WO2000041249A1 - Diode electroluminescente et son procede de fabrication - Google Patents
Diode electroluminescente et son procede de fabrication Download PDFInfo
- Publication number
- WO2000041249A1 WO2000041249A1 PCT/JP1999/006533 JP9906533W WO0041249A1 WO 2000041249 A1 WO2000041249 A1 WO 2000041249A1 JP 9906533 W JP9906533 W JP 9906533W WO 0041249 A1 WO0041249 A1 WO 0041249A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- emitting diode
- light emitting
- pellet
- light
- main surface
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000008188 pellet Substances 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 30
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- 229910005540 GaP Inorganic materials 0.000 abstract description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 23
- 238000000605 extraction Methods 0.000 description 11
- 238000007788 roughening Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 peroxide hydrogen Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Definitions
- the present invention may be described as a light emitting diode [hereinafter simply referred to as “: LED (abbreviation for Light Emitting Diode)”. ] And a method of manufacturing the same, particularly phosphide arsenide gallium G a A s,. X P X mixed crystal (hereinafter, simply "G a A s P” may be referred to as.)
- the constituent material and light emitting diode hereinafter, it may be simply referred to as “Gas P-based LED.”
- Background art a light emitting diode
- the luminous efficiency of the LED is determined by the internal quantum efficiency and the extraction efficiency. Since the internal quantum efficiency is determined by the composition of the constituent materials of the LED, in order to increase the luminous efficiency, the loss due to light absorption inside the LED and the total reflection at the interface between the light emitting surface and air Therefore, it is necessary to increase the extraction efficiency by suppressing the loss of light that is not extracted outside.
- wet etching is simple.
- the surface in the case of a gallium phosphide GaP-based pellet, the surface can be roughened by etching with hydrochloric acid, that is, an aqueous solution of HC1 (Japanese Patent Application Laid-Open No. 4-354382).
- hydrochloric acid that is, an aqueous solution of HC1
- a mixed solution of hydrofluoric acid Japanese Patent Laid-Open No. 6-151595
- nitric acid: sulfuric acid 95: 5 (Japanese Patent Laid-Open No. — 2 0 0 1 5 6) is valid.
- the GaAsP mixed crystal pellet 40 is, for example, an n-type GaAs epitaxial layer 42 on an n-type GaAs single crystal substrate 41, and the mixed crystal ratio X changes.
- G aA s 1-x P x Constant mixed crystal ratio layer 45 Zn is diffused from the surface of layer 45 to invert the G aA s, _ X P X constant mixed crystal ratio layer 45 to p-type, and constant mixed crystal ratio
- a p_n junction is formed at the boundary between layers 44 and 45, and then a gold alloy is deposited on main surface 46 and main back surface 47 to form p-side electrode 51 and n-side electrode 52 Finally, it is obtained by cutting into chips by dicing.
- reference numerals 48a and 48b denote the side surfaces of the pellet, which are formed so as to be substantially perpendicular to the main surface 46 as a cut surface when the chip is formed by dicing.
- the present inventors have revealed that repeated studies in order to develop a possible etchant roughening process on Ga A s P least also the main surface of the mixed crystal in an aqueous solution of bromine B r 2 or iodo-containing 1 2 was found to be suitable.
- the present invention has been achieved by continuing various experiments using this etching solution.
- An object of the present invention is to provide a light-emitting diode (GaAsP-based LED) comprising gallium arsenide GaAsP mixed crystal whose light intensity is greatly improved as compared with the prior art, and a method of manufacturing the same. And Disclosure of the invention
- the present invention has been made in order to solve the above-mentioned problems, and in a light-emitting diode having a main surface made of a GaAsP mixed crystal, the main surface is a rough surface. .
- the rough surface is formed with fine irregularities having a particle size of 0.3 ⁇ m or more and 3 m or less.
- the method of manufacturing the light emitting Daio one de of the present invention is a method of manufacturing a light emitting Daiodo main surface has a Perez preparative ing from G a A s P mixed crystal, said Perez preparative B r 2 or 1 2 in an aqueous solution A fine unevenness is formed on at least the main surface of the pellet by processing with an etching solution containing the pellet.
- the etching solution is preferably an aqueous solution further containing nitric acid, hydrogen fluoride, and acetic acid. Furthermore, the etching solution, B r 2 or 1 2 is against the one part, 40-8 0 parts of nitric acid, 4 0 parts to 3 0 0 parts hydrofluoric, 40 0 parts of acetic acid and 2 0 0 0 More preferably, it is contained in a molar composition ratio of parts.
- FIG. 1 is a schematic sectional view showing a main surface and side surfaces of a light emitting diode pellet of the present invention.
- Figure 2 is an explanatory diagram showing the angle of arrival of light on the light emitting surface and the state of transmission and reflection of light.
- Figure 2 (A) shows the case where light is transmitted
- Figure 2 (B) shows the case where light is reflected. It shows it.
- Fig. 3 is an explanatory diagram showing the angle of arrival of light and the state of transmission and reflection of light when fine irregularities are formed on the light emitting surface.
- Fig. 3 (A) shows the particle diameter of irregularities of 0.3 ⁇ m. In the case of 3 m or less, Fig. 3 (B) shows the case where the grain size of the irregularities exceeds 3 / zm, and Fig. 3 (C) shows the case where it is less than 0.3 / m.
- FIG. 4 is a flowchart showing the procedure of the method for manufacturing a light emitting diode of the present invention.
- FIG. 5 is an explanatory diagram showing an example of producing a light emitting diode.
- FIG. 6 is a schematic sectional view showing a main surface and side surfaces of a conventional light emitting diode pellet.
- FIG. 1 is a schematic cross-sectional view showing a light emitting diode pellet (hereinafter sometimes simply referred to as “GaAsP-based pellet”) 20 using gallium arsenide phosphide GaAsP of the present invention as a constituent material. is there.
- GaAsP-based pellet a light emitting diode pellet
- the main surface 6 made of a GaAsP mixed crystal was roughened by wet etching to improve the light extraction efficiency, and its grain size was 0.3 ⁇ m or more. Etching conditions are adjusted to be 3 m or less
- the light emitted by the gallium arsenide arsenide GaAsP mixed crystal has a peak wavelength of about 600 nm from about 580 nm in yellow to about 65 O nm in red. If the degree of surface roughening is adjusted so that the grain size of the main surface 6 of 0 is slightly wider than this wavelength range from 0.3 m to 3 ⁇ m, the probability of total reflection of light is reduced well, The take-out efficiency increases.
- the light extraction efficiency will be described in more detail. As described above, in order to obtain high light intensity, it is necessary to increase the light extraction efficiency by reducing the proportion of light that is not extracted to the outside due to total reflection at the interface between the light emitting surface and air. There is.
- the refractive index n of GaP is about 3.3 and the refractive index n of GaAs is about 3.8.
- n is from about 3.3 to about 3.8.
- the critical angle of total reflection 0 when light enters the air with the refractive index of 1 from such a large refractive index n is
- the critical angle for total reflection 6> about 15 ° to about 18 °.
- the interface between the light emitting surface and the air is roughened by wet etching so that fine unevenness is formed instead of a plane.
- FIG. 3 when fine irregularities are formed on the interface, even if the light reaches the interface at an angle larger than the critical angle of total reflection 0, it is locally smaller than the critical angle of total reflection 0. Corner Since there is a convex surface having a degree, light can pass through the convex surface into the air [Fig. 3 (A)].
- the fine unevenness particle diameter is preferably 0.3 zm or more and 3 / m or less [FIG. 3 (A)].
- the particle size of the fine irregularities exceeds 3 m, the irregularities are too gentle for the above-mentioned wavelength of light and act as a local mirror surface (FIG. 3 (B)).
- the particle size of the fine unevenness is less than 0.3 ⁇ m, the level of the unevenness with respect to the wavelength of light is too small and becomes substantially the same as a mirror surface (Fig. 3 (C) ].
- the particle diameter of the fine unevenness refers to a length from the rising of a certain convex object to the rising of an adjacent convex object. Also in Figure 3
- Fig. 1 the rough surface with fine irregularities with a particle size of 0.3 to 3 ⁇ m is shown in Fig. 1 as well as the main surface 6 and the pellet side 8 (8a, 8b). (Including the other two sides that are not processed), the light extraction effect becomes higher by one layer.
- an n-type GaP epitaxial layer 2 and an n-type GaAs After laminating the 1-x P x mixed crystal ratio changing layer 3 and the ⁇ -type GaAs 1-x P x constant crystal ratio constant layers 4 and 5 to which nitrogen is added in sequence, the GaAs 1-X P X mixed crystal by diffusing zinc Z n from the surface of the rate constant layer 5 the Ga a S l _ x P x-alloy composition constant layer 5 is inverted to p-type, the boundary of the alloy composition constant layer 4 and 5 p-n A GaAs Pepoxy wafer having a junction is obtained [Step (A)].
