WO2000028342A1 - Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor - Google Patents
Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor Download PDFInfo
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- WO2000028342A1 WO2000028342A1 PCT/GB1999/003594 GB9903594W WO0028342A1 WO 2000028342 A1 WO2000028342 A1 WO 2000028342A1 GB 9903594 W GB9903594 W GB 9903594W WO 0028342 A1 WO0028342 A1 WO 0028342A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
- G11B5/09—Digital recording
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
- G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B19/00—Driving, starting, stopping record carriers not specifically of filamentary or web form, or of supports therefor; Control thereof; Control of operating function ; Driving both disc and head
- G11B19/02—Control of operating function, e.g. switching from recording to reproducing
- G11B19/04—Arrangements for preventing, inhibiting, or warning against double recording on the same blank or against other recording or reproducing malfunctions
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Definitions
- This invention relates in general to a direct access storage device (DASD) of the type utilizing magnetoresistive read sensors for reading signals recorded in a magnetic medium and, more particularly, it relates to a DASD having a novel magnetic tunnel junction (MTJ) sensor for minimizing the effect of thermal asperities.
- DASD direct access storage device
- MTJ magnetic tunnel junction
- Computers often include auxiliary memory storage devices having media on which data can be written and from which data can be read for later use.
- a direct access storage device disk drive
- rotating magnetic disks is commonly used for storing data in magnetic form on the disk surfaces. Data is recorded on concentric, radially spaced tracks on the disk surfaces. Magnetic heads including read sensors are then used to read data from the tracks on the disk surfaces.
- magnetoresistive read sensors In high capacity disk drives, magnetoresistive read sensors, commonly referred to as MR heads, are the prevailing read sensor because of their capability to read data from a surface of a disk at greater track and linear densities than thin film inductive heads.
- An MR sensor detects a magnetic field through the change in the resistance of its MR sensing layer (also referred to as an "MR element") as a function of the strength and direction of the magnetic flux being sensed by the MR layer.
- the conventional MR sensor operates on the basis of the anisotropic magnetoresistive (AMR) effect in which an MR element resistance varies as the square of the cosine of the angle between the magnetization in the MR element and the direction of sense current flowing through the MR element.
- AMR anisotropic magnetoresistive
- GMR giant magnetoresistance
- the resistance of the MR sensing layer varies as a function of the spin-dependent transmission of the conduction elections between magnetic layers separated by a non-magnetic layei (spacer) and the accompanying spin-dependent scattering which takes place at the interface of the magnetic and non-magnetic layers and within the magnetic layers.
- GMR sensors using only two layers of ferromagnetic material e.g., Ni-Fe or Co or Ni-Fe-Co of Ni-Fe/Co
- ferromagnetic material e.g., Ni-Fe or Co or Ni-Fe-Co of Ni-Fe/Co
- non-magnetic material e.g., copper
- Fig 1 shows a prior art SV sensor 100 comprising end regions 104 and 106 separated by a central region 102.
- a first ferromagnetic layer referred to as a pinned layer 120
- a second ferromagnetic layer referred to as a free layer 110
- the magnetization of a second ferromagnetic layer is not fixed and is free to rotate in response to the magnetic field from the recorded magnetic medium (the signal field) .
- the free layer 110 is separated from the pinned layer 120 by a non-magnetic, electrically conducting spacer layer 115.
- Hard bias layers 130 and 135 formed in the end regions 104 and 106, respectively, provide longitudinal bias for the free layer 110.
- Leads 140 and 145 formed on hard bias layers 130 and 135, respectively, provide electrical connections for sensing the resistance of the SV sensor 100.
- the MTJ device has potential applications as a memory cell and as a magnetic field sensor.
- the MTJ device comprises two ferromagnetic layers separated by a thin, electrically insulating, tunnel barrier layer.
- the tunnel barrier layer is sufficiently thin that quantum-mechanical tunnelling of charge carriers occurs between the ferromagnetic layers.
- the tunnelling process is electron spin dependent, which means that the tunnelling current across the junction depends on the spin-dependent electronic properties of the ferromagnetic materials and is a function of the relative orientation of the magnetic moments, or magnetization directions, of the two ferromagnetic layers.
- one ferromagnetic layer has its magnetic moment fixed, or pinned, and the other ferromagnetic layer has its magnetic moment free to rotate in response to an external magnetic field from the recording medium (the signal field) .
- the sensor resistance is a function of the tunnelling current across the insulating layer between the ferromagnetic layers. Since the tunnelling current that flows perpendicularly through the tunnel barrier layer depends on the relative magnetization directions of the two ferromagnetic layers, recorded data can be read from a magnetic medium because the signal field causes a change of direction of magnetization of the free layer, which in turn causes a change in resistance of the MTJ sensor and a corresponding change in the sensed current or voltage.
- IBM's U. S. Patent No. 5,650,958 granted to Gallagher et al. incorporated in its entirety herein by reference, discloses an MTJ sensor operating on the basis of the magnetic tunnel junction effect.
