WO2003037503A1 - Microwave plasma generating apparatus - Google Patents
Microwave plasma generating apparatus Download PDFInfo
- Publication number
- WO2003037503A1 WO2003037503A1 PCT/JP2001/009497 JP0109497W WO03037503A1 WO 2003037503 A1 WO2003037503 A1 WO 2003037503A1 JP 0109497 W JP0109497 W JP 0109497W WO 03037503 A1 WO03037503 A1 WO 03037503A1
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- WIPO (PCT)
- Prior art keywords
- cavity
- microwave
- power
- microwave plasma
- filled
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the present invention relates to a microwave plasma generator. Background art
- the inside of the waveguide for diamond generation is evacuated and the necessary materials and gases are sealed.
- the gas used is the generation gas, it does not prevent discharge.
- a of a cavity made of an arbitrary-shaped metal material filled with an inert gas are provided with a low loss of high-frequency dielectric material on the inner wall side and a microphone mouth wave matching body filled with a dielectric material in a quartz case.
- a microphone tube reflector was installed on the inner wall side, a quartz tube was connected inside the cavity between the metal tubes connected to the side surfaces C and D of the cavity, and a waveguide horn was connected to the side A of the cavity. is there.
- FIGS. 1, 2 and 3 show plan views of a microwave plasma generator.
- side wall A of cavity 1 filled with nitrogen inert gas A quartz case 3 enclosing a powder or particle material made of titanium dioxide or tourmaline, which is a dielectric material with little high-frequency dielectric loss, is provided near the side.
- a reflector 4 is provided, and metal tubes 6 and 7 connected to a quartz tube 5 provided inside the cavity 1 are connected to side surfaces C and D of the cavity 1.
- the horn 2 A of the waveguide 2 is connected to the outer wall of the side surface A of the cavity 1.
- the microwave radiated from the horn 2A has a lens characteristic and the microwave has a beam characteristic as shown in Fig. 4, and the microwave reflector 4 provided on the inner wall of the side B of the cavity 1
- the microwave beam is radiated to the center of a quartz tube 5 provided inside the cavity 1. Therefore, the microwave beam power obtained by the microwave matching member 3 is radiated to the quartz tube 5 provided at the focal point of the microphone aperture reflector.
- the microwave radiation characteristic shown in FIG. 4 is a power diagram in which the microphone mouth wave is shaped into a beam by the microwave matching body 3 from the horn 2 A, and the microwave power of the center 0 from the microphone mouth wave matching body 3 is It shows about 5 dBi, and the microwave output power gradually decreases at intervals of 2, 4, and 6 cm to the left and right of the center point.
- the microphone mouth wave radiation characteristic 14 shown in Fig. 5 is a power diagram in which the microwave is beam-formed by the microphone mouth wave reflector 4, and the power of the microphone mouth wave at the center 0 of the microphone mouth wave is about 16 dB. i, which gradually attenuates at intervals of 3, 6, and 8 cm to the left and right of the center 0 point.
- the microwave power radiated from the horn 2A is concentrated at one point by the microwave matching member 3 and the microwave reflector 4, so that if necessary, a sufficient output can be obtained with a low power microphone mouth wave oscillator. Is obtained.
- the inside of the cavity 1 is not broken by the high-power microwave radiated from the horn 2A.
- the inside of the quartz tube 5 can be evacuated or various gases can be filled into the quartz tube 5.
- hazardous waste gas generated after waste treatment is sent into the British pipe 5 to decompose the hazardous waste gas using a microphone, and heat energy Harmful waste gas can be rendered harmless.
- FIG. 1 is a plan view of the present invention.
- FIG. 2 is a side view of the present invention.
- FIG. 3 is a perspective view of the present invention.
- FIG. 4 is a diagram showing a microphone mouth wave radiation characteristic of the microwave matching body.
- FIG. 5 is a diagram showing microwave radiation characteristics of the microwave reflector. Description of symbols 1 ⁇ Microwave reflector , ⁇ side C, D '"side Industrial applicability
- the desired microwave treatment can be performed in the quartz tube regardless of the microwave power and the microwave irradiation environment.
Abstract
A microwave plasma generating apparatus, wherein a microwave matching device (3) comprised of a quartz case packed with a dielectric material exhibiting a high frequency dielectric loss of a low value is provided at the interior of the side A of a cavity (1) having an arbitrary shape and filled with an inert gas, and a microwave reflector (4) is also provided at the interior of the side B of the cavity (1), and further a quartz tube (5) is provided in the cavity (1), being arranged between and connected to metal tubes (6) and (7) which are in turn connected to the sides C and D of the cavity (1), respectively.
Description
明細書 マイク口波プラズマ発生装置 技術分野 Description Microphone mouth-wave plasma generator Technical field
本発明は、 マイクロ波プラズマ発生装置に関する。 背景技術 The present invention relates to a microwave plasma generator. Background art
従来、 マイク口波プラズマ発生装置でのプラズマの発生は導波管の内部 で行われており、 このためにプラズマを利用する目的に応じて、 導波管の インピーダンスを整合する整合装置が必要になり、 また負荷として使用す る箇所の導波管の内部は真空状態なので、 大電力を必要とする場合は、 使 用する導波管部分の体 を大型にして導波管内の放電破壌を防止するが、 負荷に対するインピーダンスの整合が難しくなるので、 希望電力より少な い電力で実施せざるを得ない欠点がある。 特に、 マイクロ波プラズマでダ ィャモンド材を生成する電力は、 周波数が 2， 4 5 GH zでは、 マイクロ波 出力電力は 7 0 0 Wが限度の状態である。 Conventionally, generation of plasma in a microphone mouth-wave plasma generator has been performed inside the waveguide. Therefore, a matching device that matches the impedance of the waveguide is required according to the purpose of using the plasma. Also, since the inside of the waveguide used as a load is in a vacuum state, if large power is required, the body of the waveguide used should be made larger to reduce discharge blast in the waveguide. Prevention, however, has the drawback that the impedance must be reduced to less than the desired power because impedance matching to the load becomes difficult. In particular, the power to generate diamond material in a microwave plasma is limited to 700 W at a frequency of 2,45 GHz.
これは、 ダイヤモンド生成用の導波管内部を真空状態にし、 必要な素材 とガスを封入するが、 使用ガスは生成用ガスなので、 放電防止用にはなら ない。 In this method, the inside of the waveguide for diamond generation is evacuated and the necessary materials and gases are sealed. However, since the gas used is the generation gas, it does not prevent discharge.
したがって、 ダイヤモンドの生成は困難で、 2 cii以上の製作は無理である。 発明の開示 Therefore, it is difficult to produce diamond, and it is impossible to make diamonds of 2 cii or more. Disclosure of the invention
プラズマを発生するマイクロ波の出力電力を負荷の状態に関係なく大き く放射して、 目的の負荷に照射することである。 This means that the output power of microwaves that generate plasma is radiated largely regardless of the state of the load, and is applied to the target load.
不活性ガスを充填した任意形状の金属材からなるキヤビティの側面 Aの 内壁側に高周波誘電体損失の少なレ、誘電材を石英ケースに充填したマイク 口波整合体を設け、 キヤビティの側面 Bの内壁側にマイク口波反射板を設 け、 キヤビティの側面 C、 Dに接続した金属管の間に石英管をキヤビティ の内部に接続、 キヤビティの側面 Aに導波管のホーンを接続したことであ る。 Side walls A of a cavity made of an arbitrary-shaped metal material filled with an inert gas are provided with a low loss of high-frequency dielectric material on the inner wall side and a microphone mouth wave matching body filled with a dielectric material in a quartz case. A microphone tube reflector was installed on the inner wall side, a quartz tube was connected inside the cavity between the metal tubes connected to the side surfaces C and D of the cavity, and a waveguide horn was connected to the side A of the cavity. is there.
発明の実施の形態について図面を参照して説明する。 Embodiments of the present invention will be described with reference to the drawings.
図 1、 図 2及ぴ図 3は、 マイクロ波プラズマ発生装置の平面図を示す。 一例として窒素不活発性ガスを充填したキヤビティ 1の側面 Aの内壁
側近くに高周波誘電体損失の少ない誘電材である二酸化チタン材又は、 電 気石材からなる粉体、 粒子材を封入した石英ケース 3を設け、 同じキヤビ ティ 1の側面 Bの内面にマイク口波反射板 4を設け、 キヤビティ 1の側面 C、 Dにキヤビティ 1の内部に設けてある石英管 5に接続する金属材管 6， 7を接続してある。 FIGS. 1, 2 and 3 show plan views of a microwave plasma generator. As an example, side wall A of cavity 1 filled with nitrogen inert gas A quartz case 3 enclosing a powder or particle material made of titanium dioxide or tourmaline, which is a dielectric material with little high-frequency dielectric loss, is provided near the side. A reflector 4 is provided, and metal tubes 6 and 7 connected to a quartz tube 5 provided inside the cavity 1 are connected to side surfaces C and D of the cavity 1.
また、 キヤビティ 1の側面 Aの外壁には、 導波管 2のホーン 2 Aを接続 してある。 The horn 2 A of the waveguide 2 is connected to the outer wall of the side surface A of the cavity 1.
