WO2001094980A1 - Ionising radiation detector comprising polymer semiconductor material - Google Patents
Ionising radiation detector comprising polymer semiconductor material Download PDFInfo
- Publication number
- WO2001094980A1 WO2001094980A1 PCT/GB2001/002457 GB0102457W WO0194980A1 WO 2001094980 A1 WO2001094980 A1 WO 2001094980A1 GB 0102457 W GB0102457 W GB 0102457W WO 0194980 A1 WO0194980 A1 WO 0194980A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ionising radiation
- detector
- radiation detector
- electrodes
- detector body
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Definitions
- the present invention is concerned with radiation detectors.
- Ionising radiation is detected through the energy it deposits in matter.
- Detector area is paramount in the clinical field.
- An object of the present invention is to overcome one or more of the
- a detector body comprising polymer semiconductor material or oligomer
- detector body by ionising radiation.
- Conjugated polymers and oligomers are ideally suited to large
- the materials can be moulded from solution.
- the substrate can be planar or shaped
- the polymer or oligomer material is conjugated.
- polyalkylthiophenes in particular being known to be
- the detector body may be formed as a film upon a substrate.
- the means for detecting the electron hole pairs preferably comprise a pair of
- Fig. 1 illustrates in schematic side view the structure of a detector embodying
- Fig. 2 is a diagram of a circuit incorporating the detector
- Figs. 3a and 3b are energy level diagrams illustrating the band structure in the
- the detector 1 illustrated in Fig. 1 comprises a substrate 2 upon which is a
- an upper electrode 8 This is illustrated only
- a pixellated set of electrodes may in practice be provided In the
- the detector body 6 and the right hand edge corresponds to its positively biased side.
- the Fermi level E F has an energy well below the conduction band, so
- charge on the two electrodes is the current which, when detected in the external circuit, indicates the presence of the ionising radiation.
- the current is electronically detected - in Fig. 2 a transistor T and associated
- load resistor R are used. The circuit will be considered in more detail below.
- detector body 6 of a second material This second material can be mixed in at the
- Buckminsterfullerene C60
- the detector body 6 needs to be thick enough to give an acceptable
- polymer film is a regioregular polyalkylfhiophene with a head to
- tail count approaching 100% It may be formed as a film by casting or dip coating
- the detector body 6 is formed as an oligomer film, similar
- Electrodes 4, 8 Hence the electrode and body materials are typically chosen such as
- junctions may be utilised.
- the lower electrode 4 is, in the illustrated embodiment, a metal film formed
- the metal of the lower electrode may be replaced with a very conductive polymer.
- the metal of the lower electrode may be
- aluminium or calcium may be used for the upper electrode.
- One or both of the electrodes should be at least substantially transparent to the
- the upper electrode can be pixellated, with bonded wires
- electrode 8 - wire bonds to a gold film can be made provided adhesion of the gold is
- Electrodes include silver and Indium/Tin
- ITO ITO Oxide
- the substrate 2 can be of glass or plastics.
- negative gate pulse is applied to the gate of the p channel transistor T which stores
- the gate is
- load is likely to be a second p channel transistor.
- oligomer material which may be the same material used for the detector body.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002502474A JP2004501367A (en) | 2000-06-03 | 2001-06-04 | Ionizing radiation detector using polymer semiconductor material |
EP01934199A EP1287384A1 (en) | 2000-06-03 | 2001-06-04 | Ionising radiation detector comprising polymer semiconductor material |
US10/297,283 US20040036066A1 (en) | 2000-06-03 | 2001-06-04 | Ionising radiation detector comprising polymer semiconductor material |
AU2001260501A AU2001260501A1 (en) | 2000-06-03 | 2001-06-04 | Ionising radiation detector comprising polymer semiconductor material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0013472.6 | 2000-06-03 | ||
GBGB0013472.6A GB0013472D0 (en) | 2000-06-03 | 2000-06-03 | Ionising radiation detector |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001094980A1 true WO2001094980A1 (en) | 2001-12-13 |
Family
ID=9892888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2001/002457 WO2001094980A1 (en) | 2000-06-03 | 2001-06-04 | Ionising radiation detector comprising polymer semiconductor material |
Country Status (6)
Country | Link |
---|---|
US (1) | US20040036066A1 (en) |
EP (1) | EP1287384A1 (en) |
JP (1) | JP2004501367A (en) |