- Fig. 2 shows a prior art MTJ sensor 200 comprising a first electrode 204, a second electrode 202, and a tunnel barrier 215.
- the first electrode 204 comprises a pinned layer (pinned ferromagnetic layer) 220, an antiferromagnetic (AFM) layer 230, and a seed layer 240.
- the magnetization of the pinned layer 220 is fixed through exchange coupling with the AFM layer 230.
- the second electrode 202 comprises a free layer (free ferromagnetic layer) 210 and a cap layer 205.
- the free layer 210 is separated from the pinned layer 220 by a non-magnetic, electrically insulating tunnel barrier layer 215.
- the free layer 210 has its magnetization oriented in the direction shown by arrow 212, that is, generally perpendicular to the magnetization direction of the pinned layer 220 shown by arrow 222 (tail of the arrow that is pointing into the plane of the paper) .
- a signal detector 280 typically including a recording channel such as a partial-response maximum-likelihood (PRML) channel, connected to the first and second leads 260 and 265 senses the change in resistance due to changes induced in the free layer 210 by the external magnetic field.
- PRML partial-response maximum-likelihood
- an MR sensor exhibits a change in resistance when in the presence of a changing magnetic field. This resistance change is transformed into a voltage signal by passing a constant sense current through the MR element .
- the value of the DC voltage for a given MR sensor is the product of the constant sense current and the total resistance between the MR sensor leads. Since the change in the resistance is the principal upon which the MR sensor operates, the change in resistance can substantially effect the performance of the MR sensor and the disk drive incorporating the MR sensor.
- TA thermal asperity
- the thermal asperity 320 comprises a sudden shift 325 in the DC base voltage followed by an exponential decay 330 in the DC base voltage.
- the exponential decay 330 in the DC base voltage continues until the DC base voltage 310 is reached.
- the sudden shift 325 in the DC base voltage could be several times larger than the data signal 335 causing the electrical circuitry connected directly or indiiectly to the MR sensor to saturate leading to the loss of the data.
- the loss of the data depending on the size of the thermal asperity 320, could very easily be several bytes long, each byte being eight bits long.
- ARC asperity reduction circuit
- MR sensors and spin valve sensors with thermal asperity reduction circuitry to compensate for the effect of thermal asperities are described in IBM's U. S. Patent No. 5,793,576 to Gill and in IBM's U. S. Patent No. 5,793,207 to Gill, respectively, the contents of which are incorporated herein by reference.
- sensors having four leads, two leads for providing sense current to the MR or SV sensor and two leads for providing current to an asperity compensation layer.
- the voltages developed across the MR or SV element (voltages due to the presence of thermal asperities and voltages due to the presence of data fields) and the asperity compensation layer (voltages due to the presence of thermal asperities) are applied to the inputs of a differential amplifier for substantial elimination of the thermal asperity signal.
- the MTJ sensor resistance changes as the spin dependent tunnelling current through the tunnel barrier layer in the sensor changes due to the magnetic field of the data recorded on the disk.
- the base resistance of the MTJ sensor due to a constant bias voltage applied across the tunnel barrier layer decreases when a thermal asperity causes an increase of the temperature of the tunnel barrier layer.
- the resulting exponentially decaying thermal asperity signal interferes with detection of the superimposed data signal. Therefore, there is a need for an invention that minimizes the effect of thermal asperities for MTJ sensors without utilizing a complicated recording channel or a separate ARC module.
- MTJ magnetic tunnel junction
- a magnetic tunnel junction (MTJ) sensor having a first MTJ stack separated from a second MTJ stack by a common electrode. Electrodes for providing sense current to the first MTJ stack and to the second MTJ stack are provided by a first shield and a second shield, respectively.
- MTJ magnetic tunnel junction
- the first MTJ stack has a free layer separated from a pinned layer by a tunnel barrier layer.
- An AFM layer adjacent to the pinned layer provides an exchange field to fix (pin) the magnetization of the pinned layer perpendicular to the ABS .
- the magnetization of the free layer is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
- the second MTJ stack has a free layer separated from a pinned layer by a tunnel barrier layer.
- An AFM layer adjacent to the pinned layer provides an exchange field to fix (pin) the magnetization of the pinned layer perpendicular to the ABS and antiparallel to the magnetization direction of the pinned layer of the first MTJ stack.
- the magnetization of the free layer is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
- the magnetoresistive signal generated due to an external field from the disk by the fust MTJ stack will diffei in phase by 180 ⁇ > with respect to the magnetoresistive signal generated due to the same external field by the second MTJ stack.
- the free layer of the first MTJ stack and the free layer of the second MTJ stack are both adjacent to the common electrode that is disposed between the first and second MTJ stacks.
- a first current source connected to the first shield and the common electrode provides sense current to the first MTJ stack and a second current source connected to the second shield and the common electrode provides sense current to the second MTJ stack.