導波管 2のホーン 2 Aからマイクロ波が放射されると、 キヤビティ 1の 側面 Aの内壁近くに設けてある前記の高周波誘電体損失の少ない誘電体を 石英ケースに充填したマイク口波整合体 3により、 マイクロ波は図 4に示 す様にホーン 2 Aから放射されたマイクロ波はレンズ特性を示しマイクロ 波がビーム特性を持ち、 キヤビティ 1の側面 Bの内壁に設けたマイクロ波 反射板 4に補放射されて、 図 5に示すビーム特性になり、 このマイクロ波 ビームはキヤビティ 1の内部に設けてある石英管 5の中心部に放射される。 したがって、 マイクロ波整合体 3で得られたマイクロ波ビーム電力はマイ ク口波反射板の焦点に設けた石英管 5に放射されることになる。 When the microwave is radiated from the horn 2 A of the waveguide 2, the microphone mouth-wave matching body in which the above-described dielectric having a low high-frequency dielectric loss provided near the inner wall of the side A of the cavity 1 is filled in a quartz case. As shown in Fig. 4, the microwave radiated from the horn 2A has a lens characteristic and the microwave has a beam characteristic as shown in Fig. 4, and the microwave reflector 4 provided on the inner wall of the side B of the cavity 1 The microwave beam is radiated to the center of a quartz tube 5 provided inside the cavity 1. Therefore, the microwave beam power obtained by the microwave matching member 3 is radiated to the quartz tube 5 provided at the focal point of the microphone aperture reflector.
図 4に示すマイクロ波放射特性は、 ホーン 2 Aからのマイクロ波整合体 3によりマイク口波をビーム状にした電力図であり、 マイク口波整合体 3 からの中心部 0のマイクロ波電力は約 5 d B iを示し、 中心部ひ点の左右 2、 4、 6 c mの間隔でマイクロ波の出力電力は順次減衰していく。 The microwave radiation characteristic shown in FIG. 4 is a power diagram in which the microphone mouth wave is shaped into a beam by the microwave matching body 3 from the horn 2 A, and the microwave power of the center 0 from the microphone mouth wave matching body 3 is It shows about 5 dBi, and the microwave output power gradually decreases at intervals of 2, 4, and 6 cm to the left and right of the center point.
図 5に示すマイク口波放射特 14は、 マイク口波反射板 4によりマイクロ 波をビーム状にした電力図であり、 マイク口波の中心部 0のマイク口波の 電力は約 1 6 d B iであり、 中心部 0点の左右 3、 6、 8 c mの間隔で順 次減衰していく。 The microphone mouth wave radiation characteristic 14 shown in Fig. 5 is a power diagram in which the microwave is beam-formed by the microphone mouth wave reflector 4, and the power of the microphone mouth wave at the center 0 of the microphone mouth wave is about 16 dB. i, which gradually attenuates at intervals of 3, 6, and 8 cm to the left and right of the center 0 point.
したがって、 マイクロ波整合体 3とマイクロ波反射板 4とにより、 ホー ン 2 Aより放射されたマイクロ波電力は一点に集中されるので、 必要によ り小電力のマイク口波発振器で十分な出力が得られる。 Therefore, the microwave power radiated from the horn 2A is concentrated at one point by the microwave matching member 3 and the microwave reflector 4, so that if necessary, a sufficient output can be obtained with a low power microphone mouth wave oscillator. Is obtained.
また、 キヤビティ 1の内部に充填した不活発性ガスのために、 ホーン 2 Aから放射された大電力マイクロ波によるキヤビティ 1の内部が放電破壊 状態になることはない。 Also, due to the inert gas filled in the inside of the cavity 1, the inside of the cavity 1 is not broken by the high-power microwave radiated from the horn 2A.
石英管 5に接続してある金属管 6、 7を使用して、 石英管 5の内部を真 空状態にしたり、 各種のガスを石英管 5の内部に充填することが出来る。 また、 他の応用例として、 廃棄物の処理後に発生する有害廃棄ガスを石 英管 5の内部に送入してマイク口波で有害廃棄ガスを分解、 熱エネルギー
化にして有害廃棄ガスを無害化にすることが出来る。 図面の簡単な説明 Using the metal tubes 6 and 7 connected to the quartz tube 5, the inside of the quartz tube 5 can be evacuated or various gases can be filled into the quartz tube 5. As another application example, hazardous waste gas generated after waste treatment is sent into the British pipe 5 to decompose the hazardous waste gas using a microphone, and heat energy Harmful waste gas can be rendered harmless. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明の平面図である。 FIG. 1 is a plan view of the present invention.
図 2は、 本発明の側面図である。 FIG. 2 is a side view of the present invention.
図 3は、 本発明の斜視図である。 FIG. 3 is a perspective view of the present invention.
