WO2004015755A1 - Method for fabricating a self-aligned bipolar transistor and related structure - Google Patents
Method for fabricating a self-aligned bipolar transistor and related structure Download PDFInfo
- Publication number
- WO2004015755A1 WO2004015755A1 PCT/US2003/021193 US0321193W WO2004015755A1 WO 2004015755 A1 WO2004015755 A1 WO 2004015755A1 US 0321193 W US0321193 W US 0321193W WO 2004015755 A1 WO2004015755 A1 WO 2004015755A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bipolar transistor
- sacrificial
- base
- post
- planarizing layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 125000006850 spacer group Chemical group 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 26
- 239000011368 organic material Substances 0.000 claims description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical group [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 80
- 239000000463 material Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03784755A EP1535322A4 (en) | 2002-08-13 | 2003-07-03 | Method for fabricating a self-aligned bipolar transistor and related structure |
JP2004527591A JP4378283B2 (en) | 2002-08-13 | 2003-07-03 | Method for fabricating self-aligned bipolar transistors and related structures |
HK06103048.0A HK1083041A1 (en) | 2002-08-13 | 2006-03-09 | Method for fabricating a self-aligned bipolar transistor and related structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/218,527 US6784467B1 (en) | 2002-08-13 | 2002-08-13 | Method for fabricating a self-aligned bipolar transistor and related structure |
US10/218,527 | 2002-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004015755A1 true WO2004015755A1 (en) | 2004-02-19 |
WO2004015755B1 WO2004015755B1 (en) | 2005-11-10 |
Family
ID=31714557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/021193 WO2004015755A1 (en) | 2002-08-13 | 2003-07-03 | Method for fabricating a self-aligned bipolar transistor and related structure |
Country Status (7)
Country | Link |
---|---|
US (2) | US6784467B1 (en) |
EP (1) | EP1535322A4 (en) |
JP (1) | JP4378283B2 (en) |
CN (1) | CN100487875C (en) |
HK (1) | HK1083041A1 (en) |
TW (1) | TWI229388B (en) |
WO (1) | WO2004015755A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005109494A1 (en) | 2004-04-30 | 2005-11-17 | Infineon Technologies Ag | Method for producing a planar spacer, an associated bipolar transistor and an associated bicmos circuit arrangement |
JP2008520088A (en) * | 2004-11-10 | 2008-06-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Bipolar transistor with self-aligned retrograde external base implantation profile and self-aligned silicide |
US7763518B2 (en) | 2004-02-25 | 2010-07-27 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867440B1 (en) * | 2002-08-13 | 2005-03-15 | Newport Fab, Llc | Self-aligned bipolar transistor without spacers and method for fabricating same |
US7064415B1 (en) * | 2002-08-13 | 2006-06-20 | Newport Fab Llc | Self-aligned bipolar transistor having increased manufacturability |
FR2858877B1 (en) * | 2003-08-11 | 2005-10-21 | St Microelectronics Sa | BIPOLAR TRANSISTOR WITH HETEROJUNCTION |
US7709338B2 (en) * | 2006-12-21 | 2010-05-04 | International Business Machines Corporation | BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices |
CN100580898C (en) * | 2007-11-28 | 2010-01-13 | 中国科学院微电子研究所 | Method for eliciting sub-micron HBT emitter/HEMT grid |
JP5545827B2 (en) * | 2010-03-25 | 2014-07-09 | 旭化成エレクトロニクス株式会社 | Method for manufacturing silicon germanium transistor |
US8492237B2 (en) | 2011-03-08 | 2013-07-23 | International Business Machines Corporation | Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base |
US9252217B2 (en) * | 2014-05-29 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and formation thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4885614A (en) * | 1987-07-10 | 1989-12-05 | Hitachi, Ltd. | Semiconductor device with crystalline silicon-germanium-carbon alloy |
US5093272A (en) | 1990-01-08 | 1992-03-03 | Siemens Aktiengesellschaft | Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors |
US5268313A (en) * | 1991-01-14 | 1993-12-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having a spacer |
