WO2003038879A3 - Methods and apparatus for plasma doping and ion implantation in an integrated processing system - Google Patents

Methods and apparatus for plasma doping and ion implantation in an integrated processing system Download PDF

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Publication number
WO2003038879A3
WO2003038879A3 PCT/US2002/033091 US0233091W WO03038879A3 WO 2003038879 A3 WO2003038879 A3 WO 2003038879A3 US 0233091 W US0233091 W US 0233091W WO 03038879 A3 WO03038879 A3 WO 03038879A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma doping
methods
processing system
ion implantation
integrated processing
Prior art date
Application number
PCT/US2002/033091
Other languages
French (fr)
Other versions
WO2003038879A2 (en
Inventor
Steven R Walther
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Priority to JP2003541037A priority Critical patent/JP4587364B2/en
Priority to KR1020047006166A priority patent/KR100876049B1/en
Priority to AT02784127T priority patent/ATE445226T1/en
Priority to EP02784127A priority patent/EP1438734B1/en
Priority to DE60233956T priority patent/DE60233956D1/en
Publication of WO2003038879A2 publication Critical patent/WO2003038879A2/en
Publication of WO2003038879A3 publication Critical patent/WO2003038879A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Abstract

Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.
PCT/US2002/033091 2001-10-26 2002-10-17 Methods and apparatus for plasma doping and ion implantation in an integrated processing system WO2003038879A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003541037A JP4587364B2 (en) 2001-10-26 2002-10-17 Method and apparatus for plasma doping and ion implantation in an integrated processing system
KR1020047006166A KR100876049B1 (en) 2001-10-26 2002-10-17 Methods and apparatus for plasma doping and ion implantation in integrated processing systems
AT02784127T ATE445226T1 (en) 2001-10-26 2002-10-17 METHOD AND DEVICE FOR PLASMA DOPPING AND ION IMPLANTATION IN AN INTEGRATED TREATMENT SYSTEM
EP02784127A EP1438734B1 (en) 2001-10-26 2002-10-17 Methods and apparatus for plasma doping and ion implantation in an integrated processing system
DE60233956T DE60233956D1 (en) 2001-10-26 2002-10-17 METHOD AND DEVICE FOR PLASMADOTING AND ION IMPLANTATION IN AN INTEGRATED TREATMENT SYSTEM

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/007,530 US6716727B2 (en) 2001-10-26 2001-10-26 Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US10/007,530 2001-10-26

Publications (2)

Publication Number Publication Date
WO2003038879A2 WO2003038879A2 (en) 2003-05-08
WO2003038879A3 true WO2003038879A3 (en) 2003-12-11

Family

ID=21726739

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/033091 WO2003038879A2 (en) 2001-10-26 2002-10-17 Methods and apparatus for plasma doping and ion implantation in an integrated processing system

Country Status (10)

Country Link
US (1) US6716727B2 (en)
EP (1) EP1438734B1 (en)
JP (1) JP4587364B2 (en)
KR (1) KR100876049B1 (en)
CN (1) CN100407363C (en)
AT (1) ATE445226T1 (en)
DE (1) DE60233956D1 (en)
ES (1) ES2333782T3 (en)
TW (1) TW582061B (en)
WO (1) WO2003038879A2 (en)

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Also Published As

Publication number Publication date
US6716727B2 (en) 2004-04-06
EP1438734B1 (en) 2009-10-07
KR100876049B1 (en) 2008-12-26
EP1438734A2 (en) 2004-07-21
CN100407363C (en) 2008-07-30
KR20040054745A (en) 2004-06-25
DE60233956D1 (en) 2009-11-19
TW582061B (en) 2004-04-01
WO2003038879A2 (en) 2003-05-08
ATE445226T1 (en) 2009-10-15
JP2005508088A (en) 2005-03-24
ES2333782T3 (en) 2010-03-01
JP4587364B2 (en) 2010-11-24
CN1592944A (en) 2005-03-09
US20030082891A1 (en) 2003-05-01

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