WO2001022523A1 - High-frequency switch circuit - Google Patents

High-frequency switch circuit Download PDF

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Publication number
WO2001022523A1
WO2001022523A1 PCT/JP2000/006458 JP0006458W WO0122523A1 WO 2001022523 A1 WO2001022523 A1 WO 2001022523A1 JP 0006458 W JP0006458 W JP 0006458W WO 0122523 A1 WO0122523 A1 WO 0122523A1
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WO
WIPO (PCT)
Prior art keywords
switching
transmission line
capacitance
impedance
circuit
Prior art date
Application number
PCT/JP2000/006458
Other languages
French (fr)
Japanese (ja)
Inventor
Hisanori Uda
Hiroaki Hayashi
Original Assignee
Kabushiki Kaisha Toyota Chuo Kenkyusho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP26653799 priority Critical
Priority to JP11/266537 priority
Application filed by Kabushiki Kaisha Toyota Chuo Kenkyusho filed Critical Kabushiki Kaisha Toyota Chuo Kenkyusho
Publication of WO2001022523A1 publication Critical patent/WO2001022523A1/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices

Abstract

A high-frequency switch circuit that controls pass/block of a signal transmitted through a high-frequency transmission line by arranging a switching element between the high-frequency transmission line and the ground. An impedance matching circuit is constituted by an adjusting transmission line comprising at least two lines having different line impedance and connected in series to adjust the reflection coefficient. The line impedance and the length of each line constituting the adjusting transmission line are determined so as to satisfy A = 0, B = jZ, C = j/Z, and D=0 where A, B, C and D are respectively the elements W11, W12, W21 and W22 of a transmission matrix (W) of a cascade circuit comprising the capacitance of a switching element in an OFF state and the adjusting transmission line, and Z is the impedance when viewed from the connecting terminal.

Description

High frequency switch circuit technology

 According to the present invention, a switching element is arranged between a high-frequency transmission line and a ground to pass a signal on the high-frequency transmission line. It relates to high-frequency switch circuits that can be switched on or off.

 This study is applicable to, for example, a high-frequency switch circuit that controls the passage / blocking of high-frequency signals in the 10 GHz band. Can be obtained. Further, it can be used for branching and synthesizing high frequency signals. Background technology

 Conventionally, a PIN diode or the like is provided on a high-frequency transmission line such as a co-planer or a micro strip and a switching element. It was configured as a MMIC (monolithic microwave integrated circuits) as a high frequency switch 'circuit for interrupting and branching signals. It is known for its power.

The characteristics of this high-frequency switch circuit are that the insertion loss when passing high-frequency signals is small, and the transmission loss when high-frequency signals are interrupted is small. It is required that the amount of leakage of the signal be small, and immediately, that the isolation force be large. The smaller the on-resistance of the switching element inserted between the transmission line and the ground, the greater the isolation. . In general, the smaller the switching element's off-capacity, the lower the switching element's capacity. 'y Y: ^ ^ ¾ ¾ times ^ y Y. MH i ¾i ω (¾ι JJ

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 The impedance when looking at the element side becomes sufficiently larger than the impedance as seen from the connection end. A special feature is that an inverter matching circuit has been set up between the switching element and the switching element.

 Of signal transmission in the high frequency switch circuit

, Either direction is possible. Immediately, the connection end is turned on, and the signal is sent from this input end to the high-frequency switch circuit side, and the high-speed switch is used as the connection-output end. It can be used in both directions, from the circuit side to the output end side. For example, when a signal is selected from one multi-branch route, or when only one signal from a multi-branch route is selected. It can be used for both transmission and transmission to the selected route. If the number of route selections is determined in advance, multiple

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¾, any other impedance is acceptable. The other impedance is, for example, a characteristic that is opposite to the connection end and is converted from the characteristic impedance card to the corresponding impedance. This is when an impedance converter is installed. Around 5 V

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It is. In addition, since the impedance matching circuits are provided on both sides of the ring element, high frequency switching is possible in the signal passing state. Regardless of the circuit impedance of the circuit, the connection of the high-frequency switch connected to the wave-switched circuit can be seen regardless of the impedance of the circuit. From the terminal on the opposite side to the terminal on the side opposite to the high end (excessive circumference of the load path, other

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I can't. In other words, the signal path is the same as that of the actual circuit, which means that there is no 问 jl ¾ wave switch circuit. Now. Therefore, if the branch circuit is used, and if this high-frequency switch circuit is used, one line is connected to the main line of the main circuit. By installing a peek converter, it is possible to connect a load or a signal source of an arbitrary impedance to the branch line.

 Another finding is that the impedance matching circuit is composed of a transmission line having a length of the transmission signal / 4, a person / 4 transmission line, a connection end and a λ / 4 transmission line. The route is a series of valleys inserted in series.

 Immediately, the switching element is fixed S between the end and the ground, and the capacity element is arranged in the transmission line in series with the HXS. Yes.

According to this configuration, when the switching element is in an off state, impedance matching at the connection end can be realized. Therefore, by minimizing the on-resistance of the switching element as much as possible, when the switching element is in the on state, the connection resistance can be reduced. The impedance when looking at the high frequency switch circuit side from the continuation terminal force is made sufficiently larger than the impedance when looking at the opposite side. be able to . So, as mentioned above, the insertion

It is possible to improve the isolation characteristics by reducing the sag loss and reflection loss of the special transmission route.

Another statement is that when the capacitance value of the capacitance element is C and the capacitance value when the switching element is in the off state is Cd, then c = 1 / ( ω 2 · C d · Z 2 ). However, Z is a line impedance of the person / 4 transmission line, which is seen from the connection end on the opposite side of the switching element from the connection element. Ω is the angular frequency and the line width is reduced.

 The capacity of the capacity element to be inserted in the series is as follows: 4. The value given by the S value is smaller than the size of the element.

 It is a sign.

 With this configuration, even if the capacitance value of the silicon element is increased, the insertion loss is reduced and the valley m value is increased. It can improve the characteristics of bridges, bridges, and connections that can be created.

 Another finding is that the in-pice matching circuit is arranged on one side to the arrangement position of the switching element, and the transmission signal wavelength / The first 4/4 length transmission line and the difficulty of the switching element

And a second transmission line having a transmission signal wavelength length and a first element / 4 transmission line having a sung element connected to one end thereof. A first capacitance element inserted in series with the line and a second I / 4 transmission other end connected with one switching element, and a line in series with the line. It is characterized by the fact that it is the second capacitive element inserted, that is, the series capacitive element and the λ / 4 transmission are transmitted to the transmission paths on both sides of the switching element. This configuration, in which a connection circuit to the line is provided, can achieve the above effects. . In addition, it is possible to realize the equivalent of the fact that the switching element is in the state and this high-frequency switch circuit is not present. Immediately, regardless of the line length of the high-frequency switch circuit, the connection end of the high-frequency switch circuit and the terminal of the high-frequency switch circuit between the connection end and the high-frequency switch circuit With respect to the impedance coefficient of the impediment.

In addition, the other statement is that the capacitance value C of the first and second children is expressed as follows: when the switching element has a capacitance value Cd of 1 / C. (ω 2 • Ζ 2 · 2), where Z is the line inductance of the input / 4 transmission line and ω is the angle of the line. C'mon

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 The opening of the switching element on both sides of the switching element is provided with an impedance matching circuit for the impedance of the reciprocal element, and the switching element is turned off. One half of the state capacitance value is allocated to each impedance matching circuit. Therefore, when determining the series capacity C, C d / 2 is used.

 In the case of, the route impedance Z is optional. Immediately, the impedance may be the impedance seen from the connection end on the opposite side, or may be the characteristic impedance. In any case, the input impedance and the output impedance are λ / 2 transmission lines because they are equivalent to the human / two transmission line. It will no longer be related to the road impedance.

 In addition, the other explanation is that the impedance matching circuit is composed of an adjusting transmission line and a switching element for adjusting the reflection coefficient. Equivalent to the installation value in the off state, it is installed at the other end of the regulated transmission line with one end connected to the switching element and at the ground. It is characterized by the fact that it has a capacity element and a color.

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8S ^ 90 / 00df / X3d CZSZZ / 10 OAV The characteristic of the switch is that it can be adjusted on both sides of the transmission path of the switching element.

^ | A transmission line has been set up. Thus, as described above, the same effect as the configuration in which the impedance matching circuits are arranged on both sides can be obtained.

Also, the other statement is that the length L of the first and second regulated transmission lines is L = λ cos -1 (ZωC) / 27 /, respectively. Where Ζ is the impedance of each of the adjusted transmission lines, ω is the angular frequency, and C is the capacitance value of the capacitance element. The result is a specific determination of the length of the conditioned transmission line. In this configuration, it is only necessary that the line impedances of the first adjusted transmission line and the second adjusted transmission line be equal. Also, it does not have to be the impedance looking left from the connection terminal. Any impedance is good

 With the configuration of the above, the above-mentioned effects can be obtained.

