WO2000072076A1 - Probe tip that is transparent to light and method for producing the same - Google Patents

Probe tip that is transparent to light and method for producing the same

Info

Publication number
WO2000072076A1
WO2000072076A1 PCT/EP2000/004655 EP0004655W WO0072076A1 WO 2000072076 A1 WO2000072076 A1 WO 2000072076A1 EP 0004655 W EP0004655 W EP 0004655W WO 0072076 A1 WO0072076 A1 WO 0072076A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
light
layer
probe
tip
optical
Prior art date
Application number
PCT/EP2000/004655
Other languages
German (de)
French (fr)
Inventor
Jürgen BRUGGER
Hulst Niek Van
Original Assignee
Brugger Juergen
Hulst Niek Van
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/18SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
    • G01Q60/22Probes, their manufacture, or their related instrumentation, e.g. holders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70375Imaging systems not otherwise provided for, e.g. multiphoton lithography; Imaging systems comprising means for converting one type of radiation into another type of radiation, systems comprising mask with photo-cathode
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermo-magnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10532Heads
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/135Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
    • G11B7/1387Means for guiding the beam from the source to the record carrier or from the record carrier to the detector using the near-field effect

Abstract

The invention relates to a probe tip that is transparent to light, for emitting and/or receiving light in a specific manner, for use in an optical analyzing or processing system for examining and/or processing surfaces with an optical resolution in the sub-light wavelength range. The inventive probe tip has a body (5) consisting of a light-conductive material, with a surface that is coated with a light-absorbing layer (2). Said layer is interrupted by at least one through opening (3), through which the light passes. The invention also relates to a method for producing the probe tip. The invention is characterized in that the through opening in the layer is completely filled with the light conductive material and in that said light-conductive material finishes flush with the light-absorbing layer or protrudes beyond said layer. The inventive probe tip can be used in the fields of near field microscopy, optical photolithography and in magnetic/optical memories

Description

Light transparent probe tip as well as methods for producing such

technical field

The invention relates to a light transparent probe tip and to a method for producing such for the targeted light-emitting and / or light receiving for use in an optical analysis or processing system for examination and / or treatment of surfaces with an optical resolution in the sub-light wavelength region that a group consisting of a light-conducting material body having a surface which is coated with a light-absorbing layer, which is interrupted by at least one through-opening, passing through the light.

State of the art

The invention of the scanning tunneling microscope (STM) in 1982 has drawn a rapid development of cognate scanning probe microscopes according to, for example, the atomic force microscope (AFM) or the near-field optical microscope (SNOM). The most widespread is now the AFM because it allows the analysis and editing of arbitrary and non-conductive materials.

The success of the AFM is partly due to the fact that the need to so-called tips, samples or tips were already in the early development phase in excellent quality and cheap disposal. This was a vast and fast - conducive dissemination of the instrument, and has also triggered new techniques and methods - almost avalanche. Near-field optical methods would be the AFM even superior in some aspects, because in addition to topographical and optical properties can be investigated by surfaces. This factor plays an important role especially in biology, since light 'powerless' acts and does not affect the structure and is changed.

The reason why SNOM is not as widespread as the AFM is partly due to lack of high quality and cost SNOM tips. Improved and cheaper SNOM tips would improve the state of the art in many areas, such as the near-field microscopy in areas such as biology, medicine, material science, as well as methods of magneto-optical storage devices and methods of photoresist structuring of semiconductor manufacturing.

Today's most widely used probes for near-field microscopy are drawn or etched glass fibers 1 (see Figure 1a) with a metal shell 2 and nachgefertigter aperture 3, which are typically prepared by the following process steps: The shape of the probe tip is drawn from a glass fiber 1 and / or etched (see Figure 1 a step 1). Subsequently, the optical fiber 1 with a metal layer, eg. Aluminum, vapor deposited (step 2). Finally, an opening of the metal layer 1 at the tip of the probe is carried out, whereby a through opening or aperture 3 is obtained (step 3). Such NFO samples currently have the highest resolution. (See also: Betzig E, TRAUTMAN JK, Harris TD, WEINER JS, KOSTELAK RL; BREAKING THE BARRIER DIFFRACTION - OPTICAL MICROSCOPY ON A NANO METRIC SCALE; SCIENCE 251 (5000) 1468-1470 MAR 22 1991).

