WO2000079657A1 - A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector - Google Patents

A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector Download PDF

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Publication number
WO2000079657A1
WO2000079657A1 PCT/US2000/017127 US0017127W WO0079657A1 WO 2000079657 A1 WO2000079657 A1 WO 2000079657A1 US 0017127 W US0017127 W US 0017127W WO 0079657 A1 WO0079657 A1 WO 0079657A1
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laser
saturable
semiconductor laser
cavity
disposed
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English (en)
French (fr)
Inventor
Ming C. Wu
Ji-Lin Shen
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University of California Berkeley
University of California San Diego UCSD
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University of California Berkeley
University of California San Diego UCSD
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Priority to JP2001505117A priority Critical patent/JP2003521106A/ja
Priority to AT00943033T priority patent/ATE431002T1/de
Priority to DE60042157T priority patent/DE60042157D1/de
Priority to EP00943033A priority patent/EP1188207B1/en
Publication of WO2000079657A1 publication Critical patent/WO2000079657A1/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Definitions

  • the invention relates to semiconductor lasers and in particular to rrode locked semiconductor lasers having an external resonant cavity.
  • Ultrashort optical pulses have found broad applications in electrooptic sampling, broad-band submillimeter-wave generation, optical computing, and other areas of optoeletronics.
  • Mode locked semiconductor lasers in particular are compact sources of ultrashort pulses.
  • Passive and hybrid mode locking has been employed to generate sub-picosecond pulses in semiconductor lasers.
  • the saturable absorber used in a passive or hybrid mode locked semiconductor laser needs to satisfy the following requirements: (1) the absorber should saturate faster than the gain media; and (2) the recovery time of the saturable absorber should be faster than that of the gain media.
  • SBR semiconductor saturable Bragg reflector
  • the saturable Bragg reflector consists of semiconductor quantum wells embedded in a Bragg reflector and functions as a nonlinear mirror for saturable absorption. This design reduces the losses introduced in the cavity and increases the saturation intensity and the damaging threshold.
  • Femtosecond pulses have been generated using saturable Bragg reflector in passive solid-state lasers and fiber lasers as described in certain ones of the above references.
  • semiconductor optical sources have some special advantages.
  • the semiconductor lasers provide the advantages for high quantum efficiency, electrically pumped and high repetition frequency in the optical communication system.
  • the semiconductor lasers combined with the saturable Bragg reflector have, however, not been studied or understood.
  • Monolithic mode-locked semiconductor lasers generating 100 fs optical pulses with high pulse energy play an important role for high-bit rate time-division multiplexed (TDM) systems. Though such short optical pulses have been demonstrated in semiconductor gain medium using external cavities and additional pulse compression, those lasers are very bulky and not suitable for practical applications. Monolithic mode-locked semiconductor lasers are compact, light weight, energy efficient, and do not require optical alignment. Though very impressive performance (600 fs pulse width, 350 GHz repetition frequency) has been demonstrated, the pulse energy of this type of multiple contact quantum well lasers is limited by the intra-cavity saturable absorber ( ⁇ 10 fJ). Such energy is not sufficient for most all-optical switching/demultiplexing systems.
  • the invention is a laser capable of generating short pulses of less than 1000 femtoseconds comprising a semiconductor laser. And a resonant optical cavity having a reflecting mirror in which the mirror comprises a saturable Bragg reflector.
  • the semiconductor laser comprises a InGaAs/lnGaAsP/lnP buried heterostructure multiple quantum well laser fabricated using organometallic vapor phase epitaxy.
  • the resonant optical cavity is an external cavity, while in a second embodiment it is an internal cavity.
  • the internal cavity includes an antiresonant Fabry-Perot saturable absorber disposed between a pair of diffraction Bragg reflectors within the internal cavity.
  • the laser further comprises an inclined monolithic mirror to direct light to the antiresonant Fabry-Perot saturable absorber within the internal cavity.
  • the laser includes a basal substrate.
  • the antiresonant Fabry-Perot saturable absorber is disposed on the substrate and the semiconductor laser is disposed on the antiresonant Fabry-Perot saturable absorber.
  • the semiconductor laser may be disposed on the substrate and the antiresonant Fabry-Perot saturable absorber disposed on the semiconductor laser.
  • the saturable Bragg reflector is comprised of substrate, a Bragg stack disposed on the substrate and a multiple quantum well disposed on the Bragg stack.
