WO2000057158A1 - Method and apparatus for measuring internal transmittance - Google Patents
Method and apparatus for measuring internal transmittance Download PDFInfo
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- WO2000057158A1 WO2000057158A1 PCT/US2000/007670 US0007670W WO0057158A1 WO 2000057158 A1 WO2000057158 A1 WO 2000057158A1 US 0007670 W US0007670 W US 0007670W WO 0057158 A1 WO0057158 A1 WO 0057158A1
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- transmission standard
- wedge
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
- G01N21/53—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke
- G01N21/534—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke by measuring transmission alone, i.e. determining opacity
Definitions
- the present invention relates to property measurements of low loss optical materials. More particularly, the present invention relates to measuring the internal transmittance of low loss optical materials. Particularly the invention relates to measuring the below 300 nm wavelength transmission properties of low loss, microlithography optical materials such as silica glasses and fluoride crystals, and preferably the below 200 nm wavelength transmission properties such as at 193 nm and 157 nm.
- the invention includes a below 300nm transmission standard optical material device for calibration of transmission at below 300nm wavelengths.
- Low loss optical materials require precise and accurate evaluation of optical losses. These low loss optical materials include, but are not limited to, high purity fused silica, which is used for applications such as microlithography imaging lenses.
- One important measurement is the transmittance (optical power in/ optical power out) of an optical material such as microlithography silica glasses and microlithography fluoride crystals such as calcium fluoride.
- an optical lithography material (glass or crystal) used in the illuminating system or projection lens of a photolithographic stepper system to have an internal transmittance of 0.99 cm "1 or higher at the microlithography wavelength.
- One known method measures transmittance through opposed, parallel surfaces of a single sample.
- a second known method measures transmittance of at least two such samples, each sample differing in pathlength.
- An unconventional third method uses a prism-shaped sample to provide a means of measuring transmittance as function of pathlength. In the second and third methods, the exponential slope of transmittance vs. pathlength provides the attenuation coefficient of the bulk sample, from which internal transmittance is calculated.
- the first method requires that surface losses (reflectance, scatter, absorption) and all optical system uncertainties be quantified in order to determine the bulk (internal) transmittance. Alternatively, comparison can be made to a known reference sample of the same material and geometry, or in certain cases, surface reflection and scatter can be eliminated by measurement of the sample immersed in an index-matching fluid.
- the second method with at least two samples requires that surface losses and optical system uncertainties remain constant for each sample.
- the third method requires only that the two surfaces remain constant throughout the test period.
- the first two methods provide a measurement accuracy of no better than about +/- 0.1 % Transmittance/cm (T/cm), or 0.004 dB/cm.
- T/cm Transmittance/cm
- the accuracy provided by the first and second methods is no better than about 0.5% T/cm, or 0.02 dB/cm.
- Surface loss at the level of 0.1 % T to 0.2% T is variable over time, and from sample to sample. Other sources of optical system uncertainties (power response) are dependent on sample geometry and pathlength.
- the third method has not been demonstrated by prior art in the below 300 nm microlithography uv ranges.
- the present invention generally provides an improved apparatus and method for accurate measurement of below 300 nm internal transmittance of non- parallel sided prism-shaped optical lithography materials.
- the inventive method includes generating accurate transmittance standards for improving measurement accuracy of microlithography optical materials and microlithography optical elements thereof. Aspects of the invention include improved measurement apparatuses and measurements therewith of optical microlithography materials.
- a non-parallel sided prism shaped wedge is translated relative to a below 300 nm light source to provide at least two different transmission path lengths.
- the method and apparatus does not utilize translation of mirror elements and inhibits the movement of reflective mirror optical elements and active moving of the beam.
- the below 300 nm measurement light travels only in one-way through the material sample and two-way travel of the below 300 nm light through the material is avoided.
- the measurement beam transmits through the sample only once in a one-way transmit direction as opposed to being transmitted through the sample in a two-way direction with the light reflected back through by a mirror element in the second opposing direction.