However, the geometry of the tip is unfavorable in terms of the achievable through the aperture the light intensity. This is due to the so-called cut-off problem. Cut-off is a expontieller loss of the intensity of a wave along the propagation direction, as soon as the lateral dimensions of the conductor is equal to or smaller than the wavelength, visible light at about 500 nm. The drawn or etched probes are on the last micrometer already very closely, so that "cut" in this last span in the waveguide 3-4 order of magnitude in intensity and so limit the feasible amount of light.

During vapor deposition of a metal film can not achieve a high-quality layers due to the free-standing tip, as for example, is possible on planar surfaces. Are formed mainly grains 4 of the metal layer 2, whereby the thickness is inhomogeneous. The opening of the aperture by means of the Focused ion beam V and V s. There are two options:

According to Figure 1 b, the ion beam V F comes from the front. Here you have no control over the exact depth of the light guide behind the aperture 3 (which in itself is already a serious disadvantage). Further, grains 4, which prevent the approach of the aperture 3 to a work surface, not removed.

Referring to FIG. 1c, the beam V s coming from the side. Here are indeed solved the previous problems, but the aperture size varies depending on the film thickness of the metal film 2 and approach plane of the beam Vs.

Further disadvantages of the drawn / etched NFO samples may be mentioned: The samples suffer from high light intensity losses, as the light on the way in the waveguide to the aperture out already over a distance of several wavelengths in the so-called "cut-off region" located. This is exponential drop in intensity, typical losses of 3-4 orders of magnitude, respectively.

(The metal layer is applied by vapor deposition / etch after the glass drawing, and thus is not (of optimum quality prilling closely .: grains) and not (of homogeneous thickness smaller radius at free-standing glass tip)), as already mentioned. The NFO samples have an aperture which is formed at the end of the manufacturing process, for example by ion-beam or etching. This is an expensive and not 100% reproducible step because "by hand" each sample individually must be processed. Furthermore, the samples suffer most under poor light polarization properties since the opening has no well-defined geometry. You also do not have a "flat" end the probe on. This prevents the aperture can be brought sufficiently close to the near-field region, for example at distances of about 10 nm and below. This results in intensity and resolution losses.

An array-like arrangement of multiple peaks coming off with this technique. Basically, the production costs are too high.

An alternative to the aforementioned structure of the probe tip is etched their preparation light-conducting material (glass, quartz, silicon dioxide / Nitride) by means of microfabrication methods and subsequent vapor deposition of metal. See: cantilever probes for SNOM applications with single and double aperture tips Oesterschulze E, Rudow O, Mihaicea C. Scholz W, Werner SULTRAMICROSCOPY 71: (1-4) 85-92 MAR 1998th

However NFO microfabricated tips from etched glass, silicon dioxide / nitrides also suffer from the geometrically caused, as defined above, 'cut-off phenomenon. The aperture is defined herein by means of etching techniques in the required range (~ 10 nm) only provide insufficient precision, because of edge effects, timing, no etch stop, etc ..

Also hollow NFO samples of silicon nitride are produced by means of molding process into (such as standard spikes AFM) and aperture nachgefertigter known, see "Microfabrication of near-field optical probes Ruiter AGT, Moers MHP, Vanhulst NF, deBoer MJournal OF VACUUM SCIENCE & TECHNOLOGY B 14: (2) 597-601 MAR APR 1996th

but hollow NFO samples do not have a wave-conducting material with high refractive index (> 1:45) in which the light is out, what (... intensity, diffraction, polarization properties) in turn leads to losses. Finally, devices for probe tips or sample for sub-wavelength optical lithography are known which are based on the basis of optical glass fibers or solid immersion lenses. See: Surface modification in the optical near field Krausch G, J Mlynek MICROELECTRONIC ENGINEERING 32: (1-4) 219-228 in September 1996; Near-field photolithography with a solid immersion lens, LPGhislain et al., Applied Physics Letters Vol. 74, Number 4, 25 January 1999th

In the use of optical glass fibers, the optical intensity is limited by the 'cut- off' problem, which requires slow scan speeds, so as to irradiate the photoresist with the necessary dose of light. This in turn is too slow as an alternative to existing methods. Solid-immersion-lens (SIL) is faster because a much higher dose of light is brought to the paint. The technique is currently (and probably in principle) limited at about 100 nm lateral resolution. In the future, line widths are less than 100 nm and even 10 nm may be required.

Summary of the Invention

The object of the invention is based on a light transparent probe tip for the targeted light-emitting and / or light receiving for use in an optical analysis or processing system for examination and / or treatment of surfaces with an optical resolution in the sub-light wavelength range, a light conducting of a material existing body having a surface which is coated with a light-absorbing layer, which is interrupted by at least one passage opening, passes through the light form such that the above-mentioned disadvantages are eliminated. Furthermore, a low-cost manufacturing method will be described, with which it is possible to obtain probe tips of high precision.

The solution of the problem underlying the invention is specified in claims 1 and 15 °. Advantageous embodiments of the invention are subject of the subclaims. The light transparent probe tip according to the invention for the targeted light-emitting and / or light receiving for use in an optical analysis or processing system for examination and / or treatment of surfaces with an optical resolution in the sub-light wavelength region, which has a group consisting of a light-conducting material body with a surface which is covered by a light-absorbing layer, which is interrupted by at least one passage opening, passes through the light, is formed in that the passage opening is completely filled by the layer with the light conductive material and in that the light conductive material flush with the light-absorbing terminating layer or projects beyond.

The novel NFO structure shows a significantly higher light intensity (-1000-fold) by the "cut-off" significantly reducing geometry while maintaining aperture (resolution) and thus enhances the signal quality by optical microscopy as well as the throughput of photoresist lithography applications.

It shows a well-defined polarization property by a symmetrical geometry of the aperture and the waveguide in the field and in the aperture.

It also shows a NFO structure with a flat front and allows approximating the aperture on the surface to be worked up in the near field range (<10 nm) with high resolution and high intensity.

The probe tip according to the invention may further use in ultra-high resolution optical lithography found with the same high resolution, light intensity, and thus increases the throughput. This technique is in future (nano) electronic parts with increasingly smaller dimensions of increasing importance.

The probe tip according to the invention has a novel structure that can be used in super-resolution near-field-optical methods beyond the diffraction related limitations of light, for example in microscopy or in optical photolithography. In order to achieve a resolution in sub-wavelength, the light beam through a small aperture, through opening or aperture with an opening width of about 10- 50 nm, is performed, which is filled with light-conducting material. The lateral resolution of the light wave in the near field (working area) behind the aperture substantially corresponds to the size of the passage opening. In order for a high light intensity is obtained after the narrow passage opening, this is as short as necessary formed, ie, the layer thickness of the light absorbing layer is only a few 10 nm to shield light from the side of the diaphragm.

The passage opening is just long, that is, the layer thickness, at least in the region of the passage opening is formed so thick that the cut-off problem does not occur. Here, the probe tip is formed to shortly before the passage opening, that the light-conducting material provides greater lateral spatial extent than is predefined by the clear width of the through opening itself. In this it is ensured that a lateral optical confinement is effected solely by the geometry of the through hole itself and not by others, the lateral light waveguide limiting means, as is the case for example with conically tapered optical waveguides, which are surrounded by a metal sheath.

The probe tip is applied in all fields of optical microscopy (life science, biology, Single Molecular Detection, DNA analysis, etc.), (in integrated optics, magnetic-optical data storage, as well as in optical lithography applications for microelectronics circuits, VLSI, nanoelectronics, structuring at the molecular scale, ...).

The structure combines the two most important requirements for the applications mentioned above:

1. High intensity of light (this is important for a high signal quality in microscopy, and a high dose for photoresist patterning processes,

2. a small aperture (for a high lateral resolution). Advantageous properties of the probe tip are:

- the neighboring region around the through-opening is sufficiently flat or planar, and thus forms a large enough acceptance angle for the incident light without intensity losses.

- the structure is prepared by a novel 'nano-molding "process in which advance the first aperture is made in a suitable material lichtabweisendem and then conformally filled with waveguiding material.

The process for producing a light-transparent probe tip is characterized by the following process steps:

Forming a spatial shape of the light guiding body determined shape,

Depositing a light absorbing layer on the mold surface,

Introducing through-holes in the deposited on the mold surface, light absorbing layer,

Filling with the mold, solidifying to a light guiding body material, and

Isolating the solidified light guiding body with the light-absorbing

Layer from the mold.

The structure can be cost-effectively with the above micro-technical process, produced in large quantities, and reproducible, since the mold is reusable. The method is also suitable for the production of 'arrays' which are used in optical parallel processing / analysis of surfaces. In this case, for the same maximum resolution, a high throughput is achieved (wafer lithography).

