WO2002063691A3 - Active pixel cell with charge storage - Google Patents

Active pixel cell with charge storage

Info

Publication number
WO2002063691A3
WO2002063691A3 PCT/CA2002/000051 CA0200051W WO02063691A3 WO 2002063691 A3 WO2002063691 A3 WO 2002063691A3 CA 0200051 W CA0200051 W CA 0200051W WO 02063691 A3 WO02063691 A3 WO 02063691A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
pixel cell
transistor
active pixel
charge storage
source follower
Prior art date
Application number
PCT/CA2002/000051
Other languages
French (fr)
Other versions
WO2002063691A2 (en )
Inventor
Jaremi Witewski
Original Assignee
Symagery Microsystems Inc
Jaremi Witewski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/374Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/3745Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

A CMOS four-transistor active pixel cell (APC) for use in an image sensor array is described. It includes an additional PMOS transistor with in a standard three-transistor pixel cell. The PMOS transistor acts as a typical switch to either connect or disconnect the photodiode capacitance and the gate capacitance of the three-transistor pixel cell source follower, and further reduces the photo-current discharging of the gate capacitance during the storage time. This time is dependent on the physical characteristics of the source follower transistor.
PCT/CA2002/000051 2001-02-02 2002-01-17 Active pixel cell with charge storage WO2002063691A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US26560001 true 2001-02-02 2001-02-02
US60/265,600 2001-02-02

Publications (2)

Publication Number Publication Date
WO2002063691A2 true WO2002063691A2 (en) 2002-08-15
WO2002063691A3 true true WO2002063691A3 (en) 2002-10-10

Family

ID=23011115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2002/000051 WO2002063691A3 (en) 2001-02-02 2002-01-17 Active pixel cell with charge storage

Country Status (1)

Country Link
WO (1) WO2002063691A3 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7605940B2 (en) 1999-09-17 2009-10-20 Silverbrook Research Pty Ltd Sensing device for coded data
US8416468B2 (en) 1999-09-17 2013-04-09 Silverbrook Research Pty Ltd Sensing device for subsampling imaged coded data
US7296737B2 (en) * 2003-04-07 2007-11-20 Silverbrook Research Pty Ltd Shopping receptacle with in-built scales
KR100666697B1 (en) 2003-10-20 2007-01-09 주식회사 애트랩 Circuit of optic sensor
US7432968B2 (en) 2004-05-10 2008-10-07 Micron Technology, Inc. CMOS image sensor with reduced 1/f noise
US7193198B2 (en) 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11312797A (en) * 1998-04-27 1999-11-09 Natl Science Council Of Roc Active pixel image sensor
JP2000050163A (en) * 1998-06-27 2000-02-18 Hyundai Electronics Ind Co Ltd Image sensor with wide dynamic range
WO2001078150A1 (en) * 2000-04-07 2001-10-18 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Active cell with analog storage for a cmos technology photosensitive sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11312797A (en) * 1998-04-27 1999-11-09 Natl Science Council Of Roc Active pixel image sensor
JP2000050163A (en) * 1998-06-27 2000-02-18 Hyundai Electronics Ind Co Ltd Image sensor with wide dynamic range
WO2001078150A1 (en) * 2000-04-07 2001-10-18 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Active cell with analog storage for a cmos technology photosensitive sensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02 29 February 2000 (2000-02-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05 14 September 2000 (2000-09-14) *

Also Published As

Publication number Publication date Type
WO2002063691A2 (en) 2002-08-15 application

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