Connect public, paid and private patent data with Google Patents Public Datasets

Apparatus and method for controlling temperature in a wafer and a device under test using integrated temperature sensitive diode

Info

Publication number
WO2002005051A2
WO2002005051A2 PCT/US2001/021317 US0121317W WO2002005051A2 WO 2002005051 A2 WO2002005051 A2 WO 2002005051A2 US 0121317 W US0121317 W US 0121317W WO 2002005051 A2 WO2002005051 A2 WO 2002005051A2
Authority
WO
Grant status
Application
Patent type
Prior art keywords
temperature
circuit
control
integrated
wafer
Prior art date
Application number
PCT/US2001/021317
Other languages
French (fr)
Other versions
WO2002005051A3 (en )
Inventor
Douglas S. Olsen
David Stura
Original Assignee
Temptronic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1927Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
    • G05D23/1934Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces each space being provided with one sensor acting on one or more control means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature

Abstract

An apparatus and method for controlling temperature in a device under test (DUT) having an integrated circuit chip die includes a temperature sensing device, such as a temperature sensitive diode, integrally formed in the chip die. A sensing circuit (23) senses a signal from the diode (204) indicative of temperature of the chip die. The sensing circuit can be part of a testing circuit in a system being used to test the DUT. The sensing circuit sends a control signal to a temperature control system (24) used to control the temperature of a DUT temperature control medium. The temperature control medium can be, for example, a stream of temperature-controlled air directed onto the package of the DUT. In response to the control signal, the temperature control system controls the temperature of the air at a desired temperature to control (241) the temperature of the DUT.

Description

APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE IN A

WAFER AND A DEVICE UNDER TEST USING INTEGRATED

TEMPERATURE SENSITIVE DIODE

Field of the Invention The present invention relates to integrated circuit device testing and in particular to controlling temperature in an integrated circuit wafer and/or a device under test (DUT) during testing.

Background of the Invention

Typically, in integrated circuit (IC) processing, semiconductor wafers and packaged ICs are subjected to a series of test and evaluation steps. For each step, the wafer or packaged circuit device under test (DUT) is held in a stationary position at a process station where the process is performed. In wafer testing, the wafer is typically held stationary relative to a vacuum support surface of a prober machine which electrically tests the circuits on the wafer. The prober includes a group of electrical probes in a probe head which is positioned such that the probes are brought into contact with predetermined contact points on individual circuits formed in the wafer. The probes, in conjunction with a tester, apply predetermined electrical excitations to various predetermined portions of the circuits on the wafer and sense the circuits' responses to the excitations. In packaged IC testing, the IC is typically held in a test socket mounted on a test board. The electrical stimulus signals are applied to the DUT and response signals are received via the socket and the test board.

The test system used to test a wafer or a packaged device can also include a temperature control system which maintains the temperature of the wafer or DUT at a desired set point temperature. Temperature control systems for a wafer can take several forms. For example, the chuck can be outfitted with electrical heaters which are controlled to provide heat to the chuck and raise the temperature of the wafer. The chuck can also include a heat sink for removing heat from the chuck. The temperature control system can also include a means for circulating a fluid through the chuck to cool and/or heat the chuck. In wafer testing the set point temperature of the chuck is selected based on a desired testing temperature for the wafer. The chuck typically includes a temperature sensor mounted within the chuck in close proximity to its top surface and , therefore, the wafer mounted thereon. Since the temperature sensor is located close to the wafer, it is assumed that the temperature at the top surface of the chuck is the same as the temperature of the wafer circuit being tested and that any difference in temperature between the two is negligible.

In many modern circuit testing settings, this assumption can lead to inaccurate testing results. For example, in many circuits, power dissipation is relatively high. This results in substantial localized heating of the circuit or adjacent circuits when the circuit testing excitation signal is applied by a tester operating with the prober. The result is that the circuit is actually tested at a much higher temperature than the temperature set by the system, and the accuracy of the test is reduced. a system for testing packaged ICs, the temperature control system can provide a temperature-controlled stream of fluid or gas, e.g., air, directed onto the

DUT package. An example of such a system is the ThermoStream system sold by Temptronic Corporation of Newton, Massachusetts, the assignee of the present application. The temperature control used in the ThermoStream system is described in U. S. Patent number 4,734,872, assigned to Temptronic Corporation, the assignee of the present application, and incorporated herein in its entirety by reference. In the

ThermoStream system, the set point temperature of the DUT is maintained by simultaneously monitoring the temperature of the air stream and the temperature of the DUT package. In many applications, even with the temperature probe on the package, some level of inaccuracy, albeit small, can be introduced. It would be beneficial to have a temperature control system for controlling the temperature of a wafer or device under test in which temperature sensing is realized at the actual circuit being tested.

