WO2001003879A1 - Friction fit target assembly - Google Patents

Friction fit target assembly Download PDF

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Publication number
WO2001003879A1
WO2001003879A1 PCT/US2000/018968 US0018968W WO0103879A1 WO 2001003879 A1 WO2001003879 A1 WO 2001003879A1 US 0018968 W US0018968 W US 0018968W WO 0103879 A1 WO0103879 A1 WO 0103879A1
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WO
WIPO (PCT)
Prior art keywords
target
recited
backing plate
assembly
mating
Prior art date
Application number
PCT/US2000/018968
Other languages
French (fr)
Inventor
Eugene Y. Ivanov
Harry W. Conard
Original Assignee
Tosoh Smd, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Smd, Inc. filed Critical Tosoh Smd, Inc.
Priority to US10/030,996 priority Critical patent/US6725522B1/en
Priority to JP2001509338A priority patent/JP2003504513A/en
Publication of WO2001003879A1 publication Critical patent/WO2001003879A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P11/00Connecting or disconnecting metal parts or objects by metal-working techniques not otherwise provided for 
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • the present application pertains to a low temperature sputter target backing plate joining technique and to assemblies made thereby.
  • a target and backing plate are provided wherein the harder material of the two is machined or otherwise formed so as to have a plurality of ridges or other salient surface portions thereof. These ridges or salient portions are formed along the interior surface of the target or backing plate. The ridged surface is then placed alongside the mating surface of the other member of the assembly along the target/backing plate interface wherein joining will occur.
  • the peripheral portion of the interfacial surface assembly, surrounding the ridges or salient portions, is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum.
  • the assembly is then pressed at a low temperature, preferably at room temperature.
  • the projections or ridges formed along either the target or backing plate bend upon penetration into the mating metal surface along the target/backing plate interface and form an interlocking grip over the softer metal on the opposing mating surface.
  • a target and backing plate wherein both materials are similar in mechanical properties and both are machined or otherwise formed so as to have a plurality of ridges and grooves or other salient surface portions thereof. These ridges or salient portion are formed along the interior surface of the target or backing plate.
  • the ridged surface is then placed alongside the mating surface (having appropriately positioned mating members) of the other member of the assembly along the target/backing plate interface wherein joining will occur.
  • the peripheral portion of the interfacial surface assembly is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum.
  • the assembly is then pressed at a low temperature, preferably at room temperature.
  • the projections or ridges formed along either the target or backing plate penetrate into the mating members along the target/backing plate interface. The projections penetrate into the grooves on the opposing mating surface.
  • FIG. 1 is a schematic cross sectional view of a target and backing plate assembly showing the friction fit joining mechanisms in the form of cylindrical male projections ready for insertion into cylindrical bores;
  • Fig. 2 is a schematic cross section showing another embodiment of the joining members having square male projections in one member and correspondingly square shaped recesses formed in the other member;
  • Fig. 3 is a schematic cross sectional view of the assembly shown in
  • Fig. 4 is a schematic cross sectional view of the assembly shown in Fig. 2 in the mating or joined position;
  • Fig. 5 is a partially exploded perspective view of the assembly of Fig. 1 before bonding
  • Fig. 6 is a partially exploded perspective view of the assembly of Fig. 2 before bonding.
  • Fig. 1 there is shown a target backing plate assembly.
  • the assembly comprises a target 2 having a top side 23 carrying metal or metal alloy that, in accordance with conventional sputtering methods, will be ejected from the target via ionic bombardment and will travel to and coat the desired substrate.
  • a backing plate 4 is provided under the target, with the bottom side 11 of the target adapted to mate with the top side 13 of the backing plate to define an interfacial surface area 28.
  • a heat exchange fluid such as water is circulated adjacent the bottom side 21 of the backing plate so as to cool the assembly during its sputtering operation.
  • a plurality of cylindrical male projections 8 are machined into the surface 11.
  • the surface 13 is provided with cylindrical female bore members 9 of smaller diameter than the diameter of the male projections 8.
  • a filler material 6 such as an Al 4%Si alloy or other suitable alloy, in the form of a ring or the like, adjacent the peripheral border 25 of the assembly between the target and backing plate.
  • the filler material 6 enhances bonding of the target to the backing plate as shall be explained hereinafter.
  • the assembly is first bonded around the peripheral border 25.
  • This initial bonding along the peripheral border of the assembly may be achieved by conventional means such as by E-beam welding under vacuum conditions, TIG welding, and friction welding and the like.
  • the bonding of the peripheral boundaries of the target and backing plate is performed via E-beam welding under vacuum conditions.
  • the assembly is consolidated, via pressure application thereto, at pressure of about 50 tons - 5,000 tons; preferably less than about 1,000 tons, under low temperature conditions.
  • the male members 8 are friction fit into the corresponding female bores 9.
  • the assembly may be subjected to a low temperature annealing step conducted at temperatures of about room to 400°C for a period of 0.5 to 4 hours. This will help ensure adequate adhesion of the pressure consolidated surfaces.
  • low temperature pressure consolidation refers to pressure consolidation that may occur at temperatures of less than about 50% of the melting temperature of the lower melting member of the target and backing plate. Preferably, this temperature is less than about 200°C; most preferably at about room temperature up to about 38 °C.
  • Fig. 2 there is shown another embodiment of the invention wherein the target and backing plate may be joined by low temperature pressure consolidation.
  • the male projections 8 are in the form of elongated square cross sectioned members that are force fit into square recesses 9 formed in the backing plate 4.
  • Figs. 3 and 4 show the assemblies of Figs. 1 and 2 respectively in their mated positions in which, by reason of the low temperature pressure consolidation, the projecting male members are frictionally free fit in their mating, female recesses and in which the target and backing plate are bondingly joined.
  • Fig. 5 shows, in perspective, the male and female coupling members of the Fig. 1 embodiment.
  • Male members 8 are in the form of a cylindrical dowellike projection adapted for mating with the cylindrical bores 9.
  • the bores 9 have a smaller id than the od of the projecting male members 8.
  • the male members 8 and the bores 9 are arranged in a pattern of concentrically arranged annular rows.
  • Fig. 6 depicts the male/female mating members shown in the Fig. 2 embodiment.
  • the male members 8 are in the form of elongated square cross- sectioned studs adapted for reception into the smaller openings 9.
  • Al target to Al backing plates may be joined using the methods herein disclosed.
  • Other target to backing plate combinations are possible provide the mechanical characteristics of the metals such as hardness and thermal expansion, are similar.
  • the present invention provides advantage over diffusion bonding and other joining techniques that require higher temperatures in the consolidation. Higher temperature conditions sometimes result in undesirable grain growth in the target metal.