  • the substrate is composed of GaAs.
  • the Bragg stack is comprised of multiple layers of GaAs/AIAs.
  • the multiple quantum well is comprised of multiple layers of InGaAs/lnGaAsP.
  • the laser further comprises a dispersive optic fiber optically coupled to the semiconductor laser for receiving and transmitting output therefrom to reduce frequency chirp.
  • the optic fiber has a length which has been selected to minimize pulse width of the output from the semiconductor laser.
  • the invention is also a method of generating short laser pulses of less than 1000 femtoseconds in a mode locked laser comprising the steps of providing a semiconductor laser; providing a resonant external optical cavity having a reflecting mirror, the mirror comprising a saturable Bragg reflector; coupling the resonant optical cavity in alignment with the semiconductor laser; adjusting external cavity alignment, reverse-bias voltage of an on-chip saturable absorber in the semiconductor laser and forward gain currents of a gain section in the semiconductor laser to obtain a stable optical pulse output.
  • the forward gain currents and reversebias voltage are biased to minimize pulse width of the stable optical pulse output.
  • Fig. 1 is a schematic of a bench test unit to demonstrate mode locking with saturable Bragg reflector.
  • Fig. 1A is an enlarged cross-sectional diagram showing the structure of saturable Bragg reflector.
  • Fig.2 is a graph of the reflection spectra of an InP/lnGaAsP and GaAs/AIAs Bragg reflector.
  • Fig. 3 is a graph of the SHG autocorrelation traces of the output pulses from the mode-locked laser with a planar mirror in the external cavity.
  • the pulsewidth is 5.2 ps.
  • Fig. 4 is a graph of the SHG autocorrelation traces of the output pulses from the mode-locked laser with the saturable Bragg reflector in the external cavity.
  • the pulsewidth is 1.9 ps.
  • Fig. 5 is the time-averaged optical spectrum of the modelocked laser which corresponds to Fig. 4.
  • Pig. 6 is a graph of the SHG autocorrelation traces after compression using SMF at different fiber lengths. The shortest pulsewidth is found when the SMF length at 35 m.
  • Fig. 7 is a graph of the SHG autocorrelation traces wherein the shortest pulses are compared with the calculated values using the hyperbolic second waveform.
  • Fig. 8 is a simplified side cross-sectional view of a second embodiment in which the resonant cavity is internal.
  • semiconductor optical sources have some special advantages.
  • the semiconductor lasers provide the advantages for high quantum efficiency, electrically pumped and high repetition frequency in the optical communication system.
  • the preferred embodiment describes the use of a semiconductor laser, which has much lower intensities than solid sate gain media.
  • the mode locking with saturable Bragg reflector is therefore different from that of solid state lasers.
  • an external cavity mode-locked semiconductor lasers with saturable Bragg reflector to generate the sub-picosecond pulses for the first time. This provides the potential for the applications in communication or electro-optic sampling system.
  • Mode locked pulses with 1.9 picosecond duration are generated by the present invention without external compensation.
  • optical pulses with duration ⁇ 880 femtoseconds were achieved.
  • the laser 10 used in the illustrated embodiment in Fig. 1 is a buried heterostructure InGaAs/lnGaAsP/lnP multiple quantum well laser grown by organometallic vapor phase epitaxy.
  • the multiple quantum well active region is comprised of five 5-nm-thick InGaAs quantum wells separated by four 22.5nm-thick InGaAsP barrier layers.
  • the lasing wavelength of the laser is 1.55 ⁇ m.
  • the laser is
  • the pulse repetition rate of mode locked semiconductor laser 10 is reduced to 1 GHz by coupling laser 10 to an external cavity 24 through two lenses, 18 and 20 as shown in Fig. 1.
  • a conventional mirror or saturable Bragg reflector 22 is used as the reflector of the external cavity 24.
  • the facet 26 facing external cavity 24 is antireflection (AR) coated to less than 1 % reflectivity by a Si-SI0 2 thin film.
  • AR antireflection
  • the structure of the saturable Bragg reflector 22 is shown in Fig. 1A.