- a p-side electrode 11 and an n-side electrode 12 are formed by vapor deposition of a gold alloy [Step (B)].
- a GaAs P epitaxy wafer 10 is attached to the adhesive sheet 13 so as to cover the n-type electrode 12, and the GaA sP epitaxy wafer 10 is 0.3 mm ⁇ 0.3 mm II by dicing. ] [Pellet 20] [Step (C)].
- the cut pellet 20, 96% sulfuric acid H 2 S 0 4: 32% peroxide hydrogen H 2 0 2: Water H 2 0 3: 1: 1 composition ratio first of (volume) Etching is performed for 2 minutes with an etchant to remove processing strain caused by dicing [Step]].
- the pellet 20 is made of bromine Br 2 or iodine.
- a second etching solution containing 12 in an aqueous solution [Step (F)].
- an etching solution containing a B r 2 or 1 2 has not been used.
- the main back surface 7 of the pellet 20 is covered with an adhesive sheet 13 to protect it from the second etching solution so that it is not roughened. It is preferable that the main back surface 7 be in a mirror surface state rather than a rough surface because the light can escape from the main back surface 7 side so that the extraction effect can be improved.
- the main surface 6 of the GaAsP-based pellet 20 was prepared in the second etching solution. And the side surfaces 8a and 8b are etched for a predetermined period of time to form a rough surface having fine irregularities with a particle size of 0.3 to 3 ⁇ m.
- the optimum etching time varies somewhat depending on the mixed crystal ratio of the GaAs P-based pellet / the composition of the etching solution.
- the above-mentioned second etching solution contains only GaAsP mixed crystals However, since the G a P partially exposed on the side surface of the pellet 20 is also roughened, the main surface 6 and the side surfaces 8 a and 8 b exposed to the second etching solution are entirely removed. The body is roughened.
- the GaAs P-based pellet 20 is fixed on the stem 34 via the silver paste 36, and wire-bonded with the fine gold wire 32, followed by the transparent epoxy resin 38. Then, the light emitting diode 30 was formed. Next, a DC current of 20 mA was applied to the light emitting diode 30 and the luminous intensity of yellow light having an emission wavelength of 580 nm was measured (FIG. 4 (G)). The luminous intensity measurement results are shown in Table 1 (A). Compared with Comparative Example 1 shown below, the luminous intensity was improved by 88%. This improvement in luminous intensity means that the extraction effect is improved by roughening the surface of the belt 20.
- Example 1 A light emitting diode 30 made in exactly the same manner as in Example 1 except that the main surface 6 and the side surfaces 8a, 8b of the GaAs P-based pellet 20 were not subjected to etching for forming fine irregularities.
- Table 1 (B) shows the results of measuring the luminous intensity when a DC current of 20 mA was applied.
- Example 2 In the same manner as in Example 1, a light emitting diode 30 emitting yellow light having a wavelength of 5886 nm was prepared, and the luminous intensity was measured [Table 1 (C)]. Compared to Comparative Example 2 shown below, the luminous intensity was improved by 73%.
- a light emitting diode prepared in exactly the same manner as in Example 2 except that the main surface 6 and the side surfaces 8a, 8b, etc. of the GaAs P-based pellet 20 were not subjected to etching for forming minute projections and depressions.
- Table 1 (D) shows the results of measuring the luminous intensity by applying a 20 mA DC current to the diode 30.
- Example 2 In the same manner as in Example 1, a light-emitting diode 30 emitting yellow-brown light having a wavelength of 605 nm was prepared, and the luminous intensity was measured [Table 1 (E)]. Compared with Comparative Example 3 shown below, the luminous intensity was improved by 73%.
- the light emitting diode 30 fabricated in exactly the same manner as in Example 3 except that the main surface 6 and the side surfaces 8a, 8b, etc. of the GaAs P-based pellet 20 were not subjected to etching for forming fine irregularities.
- Table 1 (F) shows the results of measuring the luminous intensity when a 20 mA DC current was applied.