Abstract

A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of male projections (8) are formed in one member (2) of the assembly with a plurality of corresponding female recesses (9) formed in the other member (4). The assembly is bonded by conventional techniques around the peripheral boundary (25) that surrounds the male and female portions (8, 9). The assembly is then pressure consolidated at low temperature so that the projections (8), circumscribed by the bonded zone, are force fit into the female recesses (9).

Description

FRICTION FIT TARGET ASSEMBLY
Background of the Invention The present application pertains to a low temperature sputter target backing plate joining technique and to assemblies made thereby.
In my U.S. provisional patent applications 60/099,981, filed September 11, 1998 and 60/129,559, filed April 16, 1999, a target and backing plate are provided wherein the harder material of the two is machined or otherwise formed so as to have a plurality of ridges or other salient surface portions thereof. These ridges or salient portions are formed along the interior surface of the target or backing plate. The ridged surface is then placed alongside the mating surface of the other member of the assembly along the target/backing plate interface wherein joining will occur.
The peripheral portion of the interfacial surface assembly, surrounding the ridges or salient portions, is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum. The assembly is then pressed at a low temperature, preferably at room temperature.
The projections or ridges formed along either the target or backing plate bend upon penetration into the mating metal surface along the target/backing plate interface and form an interlocking grip over the softer metal on the opposing mating surface.
Summary of the Invention In this invention, a target and backing plate are provided wherein both materials are similar in mechanical properties and both are machined or otherwise formed so as to have a plurality of ridges and grooves or other salient surface portions thereof. These ridges or salient portion are formed along the interior surface of the target or backing plate. The ridged surface is then placed alongside the mating surface (having appropriately positioned mating members) of the other member of the assembly along the target/backing plate interface wherein joining will occur. The peripheral portion of the interfacial surface assembly is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum. The assembly is then pressed at a low temperature, preferably at room temperature. The projections or ridges formed along either the target or backing plate penetrate into the mating members along the target/backing plate interface. The projections penetrate into the grooves on the opposing mating surface.
The projections and grooves have different sizes so that after penetration, a force or friction fit joint will be formed. Other objects and advantages of the invention will be apparent from the following description, the accompanying drawings and the appended claims.
Brief Description of the Drawings Fig. 1 is a schematic cross sectional view of a target and backing plate assembly showing the friction fit joining mechanisms in the form of cylindrical male projections ready for insertion into cylindrical bores;
Fig. 2 is a schematic cross section showing another embodiment of the joining members having square male projections in one member and correspondingly square shaped recesses formed in the other member; Fig. 3 is a schematic cross sectional view of the assembly shown in
Fig. 1 in the mating or joined position;
Fig. 4 is a schematic cross sectional view of the assembly shown in Fig. 2 in the mating or joined position;
Fig. 5 is a partially exploded perspective view of the assembly of Fig. 1 before bonding; and
Fig. 6 is a partially exploded perspective view of the assembly of Fig. 2 before bonding.
Detailed Description of the Preferred Embodiment Turning first to Fig. 1 there is shown a target backing plate assembly.
The assembly comprises a target 2 having a top side 23 carrying metal or metal alloy that, in accordance with conventional sputtering methods, will be ejected from the target via ionic bombardment and will travel to and coat the desired substrate.
A backing plate 4 is provided under the target, with the bottom side 11 of the target adapted to mate with the top side 13 of the backing plate to define an interfacial surface area 28. Commonly, a heat exchange fluid such as water is circulated adjacent the bottom side 21 of the backing plate so as to cool the assembly during its sputtering operation.
As shown in the Fig. 1 embodiment a plurality of cylindrical male projections 8 are machined into the surface 11. The surface 13 is provided with cylindrical female bore members 9 of smaller diameter than the diameter of the male projections 8.
In some cases, it is desired to provide a filler material 6, such as an Al 4%Si alloy or other suitable alloy, in the form of a ring or the like, adjacent the peripheral border 25 of the assembly between the target and backing plate. The filler material 6 enhances bonding of the target to the backing plate as shall be explained hereinafter.
The assembly is first bonded around the peripheral border 25. This initial bonding along the peripheral border of the assembly may be achieved by conventional means such as by E-beam welding under vacuum conditions, TIG welding, and friction welding and the like. Preferably, the bonding of the peripheral boundaries of the target and backing plate is performed via E-beam welding under vacuum conditions.
After the peripheral bonding, the assembly is consolidated, via pressure application thereto, at pressure of about 50 tons - 5,000 tons; preferably less than about 1,000 tons, under low temperature conditions. The male members 8 are friction fit into the corresponding female bores 9.
After the low temperature pressure consolidation, the assembly may be subjected to a low temperature annealing step conducted at temperatures of about room to 400°C for a period of 0.5 to 4 hours. This will help ensure adequate adhesion of the pressure consolidated surfaces. The phrase "low temperature pressure consolidation" refers to pressure consolidation that may occur at temperatures of less than about 50% of the melting temperature of the lower melting member of the target and backing plate. Preferably, this temperature is less than about 200°C; most preferably at about room temperature up to about 38 °C.
Turning now to Fig. 2, there is shown another embodiment of the invention wherein the target and backing plate may be joined by low temperature pressure consolidation. Here, the male projections 8 are in the form of elongated square cross sectioned members that are force fit into square recesses 9 formed in the backing plate 4.
Figs. 3 and 4 show the assemblies of Figs. 1 and 2 respectively in their mated positions in which, by reason of the low temperature pressure consolidation, the projecting male members are frictionally free fit in their mating, female recesses and in which the target and backing plate are bondingly joined.
Fig. 5 shows, in perspective, the male and female coupling members of the Fig. 1 embodiment. Male members 8 are in the form of a cylindrical dowellike projection adapted for mating with the cylindrical bores 9. The bores 9 have a smaller id than the od of the projecting male members 8. As shown, the male members 8 and the bores 9 are arranged in a pattern of concentrically arranged annular rows.
Fig. 6 depicts the male/female mating members shown in the Fig. 2 embodiment. Here, the male members 8 are in the form of elongated square cross- sectioned studs adapted for reception into the smaller openings 9.
In one target/backing plate assembly bonding in accordance with the invention, rectangular cross-sectioned male projections were used and frictionally fit into corresponding rectangular female openings. The target and backing plate were both copper and the female openings were about 0.010" smaller than the male members. The male and female members were machined into the respective surfaces. The target/backing plate assembly was pressed so that the male and female coupling members were friction fit. After pressing, the peripheral portion of the assembly was welded via electron beam. After the welding step, a final machining operation was performed so that the welded area was not removed. The locking joint of the invention can therefore be described as a friction fit joint formed between a projecting male member disposed on one member and a corresponding female opening formed in the other member. While the methods described herein, and the target/backing plate assemblies produced in accordance with the methods, have been described with certain specific forms and certain modifications thereof, it will be appreciated that a wide variety of other modifications can be made without departing from the scope and spirit of this invention as defined in the appended claims. It is also to be kept in mind that reference to a metal or metal component herein also includes reference to alloyed forms of the stated metal.
Although copper to copper bonding is specifically mentioned, other metals can benefit from the invention. For example, Al target to Al backing plates may be joined using the methods herein disclosed. Other target to backing plate combinations are possible provide the mechanical characteristics of the metals such as hardness and thermal expansion, are similar.
The present invention provides advantage over diffusion bonding and other joining techniques that require higher temperatures in the consolidation. Higher temperature conditions sometimes result in undesirable grain growth in the target metal.