Summary of the Invention

In a first aspect, the present invention is directed to an apparatus and method for controlling the temperature of at least a portion of an integrated circuit wafer which overcomes the drawbacks of the prior art. The apparatus of the invention includes a temperature sensing device integrally formed in the integrated circuit wafer. A sensing circuit receives from the temperature sensing device a signal indicative of temperature of the integrated circuit wafer. A temperature control medium is in thermal communication with the wafer. The temperature of the temperature control medium is controlled by a temperature control system. The temperature control system uses the signal indicative of the temperature of the wafer to control the temperature of the temperature control medium such that the temperature of the wafer is controlled.

In one embodiment, the temperature control medium is a temperature- controlled workpiece chuck on which the wafer is supported, hi another embodiment, the temperature control medium is a stream of a temperature-controlled gas such as air which is directed onto the wafer.

The temperature sensing device formed in the wafer can be a temperature- sensitive diode. An excitation current can be driven through the diode by the prober tester, and the resulting voltage drop across the diode can be sensed. In such a diode, the voltage drop across the diode changes with temperature. Therefore, the sensed voltage drop can be used to generate the signal indicative of temperature of the wafer.

Hence, in one embodiment, the sensing circuit can be part of a testing circuit in a wafer prober machine used to test integrated circuits formed in the wafer. The testing circuit can be coupled to the temperature control system. The signal indicative of temperature of the wafer is used to generate a control signal which is applied to the temperature control system and is used by the temperature control system to control the temperature of the temperature control medium, e.g., the chuck or the air stream.

The temperature control approach of the invention can be applied to testing multiple individual integrated circuit die while they are still attached within a wafer. Accordingly, each individual circuit is formed with its own integral temperature sensing device, i.e., diode. As each circuit is tested by the prober, its respective temperature signal is sensed at its respective integral diode. The temperature for the particular circuit under test can then be adjusted based on its locally sensed temperature, thus assuring highly accurate temperature data for each test. In one embodiment, the temperature control process used in the invention directly controls the temperature of the temperature control medium, i.e., chuck or air stream, to control the temperature of the wafer. That is, in the chuck system, the temperature of the chuck is controlled to reach and stabilize at a desired chuck temperature set point. If the chuck is at its desired set point and the wafer is not at its desired temperature, then a new set point is selected for the chuck. The set point for the chuck continues to be adjusted to maintain the temperature of the wafer at its desired temperature. Likewise, in the air stream system, the temperature of the air stream is sensed, and the sensed temperature is used to control the temperature of the air stream to maintain it at a desired set point. If the air stream temperature is at its set point and the wafer is not, then a new air stream set point is selected. This continues until the desired temperature is reached. Hence, in either system, the set point for the temperature control medium, i.e., chuck or air stream, is in general different than the set point for the wafer. This type of control can be regarded as a "dual-loop" control in which two types of feedback are used to achieve the ultimate desired output. Such dual-loop temperature control, which can be used in accordance with one embodiment of the invention, is described in, for example, U. S. Patent number 4,734,872, entitled, "Temperature Control for Device Under Test," issued March 29, 1988, assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.

The temperature control approach used in accordance with the invention is used to precisely control the temperature of the wafer circuit being tested, with temperature sensing being realized at the circuit under test, not at a relatively remote location. As a result, the temperature control tests performed in connection with the temperature control of the invention are more accurate than tests performed using prior approaches to temperature control.

In a second aspect, the present invention is directed to an apparatus and method for controlling the temperature of a device under test (DUT) having an integrated circuit chip die which overcomes the drawbacks of the prior art. The apparatus of the invention includes a temperature sensing device integrally formed in the integrated circuit chip die. A sensing circuit receives from the temperature sensing device a signal indicative of temperature of the integrated circuit chip die. A temperature control medium is in thermal communication with the DUT. The temperature of the temperature control medium is controlled by a temperature control system. The temperature control system uses tlie signal indicative of the temperature of the integrated circuit chip die to control the temperature of the temperature control medium such that the temperature of the integrated circuit chip die is controlled.

In one embodiment, the temperature control medium is a stream of a temperature-controlled gas such as air which is directed onto the DUT. The temperature control system controls the temperature of the air to control the temperature of the DUT. The temperature sensing device formed in the integrated circuit chip die can be a temperature-sensitive diode. The diode is formed in the chip along with the other circuitry. An excitation current can be driven through the diode by the DUT testing system, and the resulting voltage drop across the diode can be sensed. In such a diode, the voltage drop across the diode changes with temperature. Therefore, the sensed voltage drop can be used to generate the signal indicative of temperature of the integrated circuit chip die.

The DUT can be a packaged integrated circuit with an internal chip die. The device can include conductive pins which provide the interface between the internal circuitry and external devices and systems. In one embodiment, the sensing circuit can be part of a testing circuit in a system used to test the DUT. To test the device, the testing circuit applies test stimulus signals to the DUT, and receives test response signals from the DUT, via the package pins. The testing circuit can be coupled to the temperature control system. The signal indicative of temperature of the integrated circuit chip die, received via one or more package pins, is used to generate a control signal which is applied to the temperature control system and is used by the temperature control system to control the temperature of the temperature control medium, e.g., the air stream.

