WO1999063571A1 - Pedestal insulator for a pre-clean chamber - Google Patents
Pedestal insulator for a pre-clean chamber Download PDFInfo
- Publication number
- WO1999063571A1 WO1999063571A1 PCT/US1999/011630 US9911630W WO9963571A1 WO 1999063571 A1 WO1999063571 A1 WO 1999063571A1 US 9911630 W US9911630 W US 9911630W WO 9963571 A1 WO9963571 A1 WO 9963571A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- insulator
- beveled portion
- support pedestal
- process kit
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 44
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 77
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 36
- 239000000463 material Substances 0.000 abstract description 25
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 235000012239 silicon dioxide Nutrition 0.000 description 23
- 239000010453 quartz Substances 0.000 description 22
- 238000004140 cleaning Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Definitions
- the present invention generally relates to etch chambers. More particularly, the present invention relates to an insulator for a substrate support member in an etch chamber.
- substrate processing systems In order to fabricate a complete IC, typically several substrate processing systems are used, with each system performing a particular step or series of steps in the overall fabrication process.
- the substrates are transferred between the systems at ambient conditions.
- the ambient environment is maintained very clean to prevent contamination of the substrates as they are transferred between systems.
- the substrates may even be transferred in completely enclosed cassettes in order to further prevent contamination thereof.
- a problem is that it is not possible to prevent the oxygen in the ambient air from forming oxides on the surfaces of the substrates.
- oxidized surfaces are undesirable, and the surface oxides, primarily silicon dioxide and metal oxides, need to be removed or etched from the surfaces of the substrates, in a pre-processing cleaning step, before the substrates are subjected to the primary process of the system such as physical vapor deposition and chemical vapor deposition.
- substrate surface features such as trenches, contacts or vias into which metal conductors, such as tungsten, aluminum or copper, are to be deposited need to be cleaned in order to assure a very low interface resistance between layers of deposition.
- FIG. 1 is a simplified schematic view of a pre-clean chamber.
- the pre-clean chamber 10 has a substrate support member 12 disposed in a chamber enclosure 14 under a quartz dome 16.
- the substrate support member 12 typically includes a central pedestal plate 18 disposed within a recess 20 on a quartz insulator plate 22.
- the upper surface of the central pedestal plate 18 typically extends above the upper surface 23 of the quartz insulator plate 22.
- a gap 24 of about 0.035 inches is formed between a bottom surface 27 of the substrate 26 and the top surface 23 of the quartz insulator plate 22.
- the substrate 26 is placed on the central pedestal plate 18 and contained thereon by locating pin 32.
- the peripheral portion of the substrate 26 extends over the quartz insulator plate 22 and overhangs the upper edge of the quartz insulator plate 22.
- a beveled portion 28 of the quartz insulator plate 22 is disposed partially below this overhanging peripheral portion of the substrate 26, and a lower annular flat surface 30 extends from the lower outer edge of the beveled portion 28.
- the quartz insulator plate 22 is typically a part of a process kit that system operators periodically replace during routine maintenance. It is desirable that a process kit has a long useful lifetime, so that the downtime of the system will be a small percentage of the overall processing time.
- the primary purpose of the etch cleaning is to remove oxides that form on the surface of the substrate typically when the substrate was subjected to ambient air conditions while being transported to the vacuum processing system.
- the oxidized surface material is silicon oxide, but metal deposited on the surface of the substrate will have formed metal oxides on the surface as well.
- the etched material sputters off the substrate surface and forms a film on the process kit, including the exposed surfaces of the quartz insulator plate.
- the film forms on the process kit surfaces, its density may change, resulting in stress on the film. This stress, along with differences in the coefficients' of expansion of the materials in the film, can result in delamination, or flaking, of the film from the surface of the process kit.
- the process kit is typically replaced after a certain number of substrates have been cleaned in the system. The selected number of substrates that can be processed before a process kit replacement generally corresponds to a permissible thickness of the film formed on the surfaces of the process kit before flaking occurs.
- the process kit has a long useful lifetime, so that the downtime of the system will be a small percentage of the overall processing time.
- the lifetime of a process kit is specified as a particular thickness of total etched material from the substrate because it is easier to measure the amount of material cumulatively etched off of the substrate surface than to measure the non-uniform film thickness on the process kit surfaces.
- the lifetime of a process kit varies according to the material being etched from the substrate. For example, the lifetime of the process kit for etching SiO 2 typically is specified as 120 ⁇ m of total etched material from the substrates, corresponding to about
- the actual lifetime for a process kit frequently falls short of the desired or specified lifetime because materials (other than the material specified as the lifetime of the process kit) are etched during the actual etching/cleaning process, and during actual process, a process kit may last for only 20-30 ⁇ m of the cumulative etched material. These short lifetimes cause the system operator to have to service the system more often. Additionally, an unexpectedly short useful lifetime for a process kit may result in flakes of material falling onto a substrate, damaging many of the ICs formed on the substrate, while the system operator assumes that the process kit is working properly. Thus, several substrates may pass through the system before the system operator is aware that many of the devices are damaged or contaminated.
- the invention generally provides an apparatus that minimizes backside sputtering of the substrate in a pre-clean chamber and other etch chambers.
- the invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit.
- One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion between about 10° and about 60° extending from a circumferential edge of the substrate.
- a gap about 0.015 inches high is formed between an upper annular flat surface of the insulator and a lower surface of the substrate.
- the beveled portion of the insulator is treated to provide better adherence of the sputtered material from the etch/cleaning process.
- a substrate processing chamber comprising an etch/pre-clean chamber and a substrate support member comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.
- Figure 1 is a simplified schematic view of a pre-clean chamber.
- Figure 2 is a cross sectional view of an etch/pre-clean chamber having a substrate support member according to the invention.
- FIG. 2 is a cross sectional view of an etch/pre-clean chamber 40 having a substrate support member 42 according to the invention.
- the substrate support member 42 is disposed within the chamber enclosure 41 and generally comprises a pedestal plate 44 disposed within a recess 46 on a top surface of a quartz insulator plate 48.
- the top surface 50 of the pedestal plate 44 extends slightly higher than the upper annular surface 52 of the quartz insulator plate 48 and is in contact with a central portion of the bottom surface or backside 58 of the substrate 54.
- the pedestal plate 44 comprises titanium and is connected to a power supply (not shown) to provide the necessary bias for etch-cleaning.
- the peripheral portion of the substrate 54 extends above the upper annular surface 52 of the quartz insulator plate 48 and forms a gap 56 between the bottom surface 58 of the substrate 54 and the upper annular surface 52 of the quartz insulator plate 48.
- the gap 56 is reduced to about 0.015 inches
- the backside 58 of the substrate 54 is practically covered and only a 0.015 inch gap separates the bottom surface 58 of the substrate 54 and the upper annular surface 52 of the quartz insulator plate 48. Thus, sputtering from the backside 58 of the substrate 54 is minimized because the plasma ions are obstructed from contacting and reacting with the backside of the substrate.
- a beveled portion 60 of the quartz insulator plate 48 extends from the outer edge of the upper annular surface 52 in a downward slope.
- the slope of the bevel is between about 10 degrees and about 60 degrees from a horizontal plane. As shown in Figure 2, the slope is about 45 degrees.
- the beveled portion 60 of the quartz insulator plate 48 minimizes deposition of the sputtered material onto the insulator plate 48 because the material sputtered from the substrate 54 does not adhere well onto the beveled portion as compared to a flat annular portion of the prior art insulator designs. It is also believed that the plasma activity is reduced on the beveled surface.
- the process kit including the quartz insulator plate, obtains a longer useful life.
- the quartz insulator plate 48 includes an outer annular flat surface 62 extending outwardly from the lower outer edge of the beveled portion 60. Furthermore, the exposed surface of the quartz insulator plate 48 can be finished or treated to improve adhesion of the sputtered material so that the flaking of deposited material is minimized.
- the process for cleaning the substrate 54 in the pre-clean chamber 40 generally involves a sputter-etching process using the substrate 54 as the sputtering target.
- a cleaning gas such as argon is flowed through the chamber 40, and a plasma is struck in the chamber with a bias power applied to the substrate in the range of about 150W to about 450W.
- a RF power is applied to the chamber through coils 64 disposed outside of the quartz dome 66.
- the pre-clean chamber 40 600V, with a bias power of about 100W to about 300W, accelerates the ions toward the substrate 54.