- the currents flowing in each MTJ stack are adjusted so that the product of the current flowing in the first MTJ stack and the resistance of the first MTJ stack is equal to the product of the current flowing through the second MTJ stack and the resistance of the second MTJ stack.
- the voltage developed across the first MTJ stack is fed into the first input terminal of a differential circuit and the voltage developed across the second MTJ stack is fed into the second input terminal of the differential circuit.
- the differential circuit further has an output terminal and a ground (common) terminal .
- the thermal asperity signal developed across the first MTJ stack and the thermal asperity signal developed across the second MTJ stack are substantially of the same shape, magnitude and phase.
- the magnetoresistive signal generated across the first MTJ stack differs in phase by 180" with respect to the magnetoresistive signal generated across the second MTJ stack.
- the thermal asperity signal is present and common at both input terminals of the diffeiential circuit, it will be cancelled by the differential circuit.
- the magnetoresistive signals due to the data field on the disk differ in phase by 180" at the two input terminals resulting in an output signal equal to the sum of the magnetoresistive signals at the two input terminals.
- Fig. 1 is an air bearing surface view, not to scale, of a prior art SV sensor
- Fig. 2 is an air bearing surface view, not to scale, of a prior art MTJ sensor
- Fig 3 is a graph showing a thermal asperity signal and the data signal read back from a data track
- Fig. 4 is a simplified diagram of a magnetic recording disk drive system
- Fig. 5 is a vertical cross-section view, not to scale, of an inductive write/MR read head with the MR read head located between shields and adjacent to the inductive write head;
- Fig. 6 is an air bearing surface view, not to scale, of an embodiment of the magnetic tunnel junction sensor of the present invention.
- Fig. 7 is a schematic diagram illustrating a thermal asperity reduction method and means according to the preferred embodiment of the present invention.
- Figs. 8a, 8b and 8c are graphs illustrating the signals at the input terminals and the output terminal of the differential circuit in the preferred embodiment of the present invention in the absence of thermal asperity and data signal, in the absence of thermal asperity and the presence of data signal, and in the presence of thermal asperity and data signal;
- Fig. 9 is a graph illustrating amplified portions A, B and C of the signals from Figs. 8a, 8b and 8c, respectively, in the presence of thermal asperity and data signal and showing the phase relationship of the signals;
- Fig. 10 is an air bearing surface view, not to scale, of an alternate embodiment of the magnetic tunnel junction sensor of the present invention.
- a disk drive 400 embodying the present invention As shown in Fig. 4, at least one rotatable magnetic disk 412 is supported on a spindle 414 and rotated by a disk drive motor 418.
- the magnetic recording media on each disk is in the form of an annular pattern of concentric data tracks (not shown) on the disk 412.
- At least one slider 413 is positioned on the disk 412, each slider 413 supporting one or more magnetic read/write heads 421 where the head 421 incorporates the MTJ sensor of the present invention.
- the slider 413 is moved radially in and out over the disk surface 422 so that the heads 421 may access different portions of the disk where desired data is recorded.
- Each slider 413 is attached to an actuator arm 419 by means of a suspension 415.
- the suspension 415 provides a slight spring force which biases the slider 413 against the disk surface 422.
- Each actuator arm 419 is attached to an actuator 427.
- the actuator as shown in Fig. 4 may be a voice coil motor (VCM) .
- the VCM comprises a coil movable within a fixed magnetic field, the direction and speed of the coil movements being controlled by the motor current signals supplied by a controller 429.
- the rotation of the disk 412 generates an air bearing between the slider 413 (the surface of the slider 413 which includes the head 421 and faces the surface of the disk 412 is referred to as an air bearing surface (ABS) ) and the disk surface 422 which exerts an upward force or lift on the slider.
- ABS air bearing surface
- control unit 429 The various components of the disk storage system are controlled in operation by control signals generated by the control unit 429, such as access control signals and internal clock signals.
- the control unit 429 comprises logic control circuits, storage chips and a microprocessor.
- the control unit 429 generates control signals to control various system operations such as drive motor control signals on line 423 and head position and seek control signals on line 428.
- the control signals on line 428 provide the desired current profiles to optimally move and position the slider 413 to the desired data track on the disk 412.
- Read and write signals are communicated to and from the read/write heads 421 by the recording channel 425.
- Recording channel 425 may be a partial response maximum likelihood (PMRL) channel or a peak detect channel.
- PMRL partial response maximum likelihood
- recording channel 425 is a PMRL channel.
- disk storage systems may contain a large number of disks and actuators, and each actuator may support a number of sliders .
- Fig. 5 shows a cross-sectional schematic view of the read/write head 500 embodying the present invention which includes an MTJ read head portion and an inductive write head portion.
- the head 500 is lapped to form an ABS.
- the read head includes an MTJ sensor 540 drsposed between first and second shield layers SI and S2.