In one embodiment, the temperature control process used in the invention directly controls the temperature of the temperature control medium, i.e., air stream, to control the temperature of the DUT. That is, in the air stream system, the temperature of the air stream is sensed, and the sensed temperature is used to control the temperature of the air stream to maintain it at a desired set point. If the air stream temperature is at its set point and the diode output signal does not indicate that the DUT is at its desired set point temperature, then a new air stream set point is selected. This continues until the desired temperature is reached. Hence, the set point for the temperature control medium, i.e., air stream, is in general different than the set point for the DUT.

This type of control can be regarded as a "dual-loop" control in which two types of feedback are used to achieve the ultimate desired output. Such dual-loop temperature control, which can be used in accordance with one embodiment of the invention, is described in, for example, U. S. Patent number 4,734,872, entitled, "Temperature Control for Device Under Test," issued March 29, 1988, assigned to

Temptronic Corporation, and incorporated herein in its entirety by reference.

The temperature control approach used in accordance with the invention is used to precisely control the temperature of the device being tested, with temperature sensing being realized at the circuit under test, not at a relatively remote location. As a result, the temperature control tests performed in connection with the temperature control of the invention are more accurate than tests performed using prior approaches to temperature control.

Brief Description of the Drawings

The foregoing and other objects, features, and advantages of the invention will be apparent from the following more particular description of preferred embodiments of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. FIG. 1 is a schematic block diagram of a wafer testing system using temperature control in accordance with the invention.

FIG. 2 is a schematic block diagram of another wafer testing system using temperature control in accordance with the invention.

FIG. 3 is a schematic plan view of an integrated circuit wafer having multiple integrated circuits formed with integral temperature sensing diodes, for use with the temperature control apparatus and method of the invention. FIG. 4 contains a schematic perspective view of a packaged integrated circuit device under test to which the invention is applicable.

FIG. 5 contains a schematic block diagram of one embodiment of an integrated circuit testing system to which the invention is applicable.

Detailed Description of Preferred Embodiments of the Invention

FIG. 1 is a schematic block diagram of a circuit testing system, particularly a wafer probing system 10, which includes the temperature control apparatus and method of the invention. The system 10 includes a prober base 12 on which is mounted a temperature-controlled wafer chuck 14 used to support a wafer under test 16 during testing. The chuck 14 can be of the types described in U. S. Patent number

6,01 ,164, issued February 1, 2000, entitled, "Workpiece Chuck," assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; U. S. Patent number 6,073,681, issued June 13, 2000, entitled, "Workpiece Chuck," assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; and copending U. S. Patent Application serial number 09/473,099, filed on

December 28, 1999, entitled, "Workpiece Chuck," assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.

The temperature of the chuck 14 is controlled by temperature controller 24 via an electrical interface generally identified by reference numeral 28 and a thermal interface identified by reference numeral 26. The thermal interface 26 can include, for example, tubes for circulating a temperature-controlled fluid through the chuck 14. The electrical interface can be used, for example, to provide power to heaters in the chuck 14. The temperature of the chuck 14 can be controlled in accordance with copending U. S. Patent Application serial number 09/001,887, filed on December 31, 1997, entitled, "Temperature Control System for a Workpiece Chuck," assigned to

Temptronic Corporation, and incorporated herein in its entirety by reference.

The prober includes a tester circuit 22 which controls a test head 18 which physically interfaces with circuits on the wafer 16 via a set of prober pins or probes 20. The tester 22 applies test stimulus signals to the circuit under test and receives response signals via the pins 20 in the test head 18 and the interface generally identified by reference numeral 32. FIG. 3 is a schematic top plan view of the wafer 16. As shown in FIG. 3, the wafer 16 includes multiple integrated circuits 202 formed in the wafer by known integrated circuit fabrication processes. Each circuit 202 also includes a temperature sensing device, such as a temperature sensitive diode 204, formed integrally in the wafer 16 with the circuits 202. These diodes 204 can be formed at the same time as the circuits 202 as part of the circuit fabrication process, or they can be formed in a separate fabrication process. The diodes 204 operate such that, during operation, as they conduct current, the voltage drop across them varies with temperature in a known and characterized fashion. Hence, a measurement of the voltage drop across the diode 204 can be used to determine the temperature of the diode 204 and, therefore, its respective associated circuit 202 under test.

Referring again to FIG. 1, the tester 22 applies the test stimulus signals to a particular circuit under test on the wafer 16. The response signals are received and processed by the tester 22. The tester 22 includes a temperature testing circuit 23 which receives and processes the signal from the temperature sensitive diode 204 in the circuit 202 under test. The signal is processed and a resulting control signal is generated and applied to the temperature controller 24. The signal processed by the circuit 23 is indicative of the temperature of the circuit 202 under test. The control signal sent to the temperature controller 24 is used to select the set point temperature for the chuck to adjust the chuck temperature until the signal processed by the circuit

23 indicates that the circuit 202 under test is at the desired set temperature.

