WO2002003053A1 - Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages - Google Patents
Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages Download PDFInfo
- Publication number
- WO2002003053A1 WO2002003053A1 PCT/US2001/041218 US0141218W WO0203053A1 WO 2002003053 A1 WO2002003053 A1 WO 2002003053A1 US 0141218 W US0141218 W US 0141218W WO 0203053 A1 WO0203053 A1 WO 0203053A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- frequency
- photovoltages
- semiconductor
- minority carrier
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001281291A AU2001281291A1 (en) | 2000-06-29 | 2001-06-29 | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
EP01959771A EP1311825B1 (en) | 2000-06-29 | 2001-06-29 | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
DE60123971T DE60123971T2 (en) | 2000-06-29 | 2001-06-29 | METHOD FOR FAST AND ACCURATE DETERMINATION OF THE MINORITY CARRIER DIFFUSION SIZE FROM SIMULTANEOUS SURFACE PHOTOS VOLTAGES |
JP2002508066A JP2004503100A (en) | 2000-06-29 | 2001-06-29 | A quick and accurate method to determine minority carrier diffusion length from simultaneously measured surface photovoltaics. |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60/214,985 | 2000-06-29 | ||
US09/672,351 | 2000-09-28 | ||
US09/672,351 US6512384B1 (en) | 2000-06-29 | 2000-09-28 | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002003053A1 true WO2002003053A1 (en) | 2002-01-10 |
Family
ID=24698174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/041218 WO2002003053A1 (en) | 2000-06-29 | 2001-06-29 | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
Country Status (2)
Country | Link |
---|---|
US (1) | US6512384B1 (en) |
WO (1) | WO2002003053A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10217513A1 (en) * | 2002-04-19 | 2003-11-13 | Ges Foerderung Spektrochemie | Analyzing covered layers close to surface comprises exciting surface of sample to be analyzed with X-rays of two different energies, and separately measuring photoelectrons emitted and layer composition |
WO2003098197A1 (en) * | 2002-05-17 | 2003-11-27 | Uwe Hermes | Method and device for measuring the diffusion length of minority carriers in a semiconductor sample |
EP1463092A2 (en) * | 2003-03-07 | 2004-09-29 | Canon Kabushiki Kaisha | Method and device for simulating the solar radiation |
WO2005096004A1 (en) * | 2004-03-05 | 2005-10-13 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US7160742B2 (en) | 2003-07-21 | 2007-01-09 | Qc Solutions, Inc. | Methods for integrated implant monitoring |
WO2008014537A1 (en) * | 2006-08-01 | 2008-02-07 | Newsouth Innovations Pty Limited | Determining diffusion length of minority carriers using luminescence |
DE102016005478B3 (en) * | 2016-05-03 | 2016-12-29 | Lpcon Gmbh | Method and device for measuring the lifetime of charge carriers in semiconductors |
EP1438739B1 (en) * | 2001-10-26 | 2019-06-26 | Cree, Inc. | Sic bipolar semiconductor devices with few crystal defects |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661408A (en) | 1995-03-01 | 1997-08-26 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US20040010394A1 (en) * | 2002-07-15 | 2004-01-15 | Seh America, Inc. | Systems, methods and computer program products for determining contaminant concentrations in semiconductor materials |
DE10311658A1 (en) * | 2003-03-14 | 2004-09-23 | Accent Optical Technologies Inc., Bend | Procedure for determining a characteristic of a semiconductor sample, involves lighting up a surface of the semiconductor sample at the same time with overlaid energizing light source such as a laser of a specific wavelengths |
US6911350B2 (en) * | 2003-03-28 | 2005-06-28 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US6922067B1 (en) * | 2003-11-18 | 2005-07-26 | Ahbee 2, L.P. | Determination of minority carrier diffusion length in solid state materials |
US7187186B2 (en) * | 2004-03-22 | 2007-03-06 | Kla-Tencor Technologies Corp. | Methods and systems for determining one or more properties of a specimen |
JP4416566B2 (en) * | 2004-04-26 | 2010-02-17 | Sumco Techxiv株式会社 | Impurity metal concentration measurement method |
US7063991B1 (en) | 2004-07-28 | 2006-06-20 | Advanced Micro Devices, Inc. | Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same |
JP4743010B2 (en) * | 2005-08-26 | 2011-08-10 | 株式会社Sumco | Silicon wafer surface defect evaluation method |
US7521954B2 (en) * | 2006-11-16 | 2009-04-21 | Sumco Corporation | Method for determining a minority carrier diffusion length using surface photo voltage measurements |
US8093920B2 (en) * | 2008-10-06 | 2012-01-10 | Semiconductor Diagnostics, Inc. | Accurate measuring of long steady state minority carrier diffusion lengths |
US9795957B2 (en) | 2009-08-16 | 2017-10-24 | G-Con Manufacturing, Inc. | Modular, self-contained, mobile clean room |
BR112012003549B1 (en) | 2009-08-16 | 2020-08-04 | G-Con Manufacturing Inc | UNIT STRUCTURE, BIOSAFETY UNIT AND METHOD OF MAKING A PREVALIDABLE UNIT UNIT |
CH701758A1 (en) * | 2009-09-09 | 2011-03-15 | Pasan Sa | Photovoltaic cell verifying device, has filters allowing passage of part of spectrum of lamps, where variation of power of one lamp causes variation of spectral content of light received in field and produced for corresponding cell |
WO2011043048A1 (en) * | 2009-10-06 | 2011-04-14 | 株式会社神戸製鋼所 | Apparatus and method for measuring semiconductor carrier lifetime |
WO2012065070A1 (en) * | 2010-11-12 | 2012-05-18 | G-Con, Llc | Light-emitting diode (led) light bar |
EP2693630A1 (en) * | 2012-07-31 | 2014-02-05 | QIAGEN Lake Constance GmbH | Method for providing modulated excitation signals |
US9389273B2 (en) | 2012-11-13 | 2016-07-12 | International Business Machines Corporation | Solar cell characteristics determination |
WO2015057722A1 (en) | 2013-10-14 | 2015-04-23 | G-Con Manufacturing Inc. | Unit for connecting modular mobile rooms |
US9921261B2 (en) * | 2013-10-17 | 2018-03-20 | Kla-Tencor Corporation | Method and apparatus for non-contact measurement of sheet resistance and shunt resistance of p-n junctions |
JP6427269B2 (en) | 2014-07-11 | 2018-11-21 | ジー−コン マニュファクチャリング インク. | Modular parts that supply utilities to clean rooms, isolation or containment cubicles, pods or modules |
RU2578731C1 (en) * | 2015-02-09 | 2016-03-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный минерально-сырьевой университет "Горный" | Method and device for determining diffusion length of charge carriers in semiconductor plates |
WO2016190884A1 (en) * | 2015-05-28 | 2016-12-01 | Empire Technology Development Llc | Concurrent activation of multiple illumination sources for sample analysis |
WO2019059896A1 (en) | 2017-09-19 | 2019-03-28 | W. L. Gore & Associates, Inc. | Acoustic protective cover including a curable support layer |
WO2021030568A1 (en) | 2019-08-15 | 2021-02-18 | G-Con Manufacturing, Inc. | Removable panel roof for modular, self-contained, mobile clean room |
US11492795B2 (en) | 2020-08-31 | 2022-11-08 | G-Con Manufacturing, Inc. | Ballroom-style cleanroom assembled from modular buildings |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581578A (en) * | 1983-02-01 | 1986-04-08 | Hitachi, Ltd. | Apparatus for measuring carrier lifetimes of a semiconductor wafer |
US5025145A (en) * | 1988-08-23 | 1991-06-18 | Lagowski Jacek J | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements |
US5471293A (en) * | 1994-02-02 | 1995-11-28 | Advanced Micro Devices | Method and device for determining defects within a crystallographic substrate |
US5581194A (en) * | 1995-06-07 | 1996-12-03 | Advanced Micro Devices, Inc. | Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage |
US5663657A (en) * | 1994-09-26 | 1997-09-02 | University Of South Florida | Determining long minority carrier diffusion lengths |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4333051A (en) | 1980-05-28 | 1982-06-01 | Rca Corporation | Method and apparatus for determining minority carrier diffusion length in semiconductors |
US4393348A (en) | 1981-01-26 | 1983-07-12 | Rca Corporation | Method and apparatus for determining minority carrier diffusion length in semiconductors |
US4433288A (en) | 1981-07-06 | 1984-02-21 | Rca Corporation | Method and apparatus for determining minority carrier diffusion length in semiconductors |
JPS5896255A (en) | 1981-12-02 | 1983-06-08 | Toyo Commun Equip Co Ltd | Electric field sensor |
US4567431A (en) | 1983-10-31 | 1986-01-28 | Rca Corporation | Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements |
US4598249A (en) | 1984-02-29 | 1986-07-01 | Rca Corporation | Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material |
US4656419A (en) | 1984-09-20 | 1987-04-07 | Hughes Aircraft Company | Simplified solar cell material tester |
US4859939A (en) | 1987-12-21 | 1989-08-22 | The United States Of America As Represented By The Secretary Of The Army | Non-destructive testing of SOS wafers using surface photovoltage measurements |
US4851767A (en) | 1988-01-15 | 1989-07-25 | International Business Machines Corporation | Detachable high-speed opto-electronic sampling probe |
US4827212A (en) | 1988-01-20 | 1989-05-02 | Semitest, Inc. | Noninvasive method and apparatus for characterization of semiconductors |
US4891584A (en) | 1988-03-21 | 1990-01-02 | Semitest, Inc. | Apparatus for making surface photovoltage measurements of a semiconductor |
US5091691A (en) | 1988-03-21 | 1992-02-25 | Semitest, Inc. | Apparatus for making surface photovoltage measurements of a semiconductor |
US5177351A (en) | 1988-08-23 | 1993-01-05 | Lagowski Jacek J | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements |
US5087876A (en) | 1990-07-16 | 1992-02-11 | Semitest, Inc. | Apparatus and method for making surface photovoltage measurements of a semiconductor |
US5126660A (en) | 1991-01-02 | 1992-06-30 | At&T Bell Laboratories | Optical probing method and apparatus |
-
2000
- 2000-09-28 US US09/672,351 patent/US6512384B1/en not_active Expired - Lifetime
-
2001
- 2001-06-29 WO PCT/US2001/041218 patent/WO2002003053A1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581578A (en) * | 1983-02-01 | 1986-04-08 | Hitachi, Ltd. | Apparatus for measuring carrier lifetimes of a semiconductor wafer |
US5025145A (en) * | 1988-08-23 | 1991-06-18 | Lagowski Jacek J | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements |
US5471293A (en) * | 1994-02-02 | 1995-11-28 | Advanced Micro Devices | Method and device for determining defects within a crystallographic substrate |
US5663657A (en) * | 1994-09-26 | 1997-09-02 | University Of South Florida | Determining long minority carrier diffusion lengths |
US5581194A (en) * | 1995-06-07 | 1996-12-03 | Advanced Micro Devices, Inc. | Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1438739B1 (en) * | 2001-10-26 | 2019-06-26 | Cree, Inc. | Sic bipolar semiconductor devices with few crystal defects |
DE10217513B4 (en) * | 2002-04-19 | 2004-06-17 | Gesellschaft zur Förderung der Spektrochemie und angewandten Spektroskopie e.V. | Method and device for the analysis of hidden, near-surface layers by means of photoelectron spectrometry |
DE10217513A1 (en) * | 2002-04-19 | 2003-11-13 | Ges Foerderung Spektrochemie | Analyzing covered layers close to surface comprises exciting surface of sample to be analyzed with X-rays of two different energies, and separately measuring photoelectrons emitted and layer composition |
US7026831B2 (en) | 2002-05-17 | 2006-04-11 | Uwe Hermes | Method and device for measuring the diffusion length of minority carriers in a semiconductor sample |
WO2003098197A1 (en) * | 2002-05-17 | 2003-11-27 | Uwe Hermes | Method and device for measuring the diffusion length of minority carriers in a semiconductor sample |
EP1463092A2 (en) * | 2003-03-07 | 2004-09-29 | Canon Kabushiki Kaisha | Method and device for simulating the solar radiation |
