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WO2002063669A3 - Method and apparatus for two-step barrier layer polishing - Google Patents

Method and apparatus for two-step barrier layer polishing

Info

Publication number
WO2002063669A3
WO2002063669A3 PCT/US2001/050150 US0150150W WO2002063669A3 WO 2002063669 A3 WO2002063669 A3 WO 2002063669A3 US 0150150 W US0150150 W US 0150150W WO 2002063669 A3 WO2002063669 A3 WO 2002063669A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
substrate
barrier
layer
polishing
copper
Prior art date
Application number
PCT/US2001/050150
Other languages
French (fr)
Other versions
WO2002063669A2 (en )
Inventor
Lizhong Sun
Stan Tsai
Shijian Li
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation

Abstract

A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
PCT/US2001/050150 2000-10-27 2001-10-26 Method and apparatus for two-step barrier layer polishing WO2002063669A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US09/698,864 2000-10-27
US09698864 US6709316B1 (en) 2000-10-27 2000-10-27 Method and apparatus for two-step barrier layer polishing

Publications (2)

Publication Number Publication Date
WO2002063669A2 true WO2002063669A2 (en) 2002-08-15
WO2002063669A3 true true WO2002063669A3 (en) 2002-12-05

Family

ID=24806963

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/050150 WO2002063669A3 (en) 2000-10-27 2001-10-26 Method and apparatus for two-step barrier layer polishing

Country Status (2)

Country Link
US (1) US6709316B1 (en)
WO (1) WO2002063669A3 (en)

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US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6858540B2 (en) * 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
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US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6884724B2 (en) * 2001-08-24 2005-04-26 Applied Materials, Inc. Method for dishing reduction and feature passivation in polishing processes
US7063597B2 (en) * 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
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US6830504B1 (en) * 2003-07-25 2004-12-14 Taiwan Semiconductor Manufacturing Company Barrier-slurry-free copper CMP process
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US20050148289A1 (en) * 2004-01-06 2005-07-07 Cabot Microelectronics Corp. Micromachining by chemical mechanical polishing
US7288021B2 (en) 2004-01-07 2007-10-30 Cabot Microelectronics Corporation Chemical-mechanical polishing of metals in an oxidized form
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
WO2006081589A3 (en) * 2005-01-28 2006-11-23 Applied Materials Inc Tungsten electroprocessing
DE102005004384A1 (en) * 2005-01-31 2006-08-10 Advanced Micro Devices, Inc., Sunnyvale A process for producing a defined recess in a damascene structure using a CMP process and a damascene structure
WO2006133249A3 (en) * 2005-06-06 2009-04-16 Advanced Tech Materials Integrated chemical mechanical polishing composition and process for single platen processing
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US20070039926A1 (en) * 2005-08-17 2007-02-22 Cabot Microelectronics Corporation Abrasive-free polishing system
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
WO2007094869A3 (en) * 2005-10-31 2008-10-02 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
KR100744273B1 (en) * 2005-12-28 2007-07-30 동부일렉트로닉스 주식회사 Method for manufacturing phase-change memory element
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates
US8089055B2 (en) * 2008-02-05 2012-01-03 Adam Alexander Brailove Ion beam processing apparatus
JP2009194134A (en) * 2008-02-14 2009-08-27 Ebara Corp Polishing method and polishing apparatus
JP2010226089A (en) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc Method of cleaning semiconductor wafers
CN102615584A (en) * 2011-01-31 2012-08-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method

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Publication number Priority date Publication date Assignee Title
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
WO1998036045A1 (en) * 1997-02-14 1998-08-20 Ekc Technology, Inc. Post clean treatment
WO1998049723A1 (en) * 1997-04-30 1998-11-05 Minnesota Mining And Manufacturing Company Method of planarizing the upper surface of a semiconductor wafer
WO2000000561A1 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
WO2000024842A1 (en) * 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
EP1006166A1 (en) * 1998-12-01 2000-06-07 Fujimi Incorporated Polishing composition and polishing method employing it
EP1011131A1 (en) * 1998-12-17 2000-06-21 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
EP1085067A1 (en) * 1999-09-20 2001-03-21 Fujimi Incorporated Polishing composition and polishing process
US6258721B1 (en) * 1999-12-27 2001-07-10 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers

Also Published As

Publication number Publication date Type
US6709316B1 (en) 2004-03-23 grant
WO2002063669A2 (en) 2002-08-15 application

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