- a below 300 nm pulsed laser with pulse by pulse reference compensation is utilized as the light source.
- the apparatus and method provide optimized measurements in the below 300 nm optical microlithography deep-uv wavelength ranges and provide accurately measured and selected microlithography optical materials and elements thereof.
- the preferred below 300 nm optical lithography material standard sample is an optically polished and cleaned non-parallel sided prism-shaped wedge with an apex angle equal to the angle of minimum deviation, with triangular non-parallel side dimensions sufficiently long to give the desired pathlength difference, and with a length between parallel ends (end faces that are in a plane normal to the triangular non-parallel sides) equal to approximately the length of the typical average microlithography optical material element or blank to be measured and utilized in the intended below 300 nm optical microlithography system.
- a transmittance below 300 nm lithography standard wedge made of Corning Incorporated HPFSTM type high purity fused silica glass for 193 nm optical microlithography would have an apex angle of about 65.24 degrees, triangular sides in the range of 1-6 cm, and a length between parallel ends in the range of 1-20 cm. Surface roughness is polished to be 5 angstroms rms, or better, for best accuracy.
- a polarized below 300 nm light pulsed beam incident on the side of the prism- shaped wedge at the brewster angle is transmitted through the prism shape parallel to the base at various locations (a, b, c) by prism or source translation in a plane defined by the prism apex and base to yield transmittance vs. pathlength (pathlength a, b, c).
- pathlength a, b, c This set of measurements is repeated along the length of the prism (A, B, C, D, E, F) (to account for optical material inhomogeneity).
- the average attenuation coefficient (the slope of transmittance vs. pathlength) of all the coefficients at each measurement plane (A, B, C, D, E, F) along the length of the prism-shaped wedge is equal to the attenuation coefficient of a beam transmitted the full length of the prism-shaped wedge.
- the transmittance of the prism-shaped wedge is measured through the parallel faces such as with a spectrophotometer, to ascertain measurement error. Care is exercised in providing similarly polished and cleaned surfaces for both the prism-shaped standard and the typical average microlithography optical material element blank.
- Use of two, or more, different length prism-shaped wedge standards in this fashion preferably provides better compensation of surface effects, and a more accurate calibration of the spectrophotometer.
- the invention includes a set of wedge transmission standards with a variety of length useful for calibration of a spectophotometer.
- Fig. 1 depicts a schematic of an apparatus for measuring the internal transmittance of a sample according to an embodiment of the present invention.
- Fig. 3a is a schematic of how a prism-shaped standard wedge would be configured and measured.
- Fig. 3b is a plot of the internal transmittance along the prism length, with a line showing the average internal transmittance.
- Fig. 3c illustrates a method of the invention.
- Fig. 3d illustrates a method of the invention.
- the invention resides in a method and apparatus for microlithography capable of providing at least an order of magnitude better precision and accuracy than prior art methods of measuring internal transmittance in the below 300 nm microlithography wavelength regions, and use of such method and apparatus to generate accurate transmittance standards for optical spectrophotometry and microlithography use.
- This invention provides improved accuracy and precision and employs a prism-shaped sample wedge to make possible measurement of multiple pathlengths (lengths a, b, c) within a single sample.
- the prism-shaped wedge comprises an optical material sample which provides a reasonable difference in the pathlength from top (apex) to bottom (base) of the sample, for example, at least about 5-10 degrees wedge is required for 6 cm sample.
- apex angle equal to the minimum deviation angle is best, as it precludes the need to realign the sample at each measurement location to prevent displacement of the beam on the detector.
- measuring transmittance involves only two surfaces of a single sample, which minimizes error due to surface inconsistency inherent in methods with multiple samples due to polishing and cleaning.
- Another advantage of the present invention is that transmittance as a function of pathlength can be obtained quickly by simple translation of the sample across the measurement light beam. This reduces errors due to time variance in surface losses, instrument system drift, and multiple sample alignments.
