WO2002091807A1 - High flux, high energy photon source - Google Patents
High flux, high energy photon source Download PDFInfo
- Publication number
- WO2002091807A1 WO2002091807A1 PCT/GB2002/002063 GB0202063W WO02091807A1 WO 2002091807 A1 WO2002091807 A1 WO 2002091807A1 GB 0202063 W GB0202063 W GB 0202063W WO 02091807 A1 WO02091807 A1 WO 02091807A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source
- excitation
- source material
- ionisation
- laser
- Prior art date
Links
- 230000004907 flux Effects 0.000 title description 5
- 230000005284 excitation Effects 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 41
- 238000005086 pumping Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Definitions
- the invention relates to a high flux, high energy photon source, in particular a pulsed plasma source.
- DPP discharge produced plasma
- LPP laser produced plasma
- Debris is a significant problem in both LPP and electrical/magnetic excitation systems due to the need for a large and expensive collection optic to share the vacuum space in order to collect a high solid angle of emission.
- Primary debris from the plasma or secondary debris from chamber components significantly reduce the useable lifespan of such an optic.
- Heat loading is a problem in that the chamber components will distort and possibly be damaged if sufficient cooling is not available.
- the large collection optic has a very precise shape, and heating easily distorts it beyond usability and/or causes direct damage to the coating.
- One known electrical/magnetic excitation system described in US 6,084,198 comprises an electrode column in which a plasma sheath is formed.
- the plasma sheath exits the column and forms a pinch at the end. Gas at the pinch generates EUN photons.
- the arrangement requires close contact between the working electrodes and the working gas with concomitant issues of electrode damage.
- it is difficult to control plasma parameters such as size, shape and density and thereby maximise the conversion of electrical energy to the required wavelength of EUN radiation.
- US 6,084,198 further discloses a plasma initiator in the form of spark plugs surrounding the electrode column, but this arrangement is inflexible and does not allow much variation in the operating parameters of the working gas/gasses.
- a further problem is that the spark plugs themselves are exposed to the plasma created and that additional components can be required to avoid damaging re-strikes.
- FIG. 1 A known arrangement is illustrated in Fig. 1 and designated generally 10.
- a gas preferably an inert gas such as Xenon is fed at high pressure through nozzle 12.
- the gas expands supersonically into a cone 14 on exiting the nozzle 12 and is subjected to excitation by a laser 16.
- a plasma is created which emits EUN radiation collected by collector 20 which may for example be a parabolic reflector and channelled therefrom for the desired use, for example in semiconductor lithography.
- the use of a suitably shaped nozzle and supersonic beam of gas produces a high gas density.
- an inert gas such as Xenon
- clusters of gas atoms are formed which helps to maintain a high local gas density and it thought to assist EUN generation.
- the laser 16 Because of the rapid expansion of the gas cone 14 the laser 16 must be focused as close as possible to the nozzle 12 to maintain an acceptable energy density in the plasma. As a result the nozzle 12 is at risk of damage because of its proximity to the plasma, and the arrangement as a whole is physically constrained.
- gas density is not constant across the cone 14 as a result of which the laser pulse may be absorbed by the lower density periphery of the cone, providing unsatisfactory penetration to the high density centre of the source gas cone.
- pre-ionisation is known to allow creation of a more stable and well defined plasma as well as enhanced control of the initial conditions, in particular reducing fluctuation between pulses and enhancing dose control.
- pre-ionisation electrodes are exposed to potentially damaging conditions.
- spatially smooth pre- ionisation is a necessary condition to avoid hot or cold spots in the final plasma. Such variations in temperature reduce the efficiency for emission in the required spectral bandwidth and therefore limit the effectiveness of the device.
- a high energy photon source comprising a source material emitter arranged to emit a stream of source material, an excitation component downstream thereof arranged to create a plasma in the source material for emission of high energy photons and an apertured stop provided therebetween.
- the use of the apertured stop for example in the form of a skimmer plate, gives rise to numerous advantages. Because the apertured stop collimates the beam, the debris created is greatly restricted and also channelled away in the coUimation direction from the excitation component and collector i.e. coUimation of the molecular beam is found to restrict the flow of debris in the chamber to a narrow path. In turn this allows more flexibility with the excitation component location and geometry.
- the excitation component comprises an electrical/magnetic excitation component in which case the coil, plate or electrode configuration can be easily varied.
