WO2004006298A3 - Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters - Google Patents

Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters Download PDF

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Publication number
WO2004006298A3
WO2004006298A3 PCT/US2003/019038 US0319038W WO2004006298A3 WO 2004006298 A3 WO2004006298 A3 WO 2004006298A3 US 0319038 W US0319038 W US 0319038W WO 2004006298 A3 WO2004006298 A3 WO 2004006298A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
sensor
energy
antenna
additionally
Prior art date
Application number
PCT/US2003/019038
Other languages
French (fr)
Other versions
WO2004006298A2 (en
Inventor
Richard Parsons
Original Assignee
Tokyo Electron Ltd
Richard Parsons
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Richard Parsons filed Critical Tokyo Electron Ltd
Priority to JP2004519599A priority Critical patent/JP2005531931A/en
Priority to AU2003263746A priority patent/AU2003263746A1/en
Publication of WO2004006298A2 publication Critical patent/WO2004006298A2/en
Publication of WO2004006298A3 publication Critical patent/WO2004006298A3/en
Priority to US11/023,383 priority patent/US20050183821A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool (110) and an antenna (140) for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, the RF sensor may be configured for wideband reception of multiple harmonics of the RF energy that is radiated from the plasma processing tool. Further, the RF sensor may be coupled to a high pass filter and a processor (150) for processing the received RF energy. Additionally, the antenna may be located within an enclosure with absorbers to reduce the interference experienced by the RF sensor. Additionally, a tool control may be coupled to the processor to provided to adjust and maintain various parameters of plasma processing according to the information provided by the received RF energy.
PCT/US2003/019038 2002-07-03 2003-06-18 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters WO2004006298A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004519599A JP2005531931A (en) 2002-07-03 2003-06-18 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
AU2003263746A AU2003263746A1 (en) 2002-07-03 2003-06-18 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
US11/023,383 US20050183821A1 (en) 2002-07-03 2004-12-29 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39310102P 2002-07-03 2002-07-03
US60/393,101 2002-07-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/023,383 Continuation US20050183821A1 (en) 2002-07-03 2004-12-29 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

Publications (2)

Publication Number Publication Date
WO2004006298A2 WO2004006298A2 (en) 2004-01-15
WO2004006298A3 true WO2004006298A3 (en) 2004-05-13

Family

ID=30115543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019038 WO2004006298A2 (en) 2002-07-03 2003-06-18 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

Country Status (6)

Country Link
US (1) US20050183821A1 (en)
JP (1) JP2005531931A (en)
CN (1) CN1666316A (en)
AU (1) AU2003263746A1 (en)
TW (1) TWI246137B (en)
WO (1) WO2004006298A2 (en)

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US7728602B2 (en) * 2007-02-16 2010-06-01 Mks Instruments, Inc. Harmonic derived arc detector
DE102009011960B4 (en) * 2009-03-10 2013-06-13 Schott Ag Method for monitoring plasma discharges
US8624603B2 (en) * 2010-11-22 2014-01-07 General Electric Company Sensor assembly and methods of adjusting the operation of a sensor
US10718606B2 (en) 2015-04-17 2020-07-21 Nikon Corporation Determination of customized components for fitting wafer profile
GB201705202D0 (en) * 2017-03-31 2017-05-17 Univ Dublin City System and method for remote sensing a plasma
GB202005828D0 (en) 2020-04-21 2020-06-03 Univ Dublin City Electromagnetic field signal acquisition system for high signal-t-noise ratios, and electrical noise immunity
EP4020520A1 (en) 2020-12-22 2022-06-29 Impedans Ltd Apparatus for sensing rf signals from rf plasma processing equipment
WO2023139066A1 (en) * 2022-01-18 2023-07-27 Ucl Business Ltd Plasma discharge monitoring method
EP4250335A1 (en) 2022-03-25 2023-09-27 Impedans Ltd Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber

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US5472561A (en) * 1993-12-07 1995-12-05 Sematech, Inc. Radio frequency monitor for semiconductor process control
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JPH09266098A (en) * 1996-03-29 1997-10-07 Seiko Epson Corp Plasma condition detecting device and method, and etching terminating point detecting device and method
WO1999014394A1 (en) * 1997-09-17 1999-03-25 Tokyo Electron Limited Device and method for detecting and preventing arcing in rf plasma systems
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Also Published As

Publication number Publication date
AU2003263746A8 (en) 2004-01-23
US20050183821A1 (en) 2005-08-25
WO2004006298A2 (en) 2004-01-15
CN1666316A (en) 2005-09-07
TW200406860A (en) 2004-05-01
TWI246137B (en) 2005-12-21
JP2005531931A (en) 2005-10-20
AU2003263746A1 (en) 2004-01-23

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