- Another advantage of the invention is that below 300 nm transmission is through the sample in only one direction. Such one-way beam transmission reduces error caused by necessary small displacement of a two-way measurement beam on reflection in a double-pass arrangement.
- Another advantage of the invention includes utilizing a below 300 nm pulsed laser light source and reference compensation using high-speed software and electronics and a beamsplitter which allows even within pulse compensation of a pulsed laser source.
- the present invention provides an economical cost effective below 300 nm transmission measurement requiring less material and less sample preparation than multiple sample, multiple path length techniques. Enhanced precision of the exponential fit of -LnT versus sample thickness, and information on short range very local inhomogenieties, is accomplished, simply, by translation in finer increments.
- a preferred embodiment of the present invention uses a polarized, collimated below 300 nm measurement beam incident on the sample at Brewster's angle.
- the light source is a pulsed laser.
- the collimated beam minimizes pathlength dependent systematic error.
- the below 300 nm polarized beam with Brewster-angle incidence minimizes specular reflection at the surfaces.
- This measurement geometry can be realized in a single prism shaped sample by propagating the beam along parallel pathways (a, b, c), for example parallel to the prism base (Fig. 3).
- the present invention is superior to single sample techniques that utilize a sample having plane parallel surfaces, as disclosed in United States patent no. 5,776,219, the contents of which are incorporated herein by reference.
- measurement system 10 includes a single sample of optical microlithography material 12 and a below 300 nm light source 14 for generating a beam of light 16 and a detector 18 for detecting the beam of light transmitted though the sample 12.
- the prism-shaped wedge sample 12 has two surfaces through which the light beam 16 travels, the surfaces being spaced apart, non- parallel relationship.
- the sample 12 also includes a beam splitter 20, and a second light detector 22 to measure the power of the light prior to transmission through the sample 12.
- the sample 12 can be in the non -parallel sided shape of a prism, for example.
- Other sample shapes having non-parallel, opposed wedge surfaces are within the scope of the present invention, for example a prisim type shape with a truncated top.
- Transmittance is determined by comparing the optical power generated by the light source detected by detector 22 with the optical power of the light detected by detector 18.
- the sample 12 is translated relative to the light beam 16 to provide measurement of transmittance through multiple paths lengths within a single sample, such as with a translating positioning stage 100.
- the following non-limiting example will further illustrate the principles of the present invention.
- the prism angle was selected such that below 300 nm polarized light is incident on both optically polished non-parallel surfaces of optical material sample 12 at the Brewster angle.
- Figure 2 plots the results of -LnT (Transmittance) versus sample thickness using a 193 nm and 248 nm laser light beams from a pulsed below 300 nm laser light source 14.
- a Lambda Physik multi-gas excimer laser was used.
- the 193nm source was operated at up to 400 Hz and an energy/pulse of up to 100 mJ.
- the 248 nm source was operated at 500 Hz and an energy/pulse up to about 10 to 50 mJ.
- the beam splitters 20 were calcium fluoride substrates having 50% reflectance.
- the pulse energy used for measurements preferably did not exceed 30 microjoules/c ⁇ T.
- the fluence levels of the measurement laser beam are low enough that transmission changes are not induced in the optical material.
- a linear fit to the 50 data points provides a slope, or attenuation coefficient, with a standard deviation around 3 x 10 "5 /cm (0.003% T/cm).
- the absolute internal transmittance obtained was in Fig. 2, (0.9985 +/- 2 xlO "5 at 248 nm (line 52), and 0.9905 +/- 3 x 10 "5 at 193 nm (line 54)) are in very good agreement with conventional spectrophotometric measurements of other Corning HPFS ® type glass, but compared to the best known accuracy of 0.1% T/cm at 248 nm for prior art methods, have more than one order of magnitude less uncertainty.