This approach is referred to herein as a "dual-loop" control approach. A first control loop is used to control the temperature of the chuck 14 to maintain the chuck temperature at the desired chuck set point temperature. The second loop is used to control the set point temperature of the chuck 14 such that the desired wafer circuit temperature is maintained. Such a dual-loop temperature control is described in U. S. Patent number 4,734,872, cited above and incorporated herein in its entirety by reference.

FIG. 2 is a schematic block diagram of another circuit test system 100 which implements the temperature control approach of the invention, i this embodiment, instead of controlling the temperature of the chuck 114 on which the wafer 16 is mounted, a stream of temperature-controlled gas 125 is directed onto the wafer 1 by a nozzle 127 and gas tube 126 from a gas temperature controller 124. The stream type temperature control system can be of the type described in U. S. Patent number 4,734,872 cited above and incorporated herein in its entirety by reference.

In accordance with the dual-loop control approach, the temperature controller 124 maintains the temperature of the gas at a set point temperature. If the signal processed by the circuit 23 indicates that the circuit 202 under test is not at its desired temperature, a control signal sent to the temperature controller 124 selects a new set point. This process continues until the circuit under test is maintained at the desired temperature. In another aspect, the invention is used to control the temperature of a device under test (DUT) which can be, for example, a packaged integrated circuit. FIG. 4 contains a schematic perspective view of a packaged integrated circuit 301 to which the invention is applicable. The DUT 301 includes and integrated circuit chip die 307 inside an integrated circuit package 303. The interface between the chip die circuits 307 and external circuits and systems is provided via conductive pins 305.

The devices fabricated on the chip die 307 include the temperature-sensitive diode.309. The diode 309 is also interfaced to external circuitry via pins 305.

FIG. 5 contains a schematic block diagram of one embodiment of an integrated circuit testing system 400 to which the invention is applicable. The testing system can be, for example, the ThermoStream system sold by Temptronic

Corporation of Newton, Massachusetts, the assignee of the present application, modified to stimulate and process the signals generated by the integrated temperature-sensitive diode 309 to control the temperature of the DUT 301 in accordance with the invention. The testing system and temperature control used in the invention can be of the type described in U. S. Patent number 4,734,872, incorporated herein by reference, once again, modified to stimulate and process the signals generated by the integrated temperature-sensitive diode 309 to control the temperature of the DUT 301 in accordance with the invention .

As shown in FIG. 5, the test system 400 includes a gas (air) inlet which receives the gas whose temperature is to be controlled. An air dryer 424 lowers the dew point of the air to prevent condensation, and refrigeration 426 and heating 428 are used to control the temperature of the gas under the control of the temperature controller 359. The air temperature sensor 436 senses the temperature of the air and provides a signal indicative of the air temperature, which is used by the temperature controller 359 to control the temperature of the air via the refrigeration 426 and heating 428. The temperature-controlled air is directed onto the DUT 301 to control its temperature.

The DUT 301 is mounted in a socket 351 which is mounted on a circuit board 353. Stimulus and response test signals between the tester 357 and the DUT 301 are routed from the DUT 301, through the circuit board 353 and to the tester 357 via a board-mounted connector 355. These signals include the signals at the temperature- sensitive diode 309 formed integrally within the chip die in the DUT 301. The tester applies the test stimulus signals and receives the test response signals used to test the DUT 301. The tester 357 also routes the signal indicative of the DUT temperature from the diode 309 to the temperature controller 359. The temperature controller 359 uses the temperature of the DUT 301 and the air to maintain the DUT 301 at the desired temperature set point. This can be done using the dual-loop control described above and in U. S. Patent number 4,734,872, incorporated herein by reference.

Referring to FIG. 5, a tester 357 can be used as described above but is not required. The temperature controller 359 can apply the test stimulus and receive test response signals directly as shown by the dashed line. While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. What is claimed is:

Claims

CLA S
1. An apparatus for controlling temperature of at least a portion of an integrated circuit wafer comprising: an integral temperature sensing device integrally formed in the integrated circuit wafer; a sensing circuit for receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit wafer; a temperature control medium in thermal communication with the integrated circuit wafer; a temperature control system for controlling temperature of the temperature control medium, the temperature control system using the signal indicative of temperature of the integrated circuit wafer to control the temperature of the temperature control medium such that the temperature of integrated circuit wafer is controlled.
2. The apparatus of claim 1 , wherein the temperature control medium is a temperature-controlled chuck on which the wafer is supported.
3. The apparatus of claim 1, wherein the temperature control medium is a temperature-controlled stream of gas directed onto the wafer.
4. The apparatus of claim 3, wherein the gas is air.
5. The apparatus of claim 1 , wherein the temperature sensing device is a temperature sensitive diode formed in the integrated circuit wafer.
6. The apparatus of claim 1 , wherein each of a plurality of portions of the integrated circuit wafer includes an integral temperature sensing device such that the temperature of each of the plurality of portions of the integrated circuit wafer can be controlled.
7. The apparatus of claim 6, wherein each of the plurality of portions of the integrated circuit wafer is an individual integrated circuit chip die in the wafer.
8. The apparatus of claim 1, wherein the sensing circuit is part of a testing circuit in a wafer prober machine used to test an integrated circuit formed in the portion of the integrated circuit wafer.
9. The apparatus of claim 8, wherein the testing circuit of the wafer prober machine is coupled to the temperature control system, the testing circuit using the signal indicative of temperature of the integrated circuit wafer to generate a control signal applied to the temperature control system and used by the temperature control system to control the temperature of the temperature control medium.
10. The apparatus of claim 9, wherein the control signal is used by the temperature control system to set the temperature of the temperature control medium at a first temperature set point such that the temperature of the portion of the integrated circuit wafer is controlled at a desired wafer temperature set point.
11. A method of controlling temperature of at least a portion of an integrated circuit wafer on a chuck comprising: integrally forming a temperature sensing device in the integrated circuit wafer; receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit wafer; providing a temperature control medium in thermal communication with the integrated circuit device; using the signal indicative of temperature of the integrated circuit wafer, controlling temperature of the temperature control medium such that the temperature of the integrated circuit wafer is controlled.
12. The method of claim 11 , wherein the temperature control medium is a temperature-controlled chuck on which the wafer is supported.
13. The method of claim 11 , wherein the temperature control medium is a temperature-controlled stream of gas directed onto the wafer.
14. The method of claim 13, wherein the gas is air.
15. The method of claim 11 , wherein integrally forming the temperature sensing device in the integrated circuit wafer comprises integrally forming a temperature sensitive diode in the integrated circuit wafer.
16. The method of claim 11 , wherein each of a plurality of portions of the integrated circuit wafer includes an integral temperature sensing device such that the temperature of each of the plurality of portions of the integrated circuit wafer can be controlled.
17. The method of claim 16, wherein each of the plurality of portions of the integrated circuit wafer is an individual integrated circuit chip die in the wafer.
18. The method of claim 11 , wherein the signal indicative of temperature in the integrated circuit wafer is received by a sensing circuit in a testing circuit in a wafer prober machine used to test an integrated circuit formed in the portion of the integrated circuit wafer.
19. The method of claim 18, further comprising, with the testing circuit, using the signal indicative of temperature of the integrated circuit wafer to generate a control signal for controlling the temperature of the temperature control medium.
20. The method of claim 19, wherein the control signal is used to set the temperature of temperature control medium at a first temperature set point such that the temperature of the portion of the integrated circuit wafer is controlled at a desired wafer temperature set point.
21. An apparatus for controlling temperature of at least a portion of an integrated circuit device comprising: an integral temperature sensing device integrally formed in the integrated circuit device; a sensing circuit for receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit device; a temperature control medium in thermal communication with the integrated circuit device; a temperature control system for controlling temperature of the temperature control medium, the temperature control system using the signal indicative of temperature of the integrated circuit device to control the temperature of the temperature control medium such that the temperature of integrated circuit device is controlled.
22. The apparatus of claim 21, wherein the temperature control medium is a temperature-controlled chuck on which the device is supported.
23. The apparatus of claim 21 , wherein the temperature control medium is a temperature-controlled stream of gas directed onto the device.
24. The apparatus of claim 23, wherein the gas is air.
25. The apparatus of claim 21, wherein the temperature sensing device is a temperature sensitive diode formed in the integrated circuit device.
26. The apparatus of claim 21 , wherein each of a plurality of portions of the integrated circuit device includes an integral temperature sensing device such that the temperature of each of the plurality of portions of the integrated chcuit device can be controlled.
27. The apparatus of claim 21 , wherein the sensing circuit is part of a testing circuit coupled to the temperature control system, the testing circuit using the signal indicative of temperature of the integrated circuit device to generate a control signal applied to the temperature control system and used by the temperature control system to control the temperature of the temperature control medium.
28. The apparatus of claim 27, wherein the control signal is used by the temperature control system to set the temperature of the temperature control medium at a first temperature set point such that the temperature of the portion of the integrated circuit device is controlled at a device temperature set point.
29. A method of controlling temperature of at least a portion of an integrated circuit device comprising: integrally forming a temperature sensing device in the integrated circuit device; receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit device; providing a temperature control medium in thermal communication with the integrated circuit device; using the signal indicative of temperature of the integrated circuit device, controlling temperature of the temperature control medium such that the temperature of integrated circuit device is controlled.
30. The method of claim 29, wherein the temperature control medium is a temperature-controlled chuck on which the device is supported.
