WO2002049339A3 - Cmos-compatible three-dimensional image sensing using quantum efficiency modulation - Google Patents

Cmos-compatible three-dimensional image sensing using quantum efficiency modulation Download PDF

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Publication number
WO2002049339A3
WO2002049339A3 PCT/US2001/048219 US0148219W WO0249339A3 WO 2002049339 A3 WO2002049339 A3 WO 2002049339A3 US 0148219 W US0148219 W US 0148219W WO 0249339 A3 WO0249339 A3 WO 0249339A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum efficiency
target
photodetector
modulated
optical energy
Prior art date
Application number
PCT/US2001/048219
Other languages
French (fr)
Other versions
WO2002049339A2 (en
Inventor
Cyrus Bamji
Edoardo Charbon
Original Assignee
Canesta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/876,373 external-priority patent/US6587186B2/en
Application filed by Canesta Inc filed Critical Canesta Inc
Priority to AU2002239608A priority Critical patent/AU2002239608A1/en
Priority to EP01987386A priority patent/EP1356664A4/en
Priority to JP2002550710A priority patent/JP4533582B2/en
Publication of WO2002049339A2 publication Critical patent/WO2002049339A2/en
Publication of WO2002049339A3 publication Critical patent/WO2002049339A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/493—Extracting wanted echo signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Abstract

A preferably CMOS-implementable method and system measures distance and/or brightness by illuminating (22) a target (20) with emitted optical energy having a modulated periodic waveform whose high frequency component may be idealized as S1 = cos(a.t). A fraction of the emitted optical energy is reflected by a target and detected with at least one in a plurality of semiconductor photodetectors (240-N). Photodetector quantum efficiency is modulated (Fig. 8-10) to process detected signals to yield data proportional to the distance z separating the target and photodetector. Detection includes measuring phase change between the emitted optical energy and the reflected fraction thereof. Quantum efficiency can be modulated with fixed (Fig. 10) or variable (Fig. 9) phase methods and may be enhanced using enhanced photocharge collection, differential modulation, and spatial and temporal multiplexing. System power requirements may be reduced with inductors (Lp)that resonate with photodetector capacitance at the operating frequency. The system includes on-chip photodetectors, associated electronics, and processing.
PCT/US2001/048219 2000-12-11 2001-12-11 Cmos-compatible three-dimensional image sensing using quantum efficiency modulation WO2002049339A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002239608A AU2002239608A1 (en) 2000-12-11 2001-12-11 Cmos-compatible three-dimensional image sensing using quantum efficiency modulation
EP01987386A EP1356664A4 (en) 2000-12-11 2001-12-11 Cmos-compatible three-dimensional image sensing using quantum efficiency modulation
JP2002550710A JP4533582B2 (en) 2000-12-11 2001-12-11 A CMOS compatible 3D image sensing system using quantum efficiency modulation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25487300P 2000-12-11 2000-12-11
US60/254,873 2000-12-11
US09/876,373 2001-06-06
US09/876,373 US6587186B2 (en) 2000-06-06 2001-06-06 CMOS-compatible three-dimensional image sensing using reduced peak energy

Publications (2)

Publication Number Publication Date
WO2002049339A2 WO2002049339A2 (en) 2002-06-20
WO2002049339A3 true WO2002049339A3 (en) 2003-02-27

Family

ID=26944292

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048219 WO2002049339A2 (en) 2000-12-11 2001-12-11 Cmos-compatible three-dimensional image sensing using quantum efficiency modulation

Country Status (4)

Country Link
EP (1) EP1356664A4 (en)
JP (1) JP4533582B2 (en)
AU (1) AU2002239608A1 (en)
WO (1) WO2002049339A2 (en)

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JP2006523074A (en) * 2003-04-11 2006-10-05 カネスタ インコーポレイテッド Method and system for differentially expanding the dynamic range of a sensor
JP4280822B2 (en) * 2004-02-18 2009-06-17 国立大学法人静岡大学 Optical time-of-flight distance sensor
US7126100B1 (en) * 2004-05-21 2006-10-24 Kla-Tencor Technologies Corporation System and method for sensing using adjustable modulation transfer function (MTF)
DE102004037137B4 (en) * 2004-07-30 2017-02-09 PMD Technologie GmbH Method and device for distance measurement
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JP4944579B2 (en) * 2005-11-14 2012-06-06 パナソニック株式会社 Spatial information detection device
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JP4757779B2 (en) * 2006-11-15 2011-08-24 浜松ホトニクス株式会社 Distance image sensor
JP5295511B2 (en) * 2007-03-23 2013-09-18 富士フイルム株式会社 Ranging device and ranging method
JP4831760B2 (en) * 2007-03-29 2011-12-07 日本放送協会 3D information detection method and apparatus
US8629976B2 (en) 2007-10-02 2014-01-14 Microsoft Corporation Methods and systems for hierarchical de-aliasing time-of-flight (TOF) systems
WO2009048799A1 (en) 2007-10-11 2009-04-16 Jie Yao Photo-detector array and semiconductor image intensifier
WO2010083263A1 (en) 2009-01-15 2010-07-22 Jie Yao Mesa heterojunction phototransistor and method for making same
JP6386777B2 (en) * 2014-05-08 2018-09-05 浜松ホトニクス株式会社 Distance image sensor
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Also Published As

Publication number Publication date
WO2002049339A2 (en) 2002-06-20
EP1356664A2 (en) 2003-10-29
JP4533582B2 (en) 2010-09-01
EP1356664A4 (en) 2009-07-22
AU2002239608A1 (en) 2002-06-24
JP2004525351A (en) 2004-08-19

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