725805B2 (en) * | 2003-06-27 | 2017-08-08 | Spts Technologies Limited | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
| US20050271893A1 (en) * | 2004-06-04 | 2005-12-08 | Applied Microstructures, Inc. | Controlled vapor deposition of multilayered coatings adhered by an oxide layer |
| GB0410749D0 (en) * | 2004-05-14 | 2004-06-16 | Dow Corning Ireland Ltd | Coating apparatus |
| US7879396B2 (en) * | 2004-06-04 | 2011-02-01 | Applied Microstructures, Inc. | High aspect ratio performance coatings for biological microfluidics |
| US7695775B2 (en) * | 2004-06-04 | 2010-04-13 | Applied Microstructures, Inc. | Controlled vapor deposition of biocompatible coatings over surface-treated substrates |
| KR100762573B1 (en) * | 2004-06-04 | 2007-10-01 | 어플라이드 마이크로스트럭쳐스, 인코포레이티드 | Controlled vapor deposition of multilayered coating adhered by an oxide layer |
| RU2007119782A (en) * | 2004-10-29 | 2008-12-10 | Дау Глобал Текнолоджиз Инк. (Us) | WEAR-RESISTANT COATINGS OBTAINED BY PLASMA CHEMICAL DEPOSITION FROM VAPOR PHASE |
| US20060156983A1 (en) * | 2005-01-19 | 2006-07-20 | Surfx Technologies Llc | Low temperature, atmospheric pressure plasma generation and applications |
| US20060222907A1 (en) * | 2005-03-29 | 2006-10-05 | Imation Corp. | Magnetic recording medium having an atmospheric plasma modified substrate |
| US8067258B2 (en) | 2006-06-05 | 2011-11-29 | Applied Microstructures, Inc. | Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures |
| US20100009098A1 (en) * | 2006-10-03 | 2010-01-14 | Hua Bai | Atmospheric pressure plasma electrode |
| US9157191B2 (en) * | 2006-11-02 | 2015-10-13 | Apjet, Inc. | Treatment of fibrous materials using atmospheric pressure plasma polymerization |
| ES2718461T3 (en) * | 2007-02-28 | 2019-07-02 | Corning Inc | Polarizing articles of light and method of making them |
| US20080241489A1 (en) * | 2007-03-30 | 2008-10-02 | Renesas Technology Corp. | Method of forming resist pattern and semiconductor device manufactured with the same |
| US8361276B2 (en) | 2008-02-11 | 2013-01-29 | Apjet, Inc. | Large area, atmospheric pressure plasma for downstream processing |
| GB0900961D0 (en) | 2009-01-20 | 2009-03-04 | Univ Bath | Antimicrobial coating |
| EP2251455B1 (en) | 2009-05-13 | 2017-09-06 | SiO2 Medical Products, Inc. | PECVD coating using an organosilicon precursor |
| US7985188B2 (en) | 2009-05-13 | 2011-07-26 | Cv Holdings Llc | Vessel, coating, inspection and processing apparatus |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| MX2012007950A (en) * | 2010-01-06 | 2012-08-01 | Dow Global Technologies Llc | HUMIDITY RESISTANT PHOTOVOLTAIC DEVICES WITH ELASTOMERIC PROTECTION COAT OF POLISYLOXANE. |
| US20110241269A1 (en) * | 2010-04-01 | 2011-10-06 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| DE102010024086A1 (en) * | 2010-06-17 | 2011-12-22 | WPNLB UG (haftungsbeschränkt) & Co. KG | Apparatus for continuous plasma treatment and / or plasma coating of a piece of material |
| EP2593245A1 (en) * | 2010-07-12 | 2013-05-22 | Université Libre de Bruxelles | Method for polymer plasma deposition |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US8840970B2 (en) | 2011-01-16 | 2014-09-23 | Sigma Laboratories Of Arizona, Llc | Self-assembled functional layers in multilayer structures |
| CN102108485B (en) * | 2011-01-28 | 2012-03-28 | 厦门建霖工业有限公司 | Method for preparing antibacterial coating on surface of plastic |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| CN103930595A (en) | 2011-11-11 | 2014-07-16 | Sio2医药产品公司 | Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| CA2887352A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| US9441325B2 (en) | 2012-10-04 | 2016-09-13 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
| US9433971B2 (en) | 2012-10-04 | 2016-09-06 | The Goodyear Tire & Rubber Company | Atmospheric plasma treatment of reinforcement cords and use in rubber articles |
| JP6509734B2 (en) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | Film inspection method |
| US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| WO2014085348A2 (en) | 2012-11-30 | 2014-06-05 | Sio2 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
| EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
| CN105392916B (en) | 2013-03-11 | 2019-03-08 | Sio2医药产品公司 | Coated Packaging Materials |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| EP2971227B1 (en) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Coating method. |
| US11066745B2 (en) | 2014-03-28 | 2021-07-20 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| US9666415B2 (en) * | 2015-02-11 | 2017-05-30 | Ford Global Technologies, Llc | Heated air plasma treatment |
| US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
| US10368939B2 (en) | 2015-10-29 | 2019-08-06 | Covidien Lp | Non-stick coated electrosurgical instruments and method for manufacturing the same |
| US10441349B2 (en) | 2015-10-29 | 2019-10-15 | Covidien Lp | Non-stick coated electrosurgical instruments and method for manufacturing the same |
| US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12180581B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12181452B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
| US11432869B2 (en) | 2017-09-22 | 2022-09-06 | Covidien Lp | Method for coating electrosurgical tissue sealing device with non-stick coating |
| US10709497B2 (en) | 2017-09-22 | 2020-07-14 | Covidien Lp | Electrosurgical tissue sealing device with non-stick coating |
| CN113507971A (en) | 2019-02-27 | 2021-10-15 | 沃特世科技公司 | Chromatographic seals and coated flow paths to minimize analyte adsorption |
| US11207124B2 (en) | 2019-07-08 | 2021-12-28 | Covidien Lp | Electrosurgical system for use with non-stick coated electrodes |
| US11369427B2 (en) | 2019-12-17 | 2022-06-28 | Covidien Lp | System and method of manufacturing non-stick coated electrodes |
| US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
| EP4628889A3 (en) | 2020-09-24 | 2025-12-10 | Waters Technologies Corporation | Chromatographic hardware improvements for the separation of reactive molecules |
| CN116648537A (en) * | 2020-12-18 | 2023-08-25 | 施福克私人有限公司 | Substrate Handling System |
| US12458997B2 (en) | 2022-11-21 | 2025-11-04 | Covidien Lp | Application of non-stick coatings onto jaws of electrosurgical tissue sealing instruments |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| US5980604A (en) * | 1996-06-13 | 1999-11-09 | The Regents Of The University Of California | Spray formed multifunctional materials |
| US5789145A (en) * | 1996-07-23 | 1998-08-04 | Eastman Kodak Company | Atmospheric pressure glow discharge treatment of base material for photographic applications |
| US6441553B1 (en) * | 1999-02-01 | 2002-08-27 | Sigma Technologies International, Inc. | Electrode for glow-discharge atmospheric-pressure plasma treatment |
-
2002
- 2002-08-26 US US10/228,358 patent/US6774018B2/en not_active Expired - Lifetime
-
2003
- 2003-08-22 WO PCT/US2003/026363 patent/WO2004019381A2/en not_active Ceased
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1830610A3 (en) * | 2006-03-02 | 2011-02-23 | Trinc.Org | Plasma discharged static eliminator |
| US8323753B2 (en) | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
| WO2007145513A1 (en) * | 2006-06-16 | 2007-12-21 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma |
| US8338307B2 (en) | 2007-02-13 | 2012-12-25 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
| WO2009096785A1 (en) * | 2008-02-01 | 2009-08-06 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
| US8702999B2 (en) | 2008-02-01 | 2014-04-22 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
| US8445897B2 (en) | 2008-02-08 | 2013-05-21 | Fujifilm Manufacturing Europe B.V. | Method for manufacturing a multi-layer stack structure with improved WVTR barrier property |
| WO2009148305A1 (en) * | 2008-06-06 | 2009-12-10 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of moving substrate |
| US8609203B2 (en) | 2008-06-06 | 2013-12-17 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of moving substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004019381A3 (en) | 2004-05-13 |
| US6774018B2 (en) | 2004-08-10 |
| US20020195950A1 (en) | 2002-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6774018B2 (en) | Barrier coatings produced by atmospheric glow discharge | |
| US7067405B2 (en) | Atmospheric glow discharge with concurrent coating deposition | |
| US7300859B2 (en) | Atmospheric glow discharge with concurrent coating deposition | |
| US6441553B1 (en) | Electrode for glow-discharge atmospheric-pressure plasma treatment | |
| US6118218A (en) | Steady-state glow-discharge plasma at atmospheric pressure | |
| JP4921710B2 (en) | Method for generating atmospheric pressure glow discharge plasma | |
| US7557019B2 (en) | Electromagnetic treatment in atmospheric-plasma coating process | |
| EP0605534B1 (en) | Apparatus for rapid plasma treatments and method | |
| CN1109130C (en) | Method and apparatus for depositing carbon-rich coatings on moving substrates | |
| US4940521A (en) | Process and apparatus for pretreating the surface of a single-layer or multilayer molded material by means of an electrical corona discharge | |
| KR100623540B1 (en) | Jet plasma process and apparatus for depositing coatings and coatings obtained therefrom | |
| EP1493310A1 (en) | Protective coating composition | |
| EP1540714A2 (en) | Barrier coatings produced by atmospheric glow discharge | |
| US5215636A (en) | Pulsed discharge surface treatment apparatus and process | |
| US20030049468A1 (en) | Cascade arc plasma and abrasion resistant coatings made therefrom | |
| JPWO2005059202A1 (en) | Thin film forming method and substrate on which a thin film is formed by the method | |
| US8980007B2 (en) | Thin film forming apparatus and thin film forming method | |
| WO2009073292A1 (en) | Process and aparatus for atmospheric pressure plasma enhanced chemical vapor deposition | |
| US20100062176A1 (en) | Boundary layer disruptive preconditioning in atmospheric-plasma process | |
| Suzuki et al. | Synthesis of diamond-like hydrocarbon films by atmospheric pressure filamentary dielectric barrier discharge | |
| JPH04168281A (en) | Atmospheric pressure glow plasma device | |
| JP2646457B2 (en) | Plasma processing-ion plating processing equipment | |
| JPH0663103B2 (en) | Plasma processing-vacuum deposition equipment | |
| JPWO2009090987A1 (en) | Atmospheric pressure plasma discharge treatment apparatus and atmospheric pressure plasma discharge treatment method | |
| KR20020031298A (en) | Method for forming film with low dielectric content on semiconductor substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 2004529864 Country of ref document: JP Ref document number: 20038204568 Country of ref document: CN |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 2003793301 Country of ref document: EP |
|
| WWP | Wipo information: published in national office |
Ref document number: 2003793301 Country of ref document: EP |