WO2003005396A2 - Method and apparatus for scanned instrument calibration - Google Patents

Method and apparatus for scanned instrument calibration Download PDF

Info

Publication number
WO2003005396A2
WO2003005396A2 PCT/US2002/020498 US0220498W WO03005396A2 WO 2003005396 A2 WO2003005396 A2 WO 2003005396A2 US 0220498 W US0220498 W US 0220498W WO 03005396 A2 WO03005396 A2 WO 03005396A2
Authority
WO
WIPO (PCT)
Prior art keywords
samples
specimen
determining
extent
calibration
Prior art date
Application number
PCT/US2002/020498
Other languages
French (fr)
Other versions
WO2003005396A9 (en
WO2003005396A3 (en
WO2003005396A8 (en
Inventor
Henri J. Lezec
Christian R. Musil
Original Assignee
Fei Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/055,320 external-priority patent/US6838380B2/en
Priority claimed from US10/186,206 external-priority patent/US6770867B2/en
Application filed by Fei Company filed Critical Fei Company
Priority to JP2003511269A priority Critical patent/JP3923468B2/en
Priority to EP02749692A priority patent/EP1428006B1/en
Priority to AU2002320188A priority patent/AU2002320188A1/en
Publication of WO2003005396A2 publication Critical patent/WO2003005396A2/en
Publication of WO2003005396A3 publication Critical patent/WO2003005396A3/en
Publication of WO2003005396A9 publication Critical patent/WO2003005396A9/en
Publication of WO2003005396A8 publication Critical patent/WO2003005396A8/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20Resistors
    • H01L28/24Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/047Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/282Determination of microscope properties
    • H01J2237/2826Calibration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30433System calibration
    • H01J2237/30438Registration
    • H01J2237/30444Calibration grids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31749Focused ion beam

Definitions

  • the present invention relates to the field of scanned beam microscopy, and in particular, to a method and apparatus for calibration of a scanned beam system.
  • FIB electron beam and focused ion beam
  • LMIS gallium liquid metal ion sources
  • example can provide five to seven nanometer lateral imaging resolution.
  • the beam of a scanning beam system typically scans the surface of a target specimen
  • This raster pattern may be used to produce an image of the surface of the
  • This output signal is then processed to produce an observable image displayed on a conventional video monitor.
  • a typical application of scanning beam systems is for analysis and treatment of integrated circuits (IC).
  • IC integrated circuits
  • a focused ion beam is used to produce an image of the circuit. This image is then used in conjunction with circuit layout information to navigate the ion
  • the beam can be scanned to the local area of interest, the beam current can be increased to cut into the circuit die and expose circuit features buried in layers.
  • the FIB system can then alter the exposed circuit by cutting conductive traces to break electrical connections or by depositing conductive material to provide new electrical connections. This etching or deposition is caused by a physical
  • the beam dwell time is the duration of time the beam dwells in a specific
  • the beam is typically controlled by digital electronics to scan across the specimen in a stepwise fashion from point to point, dwelling for a
  • dwells is referred to as the pixel spacing or pitch.
  • the dwell time is too short for a given beam current, insufficient collection of emissions occurs to accurately
  • a calibration specimen is prepared consisting of an
  • the calibration specimen is removed and the specimen to be analyzed or treated is placed in the plane
  • the pixel spacing is less than the beam spot size - typically defined as the beam
  • the present invention provides for accurate calibration of a scanned beam system that
  • calibration specimen comprising an array of targets is sampled with a sample spacing that is greater than the spacing between the targets and an image is reconstructed from the samples.
  • the present invention enables achievement of very sharp beam focus and highly
  • the invention is particularly well suited for use with automatic focusing and other automatic beam adjustments because it is very clear when the proper focus and other compensations are achieved.
  • Figure 1 shows schematically a typical focused ion beam system used in a preferred embodiment of the invention.
  • Figure 2 shows a one-dimensional periodic spatial response function: a sine-
  • Figure 3 shows a two-dimensional periodic spatial response function: a sine-
  • Figure 5 shows conventional sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds ⁇ P/40 in each direction.
  • Figure 10 shows conventional sampling of a one-dimensional periodic spatial
  • Figure 11 shows conventional sampling of a two-dimensional periodic spatial
  • Figure 12 shows conventional sampling of a one-dimensional periodic spatial
  • Figure 13 shows conventional sampling of a two-dimensional periodic spatial
  • Figure 14 shows aliased image sampling of a one-dimensional periodic spatial
  • Figure 15 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 16 shows aliased image sampling of a one-dimensional periodic spatial
  • Figure 17 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 18 shows a plot of relative variation in apparent magnification versus a normalized error in target periodicity.
  • Figure 19 shows a one-dimensional periodic spatial response function: a sawtooth
  • Figure 20 shows a two-dimensional periodic spatial response function: a sawtooth
  • Figure 21 shows aliased image sampling of a one-dimensional periodic spatial
  • Figure 22 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 23 shows aliased image sampling of a one-dimensional periodic spatial
  • Figure 24 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 25 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 26 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 27 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 28 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 29 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 33 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 34 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 35 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 36 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 37 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 38 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 39 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 40 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 42 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 43 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 44 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 45 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 48 shows aliased image sampling of a two-dimensional periodic spatial
  • Figure 49 shows conventional sampling of a two-dimensional periodic spatial
  • Figure 50 shows aliased image sampling of a two-dimensional periodic spatial
  • a calibration specimen is provided that comprises an array of calibration targets.
  • the calibration specimen is sampled with a sample spacing that is greater than the spacing of the targets in the array.
  • a composite image is formed
  • the calibration targets are preferably arranged into a two-dimensional array of targets with equally spaced rows and equally spaced columns.
  • the beam of the scanning beam system is scanned in a step- wise fashion to form a rectangular grid of sample points or pixels, one in each target. The horizontal distance between sample points in a
  • the sample taken from each target in a column is in a different vertical position within the target than the vertical position of the sample points within the other targets.
  • the samples from each target are assembled to form an image of the target shape that is used to achieve calibration of the beam.
  • the beam may be scanned
  • sampling patterns and target patterns may be used, so long as the relative positions of each sample point and target location are defined so that an image of the shape may be formed from the samples.
  • Formation of the reconstructed image shape may be performed continually by repeatedly
  • the positions of each sample within each target can be different for each different
  • present invention may also be employed in other scanned systems, such as electron beam systems including scanning electron microscopes and scanning transmission electron microscopes, and scanning probe microscopes, such as scanning tunneling microscopes and atomic force microscopes.
  • electron beam systems including scanning electron microscopes and scanning transmission electron microscopes
  • scanning probe microscopes such as scanning tunneling microscopes and atomic force microscopes.
  • a focused ion beam system 8 includes an evacuated envelope 10 having an upper neck portion 12 within which are located a liquid metal ion source 14 and a focusing
  • Ion beam 18 passes from source 14 through column 16 and between electrostatic deflection mechanism schematically indicated at 20 toward specimen 22, which comprises, for example, a semiconductor device positioned on movable X-Y stage 24 within lower chamber 26.
  • An ion pump 28 is employed for
  • the chamber 26 is evacuated with turbo-molecular and mechanical pumping system 30 under the control of vacuum controller 32.
  • the vacuum system provides within chamber 26 a vacuum of between approximately lxlO "7 Torr and 5X10 "4 Torr. If an etch- assisting or an etch-retarding gas is used, the chamber background pressure is typically about
  • High voltage power supply 34 is connected to liquid metal ion source 14 as well as to appropriate electrodes in focusing column 16 for forming an approximately 1 keV to 60 keV ion
  • Deflection controller and amplifier 36 operated in accordance with a prescribed pattern provided by pattern generator 38, is coupled to deflection plates 20 whereby beam 18 may be controlled' to trace out a corresponding pattern on the upper surface of specimen 22.
  • pattern generator 38 operated in accordance with a prescribed pattern provided by pattern generator 38, is coupled to deflection plates 20 whereby beam 18 may be controlled' to trace out a corresponding pattern on the upper surface of specimen 22.
  • the deflection plates are placed before the final lens, as
  • the source 14 typically provides a metal ion beam of gallium, although other ion sources, such as a multi-cusp or other plasma ion source, can be used.
  • the source typically is
  • a charged particle multiplier 40 used for detecting secondary ion or electron emission for imaging is connected to video circuit and amplifier 42, the latter supplying
  • charged particle multiplier 40 within chamber 26 can vary in different embodiments.
  • a preferred charged particle multiplier 40 can be coaxial with the ion beam and include a hole for allowing the ion beam to pass.
  • a fluid delivery system 46 optionally extends into lower chamber 26 for introducing
  • a door 60 is opened for inserting specimen 22 on stage 24 which may be heated or
  • the door is interlocked so that it cannot be opened
  • the high voltage power supply provides an appropriate acceleration voltage to electrodes in ion beam column 16 for energizing and focusing ion beam
  • Focused ion beam systems are commercially available, for example, from FEI Company, Hillsboro, Oregon, the assignee of the present application.
  • the beam converges in the plane of the specimen in a circle. However, if the
  • the beam may converge before or after the sample plane causing the
  • the beam may exhibit stigmatic effects.
  • the beam may exhibit stigmatic effects.
  • the beam may exhibit stigmatic effects.
  • the scan gain may be different in each of the orthogonal scan directions so that in one direction the image appears "stretched".
  • a scanned beam system must therefore be calibrated to eliminate or at least minimize these errors.
  • a scanned beam system will provide control elements to achieve calibration. For example, an electrostatic lens system is provided to cause the beam to converge at the correct focal point and a stigmator is provided to adjust for stigmation effects.
  • a calibration specimen is provided that contains a well
  • a typical calibration specimen may comprise a sequence of parallel lines etched into the specimen.
  • calibration specimen is scanned, charged particle multiplier 40 collects the emissions from each sample point, and an image is displayed on video monitor 44 by way of video circuit 42.
  • An operator viewing the image may adjust the voltages applied to the various control elements to focus the beam and adjust the beam for various aberrations.
  • the present invention provides for sampling a specimen containing an
  • the targets are preferably of substantially identical shape and size and are equally spaced in each of the two orthogonal axes in the plane of the specimen.
  • the spacing between each target is P x
  • the target spacing is P y .
  • the spacing between sample points in the x-direction is greater than the target
  • the sample points are widely spaced apart a finely detailed image can be formed without the rapid degradation of the specimen associated with dense sampling of the specimen.
  • dwell times and slower scans can be employed without degrading the specimen, resulting in a high signal-to-noise ratio. This in turn results in an image of high contrast with respect to the background. Further, because the sample points forming the image are distributed over a much
  • the method of the present invention can be better understood by modeling the one- dimensional spatial response of a specimen of an array of targets to a scanned beam microscope
  • the scanned beam will sample the specimen with a sample pitch, ds,
  • the beam samples the specimen with a finite number of samples, N, where in a typical system N
  • F is 256, 512, or 1024.
  • the field of view, F is given by F - (N - ⁇ )ds .
  • P 1 ⁇ m
  • N samples taken of the specimen are mapped to an identical number of pixels in the display of video monitor 44.
  • a gray scale is used to show the intensity of the signal received
  • dp the sampling pitch
  • magnification, M can be doubled, reducing the field of view, F, by one-half.
  • sample pitch is greater than the target periodicity, P, but less than IP, so that the beam scans the specimen with one and only one sample per target. This is accomplished by choosing as the sampling pitch, ds :
  • n is an integer normally chosen equal to 1 , and assumed to be equal to 1 herein unless
  • the length of the displayed image, L is the same as the length of the displayed image
  • Figures 10 and 11 show the one- and two-dimensional results of scanning an image that has the
  • the one dimensional distribution can be described functionally as:
  • ⁇ P The difference between actual and expected periodicity, ⁇ P can be determined by counting the number of reconstructed periods displayed.
  • aliased imaging technique of the present invention one complete period of the image is reconstructed from a number of samples,
  • P A is the actual periodicity of the target function
  • P E is the expected periodicity
  • N - L ' ⁇ ( ⁇ P)
  • Ns is the total number of samples acquired by the beam in one sweep across a dimension of the specimen.
  • E denotes that this is the number of displayed periods that are expected.
  • N p (AP) 20 , where the superscript, O, denotes that this is the number of periods actually
  • the error in this approximation is 0.003 ⁇ m or less than 3% of the actual periodicity, P A .
  • ⁇ ° (AP) becomes arbitrarily small, or equivalently, until the approximate value, ⁇ ° ( ⁇ P) ,
  • the aliased imaging technique can be employed to determine with high accuracy the periodicity of a reference sample.
  • This reference sample can be
  • Figure 30 is produced. Note that the small angular rotation of the specimen is scarcely discernable, rendering precise rotational alignment highly difficult.
  • ⁇ for the present example is 5.5 degrees, which corresponds well with the rotation observed in
  • n is increased to two, while the other parameters of the example above are kept
  • periodicity of the specimen can be determined with high precision.
  • the present invention can also be advantageously employed to detect and correct for non-orthogonal conditions arising from non-orthogonality of the target pattern of the specimen,
  • a non-orthogonal condition can be expressed in
  • the present invention may also be advantageously employed to detect and correct for anisotropic conditions arising from differences in scale factors in the x and y directions, whether arising from the condition of the specimen or lack of correct beam calibration.
  • anisotropic conditions arising from differences in scale factors in the x and y directions, whether arising from the condition of the specimen or lack of correct beam calibration.
  • the method of aliased image scanning may be employed to achieve very fine
  • sampling pitch In conventional imaging, the sampling pitch must be very small compared to the target features to be resolved. This restriction is removed without loss of resolution in aliased image scanning where a sample pitch greater than the periodicity of the targets in an array is used.
  • Formation of the image shape may be performed continually by repeatedly sampling the array of targets and displaying the samples obtained ' by each complete scan of the specimen. This allows the operator to make adjustments while visualizing the effect of his or her adjustments.
  • each sample within each target can be different for each different complete scan of the calibration specimen so that the same point within a target is not sampled more than once in any set of
  • the targets are preferably of substantially
  • an aliased image calibration specimen comprising an array of targets for calibration of a scanned beam system as described above may be etched or deposited on a
  • the methods may be employed to increase the accuracy and reliability of
  • the invention achieves multiple objectives, such as reducing calibration specimen damage and improving calibration sensitivity. Because the invention can be used in different applications for

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Methods and apparatus for calibration of a scanned beam system (8) are provided by sampling a calibration specimen (22) containing an array of targets with a spacing between samples that is greater than the spacing between targets in an array and forming an image from the samples to reduce calibration specimen degradation and to magnify calibration errors to enable very fine calibration of the scanned beam system (8).

Description

METHOD AND APPARATUS FOR SCANNED INSTRUMENT CALIBRATION
Technical Field of the Invention
[1000] The present invention relates to the field of scanned beam microscopy, and in particular, to a method and apparatus for calibration of a scanned beam system.
Background of the Invention
[1001 ] Scanned beam microscopy systems, including charged particle beam systems such as
electron beam and focused ion beam (FIB) systems, are widely used in characterization or treatment of materials on a microscopic scale. For example, focused ion beam systems are used in manufacturing operations because of their ability to image, etch, mill, deposit and analyze with great precision. Ion columns in FIB systems using gallium liquid metal ion sources (LMIS), for
example, can provide five to seven nanometer lateral imaging resolution.
[1002] The beam of a scanning beam system typically scans the surface of a target specimen
in a raster pattern. This raster pattern may be used to produce an image of the surface of the
target. When the scanned beam strikes the target, particles or photons are emitted from the immediate vicinity of beam impact. A portion of these emissions are measured or collected using a suitable detector or collector that produces an output signal indicative of the intensity of the
emission. This output signal is then processed to produce an observable image displayed on a conventional video monitor.
[1003] A typical application of scanning beam systems is for analysis and treatment of integrated circuits (IC). In this application, a focused ion beam is used to produce an image of the circuit. This image is then used in conjunction with circuit layout information to navigate the ion
beam over the surface of the circuit to locate a specific element or feature of interest. When the beam is scanned to the local area of interest, the beam current can be increased to cut into the circuit die and expose circuit features buried in layers. The FIB system can then alter the exposed circuit by cutting conductive traces to break electrical connections or by depositing conductive material to provide new electrical connections. This etching or deposition is caused by a physical
or chemical reaction of the beam ions with the specimen and occurs at a rate that is largely
dependent upon the constituent ions of the beam, the presence and type of etch enhancing or deposition precursor gases, and the beam current.
[1004] Also important in achieving accurate characterization and treatment of a specimen is
the beam dwell time. The beam dwell time is the duration of time the beam dwells in a specific
location on the specimen. In a scanned beam system, the beam is typically controlled by digital electronics to scan across the specimen in a stepwise fashion from point to point, dwelling for a
pre-determined time at each point. The distance between the sample points at which the beam
dwells is referred to as the pixel spacing or pitch. When imaging the surface, if the dwell time is too short for a given beam current, insufficient collection of emissions occurs to accurately
characterize the surface at the dwell point. When this occurs, the displayed image will appear "noisy" because of a low signal-to-noise ratio.
[1005] A focused ion beam, even at relatively low energy, will always cause some destructive
etching of the specimen surface. Even an electron beam can alter the specimen, for example,
through electron-beam induced chemical reactions that cause hydrocarbons residual in the
vacuum chamber to stain the sample surface. Because a charged particle beam will invariably
cause changes in the specimen surface, a long dwell time will alter the surface, thereby decreasing the accuracy of the surface characterization. Thus, careful control of the beam intensity and dwell time at each point in the scan is required.
[1006] Further, the beam must be accurately focused and compensated for aberrations to
provide a useful image of the specimen surface for visual or automated analysis. In a conventional method for focusing the beam, a calibration specimen is prepared consisting of an
etched region or region of deposited material to form a target of well-defined shape upon which to focus the beam. When the beam is properly focused, the target shape will appear on a visual display in high contrast to the surrounding specimen surface. Once accurate focus is achieved, the calibration specimen is removed and the specimen to be analyzed or treated is placed in the plane
of focus.
[1007] Unfortunately, to obtain a finely detailed image of the calibration specimen suitable for achieving sharp focus and precise calibration, many closely spaced samples of the target must
be taken. When the pixel spacing is less than the beam spot size - typically defined as the beam
diameter for which the beam drops to one-tenth of its maximum value - the problem of specimen degradation is exacerbated by the resultant high ion dose at each sample point. This degradation occurs at a rate that is sufficiently high to interfere with beam calibration. Conversely, if the beam
current or dwell time is reduced to avoid this, then the signal-to-noise ratio decreases, resulting in
a poor image of the calibration specimen that is unsuitable for achieving sharp focus and precise beam calibration. Further, using conventional scanning methods, fine calibration to remove small
errors is difficult to achieve.
[1008] Thus, there is a need for methods and systems to achieve accurate scanned beam system calibration that overcome these and other limitations of the prior art.
Summary of the Invention
[1009] The present invention provides for accurate calibration of a scanned beam system that
overcomes limitations of the prior art. According to the methods of the present invention, a
calibration specimen comprising an array of targets is sampled with a sample spacing that is greater than the spacing between the targets and an image is reconstructed from the samples.
[1010] The present invention enables achievement of very sharp beam focus and highly
precise calibration without substantial degradation of the calibration specimen caused by closely spaced sampling. Slower scan speeds may be employed which provide an image of high contrast because of improved signal-to-noise ratio. Because the reconstructed image is composed of points spread at relatively large distances across the calibration specimen, beam aberrations and alignment errors are magnified and can be more readily corrected than when prior art calibration
techniques are employed.
[1011] Application of the aliased image scanning technique of the present invention will magnify the effect of rotational misalignment of the calibration specimen with respect to the scan axes of the beam, enabling easier detection and correction of rotational misalignment. Also, conditions giving rise to a non-orthogonal relationship between the x-y axes of the image
produced by the system are also magnified and can therefore be more easily detected and
corrected. Further, beam stigmation effects are magnified for easier detection and correction. The invention is particularly well suited for use with automatic focusing and other automatic beam adjustments because it is very clear when the proper focus and other compensations are achieved.
[1012] The foregoing has rather broadly outlined features and technical advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter. It
should be appreciated by those skilled in the art that the conception and specific embodiment
disclosed herein may be readily utilized as a basis for modifying or designing other structures for
carrying out many useful purposes of the present invention. It should also be realized by those
skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims.
Brief Description of the Drawings
[1013] For a more complete understanding of the present invention, and the advantages
thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
[1014] Figure 1 shows schematically a typical focused ion beam system used in a preferred embodiment of the invention. [1015] Figure 2 shows a one-dimensional periodic spatial response function: a sine-
squared function with a period, P, of 1 micro-meter (μm).
[1016] Figure 3 shows a two-dimensional periodic spatial response function: a sine-
squared function of x and y with a period, P, of lμm in each direction. [1017] Figure 4 shows conventional sampling of a one-dimensional periodic spatial response function with a sampling pitch of ds=P/40.
[1018] Figure 5 shows conventional sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds^P/40 in each direction. [1019] Figure 6 shows conventional sampling of a one-dimensional periodic spatial response function with a sampling pitch of ds=P/80.
[1020] Figure 7 shows conventional sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds=P/80 in each direction.
[1021] Figure 8 shows aliased image sampling of a one-dimensional periodic spatial response function with a sampling pitch of ds'=P+P/80.
[1022] Figure 9 shows aliased image sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds'=P+P/80 in each direction.
[1023] Figure 10 shows conventional sampling of a one-dimensional periodic spatial
response function with a sample pitch of ds=lμm/80: the period of the spatial response
function is 1 μm.
[1024] Figure 11 shows conventional sampling of a two-dimensional periodic spatial
response function with a sample pitch of ds=lμm/80 in each direction: the period of the
spatial response function is lμm in each direction. [1025] Figure 12 shows conventional sampling of a one-dimensional periodic spatial
response function with a sample pitch of ds=l μm/80: the period of the spatial response
function is l.Olμm.
[1026] Figure 13 shows conventional sampling of a two-dimensional periodic spatial
response function with a sample pitch of ds=l μm/80 in each direction: the period of the
spatial response function is 1.Olμm in each direction.
[1027] Figure 14 shows aliased image sampling of a one-dimensional periodic spatial
response function with a sample pitch of ds'=lμm +1 μm/80: the period of the spatial
response function is lμm.
[1028] Figure 15 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sample pitch of ds'=lμm +1 μm/80 in each direction: the period of the
spatial response function is lμm in each direction.
[1029] Figure 16 shows aliased image sampling of a one-dimensional periodic spatial
response function with a sample pitch of ds'=lμm +1 μm/80: the period of the spatial
response function is l.Olμm.
[1030] Figure 17 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sample pitch of ds'=lμm +1 μm/80 in each direction: the period of the
spatial response function is l.Olμm in each direction.
[1031] Figure 18 shows a plot of relative variation in apparent magnification versus a normalized error in target periodicity.
[1032] Figure 19 shows a one-dimensional periodic spatial response function: a sawtooth
function with a period, P, of lμm.
[1033] Figure 20 shows a two-dimensional periodic spatial response function: a sawtooth
function of x and y with a period, P, of 1 μm in each direction. [1034] Figure 21 shows aliased image sampling of a one-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/40 and ΔP/ds =0.8.
[1035] Figure 22 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/40 and ΔP/ds =0.8 in each direction. [1036] Figure 23 shows aliased image sampling of a one-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/40 and ΔP/ds =1.2.
[1037] Figure 24 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/40 and ΔP/ds =1.2 in each direction.
[1038] Figure 25 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/10 and ΔP/P =0 in each direction.
[1039] Figure 26 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/10 and ΔP/P =1/50 in each direction.
[1040] Figure 27 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/10 and ΔP/P =1/15 in each direction.
[1041] Figure 28 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/10 and ΔP/P =1/12 in each direction.
[1042] Figure 29 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+P/10 and ΔP/P =1/11 in each direction.
[1043] Figure 30 shows conventional sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds=P/l 0 in each direction: the axes of the function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1044] Figure 31 shows aliased image sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds'=P+P/10 in each direction: the axes of the function are rotated with respect to the scan axes by an angle of 0.5 degrees. [1045] Figure 32 shows aliased image sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds'=2P+P/10 in each direction: the axes of the function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1046] Figure 33 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=l .1 μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1047] Figure 34 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=l .05μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1048] Figure 35 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=l .03μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1049] Figure 36 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=l .01 μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1050] Figure 37 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=1.002μm in each direction: the axes of the
function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1051] Figure 38 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=1.001μm in each direction: the axes of the
function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1052] Figure 39 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=l .Oμm in each direction: the axes of the function are rotated with respect to the scan axes by an angle of 0.5 degrees. [1053] Figure 40 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=0.999μm in each direction: the axes of the
function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1054] Figure 41 shows aliased image sampling of a two-dimensional periodic spatial response function with a sampling pitch of ds'=0.998μm in each direction: the axes of the
function are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1055] Figure 42 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=0.99μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1056] Figure 43 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=0.97μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1057] Figure 44 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=0.95μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1058] Figure 45 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=0.90μm in each direction: the axes of the function
are rotated with respect to the scan axes by an angle of 0.5 degrees.
[1059] Figure 46 shows conventional sampling of a two-dimensional periodic spatial response function with a sample pitch of ds=P/10: the x-axis of the function is rotated with respect to the x-axis of the scan by an angle of 0.5 degrees.
[1060] Figure 47 shows aliased image sampling of a two-dimensional periodic spatial response function with a sample pitch of ds'=P+P/10: the x-axis of the function is rotated with respect to the x-axis of the scan by an angle of 0.5 degrees. [1061] Figure 48 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sample pitch of ds'=2P+P/l 0: the x-axis of the function is rotated with
respect to the x-axis of the scan by an angle of 0.5 degrees.
[1062] Figure 49 shows conventional sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds=0.06μm: the x-axis of the function is scaled
with respect to the x-axis of the scan by a factor of 1.05.
[1063] Figure 50 shows aliased image sampling of a two-dimensional periodic spatial
response function with a sampling pitch of ds'=P+0.06μm: the x-axis of the function is scaled with respect to the x-axis of the scan by a factor of 1.05.
Detailed Description of the Preferred Embodiments
[1064] In a preferred embodiment of the invention, a calibration specimen is provided that comprises an array of calibration targets. The calibration specimen is sampled with a sample spacing that is greater than the spacing of the targets in the array. A composite image is formed
from these samples and displayed.
[ 1065] According to the present invention the calibration targets are preferably arranged into a two-dimensional array of targets with equally spaced rows and equally spaced columns. The beam of the scanning beam system is scanned in a step- wise fashion to form a rectangular grid of sample points or pixels, one in each target. The horizontal distance between sample points in a
row of targets is slightly greater than the horizontal spacing of the targets in the row. Thus, the
sample taken from each target in a row is in a different horizontal position within the target than the horizontal position of the sample points within the other targets. Similarly, the vertical
distance between each row of samples in a column of targets is slightly greater than the vertical
spacing of the targets in the column. Thus the sample taken from each target in a column is in a different vertical position within the target than the vertical position of the sample points within the other targets. The samples from each target are assembled to form an image of the target shape that is used to achieve calibration of the beam.
[1066] To obtain a reconstructed image of the target samples, the beam may be scanned
across each row successively or, alternatively, down each column successively. Other sampling patterns and target patterns may be used, so long as the relative positions of each sample point and target location are defined so that an image of the shape may be formed from the samples.
Formation of the reconstructed image shape may be performed continually by repeatedly
sampling the array of targets and displaying the sample points obtained by each complete scan of
the specimen. This allows the operator to calibrate the system while visually monitoring the effect of his or her adjustments. Since the samples taken during a complete scan of the calibration
specimen according to the methods of the present invention are widely spaced - much greater
than the beam spot size - the cumulative particle dose at any point on the sample is greatly reduced, with a consequent reduction in specimen surface damage. Moreover, with suitable processing, the positions of each sample within each target can be different for each different
complete scan of the calibration specimen so that the same point within a target is not sampled more than once in any set of complete scans of the array.
[1067] The present invention will be discussed in the context of use in a focused ion beam
system for demonstrative purposes. However, it will be understood that the methods of the
present invention may also be employed in other scanned systems, such as electron beam systems including scanning electron microscopes and scanning transmission electron microscopes, and scanning probe microscopes, such as scanning tunneling microscopes and atomic force microscopes.
[1068] In FIG. 1 , a focused ion beam system 8 includes an evacuated envelope 10 having an upper neck portion 12 within which are located a liquid metal ion source 14 and a focusing
column 16 including extractor electrodes and an electrostatic optical system. Ion beam 18 passes from source 14 through column 16 and between electrostatic deflection mechanism schematically indicated at 20 toward specimen 22, which comprises, for example, a semiconductor device positioned on movable X-Y stage 24 within lower chamber 26. An ion pump 28 is employed for
evacuating neck portion 12. The chamber 26 is evacuated with turbo-molecular and mechanical pumping system 30 under the control of vacuum controller 32. The vacuum system provides within chamber 26 a vacuum of between approximately lxlO"7 Torr and 5X10"4 Torr. If an etch- assisting or an etch-retarding gas is used, the chamber background pressure is typically about
lxlO"5 Torr.
[1069] High voltage power supply 34 is connected to liquid metal ion source 14 as well as to appropriate electrodes in focusing column 16 for forming an approximately 1 keV to 60 keV ion
beam 18 and directing the same downwardly. Deflection controller and amplifier 36, operated in accordance with a prescribed pattern provided by pattern generator 38, is coupled to deflection plates 20 whereby beam 18 may be controlled' to trace out a corresponding pattern on the upper surface of specimen 22. In some systems the deflection plates are placed before the final lens, as
is well known in the art.
[1070] The source 14 typically provides a metal ion beam of gallium, although other ion sources, such as a multi-cusp or other plasma ion source, can be used. The source typically is
capable of being focused into a sub-one-tenth micron wide beam at specimen 22 for either
modifying the surface 22 by ion milling, enhanced etch, material deposition, or for the purpose of imaging the surface 22. A charged particle multiplier 40 used for detecting secondary ion or electron emission for imaging is connected to video circuit and amplifier 42, the latter supplying
drive for video monitor 44 also receiving deflection signals from controller 36. The location of
charged particle multiplier 40 within chamber 26 can vary in different embodiments. For example, a preferred charged particle multiplier 40 can be coaxial with the ion beam and include a hole for allowing the ion beam to pass. A scanning electron microscope 41, along with its
power supply and controls 45, are optionally provided with the FIB system 8.
[1071] A fluid delivery system 46 optionally extends into lower chamber 26 for introducing
and directing a gaseous vapor toward sample 22. U.S. Pat. No. 5,851,413 to Casella et al. for "Gas Delivery Systems For Particle Beam Processing," assigned to the assignee of the present invention, describes a suitable fluid delivery system 46.
[1072] A door 60 is opened for inserting specimen 22 on stage 24 which may be heated or
cooled, and also for servicing the reservoir 50. The door is interlocked so that it cannot be opened
if the system is under vacuum. The high voltage power supply provides an appropriate acceleration voltage to electrodes in ion beam column 16 for energizing and focusing ion beam
18. When it strikes specimen 22, material is sputtered, that is physically ejected, from the sample.
Focused ion beam systems are commercially available, for example, from FEI Company, Hillsboro, Oregon, the assignee of the present application.
[1073] Signals applied to deflection controller and amplifier 36 cause the focused ion beam
to move within a target area to be imaged or milled according to a pattern controlled by pattern generator 38. Ideally, the beam converges in the plane of the specimen in a circle. However, if the
system is not calibrated, the beam may converge before or after the sample plane causing the
image to be unfocussed. Also, the beam may exhibit stigmatic effects. For example, the beam
may be more elliptical than circular. Moreover, there may be rotational misalignment between the
axes of the specimen and the scan axes of the beam. Or there may exist a non-orthogonal relationship between the beam axes. Further, the scan gain may be different in each of the orthogonal scan directions so that in one direction the image appears "stretched". The scanned
beam system must therefore be calibrated to eliminate or at least minimize these errors. Typically, a scanned beam system will provide control elements to achieve calibration. For example, an electrostatic lens system is provided to cause the beam to converge at the correct focal point and a stigmator is provided to adjust for stigmation effects.
[1074] To calibrate the system, a calibration specimen is provided that contains a well
defined target or pattern formed of etched or deposited regions of the specimen to create an image of high visual contrast to the surrounding specimen surface. For example, a typical calibration specimen may comprise a sequence of parallel lines etched into the specimen. When the
calibration specimen is scanned, charged particle multiplier 40 collects the emissions from each sample point, and an image is displayed on video monitor 44 by way of video circuit 42. An operator viewing the image may adjust the voltages applied to the various control elements to focus the beam and adjust the beam for various aberrations.
[1075] In the conventional method of scanning, a detailed image of the specimen is obtained
by densely sampling the specimen with many closely spaced sample points. If the sampling
density is so great that the pixel spacing is less than the beam spot size there exists overlap of the beam energy at adjacent pixels. This increases the rate at which the surface of the specimen is degraded by the interaction of the beam and the surface. A high rate of degradation decreases the
time available for the operator of the scanned beam system to achieve calibration. Further, as will be explained in more detail subsequently, small calibration errors are difficult to detect from
analysis of the image formed by the conventional scanning method, making fine calibration very
difficult to achieve.
[1076] • In contrast to the conventional method of scanning the calibration specimen using a high sampling density, the present invention provides for sampling a specimen containing an
array of targets etched or deposited thereon with spacing between samples that is greater than the spacing between targets in the array. The targets are preferably of substantially identical shape and size and are equally spaced in each of the two orthogonal axes in the plane of the specimen. Thus, along the x-axis, the spacing between each target is Px, and along the y-axis the target spacing is Py. The spacing between sample points in the x-direction is greater than the target
spacing in the x-direction. Thus, the x-directed spacing between samples is nPx + dx where n is
an integer and dx « Px . Similarly, the spacing between sample points in the y-direction is greater
than the target spacing in the y-direction. Thus, the y-directed spacing between samples is
mPy + dy where m is an integer and dy « Py .
[1077] By sampling the array of targets in this way, each target is sampled at a different point
there within. These samples are then assembled to construct an image of the specimen. Because
the sample points are widely spaced apart a finely detailed image can be formed without the rapid degradation of the specimen associated with dense sampling of the specimen. Thus, the
calibration specimen will remain stable for a much greater period of time. Moreover, longer
dwell times and slower scans can be employed without degrading the specimen, resulting in a high signal-to-noise ratio. This in turn results in an image of high contrast with respect to the background. Further, because the sample points forming the image are distributed over a much
larger field of view, an image that is a more sensitive function of beam focus, stigmation, and
alignment is obtained, thus enabling the operator to achieve a very fine calibration of the system.
[1078] The method of the present invention can be better understood by modeling the one- dimensional spatial response of a specimen of an array of targets to a scanned beam microscope
as a periodic function,/ of period P. In the case of a scanning electron microscope (SEM) or a focused ion beam system (FIB), for example, /might describe a relative secondary-electron emission intensity signal at each sample point of the specimen in response to the beam. In the
case of a scanned laser microscope, for example, / might be proportional to the relative reflectivity of the specimen at each sample point. Let /be written as follows:
f(x,P) = sin2(πx/P) The corresponding two-dimensional spatial response function of the two-dimensional array of targets is given by:
f(x,y,Px,Py) = sm2(πx/Px)sm2(πy/Py)
For clarity of exposition, let Px~Py-P=\ micro-meter (1 μm), understanding that the invention is not limited to equal periods in the x and y directions. Plots of /( x, P) and f(x, y, P) are shown
in Figures 2 and 3.
[1079] Conventionally, the scanned beam will sample the specimen with a sample pitch, ds,
that is small compared to the target periodicity, P, to provide a fine image of the targets in the
specimen. Suppose, for example, that ds = PIQ, where Q is the number of samples per period.
The beam samples the specimen with a finite number of samples, N, where in a typical system N
is 256, 512, or 1024. The field of view, F, is given by F - (N - \)ds . For example, with P= 1 μm,
N=256 and ζ?=40, the field of view of the specimen is E=6.375μm.
[1080] The N samples taken of the specimen are mapped to an identical number of pixels in the display of video monitor 44. A gray scale is used to show the intensity of the signal received
at each sample point. When plotted as a function of pixel number along the scanned axis of the specimen, the graph of intensity appears as in Figure 4. The corresponding 2-dimensional image
is shown in Figure 5 with equal pitch, ds, and period, P, in both the x and y directions. The pitch
of the display pixels, dp, will be different from the sampling pitch, ds. For example, if dp =
300μm, the length, L, of the image of the specimen displayed on the screen is
L = (N - \)dp = 76,500//w for 7V=256. The linear magnification, M, of the system is given by
M = L/ F = y, = 12000. By reducing the sampling pitch by one-half, for example, the
magnification, M, can be doubled, reducing the field of view, F, by one-half.
[1081] Consider the images shown in Figures 6 and 7 which are obtained using a conventional sampling pitch of ds = /80 with P = lμm. As can be seen, the dense sampling results in a finely detailed image of the targets of the specimen. However, dense sampling also results in target degradation due to the closeness of the samples, as previously discussed. The
present invention provides a sampling method that avoids these limitations of the prior art. In a
preferred embodiment the sample pitch is greater than the target periodicity, P, but less than IP, so that the beam scans the specimen with one and only one sample per target. This is accomplished by choosing as the sampling pitch, ds :
ds = nP + ds
where n is an integer normally chosen equal to 1 , and assumed to be equal to 1 herein unless
otherwise noted.
[1082] For example, let 7>=lμm and ds=PI 0. Then ds =1.0125μm. Once again choosing
N=256, the field of view, F , is equal to (N-l)<is =258.188μm. Thus, the sampling pitch, ds ',
yields a field of view, F that is substantially larger than the field of view, F, that is obtained with a sampling pitch of ds. The linear sampling point density has decreased by a factor of
ds'/ds = 81.1n two dimensions, the reduction in sampling point area density is
(ds /ds)2 - 6561. The resultant image is shown in Figures 8 and 9. Note that identical images are
obtained whether the sampling point density, ds, or the sampling point density, ds '=P+ds, is used. This, is seen by comparison of Figures 6 and 7 and Figures 8 and 9.
[1083] The length of the displayed image, L , is the same as the length of the displayed image
obtained from the conventional method of sampling with pitch, ds. That is, L '=L. Note however, that the magnification, M'=L '/F', of the aliased, scanned image is much lower than the magnification obtained from sampling the image in the conventional manner, since the field of
view obtained from the larger sampling pitch is much greater. However, the apparent magnification, MA, is the same as the magnification obtained from the conventional method. This is explained as follows. In aliased image scanning, each successive sample along the scanning axis lands one incremental distance, ds, further relative to the beginning of each period. Thus,
one complete period is sampled after a number of samples, Q=P/ds. The length, LA, of one
reconstructed period on the display is Qdp, where dp is the display pitch, assumed in the example
given above to be 300μm. The apparent magnification is, therefore, MA = L P =dp/ds = 24,000. This is the same magnification as obtained from conventional sampling, using the sampling pitch ds. The ratio of the apparent magnification to the actual magnification, R=MA/M , is equal to ds'/ds.
[1084] Using the above-defined relationships between conventional scanning and aliased
image scanning, various advantages and uses of the aliased image scanning technique of the present invention will now be described.
[1085] Suppose that the expected target periodicity, PE, varies from the actual periodicity, PA,
by a small amount, ΔP: that is, PA = PE + AP . One might expect this offset in periodicity to
result from a scan field calibration error, or a misplacement of the sample surface with respect to
an expected working height. To illustrate, suppose that PE = lμm and ΔP - P£/100. Then PA =
l.Olμm. Suppose the specimen were sampled according to the conventional method of using a
sampling pitch much less than the expected period PE, for example, ds = PE/80 = 0.0125μm.
Figures 10 and 11 show the one- and two-dimensional results of scanning an image that has the
expected period of lμm with a sampling pitch
Figure imgf000020_0001
Figures 12 and 13 show the one-
and two-dimensional results of scanning an image that has a period of 1.01 μm with the same
sampling pitch, ds=0.0l 25μm. The difference between the images of the two specimens is barely perceptible, there being only a 1% difference in the length of the images.
[1086] Now consider the result of scanning the two specimens, the one with a period of 1 μm
and the other with a period of 1.01 μm, with the aliased image scanning technique of the present
invention. Using a sampling pitch of ds '=PE+ds=\.0\25μm, the results of scanning the first specimen having the expected periodicity of 1 μm are shown in Figures 14 and 15, and the results
of scanning the second specimen having the periodicity of 1.01 μm are shown in Figures 16 and
17. Clearly, the aliased imaging technique of the present invention results in a substantial
difference between the images of the two specimens.
[1087] The increased sensitivity to the difference between the actual periodicity of the specimen and the expected periodicity used to pick ds ' facilitates the use of the technique for
highly accurate beam calibration. Since the change in the apparent magnification is so
pronounced, it can be measured, and the value of ΔP can be derived there from.
[1088] The aliasing sample pitch, ds ', can be expressed in terms of the unknown periodicity:
ds = Pε + ds = (PA - AP) + ds = PA + (ds - ΔP)
In aliased sampling of the specimen with periodicity of PA, each successive sample along the
scanning axis lands one incremental distance, ds-ΔP, further relative to the beginning of each p period. Thus, one complete period is sampled after a number of samples, Q = -, — r . The
(ds - AP)
length, L , of one reconstructed period on the display is Qdp, where dp is the display pitch,
assumed in the example given above to be 300μm. The apparent magnification, MA=LA PA,
expressed as a function of ΔP, is therefore:
MA(AP) = ~^- ds - AP
Using this notation, we obtain the magnification relative to the magnification of the specimen with the expected periodicity, Pg:
MA(AP) ds
T(AP) =
MA( ) ds -AP
Defining a dimensionless variable, δ= ΔP/ds, we have: ΓΪΔP) :
\ - δ
which is plotted in Figure 18 as δ varies from 0 to 2. When ΔP =0, T=l, and the apparent
magnification is unchanged compared to the reference specimen of periodicity, PE. As ΔP
increases, the apparent magnification increases. In particular, as ΔP approaches +ds, δ approaches 1 and the magnification becomes very large.
[1089] When δ is less than 1 , corresponding to choosing ds < ΔP, the function, T, reverses
sign. This corresponds to a reversal of the image about the x-axis and the y-axis. To demonstrate this effect, a target that produces an asymmetric intensity pattern is used, such as shown in
Figures 19 and 20. Assume that the saw-tooth pattern shown in Figure 19 has a period of P=\ μm.
The one dimensional distribution can be described functionally as:
Figure imgf000022_0001
where the operator, A , denotes the periodic extension of the function (x/P) on the interval from = 0 to x = P. The corresponding two-dimensional function describing the distribution shown in Figure 20 is:
g(x,y) = A A p) where identical periodicity in both x a dy directions is used for clarity of exposition.
[1090] Using a sampling pitch, ds, of P/40 = 0.025μm results in an aliased image sample
pitch, ds , of P+ds = 1.025μm. To illustrate the image-reversing effect noted above, consider the two following cases:
a. ΔP = 0.8ds as shown in Figures 21 and 22; and
b. ΔP = 1.Ids as shown in Figures 23 and 24. When ΔP < ds , (case a), the image of the function g(x) is reversed with respect to the image of g(x) obtained when ΔP > ds, (case b). This result may be employed to detect small variations in
periodicity, PA, about an expected value PE.
[1091] The difference between actual and expected periodicity, ΔP can be determined by counting the number of reconstructed periods displayed. In the aliased imaging technique of the present invention, one complete period of the image is reconstructed from a number of samples,
NA(AP), calculated as follows:
A (ds - AP) (ds - AP)
where again, PA is the actual periodicity of the target function, PE is the expected periodicity and
ΔP=PA-PE- The number of periods, Np, of the target function that are displayed is given by:
N = - L ' Λ^(ΔP)
where Ns is the total number of samples acquired by the beam in one sweep across a dimension of the specimen.
[1092] The ratio of the number of periods, NP, that are displayed, to the number of periods expected is given by:
_ NP(AP) ξ(AP)
N,(0) _ NA(0)
NA(AP)
^(ds - AP) _ ds
(PE - P) o simplify this expression, we define the following two dimensionless variables:
γ = dslPc
β = AP / PE Then, we have:
Figure imgf000024_0001
Solving this equation for β yields:
Figure imgf000024_0002
[1093] Suppose, for a specimen exhibiting the sine-squared intensity distribution, given
above, with an expected periodicity of PE = lμm, that the chosen sampling pitch is
ds =P +ds= 1.1 μm. Then the expected image, corresponding to β(0) = 0 , is that shown in Figure
25. The number of periods of the target function in one dimension that are expected to be
displayed is: d
NP F = —Ns = }NS = 0.1 x (256) = 25.6 R where the superscript, E, denotes that this is the number of displayed periods that are expected.
This corresponds well with the number of periods that are obtained from counting the periods in one dimension shown in Figure 25.
[1094] Suppose that instead of receiving the expected image of Figure 25, corresponding to
PE = 1 μm, we obtain the image shown in Figure 26. The unknown periodicity of this function is
PA = 1.02. We can obtain successively more accurate approximations to PA as follows: An
approximate count of the number of periods displayed in Figure 26 in one dimension results in
Np (AP) = 20 , where the superscript, O, denotes that this is the number of periods actually
observed. The ratio of the number of periods observed to the number of periods expected gives
an approximation, ξ°(AP) , to ξ(AP) :
^(ΔP) = ^- = — = 0.781 NP b 25.6 From this we can obtain an approximation, β° (AP) , to the actual value of β(AP) :
Figure imgf000025_0001
which leads to the approximation, P°, to the actual value of PA as follows:
P° = Prβ° +Ph = 1.023 m
The error in this approximation is 0.003 μm or less than 3% of the actual periodicity, PA.
[1095] Now, if the current approximation, P°, is used as the expected periodicity and the
image is re-sampled with the same pitch of ds =0.1, a new approximation to ξ(AP) can be
obtained by again counting the number of displayed periods. From this, a closer approximation to the actual periodicity, PA, can be obtained. This process can be repeated until the approximate
value, β° (AP) , becomes arbitrarily small, or equivalently, until the approximate value, ξ° (ΔP) ,
becomes arbitrarily close to one. Thus, the aliased imaging technique can be employed to determine with high accuracy the periodicity of a reference sample. This reference sample can be
used to achieve high accuracy in beam calibration. Note that this process can be performed by
manually or automatically according to a suitable algorithm employing pattern recognition
techniques.
[1096] Figures 25, 26, 27, 28, and 29 illustrate the display of images derived for β= 0, β-
0.02, β= 0.066, β= 0.083, and β= 0.091 respectively. By counting the periods displayed in the
images and approximating ? according to the method described above we obtain the following
approximations, ff , and the resulting percentages of error between the exact and approximated
values of β.
Figure imgf000025_0002
Figure imgf000026_0001
Observe, that as ? approaches ds, the error decreases to zero, as would be expected.
[1097] The method of aliased image scanning can also be advantageously employed to detect
rotational misalignment between the axes of the periodic specimen pattern and the axes of the
scan field. Consider once again the periodic specimen represented by the periodic function f(x, y, P) defined above. Once again, equal periodicity in the x and y directions is assumed for
clarity. Suppose there exists a rotational misalignment of an angle θ between the specimen axes
and the scan field axes. Then the coordinates of the specimen, denoted (X, Y) are related to the
scan field coordinates, (x, ), through the following relationships:
X(x, y,θ) = x cos(#) - y sin(#) Y(x,y,θ) = sin(0) + y os(θ)
For illustration, suppose that P = 1 μm and #= 0.5 degrees. When this specimen is sampled
according to the conventional method with a sampling pitch of ds = 0.1 μm, the image shown in
Figure 30 is produced. Note that the small angular rotation of the specimen is scarcely discernable, rendering precise rotational alignment highly difficult.
[1098] Now consider the same specimen sampled according to the method of the present
invention with a sampling pitch of ds = P +'ds = l.lμm. Recall that for this value of ds the
resultant image would be the same as if the specimen were sampled conventionally with a
sampling pitch of ds, provided that #is equal to zero. However, with a small angular rotation of
0.5 degrees between the axes of the specimen and the scan field axis, the image shown in Figure 31 is obtained. Comparison of Figures 30 and 31 show that aliased image scanning produces a very pronounced increase in the apparent angular rotation of the specimen. The apparent angular
rotation, θ, is related to the actual angular rotation as follows:
sin(fl') _ ds sin(#) ds
For small angles this formula simplifies to:
θ _ ds θ ~ ds
Since ds is much greater than ds, θ is much greater than θ. Thus, the angular rotation will be
much more pronounced when aliased image scanning is employed. The expected numerical value
of θ for the present example is 5.5 degrees, which corresponds well with the rotation observed in
Figure 31.
[1099] Although the magnification of rotational misalignment is pronounced when aliased image scanning is employed, the scale and periodicity of the aliased image appear unchanged. In
fact, these quantities are reduced by a factor of cos(#), which is approximately one for small
values of θ.
[1100] The apparent angle of rotation created by aliased image scanning can be magnified
further by increasing ds . When θ = 0, aliased image scanning with a pitch of
ds = nP + ds produces identical images for all integer values, n. However, when θ is not zero,
the apparent rotation scales by a factor of n according to the relation:
sιn(<9 ) = sιn(< ) ds which, for small angles and small values of ds, simplifies to:
ds
Suppose that n is increased to two, while the other parameters of the example above are kept
constant: θ= 0.5, P - lμm, and ds - O.lμm. The resultant image is shown in Figure 32. The apparent angular rotation is sufficiently pronounced to measure θ directly from the image to be
about 10 degrees. From this measurement, we can calculate θ:
. ds θ = θ — = 0.5 degrees nP
[1101] Now consider the effect upon the image of varying the sample pitch value, ds = P + ds, by small increments of the value of ds. With an angular rotation of the specimen of θ= 0.5
degrees and with P = 1 μm we let ds = 0.1 and obtain the image of Figure 33. With ds = 0.5 we
obtain the image of Figure 34. Note that as ds is decreased the displayed image undergoes an
angular rotation as well as a magnification of scale. The affect of changing ds is shown in Figures
33 through 45 for corresponding to the following table of values of ds:
Figure imgf000028_0001
[1102] Notice that as ds decreases toward zero, the rotation of the image increases toward 90 degrees as the image magnification increases. As ds continues to decrease toward -0.1, the
rotation of the image increases toward 180 degrees as the magnification decreases. Note further,
that when a small angle of rotation, θ, is introduced between the specimen and the scan field axes, the condition of maximum magnification, ds = P, does not result in a constant gray level
display as would be expected when θ is equal to zero.
[1103] The phenomenon just described can be used to detect whether the periodicity of a
given specimen matches a reference periodicity. That is, by rotating the specimen by a small fixed angle with respect to the scan field axes and then successively adjusting d , the condition of maximum magnification and 90 degrees of rotation occurs when ds = P. In this way the
periodicity of the specimen can be determined with high precision.
[1104] The present invention can also be advantageously employed to detect and correct for non-orthogonal conditions arising from non-orthogonality of the target pattern of the specimen,
or non-orthogonality of the scan beam, or both. A non-orthogonal condition can be expressed in
terms of a deviation angle, a, between an axis of the specimen and an axis of the scan field as
follows:
X(x, y,a) = x cos(α) - y sin(α) Y(x,y,a) = y
For example, suppose that the periodicity of the specimen is P = 1 μm and the deviation angle, a,
is 0.5 degrees. Conventional scanning with a sample pitch of ds = O.lμm produces the image
shown in Figure 46. A small non-orthogonal condition is observable upon close examination of the image. The difficulty of observation of this error makes compensation for orthogonal
conditions difficult.
[1105] Now consider the same conditions except that the specimen is scanned according to the methods of the present invention with ds = P + ds = 1.1 μm. The resultant image is shown in Figure 47. Clearly, the non-orthogonal condition is much more pronounced in comparison to
Figure 46. If ds is increased to ds = 2P + ds = 2. lμm, the effect is even more pronounced, as
shown in Figure 48. Thus, the present invention enables a much more precise calibration of the
scan beam to eliminate non-orthogonal conditions.
[1106] The present invention may also be advantageously employed to detect and correct for anisotropic conditions arising from differences in scale factors in the x and y directions, whether arising from the condition of the specimen or lack of correct beam calibration. Suppose that a
relative stretch of the x-axis by a factor, K, exists:
X = xlκ Y = y
For example, suppose K = 1.05 and P = 1 μm. Conventional sampling with pitch ds = 0.06 results
in the image shown in Figure 49. Aliased image scanning with pitch ds = P + ds = l.Oόμm
results in the image shown in Figure 50. Clearly, the pronounced effect obtained by aliased image scanning enables detection and correction of even very small anisotropic conditions.
[1107] Thus, the method of aliased image scanning may be employed to achieve very fine
calibration because of error magnification, enabling the operator to calibrate for changes in working height, irregularities in scan gain, non-orthogonal conditions, rotational misalignment,
beam focus eccentricities and other aberrant conditions.
[1108] Therefore, the methods of the present invention are well suited for scanned beam
system calibration. In conventional imaging, the sampling pitch must be very small compared to the target features to be resolved. This restriction is removed without loss of resolution in aliased image scanning where a sample pitch greater than the periodicity of the targets in an array is used.
The resulting increase between successive beam positions minimizes the area dose per image scan. This leads to reduced target damage, allowing for longer dwell times, an increase in the number of acquisition frames, and higher beam currents. In addition, aliased image scanning increases the observability of misalignment, scaling, and rotation errors, which allows for
calibration of the scanned beam system with much higher precision. The large magnification of errors achieved by the present invention also makes the aliased image scanning techniques
particularly suitable for automated calibration of the system operating under the direction of software.
[1109] Note that the rectangular array of sampling points and targets shown in the figures is
but one embodiment for implementing the present invention. Other sampling patterns and target
patterns may be used, so long as the relative positions of each sample point and target location are defined so that an image of the shape may be constructed from points on each of the target
samples. Formation of the image shape may be performed continually by repeatedly sampling the array of targets and displaying the samples obtained'by each complete scan of the specimen. This allows the operator to make adjustments while visualizing the effect of his or her adjustments.
Since the samples taken during a complete scan of the calibration specimen according to the methods of the present invention are widely spaced, the large particle dosages that are destructive
of the surface to be imaged does not occur. Moreover, with suitable processing, the positions of
each sample within each target can be different for each different complete scan of the calibration specimen so that the same point within a target is not sampled more than once in any set of
complete scans of the array. Also note that although the targets are preferably of substantially
identical size and shape this is not especially critical for large arrays of small targets.
[1110] Note further that an aliased image calibration specimen comprising an array of targets for calibration of a scanned beam system as described above may be etched or deposited on a
wafer during the process of etching or deposition of integrated circuitry structure on the wafer. In
this way, a calibration specimen is automatically provided with each wafer submitted for subsequent scanned beam processing. This allows for focusing and calibration without loading a separate calibration specimen and then replacing it with the wafer to be deposited or etched. [1111] Thus, the methods of the present invention described above assist the operator of a
scanned beam system to achieve highly accurate beam focus, stigmation correction and rotational
alignment. Further, the methods may be employed to increase the accuracy and reliability of
algorithms designed to achieve automated beam focus, automated stigmation correction and automated rotational alignment, and other aberrant effects.
[1112] Although the present invention and its advantages have been described in detail, it
should be understood that various changes, substitutions and alterations can be made herein
without departing from the spirit and scope of the invention as defined by the appended claims.
The invention achieves multiple objectives, such as reducing calibration specimen damage and improving calibration sensitivity. Because the invention can be used in different applications for
different purposes, not every embodiment falling within the scope of the attached claims will
achieve every objective. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the
art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed that perform substantially the same function or achieve substantially the same result as
the corresponding embodiments described herein may be utilized according to the present
invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. [1113] We claim as follows:

Claims

1. A method for calibration of a scanned beam system, comprising the steps of:
sampling a specimen comprising an array of targets with a spacing between samples
that is greater than a spacing between targets in the array; and obtaining information from the samples concerning calibration of the system.
2. The method of claim 1 , wherein the step of obtaining information from the
samples further comprises the step of determining an extent to which a focal point of a beam deviates from an expected point.
3. The method of claim 1 , wherein the step of obtaining information from the samples further comprises the step of determining an extent to which a position of the specimen deviates from an expected position.
4. The method of claim 1, wherein the step of obtaining information from the image
further comprises the step of determining an extent to which a target periodicity deviates from an expected target periodicity.
5. The method of claim 1, wherein the step of obtaining information from the
samples further comprises the step of determining an extent of rotational misalignment of the specimen.
6. The method of claim 1, wherein the step of obtaining information from the
samples further comprises the step of determining an extent of rotational misalignment of deflection axes of the beam.
7. The method of claim 1 , wherein the step of obtaining information from the
samples further comprises the step of determining a periodicity of the targets.
8. The method of claim 1 , wherein the step of obtaining information from the samples further comprises the step of determining an extent of beam non-orthogonality.
9. The method of claim 1, wherein the step of obtaining information from the samples further comprises the step of determining an extent of non-orthogonality of a pattern
of the targets.
10. The method of claim 1, wherein the step of obtaining information from the samples further comprises the step of determining an extent of beam anisotropy.
11. The method of claim 1, wherein the step of obtaining information from the samples further comprises the step of determining an extent of anisotropy of a pattern of the
targets.
12. The method of claim 1, wherein the array of targets is a rectangular array.
13. The method of claim 1, wherein the spacing between samples is uniform along a
dimension of the array.
14. The method of claim 1, wherein the step of obtaining information from the samples further comprises the step of observing an image formed from the samples.
15. The method of claim 1, wherein the spacing between samples is adjusted iteratively to obtain information concerning calibration of the system.
16. The method of claim 1, wherein the specimen further comprises integrated circuitry.
17. The method of claim 1, further comprising the step of employing information
concerning calibration of the system to evaluate an automated beam calibration system.
18. A scanned beam calibration system comprising: a specimen comprising an array of targets; a beam deflection subsystem adapted to sample the specimen with a spacing between
samples that is greater than a spacing between targets in the array; and a subsystem adapted to provide information derived from the samples concerning calibration of the system.
19. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises an imaging device adapted to form an image from the samples.
20. The system of claim 18, wherein the subsystem adapted to provide information
from the samples comprises processing circuitry conditioned to process data obtained from the samples.
21. The system of claim 18, wherein the subsystem adapted to provide information
from the samples comprises a process for determining an extent to which a focal point of a beam deviates from an expected point.
22. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining an extent to which a target periodicity deviates from an expected target periodicity.
23. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining an extent to which a position of the specimen deviates from an expected position.
24. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining an extent of rotational misalignment of the specimen with respect to deflection axes of the beam.
25. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining wherein the step of obtaining information from the samples further comprises the step of determining an extent of beam non-orthogonality.
26. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining an extent of non-orthogonality of a pattern of the targets.
27. The system of claim 18, wherein the subsystem adapted to provide information from the samples comprises a process for determining an extent of beam anisotropy
28. The system of claim 18, wherein the subsystem adapted to provide information
from the samples comprises a process for determining an extent of anisotropy of a pattern of the targets.
29. The system of claim 18, wherein the spacing between samples is adjusted iteratively to achieve a refinement of calibration of the system.
30. The system of claim 18, wherein the system is automated according to an algorithm adapted to achieve calibration of the system.
PCT/US2002/020498 2001-01-26 2002-06-28 Method and apparatus for scanned instrument calibration WO2003005396A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003511269A JP3923468B2 (en) 2001-06-29 2002-06-28 Method and apparatus for calibration of scanning metrology devices
EP02749692A EP1428006B1 (en) 2001-01-26 2002-06-28 Method and apparatus for scanned instrument calibration
AU2002320188A AU2002320188A1 (en) 2001-01-26 2002-06-28 Method and apparatus for scanned instrument calibration

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US26447201P 2001-01-26 2001-01-26
US30214201P 2001-06-29 2001-06-29
US60/302,142 2001-06-29
US10/055,320 US6838380B2 (en) 2001-01-26 2002-01-23 Fabrication of high resistivity structures using focused ion beams
US10/186,206 2002-06-27
US10/186,206 US6770867B2 (en) 2001-06-29 2002-06-27 Method and apparatus for scanned instrument calibration

Publications (4)

Publication Number Publication Date
WO2003005396A2 true WO2003005396A2 (en) 2003-01-16
WO2003005396A3 WO2003005396A3 (en) 2003-04-10
WO2003005396A9 WO2003005396A9 (en) 2004-06-17
WO2003005396A8 WO2003005396A8 (en) 2004-10-21

Family

ID=33163105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/020498 WO2003005396A2 (en) 2001-01-26 2002-06-28 Method and apparatus for scanned instrument calibration

Country Status (3)

Country Link
EP (1) EP1428006B1 (en)
AU (1) AU2002320188A1 (en)
WO (1) WO2003005396A2 (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876883A (en) * 1972-06-30 1975-04-08 Ibm Method and system for focusing and registration in electron beam projection microfabrication
US4095112A (en) * 1974-01-25 1978-06-13 Thomson-Csf Device for and a method of calibrating electron-optical apparatus
US4370554A (en) * 1979-09-27 1983-01-25 International Business Machines Corporation Alignment system for particle beam lithography
US4379230A (en) * 1979-09-05 1983-04-05 U.S. Philips Corporation Automatic beam correction in a scanning transmission electron microscope
US4386850A (en) * 1980-12-23 1983-06-07 Rca Corporation Calibration device and method for an optical defect scanner
US4442361A (en) * 1982-09-30 1984-04-10 Storage Technology Partners (Through Stc Computer Research Corporation) System and method for calibrating electron beam systems
US4443703A (en) * 1981-02-23 1984-04-17 Nippon Telegraph & Telephone Public Corporation Method and apparatus of deflection calibration for a charged particle beam exposure apparatus
US4763004A (en) * 1984-01-10 1988-08-09 Fujitsu Limited Calibration method for electron beam exposer
US5644512A (en) * 1996-03-04 1997-07-01 Advanced Surface Microscopy, Inc. High precision calibration and feature measurement system for a scanning probe microscope
US5763894A (en) * 1997-01-23 1998-06-09 International Business Machines Corporation Calibration patterns and techniques for charged particle projection lithography systems
US5960255A (en) * 1994-06-07 1999-09-28 International Business Machines Corporation Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
US6194718B1 (en) * 1998-09-23 2001-02-27 Applied Materials, Inc. Method for reducing aliasing effects in scanning beam microscopy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788139B2 (en) * 1991-09-25 1998-08-20 株式会社日立製作所 Electron beam drawing equipment
US5424548A (en) * 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
US5798528A (en) * 1997-03-11 1998-08-25 International Business Machines Corporation Correction of pattern dependent position errors in electron beam lithography

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876883A (en) * 1972-06-30 1975-04-08 Ibm Method and system for focusing and registration in electron beam projection microfabrication
US4095112A (en) * 1974-01-25 1978-06-13 Thomson-Csf Device for and a method of calibrating electron-optical apparatus
US4379230A (en) * 1979-09-05 1983-04-05 U.S. Philips Corporation Automatic beam correction in a scanning transmission electron microscope
US4370554A (en) * 1979-09-27 1983-01-25 International Business Machines Corporation Alignment system for particle beam lithography
US4386850A (en) * 1980-12-23 1983-06-07 Rca Corporation Calibration device and method for an optical defect scanner
US4443703A (en) * 1981-02-23 1984-04-17 Nippon Telegraph & Telephone Public Corporation Method and apparatus of deflection calibration for a charged particle beam exposure apparatus
US4442361A (en) * 1982-09-30 1984-04-10 Storage Technology Partners (Through Stc Computer Research Corporation) System and method for calibrating electron beam systems
US4763004A (en) * 1984-01-10 1988-08-09 Fujitsu Limited Calibration method for electron beam exposer
US5960255A (en) * 1994-06-07 1999-09-28 International Business Machines Corporation Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
US5644512A (en) * 1996-03-04 1997-07-01 Advanced Surface Microscopy, Inc. High precision calibration and feature measurement system for a scanning probe microscope
US5763894A (en) * 1997-01-23 1998-06-09 International Business Machines Corporation Calibration patterns and techniques for charged particle projection lithography systems
US6194718B1 (en) * 1998-09-23 2001-02-27 Applied Materials, Inc. Method for reducing aliasing effects in scanning beam microscopy

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1428006A2 *

Also Published As

Publication number Publication date
WO2003005396A9 (en) 2004-06-17
WO2003005396A3 (en) 2003-04-10
EP1428006B1 (en) 2012-10-03
EP1428006A2 (en) 2004-06-16
WO2003005396A8 (en) 2004-10-21
AU2002320188A1 (en) 2003-01-21
EP1428006A4 (en) 2009-09-02
AU2002320188A8 (en) 2003-01-21

Similar Documents

Publication Publication Date Title
EP2068160B1 (en) Apparatus and method for observing defects in semiconductor wafers
US10529538B2 (en) Endpointing for focused ion beam processing
CN102364659B (en) Ion source, system and method
US7804068B2 (en) Determining dopant information
EP1998356B1 (en) In-Situ STEM Sample Preparation
JP6224612B2 (en) High-throughput TEM preparation process and hardware for backside thinning of cross-section observation slices
US8399831B2 (en) Forming an image while milling a work piece
US6770867B2 (en) Method and apparatus for scanned instrument calibration
EP2904382B1 (en) High aspect ratio structure analysis
JP2015517676A (en) Preparation of slices for TEM observation
US9488554B2 (en) Method and system for reducing curtaining in charged particle beam sample preparation
Davies et al. Focused ion beam machining and deposition for nanofabrication
Rödiger et al. Evaluation of chamber contamination in a scanning electron microscope
EP1428006B1 (en) Method and apparatus for scanned instrument calibration

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003511269

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2002749692

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 2002749692

Country of ref document: EP

COP Corrected version of pamphlet

Free format text: PAGES 1/28-28/28, DRAWINGS, REPLACED BY NEW PAGES 1/28-28/28; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: IN PCT GAZETTE 03/2003 UNDER (30) REPLACE "60/264,472, 29 JUNE 2001 (29.06.2001), US" BY "60/302,142, 29 JUNE 2001 (29.06.2001), US"