- the pressure in the pre-clean chamber 40 during sputtering is on the order of about 0.4 mTorr to about 0.5 mTorr. Under these conditions, the pre-clean chamber
- a process kit can extend its useful life up to twice as long as previous insulator designs.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007013579A KR20010043965A (en) | 1998-06-02 | 1999-05-26 | Pedestal insulator for a pre-clean chamber |
EP99924517A EP1088326A1 (en) | 1998-06-02 | 1999-05-26 | Pedestal insulator for a pre-clean chamber |
JP2000552702A JP4480271B2 (en) | 1998-06-02 | 1999-05-26 | Pedestal insulator for pre-clean chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/088,759 | 1998-06-02 | ||
US09/088,759 US6077353A (en) | 1998-06-02 | 1998-06-02 | Pedestal insulator for a pre-clean chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999063571A1 true WO1999063571A1 (en) | 1999-12-09 |
Family
ID=22213283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/011630 WO1999063571A1 (en) | 1998-06-02 | 1999-05-26 | Pedestal insulator for a pre-clean chamber |
Country Status (6)
Country | Link |
---|---|
US (1) | US6077353A (en) |
EP (1) | EP1088326A1 (en) |
JP (1) | JP4480271B2 (en) |
KR (1) | KR20010043965A (en) |
TW (1) | TW467959B (en) |
WO (1) | WO1999063571A1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
KR100408259B1 (en) * | 1998-11-04 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | Process Chamber |
US6439244B1 (en) * | 2000-10-13 | 2002-08-27 | Promos Technologies, Inc. | Pedestal design for a sputter clean chamber to improve aluminum gap filling ability |
US6652713B2 (en) * | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
US6944006B2 (en) * | 2003-04-03 | 2005-09-13 | Applied Materials, Inc. | Guard for electrostatic chuck |
US8409355B2 (en) * | 2008-04-24 | 2013-04-02 | Applied Materials, Inc. | Low profile process kit |
US20090288942A1 (en) * | 2008-05-20 | 2009-11-26 | Scott Arthur Cummings | Particulate capture in a plasma tool |
JP5601794B2 (en) * | 2009-05-29 | 2014-10-08 | 株式会社東芝 | Plasma etching equipment |
SG10201407637TA (en) * | 2009-11-30 | 2015-01-29 | Lam Res Corp | An electrostatic chuck with an angled sidewall |
US10593521B2 (en) * | 2013-03-12 | 2020-03-17 | Applied Materials, Inc. | Substrate support for plasma etch operations |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
JP2022125017A (en) * | 2021-02-16 | 2022-08-26 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus with flow control ring, and substrate processing method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0693771A1 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Electrostatic chuck for a substrate in a process chamber |
JPH0878321A (en) * | 1994-06-30 | 1996-03-22 | Tokyo Electron Ltd | Treatment method and treatment equipment |
EP0732728A2 (en) * | 1995-03-08 | 1996-09-18 | Applied Materials, Inc. | Plasma reactor and pedestal for supporting semiconductor substrate in a plasma reactor |
JPH0945758A (en) * | 1995-07-31 | 1997-02-14 | Kyocera Corp | Attraction chuck |
US5698070A (en) * | 1991-12-13 | 1997-12-16 | Tokyo Electron Limited | Method of etching film formed on semiconductor wafer |
US5826129A (en) * | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
JPH06306599A (en) * | 1993-04-23 | 1994-11-01 | Toshiba Corp | Manufacturing device for semiconductor element |
JPH0711446A (en) * | 1993-05-27 | 1995-01-13 | Applied Materials Inc | Suscepter device for vapor growth |
US5573596A (en) * | 1994-01-28 | 1996-11-12 | Applied Materials, Inc. | Arc suppression in a plasma processing system |
KR0183823B1 (en) * | 1996-02-22 | 1999-04-15 | 김광호 | Semiconductor equipment having stage for wafer loading |
-
1998
- 1998-06-02 US US09/088,759 patent/US6077353A/en not_active Expired - Lifetime
-
1999
- 1999-05-26 JP JP2000552702A patent/JP4480271B2/en not_active Expired - Fee Related
- 1999-05-26 EP EP99924517A patent/EP1088326A1/en not_active Withdrawn
- 1999-05-26 KR KR1020007013579A patent/KR20010043965A/en not_active Application Discontinuation
- 1999-05-26 WO PCT/US1999/011630 patent/WO1999063571A1/en not_active Application Discontinuation
- 1999-05-31 TW TW088109002A patent/TW467959B/en not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698070A (en) * | 1991-12-13 | 1997-12-16 | Tokyo Electron Limited | Method of etching film formed on semiconductor wafer |
JPH0878321A (en) * | 1994-06-30 | 1996-03-22 | Tokyo Electron Ltd | Treatment method and treatment equipment |
US5826129A (en) * | 1994-06-30 | 1998-10-20 | Tokyo Electron Limited | Substrate processing system |
EP0693771A1 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Electrostatic chuck for a substrate in a process chamber |
EP0732728A2 (en) * | 1995-03-08 | 1996-09-18 | Applied Materials, Inc. | Plasma reactor and pedestal for supporting semiconductor substrate in a plasma reactor |
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
JPH0945758A (en) * | 1995-07-31 | 1997-02-14 | Kyocera Corp | Attraction chuck |
Also Published As
Publication number | Publication date |
---|---|
TW467959B (en) | 2001-12-11 |
JP4480271B2 (en) | 2010-06-16 |
EP1088326A1 (en) | 2001-04-04 |
KR20010043965A (en) | 2001-05-25 |
JP2002517884A (en) | 2002-06-18 |
US6077353A (en) | 2000-06-20 |
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