Summary of the Invention

The invention is described below, without limiting the general inventive idea with reference to embodiments with reference to the accompanying drawing. In the drawings: Fig 1 ac light transparent probe tip according to the prior art.

FIG. 2 ad Alternative embodiments of the light transparent probe tip according to the invention,

Fig. 3 light transparent probe tip of flexible beams and

Fig. 4 sequence images of the manufacturing process

WAYS OF IMPLEMENTING THE INVENTION, INDUSTRIAL APPLICABILITY

With respect to Figure 1 reference is made to the above in the introduction to the assessment of the prior art.

In Figure 2a, a probe tip is shown, which consists essentially of a, a planar surface 7 comprising body 5, which is made of light-conducting material, for example. PDMS, SU8, glass or the like. Furthermore, light emitting polymers (OLED = organic light emitting diodes) as the active light sources are also conceivable, which emits the light through the aperture.

On the flat surface of a metal layer 2 is applied, which provides a through hole 3, the so-called aperture. The through-hole 3 is fully filled with the light-conducting material. The surface of the metal layer 2 and the through hole are made flush with the side of the surface. 6

The through hole has a diameter A approximately between 10 and 50 nm. The thickness of the metal layer amounts to D -10-30 nm. The aperture of the through hole has a large opening angle of approximately 90 degrees for incident light on. The metal layer 2 and the light conductive material in the through hole located on the working surface 6 facing side on the same level; Therefore, the light guide can be approximated to the surface to be worked up in the near field range (<10 nm). The structure thus combines a high intensity with extremely high lateral resolution. The "cut-off" problem no longer occurs here in practice.

A variation of the probe tip is shown in Fig. 2b. It has the shape of a beheaded inverted pyramid, or a truncated cone. Thus access to rough surfaces is guaranteed (as AFM). In this case, the area is minimized. The light conductive material of the body 5 has been conformally filled in the metal layer 2 to the through hole. 3

A further variation is shown in Fig. 2c. Here, the light-conducting body 5 is semicircular.

In Figure 2d, the body 5 and the metal layer 2 has a plurality of through-holes 3, which may also be arranged array shaped.

A further variation of the probe tip is shown in Fig. 3. The probe tip is located on a flexible diaphragm 7 or bending beam (such as AFM), to compensate for differences in height.

The production process is shown in Fig. 4. It is characterized by the following steps:

Step 1: etching a trough with the (negative) form of the later structure Step 2: deposition of the metal film 2; to be vapor surface is planar

(As opposed to etched peaks). Thus, an improved here

Quality achieved with well-defined layer thickness. Step 3: Open the aperture 3 (lithography, lift-off, focussed ion beam) Step 4: conformal fill the aperture 3 with waveguiding material 5 (polymer, PDMS, SU8, glass ...); these materials form geometries to in the nanometer range from conformally. Step 5: Polymerization / hardening of the material and removing the structure from the trough of the trough reuse / shape.

A variation uses a sacrificial layer between the metal and trough which is selectively removed at the end. This operation is preferably performed between steps 3 and 4. FIG.

The Herausloesen the light guiding body with the light absorbing layer is facilitated by providing a corresponding sacrificial layer by a so-called 'adhesion disassembly' is introduced between the Abeitsflaeche and to remove double layer of light-absorbing and light-conductive material. This is introduced for example by means selbsorganisierenden organic molecules, so-called "self-assembled monolayer" without effort. The thickness depends on the material and the process with sub-nanometer Sends thicknesses are possible This layer forms a kind of carpet, on which the following layers. can be built. the extremely thin layer thicknesses, a roughness structuren nanometers are mapped exactly. This is important here for the special geometry is not 'round'.

