WO2000059029A2 - Method and apparatus for enabling conventional wire bonding to copper-based bond pad features - Google Patents

Method and apparatus for enabling conventional wire bonding to copper-based bond pad features Download PDF

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Publication number
WO2000059029A2
WO2000059029A2 PCT/US2000/005787 US0005787W WO0059029A2 WO 2000059029 A2 WO2000059029 A2 WO 2000059029A2 US 0005787 W US0005787 W US 0005787W WO 0059029 A2 WO0059029 A2 WO 0059029A2
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WO
WIPO (PCT)
Prior art keywords
brush
layer
wafer
oxide
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/005787
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English (en)
French (fr)
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WO2000059029A3 (en
Inventor
Hugh Li
Diane J. Hymes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to EP00917749A priority Critical patent/EP1186022A2/en
Priority to JP2000608434A priority patent/JP2002540631A/ja
Priority to AU38677/00A priority patent/AU3867700A/en
Publication of WO2000059029A2 publication Critical patent/WO2000059029A2/en
Publication of WO2000059029A3 publication Critical patent/WO2000059029A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01971—Cleaning, e.g. oxide removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the field of invention relates to thin film processing and, more
  • circuits employing copper based metallization technology employing copper based metallization technology.
  • region is typically used to electrically interconnect various devices within an
  • One particular problem area concerns bonding pads used for
  • I/O input /output
  • capillary 101a threaded with a (typically Gold (Au) or Al) wire 104a having a ball
  • thermosonic or thermocompressive energy is applied at the
  • capillary tip 105b to adhere the ball 102b to the bond pad 103b. As shown in
  • capillary 101c moves to a package lead 106 where the wire 104d is subsequently
  • the native oxide prevents a bond from
  • the native oxide is formed prior to the application of the ball
  • the metal layer is polished (e.g., by a Chemical
  • CMP Chemical Mechanical Polish
  • the semiconductor wafer After polishing, the semiconductor wafer is cleaned to remove unwanted
  • cleaning may be removed by the cleaning process depending on the cleaning
  • the semiconductor wafers are dried, tested and
  • one approach is to plasma etch and then deposit a
  • a method and apparatus are described for removing an oxide from a
  • the surface may be a copper surface
  • a sokition comprising citric acid or hydrochloric acid.
  • Applying the passivation layer may further comprise applying a solution
  • the method may also further comprise completely
  • Figures 1A thru ID show a typical wire bonding process.
  • Figure 2 shows an example of a brush scrubbing system.
  • Figure 3 shows an example of a brush used within the brush scrubbing
  • Figures 4A thru 4E show a method for forming a wire bond to a copper
  • the processing of wafers includes removing an oxide
  • the oxide may be any suitable surface (e.g., a copper surface, a bonding pad surface, etc.).
  • the oxide may be
  • the passivation layer may be applied by applying a solution to the
  • the solution is a member of the azole family (e.g., BTA, etc.).
  • the solution is a member of the azole family (e.g., BTA, etc.).
  • the passivation layer is applied within 5 seconds of the oxide
  • the application of the passivation layer is performed
  • a brush by the use of a brush and a liquid (e.g., a wet chemistry) supplied to a brush.
  • a liquid e.g., a wet chemistry
  • the liquid reacts with the wafer surface to form the layer.
  • the brush may be part of a wafer processing system that is
  • magneto optical based processes similarly involve transition metals (such as Iron,
  • wire bonds for example: flip chip technologies as well as ball grid arrays and
  • the bond pads are typically formed after the final layer of interconnect
  • FIG. 2 shows an exemplary brush scrubber (also
  • the scrubber includes a number of stations. Each of
  • these stations typically represents one or more steps in the wafer cleaning
  • Contaminated wafers are loaded at one end of the
  • contaminated substrates are loaded into a wafer cassette 280 and
  • cassette 280 is then placed into the wet send index station 210.
  • the substrates are automatically removed from the cassette 280 and placed, one at a time, into the
  • a substrate is processed through a first
  • the substrate is treated with a solution (such as ammonium
  • the substrate itself may rotate
  • the scrubbed substrate is then automatically removed from the outside
  • the substrate is processed through a
  • the sokition is applied to the substrate through brushes 231.
  • the substrate is
  • An exemplary brushing apparatus 300 used for scrubbing wafers as well
  • a solution is typically a
  • the embodiment of Figure 3 may supply liquids through supply lines 310 and 320.
  • liquids may be applied sequentially, that is, one at a time; or in the
  • Delivery tube 370 delivers the solution into the hollow core 330 of the brush
  • the supply lines 310 and 320 are therefore in
  • the native oxide 401 is first removed from the bond pad 402
  • the passivation layer is
  • the passivation layer also does not significantly interfere with the integrity of the
  • passivation layer is therefore a barrier to native oxide formation
  • passivation layer has enough thickness and density to adequately prevent the
  • the passivation layer is
  • the thickness and density have a first bound determined by oxide growth
  • passivation layers are different from adhesion and /or
  • a form of adhesion layer is the aforementioned metal film (such as
  • Ni/Au or Ni/Pd Ni/Au or Ni/Pd
  • Adhesion layers are a transition layer between the copper bond pad and the wire
  • wafer is typically further subjected to cleaning, drying, testing, dicing and
  • the native oxide may be removed and the passivation layer applied anywhere
  • the wafer may be subjected to an oxide removal step followed by a passivation layer application
  • the passivation layer should be
  • the native oxide may be removed in an oxygen free and /or
  • application of the passivation layer may be performed in any of a number of
  • brush scrubbing systems are traditionally used for cleaning wafers.
  • the passivation layer e.g., the passivation layer
  • wet chemistry processes such as sprays or baths
  • the wafers may be reinserted into the wafer input cassette 280 (referring briefly
  • Integrated systems may or may not prohibit reuse of the wafer brush
  • the native oxide must be removed before the passivation layer is applied.
  • the native oxide may be removed by a number of different solution chemistries.
  • an acid or other solution is diluted in DI water.
  • DI water usually, an acid or other solution is diluted in DI water.
  • citric acid for example citric acid
  • water may all be used where all concentration levels are by weight.
  • each of these concentration levels may be varied depending on, for example
  • the thickness of the oxide to be removed or the desired processing time is the thickness of the oxide to be removed or the desired processing time.
  • the process time and solution flow rates may be typical values currently
  • This guideline also extends to the above described acidic concentration levels. That is,
  • Oxide removal dependence may be anywhere from room temperature to 50°C. Oxide removal dependence
  • temperatLire on temperatLire is generally: the higher the temperature, the greater the rate of
  • the passivation layer is applied.
  • oxides begin to
  • transport time achievable should be employed. As a rule of thumb, the transport time should consume 5 seconds or less. However, as discussed ahead, this time
  • period may be extended depending on the amount of etchant left on the surface.
  • the wafer moves horizontally from the first (i.e.,
  • brLishing station 230 (referring briefly back to Figure 2) on hardware
  • the wafer surface is perpendicular to the direction of
  • the oxide removal solution would be wiped off of the wafer, especially if the
  • the copper bond pads would be exposed to free air resulting in
  • the passivation layer should be applied as soon as possible or practicable
  • the passivation layer should be applied
  • passivation layer solution may be both applied within the first scrubbing station.
  • the oxide removal solution is first applied with a first station brush
  • the layer may also be referred to as a film.
  • solution chemistry is generally comprised of members of the azole family.
  • Azoles such as Benzotriazole (BTA) are known to provide protection against the
  • passivating agent for Copper is the major component of many commercially
  • copper oxide prevention include Indazole, Benzimidazole, Indole and Methyl
  • PCB PC board
  • OSPs Organic Solderability Preservatives
  • BTA and other azoles form a protective layer according to a chemical
  • Particulates are any matter in a
  • the thickness of the passivation layer may have a minimum
  • bonding parameters (such as frequency or time) needed to form acceptable
  • bonds may vary depending on the bond tool manufacturer as well as the
  • bonding energy may be needed as passivation layer thickness (or thickness
  • thickness may depend on the specific bonding tool employed.
  • BTA passivation layer success is related to
  • thin films of dense (i.e. low porosity) BTA are desirable.
  • Film porosity is related
  • BTA film density is related to the concentration level
  • uniformity of the BTA coverage about the target BTA film thickness (less than or
  • the brush affects uniformity. For example, flat brushes result in better global and
  • a passivation application process implemented with:
  • passivation layer thickness is met since it is thick enough to prevent oxide
  • passivation layer do not necessarily require a brush scrubbing apparatus.
  • the oxide layer may be removed by an immersion (e.g., one immersion
  • Baths involve completely immersing the wafer in an oxide etchant
  • Processing parameters include time, concentration, temperature and
  • wafer is dipped into is generally the same as that used with the scrubber system.
  • the time may range from seconds to minutes depending on the concentration of
  • the oxide may be removed by an acid spray.
  • Sprays involve spraying the wafer with an etchant solution.
  • parameters associated with spraying include: volumetric flow rate of the
  • the passivation layer may be applied by processes other than a brush
  • scrubbing as well. These include, among others: immersion (such as baths),
  • passivation layer should be applied as quickly after the oxide is removed as
  • passivation layer is applied should similarly expand the allowable time margin

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PCT/US2000/005787 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features Ceased WO2000059029A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00917749A EP1186022A2 (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features
JP2000608434A JP2002540631A (ja) 1999-03-31 2000-03-06 銅を用いたボンディングパッド構造に対する従来型のワイヤボンディングの適用を可能にする方法および装置
AU38677/00A AU3867700A (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bondpad features

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/282,596 US6358847B1 (en) 1999-03-31 1999-03-31 Method for enabling conventional wire bonding to copper-based bond pad features
US09/282,596 1999-03-31

Publications (2)

Publication Number Publication Date
WO2000059029A2 true WO2000059029A2 (en) 2000-10-05
WO2000059029A3 WO2000059029A3 (en) 2001-02-15

Family

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PCT/US2000/005787 Ceased WO2000059029A2 (en) 1999-03-31 2000-03-06 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features

Country Status (7)

Country Link
US (2) US6358847B1 (https=)
EP (1) EP1186022A2 (https=)
JP (1) JP2002540631A (https=)
KR (2) KR100731851B1 (https=)
AU (1) AU3867700A (https=)
TW (1) TW454281B (https=)
WO (1) WO2000059029A2 (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1104020A1 (en) * 1999-11-29 2001-05-30 Applied Materials, Inc. Methods of treating substrates surfaces comprising copper or copper alloy
DE10064691A1 (de) * 2000-12-22 2002-07-04 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung
GB2362510B (en) * 1999-12-20 2003-07-02 Lucent Technologies Inc Wire bonding method for copper interconnects in semiconductor devices
WO2002073687A3 (en) * 2001-03-12 2003-11-13 Motorola Inc Method of removing oxide from copper bond pads
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US7170172B2 (en) 2001-12-13 2007-01-30 Nec Electronics Corporation Semiconductor device having a roughened surface
DE102005034485A1 (de) * 2005-07-20 2007-02-01 Infineon Technologies Ag Verbindungselement für ein Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102005033469A1 (de) * 2005-07-18 2007-02-01 Infineon Technologies Ag Halbleitersubstrat, Verfahren zu dessen Herstellung sowie Verfahren zum Herstellen eines Schaltungsmoduls
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US7504018B2 (en) 2005-10-31 2009-03-17 Applied Materials, Inc. Electrochemical method for Ecmp polishing pad conditioning

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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EP1186022A2 (en) 2002-03-13
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TW454281B (en) 2001-09-11
US20020058417A1 (en) 2002-05-16
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AU3867700A (en) 2000-10-16

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