Claims

-CLATMS-
1. In a method of preparing a bonded sputter target/backing plate assembly comprising a target composed of a metal or alloy to be sputtered and an underlying metallic backing plate member, an improved method for joining said target and backing plate along mating surfaces thereof, comprising: a) forming a plurality of projecting male portions in at least one of said mating surfaces and a plurality of female recesses in said other of said mating surfaces; b) positioning said target and backing plate adjacent each other to form an assembly having an interface defined by said mating surfaces; c) pressure consolidating said assembly under low temperature conditions so that said male portions are friction fit into said female recesses.
2. Method as recited in claim 1 comprising the additional step of (d) bonding said assembly proximate the peripheral boundary of said assembly.
3. Method as recited in claim 2 wherein said step (d) is performed after said step (b) and before said step (c).
4. Method as recited in claim 3 wherein said step (d) comprises e-beam welding of said assembly.
5. Method as recited in claim 4 wherein said step (d) further comprises interposing a weldable filler material between said target and said backing plate proximate said peripheral boundary.
6. Method as recited in claim 2 wherein said step (d) comprises friction welding.
7. Method as recited in claim 2 wherein said step (d) comprises TIG welding.
8. Method as recited in claim 6 wherein said target comprises Cu.
9. Method as recited in claim 2 wherein said step (d) comprises e-beam welding said target along an annular zone located adjacent said peripheral boundary.
10. Method as recited in claim 1 wherein said step (c) comprises pressure consolidating said assembly at about room temperature.
11. Method as recited in claim 2 further comprising (e) low temperature annealing said pressure consolidated assembly.
12. Method of bonding a sputter target to a backing plate member along a plane defined by mating interfacial surfaces of said target and backing plate, said method comprising: a) forming a plurality of projecting male portions in one of said interfacial surfaces, and a plurality of female recesses in said other of said mating surfaces; b) positioning said target and backing plate in a position ready for bonding with said interfacial surfaces adjacent each other, and c) consolidating said target and backing plate at a temperature of less than about 50% of the melting point of the lower melting member of said target and said backing plate and at a pressure sufficient to force fit said male projections into said female recesses.
13. Method as recited in claim 12 wherein said step (c) is conducted at a temperature of less than 200°C.
14. Method as recited in claim 13 wherein said step (c) is conducted at a temperature of less than about 38 °C.
15. Method as recited in claim 14 wherein said step (c) is conducted at about room temperature.
16. Method as recited in claim 15 wherein said target is Cu or Cu alloy.
17. Method as. recited in claim 15 further comprising, prior to said step (c), a step (d) of bonding said target and backing plate member around a peripheral boundary portion of said mating interfacial surfaces.
18. Method as recited in claim 17 wherein said step (d) comprises interposing a weldable filler material between said target and said backing plate along said peripheral boundary portion.
19. Method as recited in claim 17 wherein step (d) comprises e-beam welding.
20. Target Backing plate assembly made by any one of the preceding claims.
21. Combination comprising a sputter target and backing plate, said target and backing plate mating along a plane defined by mating interfacial surfaces of each, a plurality of projecting male portions formed in one of said interfacial surfaces and a plurality of mating female recesses formed in the other of said interfacial surfaces, said male portions being forceably fit into said female recesses.
22. Combination as recited in claim 21 further comprising a peripheral zone formed along said mating surfaces and surrounding said male portions and said female recesses, and a bondable filler material positioned in said peripheral zone.
23. Combination as recited in claim 21 wherein said target comprises Cu.
24. Combination as recited in claim 21 wherein said target comprises Al.
PCT/US2000/018968 1999-07-12 2000-07-12 Friction fit target assembly WO2001003879A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/030,996 US6725522B1 (en) 2000-07-12 2000-07-12 Method of assembling target and backing plates
JP2001509338A JP2003504513A (en) 1999-07-12 2000-07-12 Friction fit target assembly

