WO2000068656A1 - System for non-destructive measurement of samples - Google Patents

System for non-destructive measurement of samples Download PDF

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Publication number
WO2000068656A1
WO2000068656A1 PCT/US2000/012008 US0012008W WO0068656A1 WO 2000068656 A1 WO2000068656 A1 WO 2000068656A1 US 0012008 W US0012008 W US 0012008W WO 0068656 A1 WO0068656 A1 WO 0068656A1
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WIPO (PCT)
Prior art keywords
sample
frequency
modulated
radiation
probe beam
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PCT/US2000/012008
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English (en)
French (fr)
Inventor
Shing Lee
Mehrdad Nikoonahad
Xing Chen
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Kla-Tencor Corporation
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Priority to JP2000617398A priority Critical patent/JP4579423B2/ja
Publication of WO2000068656A1 publication Critical patent/WO2000068656A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light

Definitions

  • This invention relates in general to measurement of samples and in particular, to a system for a non-destructive measurement of properties of a sample.
  • This invention is particularly useful for non-destructive measurement of dose of a dopant in a semiconductor material.
  • semiconductor manufacturing it is frequently desirable to obtain information concerning the properties of a semiconductor material in a sample such as a wafer during or after processing. For example, it may be desirable to obtain an indication of the dose of a dopant in a semiconductor material such as silicon.
  • U.S. Patent No. 4,952,063 One system for measuring dose is proposed in U.S. Patent No. 4,952,063.
  • a thermal wave is generated in a material by causing periodic localized heating of the material by focusing an intensity modulated pump beam of light on a spot of the sample surface.
  • a probe beam is directed towards the spot of the sample surface to sense changes in the indices of refraction induced by the pump beam.
  • the output of the detector is processed to analyze reflected light signals that are in phase with the modulation of the pump beam in order to detect changes in reflectivity of the sample. Such reflectivity measurements are then used to determine dopant concentration, residue deposits and defects of samples.
  • the change in reflectivity measured may correspond to different values of the dopant concentration so that the dopant concentration cannot be uniquely identified from the change in reflectivity.
  • the change in reflectivity may also be too small to be measured for some dopant concentrations.
  • Spectroscopic ellipsometry is used to measure the damage profile at high doses. For wafers implanted at low doses, spectroscopic ellipsometry may not be adequate.
  • a pump beam of radiation when a pump beam of radiation is supplied to a sample, energy of the beam is absorbed by the sample, thereby causing the physical properties of the sample to change.
  • the change in the physical properties of the sample causes changes in the ellipsometric parameters of the sample.
  • the pump beam is modulated at a first modulation frequency. Physical properties of the sample are thus also modulated at the first frequency.
  • a polarized probe beam is supplied to the sample and modified by the sample to provide a modified beam. Where the pump beam is modulated at the first frequency, the probe beam is also caused by the sample to be modulated at such frequency.
  • a polarization state of radiation in the probe beam is modulated at a second frequency before detection.
  • the modified beam is detected to provide an output.
  • the output is processed to provide information or indication related to a signal at a frequency substantially equal to the difference between the first and the second frequencies or the harmonics thereof in any combination.
  • a change in one or more ellipsometric parameters is derived from such information or indication. Such change is a measure of the physical properties of the sample.
  • the instrument includes a device for measuring dose of a dopant in the wafer and a second device for measuring film thickness and/or index of refraction information of the wafer.
  • FIG. 1 is a schematic view of an ellipsometer for measuring the change in the structure of a semiconductor material in the sample, such as that caused by dopants, and of a spectroscopic ellipsometer (shown in dotted lines) to illustrate an embodiment of the invention.
  • Fig. 2 is a block diagram of a signal processing flow diagram to illustrate the operation of the dose measurement of Fig. 1.
  • Figs. 3-6 are graphical plots of the change in ellipsometric parameters and change in reflectivity as functions of dose of dopants in the sample to illustrate the invention.
  • Fig. 7 is a schematic view of an ellipsometer employing a probe beam of multiple wavelengths for measuring the change in the structure of a semiconductor material in the sample, such as that caused by dopants, to illustrate the preferred embodiment of the invention.
  • Fig. 8 is a block diagram of a combined instrument for measuring dose of dopants and for measuring other physical properties of the sample to illustrate the invention.
  • identical components are identified by the same numerals in this application.
  • Fig. 1 is a schematic view of an ellipsometer for measuring physical properties of a sample such as a semiconductor wafer non-destructively to illustrate the preferred embodiment of the invention.
  • system 10 includes a first source for generating a pump beam.
  • the pump beam generated by the source is absorbed by an area of the wafer, the temperature of the area is increased, and the increase in surface temperature alters the complex index of refraction of the surface.
  • the wafer has been doped with a dopant, such as through an implantation process, the heat dissipation characteristics of the wafer at the surface area depend on the dose and the implant profile in the damaged layers in the wafer.