- Fig. 2 a linear fit to the 50 data points (50 different pathlengths) provides a slope, or attenuation coefficient, with a standard deviation around 3 x 10 "5 /cm (0.003% T/cm).
- the absolute internal transmittance obtained was in Fig. 2, (0.9985 +/- 2 xlO "5
- the obtainable measurement uncertainty corresponds to a loss detection limit on the order of a few ppm, or approximately 1 dB/km.
- the method and apparatus of the present invention is applicable to optical microlithography material samples and to below 300 nm optical microlithography wavelengths.
- a pulsed below 300 nm source is used, such as an excimer laser.
- a beam divergence of less than 10 "2 radians is preferred.
- transmittance of a homogeneous optical material localized short-range inhomogeneities and variations in index are preferably detected in optical lithography materials. Scanning the sample in an X-Y mode with a small diameter beam is preferably used to generate a two dimensional transmittance map of a sample. Maximum pathlength is limited only by sample fixturing and degree of beam collimation, and amount of optical material available.
- an entire large optical material sample such as a cylindrical large boule (such as 1 to 2 meters diameter) could be fashioned into a single prism-shaped sample with unparalleled sides, and measured in layers to build a two dimensional transmittance profile of radius vs. depth.
- the inventive measurement system can provide realtime compensation of below 300 nm pulse-to-pulse noise, and automatic rejection of pulse energies outside selected limits by use of a reference detector.
- the resultant plot of below 300 nm transmittance vs. thickness can contain as few, or as many, data points as needed to obtain the desired precision in the exponential fit (or linear fit of-lnT vs. L). It will be appreciated that in the conventional multiple sample methods of the prior art, the number of data points is limited, in a practical sense, by the amount of optical material available and the time and cost of sample preparation.
- the use of polarized light and choosing the prism angle and beam position such that light is incident on both surfaces at the Brewster angle reduces reflectance at each surface to approximately 10 "3 to 10 "4 as opposed to approximately 4xl0 "2 per surface for normal incidence.
- the present invention reduces the uncertainty of the exponential fit to the data. In other words, the present invention improves the accuracy of the determination of the bulk attenuation coefficient at below 300 nm wavelengths. Additionally, according to the present invention, the speed of measurement of multiple paths within a single sample is inherently faster than measuring multiple samples. The present invention requires only a single sample mount and alignment. Such a fast measurement reduces the requirements for instrument and sample-surface stability.
- the present invention includes an apparatus that includes a below 300 nm light source for generating a below 300 nm light beam, a detector for detecting the light beam, and an optical microlithography material sample having two opposed, non-parallel surfaces which provide at least two pathlengths for the single sample. Further details on internal transmittance measurement systems may be found in: United States patent no. 5,776,219; J.P. Dakin, W.A.
- a 193 nm transmission standard is preferably made in the shape of a wedge with an apex angle for use with the 193 nm wavelength of 65.3 degrees from HPFS ® type high purity fused silica glass optical material.
- Preferably all sides of the transmission standard is polish finished to a 193 nm wavelength polish quality to at least a surface roughness RMS of about 5 angstroms.
- the transmission standard length corresponds to the pathlength used with quality control transmission measurements of the optical lithography blank or element.
- the length of the prism wedge transmission standard ranges from 10 to 200 cm. The transmission standard prism shaped wedge is measured in accordance with Fig.
- the transmission standards transmission may vary from top to bottom of the prism, so preferably the plot of transmission vs. location on the standard (T(L)) is generated as shown in Fig. 3b
- T(L) the plot of transmission vs. location on the standard
- Fig. 3b The average transmission for a transmission standard wedge T ave (L) is calculated. This transmission represents an absolute value of transmission from top to bottom of the standard. This then is used as a reference in spectrophotometer readings, when light will pass through two parallel surfaces of the transmission standard (Fig. 3a).
- the error for a transmission standard depends on the error obtained for the slope of transmission vs. pathlength at each individual location of the sample.
