WO2003095698A3 - Device and method for the electron beam attenuation of reactively formed layers on substrates - Google Patents

Device and method for the electron beam attenuation of reactively formed layers on substrates Download PDF

Info

Publication number
WO2003095698A3
WO2003095698A3 PCT/DE2003/001524 DE0301524W WO03095698A3 WO 2003095698 A3 WO2003095698 A3 WO 2003095698A3 DE 0301524 W DE0301524 W DE 0301524W WO 03095698 A3 WO03095698 A3 WO 03095698A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
substrate
formed layers
substrates
shield
Prior art date
Application number
PCT/DE2003/001524
Other languages
German (de)
French (fr)
Other versions
WO2003095698A2 (en
Inventor
Otmar Zimmer
Peter Siemroth
Bernd Schultrich
Steffen Schenk
Ulf Seyfert
Christian Hecht
Ekkehart Reinhold
Bernd Schuhmacher
Original Assignee
Fraunhofer Ges Forschung
Otmar Zimmer
Peter Siemroth
Bernd Schultrich
Steffen Schenk
Ulf Seyfert
Christian Hecht
Ekkehart Reinhold
Bernd Schuhmacher
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10228925A external-priority patent/DE10228925B4/en
Application filed by Fraunhofer Ges Forschung, Otmar Zimmer, Peter Siemroth, Bernd Schultrich, Steffen Schenk, Ulf Seyfert, Christian Hecht, Ekkehart Reinhold, Bernd Schuhmacher filed Critical Fraunhofer Ges Forschung
Priority to AU2003239759A priority Critical patent/AU2003239759A1/en
Publication of WO2003095698A2 publication Critical patent/WO2003095698A2/en
Publication of WO2003095698A3 publication Critical patent/WO2003095698A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment

Abstract

The invention relates to a device and method for the electron beam attenuation of reactively formed layers on substrates in a vacuum. The aim of the invention is to increase the efficiency compared to conventional solutions and to improve the quality of the reactively formed layers. To these ends, the invention provides that both a crucible containing a chemical element as well as a substrate to be coated are provided inside a vacuum chamber, and an electron beam source is provided on said vacuum chamber. A shield with an aperture opening, through which the produced vapor can reach the substrate, is placed between the crucible containing the chemical element and the substrate. The shield protects at least one element for exciting, dissociating and/or ionizing a reactive gas, which is introduced via at least one gas inlet protectively arranged between the substrate and the shield.
PCT/DE2003/001524 2002-05-10 2003-05-07 Device and method for the electron beam attenuation of reactively formed layers on substrates WO2003095698A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003239759A AU2003239759A1 (en) 2002-05-10 2003-05-07 Device and method for the electron beam attenuation of reactively formed layers on substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10221816.1 2002-05-10
DE10221816 2002-05-10
DE10228925A DE10228925B4 (en) 2002-05-10 2002-06-25 Apparatus and method for electron beam evaporation of reactively formed layers on substrates
DE10228925.5 2002-06-25

Publications (2)

Publication Number Publication Date
WO2003095698A2 WO2003095698A2 (en) 2003-11-20
WO2003095698A3 true WO2003095698A3 (en) 2004-04-29

Family

ID=29421507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/001524 WO2003095698A2 (en) 2002-05-10 2003-05-07 Device and method for the electron beam attenuation of reactively formed layers on substrates

Country Status (2)

Country Link
AU (1) AU2003239759A1 (en)
WO (1) WO2003095698A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0307745D0 (en) * 2003-04-03 2003-05-07 Microemissive Displays Ltd Method and apparatus for depositing material on a substrate
WO2019096391A1 (en) * 2017-11-16 2019-05-23 Applied Materials, Inc. Method and apparatus for vapor depositing an insulation layer of metal oxide on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04191364A (en) * 1990-11-27 1992-07-09 Nkk Corp Method and device for ion plating
JPH04246168A (en) * 1991-01-28 1992-09-02 Japan Steel Works Ltd:The Method and apparatus for forming compound thin film
US5227203A (en) * 1992-02-24 1993-07-13 Nkk Corporation Ion-plating method and apparatus therefor
EP0650159A1 (en) * 1993-10-20 1995-04-26 Matsushita Electric Industrial Co., Ltd. Manufacturing method of magnetic recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04191364A (en) * 1990-11-27 1992-07-09 Nkk Corp Method and device for ion plating
JPH04246168A (en) * 1991-01-28 1992-09-02 Japan Steel Works Ltd:The Method and apparatus for forming compound thin film
US5227203A (en) * 1992-02-24 1993-07-13 Nkk Corporation Ion-plating method and apparatus therefor
EP0650159A1 (en) * 1993-10-20 1995-04-26 Matsushita Electric Industrial Co., Ltd. Manufacturing method of magnetic recording medium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 512 (C - 0998) 22 October 1992 (1992-10-22) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 025 (C - 1017) 18 January 1993 (1993-01-18) *

Also Published As

Publication number Publication date
AU2003239759A1 (en) 2003-11-11
AU2003239759A8 (en) 2003-11-11
WO2003095698A2 (en) 2003-11-20

Similar Documents

Publication Publication Date Title
WO2005024094A3 (en) In-situ-etch-assisted hdp deposition using sif4 and hydrogen
US6627268B1 (en) Sequential ion, UV, and electron induced chemical vapor deposition
WO2007053607A3 (en) Pumping system for atomic layer deposition
WO2006091588A3 (en) Etching chamber with subchamber
WO2008089178A3 (en) Plasma source with liner for reducing metal contamination
TW200502888A (en) Manufacturing method of optoelectronic device, optoelectronic device, and electronic machine
TW200644085A (en) A plasma enhanced atomic layer deposition system having reduced contamination
WO2004034011A3 (en) Ionization source for mass spectrometry analysis
EP1170777A3 (en) Multi-purpose processing chamber with removable chamber liner
WO2004030020A3 (en) Upper electrode plate with deposition shield in a plasma processing system
TW201230428A (en) Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device
CA2411174A1 (en) A process and apparatus for plasma activated deposition in a vacuum
WO2006055459A3 (en) Tensile and compressive stressed materials for semiconductors
DE69942020D1 (en) PLASMA TREATMENT DEVICE
WO2008106542B1 (en) Apparatus and method for deposition over large area substrates
WO2012114856A1 (en) Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device
WO2001078101A3 (en) Method and apparatus for plasma processing
JP4773347B2 (en) Film forming apparatus and film forming method
WO2008086618A8 (en) Apparatus and method for cooling ions
WO2006002429A3 (en) Chamberless plasma deposition of coatings
US20210395876A1 (en) Erbium-Doped Bismuth Oxide Film
WO2003095698A3 (en) Device and method for the electron beam attenuation of reactively formed layers on substrates
WO2008146333A1 (en) Mass spectrometer
CN108103435A (en) Electrode plate and its surface treatment method
JP2017088916A (en) Film deposition apparatus using silicon raw material

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP