WO2002011191A3 - Near critical and supercritical ozone substrate treatment and apparatus for same - Google Patents

Near critical and supercritical ozone substrate treatment and apparatus for same Download PDF

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Publication number
WO2002011191A3
WO2002011191A3 PCT/US2001/024185 US0124185W WO0211191A3 WO 2002011191 A3 WO2002011191 A3 WO 2002011191A3 US 0124185 W US0124185 W US 0124185W WO 0211191 A3 WO0211191 A3 WO 0211191A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
apparatus
supercritical
same
substrate treatment
near critical
Prior art date
Application number
PCT/US2001/024185
Other languages
French (fr)
Other versions
WO2002011191A2 (en )
Inventor
David P Jackson
Original Assignee
Deflex Llc
David P Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841Cleaning during or after manufacture
    • B81C1/00849Cleaning during or after manufacture during manufacture
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

Disclosed is a method and apparatus for treating a substrate with a reaction solvent formed of supercritical ozone in a feed phase. The feed phase can be aqueous, e.g., formed of heated, deionized water, nonaqueous, e.g., formed of a dense fluid, such as supercritical carbon dioxide, liquid carbon dioxide, supercritical nitrogen or combinations the dense fluids or the feed phase can be a mixture of aqueous and nonaqueous phases.
PCT/US2001/024185 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same WO2002011191A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US22195600 true 2000-07-31 2000-07-31
US60/221,956 2000-07-31

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10343734 US7219677B1 (en) 2001-07-31 2001-07-31 Method and apparatus for supercritical ozone treatment of a substrate
AU7913601A AU7913601A (en) 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same

Publications (2)

Publication Number Publication Date
WO2002011191A2 true WO2002011191A2 (en) 2002-02-07
WO2002011191A3 true true WO2002011191A3 (en) 2002-06-20

Family

ID=22830142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/024185 WO2002011191A3 (en) 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same

Country Status (1)

Country Link
WO (1) WO2002011191A3 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7267727B2 (en) 2002-09-24 2007-09-11 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
KR100505693B1 (en) 2003-06-26 2005-08-03 삼성전자주식회사 Cleaning method of photoresist or organic material from microelectronic device substrate
DE102004029077B4 (en) * 2003-06-26 2010-07-22 Samsung Electronics Co., Ltd., Suwon Apparatus and method for removing photoresist from a substrate
US20050029492A1 (en) 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US7195676B2 (en) 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7951723B2 (en) 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391035A2 (en) * 1989-04-03 1990-10-10 Hughes Aircraft Company Dense fluid photochemical process for substrate treatment
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
WO1996023606A1 (en) * 1995-02-01 1996-08-08 Jackson David P Dense fluid centrifugal separation process and apparatus
US5558110A (en) * 1993-07-23 1996-09-24 Williford, Jr.; John F. Apparatus for removing particulate matter
EP0829312A2 (en) * 1996-07-25 1998-03-18 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
EP0391035A2 (en) * 1989-04-03 1990-10-10 Hughes Aircraft Company Dense fluid photochemical process for substrate treatment
US5558110A (en) * 1993-07-23 1996-09-24 Williford, Jr.; John F. Apparatus for removing particulate matter
WO1996023606A1 (en) * 1995-02-01 1996-08-08 Jackson David P Dense fluid centrifugal separation process and apparatus
EP0829312A2 (en) * 1996-07-25 1998-03-18 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same

Also Published As

Publication number Publication date Type
WO2002011191A2 (en) 2002-02-07 application

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