31. The method of claim 29, wherein the temperature control medium is a temperature-controlled stream of gas directed onto the device.
32. The method of claim 31 , wherein the gas is air.
33. The method of claim 29, wherein integrally forming the temperature sensing device in the integrated circuit device comprises integrally forming a temperature sensitive diode in the integrated circuit device.
34. The method of claim 29, wherein each of a plurality of portions of the integrated circuit device includes an integral temperature sensing device such that the temperature of each of the plurality of portions of the integrated circuit device can be controlled.
35. The method of claim 29, wherein the signal indicative of temperature in the integrated circuit device is received by a sensing circuit in a testing circuit used to test an integrated circuit formed in the portion of the integrated circuit device.
36. The method of claim 35, further comprising, with the testing circuit, using the signal indicative of temperature of the integrated circuit device to generate a control signal for controlling the temperature of the temperature control medium.
37. The method of claim 36, wherein the control signal is used to set the temperature of the temperature control medium at a first temperature set point such that the temperature of the portion of the integrated circuit device is controlled at a device temperature set point.
38. An apparatus for controlling temperature of at least a portion of a device under test (DUT), the device under test including an integrated circuit chip die, the apparatus comprising: an integral temperature sensing device integrally formed in the integrated circuit chip die; a sensing circuit for receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit chip die; a temperature control medium in thermal communication with the DUT; a temperature control system for controlling temperature of the temperature control medium, the temperature control system using the signal indicative of temperature of the integrated circuit chip die to control the temperature of the temperature control medium such that the temperature of integrated circuit chip die is controlled.
39. The apparatus of claim 38, wherein the DUT is a packaged integrated circuit including a package which houses the integrated circuit chip die.
40. The apparatus of claim 39, wherein a test stimulus signal is applied to the integrated circuit chip die via a pin on the package.
41. The apparatus of claim 39, wherein a test response signal is received from the integrated circuit chip die via a pin on the package.
42. The apparatus of claim 39, wherein the signal indicative of temperature of the integrated circuit chip die is received from the integrated circuit chip die via a pin on the package.
43. The apparatus of claim 38, wherein the temperature sensing device is a temperature sensitive diode formed in the integrated circuit chip die.
44. The apparatus of claim 38, wherein the sensing circuit is part of a testing circuit used to test the integrated circuit chip die.
45. The apparatus of claim 44, wherein the testing circuit applies a test stimulus signal to the integrated circuit chip die via a pin on a package of the DUT.
46. The apparatus of claim 44, wherein the testing circuit receives a test response signal from the integrated circuit chip die via a pin on a package of the DUT.
47. The apparatus of claim 44, wherein the testing circuit is coupled to the temperature control system, the testing circuit using the signal indicative of temperature of the integrated circuit chip die to generate a control signal applied to the temperature control system and used by the temperature control system to control the temperature of the temperature control medium.
48. The apparatus of claim 47, wherein the control signal is used by the temperature control system to set the temperature of the temperature control medium at a first temperature set point such that the temperature of the integrated circuit chip die is controlled at a second chip die temperature set point.
49. The apparatus of claim 38, wherein the signal indicative of temperature of the integrated circuit chip die is received from the integrated circuit chip die via a pin on a package of the DUT.
50. The apparatus of claim 38, wherein the temperature control medium is a temperature-controlled stream of gas directed onto the DUT.
51. The apparatus of claim 50, wherein the gas is air.
52. A method of controlling temperature of at least a portion of device under test (DUT), the device under test including an integrated circuit chip die, the method comprising: integrally forming a temperature sensing device in the integrated circuit chip die; receiving a signal from the temperature sensing device indicative of temperature of the integrated circuit chip die; providing a temperature control medium in thermal communication with the DUT; using the signal indicative of temperature of the integrated circuit chip die, controlling temperature of the temperature control medium such that the temperature of the integrated circuit chip die is controlled.
53. The method of claim 52, wherein the DUT is a packaged integrated circuit including a package which houses the integrated circuit chip die.
54. The method of claim 53, further comprising applying a test stimulus signal to the integrated circuit chip die via a pin on the package.
55. The method of claim 53, further comprising receiving a test response signal from the integrated circuit chip die via a pin on the package.
56. The method of claim 53, further comprising receiving the signal indicative of temperature of the integrated circuit chip die from the integrated circuit chip die via a pin on the package.
57. The method of claim 52, wherein the temperature control medium is a temperature-controlled stream of gas directed onto the DUT.
58. The method of claim 57, wherein the gas is air.
59. The method of claim 52, wherein integrally forming the temperature sensing device in the integrated circuit chip die comprises integrally forming a temperature sensitive diode in the integrated circuit chip die.
60. The method of claim 52, wherein the signal indicative of temperature in the integrated circuit chip die is received by a sensing circuit in a testing circuit used to test the integrated circuit chip die.
61. The method of claim 60, further comprising: coupling the testing circuit to the temperature control system; with the testing circuit, using the signal indicative of temperature of the integrated circuit chip die, generating a control signal and applying the confrol signal to the temperature control system, the temperature control system using the control signal to control the temperature of the temperature control medium.
62. The method of claim 61 , wherein the control signal is used by the temperature control system to set the temperature of the temperature control medium at a first temperature set point such that the temperature of the integrated circuit chip die is controlled at a second chip die temperature set point.
PCT/US2001/021317 2000-07-10 2001-07-06 Apparatus and method for controlling temperature in a wafer and a device under test using integrated temperature sensitive diode WO2002005051A3 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US09/612,667 2000-07-10
US09612667 US6545494B1 (en) 2000-07-10 2000-07-10 Apparatus and method for controlling temperature in a wafer using integrated temperature sensitive diode
US09839274 US6552561B2 (en) 2000-07-10 2001-04-20 Apparatus and method for controlling temperature in a device under test using integrated temperature sensitive diode
US09/839,274 2001-04-20

