WO2003017340A3 - A method for concurrent fabrication of a double polysilicon bipolar transistor and a base polysilicon resistor - Google Patents

A method for concurrent fabrication of a double polysilicon bipolar transistor and a base polysilicon resistor Download PDF

Info

Publication number
WO2003017340A3
WO2003017340A3 PCT/IB2002/003279 IB0203279W WO03017340A3 WO 2003017340 A3 WO2003017340 A3 WO 2003017340A3 IB 0203279 W IB0203279 W IB 0203279W WO 03017340 A3 WO03017340 A3 WO 03017340A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
polysilicon
method
bipolar transistor
base
resistor
Prior art date
Application number
PCT/IB2002/003279
Other languages
French (fr)
Other versions
WO2003017340A2 (en )
Inventor
Richard Dondero
David M Szmyd
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • H01L29/66287Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248Combination of bipolar and field-effect technology
    • H01L21/8249Bipolar and MOS technology
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20Resistors

Abstract

A method for concurrently fabricating a double polysilicon bipolar transistor and a base polysilicon resistor. The method of the present invention constructs a polysilicon resistor in the base polysilicon layer of a salicided double polysilicon integrated circuit process. The overlying emitter polysilicon layer of the bipolar transistor is used to blocksilicidation of the resistor body base polysilicon.
PCT/IB2002/003279 2001-08-15 2002-08-12 A method for concurrent fabrication of a double polysilicon bipolar transistor and a base polysilicon resistor WO2003017340A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US93081901 true 2001-08-15 2001-08-15
US09/930,819 2001-08-15

Publications (2)

Publication Number Publication Date
WO2003017340A2 true WO2003017340A2 (en) 2003-02-27
WO2003017340A3 true true WO2003017340A3 (en) 2004-06-10

Family

ID=25459819

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/003279 WO2003017340A3 (en) 2001-08-15 2002-08-12 A method for concurrent fabrication of a double polysilicon bipolar transistor and a base polysilicon resistor

Country Status (1)

Country Link
WO (1) WO2003017340A3 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136874A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Manufacture of semiconductor device
GB2208965A (en) * 1987-08-19 1989-04-19 Tektronix Inc Bipolar/cmos integrated circuit
EP0518611A2 (en) * 1991-06-10 1992-12-16 Motorola, Inc. Method of fabricating a semiconductor structure having MOS and bipolar devices
JPH10173132A (en) * 1996-12-12 1998-06-26 Sony Corp Semiconductor device and its manufacture
JPH11233656A (en) * 1998-02-18 1999-08-27 Toshiba Corp Manufacture of semiconductor device
JPH11307645A (en) * 1998-04-17 1999-11-05 Nec Corp Semiconductor device and manufacture thereof
JPH11307646A (en) * 1998-04-24 1999-11-05 Toshiba Corp Semiconductor device and manufacture thereof
JP2000243860A (en) * 1999-02-23 2000-09-08 Hitachi Ltd Semiconductor device and its manufacture
US6156594A (en) * 1996-11-19 2000-12-05 Sgs-Thomson Microelectronics S.A. Fabrication of bipolar/CMOS integrated circuits and of a capacitor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136874A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Manufacture of semiconductor device
GB2208965A (en) * 1987-08-19 1989-04-19 Tektronix Inc Bipolar/cmos integrated circuit
EP0518611A2 (en) * 1991-06-10 1992-12-16 Motorola, Inc. Method of fabricating a semiconductor structure having MOS and bipolar devices
US6156594A (en) * 1996-11-19 2000-12-05 Sgs-Thomson Microelectronics S.A. Fabrication of bipolar/CMOS integrated circuits and of a capacitor
JPH10173132A (en) * 1996-12-12 1998-06-26 Sony Corp Semiconductor device and its manufacture
JPH11233656A (en) * 1998-02-18 1999-08-27 Toshiba Corp Manufacture of semiconductor device
JPH11307645A (en) * 1998-04-17 1999-11-05 Nec Corp Semiconductor device and manufacture thereof
JPH11307646A (en) * 1998-04-24 1999-11-05 Toshiba Corp Semiconductor device and manufacture thereof
JP2000243860A (en) * 1999-02-23 2000-09-08 Hitachi Ltd Semiconductor device and its manufacture

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 363 (E - 560) 26 November 1987 (1987-11-26) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 11 30 September 1998 (1998-09-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02 29 February 2000 (2000-02-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 12 3 January 2001 (2001-01-03) *

Also Published As

Publication number Publication date Type
WO2003017340A2 (en) 2003-02-27 application

Similar Documents

Publication Publication Date Title
US5793085A (en) Bipolar transistor compatible with CMOS processes
EP1233454A3 (en) Semiconductor memory device and method of manufacturing the same
JPH03185737A (en) Manufacture of semiconductor device
EP0905761A2 (en) Method of manufacturing a field effect transistor
US6724047B2 (en) Body contact silicon-on-insulator transistor and method
WO2006025609A3 (en) Thin film transistor and its manufacturing method
JPH03252166A (en) Mos field-effect transistor
JPS63131565A (en) Semiconductor device
JPH04286339A (en) Semiconductor device and manufacture thereof
WO2003019643A1 (en) Semiconductor device having high-permittivity insulation film and production method therefor
CN101197371A (en) Coupling capacitance structure and manufacturing method thereof
KR960030429A (en) A thin film transistor liquid crystal display device and a method of manufacturing the same
JPH0344077A (en) Manufacture of semiconductor device
JPS62291176A (en) Semiconductor device and manufacture thereof
JPS61222179A (en) Semiconductor device
US6110767A (en) Reversed MOS
US6372561B1 (en) Fabrication of fully depleted field effect transistor formed in SOI technology with a single implantation step
CN1734748A (en) Process for manufacturing 0.8 micron silicon bipolar CMOS integrated circuit
US6806136B1 (en) Method of forming a semiconductor device having a capacitor and a resistor
JPH04297063A (en) Manufacture of semiconductor device
CN1549330A (en) BiMOS digital-analog mixed integrated circuit with DP sink and producing method thereof
JPH02371A (en) Manufacture of semiconductor device
JPH0468565A (en) Semiconductor device and manufacture thereof
JPH04234173A (en) Protective diode of vertical type field effect transistor
JPS60170251A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR

Kind code of ref document: A2

Designated state(s): CN JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP