WO2002103431A1 - Catadioptric system and exposure system provided with the system - Google Patents

Catadioptric system and exposure system provided with the system Download PDF

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Publication number
WO2002103431A1
WO2002103431A1 PCT/JP2002/005259 JP0205259W WO02103431A1 WO 2002103431 A1 WO2002103431 A1 WO 2002103431A1 JP 0205259 W JP0205259 W JP 0205259W WO 02103431 A1 WO02103431 A1 WO 02103431A1
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WO
WIPO (PCT)
Prior art keywords
optical system
imaging optical
catadioptric
characterized
surface
Prior art date
Application number
PCT/JP2002/005259
Other languages
French (fr)
Japanese (ja)
Inventor
Tomowaki Takahashi
Original Assignee
Nikon Corporation
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Filing date
Publication date
Priority to JP2001-179579 priority Critical
Priority to JP2001179579A priority patent/JP4780364B2/en
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2002103431A1 publication Critical patent/WO2002103431A1/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0804Catadioptric systems using two curved mirrors
    • G02B17/0812Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70225Catadioptric systems, i.e. documents describing optical design aspect details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70275Multiple projection paths, array of projection systems, microlens projection systems, tandem projection systems

Abstract

A catadioptric system comprising a first image forming optical system (G1) having a concave reflection mirror (CM2) and a plane reflection mirror (M1) and used to form the first intermediate image of a first plane (R) based on light from the first plane, a second image forming optical system (G2) having a concave reflection mirror (CM3) and a plane reflection mirror (M4) and used to form the second intermediate image of the first plane based on light via the first image forming optical system, and a third refractive type image forming optical system (G3) for forming the final image of the first plane on a second plane (W) based on light via the second image forming optical system.

Description

Catadioptric optical system and equipped with the optical system exposure apparatus art

The present invention relates to an exposure apparatus having a catadioptric optical system and the optical system, anti-Ming optimal high resolution to be Ru exposure apparatus used in manufacturing in the semiconductor devices, especially as the Photo lithographic Ye morphism refraction type relates to a projection optical system.

Rice field

BACKGROUND

In recent years, in the production of manufacturing and a semiconductor chip mounting substrate of the semiconductor device, it is progressing miniaturization increasingly has been demanded a higher projection optical system resolving power in an exposure apparatus for printing a pattern. This satisfies the requirements of high resolution is the exposure light shorter wavelength must and increasing the NA (numerical aperture of the projection optical system). However, when the wavelength of the exposure light is shortened, the type of optical glass for practical use because of the absorption of light coming limited. For example, if the wavelength is less than or equal to 1 8 0 nm, practically usable glass material is the only fluorite.

In this case, when the projection optical system only refractive optical element (lens, such as plane-parallel plate), correction of chromatic aberration becomes full Ku impossible in the formed refraction type projection optical system. In other words, it is configuring only refractive optical element of the projection optical system having the required resolution becomes very difficult. And pairs to this, attempts have been made to the projection optical system only with the reflective optical member or reflector.

However, in this case, the reflection type projection optical system formed is large, and aspheric reflective surface is required. Note that the aspherical reflecting surface with high precision is extremely difficult in terms of production. Therefore, a combination of a refractive optical member made of optical glass to withstand use of the short wavelength light and reflecting mirror, the so-called catadioptric reduction optical system has been proposed.

Among them, Japanese Unexamined 4 one 2 3 4 7 2 2 No. or U.S. Patent No. 4, 7 7 9 9 6 6 JP, once the intermediate image using a concave reflection mirror only one form type catadioptric optical system that is known. In this type of catadioptric optical science system, reciprocating combined optical system portion comprising a concave reflector includes only negative lens, it does not include a refractive optical element having a positive power. As a result, incident on the concave reflecting mirror in a state the light flux is therefore wide, the diameter of the concave reflector was tends to increase.

In particular, JP-A-4 one 2 3 4 7 2 2 No. disclosed optical system in Japanese, the reciprocating combined optical system portion comprising a concave anti Ikyo has a structure of a full symmetric. In this case, the lightly aberration correction burden subsequent refractive optical system portion by suppressing the occurrence of aberrations in the reciprocating combined optical system portion as much as possible. However, because it uses a symmetric reciprocating and optical system, difficult working distance near the first surface is sufficiently ensured, also had to use a half prism for light path branching.

Further, U.S. Patent No. 4, 7 7 9 9 6 6 No. disclosed optical system in Japanese, using concave reflector in secondary imaging optical system disposed behind than the formation position of the intermediate image there. In this case, in order to ensure the necessary brightness of the optical system will be incident on the concave reflecting mirror in a state in which the light beam is widened. As a result, the diameter of the concave reflecting mirror is likely to be large, and miniaturization is difficult. On the other hand, is an intermediate image, also known reflection refractive optical system of the type forming only once with a plurality of reflecting mirrors. In this type of catadioptric system, it may be possible to reduce the number of lenses of the refractive optical system portion. However, in this type of catadioptric system, it has the following disadvantages.

The type of catadioptric optical system to place the reciprocating combined optical system portion of the structure as described above on the second surface side is the reduction side, from the relationship between the reduction ratio, the second surface (wafer after being reflected by the reflecting mirror It can not be secured and the child is sufficiently long the distance to the surface). Therefore, this optical path can not be inserted too many number of lenses in the brightness of the resulting optical system is inevitably limited value. Further, even if it is possible to even achieve an optical system having a high numerical aperture, because many of the refractive optical element is arranged in the optical path length of a limited, most first a wafer surface is the second surface distance between the lens surface of the second adhesive surface, not Ki de be secured sufficiently long so-called working distance WD.

In the conventional catadioptric system, it is necessary to bend the optical path, having Inevitably plurality of the optical axis (refer to straight line contiguous with refractive curved or songs in rate hearts reflection curved surface constituting the optical system) become. As a result, it takes a plurality of barrel to form an optical system, adjustment of the optical axis each other becomes very difficult, it has not been possible to realize an optical system with high accuracy. Incidentally, by using a pair of reflectors having an opening (light-transmitting portion) in the center, it is also possible catadioptric optical science system of the type arranged along all of the optical members of a single linear optical axis . However, in this type of catadioptric system, in order to block unnecessary light traveling along the optical axis without being reflected by the reflecting mirror, it is necessary to shield or center shielding of the center beam. As a result, there is a disadvantage of reduced contrast Bok in a pattern of a specific frequency due to the central shielding 蔽 occurs.

In the conventional catadioptric system, it can not be ensured the position should establish a valid field stop and aperture stop. Further, as described above, in the conventional catadioptric system, it can not be ensured sufficiently long working distance. As described above, in the conventional catadioptric system, easily concave mirror becomes large, it was not possible to reduce the size of the optical system.

Furthermore, in the conventional catadioptric optical system, the number of lenses Ru many tend der. In this case, especially F 2 excimer laser optical system for one The high performance of the antireflection film to be formed on the lens surface is difficult, easily lead to attenuation of the use amount. Although to achieve a high accuracy of the optical system in high performance, it is necessary to reduce the distance between the object plane and the image plane, this distance is not summer sufficiently small in the conventional catadioptric system. Disclosure of the Invention

The present invention has been made in view of the problems described above have fewer simple construction distances are small and the number of lenses between the object plane and the image plane, such as a vacuum ultraviolet wavelength or less of 1 8 0 nm and to provide a catadioptric optical system capable of achieving zero. 1 the following high resolution by using light in a wavelength range.

Furthermore, the present invention can secure a position for installing a valid field stop and aperture stop, for example the wavelength using light 1 8 0 nm or less vacuum ultraviolet wave length range 0. 1 z / m and to provide a catadioptric optical system capable of achieving the following high resolution.

Further, the present invention can secure a sufficiently long working distance, for example a wavelength of achieving 0. 1 m below the high resolution by using the light of the following vacuum ultraviolet wavelength region 1 8 0 nm and an object thereof to provide Hisage catadioptric optical system as possible.

The present invention also suppress an increase in size of the concave reflector can be miniaturized optical system, 0. 1 m or less, for example by using light having a wavelength of 1 8 0 nm or less in the vacuum ultraviolet wavelength range and to provide a catadioptric optical system capable of achieving high resolution.

Furthermore, using the catadioptric optical system of the present invention as a projection optical system, the wavelength For example by using the following exposure light 1 8 0 nm, 0. 1 m to perform good projection exposure under the following high resolution and an object thereof is to provide an exposure apparatus capable of. In order to solve the above problems, in the first aspect of the present invention has at least one concave reflecting mirror and at least one plane reflecting mirror, first of the first surface based on light from the first surface a first imaging optical system for forming a first intermediate image,

At least it has a one of at least the concave reflecting mirror one plane reflecting mirror, the second to form a second intermediate image of the first surface based on the light through the first imaging optical system an imaging optical system,

Characterized in that it comprises a third imaging optical system of refraction type for forming a final image of the first surface based on light passing through said second imaging optical system on the second surface providing catadioptric system.

According to a preferred embodiment of the first invention, all of the optical member and the second imaging optical system optical member the plane reflecting mirror dividing Kusubete of excluding the plane reflecting mirror of the first imaging optical system, linear to be positioned along a single first optical axis extending all optical members of the third imaging optical system, a single extending linearly so that be perpendicular to the first optical axis are arranged along a second optical axis, the light from the first surface, said one plane reflecting mirror of the first in the image forming optical system and one sequentially through the concave reflecting mirror, the first intermediate image forming a light through the first imaging optical system sequentially through the one plane reflecting mirror of the second imaging optical system and one concave reflecting mirror, forming the second intermediate image . '

According to a preferred embodiment of the first invention, the first imaging optical system, it is preferable to have a pre-Symbol negative lens component at least disposed immediately before the one of the concave reflecting mirror. The second imaging optical system, is preferable arbitrary to have a negative lens component at least arranged one immediately before the concave mirror. Further, the catadioptric optical system is preferably telecentric least one side of the first surface side and the second surface side. Further, it is preferably arranged that the field lens is in the optical path between the third image-forming optical system and the second imaging optical system. Furthermore, according to a preferred embodiment of the first invention, the field lens in an optical path between the first imaging optical system and the front Stories second imaging optical system is disposed. In this case, the at least one record lens of the Fi one Rudorenzu disposed in the optical path between the first imaging optical system and the second imaging optical system, the first imaging optical preferably has a partially notched shape in order to pass only light reflected from said concave reflection mirror without passing through the light incident to the concave reflecting mirror system. Further, at least one lens of said Fi one field lens disposed in the optical path between the first imaging optical system and the second imaging optical system, said first imaging optical system it is preferably formed together so that passing the bulk of the reflected light from the incident light and the concave reflecting mirror to the concave mirror.

In the second aspect of the present invention, the illumination system of the order to illuminating a mask set on the first surface, configured light sensitive substrate with an image of a pattern formed on the mask on the second surface it and a first catadioptric optical system of the present invention for forming to provide an exposure apparatus according to claim. According to preferred not aspect of the second invention, the by relatively moving the mask and the sensitive optical substrate against catadioptric optical system, to be scanned exposing the pattern of the mask onto the photosensitive substrate preferable. BRIEF DESCRIPTION OF THE DRAWINGS

Figure 1 is a diagram for explaining a basic configuration of a catadioptric system of the present invention.

Figure 2 is a diagram schematically showing an overall configuration of an exposure apparatus such catadioptric system equipped with a projection optical system in each embodiment of the present invention.

Figure 3 is a diagram showing the positional relationship between the rectangular exposure region (i.e. effective exposed region) and a reference optical axis which is formed on the wafer.

Figure 4 is a diagram showing the lenses configuration of the catadioptric optical system according to Example 1 (a projection optical system PL).

Figure 5 is a diagram showing the lateral aberration of such catadioptric optical system in the first embodiment: FIG. 6 is a diagram showing the lateral aberration of such catadioptric optical system in the first embodiment (FIG. 7, catadioptric optical system according to the second embodiment illustrates the lenses configuration of (the projection optical system PL).

Figure 8 is a diagram showing lateral aberration of such catadioptric optical system in the second embodiment <9 is a diagram showing lateral aberration of the catadioptric optical system according to the second embodiment (FIG. 1 0 a full port one Chiya one preparative technique in obtaining semiconductor devices as microdevices.

Figure 1 1 is a Furochiya one preparative technique in obtaining a liquid crystal display element as a microdevice. BEST MODE FOR CARRYING OUT THE INVENTION

Figure 1 is a diagram for explaining a basic configuration of a catadioptric system of the present invention. In Figure 1, the catadioptric optical system of the present invention is applied to a projection optical system of a scanning exposure type exposure apparatus. As shown in FIG. 1, the catadioptric optical science system of the present invention includes a first imaging optical system G 1 which forms a first intermediate image of the pattern of reticle R as a projection original disposed on the first surface ing. The first imaging optical system G 1 is closed at least one concave reflecting mirror and at least one plane reflecting mirror, i.e. a first plane reflecting mirror M 1 and the second concave reflecting mirror CM 2. In the first imaging optical system G 1, to form a first intermediate image light from the reticle R via the first plane reflecting mirror M 1 and the second concave reflecting mirror CM 2.

Light through the first imaging optical system G 1 through the second imaging optical system G 2, to form a second intermediate image of the pattern of les chicle R. The second imaging optical system G 2 is, has at least one concave reflecting mirror and at least one plane reflecting mirror, i.e. the third concave reflector CM 3 and the fourth plane reflecting mirror M 4. Therefore. In the second imaging optical system G 2, the second intermediate image light through the first imaging optical system G 1 is via the third concave anti Ikyo CM 3 and the fourth plane reflecting mirror M 4 formed to. Light through the second imaging optical system G 2 is, via the third imaging optical system G 3 of a refractive type having a plurality of refractive optical member without including the reflecting mirror, the final image of the pattern of the reticle scale formed on the wafer W as a photosensitive substrate disposed on the second surface. In equipped with EXPOSURE APPARATUS as a projection optical system catadioptric optical system of the present invention, the reticle R and while moving along the wafer W in a predetermined direction (scanning direction), a rectangular illumination region IR and the effective exposure region ER the scanning exposure based on the do.

According to a particular embodiment, all but the fourth plane reflecting mirror M 4 in all the optical member and the second imaging optical system G 2 other than the first plane reflecting mirror M 1 of the first imaging optical system G 1 the optical member is disposed along the first optical axis AX 1 of the single extending straight. The optical member of Te to base of the third imaging optical system G 3 are, disposed along a second optical axis AX 2 single extending straight so as to be perpendicular to the first optical axis AX 1 there. It may be integrally formed first flat reflecting mirror M 1 and a fourth planar reflection mirror M 4 as the front and back surfaces mirror. When you create a first plane reflecting mirror M 1 and the fourth plane reflecting mirror M 4 integrally, easily manufactured with high precision on the front and back surfaces. Although when arranging the first planar reflection mirror M l and the fourth plane reflecting mirror M 4 and the place position is required angle adjustment, if that is made integral, a first planar reflection mirror M 1 is that the fourth plane reflecting mirror M 4 be arranged with an error in the negative direction from the predetermined angle cancels the error in the positive direction from a predetermined angle, predetermined in the third imaging optical system G 3 to be described later it can be incident at an angle.

According to a further specific embodiment, the optical path between the first imaging optical system G 1 and the second imaging optical system G 2, the field lens FL is arranged. Here, the field lens FL, without contributing positively for the formation of the first intermediate image, has a function of matching connecting the first imaging optical system G 1 and the second imaging optical system G 2. At least one record lens of the field lens FL is to pass only the light reflected from the second concave reflector without passing through the incident light to the second concave reflection mirror of the first imaging optical system G 1 with a partially cut-out shape to.

Further, at least one lens of the field lens FL is a reflection light from the incident light and the second concave reflection mirror to the second concave reflection mirror of the first imaging optical system G 1 to both pass ing. Even in the optical path between the second imaging optical system G 2 and the third imaging optical system G 3, if necessary, the field lens is arranged.

Further, according to a specific aspect, just before the third concave mirror CM 3. the second concave reflection mirror CM 2 and a second imaging optical system G 2 first imaging optical system G 1, respectively at least one negative lens component is disposed. More this configuration, the refractive optical element (lens component) be formed of a single species optical material, it is possible to satisfactorily correct chromatic aberration. Furthermore, it is possible to simultaneously favorably correct the chromatic aberration difference aberration and lateral chromatic aberration on the axis.

Further, the field stop FS defining an image area formed by the catadioptric optical system in the vicinity of the field lens FL between the first imaging optical system G 1 and the second imaging optical system G 2 or a second, it can be disposed in the vicinity of the field lens between the imaging optical system G 2 and the third imaging optical system G 3. In this case, it is possible to adopt a configuration that may not be provided field stop in the illumination optical system. Furthermore, it is possible in the optical path of the third imaging optical system G 3, the aperture stop is disposed AS. As described above, in the catadioptric optical system of the present invention includes a first imaging optical system G 1 Contact and second imaging optical system G 2 are both at least one concave reflector and least one plane reflecting mirror the a, the third imaging optical system G 3 constitute a refractive optical system. Thus, according to an exemplary embodiment, the first imaging optical system G 1 and second imaging optical system G 2 is disposed along the first optical axis AX 1, the third imaging optical system G 3 a the second optical axis AX 2 perpendicular to the first optical axis AX 1 is along connexion arrangement. Further, the reticle R and the wafer W will be arranged along a second optical axis AX 2.

Thus, in the present invention, being disposed along a second optical axis AX 2 of the reticle R and the wafer W is arranged shall apply only the third imaging optical system G 3, the first imaging optical system G 1 and second imaging optical system G 2 is disposed along the first optical axis AX 1 perpendicular to the second optical axis AX 2. Accordingly, in the present invention, the distance between the distance or the object plane and the image plane between the reticle R and the wafer W less that can be set, can you to realize highly accurate optical system thus performance. In particular, the Rukoto are perpendicular first optical axis AX 1 and a second optical axis AX 2, adjustment of the optical axis each other easier, it is easily to realize a highly precise optical science-based high-performance Become.

Further, by forming the first imaging optical system G 1 and second imaging optical system G 2 as a catadioptric system, be formed lens component of an optical material of a single kind, good correction of chromatic aberration It can become. Additionally, placing one negative lens component at least each immediately before the third concave reflector CM 3 immediately before and the second imaging optical system G 2 of the second concave reflection mirror CM 2 in the first imaging optical system G 1 by, can it to simultaneously satisfactorily correct the longitudinal chromatic aberration and lateral chromatic aberration.

Further, in the present invention, the third power refractive optical system portion is positive of the image forming optical system G 3 positively tend Petzval sum in order to have a (power), the first imaging optical system G 1 and the offset by the negative Petzval sum of the concave reflecting mirror portion in the second imaging optical system G 2 (CM 2, CM 3), it is possible to suppress the overall Petzval sum completely zero. Furthermore, in the present invention, as shown in each real施例described below, since little simple configuration of lenses is enabled, for example, F 2 be an excimer laser beam rather difficulty leads to attenuation of the use quantity, it is possible to avoid a decrease in throughput Bok exposure apparatus.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

Figure 2 is a diagram schematically showing an overall configuration of an exposure apparatus with a catadioptric optical system according to each embodiment Te and the projection optical system u of the present invention. Incidentally, FIG in and have your 2, a Z-axis parallel to the reference optical axis, that is, the second optical axis AX 2 of the catadioptric optical system constituting the projection optical system PL, a plane perpendicular to the reference optical axis AX 2 2 the parallel to Y-axis in the plane, and the X-axis perpendicular to the paper surface.

Exposing the illustrated apparatus, a light source 1 0 0 for supplying illumination light in the ultraviolet region, and a F 2 laser light source (oscillation center wavelength of 1 5 7. 6 nm). Light emitted from the light source 1 0 0 via the illumination optical system IL, for example, to uniformly illuminate the reticle in which a predetermined path evening over emissions are formed (mask) R. The optical path is the casing are sealed with (not shown), space from the light source 1 0 0 to the most reticle side optical member in the illumination optical system IL between the light source 1 0 0 and the illumination optical system IL is held or absorption of the exposure light is substituted with an inert gas such as Heriumugasu and nitrogen is low gas, or a substantially vacuum state.

The reticle R, via a reticle holder RH is held parallel to the XY plane on a reticle stage RS. The reticle R is formed with a base-out pattern to transfer a rectangular pattern region having short sides and along the Y direction has the long side along the X direction of the entire pattern area is illuminated. The reticle stage RS is more to the action of a driving system not shown, along a reticle plane (i.e. XY plane) is two-dimensionally movable, its position coordinate is the interferometer RIF using a reticle moving mirror RM It is configured to be a and the position control measurement Te cowpea.

Light from the pattern formed on the reticle R through the projection optical system PL of catadioptric, to form a reticle pattern image on a wafer W being a photosensitive substrate. Wafer W via a wafer table (wafer holder) WT, is held parallel to the XY plane on a wafer stage WS. And, the quadrature of chromatic to correspond optically to a rectangular illumination area, along the X direction on © E wafer W to and short sides along the Y direction has a long side on the reticle R Pas evening one down image is formed on the exposed region of the shape. Wafer stage WS is movable wafer surface by the action of a driving system not shown (i.e., the XY plane) two-dimensionally along, the position coordinates are measured by an interferometer WIF using a wafer moving mirror WM and it consists as and are position control.

Figure 3 is a diagram showing the positional relationship between the rectangular exposure region (i.e. effective exposed region) and a reference optical axis which is formed on the wafer. As shown in FIG. 3, in each embodiment, in the circular region (image circle) in IF having a radius A around the reference optical axis AX 2 (corresponding to the maximum image height) from the reference optical axis AX 2 - rectangular rms exposure region ER having a desired size at a position eccentric to the Y direction is set. Here, the length in the X direction of the effective exposure region ER is LX, and the length of the Y direction is LY.

Accordingly, as shown in FIG. 1, on the reticle R, a rectangular illumination region IR having a reference optical axis AX 2 from the + Y direction to the eccentric size Contact and shape corresponding to the effective exposure region ER in the position forming It will have been. With other words, in the circular region having a radius B around the reference optical axis AX 2 (corresponding to the maximum object height), the offset from the reference optical axis AX 2 in the + Y direction position of the desired size rectangular illumination region IR is it is configured. '

Further, in the exposure apparatus shown, (the first plane reflecting mirror M l In each of the embodiments) disposed in the most wafer side optical element arranged on the most reticle side Chi sac optical members constituting the projection optical system PL an optical member (lens L 3 1 2 in the first embodiment, the lens L 3 1 1 in the second embodiment) the inner portion of the projection optical system PL in between is configured so as to maintain the airtight state, the projection optical system PL if internal gas is substituted with inert gas such as Riumugasu and nitrogen into, or are held substantially in a vacuum state.

Further, in a narrow optical path between the illumination optical system IL and the projection optical system PL, Les 丄

'While such over-di RS is located: either an inert gas such as nitrogen or helium gas into the Rechiku Le R and casing such as sealing surround the reticle stage RS (not Figure shown) is filled, or substantially It is held in a vacuum state.

Further, in a narrow optical path between the projection optical system PL and the wafer W, a casing for sealing surrounding the like force Weha W and © E c stage WS, such as a wafer W contact and the wafer stage WS are arranged (not shown) if an inert gas such as nitrogen or Heriumugasu inside is filled, or is held substantially vacuum state. Thus, Wataru from the light source 1 0 0 the entire optical path to the wafer W connexion atmosphere without exposure light is little absorbed are formed.

As described above, the illumination area and © E eight W exposure region on the reticle R defined by the projection optical system PL (i.e. the effective exposure region ER) is a rectangular shape having short sides along the Y-direction . Thus, the drive system and the interferometer (RIF, WIF) while position control of the reticle R and the wafer W by using a, along the shorter side direction to a KazuSatoshi Y direction of the rectangular exposure area and illumination area a reticle stage RS and the wafer stage WS, whereby thus the reticle R and the wafer W opposite direction (to or opposite direction) synchronously moved (scanned) is on the wafer W long sides of the exposure area reticle pattern is scanned and exposed to a region having a length corresponding to the scanning amount of and the wafer W having a width equal to (amount of movement).

In each example, the projection optical system PL consisting of catadioptric optical system of the present invention, the first imaging optical catadioptric for forming a first intermediate image of the pattern of the reticle R disposed on the first surface a system G 1, the second imaging optical system G 2 catadioptric for forming a second intermediate image of the pattern of the reticle R on the basis of the light through the first imaging optical system G 1, the second refractive third imaging optical system for forming a final image of the reticle pattern on the wafer W disposed on the second surface based on the light through the imaging optical system G 2 (reduced image of the reticle pattern) and a G 3.

In each example, all optical except fourth plane reflecting mirror M4 of all optical member and the second imaging optical system G 2 other than the first plane reflecting mirror M 1 of the first imaging optical system G 1 member, that is disposed along the first optical axis AX 1. Further, all the optical members constituting the third imaging optical system G 3 are, are arranged along a second optical axis AX 2 perpendicular to the first optical axis AX 1. Furthermore, the first Fi Rudorenzu is disposed in the optical path between the first imaging optical system G 1 and the second imaging optical system G 2, and the second imaging optical system G 2 third imaging optical system G 3 second Fi one Rudorenzu is disposed on the optical path between the.

In each example, all of the refracting optical members constituting the projection optical system PL (lens component) using fluorite (C a F 2 crystals). The oscillation center wavelength of F 2 laser beam as the exposure light is 1 5 7. 6 nm, 1 5 7. 6 refractive index of the C a F 2 in the vicinity nm is, + 1 ρπι wavelength change per 2 . 45 X 1 0- s varies at a rate of, - 1 pm per wavelength change + 2. changes at a rate of 4 5 X 1 0- 6. In other words, Te 1 5 7. 6 nm near smell, dispersion of the refractive index of the C a F 2 (d nZci A ) is 2. a 45 X 1 0 "pm.

Thus, in each embodiment, the refractive index of the C a F 2 with respect to the center wavelength of 1 5 7. 6 nm is 1.5 6 0 0 0 0. Then, 1 5 7. 6 nm + 0. 4 pm = 1 5 7. 6 0 0 4 refractive index of the C a F 2 against nm is 1.5 5 9 9 9 9 0 2 = 1.5 59 9 9 9 , and the 1 5 7. refractive index of the C a F 2 is for 6 n m- 0. 4 pm = 1 5 7. 5 9 9 5 = nm 1. 5 6 0 0 00 98 = 1. 5 600 0 1 it is.

In each example, the aspherical surface is a direction perpendicular to the optical axis height and y, along the optical axis between the position on the aspherical surface at the height y from the tangential plane at the vertex of the aspherical surface distance (sag amount) is z, a vertex radius of curvature is r, a circle cone coefficient is kappa, when the η following aspheric coefficients set to C ", is represented by the following formula (a).

z = (yr) / [1 + {1 - (1 + c) · yV r 2} 1/2 ]

+ C 4 · y 4 + C y 6 + C 8 · y 8 + C 10 - y '. (A)

In each embodiment, the lens surface formed in an aspherical shape is provided with mark * on the right side of the surface number.

First Embodiment]

Figure 4 is a diagram showing the lenses configuration of the catadioptric optical system according to Example 1 (a projection optical system PL). In the catadioptric optical system of FIG. 4, the first imaging light Science system G 1 includes, along the reticle side in the traveling direction of the light, the first plane reflecting mirror M 1, convex surface facing the first plane reflecting mirror M 1 side a positive meniscus lens L 1 1 with its, a biconcave lens L 1 2, and a second concave reflecting mirror CM 2 Metropolitan having a concave surface facing the first plane reflecting mirror M l side. Here, a positive meniscus lens L 1 1, a biconcave lens L 1 2, and the second concave reflecting mirror CM 2 is arranged in order from the right side in the figure along a first optical axis AX 1 horizontal in the drawing.

The second imaging optical system G 2 is, along the first imaging optical system G 1 side in the traveling Direction of light, a negative meniscus lens L 2 having a concave surface facing the first imaging optical system G 1 side 1, a third concave reflector CM 3 having a concave surface facing the first imaging optical system G 1 side, and a fourth planar reflection mirror M4 Prefecture. Here, a negative meniscus lens L 2 1 and the third concave mirror CM 3 is a left side in the figure along a first optical axis AX 1 are arranged in this order.

Furthermore, the third imaging optical system G 3 are, in order from the reticle side, a positive meniscus lens L 3 1 with a convex surface facing the reticle side, a negative meniscus lens with aspheric concave surface on the reticle side L 3 2 When, a negative meniscus lens L 3 3 toward the aspheric concave surface facing the wafer side, a biconvex lens L 34, a negative meniscus lens L 3 5 toward the non-spherical convex surface facing the reticle side, a reticle side 1 a positive meniscus lens L 3 6 toward the l beta b convex, an aperture stop aS, biconvex lens L 3 7 having its non-spherical convex surface facing the reticle side, a positive meniscus lens L 3 with a convex surface facing the reticle side 8, a double convex lens L 3 9 toward the aspherical convex surface facing the wafer side, a biconvex lens L 3 1 0, and a positive meniscus lens L 3 1 1 toward the non-spherical concave surface facing the wafer side, both convex lens L 3 1 2 is Toka et configuration. The lens L 3 1 to L 3 1 2 are arranged in order from the upper side in the drawing (reticle side) along the second optical axis AX 2 of the vertical in FIG. The first imaging optical system G 1 and the optical path between the second imaging optical system G 2, along the first imaging optical system G 1 side in the traveling direction of the light, the first imaging a positive meniscus lens L 4 1 with a concave surface facing the optical system G 1 side, a first field composed of partial lens L 4 2 Metropolitan positive meniscus lens having a convex surface directed toward the first imaging optical system G 1 side lens is disposed. That is, partial lens L 4 2 of the positive meniscus lens L 4 1 and the positive meniscus lens is the left side in the figure along a first optical axis AX 1 are arranged in this order.

Here, a positive meniscus lens L 4 1 is a same lens and a positive meniscus lens LI 1, both passing the reflected light from the incident light and the second concave reflecting mirror CM 2 to the second concave reflection mirror CM 2 . Partial lens L 4 2 positive meniscus lens, without having to go to pass incident light to the second concave reflecting mirror CM 2, in order to pass only the light reflected from the second concave reflection mirror CM 2, a positive meniscus lens a has a partially cut away shape.

Further, a second imaging optical system G 2 is in the optical path between the third image-forming optical system G 3, in order from the reticle side, biconvex lens L 5 1 toward the non-spherical convex surface to the reticle side , convex positive meniscus lens L 5 2 with its reticle side, a second field lens is arranged which consists of a positive meniscus lens L 5 3 Metropolitan that the © E c side toward the non-spherical convex surface . The lens L 5 1~L 5 '3 are the upper side in the drawing along the second optical axis AX 2 (reticle side) are arranged in this order.χ?

Thus, in the first embodiment, after the light from the reticle R, is reflected by the first plane reflecting mirror Micromax 1, via the positive meniscus lens LI 1 and a biconcave lens L 1 2, the second concave reflecting mirror CM 2 incident on. The light reflected by the second concave reflecting mirror CM 2 forms a first intermediate image of the reticle pattern in the vicinity of the first Fi one Rudorenzu (L 4 1, L 42). Light from the first intermediate image formed in the vicinity of the first field lens (L 4 1, L 42) via a negative Meni Sukasurenzu L 2 1, incident on the third concave reflector CM 3.

The light reflected by the third concave mirror CM 3 through the negative meniscus lens L 2 1, is incident on the fourth plane reflecting mirror M4. The light reflected by the fourth plane reflecting mirror M4 forms a second intermediate image of Rechikurupa turn in the second field lens (L 5 1~L 5 3). Light from the second intermediate image formed in the second field lens (L 5 1~L 5 3), each lens constituting the third imaging optical system G 3 L 3:! A ~ L 3 1 2 through it, to form the final image of the reticle pattern onto the wafer W.

The following table (1), supra Various values ​​of the catadioptric optical system according to a first embodiment the gel. In the main specifications of Table (1), the center wavelength of λ is the exposure light, jS are projecting shadow magnification '(imaging magnification of the entire system), NA the image-side (© E eight side) numerical aperture, A dimension radius or maximum image height of the image circle IF on the wafer W, B is a maximum object height corresponding to the maximum image height a, LX is along the X direction of the effective exposure region ER (the dimension of the long side) the, LY indicates Y direction along ivy dimension of the effective exposure region ER (the length of the short side), respectively.

In the optical members in Table (1), the order of a surface plane numbers along the light traveling direction from the retinal cycle side of the first column, the curvature of r of the second column each surface radius (aspherical and the mm), the axial spacing or spacing of d in the third column each face (mm), n in the fourth column indicates the refractive index with respect to the central wave length, respectively a radius of curvature at the top in the case of. The surface interval d is assumed to change its sign each time that will be reflected. Therefore, the spacing d code is negative in optical path from the optical path and the third concave reflector CM 3 from the first plane reflecting mirror M 1 to the second concave reflecting mirror CM 2 to the fourth plane reflecting mirror M 4 and then, and with its other positive in the optical path.

Further, in the optical surface disposed along a first optical axis, and city the curvature radius of the convex surface toward the left side of the drawing positive, the radius of curvature of the concave surface toward the left side in the drawing as negative. Furthermore, the optical surface disposed along a second optical axis, reticle side is positive radius of curvature of the convex surface toward the (in the drawing upper), and in One suited to the reticle side the radius of curvature of the concave surface negative. Also in Table (2) and later, notation above is the same.

(table 1 )

(Main Specifications)

λ = 1 57. 6 nm

β = 1/5

Ν Α = 0. 845

A = 20 mm

Β = 1 00 mm

L Χ = 2 2 mm

LY = 5. 5 mm

(The specifications of the optical members in the original)

Surface number rdn

(Reticle plane) 290.026586

1 oo (first plane reflecting mirror M 1)

2 -375.61418 -69.999996 1.560000 (lens 1 1)

3 -8384.72157 -577. 10812

4 3695.39575 -15.430078 1.560000 (lens L 1 2) 5 -1011.27343 -20.000282

6 488. .06850 20 • 000282 (second concave reflecting mirror CM

7 -1011. 27343 15.430078 1.560000 (lens, T 1 9)

8 3695.39575 577.410812

9 -8384. 72155 69.999996 (lens' T 4 1)

10 -375. 61418 1.000000

11 523.29394 26.651917 (lens L 4 2)

12 7089.68959 776.202894

13 -233. 13196 12.344063 (lens 2 1)

14 -782. 75388 20.000264

15 -397 .38457 -20 .000264 CD (third concave mirror CM

16 -782. 75 388 -12. 344 063 (lens 2 1)

17. -233. 13196 -730. 717730

18 oo 200. 000000 (Fourth plane reflecting mirror M 4)

19 * 485.08331 29.459002 (lens L 5 1)

20 -3575. 98802 1.000000

21 233.35657 29.671010 (lens 5 2)

22 486.59435 92.567882

23 -2726. 09488 15.000000 (lens 5 3)

24 * -905. 37791 189.879636

25 171.44052 18.057863 (lens 3 1)

26 230.14097 81.533597

27 * -134. 73026 23.510345 (lens L 3 2)

28 -3198. .32252 19.739819

29 200. .39557 15.000000 (lens 3 3)

30 * 155.44391 11.006083

31 214. .60791 43.765233 (lens L 3 4) 32 -552.06075 4.884579

33 * 273.28545 15.000000 1.560000 (lens 35) 34 169.26001 49.818640

35 206.47284 28.337440 560,000 (lens L 3 6)

36 512.08579 56.625033

37 oo 29.862740 (aperture stop AS)

38 * 307.92600 29.246184 1.560000 (lens L 3 7)

39 -1614.99027

40 339.56596 15.002529 1.560000 (lens L 3 8) 41 428.85314

42 292.93034 55.380125 1.560000 (lens 3 9) 43 * -365.29687 4.141093

44 394.28173 53.678655 1.560000 (lens 3 1 0)

45 -1442.13457 2.718799

46 112.27860 28.030508 1.560000 (lens L 3 1 1) 47 * 314.25185 6.015629

48 666.58142 53.355715 1.560000 (lens 3 1 2)

49 -1471.85947 6.000000

(Wafer surface)

(Aspherical de Isseki)

1 9 side

κ = 0. 0 0 0 0 0 0

C 4 = - 0. 1 7 8 1 49 X 1 0- 8 C 6 = 0 4 0 5 0 49 X 1 0- 13

C 8 = 0. 46 8 5 1 6 X 1 0 - '8 C 10 = 0 8 8 5 9 2 3 X 1 0- 24

24 face OTXSSTT ^ T · 0 - = 9 3 8 - 0 TX 9 ε S 6 I ^ '0 =' o

oooooo · 0 = ¾

s ε

01

u-0 TXS 2 T 9 0 2 · 0 - D tl - 0 TX ^ T 0 8 9 8 • o - = s 0

0 Τ XS 9 8 0 0 9 ■ 0 - 9 D i - 0 IXIZ ΐ s ε .0 D

oooooo .0 =

8 ε

0, - o I x ^ ΐ ε s ε T 'o:? 01 0 91 - 0 IX 6 ^ 2 9 T 2 0 _ = s

I, -0 TX 9 SZTI - 0 : 9 i-0 TX 6 9 9 Z 8 e 0 D

OOOOOO 0 = y

91

u-0 TXZ 2 I ^ Z 9 '0 J, 3 9.- 0 1 X 9 0 9 8 ^ ^ • 0 - = 8 0 Z1 -0 TX ■ 0: 9 i-0 IX 9 8 0 T 22' 0 - D

OOOOOO .0 = ¾

Deer o ε 01

0 Τ Χ ΐ Ζ Τ ^ 2 8 - 0:. '0 9i- 0 1 X 8 8 1 9 8 2 0 = 8 O 0 IX 6 0 "[' 0: 9 D i-0 TXT 8 6 0 ST 0 = D

OOOOOO 0 = y

u -0 Τ Χ 6 6 Τ 9 Τ ^ '0 - 01

0 S1 -0 IX 6 - 0 = 8 D ει -0 Τ Χ Τ 2 6 ΐ ε ^ ■ 0 = 9 0 Α - 0 TX 6 6 0 8 TT - 0 = "0

OOOOOO "0 = 5

6SZS0 / Z0df / X3d IZ c 0. 40 3 1 64 X 1 0 -17 c 0. 3 0 7 8 6 1 X 1 0

47 face

K = 0. 0 0 0 0 0 0

C 4 - 0. 3 6 6 9 3 2 X 1 0 "7 C 6 0. 4 5 8 2 58 X 1 0 - | 2 C a = - 0. 3 8 6 3 8 8 X 1 0 6 C 10 0 . 2 74 1 50 X 1 0 - |. 9 Figures 5 and 6 are shown to view the lateral aberration of the catadioptric optical system according to the first embodiment in the aberration diagrams, Y denotes an image height (mm) of shows. as from the aberration diagrams apparent, in the first embodiment, the wavelength width of 1 5 7. 6 nm ± 0. 4 pm exposure light, that is, the center wavelength in 1 5 7. 6 nm against the F 2 laser beam of half width 0. 7 pm, this chromatic aberrations are satisfactorily corrected Togawakaru. Further, spherical aberration, coma, astigmatism, distortion (distortion aberration) is almost no aberration are well corrected to a state close, it was confirmed that an excellent image forming performance.

Second Embodiment]

Figure 7 is a diagram showing the lenses constituting the second embodiment according catadioptric optical system in Example (projection optical system PL). In the catadioptric optical system shown in FIG. 7, the first imaging light Science system G 1 includes, along the reticle side in the traveling direction of the light, the first plane reflecting mirror M 1, convex surface facing the first plane reflecting mirror M 1 side a positive meniscus lens L 1 1 with its, a biconcave lens L 1 2, and a second concave reflecting mirror CM 2 Metropolitan having a concave surface facing the first plane reflecting mirror M 1 side. Here, a positive meniscus lens L 1 1, a biconcave lens L 1 2, and the second concave reflecting mirror CM2 are disposed in order from the right side in the figure along a first optical axis AX 1 horizontal in the drawing.

The second imaging optical system G 2 is, along the first imaging optical system G 1 side in the traveling Direction of light, a negative meniscus lens L 2 having a concave surface facing the first imaging optical system G 1 side 1, a third concave reflector CM 3 having a concave surface facing the first imaging optical system G 1 side, and a fourth planar reflection mirror M 4 Prefecture. Here, the negative meniscus lens 2 1 and the third concave mirror CM 3 is a left side in the figure along a first optical axis AX 1 are arranged in this order.

Furthermore, the third imaging optical system G 3 are, in order from the reticle side, a negative meniscus lens L 3 1 with a concave surface facing the reticle side, biconvex lens with its aspherical convex surface on the reticle side L 3 2 and , toward a biconcave lens L 3 3 toward the aspheric concave surface facing the wafer side, a biconvex lens L 3 4, a biconcave lens L 3 5 toward the non-spherical convex surface facing the reticle side, a convex surface facing the reticle side and a positive meniscus lens L 3 6, an aperture stop aS, biconvex lens L 3 7 having its non-spherical convex surface facing the reticle side, biconvex lens L 3 8 towards the non-spherical convex surface facing the wafer side, a biconvex lens L 3 9, that consists of a positive meniscus lens L 3 1 0 toward the aspheric concave surface facing the wafer side, biconvex lens L 3 1 1 Tokyo. The lens L 3 1~L 3 1 1 are arranged in order from the upper side in the drawing (reticle side) along the second optical axis AX 2 of the vertical in FIG.

The first imaging optical system G 1 and the optical path between the second imaging optical system G 2, along the first imaging optical system G 1 side in the traveling direction of the light, the first imaging a positive meniscus lens L 4 1 with a concave surface facing the optical system G 1 side, a first field composed of partial lens L 4 2 Metropolitan positive meniscus lens having a convex surface directed toward the first imaging optical system G 1 side lens is disposed. That is, partial lens L 4 2 of the positive meniscus lens L 4 1 and the positive meniscus lens is the left side in the figure along a first optical axis AX 1 are arranged in this order.

Here, a positive meniscus lens L 4 1 is a positive meniscus lens L 1 1 and the same lens, both pass through the reflected light from the incident light and the second concave reflecting mirror CM 2 to the second concave reflection mirror CM 2 make. Partial lens L 4 2 positive meniscus lens, without having to go to pass incident light to the second concave reflecting mirror CM 2, in order to pass only the light reflected from the second concave reflection mirror CM 2, a positive meniscus lens a has a partially cut away shape.

Further, a second imaging optical system G 2 is in the optical path between the third image-forming optical system G 3, in order from the reticle side, biconvex lens L 5 1 toward the non-spherical convex surface to the reticle side and a positive meniscus lens L 5 2 with a convex surface facing the reticle side, a second field lens is arranged which is composed of a biconvex lens L 5 3 Metropolitan toward an aspheric convex surface on Les chicle side. The lens L 5 1 to L 5 3 are the upper side in the drawing along the second optical axis AX 2 (reticle side) are arranged in this order.

Thus, in the first embodiment, light from the reticle R after reflected by the first plane reflecting mirror M 1, via a positive meniscus lens L 1 1 and a biconcave lens L 1 2, the second concave reflecting mirror CM incident on the 2. The light reflected by the second concave reflecting mirror CM 2 forms a first intermediate image of the reticle pattern in the vicinity of the first field lens (L 4 1, L 42). Light from the first intermediate image formed in the vicinity of the first field lens (L 4 1, L 42) via a negative Meni Sukasurenzu L 2 1, incident on the third concave reflector CM 3.

The light reflected by the third concave mirror CM 3 through the negative meniscus lens L 2 1, is incident on the fourth plane reflecting mirror M4. The light reflected by the fourth plane reflecting mirror M4 forms a second intermediate image of Rechiku Le pattern in the vicinity of the second field lens (L 5 1~L 5 3). Light from the second intermediate image formed in the vicinity of the second field lens (L 5 1~ L 5 3) are each lens L 3 1 to L 3 1 1 constituting the third imaging optical system G 3 through it, to form a final image of Rechiku Le pattern on the wafer W.

The following table (2), supra Various values ​​of the catadioptric optical system according to a second embodiment the gel.

(Table 2)

(Main Specifications) λ = 1 5 7. 6 nm

β = 1 Z 5

NA = 0. 84 5

A = 2 0 mm

B = 1 0 0 mm

LX = 2 2 mm

LY = 5. 5 mm

(The specifications of the optical members in the original)

Surface number rdn

(Reticle plane) 290.027792

1 oo - 10.000000 (first plane reflecting mirror M l)

2 -375.77476 -70.000000 1.560000 (lens 1 1)

3 -8471.57979 -571.612419

4 880.34723 -20.000002 1.560000 (lens 1 2)

5 -1526.15631 - 20.000068

6 430.44124 20.000068 (second concave reflecting mirror CM2)

7 -1526.15631 20.000002 1.560000 (lens 1 2)

8 880.34723 571.612419

9 -8471.57979 69.999999 1.560000 (lens 1)

10 -375.77476 1.000002

11 392.76058 40.629139 1.560000 (lens 42) 12 1108.55246 695.632956

13 -228.90899 1.560000 (lens 2 1) 14 -747.58067 20.000181

15 -395.97377 -20.000181 (third concave reflector CM 3)

16 -747.58067 -20.000000 1.560000 (lens 2 1) 17 -228., 90899 -664.125014

18 oo 200. 000000 (Fourth plane reflecting mirror M4) o 1 丄, Bruno C:

D Otsu Λ) Π: Q o 丄 Roh 6 Q Otsu 9,) Q 6 Q ヽ) o /!,

32 -208. .61721 43.802275

33 * -362. .74483 20.000000

34 705. .62394 1.145699

35 210, .45845 20.000001 (], Ma ,, Ding ^ f)

36 348. .14561 29.558007

37 oo 8. 302787, |? For Li o Roh

38 * 348.07912 36.473270 (lens L 3 7)

39 -364 .89841 1.000000

40 246. • 94105 53. 921552 (Lens L 3 8)

41 * -323 .09677 5.937773

42 778 - 36 526 29.012042 (lens L 3 9)

43 -451 .33562 1.000000 44 187.68025 25.248610 1.560000 (lens L 3 1 0) 45 * 221.00795 16.525885

46 109.74451 70.000000 1.560000 (lens L 3 1 1) 47 -777.78439 6.000000

(© E octahedral)

(Aspherical data)

1 9 side

κ = 0. 0 0 0 0 0 0

C 4 = - 0. 6 6 8 9 2 9 X 1 CT 8 C 6: 0. 4 7 9 3 9 7 X 1 0- 13

C s = - 0. 6 7 3 1 3 2 X 1 0 -18 c 10 0. 1 0 6 1 4 0 X 1 0- 22

2 three-sided

κ = 0 0 0 0 0 0 0

C 4 = one 0 1 3 2 9 84 X 1 0- 7 C - 0 - 1 7 7 7 8 9 X 1 0 - '3

C 8 = 0 3 3 7448 X 1 0 -17 c 10 - 0. 8 0 7 3 0 2 X 1 0 "22

2 7 surface

0 0 0 0 0 0 0

C 0. 8 0 3 3 3 6 X 1 0- 7 C 0. 1 46 0 6 1 X 1 0- 11

C 8 = 0. 1 1 4 8 2 0 X 1 0 10- 0. 3 4 9 7 7 9 X 1 0 one 20

3 plane 0

κ = 0 0 0 0 0 0 0

C 4 = one 0 1 8 3 8 4 1 X 1 0- 6 C 6: 0. 7 3 1 6 7 1 X 1 0 - "

C 8 = - 0 4 9 5 1 8 9 X 1 0 "15 C l0: 0. 3 3 5 5 3 2 X 1 0- 19 3 3 surface

κ = 0 0 0 0 0 0 0

C one 0 5 1 343 3 X 1 0- 7 C f- - 0. 3 6 9 5 4 3 X 1 0 ""

C R = - 0. 8 9 9 1 5 5 X 1 0 - 16 C 10: - 0. 4 3 3 2 6 1 X 1 0- 20

3 eighth surface

K = 0 0 0 0 0 0 0

C 4 = - 0 4 3 8 0 7 8 X 1 0- 7 C 6: 0. 442 8 27 X 1 0 - 12

C 8 = - 0 5 6 2 6 4 7 X 1 0 - 17 C 10: 0. 4 9 9 7 6 1 X 1 0 - 22

4 1 side

K = 0 0 0 0 0 0 0

C 0. 2 642 2 5 X 1 0- 7 C fi = 0. 2 2 4 9 6 5 X 1 0 -

C s = 0. 2 1 1 4 7 8 X 1 0 "l6 C 10: 0. 2 3 5 5 3 8 X 1 0 - 2I

4 5-sided

K = 0. 0 0 0 0 0 0

C 0 48 1 9 54 X 1 0- 7 C 6 0. 4 1 9 2 6 6 X 1 0- "

C s = 0 1 2 1 1 5 2 X 1 0 - '5 C 10 0. 3 4' 4 8 1 1 X 1 0 - 20 FIGS. 8 and 9, the catadioptric optical system according to the second embodiment the lateral aberration is shown to view. In the aberration diagrams, Y represents the image height (mm). As is apparent from the aberration diagrams, similarly in the first embodiment in the second embodiment, for a wavelength width of 1 5 7. 6 nm ± 0. 4 pm exposure light, that is, the center wavelength of 1 5 7 . 6 with respect to the F 2 laser beam of half width 0. 7 pm at 11111, it can be seen that the chromatic aberrations are satisfactorily corrected. Further, spherical aberration, coma, astigmatism, distortion (distortion aberration) is corrected in a good good to a state nearly no aberration, it was confirmed that an excellent image forming performance.

As described above, in each embodiment described above, with respect to the center wavelength of 1 5 7. Of 6 nm F 2 laser light 0. 8 4 while securing a large image-side NA of 5, the chromatic aberration on the wafer W various aberrations including sufficiently corrected radius it is possible to secure the image circle of 2 0 mm. Te the month, in each embodiment, after securing the 2 2 mm X 5. 5 mm sufficiently large rectangular effective exposure region, 0. 1 m as possible out to achieve the following high resolution . Then, in the wafer W, for example, each exposure area having a size of 2 2 mm x 3 3 mm, it is possible to transfer the pattern of the reticle R with high accuracy by scanning exposure. In the embodiments described above, it is possible to ensure a long wafer side working distance ten minutes to about 6 mm. In the first embodiment, the diameter of the two concave reflection mirror CM 1 and CM 3 is not less 3 3 5 mm or less, the two largest of the lens effective diameter (diameter) is at 3 3 5 mm or less, the effective diameter of the other major part of the lens is less than 2 4 0 mm. On the other hand, in the second embodiment, the diameter of the two concave reflection mirror CM 1 and CM 3 are less 3 4 0 mm, the two biggest lens effective diameter (diameter) is not more than 3 4 0 mm, the effective diameter of the other major part of the lens is less than 2 3 0 mm. Thus, in each embodiment, by suppressing the increase in size of the concave reflecting mirror or a lens, size of the optical system is achieved.

Furthermore, in the above embodiments, while an optical system 3 Kaiyuizo scheme, the number of lenses is very small configuration (a 1 nine in the first embodiment, 1 eight in the second real 施例) It has become. In the optical system using the F 2 laser beam, because good good antireflection code Bok can not be obtained, it tends to cause the Oite light loss and the lens surface number of lenses is large. In this respect, in the above embodiments, fewer lenses number, that has composition to suppress the amount of light loss at the lens surface.

Furthermore, the distance of the object plane in the first embodiment and (reticle plane) and image plane (wafer surface) is about 1. 5 m, the distance between the object plane and the image 'plane in the second embodiment about 1. is 3 m. Thus, in each embodiment, since the distance between the object plane and the image plane is kept small, to reduce the size of the high-performance, high-precision optical system can and the realization child, further device can. In each real 施例 above, the number of aspherical introduced also has a very small configuration (eight in each Example).

In the above exposure apparatus illuminates the reticle (mask) by the illumination optical system (illumination step), a pattern for transfer formed on the reticle is scanned and exposed onto a photosensitive substrate using a projection optical system (exposure step) it is thus possible to manufacture microdevices (semiconductor devices, imaging devices, liquid crystal display devices, thin-film magnetic heads, etc.). Hereinafter, by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the above exposure apparatus, the flowchart of FIG. 1 0 per example of a technique for obtaining a semiconductor device as a micro device reference to be explained.

First, in Step 3 0 1 1 0, a metal film is deposited on one lots wafer. In a next step 3 0 2, follower Torejisu Bok is applied to the metal film on each wafer in the lots. Then, in Step 3 0 3, using the above exposure apparatus, an image of the pattern on the reticle via the projection optical system, it is sequentially exposed and transferred to each shot area on each wafer in the lot Bok. Thereafter, Etsuchin in Step 3 0 4, after 1 lots of © E c on the follower Torejisu Bok developing is performed that, in step 3 0 5, the registry pattern on each wafer in the lot Bok as a mask by performing grayed, are formed in each shot area on the circuit pattern forces the wafer corresponding to the pattern on the reticle. Thereafter, by further including formation of circuit patterns Ray catcher above, Debai scan such as semiconductor devices are manufactured. According to the semiconductor device manufacturing method described above, it is possible to obtain good throughput of the semiconductor devices with extremely fine circuit patterns.

Further, in the above exposure apparatus, the plate (glass substrate) predetermined path evening on - down (circuit pattern, electrode pattern, etc.) by forming, it is also possible to obtain a liquid crystal display device as a micro device. Hereinafter, with reference to the flowchart of FIG. 1 1, it will be described an example of a method in this case. In Figure 1 1, in the pattern formation step 4 0 1, a photosensitive substrate transferring exposure (Regis I glass substrate coated) the pattern of the reticle using the above exposure apparatus, Tokoroiko lithography process is performed that. This photolithography step, the photosensitive substrate has a constant pattern place including a number of electrodes and others are formed. Thereafter, the exposed substrate is migrated developing step Etsu quenching step, by the respective steps such as the reticle separation step, is formed a predetermined pattern on a substrate, the evening next color fill one forming step 4 0 2 to.

Next, the color one filter one forming step 4 0 2, R (Red), G (Green), or B (B l ue) 3 single dot set corresponding to which a number of the matrix, or R, G, to form a color filter arranged in a plurality of horizontal scanning lines direction three stripes fill evening one set of B. Then, after the color one fill evening one forming step 4 0 2, the cell assembly step 4 0 3 is executed. Cells In assembling step 4 0 3, using the substrate, and evening color filter obtained in the color one filter one forming step 4 0 2, First with resulting et a predetermined pattern in the pattern forming step 4 0 1 crystal panel assembling (liquid crystal cell). In the cell assembly step 4 0 3, for example, liquid crystal is injected between the color filter obtained in the substrate and the color filter type forming step 4 0 2 having a predetermined pattern obtained in the pattern forming step 4 0 1 Te, manufacturing the liquid crystal panel (liquid crystal cell).

Subsequent module assembly step 4 0 4, an electric circuit for display operation of the assembled liquid crystal panel (liquid crystal cell), to complete the liquid-crystal display device by attaching the respective parts such as the backlight. According to the manufacturing method of the liquid crystal display device described above, it is possible to obtain good throughput Bok a liquid crystal display device with extremely fine circuit patterns.

In the above exposure apparatus, supplies light of 1 5 7.6 11 111 wavelength? Although using two laser, without being limited thereto, for example, wavelength 2

4 8 nm of K r F excimer laser or a wavelength 1 9 3 nm of the supplied A r F excimer laser or a wavelength 1 2 6 nm in the use of such A r 2, single THE supplies optical light supplies light It can also be.

Further, in the above exposure apparatus, the invention is applied to a projection optical system of a scanning exposure type exposure apparatus, without being limited thereto, the present invention is the projection optical system of the one-shot exposure type exposure apparatus application or the present invention may be or applied to a general image forming optical system other than the projection optical system of the exposure apparatus.

As described above, in the catadioptric optical system of the present invention, because it has a less simple construction distances are small and the number of lenses between the object plane and the image plane, was suppressed better light loss in lens surface performance in it is possible to realize a high-precision optical system, for example the wavelength can be achieved 0. 1 xm following high resolution with light vacuum ultraviolet wavelength range of less than 1 8 0 nm. Also, For example other to secure the position for installing the effective aperture stop, ensuring a sufficiently long Wa one king distance, and the size of the concave reflecting mirror suppression Ete it is possible to reduce the size of the optical system it can.

Further, by applying the catadioptric optical system of the present invention to the projection optical system of the exposure apparatus, for example, a wavelength with less of the exposure light 1 8 0 nm, 0. 1 ^ am good under the following high resolution it is possible to perform the projection exposure. Further, by performing a good projection exposure with catadioptric optical system using equipped with an exposure apparatus as the projection optical system was example, if 0. 1 / ^ m The following high resolution of the present invention, highly accurate micro it is possible to produce the device.

Claims

The scope of the claims
1 - at least one concave reflecting mirror and having at least one plane reflecting mirror, the first imaging optical system for forming a first intermediate image of the first surface based on light from the first surface ,
At least it has a one of at least the concave reflecting mirror one plane reflecting mirror, the second to form a second intermediate image of the first surface based on the light through the first imaging optical system an imaging optical system,
Characterized in that it comprises a third imaging optical system of refraction type for forming a final image of the first surface based on light passing through said second imaging optical system on the second surface catadioptric system.
2. All of the optical member to remove all of the optical members and the plane reflecting mirror of the second imaging optical system except the plane reflecting mirror of the first imaging optical system, a single extending straight first disposed along the first optical axis,
The third imaging all optical members of the optical system is disposed along a second optical axis of a single extending straight so as to be orthogonal to the first optical axis,
Light from the first surface, sequentially through the one plane reflecting mirror Contact and one concave reflecting mirror in said first imaging optical system, to form the first intermediate image,
Light through the first imaging optical system, said one plane reflecting mirror of the second imaging optical system and sequentially through the one concave reflecting mirror, and characterized that you form the second intermediate image catadioptric optical system according to claim 1.
3. The first imaging optical system, a catadioptric system of the placing serial to claim 2, characterized in that it comprises a single negative lens component even without least disposed immediately in front of the concave reflecting mirror.
4. The second imaging optical system, a catadioptric optical system according to claim 2 or 3, characterized in that it has a negative lens component even without least disposed immediately before the one of the concave reflector.
5. According to any one of claims 1 to 3, characterized in that it is arranged a field lens in an optical path between the first imaging optical system and the second imaging optical system catadioptric system.
6. Catadioptric optical system according to claim 4, characterized in that it is arranged a field lens in an optical path between the first imaging optical system and the second imaging optical system.
7. The at least one lens of said Fi one Rudorenzu which is placed in the optical path between the first imaging optical system and the second imaging optical system, before Symbol of the first imaging optical system catadioptric of claim 5, characterized in that it comprises a partially notch him shape in order to pass only light reflected from said concave reflection mirror without passing through the light incident to the concave reflecting mirror Optical system. 8 - the at least one lens of the placement by said field lens in an optical path between the first imaging optical system and the second imaging optical system, before Symbol said first imaging optical system catadioptric according to claim 6, characterized in that it comprises a partially notch him shape in order to pass only light reflected from said concave reflection mirror without passing through the incident light on the concave reflecting mirror system.
9.1 the at least one lens of the placement by said field lens in an optical path between the first imaging optical system and the second imaging optical system, before Symbol said first imaging optical system catadioptric optical system according to claim 5, characterized in that it is formed so as together to pass reflected light from the incident light and the concave reflecting mirror to the concave mirror.
1 0. The at least one lens of the arranged the field lens in an optical path between the first imaging optical system and the second imaging optical system, said concave surface of said first imaging optical system catadioptric optical system according to claim 6, characterized in that it is formed both to pass reflected light from the incident light and the concave reflecting mirror to the reflecting mirror.
1 1. The at least one lens of said Fi one Rudorenzu disposed in the optical path between the first imaging optical system and the second imaging optical system, said first imaging optical system catadioptric optical system according to claim 7, characterized in that it is formed both to pass reflected light from the incident light and the concave reflecting mirror to the concave mirror.
1 2. The at least one lens of said Fi one Rudorenzu disposed in the optical path between the first imaging optical system and the second imaging optical system, said first imaging optical system catadioptric optical system according to claim 8, characterized in that it is formed so as together to pass reflected light from the incident light and the concave reflecting mirror to the concave mirror.
1 3. According to any one of claims 1 to 3, characterized in that it is arranged a field lens in an optical path between the second imaging optical system and the third imaging optical system catadioptric optical system.
1 4. The catadioptric optical system of the placing serial to claim 4, characterized in that the field lens is arranged in the optical path between the second imaging optical system and the third imaging optical system. 1 5. The catadioptric optical system of the placing serial to claim 5, characterized in that the field lens is arranged in the optical path between the second imaging optical system and the third imaging optical system.
1 6. The catadioptric optical system of the placing serial to claim 6, characterized in that the field lens is arranged in the optical path between the second imaging optical system and the third imaging optical system.
1 7. The catadioptric optical system of the placing serial to claim 7, characterized in that it is arranged a field lens in the optical path between the second imaging optical system and the third imaging optical system.
1 8. The catadioptric optical system of the placing serial to claim 8, characterized in that the field lens is arranged in the optical path between the second imaging optical system and the third imaging optical system.
1 9. The catadioptric optical system of the placing serial to claim 9, characterized in that it is arranged a field lens in the optical path between the second imaging optical system and the third imaging optical system. 2 0. Catadioptric optical system according to claim 1 0, characterized in that it is arranged a field lens in an optical path between the second imaging optical system and the third imaging optical system.
2 1. Catadioptric optical system according to claim 1 1, characterized in that it is arranged a field lens in an optical path between the second imaging optical system and the third imaging optical system.
2 2. Catadioptric optical system according to claim 1 2, characterized in that it is arranged a field lens in an optical path between the second imaging optical system and the third imaging optical system. 2 3. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a reflection refractive optical system according to any one of 1 to 3. 2 4. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a catadioptric optical system according to 4. 2 5. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface 5 it and a catadioptric optical system according to exposure apparatus according to claim. 2 6. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a catadioptric optical system according to 6.
2 7. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a catadioptric optical system according to 7.
2 8. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a catadioptric optical system according to 8.
2 9. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus characterized by comprising a catadioptric optical system according to 9.
3 0. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 0.
3 1. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 1.
3 2. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 2.
3 3. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 3.
3 4. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 4.
35. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 5.
3 6. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 6.
3 7. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 7.
3 8. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus according to Toku徵 that the example Bei a catadioptric optical system according to 1 8.
3 9. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 1 9.
4 0. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 2 0.
4 1. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 2 1.
4 2. The first surface illumination system for illuminating a mask set on, claims for forming an image of a pattern formed on the mask onto a photosensitive substrate set on the second surface exposure apparatus, characterized in that it e Bei a catadioptric optical system according to 2 2.
PCT/JP2002/005259 2001-06-14 2002-05-30 Catadioptric system and exposure system provided with the system WO2002103431A1 (en)

Priority Applications (2)

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JP2001179579A JP4780364B2 (en) 2001-06-14 2001-06-14 Catadioptric optical system and exposure apparatus provided with the optical system

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