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002509847A JP2004503924A (en) 2000-07-10 2001-07-06 Apparatus and method for controlling the temperature of the wafer and the device under test using the integrated temperature sensing diode
EP20010950901 EP1301838A2 (en) 2000-07-10 2001-07-06 Apparatus and method for controlling temperature in a wafer and a device under test using integrated temperature sensitive diode

Publications (2)

Publication Number Publication Date
WO2002005051A2 true true WO2002005051A2 (en) 2002-01-17
WO2002005051A3 true WO2002005051A3 (en) 2002-04-25

Family

ID=27086824

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/021317 WO2002005051A3 (en) 2000-07-10 2001-07-06 Apparatus and method for controlling temperature in a wafer and a device under test using integrated temperature sensitive diode

Country Status (4)

Country Link
US (1) US6552561B2 (en)
JP (1) JP2004503924A (en)
EP (1) EP1301838A2 (en)
WO (1) WO2002005051A3 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103364032A (en) * 2013-07-15 2013-10-23 中国科学院半导体研究所 Semiconductor luminescent device or module online multifunctional test system and method
WO2017155707A1 (en) * 2016-03-08 2017-09-14 Temptronic Corporation System and method for temperature forcing with conductive thermal probes

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1312106A1 (en) * 2000-07-21 2003-05-21 Temptronic Corporation Temperature-controlled thermal platform for automated testing
US6636062B2 (en) * 2001-04-10 2003-10-21 Delta Design, Inc. Temperature control device for an electronic component
KR100479988B1 (en) * 2002-07-24 2005-03-30 미래산업 주식회사 Method for compensating temperature in semiconductor test handler
JP4659328B2 (en) * 2002-10-21 2011-03-30 東京エレクトロン株式会社 Probe device for the temperature control of the object to be tested
JP2004354341A (en) * 2003-05-30 2004-12-16 Denso Corp Apparatus and method for testing environment
US6844752B1 (en) * 2003-09-19 2005-01-18 Xilinx, Inc. Thermal conditioning for integrated circuit testing
EP1692714A1 (en) * 2003-11-26 2006-08-23 Temptronic Corporation Apparatus and method for reducing electrical noise in a thermally controlled chuck
US8749762B2 (en) 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7235992B2 (en) * 2004-06-08 2007-06-26 Powerchip Semiconductor Corp. Semiconductor facility
DE102004057215B4 (en) * 2004-11-26 2008-12-18 Erich Reitinger Method and apparatus for testing semiconductor wafers by means of a probe card using a tempered fluid jet
DE102005001163B3 (en) * 2005-01-10 2006-05-18 Erich Reitinger Semiconductor wafers` testing method, involves testing wafer by probes, and reducing heating energy with constant cooling efficiency, under consideration of detected increase of temperature of fluids flowing via tempered chuck device
DE102005054552B4 (en) * 2005-11-14 2017-06-08 Infineon Technologies Austria Ag Apparatus and method for testing semiconductor substrates for cracks
JP2007165390A (en) * 2005-12-09 2007-06-28 Fujitsu Ltd Inspection apparatus and method therefor
US7590473B2 (en) * 2006-02-16 2009-09-15 Intel Corporation Thermal management using an on-die thermal sensor
US7457117B2 (en) * 2006-08-16 2008-11-25 Rambus Inc. System for controlling the temperature of electronic devices
US7663388B2 (en) * 2007-03-30 2010-02-16 Essai, Inc. Active thermal control unit for maintaining the set point temperature of a DUT
US8087823B2 (en) * 2008-08-18 2012-01-03 International Business Machines Corporation Method for monitoring thermal control
US8540422B2 (en) * 2010-10-04 2013-09-24 Cameron Health, Inc. Electrical component behavior analysis tools
US8547122B2 (en) * 2011-07-11 2013-10-01 Microchip Technology Incorporated Temperature measurement of active device under test on strip tester
CN102608509B (en) * 2011-12-22 2015-06-03 中国科学院半导体研究所 Method for carrying out light/electrical/thermal ageing comprehensive testing on light-emitting diodes
US9063171B2 (en) * 2012-03-23 2015-06-23 Mpi Corporation Probing apparatus equipped with heating device
US9244107B2 (en) * 2012-11-12 2016-01-26 Marvell World Trade Ltd. Heat sink blade pack for device under test testing
US9562943B2 (en) * 2012-11-19 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer temperature sensing methods and related semiconductor wafer
CN103176489B (en) * 2013-02-06 2015-09-30 南京千韵电子科技有限公司 Within the chip temperature control method and apparatus based on the experimental apparatus and method of the present
US20160054377A1 (en) * 2014-08-20 2016-02-25 Darryl G. Walker Testing and setting performance parameters in a semiconductor device and method therefor
CN104679059A (en) * 2014-12-26 2015-06-03 北京兆易创新科技股份有限公司 Temperature control system of integrated circuit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124949A (en) * 1982-01-20 1983-07-25 Sumitomo Metal Ind Ltd Estimating method of manganese content in molten steel
US4734872A (en) * 1985-04-30 1988-03-29 Temptronic Corporation Temperature control for device under test
US4848090A (en) * 1988-01-27 1989-07-18 Texas Instruments Incorporated Apparatus for controlling the temperature of an integrated circuit package
JPH0252263A (en) * 1988-08-17 1990-02-21 Seiko Instr Inc Semiconductor testing device
US4955380A (en) * 1988-12-15 1990-09-11 Massachusetts Institute Of Technology Flexible measurement probes
US5123850A (en) * 1990-04-06 1992-06-23 Texas Instruments Incorporated Non-destructive burn-in test socket for integrated circuit die
US5154514A (en) 1991-08-29 1992-10-13 International Business Machines Corporation On-chip temperature sensor utilizing a Schottky barrier diode structure
US5230564A (en) 1992-03-20 1993-07-27 Cray Research, Inc. Temperature monitoring system for air-cooled electric components
US5205132A (en) * 1992-06-12 1993-04-27 Thermonics Incorporated Computer-implemented method and system for precise temperature control of a device under test
US5498971A (en) 1994-02-07 1996-03-12 Zenith Data Systems Corporation Method and control circuit for measuring the temperature of an integrated circuit
DE19652046C2 (en) 1996-12-13 2003-08-28 Infineon Technologies Ag A method for determining the temperature of a semiconductor chip
US5875142A (en) 1997-06-17 1999-02-23 Micron Technology, Inc. Integrated circuit with temperature detector
JP2970628B2 (en) * 1997-11-07 1999-11-02 日本電気株式会社 High cold prober and wafer measuring method
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6279832B1 (en) * 1999-03-31 2001-08-28 Melexis Nv Temperature control system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103364032A (en) * 2013-07-15 2013-10-23 中国科学院半导体研究所 Semiconductor luminescent device or module online multifunctional test system and method
US9091721B2 (en) 2013-07-15 2015-07-28 Institute Of Semiconductors, Chinese Academy Of Sciences Multi-functional online testing system for semiconductor light-emitting devices or modules and method thereof
WO2017155707A1 (en) * 2016-03-08 2017-09-14 Temptronic Corporation System and method for temperature forcing with conductive thermal probes

Also Published As

Publication number Publication date Type
EP1301838A2 (en) 2003-04-16 application
JP2004503924A (en) 2004-02-05 application
US20020050834A1 (en) 2002-05-02 application
WO2002005051A3 (en) 2002-04-25 application
US6552561B2 (en) 2003-04-22 grant

Similar Documents

Publication Publication Date Title
US5701666A (en) Method for manufacturing a stimulus wafer for use in a wafer-to-wafer testing system to test integrated circuits located on a product wafer
US5550482A (en) Probe device
US6549026B1 (en) Apparatus and method for temperature control of IC device during test
US6415858B1 (en) Temperature control system for a workpiece chuck
US4780836A (en) Method of testing semiconductor devices using a probe card
US6191596B1 (en) Method for detecting a contact position between an object to be measured and measuring pins
US5124639A (en) Probe card apparatus having a heating element and process for using the same
US5532610A (en) Apparatus for testing semicondctor wafer
US6476627B1 (en) Method and apparatus for temperature control of a device during testing
US5489851A (en) Identification of pin-open faults by measuring current or voltage change resulting from temperature change
US7023229B2 (en) Dynamic burn-in equipment
US6104206A (en) Product wafer junction leakage measurement using corona and a kelvin probe
US6072320A (en) Product wafer junction leakage measurement using light and eddy current
US6091060A (en) Power and control system for a workpiece chuck
US6786639B2 (en) Device for sensing temperature of an electronic chip
US6791344B2 (en) System for and method of testing a microelectronic device using a dual probe technique
US6861860B2 (en) Integrated circuit burn-in test system and associated methods
US4985676A (en) Method and apparatus of performing probing test for electrically and sequentially testing semiconductor device patterns
US6741092B2 (en) Method and system for detecting an arc condition
US5047711A (en) Wafer-level burn-in testing of integrated circuits
US5473259A (en) Semiconductor device tester capable of simultaneously testing a plurality of integrated circuits at the same temperature
US5378971A (en) Probe and a method of manufacturing the same
US6911834B2 (en) Multiple contact vertical probe solution enabling Kelvin connection benefits for conductive bump probing
US5519193A (en) Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5315237A (en) Touch sensor unit of prober for testing electric circuit and electric circuit testing apparatus using the touch sensor unit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2001950901

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2001950901

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWW Wipo information: withdrawn in national office

Ref document number: 2001950901

Country of ref document: EP