AU (1) | AU2001260501A1 (en) |
GB (1) | GB0013472D0 (en) |
WO (1) | WO2001094980A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003347565A (en) * | 2002-05-29 | 2003-12-05 | Toray Ind Inc | Photovoltaic element |
WO2005064704A1 (en) * | 2003-12-30 | 2005-07-14 | The University Of Liverpool | Charge coupled device |
WO2013017915A1 (en) * | 2011-08-02 | 2013-02-07 | Alma Mater Studiorum Universita Di Bologna | Direct detectors for ionizing radiations, and methods for producing such detectors |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008520999A (en) * | 2004-11-23 | 2008-06-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Radiation dosimeter |
JP2014529728A (en) * | 2011-08-02 | 2014-11-13 | アルマ・マテール・ストゥディオルム・ウニベルシータ・ディ・ボローニャAlma Mater Studiorum Universita Di Bologna | Intrinsic direct detector of ionizing radiation and method of manufacturing the detector |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4445036A (en) * | 1981-04-21 | 1984-04-24 | Irt Corporation | Solid state fast-neutron spectrometer/dosimeter and detector therefor |
US4641037A (en) * | 1984-11-21 | 1987-02-03 | The United States Of America As Represented By The United States Department Of Energy | Organic metal neutron detector |
JPH03273687A (en) * | 1990-03-22 | 1991-12-04 | Matsushita Electric Ind Co Ltd | Radiation absorbent material and radiation detector |
US5693947A (en) * | 1993-04-28 | 1997-12-02 | The University Of Surrey | Radiation detectors |
WO1998005072A2 (en) * | 1996-07-25 | 1998-02-05 | British Nuclear Fuels Plc | Radiation sensors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4204216A (en) * | 1978-05-04 | 1980-05-20 | University Patents, Inc. | Electrically conducting doped polyacetylene film exhibiting n-type electrical conductivity and method of preparing same |
US4214916A (en) * | 1979-02-05 | 1980-07-29 | Arthur Bradley | Thin film photovoltaic converter and method of preparing same |
GB8712057D0 (en) * | 1987-05-21 | 1987-06-24 | British Petroleum Co Plc | Optical modulators |
GB2296815B (en) * | 1994-12-09 | 1999-03-17 | Cambridge Display Tech Ltd | Photoresponsive materials |
FR2759495B1 (en) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | POLYMER SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE RECTIFIER FUNCTION AND METHOD FOR MANUFACTURING SUCH A DEVICE |
GB9806066D0 (en) * | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
US20020031602A1 (en) * | 2000-06-20 | 2002-03-14 | Chi Zhang | Thermal treatment of solution-processed organic electroactive layer in organic electronic device |
-
2000
- 2000-06-03 GB GBGB0013472.6A patent/GB0013472D0/en not_active Ceased
-
2001
- 2001-06-04 EP EP01934199A patent/EP1287384A1/en not_active Withdrawn
- 2001-06-04 US US10/297,283 patent/US20040036066A1/en not_active Abandoned
- 2001-06-04 AU AU2001260501A patent/AU2001260501A1/en not_active Abandoned
- 2001-06-04 WO PCT/GB2001/002457 patent/WO2001094980A1/en not_active Application Discontinuation
- 2001-06-04 JP JP2002502474A patent/JP2004501367A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4445036A (en) * | 1981-04-21 | 1984-04-24 | Irt Corporation | Solid state fast-neutron spectrometer/dosimeter and detector therefor |
US4641037A (en) * | 1984-11-21 | 1987-02-03 | The United States Of America As Represented By The United States Department Of Energy | Organic metal neutron detector |
JPH03273687A (en) * | 1990-03-22 | 1991-12-04 | Matsushita Electric Ind Co Ltd | Radiation absorbent material and radiation detector |
US5693947A (en) * | 1993-04-28 | 1997-12-02 | The University Of Surrey | Radiation detectors |
WO1998005072A2 (en) * | 1996-07-25 | 1998-02-05 | British Nuclear Fuels Plc | Radiation sensors |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 016, no. 091 (E - 1174) 5 March 1992 (1992-03-05) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003347565A (en) * | 2002-05-29 | 2003-12-05 | Toray Ind Inc | Photovoltaic element |
WO2005064704A1 (en) * | 2003-12-30 | 2005-07-14 | The University Of Liverpool | Charge coupled device |
US7402852B2 (en) | 2003-12-30 | 2008-07-22 | The University Of Liverpool | Charge coupled device having a back electrode |
WO2013017915A1 (en) * | 2011-08-02 | 2013-02-07 | Alma Mater Studiorum Universita Di Bologna | Direct detectors for ionizing radiations, and methods for producing such detectors |
CN103842850A (en) * | 2011-08-02 | 2014-06-04 | 博洛尼亚大学 | Direct detectors for ionizing radiations, and methods for producing such detectors |
Also Published As
Publication number | Publication date |
---|---|
US20040036066A1 (en) | 2004-02-26 |
GB0013472D0 (en) | 2000-07-26 |
EP1287384A1 (en) | 2003-03-05 |
JP2004501367A (en) | 2004-01-15 |
AU2001260501A1 (en) | 2001-12-17 |
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