 Another point is that the impedance matching circuit must have at least two or more line routes to adjust the number of reflections. It is characterized by the fact that it consists of a regulated transmission line consisting of a series connection of the given lines.

 By connecting a plurality of different routes of different impedances in series 9 in a straight line, when the switching element is in the off state, the connection At the end, impedance matching can be achieved, and when the switching element is in the idle state, the high-frequency switch turns from the connection end. It is possible to make the impedance looking at the road much larger than the impedance looking at the opposite side. Thus, the above-described effects can be obtained.

Also in the case of the configuration, the impedance alignment is higher than when the impedance matching is performed by the series capacitance element. The range of frequencies that can be combined is widened. The theory is that the phase shift S of the voltage and reflection coefficient due to the capacitance when the switching element is turned off increases, but it depends on the series element. A phase change that is equal to the phase change amount of the cut-off reflection coefficient can be realized by a line having a different line impedance. . The change of the voltage reflection coefficient on the Smith chart is almost the same as when the impedance is matched by the parallel capacitance element. Ο

 In addition, the other light is that the impedance matching circuit is located at the rooster position of the switching element, and is located at one side of the rooster. A first adjustment transmission consisting of a straight-through gun on a line with at least two or more routes to adjust the number of firings. The transmission line and the switching element are arranged on the other side with respect to the arrangement position i of the switching element, and at least two elements are provided for adjusting the reflection coefficient. It is characterized in that it consists of a second regulated transmission line consisting of a series connection of different lines of the above-mentioned line impedance.

 In this configuration, an adjustment transmission line is provided on both sides of the switching element. Therefore, the same effect as the above-described configuration provided on both sides can be obtained.

Another explanation is to find out the capacity when the switching element is in the off state and the transmission line W of the cascaded circuit with the adjusted transmission line. W i, = A, W ; 2 = B, W 2 , = C, W 2 2 = D, and the impedance that sees the opposite end from the connection terminal is Z At this time, the line impedance and the length of each line constituting the adjusted transmission line are represented by A: = 0, B2jZ, C = j / Z, D2 The feature is that it is set to satisfy 0.

This is due to the capacitance and the switching element when it is off. Equivalently, the adjusted transmission line is equivalent to a line impedance force Z and a length force: 1/4. As a result, when the switching element is in an off state, impedance matching can be realized at the connection end, and the switching element can be realized. When the child is in the on state, the smaller the on resistance, the larger the impedance when looking at the high frequency switch circuit side from the connection end. can do . As a result, insertion loss can be reduced, and the characteristics of the isolation can be improved.

 Another explanation is that the regulated transmission line is composed of two lines of equal length and that the line

The impedance Z a , Z b is Z a = Z (1-ω CZ) 1 2 , Z b = Z / (1-ω CZ) 17 2 , and the length L is L = Λ / [2 7Γ (2 - ω CZ) 1/2], provided, however, C is S w Tsu capacitance value when the switch in g element is off state, Z is connected end or al opposition It is characterized by the fact that it is a look-ahead.

 This is a concrete example of an adjusted transmission line.

Another finding is the cascade of the first regulated transmission line and the capacitance consisting of the capacitance value / 2 when the switching element is in the off state. Let the elements of the transmission matrix W be W ii = A! , W! 2 = Β,,

When W 2 C W 2 2 = D, the line impedance and the length of each line constituting the adjusted transmission line are denoted by A and =

0, B, = jZ, C, = j / Z, D, = 0, so that the second regulated transmission line and the switching element are The elements of the transmission cascade W of the cascaded circuit with the capacity value of the capacity value in the state of フ / 2 are represented by W i, = A 2 , W, 2 = B 2, W 2 1 If CW 2 2 2 D 2 , the line impedance and length of each line constituting the adjusted transmission line are A 2 = 0, °, ¥

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8S ^ 90 / 00df / X3d £ Z / ΐθ OAV This specifically gives an example of an adjusted transmission line when an adjusted transmission line is provided on both sides of the switching element. .

 Further, in the description of any of claims 1, 2, 3, 5, 11, and 12, the switching element is the third key. A first transmission element and a second switching element disposed on both sides of the third transmission line, and a third transmission element; It is characterized by being formed by a 7-inch circuit consisting of: 'With this configuration, when two switching elements are on, the signal is cut off and the isolation rises. <Also, in the other description, the capacitance of the first switching element in the off state of the first switching element is C a + C b and the second capacitance is C a + C b. Assuming that the capacitance of the switching element in the off state is Cb, the capacitance 、 Cb, the third regulated transmission line, and the capacitance C In the input and output ends of the symmetrical 7-inch circuit composed of b, when both switching elements are in the off-state, It is characterized in that the length of the third adjusted transmission line is determined so that the impedance is adjusted.

BP That is, the capacity of the first switching element is divided into two parts, and a part thereof, the second switching element, and the third adjusted transmission line are divided into two parts. A symmetrical type circuit is constructed, and impedance matching is performed at the input / output terminals of the circuit. As a result, when the first and second switching elements are in the off state, the impedance matching circuit includes the capacitance iCa. It is good if the impedance is adjusted in the circuit. According to this configuration, when the second switching element is in the on state, the connection point force of the first switching element and the second switching element are used. Since the impedance when looking at the switching element side is not set to infinity, the first switching element and the second switching element are not set. Lee pitch in g of the element. Capacity ing and of the Son and of the power of 5 available-you Ku can die. In addition, other studies have found that the capacitance when the first switching element is in the off state is Ca + Cb, and the capacitance when the second switching element is off. Assuming that the capacitance at the time of the state is Cb, a symmetrical type composed of the capacitance Cb, the third regulated transmission line, and the capacitance Cb is used. When the input and output ends of the circuit are impedance-matched and the second switching element is on, the first switch is turned on. The third adjustment transmission is performed so that the impedance of the second switching element viewed from the connection point force of the switching element is substantially infinite. The feature is that the line impedance and length of the transmission line are determined.

 According to this configuration, when the second switching element is in the ON state, the power of the first switching element and the second switching element are changed. The higher the impedance when looking at the side, the greater the possible isolation.

 In another invention, the capacitance of the first switching element and the capacitance of the second switching element in the off state are denoted by Cb. Symmetrically composed of an electrostatic capacitance Cb, a third regulated transmission line, and an electrostatic capacitance Cb at the input end and output end of the 7Γ-type circuit It is characterized in that the length of the third adjusted transmission line is determined so that the impedance is adjusted.

 In the study of claim 18, the capacity of the first switching element and the capacity of the second switching element are made equal.

 Thus, as in the case of claim 18, it is possible to increase the capacity of both of the switching elements.

In other inventions, the capacitance when the first switching element and the second switching element are in the off state is C1). The capacitance C b, the third regulated transmission line, the capacitance C l) The input and output ends of the symmetrical 7Γ type circuit composed of) are impedance-matched at the input and output ends, and the second switching element is turned on. In the state, the impedance when viewing the second switching element side from the connection point of the first switching element becomes substantially infinite so that the impedance becomes almost infinite. It is characterized in that the line impedance and length of the adjusted transmission line of 3 are determined.

 This investigation is based on the case where the capacities of the first switching element and the second switching element are made equal in the invention of claim 19. .

 Thus, as in the case of the determination of claim 19, the isolation can be further improved.

Another claim is claim 18 or claim 20 in which the length L of the third regulated transmission line is L = λ than · 1 (2 / ωC b Z) ./ 2π, where Z is the characteristic impedance ... ω is characterized by being the angular frequency. As a result, it is possible to realize concretely the impedance matching.

Another invention is the invention of claims 19 or 21 wherein the length L of the third regulated transmission line is given by: = ぇ COS ' 1 (ω ωC b) / 2 π, the line path Lee emissions e e da down scan Z c, Z c = Z / - Ru Ah in (1 (Z ω C b) 2) '7, provided, however, Z 7Γ · are symmetric The impedance matching from the connection end of the circuit capacity Cb to the impedance matching circuit The impedance seen from the circuit side, and Cb is the second switching element The off-state capacitance value of the child, ω, is characterized by being an angular frequency.

 This relational expression makes it possible to specifically improve impedance matching and improve the isolation.

Also, the other invention is that the impedance matching of the connection end side with respect to the electrostatic capacity C a in the examination of the claims 18 or 19. The feature is that the circuit constant of the circuit is determined. o

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 \ V

 Λ ヽ times 0 ί J)

 Θ 3

Θ> j ΰ ΰ a Ό Θ m Q Λ m d Θ

1 Ό Λ Η 〇 \

U 〇 = ¾: Θ Λ 1> J m m ヽ Λ ► J V V II

V V AJ Q 1 11¾ Λ E3 (SI

〇 o

By this relationship, two asymmetrical impedance-matching circuits can be concretely set.

 Another invention is described in claim 25 in which the impedance matching circuit is arranged on one side with respect to the arrangement of the switching element. The transmission line for adjusting the reflection coefficient and the arrangement of the switching element are arranged on the other side while the arrangement of the switching element is concealed and the adjustment of the reflection coefficient is performed. The second transmission line to be adjusted and the switching element described above are connected to one end, and the switching element is disposed between the other end of the adjustment transmission line 1 and the ground. The second capacitance element is disposed at the other end of the second regulated transmission line, to which the switching element is connected at one end, and at the ground, and at the other end of the second adjustment element. The first value of the fortress element, C a, and the second value of the second, C c, the value of the capacity element are Cb. Price adjustment I put it

 Depending on your relationship, the other two asymmetric conductance signals may be different.

A matching circuit can be configured.

In addition, the other finding is that, in the description, the length L a of the first adjusted transmission line is La a cos -1 (ZωC a) / 2T, road Lee emissions e e da down scan Z a is, Z a two Z /. - Ri Oh in (1 (Z ω C a) 2) 1 χ 2, the length L b of the second adjustment transmission line path , L b = λ cos- 1 (Z ω C b) / 2 ττ, and the path impedance Z b is Z b = Ζ / (1-(ω ω C a) 2 ) 1 ζ 2 However, Z is characterized in that it is the impedance when looking at the opposite side to the connection end, and ω is the angular frequency.

 By this relationship, the two asymmetric impedance matching circuits can be specifically set.

In another invention, the impedance matching circuit is disposed on one side of the EE iffl position i of the switching element, and the reflection matching circuit is provided. A straight-line tangent of two equal-length lines to adjust the number

Get together on the subway route

 Da double road

The first adjustment transmission line consisting of the continuation and the arrangement position of the switching element are arranged on the other side with respect to the arrangement position of the switching element, and adjust the reflection coefficient. A straight-line connecting force consisting of two lines of equal length, a second regulating transmission line consisting of two lines, and a first regulating line consisting of the line channel Lee emissions e e da down scan Z丄a, ZL b, Z i a = Z (1 - ω C a ZZ lb = Z / (l- w C a Z) 1/2, the length L i Is

L! · = Λ / [2π (2-ωC aZ) 1 2 I, the second adjustment circuit's line impedance Z 2 a , Z 2 b is Z 2 a 2 Z (1-ω C b

Z) 1/2, Z 2 h = Z / (l-w C b Z) 1 2 , length L 2 is

= Λ / [2 7Γ (2- ω C b Z) 1/2], provided, however, Z is feature a Oh Ru this in fin e e da down scan viewed connection end or al opposition side And

 According to this relationship, it is possible to specifically set two other asymmetrical impedance matching circuits. It is characterized in that a high frequency switch circuit is connected at a connection end to form a multiple circuit ii: to form a branch circuit.

In other words, if the high frequency switch circuit of the present invention is a single trunk line, it will be a bidirectional switch circuit that controls signal overload and interruption. S power. In addition, if this high frequency switch is installed on a branch line that is divided into a single trunk line or a number, it can be used as a branch switch circuit. There is. Immediately, any one of a plurality of branch lines can be passed through, and the branch through which this signal passes can be selectively cut off. Can be replaced. In addition, it is possible to transmit a signal from a line side to one trunk line side by setting an arbitrary one of a plurality of lines as a passing state. -. Like this, in this branch switch The direction in which the signal flows can be used in both directions. Brief explanation of drawings

 FIG. 1 is a circuit diagram showing a configuration of a high-frequency switch circuit according to a first concrete example of the present invention.

 2 (a) to 2 (c) are structural diagrams showing a portion where a series capacitance element is formed.

 Fig. 3 is an explanatory diagram explaining the principle on a Smithchart.

 Fig. 4 is a characteristic diagram showing characteristic values.

 Fig. 5 (a) and (b) show the structure of the capacitance element for a direct current cut used in the conventional high frequency switch circuit. Fig.

 FIGS. 6 (a) and (b) are explanatory diagrams showing the configuration of the high frequency switch circuit according to the second embodiment.

 FIG. 7 is an explanatory diagram showing a configuration of a high-frequency switch circuit according to the third embodiment.

 FIGS. 8 (a) and (b) are explanatory diagrams showing the configuration of a high-frequency switch circuit according to a modified example of the first embodiment.

 Fig. 9 (a) and (b) are circuit diagrams showing the applications.

 FIGS. 10 (a) and (b) are explanatory diagrams showing the configuration of a high-frequency switch circuit according to a modified example of the second embodiment.

 FIGS. 11 (a) and (b) are explanatory diagrams showing the configuration of a high frequency switch circuit according to a modified example of the third embodiment.

FIGS. 12 (a) to 12 (c) show the configuration of a high-frequency switch circuit according to a modified example of the third embodiment, a conventional circuit, and their special features. Explanatory diagram showing a comparison of gender. ° 园 tin ^ ^ ^

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£ 1-90 / 00dT / X3d ezszz / io OAV Fig. 28 shows the equivalent circuit of the high frequency switch circuit. FIGS. 29 (a) and (b) are explanatory diagrams showing the construction of a high-frequency switch circuit according to another embodiment.

 FIGS. 30 (a) and (b) are explanatory diagrams showing the formation of a high frequency switch circuit according to another example of the embodiment.

 FIGS. 31 (a) and (b) are explanatory diagrams showing the configuration of a high-frequency switch circuit according to another embodiment. The best form to carry out the investigation

 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention has the features of the above-described investigation, and is not limited to the embodiments described below in concrete form.

 Figure 1 is a configuration diagram showing one example of the present embodiment. In this embodiment, the input terminals 10 (corresponding to the connection ends) of the three high-frequency switch circuits are connected to form a three-branch circuit. It is. The signal transmitted on the main line M is branched to the branch lines B 1 B 2 and B 3. The main line M and each of the branch lines B1, B2, B3 are co-brane transmission lines. Of course, it may be composed of a microstrip type transmission line.

Each branch line B 1, B 2, B 3 is a PIN diode that constitutes a switching element between the high-frequency transmission line and the ground. The nodes D 1, D 2, and D 3 are arranged. The point where this PIN guide is arranged constitutes the output terminals 0 1, 2 and 0 3. These PIN diodes D 1, D 2, and D 3 are turned off (non-conductive) by applying a reverse noise pressure. , Forward noise voltage ¾ -α. ^ A) ¾ ^? 1 ε a 'sa' I a ¾ ¾ ½ ¾

 ° ¾ (m ^ w w) ¾

¾ times ^ ¾ ¾ times ¾ I, I. ? r w $ ¾

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 Η Ίίί ^ ίιϊί) ¾ ¾ ^ ¾ ^ 0 ΐ Ιϊ! Ί ^ γ «ε u! Ζ ^ ―

3 Be · ε ε ο »!? Ιγ— o ΐ ¾

γ つ 篛 ^ 乙 ^ ε a d — λ .. N I d ω τ i ¾

° 2 ¾ (m ^ JJ ¾) ^ ^ Otsu 《¾ 次 ^ 'egf ϋ

 ¾ ¾1 ¾ -e ^ © 2 ¾ if ¾ dM '° ΐ ¾ η if ¾

 ^ Ϋ q ¾;> ^ γ ^ W (ΰ Μ ¾ ¾ ίιρ -t ^ 0 c ζ ω 2 i Γ) 0 ΐ! ¾ί ¥ Υ, ¾ ¾ © ° 9r> s S u! Ζ

'ΐ u ί ζ 一; 1 Έ ^ Ζ 〇 〇' ΐ 0! ! ί V ¾-s Θ 'ΐ a ¾ ¾if ίΐιΐ / ¾ 篛 篛 ¾ ο ο τ 9τ

¾ u-γ, ^ m ^ be si 1 I α v , then sw ε α ( ζ α 'ΐ α ι--i ^ .. ^ Ν ι d ¾ ·

 °? R ¾ ¾ ¾, t !; i ^ ^ be ^ y ^ Φ m », w ¾ i ω ^ ¾ ¾ s co ^ m ^ ^ ^ m ^) 1} o [

(K ih¾?) ¾ ° S ¾ i Ik:? :: s tt / ¾:-Ba

y ω Wi ^, 4 base ^ 4 ^ - ^ - -rr ω j, wa H v J, a JA - ^ y .. ^ ω ^ m R d v i> ι

-^ HI d v i- m Λ-^ ^ Y-, x ° ¾ 丁

 2- Ί D ^ ¾ 4- nr rJHl IB Summary i \-N I 0 d i ^) ¾1 II ¾ © ^ ¾i ¾ ¾ ί¾ ¾ ¾ in ½) d — ^ ^ N I d r) fig? ) ^ ¾S ¾ M ¾i,

 i ^ $ ¾ | »χ · n / ¾ ¾ ¾s | ¾ ¾ ¾ M ¾ ffi ^ ^

 ω. ? : ¾ (^ W im) m ^-^ ^ ^ ^ ^-m rJ3 zz zz

S ^ 90 / 00df / X3d CZSZZ / IO OAV The length from the input terminal 10 to the arrangement position of each PIN diode D1, D2, D3 is the wavelength of the transmitted signal / 4. 4 It has transmission lines Gl, G2, G3. Then, in the question of the input terminal 10 and each person's / 4 transmission line G1, G2, G3, the capacitance elements C1, C2, C3 are arranged in a straight line in the line.揷 It has been inserted. As shown in FIG. 2, the storage elements C 1, C 2, and C 3 are provided with a high-frequency transmission line having the same width with an insulating film 100 interposed therebetween. It is formed by superimposing on the bottom.

 As shown in FIG. 2 (c), the elements C ′ 1, C 2, and C 3 are connected to the transmission line G 1 via a gap as shown in FIG. 2 (c). It may be formed by facing.

 Next, the operating principle of this high frequency switch circuit will be described. '

 First, the structure and the like of the PIN diodes D1, D2, and D3 are determined so that the on-resistance becomes as small as possible. The capacitances of the PIN diodes D1, D.2, and D3 in the off-state in this state are Cdl, Cd2, and Cd3. Since the three branch lines have the same configuration and operate in the same manner, one branch line B1 will be described below. .

Figure 3 is a Smithchart. The u-axis of the chart represents the real part of the voltage-reflection coefficient, and the V-axis represents the imaginary part of the voltage-reflection coefficient. The origin of the chart is the point where the voltage and reflection coefficient are zero. The maximum circle indicates the voltage 'reflection coefficient at which the resistance component of the normalized impedance is zero. The circle passing through the origin indicates the voltage and reflection coefficient that is the resistance component of the normalized impedance; 1. In addition, the broken line circle that passes through the original point is the conductance component of the regular admittance admittance. The voltage reflection coefficient which becomes 1 is shown. The output impedance, as viewed from the right (downstream side) from the output terminal 1 including the PIN diode D1, is the characteristic (line) impedance. Dance Z. Equal to Ray. Thus, this impedance P1 is eclectic at the origin on the Smithchart. Next, the impedance Z, which is seen right from the output terminal 01 including the PIN diode D 1, is Z. And 1 / j ω C d 1 in parallel impedance. Z, is expressed by the following equation.

 [Equation 1]

Ζ! = Ζ 0 / (l + jw C dl-Z 0 )

 -(1)

 Immediately, admittance 1 / Ζ, is 1 / Ζ. And j ω C d 1, the conductance component of the normalized admittance is 1 and there is no change. Only the sucrose component changes. Therefore, impedance Z, which is on the broken line circle that passes through the original point, is the only one that can be viewed as j ω C d 1 Z o It is located at a position rotated from the point.

Next, the e / 4 transmission line G1 rotates the phase of the voltage reflection coefficient at the output end by 7 °. Immediately, the voltage / reflection coefficient at the input end of the E / 4 transmission line G1 is obtained by multiplying the voltage / reflection coefficient at the output end by e XP (-j7Γ) 211. It becomes a value. Therefore, as shown in FIG. 3, the impedance Ζ 2, which is seen rightward from the input end of the λ / 4 transmission line G 1, has,, the origin symmetry. It is the point that has been moved to. This fin pin one da down the scan Z 2 is Ru through the original point regular I spoon-les-g is te down vinegar that Do a point on the circle of 1. In other words, the normalized resistance of the impedance Z 2 is 1, and the normalized reaction indicates inductive. become . Z 2 is given by the following equation. oo

Γ i-rv Ϊ-Γ ^

 (V 1 Γ <rv tsi V

 〇 ε ^ Μ Θ f ^ 0

 3 ε ^ DO 0 o = block ο II ^

 Θ Θ v II II

 e!.. [SI V

 Ri ¾¾ · Θ ri + tsi 8 _ + + + \

 ISJ

ε a + V V CO v ε

 Γζ 0 ε \ & ο f

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o

 Γζ Γ ^ vr o

 〇

 V 1 V V V II ε-n: V J No-

V 1 CM t i

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 Three

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0 n

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Έί Έί 回 Τ---------------LI------LI---LI LI LI-LI-LI

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 3 ¾ ^ ¾ [丫 © ΐ D ¾S ^ /

 ¾ m a- © 'ο τ? ^ ^ Ϊ́ J ¾ ® Be' j

 ° ¾ ¾ 蠱 蠱 蠱 5 Q Q ¥ 翊 翊 ΐ u! z be ^ — be

^ ¾τ ¾ m IO ¾ ¾ ¾ ¾ ^ ¾ ^ 0 T (?!? ¥ Y, ¥ 0?? ¾ ΐ 0 Γ / Be ^ — 3 Be 0?

 -Ά ω ° ¾?翊 hoof base ^

,: Be ^ 1; ^ Be ΐί ^ ¾ ¥ Υ ω τ 0 ¾ ¾1 ¾ ¾ '/ Ύ v ¾ fJil ° ¾ ¾ ΐ? ] ¾i ½ ¾ί Ξί mi! ¾ ¥ Υ

 u τ 2) ΐ ο ¾ ^ / γ ° ¾ ^ 09 τ-^ m ¾ si

I Ρ Ρ ¾ ¾ ¾ ^ i U · ¾ Γί 0 q. Ι-: f-ϊ 09 ε 园. ^ ΐ J, π be, one ^ be

T ¾ ^ T 0! ¾ Π Π a d ™ ^ ^. N I d X c.

> ° ¾ ¾ '! Μϋ Γ ¾ ^> $ burble) 1-^ d 0 Z γ. ^ Ή-\ ^ yin ^ «} n> ^ γ ¾ τ o li- οι 、, 《i ^ nm-ω ιι ^-^ ^ K id

 ° 2 ¾ c_)? r 蠹 allocation ¾ two)

¾ ー #, # 5 ^ ΐ 3 Si Si i ( {

 °? ¾

Ί Γϋ ^ Γ ¾ »¾ ¥ 1ί Υ ilif Q ¾ ^ l ¾ [;, 4 ^ ω i Y, ^> ¥ Ρ Ρ 0 Ban 5 ω r, '^ ^ 乙 ΐ α ι — .. Ν I d, ¾ ω-

° ¾r 0 · 2> ^ ^) n Z

 Y. Λ-Ά-?ョ ί ¾ ¾ ^ ¾ ¾ 0 Τ! ¾ C

LZ

8S ^ 90 / 00df / X3d / Ϊ0 OAV Inserting the element C 1 in a line in the transmission line in a straight line means that the input impedance Z in as viewed from the input end 10 to the side of the branch transmission line. Increase the value of 1 without lowering it. These five forces can lead to the improvement of the isolation characteristics.

 Incidentally, the input impedance Z in1 can be expressed by the following equation in the same manner as the equation (3) is derived.

 [Equation 5]

 Z i n 1 two Z. (Z o + r 1) / r 1 -j / ω C 1

 … (5) r 1 << Z. Therefore, the approximation of equation (5) is

 [Equation 6]

Z in 1 = Z ') 2 / r 1 — j / ω C 1

 -(6) Therefore, the absolute value of the input impedance Z in 1 can be made sufficiently large, and the voltage reflection at the input terminal 10 can be increased. The coefficient can be made sufficiently close to one.

FIG. 4 shows the characteristics of the high-frequency switch circuit according to the present embodiment. In the present embodiment, the off-state capacitance C d is compensated by reducing the on-resistance r 1 of the PIN diode from 5 Ω to 2.9 Ω. 1 20: Adds to the fF flag, 48 fF. The capacity element C 1 inserted in series in the transmission line is 36.1 fF. Note that the capacitance element described in the conventional example is 2 pF, and the PIN diode is impressed with [1] to cut off the noise voltage. It is a cut-off capacitor for use. The impedance of this 2 pF-capacitance fi element is Since the impedance is about 1 Ω at 7.5 GHz at the frequency line, this circuit is not suitable for direct connection.

The wave number has the characteristic of changing the impedance. As shown in Fig. 5, the capacitance element for direct current block extends over almost the entire length of the transmission from the input end to the PIN diode element. It is arranged. And One I, series Ri is Do not as an equal value that have the distribution in line path, even if the line path fin da down the scan Ru example given the shadow this and force s Oh Tsu to, e / 4 Legend There is no mechanism to change the impedance at the input end of the feed

 The insertion loss of the high-frequency switch circuit in this example is 0 • 7 dB, and the conventional circuit is 1.6 dB.

/ 2 or more. In addition, the isolation and the conventional circuit are 21.6 dB.

Since the circuit is 5-6 dB, about 20% improvement of the characteristics. Ρ 实 信 信 分. I can do it 2

 In the above example, the transmission line is bidirectional, and the receiver and transmitter are connected to each branch transmission line to switch between the transmitter and the transmitter. Becomes possible. In the example, distribution (branch). Explanation of switch circuit.

The number of branches is arbitrary. With one distribution, it is simply a directional switch circuit. In particular, if the distribution circuit is a switching circuit, it can switch between reception and transmission, and can be connected to the high-frequency circuit connected to the transmitter and the reception. By using the obtained high frequency switch branch circuit, it can be used for sending and receiving one antenna signal.

 Next, the second Zang example will be described. In the example, the λ 4 transmission line ≡

And the series contents When the diode is in the off state, it has achieved an impedance match at the input end. And against the will this second implementation example, the line path Lee emissions e e da down scan Z c, the length L (electrical angle 0 =? L = 2 TT L / / λ) Den transmission line path And the capacitor elements C 1 connected in parallel at both ends thereof, the equivalent circuit impedance Z 0 and the length λ / 4 (electrode This realizes a transmission line with an air angle of 7τ / 2). One of the capacitance elements C 1 corresponds to the capacitance of the PI diode in the off state. According to this equivalent circuit, the distance from the input end of the branching transmission line to the downstream side from the input end is that the PI diode is off. When it is in the position, the PI diode is turned on, as is the impedance seen from the diode on the downstream side. or 〖to time that, in the jar I was Ji above mentioned, Ru Oh than was also to jar by Z u 2 of / r 1 fin pin one da emissions Graphics and ing

 The following description is for one of the three-branch circuits shown in Fig. 1. One of the three-branch transmission lines Β1 is described below. The same applies to the other branch transmission lines B2 and B3.

Den transmission matrix X of the line path of the line road fin-bi over da down the scan Z c, electrical angle Θ is, Ru is table the current by the following equation. [] Represents the composition of each row, and expresses a row and column as a whole. X is a 2-by-2 system.

 [Equation 7]

 [C 0 S Θ j Z c s 1 η θ]

 [j s i η Θ / Z c c os θ]

 (7)

The transmission row Y of the parallel capacitance element C is expressed by the following equation. t

 o o c ε C 0〇 Z Θ = —

 Mi ^ Π ^ ^--. Θ CD 00

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V ¾, ¾ ¾? ¾. Λ Λ Γ K J. I-, CS1

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co i ^ r § 4- ¾ g | ¾ i- l ¥ ¥ ¾ ω1: § νΐ η -¾ Γ ) g

 ω ^ ^ co-^ κ I d ¾,? d — ^ A Ν

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 (6 ΐ), '$ ¥-· (8 ΐ)) γ ©

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0 zc I. Α /. A I

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, W \ d —. NI d ii ^ be \) ? ' N Z

(ε s)… 0 ζ

<(, α + ζ 0 ζ, ο) / (. a + ? - 0 ζ. ν) = u ι ζ ex

 [B, s «]

 ¾ [JE

 ° ¾ W ¾ ¥) (ΐ Z) (0 Z)

 ^ ¾ ^-, ¥: :) z, A — 3 y y ω '! A, ν ¾ ^ ■ ¾- © οι

Η Έ ω m ^ ^ ^ y Λ I d, X

 {ζ ζ)-■ ΐ-=

(r) d χ 9 = (α + ο 0 ζ + 0 ζ / a + ν) / ζ = ζ τ s

 【S s】

#i-(6ΐ), (ん τ) ^ ¾ ^ Φΐ ¾ ¾-) ι ¾ (mmΈ Μ ¾ ^ Υ) 1 1 S, 卩 — — (^ firewood <) ζ 1 S ^ ¾-) ( Αι ^ ¾ つ. Ϊ) Γι ¾ S ί! 4- α = ζ 2

8 90 / 00df / e :) d CZSli / TO ΟΛ \ This and force you decrease s available-and ing. Also, as a price to increase the capacitance when the PIN diode is turned off, the resistance value when the PIN diode is on can be reduced. As a result, the input impedance at the input end of the high frequency switch circuit is greater than that of a conventional circuit with a higher on-resistance. However, because it can be made large enough, the isolation characteristics are also improved. It should be noted that, in addition to the characteristic impedance, Z β is also a good impedance when looking at the upstream side from the input end.

 Next, three embodiments will be described. In the second embodiment, the length satisfying the expression (18), the characteristic impedance satisfying the expression (19), and the capacity at the input end of the transmission line of the characteristic impedance are satisfied. By arranging the element C between the line and the ground, the impedance at the input end is matched. In the third embodiment, instead of this element S, another transmission line is connected. Hereinafter, one branch transmission line Β1 will be described, but the other branch transmission lines can be similarly established.

The heat transmission line path - Ni Let 's are shown in FIG. 7, the length L a, electrical angle theta a, a first Transmission line path H a line path fin e e da down scan Z a, length L b, electrical angle theta a, it shall be the longitudinal connection connecting the second transmission line path H h line path Lee emissions e e da down scan Z b.

Den transmission matrix X a of the first Transmission line path H a is Ru are representable by the formula (7) or al the following equation.

 [Equation 25]

[c os Θ a j Z a sin θ a ]

[js in ia. / Z a cos Θ a]

 - ( twenty five )

However, 0 a = 27 L a /

Similarly, heat transmission matrix X b of the second Transmission line path H b is衷by: It is done.

 [Equation 26]

[c os Θ h j Z sin Θ b ]

[jsin 0 b / Z cos Θ h ]

 "'(2 6)

Where 6 b = 27 2 L h / λ

 Further, the transmission row Y of the PIN diode in the off state is obtained by the following equation from equation (8).

 [Equation 2 7]

 [ Ten ]

 [} ω C 1 J

- (2 7) Tsu good, Den transmission matrix W of the circuit of FIG. 7, Ru Oh in X a X b Y.

 If each component of the transmission matrix W is represented as W ij, each component can be represented by the following equation.

 [Equation 28]

2 cos 6> a cos Θ |,-Z a sin Θ a s in Θ b / Z b -ω C (Z b cos Θ a s in Θ h + Z a s in Θ a cos Θ h )

 -(2 8)

 [Equation 2 9]

W! 2 = j Z b cos Θ a s in Θ b + j Z a s.in Θ a cos Θ h- (2 9)

 [Equation 30]

W 2! = Js in Θ a cos Θ b / Z a + jcos Θ a s in Θ b / Z h

+ j ω C (-Z b s in Θ a sin Θ h / Z + co ^ べ all ^ — 3 Έ ¾ m 土 soil ¾ ^ sr.? [Ί— γ i ¾u ® m

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8S ^ 90 / 00df / X3d ZVili OAV Sex impedance Z. You can do it ^

 Also, when the PIN diode has an on resistance of r and the impedance is on, the impedance Z i „seen from the input end to the downstream side is as follows. It is represented by an expression.

 [Equation 3 7],

Z i n = = Z 0 2 /

 -(37) Therefore, since the on-resistance r can be reduced, the characteristics of the isolation can be improved.

 Incidentally, Z. Is an impedance that looks upstream from the input end. It is a good quality even if it is a characteristic impedance.

 Other implementations are described below.

 In the configuration of the first embodiment shown in FIG. 1, two branch transmission lines B 1 may be configured as shown in FIG. A λ / 4 transmission line and a series capacitance element C may be provided on both sides of the PIN diode D. In the first embodiment, the capacity element C is input to the input / 4 transmission line with respect to the capacity value / 2 in the off state of the PI diode. The impedance is adjusted so that the impedance looking right from the end has the characteristic (track) impedance-0. However, in this case, the route impedance can be any value for the following reasons:

The equivalent circuit in the PIN diode power s off state in Fig. 8 (a) is as shown in Fig. 8 (b). Parallel capacity C. The transmission cascade W of the cascaded circuit A composed of a person / 4 transmission line and a series capacity C is:. , W 1 2 = jZ, W 2 1 2 j / Z, W 2 2 = 0. Therefore, the transmission cascade W of the cascade circuit of the cascade circuit A and the cascade circuit B is connected to the line impedance Z. Seki engaged phrase, W ii = -! 1, W 2 = 0, W 2 〖Ni 0, W 2 2 = _ 1 and that Do not.

Therefore, the voltage and reflection coefficients at terminals 22 and 20 are equal. Assuming that the impedance from terminal 20 is right (load side) and the impedance is Z, the impedance from terminal 22 is right da down vinegar Z L and ing. That is, if two transmission lines have the same line impedance, this is true irrespective of their values. Therefore, if the impedance looking to the left (upstream side) of the terminal 22 is ZL, the terminal 22 can be connected to the terminal 22. Impedance matching is realized. Also, when the PIN diode D is in the ON state, as described above, the impedance looking right from the terminal 22 is Z 2 / r, and the smaller the on-resistance r, the larger the value.

 By using this circuit, a circuit as shown in FIG. 9 (b) can be constructed. Immediately, the high frequency switch circuit 50 is configured as described above, and the antennas 31, 32, and 33 are connected to the respective branch lines 21, 22, and 23. Is connected. This impedance should be 75 Ω. All you have to do is insert the impedance conversion circuit 40 of characteristic impedance 50-ohm and 75-ohm into the main line M. In this case, the high frequency switch circuit 50 is left as it is, and the impedance conversion circuit 40 is simply changed. It is possible to arbitrarily change the impedance of the teners 31, 32 and 33.

 On the other hand, when the above circuit is provided on one side, as shown in FIG. 9 (a), each branch circuit is provided with an in-between circuit. A dance conversion circuit is required.

Further, as shown in FIG. 10, the impedance of the second embodiment is It is possible to set up a one-piece matching circuit on both sides of the PIN diode. In this case, the capacitance value 2C is set to the off-state capacitance value of the PIN diode.

 ": Regarding the transmission matrix described in the above description, this embodiment is naturally established. In this case as well, if the line impedances of the two regulated transmission lines on both sides are equal, then the line impedance is equal. Regardless of the above, the above holds true.

 Similarly, as shown in FIG. 11, the impedance matching circuit of the third embodiment may be provided on both sides of the PIN diode. Also in this case, the capacitance value 2C is set to the capacitance value when the PIN diode is turned off.

Regarding the transmission matrix described above, this embodiment is naturally established. In this case as well, if the equalized and balanced roads on the two regulated transmission lines on both sides are equal, the lines will be equal. Seki engaged phrase in fin pin one da down vinegar, you this and the force s formation standing above Symbol.

In the case where the impedance matching circuit of the third embodiment is provided on both sides of the PIN diode, three paths as shown in Fig. 12 (a) are provided. The insertion loss, reflection loss, and isolation in the case of the selection circuit shown in Fig. 12 (b) are shown in Fig. 12 (b). Figure 12 (c) shows the results of comparing the characteristics of the three selected routes using the roads with those characteristics. In both cases, the on-resistance of the PIN diode is 3.2 Ω and the off-capacitance is 40 fF. In this embodiment, the high frequency switch circuit is about 2/3 of 0.9 dB in persimmon insertion loss and 1.5 dB in the conventional circuit. You can see that it has dropped. The reflection loss is 25 dB, which is 8 dB in the conventional circuit. It can be seen that it is one third lower than that of. In addition, it can be seen that the characteristics of the aspiration are the same as those of the 25d and B in this embodiment and the conventional example. .

As shown in Fig. 13, it is composed of an impedance matching circuit of the third embodiment and a switching element such as a PIN diode. Two high-frequency switch circuits V1 and V2 according to the present invention of the route selection are provided, and transmissions having different lengths for each route are provided between the circuits. line path (1, 1 2, 1 3;) the set only with, yet good to the phase shifter and configuration. In this case, the amount of phase shift can be changed by selecting a route.

 All of the embodiments described above are capable of transmitting signals in both directions. Therefore, in the above description, the connection point is described as an input end, but if a signal is transmitted in the reverse direction, the connection end will be a high frequency switch. H. Output end of circuit

 In all the examples, the number of branches and the number of selections are arbitrary.

 Next, other examples will be described.

As shown in Fig.14, it may be configured. Only branching path B1 will be described. This embodiment is different from the first embodiment in that the transmission line G11, which is the third regulated transmission line, and the PIN die, which is a switching element, are used. It is characterized by the addition of mode D 11 1. The equivalent circuit in Figure 14 is shown in Figure 15. Immediately, the capacitance of the off state of the PIN diode D1 is C dl + C, and the capacitance of the off state of the PIN diode D11 is C. . In this way, the capacitance of the off state of the PIN diode D1 can be considered by decomposing it into Cd1 and C. The first example is applied to p 1-1, and the second example is applied to p 2-p 3. Immediately, the line of transmission line G1 is a person. / ooofcvuld OAV-

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8S ^ 90 / 00df / X3d / Ϊ0 OAV Next, other examples are explained.

This embodiment is different from the third embodiment in that a transmission line G61, which is a third regulated transmission line, and a switch, as shown in FIG. The feature is that PIN diode D11, which is a silicon element, is further applied. The equivalent circuit in Figure 20 is shown in Figure 21. Immediately, the off-state capacitance of the PIN diode D1 is C a + Cb, and the off-state capacitance of the PIN diode D11 is Cb. And In this way, the capacitance in the off state of the PIN diode D1 can be considered by decomposing the capacitance into Ca and Cb. For the p 1 -p 1 question, the third embodiment is applied, and for the p 2 -p 3, the second embodiment is applied. Immediate Chi, first Transmission line path H a, and a line passage Lee emissions e e da down scan of the second Transmission line path H b - length, (2 8) - (3 6) have contact to the formula , C2Ca. Regarding the transmission line G61, the length is equal to that of the second embodiment. Therefore, according to (18) and (19), the length and the line impedance are determined. Ask for Dance. With this configuration, when the PIN diodes D1 and D11 are both in the off state, the impedance at the right of the p2 point force is seen. scan is Ri Do the characteristic Lee emissions e e da down scan ZQ, fin peak one saw p 1 point to right da emission scan also characteristics fin pin one da down scan Z n and ing. Ni will Yo this, in two of the PIN dialog Wow de Ru use physicians to this, Ru can in this and force 5 Ru is above direction Ri by the A Lee Seo-les-motion. Immediate blood. Trees and PIN dialog Wow de D 1 1 force s on-state, a point P 2 forceゝLuo fin pin over da down vinegar saw the right is Ri Do not rather than can-die because very, in-out pIN dialog Wow de D 1 1 power 5 tail down state capital, in and this power that is leakage under flow direction is that will be deter the fin pin over da down the scan has come large In other words, the impedance looking right from the point p1 is larger than that consisting of only the PIN diode D1.

In addition, as shown in FIG. 22, PIN diodes D 1 and D 1 1ί ¾ ΐ i¾ Μ ¾ Φ ε d © g ι [g |, [la ° ¾- s r

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Sl790 / 00df / X3d CZ £ ZZ / 10 OAV An example fin pin one da down the scan integer if times path of ∎ You can in this and force 5 Installation only that. However, the P 1N diode D 11 is decomposed into the capacitance iS C and the capacitance 1 C (12. From the symmetry, the point p 3 in FIG. The capacitance of the impedance matching circuit provided on the right side is C2. Similarly, as shown in Fig. 24, the point of Fig. 16 is obtained. It is possible to add the impedance matching circuit of the first embodiment to the right side of p3, as can be understood from Fig. 24. In addition, it is also possible to have a completely symmetric circuit configuration.

 Also, as shown in Fig. 25, the impedance matching circuit of the second embodiment should be provided on the right side of point p3 in Fig. 18. Is possible. However, the PίN diode D 11 is decomposed into a capacity Cb and a capacity Cc. The result is as shown in Figure 25. In this case, the static capacity of the impedance-matched circuit to be followed II: 1 is Cc. Similarly, as shown in Fig. 26, the impedance matching circuit of the second embodiment is added to the right side of point p3 in Fig. 19. And become possible. As can be seen from Figure 26, it is possible to have a completely symmetrical circuit configuration.

 Also, as shown in Fig. 27, the impedance matching circuit of the third embodiment can be installed on the right side of point p3 in Fig. 20. And are possible. Immediately, it looks like Figure 27. In this case, the impedance matching circuit to be tracked will not be equal to the original impedance matching circuit. Similarly, as shown in Fig. 28, the impedance matching circuit of the third embodiment is added to the right side of point p3 in Fig. 21. And become possible. As can be understood from Fig. 28, it is possible to have a completely symmetrical circuit configuration.

Next, other examples will be described. The circuit shown in FIG. 8 using the two impedance matching circuits of the first embodiment is connected to the impedance matching circuit shown in FIG. The road may be asymmetric. That is, in this embodiment, as shown in FIG. 29 (a), the series capacitance C and the characteristic impedance Z are obtained. Fin pin over da down the scan integer if times path and the series capacitance C and the characteristic fin pin one da down the scan Z t> of e / 4 Transmission line path of Hisashi / Ru 4 Transmission lines Luke et al formed It is composed of an impedance matching circuit made up of the impedance matching circuit. The equivalent circuit in Fig. 2.9 (a) is shown in Fig. 29 (b). The off-state capacitance of PIN diode D is divided into two parallel capacitances C a and C b. Then, the capacitance C can be obtained by setting C d 1 = C a on the right side of (4). In addition, the electrostatic capacitance C is have you on the right-hand side of (4), C d 1 = C b and your Les Te,, ∎ we can at Ru asked Me this and force s. By configuring in this way .. As explained in the first embodiment, when the PIN diode D is in the off state, the point p The impedance from right to point 2 is the characteristic impedance, and the impedance to the right from point P1 is also the characteristic impedance. It is a pedance.

In addition, the two impedance matching circuits of the second embodiment are used in the circuit shown in Fig. 10 using these impedance matching circuits. The matching circuit may be asymmetric. That is, as shown in FIG. 30 (a), this embodiment is a transmission line having a parallel capacity C a, characteristic impedance Z a, and length La. The impedance matching circuit and the parallel capacitance Cb and the characteristic impedance Zb and the length Lb of the transmission line It is composed of an impedance circuit and an integrated circuit. The equivalent circuit of FIG. 30 (a) is that of FIG. 30 (b). The off-state capacitance of PIN diode D is divided into two parallel capacitances C a and C b. So Therefore, the characteristic impedance Z a and the length La are expressed by the equations (19) and (18) as C = C a, respectively. ∎ You can in order Ru this and force s. Similarly, the characteristic impedance Zb and the length Lb are expressed as C2Cb in the expressions (19) and (18), respectively. You can ask for it. With this configuration, as explained in the second embodiment, when the PIN diode D is in the off state, the point p · The impedance looking right from 2 is the characteristic impedance, and the impedance looking right from point p1 is also the characteristic impedance. It is a pedance.

Further, in the circuit shown in FIG. 11 using two impedance matching circuits of the third embodiment, the impedance matching circuits are used. The circuit may be asymmetric. In other words, as shown in FIG. 31 (a), this embodiment has a characteristic impedance of Z,, a transmission line of length Lia and a characteristic impedance. e e da down scan Z i b, a fin pin one da down scan integer if circuitry Ru series connection mosquito et formed with heat transmission line path Shi length t b, characteristic Lee emissions e e da down scan Z 2 b, the length L 2 b of the heat transmission line path and the characteristics fin pin one da down scan Z 2 a, series connected circuits or Naru Luo of the heat transmission line path length L 2 a It is composed of a rudimentary matching circuit. The equivalent circuit of Fig. 31 (a) is that of Fig. 31 (b). The off-state capacitance of PIN diode D is divided into two parallel capacitances C a and C b. Its to the line path Lee emissions e e da down scan Z i a, Z, b, a length L, a, L, b is its being its being, (2 8) - have you to (3 6) And obtain C 2 C a. Similarly, the line path Lee emissions e e da down scan Z 2 a, Z 2 b, the length L 2 a, L 2 b is its being its being, (2 8) - have you to (3 6) Then, C = C 1) is obtained. With this configuration, the circuit of the third embodiment is the same as that of the cascade connection.