  • Such heat dissipation characteristics determine the change in temperature of the wafer surface and the change in the complex index of refraction of the surface.
  • the above effects are described more thoroughly in "A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors," S. Sumie et al., Jpn. J. Appl. Phys. Vol. 31 (1992), pp. 3575-3583.
  • the change in the complex index of refraction results in changes in the ellipsometric parameters of a sample 12.
  • System 10 provides a probe beam for interrogating such changes.
  • the pump beam 16 is generated by means of an infrared laser 14. Beam 16 is modulated by means of an acousto-optic modulator 18 at a frequency ⁇ ⁇ .
  • the first order modulated beam from laser 14 is reflected by mirror 20 and focused by lens 22 into pump beam 24 towards a spot 12a of sample 12 which may be a semiconductor wafer.
  • absorption of the energy from pump beam 24 will cause the index of refraction at spot 12a of the sample to change. This, in turn, will result in change in ellipsometric parameters of sample 12 at spot 12a.
  • the change in the ellipsometric parameters would indicate physical properties of sample 12 such as the dose of dopants (e.g.
  • the ellipsometric parameters of the sample are influenced by the alteration in the structure in sample 12.
  • sample 12 is a doped semiconductor wafer
  • the change in ellipsometric parameters indicate the alteration in the crystal structure of the semiconductor material resulting from introduction of a foreign material in the structure.
  • the measure of the degree of alteration in the structure of the sample will indicate indirectly the concentration of dopants.
  • the doping is performed by ion implantation, such change will indicate the implant dose in the sample.
  • the pump beam modulated at frequency ⁇ a physical properties of the sample and consequently the ellipsometric parameters are also caused to be modulated at such frequency.
  • the probe beam will therefore also be modulated by the sample at this frequency ⁇ ⁇ .
  • Pump beam 24 may be a continuous beam or may consist of a sequence of pump pulses. Where pump beam 24 is continuous, modulator 18 modulates the intensity of the beam at frequency ⁇ ⁇ . Where pump beam comprises a continuous stream of pump pulses, modulator 18 may modulate the stream at frequency ⁇ c in two different ways.
  • the continuous stream of pulses in beam 16 may be modulated so that a number of the pulses are passed as a burst, where such pump pulse bursts are sent at intervals at frequency ⁇ ⁇ .
  • the pump beam 24 may be modulated to comprise a continuous stream of pump pulses whose intensities are modulated at frequency ⁇ a . In any event, in the frequency domain, both methods of modulation introduce the same modulation frequency components.
  • the thermal wavelength ⁇ is a measure of heat penetration of a thermal wave caused by the pump beam.
  • the wavelength ⁇ is inversely related to the square root of the modulation frequency ⁇ a according to the equation below:
  • the modulation frequency ⁇ ⁇ determines the depth of penetration of the thermal wave caused by the pump beam 24. Therefore, by varying the modulation frequency ⁇ Q , the depth for profiling the sample structure of sample 12 may be varied and selected.
  • the zeroth order beam that passes through modulator 18 is collected in a beam dump 26.
  • the index of refraction of the sample material at such spot is also varied at this frequency, and hence the ellipsometric parameters of the sample are affected also according to this frequency.
  • the change in ellipsometric parameters are interrogated by means of a probe beam which is supplied by a laser 42.
  • a beam from laser 42 is passed through a linear polarizer 44 and modulated by a photo-elastic modulator (PEM) 46 at frequency ⁇ m and focused by lens 48 as a probe beam 50 preferably to spot 12a of the sample.
  • PEM photo-elastic modulator
  • Radiation from probe beam 50 reflected by sample 12 is collected by a collecting lens 62 and passed through an analyzer 64 and passed through a band pass filter 66 to detector 68.
  • Filter 66 substantially passes radiation of wavelength at or near the wavelength of probe laser 42 to block radiation in the infrared range from pump laser 14 and to improve signal-to-noise ratio.
  • the output of detector 68 is applied to three filters 72, 74, 76. The outputs of the three filters are supplied to a central processing unit 80 for processing.
  • Fig. 1 it is assumed that radiation reflected from sample 12 is detected. It will be understood, however, that where sample 12 transmits light, the light transmitted through sample 12 may be detected instead by detector 68. Such and other variations are within the scope of the invention.
  • This invention is based on the observation that detection sensitivity can be much improved by detecting a difference frequency between the two modulation frequencies ⁇ fl and ⁇ m or between any harmonics of the two frequencies in any combination.
  • the technique illustrated in Fig. 1 provides adequate independent information for detecting such change and for deriving from such change the dose of dopants in sample 12.
