WO2001075949A1 - Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device - Google Patents

Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device Download PDF

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Publication number
WO2001075949A1
WO2001075949A1 PCT/JP2001/002283 JP0102283W WO0175949A1 WO 2001075949 A1 WO2001075949 A1 WO 2001075949A1 JP 0102283 W JP0102283 W JP 0102283W WO 0175949 A1 WO0175949 A1 WO 0175949A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron
multiaxis
exposure apparatus
guns
semiconductor device
Prior art date
Application number
PCT/JP2001/002283
Other languages
French (fr)
Inventor
Shinichi Hamaguchi
Takeshi Haraguchi
Hiroshi Yasuda
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000102619 priority Critical
Priority to JP2000-102619 priority
Priority to JP2000-251885 priority
Priority to JP2000251885 priority
Priority to JP2000-342656 priority
Priority to JP2000342656 priority
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2001075949A1 publication Critical patent/WO2001075949A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06341Field emission
    • H01J2237/0635Multiple source, e.g. comb or array
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/12Lenses electrostatic
    • H01J2237/1205Microlenses

Abstract

An electron beam exposure apparatus characterized by comprising electron guns for producing electron beam, voltage control means electrically connected to the electron guns and adapted to apply different voltages to the electron guns, and a multiaxis electron lens for independently focusing the electron beams. The voltage control means preferably applies different voltages to the electron guns according to the strength of magnetic field which is produced by the multiaxis electron lens and acts on the electron beams. The voltage control means may apply different voltages to the electron guns so that the focal points of the electron beams projected onto a wafer may be the same.
PCT/JP2001/002283 2000-04-04 2001-03-22 Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device WO2001075949A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000102619 2000-04-04
JP2000-102619 2000-04-04
JP2000-251885 2000-08-23
JP2000251885 2000-08-23
JP2000342656 2000-10-03
JP2000-342656 2000-10-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020027013242A KR20020084288A (en) 2000-04-04 2001-03-22 Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
WO2001075949A1 true WO2001075949A1 (en) 2001-10-11

Family

ID=27342983

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/002283 WO2001075949A1 (en) 2000-04-04 2001-03-22 Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20010028038A1 (en)
KR (1) KR20020084288A (en)
TW (1) TW512423B (en)
WO (1) WO2001075949A1 (en)

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US9412206B2 (en) 2012-02-21 2016-08-09 Pelican Imaging Corporation Systems and methods for the manipulation of captured light field image data
US9210392B2 (en) 2012-05-01 2015-12-08 Pelican Imaging Coporation Camera modules patterned with pi filter groups
CN104508681B (en) 2012-06-28 2018-10-30 Fotonation开曼有限公司 A camera for detecting a defective array, an optical system and method and device array sensors
US20140002674A1 (en) 2012-06-30 2014-01-02 Pelican Imaging Corporation Systems and Methods for Manufacturing Camera Modules Using Active Alignment of Lens Stack Arrays and Sensors
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US9143711B2 (en) 2012-11-13 2015-09-22 Pelican Imaging Corporation Systems and methods for array camera focal plane control
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9462164B2 (en) 2013-02-21 2016-10-04 Pelican Imaging Corporation Systems and methods for generating compressed light field representation data using captured light fields, array geometry, and parallax information
US9374512B2 (en) 2013-02-24 2016-06-21 Pelican Imaging Corporation Thin form factor computational array cameras and modular array cameras
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US9124831B2 (en) 2013-03-13 2015-09-01 Pelican Imaging Corporation System and methods for calibration of an array camera
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US10122993B2 (en) 2013-03-15 2018-11-06 Fotonation Limited Autofocus system for a conventional camera that uses depth information from an array camera
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US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
US9443699B2 (en) * 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
EP3358599A1 (en) 2014-05-30 2018-08-08 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using row calibration
JP2016018995A (en) 2014-07-10 2016-02-01 アイエムエス ナノファブリケーション アーゲー Customization of particle beam drawing machine using convolution kernel
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Publication number Priority date Publication date Assignee Title
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JP4856073B2 (en) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー.ブイ. The charged particle beam exposure system

Also Published As

Publication number Publication date
US20010028038A1 (en) 2001-10-11
KR20020084288A (en) 2002-11-04
TW512423B (en) 2002-12-01

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