Another variation uses an already detached Metallapertur and fills it with light-conducting material; this surface chemical effects are used (surface tension polar materials and capillary effects) to the aperture to fill optimal)

Claims

claims
1. Light Transparent probe tip for the targeted light-emitting and / or light receiving for use in an optical analysis or processing system for examination and / or treatment of surfaces with an optical resolution in the sub-light wavelength region, which has a group consisting of a light-conducting material body with a surface which is coated with a light-absorbing layer, which is interrupted by at least one passage opening, passes through the light, characterized in that the passage opening is completely filled by the layer with the light conductive material and in that the light conductive material flush with the light-absorbing layer flush or projects beyond.
2. Light Transparent probe tip according to claim 1, characterized in that a portion of the surface layer is directly formed flat adjacent to the passage opening.
3. Light Transparent probe tip according to claim 1 or 2, characterized in that the passage opening has a circular cross section with a diameter between 10 and 50 nm.
4. Light Transparent probe tip according to one of claims 1 to 3, characterized in that the light-absorbing layer has a layer thickness of about 10 - 30 nm has.
5. Light Transparent probe tip according to one of claims 1 to 4, characterized in that the newly formed around the passage opening area is at least a 100 nm wide.
6. Light Transparent probe tip according to one of claims 1 to 5, characterized in that the light absorbing layer is formed as a metal film.
7. Light Transparent probe tip according to one of claims 1 to 6, characterized in that the passage opening has an opening angle of 90 ° for light passing through the light passage opening.
8. Light Transparent probe tip according to one of claims 1 to 7, characterized in that the light-conducting body is frustoconical and providing a frusto-conical surface in which at least one passage opening is provided through the light absorbing layer.
9. Light Transparent probe tip according to claim 8, characterized in that the passage opening is arranged centrally in the frustoconical surface.
10. Transparent light probe tip according to one of claims 1 to 7, characterized in that the light-conducting body semicircular or semi-formed arc-shaped, and that the light-absorbing layer having centrally to the semi-circular or semi-arc form at least one passage opening.
11. Transparent light probe tip according to claim 10, characterized in that the curvature of the semi-circular or semi-arc shape is flat at least in the region of the passage opening.
12. Transparent light probe tip according to one of claims 1 to 7, characterized in that the light-transparent body having a flat surface, and in that the light-absorbing layer provides a plurality next to each other, preferably arranged array-like passage openings.
13. Light Transparent probe tip according to one of claims 1 to 12, characterized in that the light transparent body is fixed to a flexible bending beam and thus reflects as an AFM topography of the surface.
14. Transparent light probe tip according to one of claims 1 to 13, characterized in that the light-conducting material has in front of the passage opening a larger lateral spatial extension than the clear width of the opening diameter of the through opening.
15. A process for the preparation of a light transparent probe tip according to one of claims 1 to 14, characterized by the following process steps:
Forming a spatial shape of the light guiding body determined shape,
Depositing a light absorbing layer on the mold surface,
Introducing through-holes in the deposited on the mold surface, light absorbing layer,
Filling the mold with solidifying to a light-conducting body material
and
Isolating the solidified light guiding body with the light absorbing layer from the mold.
16. The method according to claim 15, characterized in that the mold surface is produced by means of etching process.
17. The method of claim 15 or 16, characterized in that metal is deposited under a deposition on the mold surface with a homogeneous distribution as a light absorbing layer.
18. The method according to claim 17, characterized in that metal is applied in the course of vapor deposition or sputtering process.
19. A method according to any one of claims 15 to 18, characterized in that the introduction of the through holes by means of etching process is carried out.
20. The method according to any one of claims 15 to 19, characterized in that an intermediate layer is introduced between the light-absorbing layer and the mold surface, which is removed after the insulation of the light guiding body from the form of the light-absorbing surface.
21. The method according to claim 20, characterized in that the intermediate layer is a layer of self-assembling organic molecules, which are deposited in the manner of a mono- or multi-layer structure with a layer thickness of up to several Nanomtern on the mold surface.
22. Use of the light transparent probe tip in the scanning near-field optical microscopy or the photoresist lithography.
PCT/EP2000/004655 1999-05-21 2000-05-22 Probe tip that is transparent to light and method for producing the same WO2000072076A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE1999123444 DE19923444C2 (en) 1999-05-21 1999-05-21 A process for producing a light-transparent probe tip
DE19923444.2 1999-05-21

Publications (1)

Publication Number Publication Date
WO2000072076A1 true true WO2000072076A1 (en) 2000-11-30

Family

ID=7908811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/004655 WO2000072076A1 (en) 1999-05-21 2000-05-22 Probe tip that is transparent to light and method for producing the same

Country Status (2)

Country Link
DE (1) DE19923444C2 (en)
WO (1) WO2000072076A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010013458U1 (en) 2010-09-23 2010-12-30 Eberhard-Karls-Universität Tübingen Probe for near-field microscopy apertureless and / or Raman spectroscopy

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10303961B4 (en) * 2003-01-31 2005-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Probe for an optical near field microscope, and methods for their preparation

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
US5166520A (en) * 1991-05-13 1992-11-24 The Regents Of The University Of California Universal, microfabricated probe for scanning probe microscopes
US5288999A (en) * 1990-11-19 1994-02-22 At&T Bell Laboratories Manufacturing method including near-field optical microscopic examination of a semiconductor wafer
JPH0882633A (en) * 1994-09-13 1996-03-26 Nippon Telegr & Teleph Corp <Ntt> Near field microscope
JPH09184930A (en) * 1996-01-08 1997-07-15 Nikon Corp Noncontact type optical probe and its manufacture, and recording and reproducing device or scanning type proximity field microscope using the probe
WO1997025644A2 (en) * 1996-01-13 1997-07-17 Laser- Und Medizin-Technologie Gmbh, Berlin Near-field light source
DE19626176A1 (en) * 1996-06-29 1998-01-08 Deutsche Forsch Luft Raumfahrt Lithography exposure device and lithography process
DE19628141A1 (en) * 1996-07-12 1998-01-22 Inst Mikrotechnik Mainz Gmbh Field optical probe, and methods for their preparation
JPH1082792A (en) * 1996-09-06 1998-03-31 Kanagawa Kagaku Gijutsu Akad Probe for near field optical microscope
US5838005A (en) * 1995-05-11 1998-11-17 The Regents Of The University Of California Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like
WO1998054707A1 (en) * 1997-05-29 1998-12-03 Board Of Trustees Of The Leland Stanford Junior University Near field magneto-optical recording system employing slit illumination
US5866935A (en) * 1994-03-09 1999-02-02 Nikon Precision, Inc. Tunneling device
JPH1172607A (en) * 1997-07-08 1999-03-16 Nec Corp Aperture array with high transmittance for light
EP0944049A2 (en) * 1998-03-19 1999-09-22 Fuji Xerox Co., Ltd. Optical head, disk apparatus, method for manufacturing optical head and optical element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4917462A (en) * 1988-06-15 1990-04-17 Cornell Research Foundation, Inc. Near field scanning optical microscopy
DE69118117D1 (en) * 1990-11-19 1996-04-25 At & T Corp Optical Nahfeldabtastmikroskop and its applications

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288999A (en) * 1990-11-19 1994-02-22 At&T Bell Laboratories Manufacturing method including near-field optical microscopic examination of a semiconductor wafer
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
US5166520A (en) * 1991-05-13 1992-11-24 The Regents Of The University Of California Universal, microfabricated probe for scanning probe microscopes
US5866935A (en) * 1994-03-09 1999-02-02 Nikon Precision, Inc. Tunneling device
JPH0882633A (en) * 1994-09-13 1996-03-26 Nippon Telegr & Teleph Corp <Ntt> Near field microscope
US5838005A (en) * 1995-05-11 1998-11-17 The Regents Of The University Of California Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like
JPH09184930A (en) * 1996-01-08 1997-07-15 Nikon Corp Noncontact type optical probe and its manufacture, and recording and reproducing device or scanning type proximity field microscope using the probe
WO1997025644A2 (en) * 1996-01-13 1997-07-17 Laser- Und Medizin-Technologie Gmbh, Berlin Near-field light source
DE19626176A1 (en) * 1996-06-29 1998-01-08 Deutsche Forsch Luft Raumfahrt Lithography exposure device and lithography process
DE19628141A1 (en) * 1996-07-12 1998-01-22 Inst Mikrotechnik Mainz Gmbh Field optical probe, and methods for their preparation
JPH1082792A (en) * 1996-09-06 1998-03-31 Kanagawa Kagaku Gijutsu Akad Probe for near field optical microscope
WO1998054707A1 (en) * 1997-05-29 1998-12-03 Board Of Trustees Of The Leland Stanford Junior University Near field magneto-optical recording system employing slit illumination
JPH1172607A (en) * 1997-07-08 1999-03-16 Nec Corp Aperture array with high transmittance for light
EP0944049A2 (en) * 1998-03-19 1999-09-22 Fuji Xerox Co., Ltd. Optical head, disk apparatus, method for manufacturing optical head and optical element

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
BOISEN A ET AL: "Indirect tip fabrication for Scanning Probe Microscopy", MICROELECTRONIC ENGINEERING,NL,ELSEVIER PUBLISHERS BV., AMSTERDAM, vol. 30, no. 1, 1996, pages 579 - 582, XP004003151, ISSN: 0167-9317 *
L NOVOTNY ET AL.: "Light propagation through nanometer-sized structures: the two-dimensional-aperture scanning near-field optical microscope", JOURNAL OPTICAL SOCIETY AMERICA A, vol. 11, no. 6, June 1994 (1994-06-01), pages 1768 - 1779, XP002149854 *
MATSUMOTO T ET AL: "FABRICATION OF A FIBER PROBE WITH A NANOMETRIC PROTRUSION FOR NEAR-FIELD OPTICAL MICROSCOPY BY A NOVEL TECHNIQUE OF THREE- DIMENSIONAL NANOPHOTOLITHOGRAPHY", JOURNAL OF LIGHTWAVE TECHNOLOGY,US,IEEE. NEW YORK, vol. 14, no. 10, 1 October 1996 (1996-10-01), pages 2224 - 2230, XP000631521, ISSN: 0733-8724 *
NAYA M ET AL: "Imaging of biological samples by a collection-mode photon scanning tunneling microscope with an apertured probe", OPTICS COMMUNICATIONS,NL,NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, vol. 124, no. 1, 15 February 1996 (1996-02-15), pages 9 - 15, XP004021607, ISSN: 0030-4018 *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 07 31 July 1996 (1996-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 11 28 November 1997 (1997-11-28) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30) *
POHL D W ET AL: "NEAR-FIELD OPTICS: LIGHT FOR THE WORLD OF NANO", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 12, no. 3, 1 May 1994 (1994-05-01), pages 1441 - 1446, XP000464719, ISSN: 0734-211X *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010013458U1 (en) 2010-09-23 2010-12-30 Eberhard-Karls-Universität Tübingen Probe for near-field microscopy apertureless and / or Raman spectroscopy

Also Published As

Publication number Publication date Type
DE19923444C2 (en) 2003-01-02 grant
DE19923444A1 (en) 2000-11-30 application

Similar Documents

Publication Publication Date Title
Lindquist et al. Engineering metallic nanostructures for plasmonics and nanophotonics
US6408123B1 (en) Near-field optical probe having surface plasmon polariton waveguide and method of preparing the same as well as microscope, recording/regeneration apparatus and micro-fabrication apparatus using the same
US20060284118A1 (en) Process and apparatus for modifying a surface in a work region
US20060219676A1 (en) Fabrication of long range periodic nanostructures in transparent or semitransparent dielectrics
US5260567A (en) Cantilever unit and atomic force microscope, magnetic force microscope, reproducing apparatus and information processing apparatus using the cantilever unit
US6156215A (en) Method of forming a projection having a micro-aperture, projection formed thereby, probe having such a projection and information processor comprising such a probe
US5664036A (en) High resolution fiber optic probe for near field optical microscopy and method of making same
US5838005A (en) Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like
US5394500A (en) Fiber probe device having multiple diameters
Kim et al. Recent progress of nano-technology with NSOM
US6999657B2 (en) High density optical data storage
US5581083A (en) Method for fabricating a sensor on a probe tip used for atomic force microscopy and the like
US5485536A (en) Fiber optic probe for near field optical microscopy
US6291140B1 (en) Low-cost photoplastic cantilever
US6515898B2 (en) Memory element, method for structuring a surface, and storage device
US6104030A (en) Optical probe having tapered wave guide and scanning near-field optical microscope utilizing optical probe
US6370306B1 (en) Optical waveguide probe and its manufacturing method
US6785445B2 (en) Near field light probe, near field optical microscope, near field light lithography apparatus, and near field light storage apparatus that have the near field light probe
US6335522B1 (en) Optical probe having a refractive index micro-lens and method of manufacturing the same
Gierak Focused ion beam technology and ultimate applications
US5570441A (en) Cylindrical fiber probes and methods of making them
Langford et al. Focused ion beam micro-and nanoengineering
US5770856A (en) Near field sensor with cantilever and tip containing optical path for an evanescent wave
US6408122B1 (en) Probe for irradiating with or detecting light and method for manufacturing the same
US5480046A (en) Fiber probe fabrication having a tip with concave sidewalls

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP