WO2003027686A3 - Method and apparatus for temperature control of a device during testing - Google Patents

Method and apparatus for temperature control of a device during testing Download PDF

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Publication number
WO2003027686A3
WO2003027686A3 PCT/US2002/013441 US0213441W WO03027686A3 WO 2003027686 A3 WO2003027686 A3 WO 2003027686A3 US 0213441 W US0213441 W US 0213441W WO 03027686 A3 WO03027686 A3 WO 03027686A3
Authority
WO
WIPO (PCT)
Prior art keywords
power level
temperature control
device during
during testing
thermal head
Prior art date
Application number
PCT/US2002/013441
Other languages
French (fr)
Other versions
WO2003027686A2 (en
Inventor
Maxat Touzelbaev
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to AU2002259063A priority Critical patent/AU2002259063A1/en
Publication of WO2003027686A2 publication Critical patent/WO2003027686A2/en
Publication of WO2003027686A3 publication Critical patent/WO2003027686A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0458—Details related to environmental aspects, e.g. temperature

Abstract

In the present method, a device under test (34) is maintained at a generally constant temperature. In furtherance thereof, a thermal head (30) is positioned adjacent the device (34), and a number of functional tests are run on the device (34), causing the power level of the device (34) to vary. The power level of the device (34) is monitored, and the power level of the thermal head (30) is varied so that the sum of the power level of the device under test (34) and the power level of the thermal head (30) remains generally constant.
PCT/US2002/013441 2001-09-27 2002-04-29 Method and apparatus for temperature control of a device during testing WO2003027686A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002259063A AU2002259063A1 (en) 2001-09-27 2002-04-29 Method and apparatus for temperature control of a device during testing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96517901A 2001-09-27 2001-09-27
US09/965,179 2001-09-27

Publications (2)

Publication Number Publication Date
WO2003027686A2 WO2003027686A2 (en) 2003-04-03
WO2003027686A3 true WO2003027686A3 (en) 2003-12-04

Family

ID=25509581

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/013441 WO2003027686A2 (en) 2001-09-27 2002-04-29 Method and apparatus for temperature control of a device during testing

Country Status (3)

Country Link
AU (1) AU2002259063A1 (en)
TW (1) TW564337B (en)
WO (1) WO2003027686A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794620B1 (en) * 2001-11-07 2004-09-21 Advanced Micro Devices, Inc. Feedforward temperature control of device under test
DE102005001163B3 (en) 2005-01-10 2006-05-18 Erich Reitinger Semiconductor wafers` testing method, involves testing wafer by probes, and reducing heating energy with constant cooling efficiency, under consideration of detected increase of temperature of fluids flowing via tempered chuck device
TWI564578B (en) * 2014-12-05 2017-01-01 上海兆芯集成電路有限公司 Test head module and reconditioning method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180959A (en) * 1985-09-23 1987-04-08 Sharetree Ltd Apparatus for the burn-in of integrated circuits
EP0837335A1 (en) * 1996-10-21 1998-04-22 Schlumberger Technologies, Inc. Method and apparatus for temperature control of a device during testing
US5911897A (en) * 1997-01-13 1999-06-15 Micro Control Company Temperature control for high power burn-in for integrated circuits
WO2000004396A1 (en) * 1998-07-14 2000-01-27 Schlumberger Technologies, Inc. Apparatus, method and system of liquid-based, wide range, fast response temperature cycling control of electronic devices
WO2003041125A2 (en) * 2001-11-07 2003-05-15 Advanced Micro Devices, Inc. Voltage programmable power dissipater

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180959A (en) * 1985-09-23 1987-04-08 Sharetree Ltd Apparatus for the burn-in of integrated circuits
EP0837335A1 (en) * 1996-10-21 1998-04-22 Schlumberger Technologies, Inc. Method and apparatus for temperature control of a device during testing
US5911897A (en) * 1997-01-13 1999-06-15 Micro Control Company Temperature control for high power burn-in for integrated circuits
WO2000004396A1 (en) * 1998-07-14 2000-01-27 Schlumberger Technologies, Inc. Apparatus, method and system of liquid-based, wide range, fast response temperature cycling control of electronic devices
WO2003041125A2 (en) * 2001-11-07 2003-05-15 Advanced Micro Devices, Inc. Voltage programmable power dissipater

Also Published As

Publication number Publication date
TW564337B (en) 2003-12-01
WO2003027686A2 (en) 2003-04-03
AU2002259063A1 (en) 2003-04-07

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