  • Saturable Bragg reflector 22 is comprised of a semiconductor Bragg stack 28 and two sets of 15
  • InGaAs/lnGaAsP strain-compensated multiple quantum wells 30 separated by 80 nm of lattice matched InGaAsP which is a conventional structure as described in greater detail in C. H. Lin, C. L. Chua, Z. H. Zhu, F. E. Ejeckam, T. C. Wu, and Y. H. Lo, "Photopumped Long Wavelength Verticle-Cavity Surface-Emitting Lasers Using Strain-Compensated Multiple Quantum Wells", Appl. Phys. Lett. Vol. 64, 3395, 1994.
  • 27 pairs of GaAs/AIAs quarter-wave stack 28 is employed as the Bragg reflector instead of the conventional InGaAsP/lnP mirror.
  • GaAs/AIAs reflector 22 shows broader reflection bandwidth and lower loss, because it has a large refractive index step. This is important for short pulse generation with the saturable Bragg reflector at the telecommunication wavelength of 1.55 ⁇ n. Since the GaAs/AIAs mirror stack 28 is grown on a GaAs substrate 32, a conventional wafer-bonding technique is used to integrate the InP-based quantum wells 30 with the GaAs-based Bragg reflector 28 as is described in C. H. Lin, et.al.
  • Fig. 1 for testing.
  • An optical isolator 36 has been employed to prevent the disturbance from reflected light.
  • the output light is then amplified by a diode-pumped erbium-doped fiber amplifier (EDFA) 38 and directed to a noncollinear second harmonic generation (SHG) autocorrelator 40 with a LiNbO 3 crystal and an optical spectrum analyzer 42.
  • EDFA diode-pumped erbium-doped fiber amplifier
  • SHG noncollinear second harmonic generation
  • the threshold current of AR-coated laser 10 is reduced from 95 mA to 58 mA when it is aligned in external cavity 24.
  • the pulse repetition frequency was adjusted to be 1 GHz, corresponding to the round-trip frequency of external cavity 24.
  • Stable short optical pulses are achieved by properly adjusting the cavity alignment, reverse-bias voltage, and forward gain currents.
  • different external reflectors planar mirror and saturable Bragg reflector
  • the shortest optical pulses width of 5.2 ps is obtained when the gain section and the on-chip saturable absorber are biased to 118 mA and - 1.9 V, respectively.
  • the autocorrelation trace is shown in Fig. 3 which shows a pulse width of 5.2 ps. Under the same bias condition, the pulse width is reduced to 1.9 ps as shown in Fig. 4 when the planar mirror is replaced by a saturable Bragg reflector of Fig. 1A.
  • Saturable Bragg reflector 22 is involved in the pulse-shortening although the mode- locking is started by the on-chip saturable absorber. The shorter pulse duration in the latter case indicates that the mode-locking mechanism is dominated by the absorption dynamics of saturable Bragg reflector 22.
  • the mode locking in the laser is still started by the on- chip saturable absorber.
  • saturable Bragg reflector 22 is involved in the pulse-shortening. This can be proven by the fact that shorter pulses duration were generated by using saturable Bragg reflector 22.
  • the effect of saturable Bragg reflector 22 in the mode locking mechanism is somewhat complicated due to the combined absorption of saturable Bragg reflector 22 and the on-chip saturable absorber.
  • the detailed mechanism regarding the function of saturable Bragg reflector 22 is not well understood. It is believed that the function of saturable Bragg reflector 22 is probably to help to speed up the recovery time of the absorption.
  • the peak wavelength is tunable by adjusting the position of the focusing lens 20 between laser 10 and saturable Bragg reflector 22 due to the chromatic aberrations in cavity 24.
  • the wavelength of laser 10 was moved away from the excitonic absorption of saturable Bragg reflector 22, the broadening of optical spectrum disappeared and the width of output pulses also increased. This demonstrates the effectiveness of saturable Bragg reflector 22 to broaden the mode-locked spectral width and shorten the optical pulses.
  • the optical spectrum corresponding to the 1.9-ps-long pulses is shown in Fig. 5.
  • the spectral width of the mode-locked pulses is approximately 7 nm.
  • the time- bandwidth product of 1.63 is significantly larger than the theoretical value of 0.31 for transform-limited sech 2 pulses. This indicates that the pulses are strongly chirped, which may be due to the saturation of the carrier density in the absorber and the gain section.