- Example 4 a light emitting diode 30 emitting orange light with a wavelength of 63 nm was prepared, and the luminous intensity was measured [Table 1 (G)]. Compared to Comparative Example 4 shown below, the luminous intensity was improved by 51%. (Comparative Example 4)
- Table 1 (H) shows the results of measuring the luminous intensity when a DC current of 20 mA was applied.
- the light emitting diode emitting yellow, tan, and orange is described, but the same effect can be obtained with the light emitting diode emitting red. Furthermore, in the present embodiment, since the p-side electrode 11 was formed on the main surface 6 and then subjected to a surface roughening treatment, the lower surface of the p-side electrode 11 was not roughened. It goes without saying that if the surface is roughened before the electrodes are formed, the entire main surface 6 can be roughened. Industrial applicability
- the surface of the GaAs P-based pellet is roughened.
- the B r 2 also can be achieved by using an etching solution containing 1 2 in an aqueous solution. More specifically, the surface is roughened with an etching solution containing nitric acid, hydrogen fluoride, and acetic acid in an aqueous solution to form fine irregularities on the main surface and side surfaces of the GaAs P pellet 20. It became possible to form.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
- Weting (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99973592A EP1061590A1 (en) | 1998-12-28 | 1999-11-24 | Light emitting diode and its manufacturing method |
KR1020007007748A KR100654508B1 (ko) | 1998-12-28 | 1999-11-24 | 발광다이오드 및 그 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10/373153 | 1998-12-28 | ||
JP37315398A JP3531722B2 (ja) | 1998-12-28 | 1998-12-28 | 発光ダイオードの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000041249A1 true WO2000041249A1 (fr) | 2000-07-13 |
Family
ID=18501668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/006533 WO2000041249A1 (fr) | 1998-12-28 | 1999-11-24 | Diode electroluminescente et son procede de fabrication |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1061590A1 (ja) |
JP (1) | JP3531722B2 (ja) |
KR (1) | KR100654508B1 (ja) |
TW (1) | TW449936B (ja) |
WO (1) | WO2000041249A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745246B2 (en) | 2005-05-31 | 2010-06-29 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating light emitting device |
Families Citing this family (35)
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US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (ja) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
JP2003078162A (ja) * | 2001-08-31 | 2003-03-14 | Shin Etsu Handotai Co Ltd | GaP系半導体発光素子 |
WO2003034508A1 (en) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Light emitting device and method for manufacture thereof |
KR20030052060A (ko) * | 2001-12-20 | 2003-06-26 | 엘지전자 주식회사 | 발광 소자 및 그의 제조방법 |
TW576864B (en) * | 2001-12-28 | 2004-02-21 | Toshiba Corp | Method for manufacturing a light-emitting device |
JP3782357B2 (ja) * | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP3715627B2 (ja) | 2002-01-29 | 2005-11-09 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP3776824B2 (ja) | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
KR101030068B1 (ko) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
JP2004221112A (ja) * | 2003-01-09 | 2004-08-05 | Sharp Corp | 酸化物半導体発光素子 |
JP2005019541A (ja) * | 2003-06-24 | 2005-01-20 | Rohm Co Ltd | 光半導体装置 |
AU2003263727A1 (en) | 2003-09-19 | 2005-04-11 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
KR100591942B1 (ko) * | 2004-02-03 | 2006-06-20 | 서울옵토디바이스주식회사 | 발광소자 |
US7763477B2 (en) | 2004-03-15 | 2010-07-27 | Tinggi Technologies Pte Limited | Fabrication of semiconductor devices |
KR100568297B1 (ko) | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
KR20070028364A (ko) | 2004-04-07 | 2007-03-12 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 발광 다이오드상의 반사층 제조 |
KR100608930B1 (ko) | 2004-04-14 | 2006-08-08 | 광주과학기술원 | 마스크 없는 선택적 습식식각을 이용하는 ⅲ-질화물계반도체 발광소자의 제조방법 |
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SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
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- 1999-11-24 KR KR1020007007748A patent/KR100654508B1/ko not_active IP Right Cessation
- 1999-11-24 WO PCT/JP1999/006533 patent/WO2000041249A1/ja active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
EP1061590A1 (en) | 2000-12-20 |
JP3531722B2 (ja) | 2004-05-31 |
TW449936B (en) | 2001-08-11 |
JP2000196141A (ja) | 2000-07-14 |
KR20010074424A (ko) | 2001-08-04 |
KR100654508B1 (ko) | 2006-12-05 |
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