- the emitter emits source material at a supersonic velocity, yet further improving the channelling away of the beam from the excitation component as it takes place at high speed.
- EUN flux generation can be tuned at will into considerably more efficient conditions.
- the volume/cross-section, velocity and density of the target gas stream can be varied over an extremely wide range to allow optimal efficiency of conversion to EUN radiation by altering the skimmer plate aperture dimensions appropriately.
- variable geometry also allows the size and shape of the EUN emitting volume to be controlled so as to match the requirements of the large collection optic, and the lithographic projection system which receives light from said optic.
- the material emitter which may be a nozzle
- excitation components are provided in separate chambers divided by the apertured stop. Accordingly the nozzle side of the chamber can be maintained at a high pressure and the pumping side at a very low pressure to restrict self absorption without the need for differential pumping. Even further, a greater proportion of the gas can be recirculated and recycled. Yet further, the gas beam provides a "sharp edge", having a fairly constant density across its cross-section. This is particularly advantageous in an alternative embodiment in which the excitation component comprises a laser pulse component as it ensures that laser power is not dissipated in a low density outer portion of the molecular beam.
- the excitation component does not have to be close to the nozzle to pump gas at an appropriate density - because the gas stream is collimated the excitation component can be located further downstream. This in turn further enhances flexibility in design and configuration of the components.
- the system further comprises a laser pre-ionisation element arranged to pre-ionise the source material stream prior to excitation by the excitation component.
- the laser pre-ionisation element may pre-ionises the source material stream at a location upstream of the excitation component excitation region or at a point in time prior to, or during, excitation by the excitation component, preferably at the excitation component excitation region.
- Laser pre- ionisation is effective on a wide range of materials, and can easily and evenly pre- ionise gas at any density again enhancing the flexibility of the system.
- the pre-ionisation phase can be temporally and physically very closely defined allowing the creation of conditions that are optimal for subsequent excitation by electric or magnetic means and in particular fine control of the pre-ionisation state, density and shape and pre-plasma temperature.
- the laser focussing optic can be spaced further from the beam than a pre-ionisation electrode, so reducing its exposure to the harsh environment created by the plasma.
- the coupling conditions in an electrical/magnetic pumping scheme are especially suited to the pre-ionisation conditions generated by laser pre-ionisation. Because the laser itself is non-intrusive the pre-ionisation pulse can easily be focused at the same physical location as the electrical/magnetic excitation which then effectively pumps the rapidly expanding pre-plasma created by the laser pre-ionisation. A particular advantage of this is that pre-ionisation of the target in the correct physical location can encourage the main discharge from electrodes to travel directly to the plasma.
- a high energy photon source comprising a source material emitter arranged to emit a stream of source material, an electrical or magnetic excitation component downstream thereof arranged to create a plasma in the source material for emission of high energy photons and a laser pre-ionisation element arranged to pre-ionise the source material stream prior to excitation by the excitation component.
- a high energy photon source comprising a source material emitter arranged to emit a stream of source material at supersonic velocity and an electrical or magnetic excitation component downstream thereof arranged to create a plasma in the source material for emission of high energy photons.
- Fig. 1 is a schematic view of a known LPP high energy photon source
- Fig. 2a is a schematic view of an improved high energy photon source
- Fig.2b is a schematic view of an electrical/magnetic high energy photon source according to the present invention.
- Fig. 2c is a schematic view of an alternative preferred electrical/magnetic high energy photon source according to the present invention
- Fig.3a shows a first pre-ionisation scheme
- Fig.3b shows a second pre-ionisation scheme
- Fig.3c shows a third pre-ionisation scheme
- Fig. 4 is a schematic view of an alternative electrical/magnetic high energy photon source according to the present invention.
- Fig. 5. is a schematic view of an LPP high energy photon source according to the present invention.
- Fig. 6 is a plot of EUN conversion efficiency obtained according to the present invention.
- Fig. 2a relates to an improved EUN source designated generally 10.
- Xenon is fed at high pressure through nozzle 12.
- the gas expands supersonically into a cone 14 on exiting the nozzle 12 and is subjected to electric/magnetic excitation by electrodes or coils 16 which may in practice include induction coils or capacitative plates.
- the gas stream is pre-ionised by pre-ionisation coils 18.
- the use of a supersonic molecular beam via a nozzle with electrical/magnetic pumping and/or pre-ionisation formed by discharge, capacitative or inductive excitation of the plasma and/or pre-plasma takes advantage of the high translational velocity of the gas jet to remove debris from critical regions of the chamber and to avoid it impinging on for example the collection mirror.
- the gas conditions are only suitable for electrical ionisation over a relatively narrow range of gas densities and geometries, therefore limiting the range of conditions applicable for any subsequent major energy deposition, and potentially restricting the parameterspace for the plasma to lower efficiency conditions.
- the arrangement is provided in a chamber 20 and a pump 22 is provided to allow differential pumping, but with disadvantages in the level of pumping required to obtain an acceptable pressure differential across the chamber.
- a preferred high energy photon source includes the additional components of an apertured stop in the form of a skimmer plate 26 comprising a partition across chamber 22 and a skimmer orifice 28 acting as a collimator having a converging frusto-conical flange 28a on its downstream face.
- the gas cone 14 is incident on the skimmer plate and a central column molecular beam 30 having a lower angle of divergence than gas cone 14 and preferably being substantially parallel passes through the orifice 28, the remainder of the gas being recirculated.
- the beam 30 is then pre-ionised by laser 32 and a plasma is generated downstream between coils/electrodes 34.
- the plasma produces an EUN flux as described above which is collected by collector 20.
- the nozzle side SI of the chamber 22 is maintained at a high pressure and the pumping side S2 at a very low pressure to restrict self absorption via a pump (not shown).
- the coUimated beam allows improved efficiency of plasma generation and reduced debris and self- absorption, as discussed above.
- the laser pre-ionisation pulse is focussed at the same physical location 33 as the subsequent excitation pulse or field.
- the pre-ionisation pulse may precede the excitation pulse by a pre-determined period so that the two steps are temporally rather than spatially separated.
- the timing of the system is optimised such that maximum coupling is achieved by the excitation component with the rapidly expanding pre-plasma generated by laser pre-ionisation. This delay might even be reversed with the electrical switching starting just before the laser. This allows time for the electric, magnetic field to build to a suitable level before creating the receiving plasma.
- the size and density and ionisation state of the pre- plasma formed by laser pre-ionisation can of course be controlled by appropriate optics.
- Figs. 3a to 3c Three exemplary pre-ionisation schemes are shown in a beam 30.
- Fig. 3a the laser is focussed on a peripheral part 31a of the beam.
- Fig. 3b the laser is focussed across the beam cross-section, in an essentially circular spot, and in Fig. 3c a linear portion of the beam is pre-ionised.
- the pre- ionisation pulse will be timed such that the pre-ionised portion of the beam will reach the main electrodes/coils 34 at the moment these are energised for optimum plasma creation efficiency.
- Fig.4 a further variant is shown in Fig.4 in which the skimmer plate is dispensed with and laser pre-ionisation is provided using laser 38 upstream of electrical/magnetic excitation coils/electrodes 14 or (not shown) spatially local as in Fig. 2c, providing once again the advantages of laser pre-ionisation discussed above. It will be appreciated, however, that the system will also operate with a skimmer plate but no pre-ionisation.
- An alternative, LPP configuration according to the present invention is shown in Fig.5. In this arrangement the electrodes 34 are replaced by a laser pump 36 together with appropriate optics (not shown), as a result of which pre- ionisation is not required in the preferred embodiment. It will be appreciated that the LPP pumping scheme shown in Fig. 5 can equally be replaced with an electrical/magnetic pump such as that shown in Figs. 2a to 2c.
- the source gas is preferably an inert gas such as Xenon although any other appropriate gas may be used, together with a buffer gas such as Helium. According to the best mode presently contemplated the gas is introduced at a pressure in the range 1-50 bar through a nozzle aperture in the range 0.1 - 0.4mm into the high pressure side SI of the chamber 22 which is maintained at a pressure 0.02 - 100 mbar.
- the skimmer aperture is in the range 0.1 to 20mm with flange angle between 2-45°.
- the coUimated beam 30 enters the low pressure side S2 of the chamber 22 at a
- the various pressures can be maintained using pumps of any appropriate kind.
- the electrodes/coils used can be of any suitable type or configuration suitable for discharge, capacitative or inductive heating/excitation of the plasma.
- the lasers used either in pre-ionisation or for LPP can be of any appropriate type, for example gas lasers, excimer lasers or solid state lasers.
- the pre-ionisation laser pulse preferably has a rise time in the range 0.2ns - 100 ns and pulse duration between Ins and 1000ns. In the LPP scheme the laser preferably has a repetition rate in the range 1-lOOkHz.
- the skimmer plate can be used in either the electrical/magnetic excitation or LPP scheme with or without pre-ionisation, or indeed with only electrical pre-ionisation, or the skimmer plate can be dispensed with under laser pre-ionisation.
- Any appropriate gas can be used and need not necessarily be inert. Indeed the system could be applied to a liquid source material beam; although beam coUimation may be less of an issue in such circumstances.
- the discussion above is directed to use of a skimmer plate, the use of any appropriate apertured stop or collimating means is contemplated.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02720308A EP1386525A1 (en) | 2001-05-08 | 2002-05-03 | High flux, high energy photon source |
JP2002588731A JP2004531861A (en) | 2001-05-08 | 2002-05-03 | High flow rate and high energy photon source |
US10/703,923 US7339181B2 (en) | 2001-05-08 | 2003-11-07 | High flux, high energy photon source |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0111204.4 | 2001-05-08 | ||
GBGB0111204.4A GB0111204D0 (en) | 2001-05-08 | 2001-05-08 | High flux,high energy photon source |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/703,923 Continuation US7339181B2 (en) | 2001-05-08 | 2003-11-07 | High flux, high energy photon source |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002091807A1 true WO2002091807A1 (en) | 2002-11-14 |
Family
ID=9914206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2002/002063 WO2002091807A1 (en) | 2001-05-08 | 2002-05-03 | High flux, high energy photon source |
Country Status (5)
Country | Link |
---|---|
US (1) | US7339181B2 (en) |
EP (1) | EP1386525A1 (en) |
JP (1) | JP2004531861A (en) |
GB (1) | GB0111204D0 (en) |
WO (1) | WO2002091807A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10261803A1 (en) * | 2002-12-19 | 2004-07-15 | Infineon Technologies Ag | Radiation source generating extreme ultraviolet (EUV) radiation for lithographic technique in forming structure of dimensions less than 70 nm in semiconductor by plasma, using magnetic valve and field for enveloping plasma |
WO2005004555A1 (en) * | 2003-06-27 | 2005-01-13 | Commissariat A L'energie Atomique | Method and device for producing extreme ultraviolet radiation or soft x-ray radiation |
DE10337667A1 (en) * | 2003-08-12 | 2005-03-24 | Jenoptik Mikrotechnik Gmbh | Plasma radiation source and arrangement for generating a gas curtain for plasma radiation sources |
US8147805B2 (en) | 2005-01-05 | 2012-04-03 | The Board of Regents of The University of T exas System | Conjugates for dual imaging and radiochemotherapy: composition, manufacturing, and applications |
DE112007000821B4 (en) | 2006-03-31 | 2022-08-18 | Energetiq Technology Inc. | Laser powered light source |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10326279A1 (en) * | 2003-06-11 | 2005-01-05 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Plasma-based generation of X-radiation with a layered target material |
JP2005276671A (en) * | 2004-03-25 | 2005-10-06 | Komatsu Ltd | Lpp type euv light source apparatus |
DE102004042501A1 (en) * | 2004-08-31 | 2006-03-16 | Xtreme Technologies Gmbh | Device for providing a reproducible target current for the energy-beam-induced generation of short-wave electromagnetic radiation |
TW200808134A (en) * | 2006-07-28 | 2008-02-01 | Ushio Electric Inc | Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation |
JP5162113B2 (en) * | 2006-08-07 | 2013-03-13 | ギガフォトン株式会社 | Extreme ultraviolet light source device |
JP5454881B2 (en) * | 2008-08-29 | 2014-03-26 | ギガフォトン株式会社 | Extreme ultraviolet light source device and method for generating extreme ultraviolet light |
JP5448775B2 (en) * | 2008-12-16 | 2014-03-19 | ギガフォトン株式会社 | Extreme ultraviolet light source device |
JP2011054376A (en) * | 2009-09-01 | 2011-03-17 | Ihi Corp | Lpp type euv light source and generation method of the same |
JP2016519769A (en) * | 2013-04-01 | 2016-07-07 | ハーランド,ピーター | Radioisotope quasi-neutral plasma generation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998034234A1 (en) * | 1997-02-04 | 1998-08-06 | Northrop Grumman Corporation | Method and apparatus for producing extreme ultra-violet light for use in photolithography |
US6084198A (en) * | 1997-04-28 | 2000-07-04 | Birx; Daniel | Plasma gun and methods for the use thereof |
WO2001049087A1 (en) * | 1999-12-24 | 2001-07-05 | Koninklijke Philips Electronics N.V. | Method of generating euv radiation, method of manufacturing a device by means of said radiation, euv radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866296A (en) | 1981-10-15 | 1983-04-20 | Seiko Epson Corp | X-ray source unit |
US5086254A (en) | 1983-08-11 | 1992-02-04 | Varian Associates, Inc. | Microwave excited helium plasma photoionization detector |
EP0186491B1 (en) | 1984-12-26 | 1992-06-17 | Kabushiki Kaisha Toshiba | Apparatus for producing soft x-rays using a high energy beam |
CA1239486A (en) * | 1985-10-03 | 1988-07-19 | Rajendra P. Gupta | Gas discharge derived annular plasma pinch x-ray source |
JPH03102888A (en) | 1989-09-18 | 1991-04-30 | Toshiba Corp | X-ray generator |
US5577092A (en) | 1995-01-25 | 1996-11-19 | Kublak; Glenn D. | Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources |
SE510133C2 (en) | 1996-04-25 | 1999-04-19 | Jettec Ab | Laser plasma X-ray source utilizing fluids as radiation target |
JPH10221499A (en) | 1997-02-07 | 1998-08-21 | Hitachi Ltd | Laser plasma x-ray source and device and method for exposing semiconductor using the same |
US6031241A (en) | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
US6011267A (en) * | 1998-02-27 | 2000-01-04 | Euv Llc | Erosion resistant nozzles for laser plasma extreme ultraviolet (EUV) sources |
EP1068019A1 (en) | 1998-04-03 | 2001-01-17 | Advanced Energy Systems, Inc. | Energy emission system for photolithography |
FR2799667B1 (en) | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | METHOD AND DEVICE FOR GENERATING A DENSE FOG OF MICROMETRIC AND SUBMICROMETRIC DROPLETS, APPLICATION TO THE GENERATION OF LIGHT IN EXTREME ULTRAVIOLET IN PARTICULAR FOR LITHOGRAPHY |
US6973164B2 (en) * | 2003-06-26 | 2005-12-06 | University Of Central Florida Research Foundation, Inc. | Laser-produced plasma EUV light source with pre-pulse enhancement |
-
2001
- 2001-05-08 GB GBGB0111204.4A patent/GB0111204D0/en not_active Ceased
-
2002
- 2002-05-03 WO PCT/GB2002/002063 patent/WO2002091807A1/en active Application Filing
- 2002-05-03 JP JP2002588731A patent/JP2004531861A/en active Pending
- 2002-05-03 EP EP02720308A patent/EP1386525A1/en not_active Withdrawn
-
2003
- 2003-11-07 US US10/703,923 patent/US7339181B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998034234A1 (en) * | 1997-02-04 | 1998-08-06 | Northrop Grumman Corporation | Method and apparatus for producing extreme ultra-violet light for use in photolithography |
US6084198A (en) * | 1997-04-28 | 2000-07-04 | Birx; Daniel | Plasma gun and methods for the use thereof |
WO2001049087A1 (en) * | 1999-12-24 | 2001-07-05 | Koninklijke Philips Electronics N.V. | Method of generating euv radiation, method of manufacturing a device by means of said radiation, euv radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
Non-Patent Citations (1)
Title |
---|
BERGMANN K ET AL: "HIGHLY REPETITIVE, EXTREME-ULTRAVIOLET RADIATION SOURCE BASED ON A GAS-DISCHARGE PLASMA", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, vol. 38, no. 25, 1 September 1999 (1999-09-01), pages 5413 - 5417, XP000854494, ISSN: 0003-6935 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10261803A1 (en) * | 2002-12-19 | 2004-07-15 | Infineon Technologies Ag | Radiation source generating extreme ultraviolet (EUV) radiation for lithographic technique in forming structure of dimensions less than 70 nm in semiconductor by plasma, using magnetic valve and field for enveloping plasma |
WO2005004555A1 (en) * | 2003-06-27 | 2005-01-13 | Commissariat A L'energie Atomique | Method and device for producing extreme ultraviolet radiation or soft x-ray radiation |
US7619232B2 (en) | 2003-06-27 | 2009-11-17 | Xtreme Technologies Gmbh | Method and device for producing extreme ultraviolet radiation or soft X-ray radiation |
CN1820556B (en) * | 2003-06-27 | 2011-07-06 | 法国原子能委员会 | Method and device for producing extreme ultravoilet radiation or soft X-ray radiation |
DE10337667A1 (en) * | 2003-08-12 | 2005-03-24 | Jenoptik Mikrotechnik Gmbh | Plasma radiation source and arrangement for generating a gas curtain for plasma radiation sources |
JP2007502000A (en) * | 2003-08-12 | 2007-02-01 | イェーノプティーク ミクロテヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング | Plasma radiation source and apparatus for forming a gas curtain for a plasma radiation source |
US7328885B2 (en) | 2003-08-12 | 2008-02-12 | Xtreme Technologies Gmbh | Plasma radiation source and device for creating a gas curtain for plasma radiation sources |
JP4766695B2 (en) * | 2003-08-12 | 2011-09-07 | イクストリーメ テクノロジース ゲゼルシャフト ミット ベシュレンクテル ハフツング | Plasma radiation source, apparatus for generating gas curtain and gas jet vacuum pump |
DE10337667B4 (en) * | 2003-08-12 | 2012-03-22 | Xtreme Technologies Gmbh | Plasma radiation source and arrangement for generating a gas curtain for plasma radiation sources |
US8147805B2 (en) | 2005-01-05 | 2012-04-03 | The Board of Regents of The University of T exas System | Conjugates for dual imaging and radiochemotherapy: composition, manufacturing, and applications |
DE112007000821B4 (en) | 2006-03-31 | 2022-08-18 | Energetiq Technology Inc. | Laser powered light source |
DE112007003819B4 (en) | 2006-03-31 | 2024-05-16 | Energetiq Technology Inc. | Laser-driven light source |
Also Published As
Publication number | Publication date |
---|---|
US20070278429A9 (en) | 2007-12-06 |
JP2004531861A (en) | 2004-10-14 |
US7339181B2 (en) | 2008-03-04 |
EP1386525A1 (en) | 2004-02-04 |
US20060017023A1 (en) | 2006-01-26 |
GB0111204D0 (en) | 2001-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4555679B2 (en) | Method for producing X-rays or extreme ultraviolet rays and method for using the same | |
US7339181B2 (en) | High flux, high energy photon source | |
US6064072A (en) | Plasma focus high energy photon source | |
US6541786B1 (en) | Plasma pinch high energy with debris collector | |
JP4557904B2 (en) | Extreme ultraviolet (EUV) generator and method | |
JP4328784B2 (en) | Apparatus and method for generating extreme ultraviolet radiation | |
JP6408578B2 (en) | Extreme ultraviolet light source | |
KR20000062868A (en) | Plasma focus high energy photon source with blast shield | |
KR20100057037A (en) | System managing gas flow between chambers of an extreme ultraviolet(euv) photolithography apparatus | |
JP5183928B2 (en) | Methods and apparatus for generating EUV radiation and / or soft X-ray radiation in particular | |
KR101370615B1 (en) | Plasma light source system | |
US6888297B2 (en) | Method and apparatus for debris mitigation for an electrical discharge source | |
US5175757A (en) | Apparatus and method to enhance X-ray production in laser produced plasmas | |
EP1367445B1 (en) | Linear filament array sheet for EUV production | |
US6933515B2 (en) | Laser-produced plasma EUV light source with isolated plasma | |
US7075096B2 (en) | Injection pinch discharge extreme ultraviolet source | |
US20030053593A1 (en) | Capillary discharge source | |
US11086226B1 (en) | Liquid tamped targets for extreme ultraviolet lithography | |
US7492867B1 (en) | Nanoparticle seeded short-wavelength discharge lamps | |
TW569652B (en) | Method for producing radiation | |
Guo et al. | Vacuum spark point source for x-ray/EUV lithography | |
Endo | Laser-produced-plasma for EUV lithography | |
KR20010029769A (en) | Plasma focus high energy photon source with blast shield |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10703923 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002588731 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002720308 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2002720308 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 10703923 Country of ref document: US |