  • the pulse width can be shortened by compensating the frequency chirp. Grating pairs as described in M. Stern, J. P. Heritage, and E. W. Chase, "Grating Compensation Of Third-Order Fiber Dispersion", IEEE J. Quantum Electron., Vol. 28, 2742, 1992; and R. A. Salvatore, T. Schrans, and A.
  • the length of the single mode fiber has been optimized for shortest pulse width.
  • the autocorrelation traces measured for various lengths of the single mode fiber are shown in Fig. 6.
  • the shortest pulses are achieved when the length of single mode fiber is 35 m, corresponding to the total dispersion of 0.64 ps/nm.
  • the autocorrelation trace of the shortest pulses is fitted by a sech 2 -pulse shape with a duration of 880 fs, as shown in the Fig. 7.
  • the time- bandwidth product is reduced to 0.76 after the compensation.
  • the deviation between the theory and experiment in the pedestal of the curve as shown in Fig. 7 indicates the presence of high-order chirps.
  • the high-order chirp can be compensated by using two types of the optical fibers with different group-velocity dispersions as described by S. Arahira, S. Kutsuzawa, Y. Matsui, and Y. Ogawa, "Higher Order Chirp Compensation Of Femtosecond Mode-Locked Semiconductor Lasers Using Optical Fiber With Different Group Velocity Dispersions", IEEE J. of Selected Topics in Quantum Electron., Vol. 2, pp.480, 1996, or using the grating pair method M. Stern et.al., supra.
  • the output pulses generated by laser 10 have also been compensated with planar mirror.
  • the compressed pulses have a pulsewidth of 3.8 ps (not shown here), which is much longer than 880 fs.
  • a saturable Bragg reflector 22 is very effective for subpicosecond pulse generation in an external cavity mode locked semiconductor laser 10.
  • the illustrated invention is a femtosecond semiconductor laser 44 as shown in Fig. 8 which employs a vertically coupled antiresonant Fabry-Perot saturable absorber 46.
  • Laser 44 is comprised of a conventional edge-emitting semiconductor laser 48 sitting on top of epitaxial antiresonant Fabry-Perot saturable absorber 46 having a diffraction Bragg reflector 50 disposed between laser 48 and absorber 46 and a diffraction Bragg reflector 52 disposed between basal substrate 54 and absorber 46 as shown in Fig. 8.
  • Laser 44 is coupled to antiresonant Fabry-Perot saturable absorber 46 through a monolithic dry-etched 45° mirror 56.
  • Diffraction Bragg reflector 50 is arranged and configured so that it is partially reflective and partially transmissive, like a half- ⁇ ilvered mirror, or at least has a window defined therethrough to allow transmission of at least a portion of the light from mirror 56 into antiresonant Fabry-Perot saturable absorber 46.
  • saturable absorber 46 is decoupled from the gain medium of laser 48 and, therefore, can be separately optimized for shorter pulses. For example, it can be made into a fast saturable absorber by employing lowtemperature grown GaAs.
  • the concept of an antiresonant Fabry-Perot saturable absorber in general was first proposed by Keller et al for solid state laser.
  • the structure of the proposed femtosecond semiconductor laser is particularly suitable for monolithic integration.
  • the epitaxial layers of laser 44 lie directly on top of the antiresonant Fabry-Perot saturable absorber layers 50, 46 and 52.
  • the diffraction Bragg reflector mirrors 50 and 52 and the antiresonant Fabry-Perot saturable absorber 46 can alternatively be placed on top of the laser layers, the reverse stacking order of Fig.
  • the epitaxial diffraction Bragg reflector mirrors 50 and 52 can either be grown by epitaxy or dielectric deposition.
  • the diffraction Bragg reflector mirrors 50 and 52 have a broad reflection bandwidth of 70 nm, and can support optical pulses shorter than 50 fs.

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PCT/US2000/017127 1999-06-22 2000-06-21 A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector Ceased WO2000079657A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001505117A JP2003521106A (ja) 1999-06-22 2000-06-21 可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ
AT00943033T ATE431002T1 (de) 1999-06-22 2000-06-21 Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel
DE60042157T DE60042157D1 (de) 1999-06-22 2000-06-21 Halbleiterlaser mit einem sättigbaren bragg-refektorspiegel
EP00943033A EP1188207B1 (en) 1999-06-22 2000-06-21 A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector

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US09/338,458 1999-06-22
US09/338,458 US6449301B1 (en) 1999-06-22 1999-06-22 Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors

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