  • filter 72 passes the direct current (DC) component of the output of detector 68
  • filter 74 has a bandwidth such that it passes substantially only the signal component of frequency ⁇ m - ⁇ a and band pass filter 76 passes substantially only the signal component at frequency 2 ⁇ m - ⁇ ⁇ of the output.
  • the output of filter 72 is therefore I DC .
  • the outputs of filters 74 and 76 are respectively / and I- . m a m a
  • the pump laser beam 24 modulates the surface temperature of the wafer, which, in turn, changes the complex refractive index and the reflection coefficients r s , r p of s- and p- polarization of the wafer surface:
  • ⁇ and ⁇ are modulation indices which are proportional to the modulated pump intensity.
  • the quantities ⁇ tan ⁇ and ⁇ are Fourier coefficients of the changes at frequency ⁇ a in the ellipsometric parameters of the sample caused by the pump beam. Any fluctuations in the absorbed power by the sample other than those due to the modulation by modulator 18 will cause m p , m s of the equations (4) to change. Thus, it is assumed for the purpose of the equations (4) that the absorbed power is modulated only by modulator 18; it being understood that the undesirable effects of at least some of the other factors that cause variations in absorbed power can be removed by calibration, such as the effects of variations in the intensity of the pump beam, in a manner known to those skilled in the art and will not elaborated here. Detector signal components at DC, ⁇ ⁇ , ⁇ m - ⁇ ⁇ and 2 ⁇ m - ⁇ ⁇ become: (5)
  • I DC -F( ⁇ + tan 2 ⁇ ) 4
  • F is the system's response function.
  • the pump induced changes in the ellipsometric parameters can be expressed in terms of normalized signals:
  • the change in the two ellipsometric parameters ⁇ tan ⁇ and ⁇ may be obtained from the outputs of filters 72, 74 and 76.
  • a lookup table may be compiled correlating the changes in the ellipsometric parameters with the known doses of the ion implants, for each specific type of dopant.
  • Fig. 2 is a signal processing flow chart.
  • the output of detector 68 is passed through three filters placed in parallel, whose outputs are applied to processor 80.
  • Processor 80 performs the above calculations on the outputs of the three filters to obtain ⁇ tan ⁇ and ⁇ as illustrated in Fig. 2.
  • Fig. 3 is a graphical plot of the change in tan ⁇ and ⁇ as a function of dose to illustrate the invention. As noted in Fig. 3, the same change in tan ⁇ or ⁇ may correspond to more than one value of dose. However, by measuring both the change in ⁇ and the change in tan ⁇ , it is possible to determine a single value for the dose.
  • Fig. 3 illustrates the changes in tan ⁇ and ⁇ where sample 12 is implanted with phosphorus at 40 keV. Shown also in Fig. 3 is the change in reflectivity R of sample 12 as a function of dose.
  • Fig. 3 is a graphical plot of the change in tan ⁇ and ⁇ as a function of dose to illustrate the invention. As noted in Fig. 3, the same change in tan ⁇ or ⁇ may correspond to more than one value of dose. However, by measuring both the change in ⁇ and the change in tan ⁇ , it is possible to determine a single value for the dose.
  • Fig. 3 illustrates
  • FIG. 4 is a graphical plot of the change in tan ⁇ and, ⁇ and reflectivity R as a function of dose where the dopant is arsenic implanted at 100 keV.
  • the change ⁇ R in reflectivity for arsenic is a multi-valued function around 5x 10 13 /cm 2 , so that the same change in reflectivity may correspond to two different values of dose.
  • Fig. 4 clearly illustrates that by measuring only the change in reflectivity as in U.S. Patent No. 4,952,063, in certain ranges of dose, there may be more than one value of dose corresponding to a value of change in reflectivity, so that the value of the dose cannot be uniquely identified by measuring the change in reflectivity.
  • Fig. 5 illustrates the changes in tan ⁇ , ⁇ and reflectivity R where the dopant is boron fluoride at 60 keV.
  • Fig. 6 illustrates the changes in tan ⁇ , ⁇ and reflectivity R where the dopant is boron at 100 keV.
  • one or more of the filters 72, 74 and 76 may be omitted and still useful information may be obtained to indicate dose of the dopant.
  • a single filter 74 or 76 may be adequate for some applications for determining the dose of the dopant.
  • the difference between harmonics of a first and a second frequency would include the difference between any multiple of the first frequency and any multiple of the second frequency, where one times the first or the second frequency is a multiple of such frequency.
  • the depth beyond the surface of the sample 12 that is penetrated by the thermal wave caused by the pump beam 24 depends upon the thermal wavelength which, in turn, depends upon the modulation frequency introduced by modulator 18. Therefore, the depth for profiling the structure, such as the doped structure of a semiconductor material, may be varied by varying the modulation frequency ⁇ fl introduced by modulator 18.
  • the probe beam 50 includes radiation components of multiple wavelengths, measurements at the frequencies of these components in the manner described above will yield different values for the changes in ellipsometric parameters from which dose and depth profile of the dopant can be derived.
  • laser 42 is replaced by a radiation source supplying radiation at multiple wavelengths, such as a broadband source in the form of a xenon arc lamp, for example.
  • a broadband system 100 is shown in Fig. 7. As shown in Fig. 7, as in Fig.
  • a pump laser beam 24 modulated at frequency ⁇ fl is supplied to surface area 12a of sample 12 as in Fig. 1.
  • a white light source such as xenon lamp 142 is used. Radiation of source 142 is focused by mirror 144, polarized by polarizer 44 and modulated by means of PEM 46 at frequency ⁇ m and directed to preferably surface area 12a. As described above, the portion of sample 12 at or near surface area 12a is thermally affected by the pump beam 24 so that physical properties of such portion of the wafer is also modulated at frequency ⁇ ⁇ .
  • detector 160 may comprise a spectrometer which includes a diffraction element such as a prism or grating 162 and an array of detectors 164.
  • detector 160 may include a monochromator to select a wavelength component that is passed to a detector for detecting the intensity of such component.
  • the output(s) of the detector or the array of detectors are then supplied to filters such as filters 72-76 of Fig. 1 and the filtered signals are then supplied to a processor for processing.
  • the filters and the processor are omitted from Fig.
  • the changes in the ellipsometric parameters ⁇ tan ⁇ and ⁇ may be derived at each wavelength of the wavelength components that are being detected by detector 160.
  • either the polarizer 44 or the analyzer 64 is rotated during the measurement.
  • the probe beam 150 is focused by mirror 144 before it is polarized by fixed polarizer 44. It may be preferable to reverse the order of the two elements so that the probe beam 150 is first polarized by polarizer 44 and modulated by PEM 46 before it is focused by mirror 144 to area 12a of the sample.
  • the dose of the dopant and depth profile of the dopant may be computed.
  • a broadband light source such as a xenon lamp 102 supplies a broadband radiation beam 104 which is polarized by a polarizer (not shown) and then focused by mirror 106 to spot 12a.
  • the beam 104 is focused to spot 12a when the pump beam 24 is not supplied to the same spot.
  • the radiation from beam 104 reflected by sample 12 is passed through an analyzer (not shown), collected and/or focused by mirrors 110 and 112 and applied to a spectrometer 114.
  • the polarizer or analyzer is rotated during the measurement.
  • the polarizer and analyzer normally employed in ellipsometers have been omitted in Fig. 1. From the output of spectrometer 114, the thickness(es) and the indices of refraction of one or more layers on sample 12 may be determined by means of a processor (not shown).
  • the user would perform measurements of the thickness(es) and/or indices of refraction using system 100 before or after the dose measurement using system 10 as described above.
  • a spectroscopic ellipsometer 100 as described above in conjunction with system 10 as shown in Fig. 1
  • a refiectometer, polarimeter, or single wavelength ellipsometer may be used instead in conjunction with system 10 to perform the same measurement.
  • FIG. 7 A more general configuration is illustrated conceptually in Fig. 7.
  • system 10' and the additional measurement instrument 100' together would form a combined instrument for measuring the dose and dose profile of dopants and of thickness(es) and/or indices of refraction of one or more layers of the same sample 12.
  • System 10' of Fig. 7 may be the same as system 10 of Fig. 1.
  • a probe beam which can be polarized or unpolarized, is then applied to the same spot of the sample that is heated by the pump beam and the reflected or transmitted probe beam from the sample is then detected by a photodetector, also analogous to system 10 of Fig. 1.
  • a photodetector also analogous to system 10 of Fig. 1.
  • the technique in U.S. Patent No. 4,952,063 employs a processor for analyzing intensity variations of such reflected or transmitted probe beam where such variations are in phase with the periodic changes of the pump beam to indicate the presence of residues, defects as well as levels of ion dopants concentrations in semiconductors.
  • the detector signal output is filtered by means of three filters 72, 74 and 76 and the outputs of the filters are then processed by processor 80.
  • Filters 74 and 76 may be implemented by means of lock-in amplifiers locking in at difference frequencies ⁇ m - ⁇ fl and 2 ⁇ m - ⁇ fl , respectively.
  • processor 80 may then digitize the outputs of detector 68 and provide the digitized signals to processor 80 where processor 80 derives information or indication related to the intensity or amplitudes of signals at frequencies ⁇ m - ⁇ a and 2 ⁇ m - ⁇ 0 .
  • This alternative may also have the advantage that the differences between more harmonics of the two frequencies present in the detector output may be processed and calculated for determining the dose and dose profile of the sample. Such and other variations are within the scope of the invention.
PCT/US2000/012008 1999-05-11 2000-05-03 System for non-destructive measurement of samples WO2000068656A1 (en)

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