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09

Sl790 / 00df / X3d CZSZZ / TO OAV

Claims

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 ^ m ^ ~ Ά y y \ ^ D ¾ ¾ ω ¾ times ^ y ^ Μ pi pi mi ¾ιι G9 ϋ ^ 士..
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8St790 / 00df / X3d Jii The high frequency switch circuit described in Paragraph 1 of the scope of the claim, characterized by the fact that it consists of a thread.
 4. The capacitance value C of the capacitance element is defined as C d when the switching element is in the off state and the capacitance S value when the element is viewed is Cd. C = l / Special 3rd time,
2 · C d • Ζ 2 ), where Z is / / 4
This is the impedance of the road, which is the impedance of the road, looking at the opposite side of the switching element from the connection end. ω is a high frequency 'wave switch circuit described in paragraph 3 of the claim EI, which is characterized in that it is an angular frequency.
 5. The impedance matching circuit described above is located on one side of the g-position of the switching element, and is used for transmitting the transmission signal. A first λ / 4 transmission line having a length of wavelength / 4;
The arrangement of the mad switching element on the other side with respect to the arrangement position II
Ilk and a second person with a length of 4/4 of the transmitted signal wave length
4 Insert the transmission line and the other end of the first λ / 4 transmission line, to which the above-mentioned switching cable is connected at one end, in a straight line to the line. The first element S is connected to the other end of the second λ / 4 transmission line, and the switching element is connected to the other end of the second λ / 4 transmission line. A high frequency switch circuit as described in Paragraph 2 of the claim, which is characterized by the fact that it consists of a second capacitance element inserted in series.
6. The capacitance value C of the first capacitance element described above is the value at the time of the above-mentioned switch and so-called silicon element state; When the value is C d, C = 1 /, Z 2 · C d / 2), where Z is the flywheel impedance of the quadrant and ω is the angle. The scope of the claim to be a frequency ÷ r ρ-. |
 M wave switch
7 ¾ | J ιϊΰ The impedance matching circuit adjusts the reflection coefficient. For the sake of equality with the adjusted transmission line and the capacitance value of the above-mentioned switching element in the off state, the above-mentioned switching element has one end. A subcontractor which is characterized in that it consists of a capacity element disposed between the other end of the regulated transmission line to which the element is connected and the ground. Iffl The high frequency switch circuit described in paragraph 1 of the iffl section.
8. The length L of the previous SL adjustment Transmission line path, L = human cos "1 (Z ω C, 1 2 7Γ, linear path Lee down pin one da down scan Z is, Z c = Z / (1 -(Ζω C) 2 ) 12 , where Z is the impedance when the opposite end is seen with respect to the connection end, and C is the former The scope of the claim, which is characterized by the fact that ω is an angular frequency, the reciprocal value of the off state of the switching element, and the high frequency wave described in Section 7. Switch circuit.
 9. The impedance matching circuit described above is placed on one side with respect to the arrangement position of the above-mentioned switching element. The first adjusting transmission line for adjusting the number and the ffi position of the front IB switching element are arranged on the other side with respect to the ffi position, and the reflection coefficient is adjusted. The second adjusted transmission line to be adjusted and the other end and front of the first adjusted transmission line having the switching element connected to one end. The second regulated transmission line, in which the first capacitance element disposed between the grounds and the switching element connected to one end thereof are connected to the first capacitance element. And a second capacitance element disposed between the other end of the second capacitance element and the ground, and the first capacitance element and the second capacitance element described above. The capacity value is The capacitance value of the off state of the itching element Ζ 2 ¾ The featured request 高 The high frequency switch circuit described in paragraph 4 (2) .
10. M S3 The goodness L of the first and the second adjusted transmission line described above is L = λ cos- 1 (Z ω C) / 27 Γ, respectively. And z is the impedance of each tuned transmission line. = V 7 ,, ? , Z, "Z-— 3 v
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Is, L = people / [2 7Γ (2 - ω C Ζ) 1/2], provided, however, C is the capacitance value at the time of the scan I pitch in g iodine Coll is off state, Ζ before The line that is the impedance seen from the connection end on the opposite side
High frequency switch circuit described in Paragraph 11 of the range of characteristic packing
5 5 J 1 © © © © © 5 © © © 5 © 5 © © © © © © © © © © © © © iodine W t of Den transmission matrix W! a,, W 1 2 = B,, W 2. = CW 2 = D, and that the can be, the length of the structure path before Symbol adjust transmission line path And the line impedance are set so as to satisfy A, 0 B C, C = j / Ζ.D 0, and the second adjusted transmission line described above is set. When the switching element is in the off state, the element of the transmission cascade W of the cascade circuit between the capacitance element when the switching element is in the off state and the capacitance composed of / 2 is W> i = When A 2 , W, 2 B 2 , w 2 , = C 2 , W 2 2 = D 2 , the line impedance of each line forming the above-mentioned adjusted transmission line is m. The characteristic is that the length is set so as to satisfy A 2 = 0, B a = jZ, C 2 = j / Z, and D 2 = 0. A range of claims! 31 High-frequency switch circuit described in paragraph 12.
1 6. The IJU iicl 1 and the second regulated transmission line are both composed of two lines of equal length, and the line impedance Z. a Z b is, Z a = Z (1 - ω 〇 Ζ) 1/2 Z b = Ζ / (1 - ω CZ) 1/2 length L, L = λ / [2 7Γ (2 - ω C Ζ)
1/2]
However, C is characterized in that the capacitance value when the switching element is in the off state / 2Z is an arbitrary impedance. Scope of the claim The high frequency switch circuit described in paragraph 12.
17. The switching element described above is connected to the third adjusted transmission line and the first adjusted transmission line on both sides of the third adjusted transmission line. Claim 1 characterized by being composed of a 7Γ type circuit consisting of a switching element and a second switching element and a force. The high frequency switch circuit as described in any one of claim 3, claim 5, claim 11, and claim 12.
18. The third adjusted transmission line is defined as Ca + Cb, which is the capacitance of the first switching element in the off state of the first switching element. When the ^ capacitance when the second switching element is in the off state is represented by Cb, the capacitance Cb, the above-mentioned third regulated transmission line, The input and output ends of a symmetrical 7-inch circuit composed of an electrostatic capacitance Cb should be placed at the input and output ends, and the impedance should be matched as described in the third item above. A high frequency switch circuit as set forth in claim 17 characterized in that the length of the conditioned transmission line is determined. The capacitance when the first switching element is in the off state is Ca + Cb, and the off-state of the second switching element is 19. Assuming that the capacitance at this time is C b, the symmetry is composed of the capacitance C b, the third adjusted transmission line described above, and the capacitance C b. When the input and output terminals of the circuit are impedance-matched at the output end, and when the switching element is in the on-state, The infinity of seeing the second switching element ら from the connection point of the first switching element will be almost infinite. Thus, at the time of the request, which is characterized by the fact that the line impedance and the length of the third adjusted transmission line are determined, as described above. High frequency switch circuit as noted.
When the capacitance of the first switching element and the capacitance of the second switching element in the off state are both CI). , Capacitance SCb, the third adjustment transmission line described above, capacitance SLC The third adjusted transmission line described above is designed so that impedance is matched at the input end and output end of the symmetric 7Γ type circuit formed by m in b. A high frequency switch circuit as described in claim 17 characterized in that the length of the path is determined.
When the capacitance of the first switching element and the capacitance of the second switching element in the off state are denoted by Cb. At the input end and the output end of the symmetrical π path composed of the capacitance transmission line C b, the above-mentioned third regulated transmission line, and the capacitance C b. When the impedance is matched and the second switching element is in the on state, the second switching element is connected to the second switching element from the connection point of the first switching element. The line impedance and the length of the third adjusted transmission line are determined so that the impedance seen from the tuning element side becomes substantially infinite. The high frequency switch circuit 22 according to claim 17, wherein the length L of the third regulated transmission line is L = A th M n 1. (2 / C b Z) / 2 Γ, , Z is the characteristic impedance, and ω is the angular frequency. The high frequency wave described in claim 18 or claim 20 is characterized by the fact that ω is the angular frequency. The circuit.
23. The length L of the third adjusted transmission line is L 2 λ cos _ 1 (ΖωCb) / 27Γ, and the line impedance Z is Z c = Z / (1 - ( Z ω C b) 2) 1/2 Ah Ru in, provided, however, Z is connected end or found before SL Lee down the volume location C b before Symbol symmetric 7Γ type circuits The impedance (CI) as viewed from the side of the impedance matching circuit is the capacitance value of the off-state of the second switching element, and ω is the angular circumference. A high frequency switch circuit as described in claim '19 or claim 21 which is characterized by being a wavenumber.
24. For the static capacitance SCa, the circuit constant of the impedance matching circuit on the connection end side has been determined. The high frequency described in claim 18 or claim 19, which features Wave switch circuit.
 25. Hi) .id If the capacitance of the switching element is C a + C b, "Hl ^ ¾ · Jffi C a The circuit constant of the impedance matching circuit is determined, and the circuit of the other impedance matching circuit described above with respect to the static capacitance Cb is determined. A high frequency switch 0 path as described in claim 2 which features that the constant is determined.
 26. The impedance matching circuit is arranged on one side of the arrangement and position of the fi3 switching element, and the transmission signal i Disposed on the other side with respect to the first feed / 4 transmission line having the O wave length / 4 length and the switching element placement position described above. A second λ / 4 transmission line having a length of the transmission signal wave length / 4 is connected to the switching element at one end. At the other end of the first transmission line Φ, the other end is inserted in line with the line.
15 At the other end of the second feed / 4 transmission line, the first capacitance element 'and the switching element at one end are connected to the switching element at the other end. Consisting of a second capacitance element inserted in a line in a straight line on the line, the capacitance value C, of the first capacitance element is C! = 1 / (ω 2 · Ζ 2 · C a), and the capacity S value C 2 of the capacity element described in W'j No. 2 is C 2 =
20 1 / (ω 2 · Z 2 · C b), where Ζ is the impedance of the flyback / 4 transmission line, and ω is the angular frequency A high-frequency switch circuit as described in claim 25, characterized in that: 27. The impedance matching circuit is arranged on one side with respect to the πυ ^ self-switching element's l-position, and the reflection number
The first adjustment transmission line for adjusting 25 and the arrangement of the above-mentioned switching element are arranged in the other direction with respect to the arrangement position of the switching element, and the reflection coefficient is adjusted.と Adjusting transmission line 2 and the other end of the first adjusting transmission line with the switching element connected to one end. Record The first capacity element provided in the ground IS! And the second adjusted transmission line in which the above-mentioned switching element is connected to one end. A second capacitance element disposed between the other end of the road and the ground, and the capacitance value of the first capacitance ift element is Ca and the capacitance value of the first capacitance element is The second high frequency switch circuit described in claim 25, characterized in that the JS value of the second capacitor element is Cb.
28. The length La of the first regulated transmission line is La = A cos- 1 (ΖωC a) / 27 2, and the line impedance Z a is , Z a = Z / (- ! (Z ω C a) 2) 1/2 Ah Ri in, before Symbol length L b of the second adjustment transmission line paths, L b two Hisashi cos "1 (Z ω C b) / 2 ττ, and the path impedance Ζ b is Z b 2 Z / (J-(Ζ ωC a) 2 )
1 z 2, where z is the impedance when looking on the opposite side to the tangent end, and ω is the angular frequency. The high frequency switch circuit described in Claim 27.
2 9. The impedance matching circuit described above is located on one side of the switching element for the positioning and concealment of the switching element, and the reflection coefficient is adjusted. The first adjustment transmission line consisting of a series connection of two equal length lines for adjustment, and the arrangement of the switching elements 11 It is located on the other side of the concealment and consists of a series connection consisting of two lines of equal length for adjusting the reflection coefficient. , The impedance of the first adjustment circuit, Z, a , Z, b is Z, a = Z ( 1 - ω C a Z) 1 /2, Z, b = Z / (1 - ω C a Z) 1 2, length L i is, L, = λ / 12 7Γ (2 - ω C a Z) 1 2 ], the circuit impedance of the second adjustment circuit, Z 2a , Z 2b , Z 2a =
Z (1 - ω C b Z ) 1/2, Z 2 b = Z / (] - ω C b Z) 1 z 2, the length L 2 is, L 2 two / 12 7Γ (2 - ω C b Z) 1/2 I, and however, Z is Ah in fin e e da down scan viewed before Symbol connecting end or al Symbol opposition side V
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PCT/JP2000/006458 1999-09-21 2000-09-20 High-frequency switch circuit WO2001022523A1 (en)

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JP11/266537 1999-09-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102057583A (en) * 2008-06-06 2011-05-11 双信电机株式会社 High-frequency switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390394B2 (en) 2007-12-19 2013-03-05 Soshin Electric Co., Ltd. High frequency switch
JP5261119B2 (en) 2008-09-30 2013-08-14 双信電機株式会社 High frequency switch

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Publication number Priority date Publication date Assignee Title
JPS63161701A (en) * 1986-12-25 1988-07-05 Nippon Telegr & Teleph Corp <Ntt> Microwave switch
JPH02108301A (en) * 1988-10-17 1990-04-20 Mitsubishi Electric Corp Lambda/4 type switching circuit
JPH02189001A (en) * 1989-01-18 1990-07-25 Nec Corp Pin diode switch
JPH10284901A (en) * 1997-04-07 1998-10-23 Mitsubishi Electric Corp High frequency switch and transmission/reception changeover device
JPH10335901A (en) * 1997-06-04 1998-12-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor switch
JP2000058767A (en) * 1998-08-12 2000-02-25 Nec Corp Semiconductor switch and switch circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63161701A (en) * 1986-12-25 1988-07-05 Nippon Telegr & Teleph Corp <Ntt> Microwave switch
JPH02108301A (en) * 1988-10-17 1990-04-20 Mitsubishi Electric Corp Lambda/4 type switching circuit
JPH02189001A (en) * 1989-01-18 1990-07-25 Nec Corp Pin diode switch
JPH10284901A (en) * 1997-04-07 1998-10-23 Mitsubishi Electric Corp High frequency switch and transmission/reception changeover device
JPH10335901A (en) * 1997-06-04 1998-12-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor switch
JP2000058767A (en) * 1998-08-12 2000-02-25 Nec Corp Semiconductor switch and switch circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102057583A (en) * 2008-06-06 2011-05-11 双信电机株式会社 High-frequency switch
CN102057583B (en) * 2008-06-06 2014-07-02 双信电机株式会社 High-frequency switch

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