- An insulating gap layer Gl is disposed between the first and second shield layers SI and S2 in the region away from the MTJ sensor.
- the write head includes a coil layer C and an insulation layer IN2 which are disposed between insulation layers INI and IN3 which are, in turn, disposed between first and second pole pieces PI and P2.
- a gap layer G2 is disposed between the first and second pole pieces PI, P2 for providing a magnetic gap at their pole tips adjacent to the ABS for providing a write gap.
- the combined read/write head 500 shown in Fig. 5 is a "merged" head in which the second shield layer S2 of the read head is employed as a first pole piece PI for the write head.
- a "piggyback" head may be used in which the second shield layer S2 of the lead head is a separate and distinct layer from the layer forming the first pole piece PI for the write head.
- Fig. 6 shows an air bearing surface (ABS) view, not to scale, of an MTJ sensor 600 according to the preferred embodiment of the present invention.
- the MTJ sensor 600 comprises passive end regions 664 and 666 separated from each other by an active central region 662.
- the active region of the MTJ sensor 600 comprises a first MTJ stack 602 and a second MTJ stack 604 formed in the central region 662.
- a common electrode layer 642 of electrically conducting material such as gold disposed between the first MTJ stack 602 and the second MTJ stack 604 is formed in the central region 662 and in the end regions 664, 666.
- the first MTJ stack is formed directly on a first shield (SI) 640 in the central region 662.
- SI first shield
- the first shield 640 is a layer of soft ferromagnetic material such as Ni-Fe (permalloy), or alternatively Al-Fe-Si (Sendust), deposited on a substrate 601 and extending over the central region 662 and the end regions 664 and 666 to provide magnetic shielding of the MTJ sensor 600 from stray magnetic fields.
- First insulator layers 650 and 652 of electrically insulating material such as Al 0, are formed in end regions 664 and 666, respectively, on the first shield 640 and in abutting contact with the first MTJ stack 602.
- hard bias layers may be provided within the first insulator layers 650 and 652 and the second insulator layers 654 and 656 as is known in the art.
- the first MTJ stack 602 comprises a ferromagnetic first free layer 622, a ferromagnetic first pinned layer 618, a first tunnel barrier layer 620 disposed between the first free layer 622 and the first pinned layer 618, a seed layer 610 and a first antiferromagnetic layer (AFMl) 612 disposed between the first pinned layer 618 and the seed layer 610.
- the first MTJ stack 602 comprises a ferromagnetic first free layer 622, a ferromagnetic first pinned layer 618, a first tunnel barrier layer 620 disposed between the first free layer 622 and the first pinned layer 618, a seed layer 610 and a first antiferromagnetic layer (AFMl) 612 disposed between the first pinned layer 618 and the seed layer 610.
- AFMl antiferromagnetic layer
- AFMl layer 612 is exchange coupled to the first pinned layer 618 providing an exchange field to pin the magnetization direction of the first pinned layer 618 perpendicular to the ABS.
- the magnetization of the first free layer 622 is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
- the second MTJ stack 604 comprises a ferromagnetic second free layer 624, a ferromagnetic second pinned layer 628, a second tunnel barrier layer 626 disposed between the second free layer 624 and the second pinned layer 628, a cap layer 632 and a second antiferromagnetic layer (AFM2) 630 disposed between the second pinned layer 628 and the cap layer 632.
- the AFM2 layer 622 is exchange coupled to the second pinned layer 628 providing an exchange field to pin the magnetization direction of the second pinned layer 628 perpendicular to the ABS.
- the magnetization of the second free layer 624 is oriented parallel to the ABS and is free to rotate in the presence of a signal magnetic field.
- the MTJ sensor 600 may be fabricated in a magnetron sputtering or an ion beam sputtering system to sequentially deposit the multilayer structure shown in Fig. 6.
- the first shield (SI) 640 of Ni-Fe having a thickness in the range of 500-1000 nm is deposited on the substrate 601.
- the seed layer 610, the AFMl layer 612, the first pinned layer 618, the first tunnel barrier layer 620, and the first free layer 622 are sequentially deposited over the first shield 640 in the presence of a longitudinal or transverse magnetic field of about 40 Oe to orient the easy axes of all the ferromagnetic layers.
- the seed layer 610 is a layer deposited to modify the crystallographic texture or grain size of the subsequent layers, and may not be needed depending on the material of the subsequent layer. If used, the seed layer may be formed of tantalum (Ta) , zirconium (Zr) , or nickel-iron (Ni-Fe) having a thickness of about 3-5 nm.
- the AFMl layer 612 formed of Mn o -Fe s , , or alternatively, of Ir 20 -Mn 80 , having a thickness of about 10 nm is deposited on the seed layer 610.
- the ferromagnetic first pinned layer 618 may be formed of Ni-Fe having a thickness in the range of about 2-5 nm, or alternatively, may be formed of a sub-layer of Ni-Fe having a thickness in the range of 2-5 nm deposited on the AFMl layer 612 and an interface layer of cobalt (Co) having a thickness of about 0.5 nm deposited on the Ni-Fe sub-layer.
- the first tunnel barrier layer 620 is formed of Al 0, by depositing and then plasma oxidizing an 0.8-2 nm aluminum (Al) layer on the first pinned layer 618.
- the ferromagnetic first free layer 622 may be formed of Ni-Fe having a thickness of 2-5 nm, or alternatively, may be formed of an interface layer of Co having a thickness of about 0.5 nm deposited on the first tunnel barrier layer 620 and a sub-layer of Ni-Fe having a thickness in the range of 2-5 nm deposited on the Co interface layer.
- the first MTJ stack 602 is defined in the central region 662 by depositing a photoresist and using photolithography and ion milling processes well known in the art.
- the first insulator layers 650 and 652 can now be deposited on the exposed first shield 640 in the end regions 664 and 666, respectively.
- the first insulator layers 650 and 652 are formed of Al 0, by depositing and then plasma oxidizing an Al layer having a thickness approximately equal to the total thickness of the first MTJ stack 602.
- the photoresist protecting the first MTJ stack 602 is then removed and the common electrode 642 of gold (Au) having a thickness in the range of 20-30 nm is deposited on the exposed first MTJ stack 602 and on the first insulator layers 650 and 652.
- the second MTJ stack 604 is formed by sequentially depositing the ferromagnetic second free layer 624, the second tunnel barrier layer 626, the ferromagnetic second pinned layer 628, the AFM2 layer 630, and the cap layer 632 over the common electrode 642 in the presence of a longitudinal or transverse magnetic field of about 40 Oe to orient the easy axes of all the ferromagnetic layers.
- the second free layer 624 may be formed of Ni-Fe having a thickness in the range of about 2-5 nm, or alternatively, may be formed of a sub-layer of Ni-Fe having a thickness in the range of 2-5 nm deposited on the common electrode 642 and an interface layer of Co having a thickness in the range of 0.5 nm deposited on the Ni-Fe sub-layer.
- the second tunnel barrier layer 626 is formed of A1.0-, by depositing and then plasma oxidizing an 0.8-2 nm Al layer on the second free layer 624.
- the ferromagnetic second pinned layer 628 may be formed of Ni-Fe having a thickness in the range of 2-5 nm deposited on the second tunnel barrier layer 626, or alternatively, may be formed of an interface layer of Co having a thickness of about 0.5 nm deposited on the second tunnel barrier layer 626 and a sub-layer of Ni-Fe having a thickness in the range of 2-5 nm deposited on the Co interface layer.
- the AFM2 layer 630 formed of Ni r -Mn , or alternatively, of Pt-Mn or Pt-Pd-Mn, having a thickness of about 10 nm is deposited on the second pinned layer 628.
- the cap layer 632 formed of tantalum (Ta) having a thickness in the range of 2-5 nm is deposited on the AFM2 layer 630.
- the second MTJ stack 604 is defined in the central region 662 by depositing a photoresist and using photolithography and ion milling processes well known in the art.
- the second insulator layers 654 and 656 can now be deposited on the exposed common electrode 642 in the end regions 664 and 666, respectively.
- the second insulator layers 654 and 656 are formed of Al 0, by depositing and then plasma oxidizing an Al layer having a thickness approximately equal to the total thickness of the second MTJ stack 604.
- the photoresist protecting the second MTJ stack 604 is then removed and the second shield (S2) 644 of Ni-Fe having a thickness in the range of 500-1000 nm is deposited on the exposed second MTJ stack 604 and on the second insulator layers 654 and 656.
- the first shield (SI) 640 and the common electrode 642 provide electrical connections for the flow of sensing current II to the first MTJ stack 602.
- the flow of the sensing current II is in a direction perpendicular to the plane of the first tunnel barrier layer 620 as shown by arrow 670.
- First insulator layers 650 and 652 provide electrical insulation in the end regions 664 and 666, respectively, preventing shunting of the sensing current II around the first MTJ stack 602.
- the second shield ( ⁇ 2) 644 and the common electrode 642 provide electrical connections for the flow of sensing current 12 to the second MTJ stack 604.
- Second insulator layers 654 and 656 provide electrical insulation in the end regions 664 and 666, respectively, preventing shunting of the sensing current 12 around the second MTJ stack 604.
- the magnetizations of the pinned layers 618 and 628 of the first MTJ stack 602 and the second MTJ stack 604, respectively, must be fixed in an antiparallel orientation by an initialization process.
- the magnetizations of pinned layers 618 and 628 fixed perpendicular to the ABS and antiparallel with respect to each other as shown by arrows 619 and 629 (head and tail of arrows pointing out of and into the plane of the paper, respectively) , respectively, respectively, the magnetoresistive signal generated due to an external field from the disk by the first MTJ stack 602 will differ in phase by 180° with respect to the magnetoresistive signal generated due to the same external field by the second MTJ stack 604.