US20010039095A1 (en) * | 2000-01-21 | 2001-11-08 | Michel Marty | Process for producing a bipolar transistor with self-aligned emitter and extrinsic base |
WO2002041382A1 (en) | 2000-11-17 | 2002-05-23 | Conexant Systems, Inc. | Method for controlling critical dimension in a polycrystalline silicon emitter and related structure |
WO2002043132A1 (en) | 2000-11-22 | 2002-05-30 | Conexant Systems, Inc. | Method for fabricating a self-aligned emitter in a bipolar transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451532A (en) * | 1994-03-15 | 1995-09-19 | National Semiconductor Corp. | Process for making self-aligned polysilicon base contact in a bipolar junction transistor |
US6020246A (en) * | 1998-03-13 | 2000-02-01 | National Semiconductor Corporation | Forming a self-aligned epitaxial base bipolar transistor |
FR2778022B1 (en) * | 1998-04-22 | 2001-07-13 | France Telecom | VERTICAL BIBOLAR TRANSISTOR, ESPECIALLY BASED ON SIGNAL HETEROJUNCTION, AND MANUFACTURING METHOD |
-
2002
- 2002-08-13 US US10/218,527 patent/US6784467B1/en not_active Expired - Lifetime
-
2003
- 2003-07-03 EP EP03784755A patent/EP1535322A4/en not_active Withdrawn
- 2003-07-03 JP JP2004527591A patent/JP4378283B2/en not_active Expired - Fee Related
- 2003-07-03 CN CNB038194406A patent/CN100487875C/en not_active Expired - Fee Related
- 2003-07-03 WO PCT/US2003/021193 patent/WO2004015755A1/en active Application Filing
- 2003-07-31 TW TW092121031A patent/TWI229388B/en not_active IP Right Cessation
-
2004
- 2004-06-17 US US10/870,900 patent/US7041564B1/en not_active Expired - Lifetime
-
2006
- 2006-03-09 HK HK06103048.0A patent/HK1083041A1/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4885614A (en) * | 1987-07-10 | 1989-12-05 | Hitachi, Ltd. | Semiconductor device with crystalline silicon-germanium-carbon alloy |
US5093272A (en) | 1990-01-08 | 1992-03-03 | Siemens Aktiengesellschaft | Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors |
US5268313A (en) * | 1991-01-14 | 1993-12-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having a spacer |
US20010039095A1 (en) * | 2000-01-21 | 2001-11-08 | Michel Marty | Process for producing a bipolar transistor with self-aligned emitter and extrinsic base |
WO2002041382A1 (en) | 2000-11-17 | 2002-05-23 | Conexant Systems, Inc. | Method for controlling critical dimension in a polycrystalline silicon emitter and related structure |
WO2002043132A1 (en) | 2000-11-22 | 2002-05-30 | Conexant Systems, Inc. | Method for fabricating a self-aligned emitter in a bipolar transistor |
Non-Patent Citations (1)
Title |
---|
See also references of EP1535322A4 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7763518B2 (en) | 2004-02-25 | 2010-07-27 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
US7911024B2 (en) | 2004-02-25 | 2011-03-22 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
WO2005109494A1 (en) | 2004-04-30 | 2005-11-17 | Infineon Technologies Ag | Method for producing a planar spacer, an associated bipolar transistor and an associated bicmos circuit arrangement |
DE102004021241A1 (en) * | 2004-04-30 | 2005-11-17 | Infineon Technologies Ag | A method of fabricating a planar spacer, an associated bipolar transistor, and associated BiCMOS circuitry |
US7709339B2 (en) | 2004-04-30 | 2010-05-04 | Infineon Technologies Ag | Method for producing a planar spacer, an associated bipolar transistor and an associated BiCMOS circuit arrangement |
JP2008520088A (en) * | 2004-11-10 | 2008-06-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Bipolar transistor with self-aligned retrograde external base implantation profile and self-aligned silicide |
Also Published As
Publication number | Publication date |
---|---|
US7041564B1 (en) | 2006-05-09 |
TW200405477A (en) | 2004-04-01 |
TWI229388B (en) | 2005-03-11 |
HK1083041A1 (en) | 2006-06-23 |
JP2006505922A (en) | 2006-02-16 |
US6784467B1 (en) | 2004-08-31 |
WO2004015755B1 (en) | 2005-11-10 |
CN100487875C (en) | 2009-05-13 |
EP1535322A1 (en) | 2005-06-01 |
CN1714435A (en) | 2005-12-28 |
JP4378283B2 (en) | 2009-12-02 |
EP1535322A4 (en) | 2008-07-23 |
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