US7425457B2 (en) | 2003-03-07 | 2008-09-16 | Canon Kabushiki Kaisha | Method and apparatus for irradiating simulated solar radiation |
EP1463092A3 (en) * | 2003-03-07 | 2005-01-26 | Canon Kabushiki Kaisha | Method and device for simulating the solar radiation |
US7160742B2 (en) | 2003-07-21 | 2007-01-09 | Qc Solutions, Inc. | Methods for integrated implant monitoring |
WO2005096004A1 (en) * | 2004-03-05 | 2005-10-13 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US7119569B2 (en) | 2004-03-05 | 2006-10-10 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
WO2008014537A1 (en) * | 2006-08-01 | 2008-02-07 | Newsouth Innovations Pty Limited | Determining diffusion length of minority carriers using luminescence |
US7919762B2 (en) | 2006-08-01 | 2011-04-05 | Bt Imaging Pty Ltd | Determining diffusion length of minority carriers using luminescence |
TWI400761B (en) * | 2006-08-01 | 2013-07-01 | Bt Imaging Pty Ltd | Determining diffusion length of minority carriers |
DE102016005478B3 (en) * | 2016-05-03 | 2016-12-29 | Lpcon Gmbh | Method and device for measuring the lifetime of charge carriers in semiconductors |
Also Published As
Publication number | Publication date |
---|---|
US6512384B1 (en) | 2003-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6512384B1 (en) | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages | |
US5025145A (en) | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements | |
US4333051A (en) | Method and apparatus for determining minority carrier diffusion length in semiconductors | |
TWI467637B (en) | Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current | |
US4286215A (en) | Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials | |
US6693286B2 (en) | Method for evaluating the quality of a semiconductor substrate | |
US8232817B2 (en) | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor | |
US5177351A (en) | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements | |
US5977788A (en) | Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer | |
US20110301892A1 (en) | System and method for characterizing the electrical properties of a semiconductor sample | |
US7642772B1 (en) | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers | |
EP1311825B1 (en) | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages | |
US4870352A (en) | Contactless current probe based on electron tunneling | |
US8093920B2 (en) | Accurate measuring of long steady state minority carrier diffusion lengths | |
EP0545523A2 (en) | Method for evaluation of spatial distribution of deep level concentration in semiconductor crystal | |
US4924096A (en) | Non-contact testing of photovoltaic detector arrays | |
US6922067B1 (en) | Determination of minority carrier diffusion length in solid state materials | |
US7026831B2 (en) | Method and device for measuring the diffusion length of minority carriers in a semiconductor sample | |
CN116298768A (en) | Defect test system and test method for carbon nano tube thin film transistor | |
US4885534A (en) | Direct measurement of photodiode impedance using electron beam probing | |
US7265571B2 (en) | Method and device for determining a characteristic of a semiconductor sample | |
KR20000029046A (en) | Method and apparatus for sample current spectroscopy surface measurement | |
JPS63312649A (en) | Simultaneously measuring method for impurity level and carrier life in semiconductor | |
Dittrich | Correlation Between Photoreflectance and CV Measurements of n‐GaAs Epitaxial Layers | |
Goodman | Improvements in method and apparatus for determining minority carrier diffusion length |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2002 508066 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001959771 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2001959771 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 2001959771 Country of ref document: EP |