- the AFMl layer 612 material is chosen to have a blocking temperature (the blocking temperature is the temperature at which the exchange coupling becomes zero) lower than the blocking temperature of the AFM2 layer 630 material.
- the AFM2 layer 630 is first oriented by heating the MTJ sensor 600 above the blocking temperature, T Tha , of the AFM2 material (the blocking temperature of Ni,, -Mn,, ( is approximately 250° C) and then with an external magnetic field greater than about 5000 Oe applied perpendicular to the ABS, cooling the sensor.
- the AFMl layer 612 is then reset by locally heating the AFMl material above its blocking temperature, T B1 , (the blocking temperature of Mn,, -Fe,,, is about 150° C ) by applying voltage pulse across the MTJ1 stack 602 to cause resistive heating to a temperature above T M but below T, and then with an external magnetic field greater than about 5000 Oe applied perpendicular to the ABS and antiparallel to the field applied to set the AFM2 layer 630, cooling the sensor.
- T B1 the blocking temperature of Mn,, -Fe,, is about 150° C
- AFMl layer 612 and the AFM2 layer 630 are antiparallel in order to set the magnetizations of the first pinned layer 618 and the second pinned layer 628 antiparallel with respect to each other.
- Fig. 7 shows a schematic diagram of a thermal asperity reduction circuitry 700 according to the preferred embodiment of the present invention.
- Circuitry 700 comprises MTJ sensor 600 having first shield (SI) 640 and second shield (S2) 644 electrodes and a common electrode 642, a first current source 710, a second current source 712, and a differential circuit 730.
- the differential circuit 730 includes a first input terminal 733, a second input terminal 735, an output terminal 740, and a ground (reference) terminal 738.
- the first current source 710 is connected to the first shield (SI) 640 and to the common electrode 642 to provide the sense current II to the first MTJ stack 602.
- the second current source 712 is connected to the second shield (S2) 644 and to the common electrode 642 to provide the sense current 12 to the second MTJ stack 604.
- Currents II and 12 are adjusted so that with no external magnetic field (signal field) present, the product of the first MTJ stack resistance times II (i.e, the voltage drop across the first MTJ stack) is equal to the product of the second MTJ sensor resistance times 12 (the voltage drop across the second MTJ stack) .
- the first shield (SI) 640 is also connected, via the wire 732, to the first input terminal 733 of the differential circuit 730 and the second shield (S2) 644 is also connected, via the wire 734, to the second input terminal 735 of the differential circuit 730.
- the common electrode is preferably connected to a common wiring pad 714.
- the common pad 714 in turn is connected, via wire 736, to the ground 738 of the differential circuit 730.
- the output terminal 740 of the differential circuit 730 is then connected to the data recording channel 720 for further processing of the detected signals according to the description of Fig. 4.
- the recording channel 720 and the differential circuit 730 together are referred to as the recording system 750.
- Differential circuit 730 is preferentially a silicon-based high- speed differential amplifier integrated into the same silicon chip that the data recording channel 720 is integrated into. Differential circuit 730 further has a differential gain such that the output voltage at node 740 due to the difference between the voltages applied to its first and second input terminals 733 and 735 can be expressed in terms of:
- V 740 A*(V - V 735 )
- A is the differential gain of the differential circuit 730.
- the design of a differential amplifier is known to one of ordinary skill in the art .
- Figs. 8a, 8b, and 8c there are shown the voltage signals present at the first input terminal 733, the second input terminal 735, and the output terminal 740, respectively, of the differential amplifier 730 under DC bias condition, in the presence of data fields from a magnetic disk, and in the presence of a thermal asperity and data fields from a magnetic disk.
- the voltage at the first input terminal 733 is a DC voltage 810 which is R ⁇ ,, * II
- the voltage at the second input terminal 735 is a DC voltage 820 which is R mj ⁇ * 12
- the voltage at the output terminal 740 is a DC voltage 830.
- the voltage across the MTJ stacks changes because of the change in the resistances of the tunnel barrier layers 620 and 626.
- the voltage developed across the first MTJ stack 602 as a result of the change in the resistance of the first tunnel barrier layer 620 in the presence of a data field is represented in the form of an AC signal. Consequently, the voltage signal at the first input terminal 733 which is connected to the first shield 640 is voltage 812 which has an AC component 814 and a DC component 810.
- the AC component is due to the change of resistance of the first tunnel barrier layer 620 in the presence of the field from the disk and is:
- V 81 II * ⁇ Mrault + II * R m date.
- the voltage developed across the second MTJ stack 604 as a result of the change in the resistance of the second tunnel barrier layer 626 in the presence of a data field is represented in a form of an AC signal. Consequently, the voltage signal at the second input terminal 735 which is connected to the second shield 644 is voltage 822 which has an AC component 824 and a DC component 820.
