WO2004017385A2 - Device for rapid heat treatment comprising inside the reaction chamber cold-walled halogen infrared lamps - Google Patents
Device for rapid heat treatment comprising inside the reaction chamber cold-walled halogen infrared lamps Download PDFInfo
- Publication number
- WO2004017385A2 WO2004017385A2 PCT/FR2003/002492 FR0302492W WO2004017385A2 WO 2004017385 A2 WO2004017385 A2 WO 2004017385A2 FR 0302492 W FR0302492 W FR 0302492W WO 2004017385 A2 WO2004017385 A2 WO 2004017385A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lamps
- reaction chamber
- envelope
- coolant
- casing
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- Rapid heat treatment device comprising cold wall halogen infrared lamps inside the reaction chamber.
- the invention relates to a device for rapid heat treatment, by infrared type electromagnetic radiation, of a substrate placed in a reaction chamber with cold metal walls, the device comprising halogen infrared lamps each comprising a first tubular quartz envelope.
- Rapid heat treatment processes allow either to modify the physico-chemical properties of a material, for example during annealing (RTP) implantation of a dopant, oxidation or nitriding, i.e. depositing a material in the form of a layer on a substrate, by vapor deposition
- RTCVD halogen lamps with infrared radiation as a source of energy for physical phenomena and chemical reactions often taking place in the presence of reactive gas.
- infrared halogen lamps are installed in front of the substrate, so as to obtain optimal irradiation of the substrate.
- FIG. 1 representing an oven 1 for rapid heat treatment
- the lamps 2 are separated from the reaction chamber 3 in which the substrate 4 is placed.
- the walls of the halogen lamps 2 can reach very high temperatures and the gases used in the reaction chamber 3 are liable to react on contact with the hot walls of the lamps 2, causing their destruction.
- the lamps 2 are therefore placed in a compartment 5 having a reflector, the compartment 5 being separated from the reaction chamber 3 by a quartz window 6, ideally transparent to the infrared radiation emitted by the lamps 2.
- the window Part of the infrared radiation emitted by the lamps is nevertheless absorbed by the window, which causes it to heat up.
- the substrate when the substrate 4 is placed in the reaction chamber 3 and heated by the infrared radiation from the lamps 2, the substrate can emit radiation of wavelength greater than that of the lamps. This radiation can be absorbed by the window 6 and cause its warming up. If the window is too hot, a deposit may form on the window 6 on the side of the reaction chamber 3, preventing the illumination of the substrate 4.
- patent application FR-A1 -2686967 describes an oven 1 with two portholes 6 between which circulates a coolant 7 transparent to the wavelength emitted by the infrared lamps 2 ( Figure 2).
- This solution is however limited to relatively short processes, the face of the porthole 6 located on the side of the reaction chamber 3 nevertheless ends up heating up, because of the poor thermal conductivity of the quartz and the thickness of the portholes 6
- the portholes generally have a thickness of at least one centimeter, which reinforces their mechanical resistance in the face of a significant pressure difference between the reaction chamber and the compartment 5.
- the object of the invention is to provide a rapid heat treatment device that does not require a quartz window and allows heat treatment and the injection of uniform reactive gases over the entire surface of the substrate.
- this object is achieved by the fact that: - the lamps are arranged inside the reaction chamber and each comprise an external quartz envelope, concentric with the first envelope and forming an external wall of a circulation channel for a coolant transparent to the infrared radiation of the lamps, so as to form cold-walled lamps,
- the coolant comprises compounds with a carbon chain saturated with halogens or compounds with a carbon and oxygen chain saturated with halogens,
- the device comprises fixing means for mounting the outer casing between opposite side walls of the reaction chamber.
- the lamps each comprise an intermediate tubular envelope of quartz, arranged so as to delimit a tubular space with the first envelope and to constitute an internal wall of the coolant circulation channel.
- the device comprises control means intended to maintain the temperature of the lamp coolant at a predetermined value, between 5 ° C and 300 ° C.
- the device comprising means for injecting a reactive gas into the reaction chamber and the means injection means comprise a plurality of supply channels comprising outlet orifices, the lamps being arranged between said orifices and the substrate.
- FIGS 1 and 2 are schematic representations of two rapid heat treatment devices according to the prior art.
- Figures 3 and 4 are views in partial section respectively of a first and a second embodiment of a lamp fitted to a device according to the invention.
- FIG. 5 represents a schematic view of a first embodiment of a device according to the invention, comprising lamps according to FIG. 4.
- FIGS. 6 and 7 show, in the form of block diagrams, respectively the means for controlling the temperature of the walls of the lamps and the means for controlling the pressure of the reaction chamber of a device according to the invention.
- FIGS. 8 and 9 are schematic views respectively of a second and of a third embodiment of a device according to the invention, comprising lamps according to FIG. 4.
- a rapid heat treatment device comprises a reaction chamber 3 in which are arranged a substrate 4 to be treated and halogen tubular lamps 2 with a cold wall, generating infrared electromagnetic radiation.
- a tubular halogen lamp 2 comprises a first quartz envelope 8, which contains a halogen gas and a tungsten filament connected to each terminal 11 of the lamp 2.
- the lamp 2 comprises an external envelope 9, made of quartz and concentric with the first envelope 8.
- the external envelope 9 forms the external wall of a circulation channel 10 in which circulates a coolant coolant transparent to the infrared radiation emitted by the lamp 2.
- the lamps 2 are arranged inside the reaction chamber. They are mounted between the walls of the reaction chamber, the two terminals 11 of each lamp 2 projecting outside the reaction chamber, while the quartz envelope 9 is fixed between two opposite walls 12 of the reaction chamber.
- first metal supports 13, fixed (if) to each of the side and opposite walls 12 of the reaction chamber 3 around an orifice 19 formed in the wall 12, define a first cylindrical opening.
- a second support 14, fixed (s2) to the first support 13, delimits a second cylindrical opening with a diameter greater than the diameter of the first opening.
- the lamp 2 is arranged so that the first supports 13 come to bear on the ends of the first casing 8, while the second supports 14 come to bear on the ends of the external casing 9.
- a passage 15 is provided in the support 13, so as to supply the circulation channel 10 with coolant.
- the assembly is sealed by seals 16a and 16b arranged on the one hand at the interface of the first envelope
- the seals 16a and 16b can be damaged by heat released by the lamps are preferably protected by metallic deposits, deposited locally on the first envelope 8 and on the external envelope 9.
- the assembly described above makes it possible to change only the first envelope 8 containing the filament, when the lamp is defective, without having need to change the whole. It is then however necessary to empty the circulation channel 10 before removing the first casing 8 from the reaction chamber.
- the operation of replacing the first envelope takes place from the outside of the reaction chamber, at the terminals 11, which makes this operation quick and easy.
- the coolant circulating in the circulation channel 10, transparent to the infrared radiation of the lamps, comprises compounds with carbon chain saturated by halogens or compounds with carbon chain and oxygenated saturated by halogens. It is preferably made up of compounds chosen from compounds with a carbon chain saturated with halogens or compounds with a carbon chain and oxygenated saturated with halogens. Compounds with a carbon chain saturated with halogens or compounds with a carbon and oxygen chain saturated with halogens dissipate a large amount of heat emitted by lamps 2. In addition, their high boiling temperature prevents them from boiling in the circulation channel 10, in contact with the lamp 2. They can thus perfectly fulfill their role as lamp coolant.
- the coolant can, for example, be chosen from perfluoro opolyethers or from oils made up of low molecular weight polymers of trifluoromonochloroethylene.
- the coolant is maintained by control means at a predetermined temperature, between 5 ° C and 300 ° C, and preferably between 5 ° C and 25 ° C.
- the external envelope 9 of the lamp then forming the external wall of the circulation channel 10 is cold, thus making the external wall of the lamp cold.
- the term cold is to be considered by comparison with the usual temperature of the walls of conventional halogen lamps.
- the coolant is directly in contact with the first envelope of the lamp, cooling it, which has the disadvantage of reducing the life of the halogen lamp.
- the walls surrounding the tungsten filament and the halogen gas must be maintained at a temperature of between 200 ° C. and 900 ° C. since this temperature range avoids a deposit on the walls and allows continuous regeneration of the tungsten filament.
- tungsten evaporates under the effect of electric current and combines in gaseous form with halogen gas.
- the tungsten halide elements contained in the gas also decompose under the effect of temperature and the tungsten is redeposited on the filament.
- an intermediate tubular quartz casing 17 may be placed between the first casing 8 and the external casing 9, so as to delimit a tubular space 18 with the first casing 8 ( Figure 4).
- the intermediate envelope 17 then constitutes the internal wall of the circulation channel 10 of the cooling liquid, the latter no longer being in contact with the first envelope 8 and serving only to cool the external envelope 9.
- the first support 13 comes to bear on the intermediate casing 17, the seals 16a being arranged at the interface of the intermediate casing 17, of the wall 12 and of the first support 13.
- Metal deposits can be deposited locally on the casing intermediate 17 or on the outer casing 9, so as to protect the seals 16a and 16b.
- the rapid heat treatment device may also include means for circulating air, at ambient temperature, in the tubular space 18, so as to maintain the first envelope 8 at a temperature between 200 ° C and 900 ° C . It may also include means for controlling the air flow and the temperature in the tubular space 18.
- the use of an intermediate envelope 17 has the advantage of having to change only the first envelope of the lamp, in the event of malfunction or maintenance of the lamp 2, without having to empty the circulation channel 10, the intermediate and external envelopes remaining in place.
- Tubular halogen lamps 2, each associated with an external envelope 9 made of quartz, form cold-walled lamps, which makes it possible to arrange them inside a reaction chamber 3, without being separated from the latter by a quartz window.
- a reaction chamber 3 preferably made of stainless steel or aluminum, consists of two parts, a lower part 20a and an upper part 20b, so as to render the interior of the reaction chamber accessible.
- the two parts 20a and 20b are sealed by seals 21.
- the reaction chamber 3 has a double wall having external walls 12a and internal 12b, delimiting a channel 22 in which circulates a liquid for cooling the walls.
- the channel 22 is supplied by supply channels 23.
- a gas injection tube 24, neutral or reactive passes through the metal walls 12a and 12b of the lower part 20a of the reaction chamber, so as to circulate the gas inside the reaction chamber.
- a pyrometer 41 intended to measure the temperature on the surface of the substrate can be placed in the upper part 20b of the reaction chamber, on the side of the lamps 2, so as to measure the temperature on the surface of the substrate on the side of the lamps. This is made possible thanks to the cold walls of the lamps 2 and to the absence of porthole. In fact, the presence of a porthole causes the wavelengths of the pyrometer to be absorbed by it. The pyrometer must then be placed in the lower part 20a of the reaction chamber.
- a substrate 4, intended to be treated, is placed inside the reaction chamber 3.
- Five lamps 2 are arranged above it, on the same plane, and are integral with the opposite side walls 12 located in the section plane of FIG. 5.
- the lamps 2, represented in FIG. 5, are of the type represented in FIG. 4.
- the coolant of each lamp circulates between the intermediate 17 and external 9 envelopes and is brought in by pipes 25, which can themselves be connected to means for controlling the temperature and the flow rate of the coolant of the lamps 2 (FIG. 6).
- the supply pipes 25 supplying the circulation channel 10 of each lamp 2 comprise an inlet 25a and an outlet 25b, connected to a secondary circuit 30 of a first heat exchanger 31.
- a pump 29 is preferably arranged between the inlet 25a and the first heat exchanger 31.
- the first exchanger 31 comprises a primary circuit 32 supplied with air, oil or water, so as to regulate the temperature lamp coolant at a predetermined temperature between 5 ° C and 300 ° C.
- the circuit 30 preferably also acts as the primary circuit of a second heat exchanger 33.
- the secondary circuit of the second heat exchanger 33, in which the coolant flows from the metal walls of the reaction chamber 3, is connected to the supply channels 23.
- An expansion vessel 35 can be placed between the first and second heat exchangers 31 and 33.
- the rapid heat treatment device can also include means for controlling and regulating the pressure (FIG. 7) of the reaction chamber.
- the reaction chamber 3 has an opening 39 (FIG. 5) intended to be connected to the pressure control and regulation means, so as to carry out rapid heat treatments at atmospheric pressure or to lower the pressure to voids primary and secondary, with controlled variable gas flow rates.
- a pump 36 is arranged in series with a control valve 37 at the outlet of the opening 39 of the reaction chamber.
- the valve 37 is controlled by a pressure regulation circuit 38, receiving as input a pressure setpoint on the one hand and the value measured at the outlet of the chamber on the other hand by a pressure sensor. pressure 40 of any known type.
- the circulation channels 10 for the coolant of the lamps 2 are connected in series and connected to only two supply pipes 25.
- a gas injection tube 24 is located in the lower part 20a of the reaction chamber, substantially at the level of the substrate 4.
- the reaction chamber 3 also comprises, a plurality of gas supply channels 26, passing through the metal walls 12a and 12b of the upper part 20b of the reaction chamber 3. '
- An expansion chamber 27 is preferably located upstream of the gas supply channels 26.
- the expansion chamber is arranged above the upper part 20b of the reaction chamber, the expansion chamber 27 being itself even supplied by a gas injection tube 34.
- the gas supply channels 26 have outlet orifices 28 disposed above the lamps 2. The exterior wall of the lamps being cold, the gas is then injected between the lamps , without risk of decomposition. This has the advantage of injecting the gases uniformly over the entire surface of the substrate 4.
- two series of lamps 2 can be arranged on either side of the substrate 4, which promotes uniform heat treatment over the entire substrate and makes it possible to increase the speed of heating of the substrate.
- two series of lamps 2 can also be arranged at two different heights and on the same side of the substrate, the first series of lamps being arranged orthogonally to the second series. It is also possible to combine these two embodiments.
- lamps of the type described in document US20020024277 could possibly be used in the reaction chamber. However, they have the disadvantage of requiring the change of the whole of the cooled lamp in the event of failure of the filament of the lamp.
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03756539A EP1573781A2 (en) | 2002-08-14 | 2003-08-08 | Device for rapid heat treatment comprising inside the reaction chamber cold-walled halogen infrared lamps |
AU2003285678A AU2003285678A1 (en) | 2002-08-14 | 2003-08-08 | Device for rapid heat treatment comprising inside the reaction chamber cold-walled halogen infrared lamps |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/10292 | 2002-08-14 | ||
FR0210292A FR2843629B1 (en) | 2002-08-14 | 2002-08-14 | FAST THERMAL PROCESSING DEVICE HAVING INSIDE THE REACTION CHAMBER OF COLD-WALLED HALOGEN INFRARED LAMPS |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004017385A2 true WO2004017385A2 (en) | 2004-02-26 |
WO2004017385A3 WO2004017385A3 (en) | 2004-04-08 |
Family
ID=30775989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2003/002492 WO2004017385A2 (en) | 2002-08-14 | 2003-08-08 | Device for rapid heat treatment comprising inside the reaction chamber cold-walled halogen infrared lamps |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1573781A2 (en) |
AU (1) | AU2003285678A1 (en) |
FR (1) | FR2843629B1 (en) |
WO (1) | WO2004017385A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010008084A1 (en) * | 2010-02-15 | 2011-08-18 | Leybold Optics GmbH, 63755 | Device for thermal treatment of substrates |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB940627A (en) * | 1958-02-01 | 1963-10-30 | Hans Beckmann | Method and device for deep freezing of foods (except fish) or medicines |
US4960951A (en) * | 1989-01-30 | 1990-10-02 | E. I. Du Pont De Nemours And Company | Novel perfluoropolyethers |
EP1137053A2 (en) * | 2000-03-24 | 2001-09-26 | Micro C Technologies, Inc. | Water cooled support for lamps and rapid thermal processing chamber |
US20010031229A1 (en) * | 1998-10-20 | 2001-10-18 | Spjut Reed E. | UV-enhanced, in-line, infrared phosphorous diffusion furnace |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5977289A (en) * | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | Beam irradiating furnace |
DE10041564C2 (en) * | 2000-08-24 | 2002-06-27 | Heraeus Noblelight Gmbh | Coolable infrared radiator element |
-
2002
- 2002-08-14 FR FR0210292A patent/FR2843629B1/en not_active Expired - Fee Related
-
2003
- 2003-08-08 WO PCT/FR2003/002492 patent/WO2004017385A2/en not_active Application Discontinuation
- 2003-08-08 EP EP03756539A patent/EP1573781A2/en not_active Withdrawn
- 2003-08-08 AU AU2003285678A patent/AU2003285678A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB940627A (en) * | 1958-02-01 | 1963-10-30 | Hans Beckmann | Method and device for deep freezing of foods (except fish) or medicines |
US4960951A (en) * | 1989-01-30 | 1990-10-02 | E. I. Du Pont De Nemours And Company | Novel perfluoropolyethers |
US20010031229A1 (en) * | 1998-10-20 | 2001-10-18 | Spjut Reed E. | UV-enhanced, in-line, infrared phosphorous diffusion furnace |
EP1137053A2 (en) * | 2000-03-24 | 2001-09-26 | Micro C Technologies, Inc. | Water cooled support for lamps and rapid thermal processing chamber |
Also Published As
Publication number | Publication date |
---|---|
EP1573781A2 (en) | 2005-09-14 |
FR2843629A1 (en) | 2004-02-20 |
AU2003285678A1 (en) | 2004-03-03 |
FR2843629B1 (en) | 2005-05-06 |
WO2004017385A3 (en) | 2004-04-08 |
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