- the slope error of the transmission line is typically better than 10 "4 / cm base e.
- the slope error is 3xlO "5 /cm base e).
- Another contribution to the error for the standard is the number of locations (N) measured which depends on the sample length (minimal step determined by the beam size, 2-3 mm diameter).
- OR Brewester angle
- n refractive index of the material under test at the desired wavelength
- DD 10 ⁇ / ⁇ N (cm)
- ⁇ precision of single point measurements
- ⁇ transmission loss / cm
- N number of the points in the transmission vs. pathlength plot.
- the base's size is preferably bigger than 1.5 cm, if 50 points (pathlengths) are collected.
- the invention includes a method of making a below 300nm optical lithography transmission standard.
- the method includes providing a below 300nm optical lithography material.
- the method includes forming the below 300nm optical lithography material into a wedge 102 having a longitudinal transmission standard length 101.
- the longitudinal standard length 101 correlates with an optical lithography optical element blank transmission path length.
- the wedge's longitudinal transmission standard length 101 terminates with a first (103) and a second (104) parallel faces 103 and 104.
- Wedge 102 is formed with a first (105) and a second (106) non -parallel sides 105 and 106 aligned along length 101 and normal to parallel faces 103 and 104.
- the non-parallel sides 105 and 106 provide a narrow wedge top 107 and a broad wedge bottom 108.
- the method includes providing a positionor 100 and providing a below 300nm measurement beam 16.
- the method includes aligning wedge 102 on positionor 100 wherein measurement beam 16 is transmitted through non-parallel sides 105 and 106 with a first path length (such as a, b, or c) and measured at a first measurement plane (such as A, B, C, D, E, or F) normal to length 101.
- the method includes positioning the measurement beam 16 at a second path length location (such as a, b, or c) in the first measurement plane and transmitting the measurement beam 16 through the non-parallel sides 105 and 106 and measuring the second path length location transmitted beam.
- the method includes positioning wedge 102 relative to measurement beam 16 wherein the measurement beam is transmitted through non-parallel sides 105 and 106 at an at least second measurement plane (such as A, B, C, D, E, or F) normal to the standard length 101.
- the at least second measurement plane is spaced from the first measurement plane.
- Measurement beam 16 is transmitted through non-parallel sides 105 and 106 in the at least second measurement plane at a short path length location (such as a) and measured.
- the measurement beam 16 is transmitted through sides 105 and 106 in the at least second measurement plane at a long path length location (such as b or c) and measured.
- the method includes determining an average attenuation coefficient from the measured transmitted beams 16 and transmitting a below 300nm longitudinal length transmission beam 120 through parallel faces 103 and 104 and along longitudinal transmission standard length 101 to provide an internal transmission standard value for the below 300 nm optical material for a length equal to the longitudinal transmission standard length.
- the method preferably includes calibrating an internal transmission measuring device such as a spectrophotometer using wedge 102 and its internal transmission standard value.
- positionor 100 comprises a positional stage, preferably with the positional stage providing for alignment of wedge 102 longitudinal length 101 in a vertical direction.
- positioning wedge 102 relative to measurement beam 16 includes vertically translating the vertically aligned wedge 102 with the positional stage supporting an end face.
- providing a below 300nm measurement beam includes providing a 248nm producing excimer laser and producing the 248nm measurement beam. In a further embodiment providing the measurement beam includes providing a 193nm producing excimer laser and producing the 193nm measurement beam. In a further embodiment providing the measurement beam includes providing a 157nm producing excimer laser and producing the 157nm measurement beam.
- providing a below 300nm optical material comprises providing a silica glass.
- the silica glass is a fluorinated silica glass.
- providing a below 300nm optical material comprises providing a fluoride optical material, preferably a fluoride crystal, most preferably a calcium fluoride crystal.
- the fluoride optical material is a fluoride glass.
- Preferably forming the optical material into a wedge includes forming a wedge wherein non-parallel sides 105 and 106 have an apex melting angle in the range from about 60° to 70°. Non-parallel sides 105 and 106 do not have to meet at a top point apex in terms of having an apex meeting angle, since the apex meeting angle can be the meeting intersection of the planes of sides 105 and 106.
- the below 300nm transmission standard is for determining the below 300nm transmission of an optical lithography element blank which has an optical lithography path length and the longitudinal transmission standard length of formed wedge 102 corresponds to the optical lithography element blank optical lithography pathlength.
- the wedge is formed with a longitudinal transmission length in the range form about 1 to 100cm, and preferably about 1 to 25 cm.
- the wedge is formed with non-parallel sides 105 and 106 having a side length from the narrow wedge top to the broad wedge bottom in the range of about 1 to 100cm, and more preferably about 1 to 10cm.
- the wedge is formed with the parallel faces 103 and 104 having a polished surface with a roughness no greater than about 5 angstroms rms.
- Preferably providing the below 300nm measurement beam includes providing a below 200nm measurement beam.
- the invention includes a below 300nm optical lithography transmission standard, preferably for below 300 nm optical lithography wavelength transmission measurements.
- the below 300nm optical lithography transmission standard is comprised of a below 300nm optical material having a below 300nm transmission and formed into a wedge 102 having a longitudinal transmission standard length 101.
- the standard length 101 terminating with first (103) and second (104) parallel wedge end faces 103 and 104.
- Wedge 102 having first and second non-parallel wedge sides 105 and 106 aligned along the length 101 and normal to end faces 103 and 104.
- Wedge non-parallel sides 105 and 106 providing a narrow wedge top and a broad wedge bottom.
- the non-parallel sides having an apex meeting angle and the wedge faces 103 and 104 having a polished surface with a roughness no greater than 5 angstroms rms.
- the longitudinal transmission standard length 101 corresponding to a below 300nm optical transmission targeted path length with the standard wedge length having an internal transmission standard value.
- the optical material below 300nm transmission is greater than 99%/cm.
- the apex meeting angle is in the range from about 60° to 70°.
- the optical material comprises a silica glass, preferably fused silica glass.
- the silica glass is a fluorinated silica glass.
- the optical material comprises a fluoride optical material, preferably a fluoride crystal, and most preferably calcium fluoride.
- the fluoride optical material comprises a fluoride glass.
- the apex meeting angle is in the range of about 64° to 68° and more preferably in the range of about 65° to 67.5°.
- the standard has a 193nm internal transmission standard value and the apex meeting angle approximates 65.2°.
- silica glass a 248nm transmission standard has a 248nm internal transmission standard value and the apex meeting angle approximates 67°.
- the apex meeting angle is in the range of about 64° to 69°, and more preferably about 65° to 69°.
- a calcium fluoride crystal a 157nm transmission standard has a 157nm internal transmission standard value and the apex meeting angle approximates 65.3°.
- a calcium fluoride crystal a 193nm transmission standard has a 193 nm internal transmission standard value and the apex angle approximates 67.3°.
- a calcium fluoride crystal a 248nm transmission standard has a 248 internal transmission standard value and the apex angle approximates 68.5°.
- a 157nm transmission standard has a 157nm internal transmission standard value and the apex meeting angle approximates 62.2°.
Abstract
Description
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000606983A JP2002540395A (en) | 1999-03-22 | 2000-03-22 | Internal transmittance measurement method and device |
KR1020017012037A KR20020011373A (en) | 1999-03-22 | 2000-03-22 | Method and apparatus for measuring internal transmittance |
CA002366739A CA2366739A1 (en) | 1999-03-22 | 2000-03-22 | Method and apparatus for measuring internal transmittance |
AU39118/00A AU3911800A (en) | 1999-03-22 | 2000-03-22 | Method and apparatus for measuring internal transmittance |
EP00918282A EP1166084A1 (en) | 1999-03-22 | 2000-03-22 | Method and apparatus for measuring internal transmittance |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US27369399A | 1999-03-22 | 1999-03-22 | |
US09/273,693 | 1999-03-22 |
Publications (1)
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WO2000057158A1 true WO2000057158A1 (en) | 2000-09-28 |
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ID=23045016
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PCT/US2000/007670 WO2000057158A1 (en) | 1999-03-22 | 2000-03-22 | Method and apparatus for measuring internal transmittance |
Country Status (6)
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EP (1) | EP1166084A1 (en) |
JP (1) | JP2002540395A (en) |
KR (1) | KR20020011373A (en) |
AU (1) | AU3911800A (en) |
CA (1) | CA2366739A1 (en) |
WO (1) | WO2000057158A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006058741A1 (en) * | 2004-12-02 | 2006-06-08 | Foss Analytical A/S | Spectrophotometer |
RU2660398C1 (en) * | 2017-08-30 | 2018-07-06 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Method of determining the reflection or transmission coefficients of optical parts |
RU2757325C1 (en) * | 2020-09-28 | 2021-10-13 | Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" | Method for measuring total losses in large-base interferometer |
CN114371151A (en) * | 2020-10-15 | 2022-04-19 | 深圳莱宝高科技股份有限公司 | Transmittance testing method and transmittance testing system |
US11761873B2 (en) * | 2016-12-14 | 2023-09-19 | Schlumberger Technology Corporation | Method to predict downhole reservoir fluids interfacial tension |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100915677B1 (en) * | 2007-04-25 | 2009-09-04 | 한국생산기술연구원 | A laser absorptance measuring device and the measuring method thereby |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5602647A (en) * | 1993-07-14 | 1997-02-11 | Kyoto Daiichi Kagaku Co., Ltd. | Apparatus and method for optically measuring concentrations of components |
-
2000
- 2000-03-22 CA CA002366739A patent/CA2366739A1/en not_active Abandoned
- 2000-03-22 EP EP00918282A patent/EP1166084A1/en not_active Withdrawn
- 2000-03-22 WO PCT/US2000/007670 patent/WO2000057158A1/en not_active Application Discontinuation
- 2000-03-22 KR KR1020017012037A patent/KR20020011373A/en not_active Application Discontinuation
- 2000-03-22 JP JP2000606983A patent/JP2002540395A/en not_active Withdrawn
- 2000-03-22 AU AU39118/00A patent/AU3911800A/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5602647A (en) * | 1993-07-14 | 1997-02-11 | Kyoto Daiichi Kagaku Co., Ltd. | Apparatus and method for optically measuring concentrations of components |
Non-Patent Citations (1)
Title |
---|
HEITMANN W.: "Attenuation measurement in low-loss optical glass by polarized radiation", APPLIED OPTICS,, vol. 14, no. 12, December 1975 (1975-12-01), pages 3047 - 3052, XP002928780 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006058741A1 (en) * | 2004-12-02 | 2006-06-08 | Foss Analytical A/S | Spectrophotometer |
US7796261B2 (en) | 2004-12-02 | 2010-09-14 | Foss Analytical A/S | Spectrophotometer |
US11761873B2 (en) * | 2016-12-14 | 2023-09-19 | Schlumberger Technology Corporation | Method to predict downhole reservoir fluids interfacial tension |
RU2660398C1 (en) * | 2017-08-30 | 2018-07-06 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Method of determining the reflection or transmission coefficients of optical parts |
RU2757325C1 (en) * | 2020-09-28 | 2021-10-13 | Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" | Method for measuring total losses in large-base interferometer |
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AU3911800A (en) | 2000-10-09 |
JP2002540395A (en) | 2002-11-26 |
KR20020011373A (en) | 2002-02-08 |
CA2366739A1 (en) | 2000-09-28 |
EP1166084A1 (en) | 2002-01-02 |
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