- the AC component is due to the change of resistance of the second tunnel barrier layer 626 in the presence of the field from the disk and is:
- V 8? ,, 12 * ⁇ R MT ,, + 12 * R m .,.
- the voltage at the output terminal 740 will be equal to the difference between the voltage signals at the first and second input terminals 733 and 735 times the differential gain of the circuit 730 as shown below:
- V 74 o A* ( V raw , - V 73S )
- V ⁇ 32 A* ( V 81 . - V 82? )
- V 83? A* ( I I * ⁇ R MT , U + I I * I , , - 12 * ⁇ R MI ,,. - 12 * R MTJ , ) .
- V 83? A* (II * ⁇ R , - 12 * ⁇ R HTJ ,) .
- the amplitude of the AC voltage 834 at the output terminal 740 is the sum.of the amplitudes of the AC voltages 814 and 824 at the input terminals 733 and 735.
- the voltage at the first input terminal 733 would be a voltage 842 which has an AC component 844 and a DC component 840.
- the AC component is due to the change in the resistance of the first tunnel barrier layer 620 in the presence of the field from the disk and is II * ⁇ R m ,,, .
- the DC component 840 which is represented by a sudden shift in the DC voltage followed by an exponential decay in the shifted DC voltage is II * Rriz T I such that:
- the voltage at the second input terminal 735 would be a voltage 852 which has an AC component 854 and a DC component 850 such that:
- the voltage at the output terminal 740 will be equal to the difference between the voltage signals at the first and second input terminals 733 and 735 times the differential gain of the circuit 730 as shown below:
- V,,,, A* (II * ⁇ R m .,, + II * R Mr . prepare - 12 * ⁇ R m .,, - 12 * R MTJ2 ).
- Fig. 9 is a graph showing portions A, B and C of Figs. 8a, 8b and 8c, respectively, to better illustrate the phase relationships of the voltages at the input terminals 733 and 735 and the resulting voltage at the output terminal 740 of the differential circuit 730.
- V 86? A* (II * ⁇ R.-,,,, - 12 * ⁇ R m ..,.)
- the amplidude of the AC voltage 864 at the output terminal 740 is the sum of the amplitudes of the AC voltages 844 and 854 at the input terminals 733 and 735, respectively, as shown in curve C of Fig. 9.
- a narrow signal spike 870 is usually present at the output terminal 740 at the onset of the sudden shift in the DC voltage due to finite physical mismatches present between: (1) the resistances of the first and second MTJ stacks 602 and 604, (2) the resistance of the first and second MTJ stack leads, (3) the first current source 710 and the second current source 712, and (4) internal mismatches of the differential circuit.
- this spike is generally only a few bits long which does not cause any loss of data.
- MTJ sensor 1000 is substantially the same a MTJ sensor 600 described above except that MTJ sensor 1000 includes a first MTJ stack 1002 formed in the central region 662 having a laminated antiparallel (AP) pinned layer 1013.
- ABS air bearing surface
- the laminated AP-pinned layer 1013 comprises a first ferromagnetic sublayer (FMl) 1018 of Ni-Fe having a thickness in the range of 2-5 nm, a second ferromagnetic sublayer (FM2) 1014 of Ni-Fe having a thickness in the range of 2-5 nm, and an antiparallel coupling (APC) layer 1016 disposed between the FMl sublayer 1018 and the FM2 sublayer 1014.
- the APC layer 1016 is formed of a non-magnetic material, preferably ruthenium (Ru) , that allows the FMl sublayer 1018 and the FM2 sublayer 1014 to be strongly coupled together antiferromagnetically.
- Ru ruthenium
- the FM2 sublayer 1014 is formed on the first antiferromagnet (AFMl) layer 612.
- the AFMl layer 612 is exchange coupled to the FM2 sublayer 1014 providing an exchange field to pin the magnetization direction of the FM2 sublayer 1014 perpendicular to the ABS.
- the first tunnel barrier layer 620 is formed on the FMl sublayer 1018.
- a novel feature of the MTJ sensor 1000 of the alternative embodiment of the invention using the laminated AP-pinned layer 1013 is that the initialization process needed to fix the magnetization directions of the pinned layers of the first MTJ stack 1002 and the second MTJ stack 604 antiparallel with respect to each other is simplified.
- the initialization process for MTJ sensor 1000 comprises a step in which the magnetization directions of both AFMl 612 and AFM2 630 are set in the same direction by heating and then cooling the entire MTJ sensor 1000 above the blocking temperatures of both the AFMl and the AFM2 materials with a 5000 Oe field applied in the desired direction.
- the FM2 sublayer 1014 and the second pinned layer 628 will have their magnetization directions 1015 and 629, respectively, oriented perpendicular to the ABS and parallel to one another. Because of the APC layer 1016, the magnetization direction 1019 of the FMl sublayer 1018 will be oriented perpendicular to the ABS and antiparallel to the magnetization direction 1015 of the FM2 sublayer 1014 and perpendicular to the magnetization direction 629 of the second pinned layer 628.