図 4は、 マイクロ波整合体のマイク口波放射特性を示す図である。 FIG. 4 is a diagram showing a microphone mouth wave radiation characteristic of the microwave matching body.
図 5は、 マイクロ波反射板のマイクロ波放射特性を示す図である。 符号の説明 1···キヤビティ 2···導波管 2Α···ホーン 3···マイ クロ波整合体 4···マイクロ波反射板 5…石英管 6、 7···金属管 Α、Β···側面 C、D'"側面 産業上の利用可能性 FIG. 5 is a diagram showing microwave radiation characteristics of the microwave reflector. Description of symbols 1 ························································································ Microwave reflector , Β side C, D '"side Industrial applicability
マイクロ波電力とマイクロ波の照射環境に関係無く、 希望のマイクロ波 処理を石英管内で実施することが出来る。 The desired microwave treatment can be performed in the quartz tube regardless of the microwave power and the microwave irradiation environment.
また、 マイクロ波をビーム状にすることにより、 小電力のマイクロ波発 振器で大電力のマイク口波電力を得ることが出来る。
In addition, by making the microwave into a beam, a large-power microwave power can be obtained with a low-power microwave oscillator.
Claims
請求の範囲 不活発性ガスを充填した任意形状の金属材からなるキヤビティ（ 1 )の側 面 (A)の内壁側に高周波誘電体損失の少ない誘電材を石英ケースに充填し たマイク口波整合体（3 )を設け、 側面 (B)の内壁側にマイク口波反射板 (4) を設け、 前記キヤビティ（1 )の側面 (C、D)に接続された金属管（6、 7)間に 石英管（5)を前記キヤビティ（1 )の内部に接続、 前記キヤビティ（1 )の側面 (A)の外面に導波管（2)のホーン（2 A)を接続してなるマイクロ波プラズマ
Claims Mic mouth wave matching in which a quartz case is filled with a dielectric material with low high-frequency dielectric loss on the inner wall side of the side surface (A) of the cavity (1) made of metal of arbitrary shape filled with inert gas A body (3) is provided, a microphone mouth wave reflector (4) is provided on the inner wall side of the side surface (B), and a metal tube (6, 7) connected to the side surface (C, D) of the cavity (1) is provided. A microwave plasma comprising a quartz tube (5) connected to the inside of the cavity (1), and a horn (2A) of the waveguide (2) connected to the outer surface of the side surface (A) of the cavity (1).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003539837A JPWO2003037503A1 (en) | 2001-10-30 | 2001-10-30 | Microwave plasma generator |
| PCT/JP2001/009497 WO2003037503A1 (en) | 2001-10-30 | 2001-10-30 | Microwave plasma generating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2001/009497 WO2003037503A1 (en) | 2001-10-30 | 2001-10-30 | Microwave plasma generating apparatus |
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| Publication Number | Publication Date |
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| WO2003037503A1 true WO2003037503A1 (en) | 2003-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2001/009497 WO2003037503A1 (en) | 2001-10-30 | 2001-10-30 | Microwave plasma generating apparatus |
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| JP (1) | JPWO2003037503A1 (en) |
| WO (1) | WO2003037503A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007018771A (en) * | 2005-07-05 | 2007-01-25 | Hideo Sugai | Plasma processing device and plasma processing method |
| CN112584599A (en) * | 2020-12-08 | 2021-03-30 | 四川大学 | Efficient microwave plasma torch |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63214346A (en) * | 1987-02-27 | 1988-09-07 | Sumitomo Metal Ind Ltd | Plasma processing apparatus |
| WO1992022085A1 (en) * | 1991-05-24 | 1992-12-10 | Lam Research Corporation | Window for microwave plasma processing device |
| US5902404A (en) * | 1997-03-04 | 1999-05-11 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
-
2001
- 2001-10-30 WO PCT/JP2001/009497 patent/WO2003037503A1/en active Application Filing
- 2001-10-30 JP JP2003539837A patent/JPWO2003037503A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63214346A (en) * | 1987-02-27 | 1988-09-07 | Sumitomo Metal Ind Ltd | Plasma processing apparatus |
| WO1992022085A1 (en) * | 1991-05-24 | 1992-12-10 | Lam Research Corporation | Window for microwave plasma processing device |
| US5902404A (en) * | 1997-03-04 | 1999-05-11 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007018771A (en) * | 2005-07-05 | 2007-01-25 | Hideo Sugai | Plasma processing device and plasma processing method |
| CN112584599A (en) * | 2020-12-08 | 2021-03-30 | 四川大学 | Efficient microwave plasma torch |
| CN112584599B (en) * | 2020-12-08 | 2021-09-17 | 四川大学 | Efficient microwave plasma torch |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2003037503A1 (en) | 2005-02-17 |
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