WO2002011191A3 - Near critical and supercritical ozone substrate treatment and apparatus for same - Google Patents

Near critical and supercritical ozone substrate treatment and apparatus for same

Info

Publication number
WO2002011191A3
WO2002011191A3 PCT/US2001/024185 US0124185W WO2002011191A3 WO 2002011191 A3 WO2002011191 A3 WO 2002011191A3 US 0124185 W US0124185 W US 0124185W WO 2002011191 A3 WO2002011191 A3 WO 2002011191A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
supercritical
feed
formed
phase
dense
Prior art date
Application number
PCT/US2001/024185
Other languages
French (fr)
Other versions
WO2002011191A2 (en )
Inventor
David P Jackson
Original Assignee
Deflex Llc
David P Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841Cleaning during or after manufacture
    • B81C1/00849Cleaning during or after manufacture during manufacture
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

Disclosed is a method and apparatus for treating a substrate with a reaction solvent formed of supercritical ozone in a feed phase. The feed phase can be aqueous, e.g., formed of heated, deionized water, nonaqueous, e.g., formed of a dense fluid, such as supercritical carbon dioxide, liquid carbon dioxide, supercritical nitrogen or combinations the dense fluids or the feed phase can be a mixture of aqueous and nonaqueous phases.
PCT/US2001/024185 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same WO2002011191A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US22195600 true 2000-07-31 2000-07-31
US60/221,956 2000-07-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10343734 US7219677B1 (en) 2001-07-31 2001-07-31 Method and apparatus for supercritical ozone treatment of a substrate

Publications (2)

Publication Number Publication Date
WO2002011191A2 true WO2002011191A2 (en) 2002-02-07
WO2002011191A3 true true WO2002011191A3 (en) 2002-06-20

Family

ID=22830142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/024185 WO2002011191A3 (en) 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same

Country Status (1)

Country Link
WO (1) WO2002011191A3 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7267727B2 (en) 2002-09-24 2007-09-11 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
KR100505693B1 (en) 2003-06-26 2005-08-03 삼성전자주식회사 Cleaning method of photoresist or organic material from microelectronic device substrate
DE102004029077B4 (en) * 2003-06-26 2010-07-22 Samsung Electronics Co., Ltd., Suwon Apparatus and method for removing photoresist from a substrate
US20050029492A1 (en) 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US7195676B2 (en) 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7951723B2 (en) 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391035A2 (en) * 1989-04-03 1990-10-10 Hughes Aircraft Company Dense fluid photochemical process for substrate treatment
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
WO1996023606A1 (en) * 1995-02-01 1996-08-08 Jackson David P Dense fluid centrifugal separation process and apparatus
US5558110A (en) * 1993-07-23 1996-09-24 Williford, Jr.; John F. Apparatus for removing particulate matter
EP0829312A2 (en) * 1996-07-25 1998-03-18 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
EP0391035A2 (en) * 1989-04-03 1990-10-10 Hughes Aircraft Company Dense fluid photochemical process for substrate treatment
US5558110A (en) * 1993-07-23 1996-09-24 Williford, Jr.; John F. Apparatus for removing particulate matter
WO1996023606A1 (en) * 1995-02-01 1996-08-08 Jackson David P Dense fluid centrifugal separation process and apparatus
EP0829312A2 (en) * 1996-07-25 1998-03-18 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same

Also Published As

Publication number Publication date Type
WO2002011191A2 (en) 2002-02-07 application

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