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14331499P 1999-07-12 1999-07-12
US60/143,314 1999-07-12

Publications (1)

Publication Number Publication Date
WO2001003879A1 true WO2001003879A1 (en) 2001-01-18

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PCT/US2000/018968 WO2001003879A1 (en) 1999-07-12 2000-07-12 Friction fit target assembly

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JP (1) JP2003504513A (en)
KR (1) KR100823045B1 (en)
TW (1) TW483793B (en)
WO (1) WO2001003879A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1349698A1 (en) * 2000-12-15 2003-10-08 Tosoh Smd, Inc. Friction fit target assembly for high power sputtering operation
WO2004024972A2 (en) * 2002-09-13 2004-03-25 Tosoh Smd, Inc. Systems and methods for a target and backing plate assembly
WO2010045026A2 (en) * 2008-10-15 2010-04-22 Applied Materials, Inc. Control of erosion profile on a dielectric rf sputter target
US8404310B2 (en) 2007-08-02 2013-03-26 Dow Global Technologies Llc Thermoset dampener material
CN104646817A (en) * 2014-12-22 2015-05-27 有研亿金新材料有限公司 Connection method of aluminum target material as sputtering target material and aluminum alloy backboard

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706926B2 (en) * 2006-03-17 2011-06-22 三菱マテリアル株式会社 Method for manufacturing target with backing plate
US8702919B2 (en) 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof

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JPS5236373A (en) * 1975-09-17 1977-03-19 Hitachi Ltd Automtaic insertion method of articles
US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
US5143590A (en) * 1991-07-10 1992-09-01 Johnson Matthey Inc. Method of manufacturing sputtering target assembly
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236373A (en) * 1975-09-17 1977-03-19 Hitachi Ltd Automtaic insertion method of articles
US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
US5143590A (en) * 1991-07-10 1992-09-01 Johnson Matthey Inc. Method of manufacturing sputtering target assembly
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1349698A1 (en) * 2000-12-15 2003-10-08 Tosoh Smd, Inc. Friction fit target assembly for high power sputtering operation
EP1349698A4 (en) * 2000-12-15 2008-01-16 Tosoh Smd Inc Friction fit target assembly for high power sputtering operation
WO2004024972A2 (en) * 2002-09-13 2004-03-25 Tosoh Smd, Inc. Systems and methods for a target and backing plate assembly
WO2004024972A3 (en) * 2002-09-13 2004-05-27 Tosoh Smd Inc Systems and methods for a target and backing plate assembly
KR101024831B1 (en) * 2002-09-13 2011-03-25 토소우 에스엠디, 인크 Systems and methods for a target and backing plate assembly
US8404310B2 (en) 2007-08-02 2013-03-26 Dow Global Technologies Llc Thermoset dampener material
WO2010045026A2 (en) * 2008-10-15 2010-04-22 Applied Materials, Inc. Control of erosion profile on a dielectric rf sputter target
WO2010045026A3 (en) * 2008-10-15 2010-07-01 Applied Materials, Inc. Control of erosion profile on a dielectric rf sputter target
CN102187431B (en) * 2008-10-15 2014-08-20 应用材料公司 Control of erosion profile on a dielectric RF sputter target
CN104646817A (en) * 2014-12-22 2015-05-27 有研亿金新材料有限公司 Connection method of aluminum target material as sputtering target material and aluminum alloy backboard

Also Published As

Publication number Publication date
TW483793B (en) 2002-04-21
KR20020037746A (en) 2002-05-22
KR100823045B1 (en) 2008-04-18
JP2003504513A (en) 2003-02-04

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