- the magnetoresistive signal generated due to an external field from the disk by the first MTJ stack 1002 will differ in phase by 180T with respect to the magnetoresistive signal generated due to the same external field by the second MTJ stack 604.
- both the AFMl layer 612 and the AFM2 layer 630 are initialized by a single heating step, the blocking temperature of the AFMl material is no longer required to be lower than the blocking temperature of the AFM2 material. Therefore, in the alternate embodiment both the AFMl layer 612 and the AFM2 layer 630 may be chosen from a group of materials consisting of Mn-Fe, Ni-Mn, Ir-Mn, Pt-Mn and Pt-Pd-Mn.
- MTJ sensor 600 in Fig. 7 is replaced by the alternative MTJ sensor 1000 to provide for thermal asperity detection and reduction utilizing the thermal asperity reduction circuitry 700.
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU10550/00A AU1055000A (en) | 1998-11-09 | 1999-11-01 | Disk drive with thermal asperity reduction circuitry using magnetic tunnel junction sensor |
DE69919391T DE69919391T2 (en) | 1998-11-09 | 1999-11-01 | PLATE DRIVE WITH THERMAL INSULATION DISCONNECTION, USING A MAGNETIC TUNNEL LIMIT SENSOR |
AT99954109T ATE273521T1 (en) | 1998-11-09 | 1999-11-01 | PLATE DRIVE WITH THERMAL UNEVEN CANCELING CIRCUIT USING A MAGNETIC TUNNEL LIMIT SENSOR |
JP2000581469A JP4220676B2 (en) | 1998-11-09 | 1999-11-01 | Magnetic tunnel junction sensor and disk drive system |
EP19990954109 EP1135696B1 (en) | 1998-11-09 | 1999-11-01 | Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
HU0104041A HUP0104041A3 (en) | 1998-11-09 | 1999-11-01 | Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/189,321 | 1998-11-09 | ||
US09/189,321 US6185079B1 (en) | 1998-11-09 | 1998-11-09 | Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000028342A1 true WO2000028342A1 (en) | 2000-05-18 |
Family
ID=22696818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1999/003594 WO2000028342A1 (en) | 1998-11-09 | 1999-11-01 | Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
Country Status (10)
Country | Link |
---|---|
US (1) | US6185079B1 (en) |
EP (1) | EP1135696B1 (en) |
JP (1) | JP4220676B2 (en) |
KR (1) | KR100463493B1 (en) |
AT (1) | ATE273521T1 (en) |
AU (1) | AU1055000A (en) |
DE (1) | DE69919391T2 (en) |
HU (1) | HUP0104041A3 (en) |
SG (1) | SG81323A1 (en) |
WO (1) | WO2000028342A1 (en) |
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1999
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- 1999-11-01 WO PCT/GB1999/003594 patent/WO2000028342A1/en active IP Right Grant
- 1999-11-01 EP EP19990954109 patent/EP1135696B1/en not_active Expired - Lifetime
- 1999-11-01 HU HU0104041A patent/HUP0104041A3/en unknown
- 1999-11-01 AU AU10550/00A patent/AU1055000A/en not_active Abandoned
- 1999-11-01 SG SG9905413A patent/SG81323A1/en unknown
- 1999-11-01 AT AT99954109T patent/ATE273521T1/en not_active IP Right Cessation
- 1999-11-01 JP JP2000581469A patent/JP4220676B2/en not_active Expired - Fee Related
- 1999-11-01 DE DE69919391T patent/DE69919391T2/en not_active Expired - Fee Related
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DATABASE WPI Section EI Week 199935, Derwent World Patents Index; Class S01, AN 1999-410789, XP002130411 * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004519859A (en) * | 2001-03-15 | 2004-07-02 | マイクロン テクノロジー インコーポレイテッド | Self-aligned and trenchless magnetoresistive random access memory (MRAM) structure with MRAM structure confined by sidewalls |
EP3217445B1 (en) * | 2015-02-12 | 2019-09-04 | Asahi Kasei Microdevices Corporation | Sensor device |
Also Published As
Publication number | Publication date |
---|---|
US6185079B1 (en) | 2001-02-06 |
AU1055000A (en) | 2000-05-29 |
HUP0104041A2 (en) | 2002-03-28 |
ATE273521T1 (en) | 2004-08-15 |
JP2002529926A (en) | 2002-09-10 |
EP1135696A1 (en) | 2001-09-26 |
EP1135696B1 (en) | 2004-08-11 |
JP4220676B2 (en) | 2009-02-04 |
HUP0104041A3 (en) | 2002-06-28 |
KR100463493B1 (en) | 2004-12-29 |
DE69919391D1 (en) | 2004-09-16 |
DE69919391T2 (en) | 2005-09-08 |
KR20010075690A (en) | 2001-08-09 |
SG81323A1 (en) | 2001-06-19 |
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