WO1999007122A1 - Biphase modulator with balun design - Google Patents
Biphase modulator with balun design Download PDFInfo
- Publication number
- WO1999007122A1 WO1999007122A1 PCT/US1998/015617 US9815617W WO9907122A1 WO 1999007122 A1 WO1999007122 A1 WO 1999007122A1 US 9815617 W US9815617 W US 9815617W WO 9907122 A1 WO9907122 A1 WO 9907122A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transmission line
- microwave
- approximately
- modulator circuit
- biphase modulator
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
- H04L27/2032—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner
- H04L27/2035—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using a single or unspecified number of carriers
- H04L27/2039—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using a single or unspecified number of carriers using microwave technology
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
- H03D9/0633—Transference of modulation using distributed inductance and capacitance by means of diodes mounted on a stripline circuit
- H03D9/0641—Transference of modulation using distributed inductance and capacitance by means of diodes mounted on a stripline circuit located in a hollow waveguide
Definitions
- This invention relates to biphase modulators, such as a double-balanced microwave mixer, with a balun design. More particularly, this invention discloses a new balun design, in which a broadside coupled, suspended substrate transmission line has a short-circuited, high impedance transmission line that is short-circuited to ground and attached to the unbalanced end of a coupled-line balun.
- biphase modulators such as those operating at X-band or K-band frequencies
- Typical double-balanced microwave mixers and biphase modulators are composed of rings of Schottky diodes and baluns .
- the baluns are transmission line structures that transform an unbalanced system impedance to or from a balanced diode impedance, thereby isolating balance and unbalanced circuitry while allowing signal information to travel between them.
- Typical balun designs used with biphase modulators are disclosed in Sturdivant, R., Balun Designs for Wireless, ... Mixers, Amplifiers, Antennas, Applied Microwave, summer 1993.
- balun typically used for this application is a broadside coupled, suspended transmission line with a short-circuited quarter-wave, high impedance transmission line that is attached to the balanced end of the coupled line.
- two short-circuited lines, or shunt inductors may be used at the balanced end of the balun as a shorting transformer.
- a short- circuited line provides a direct current return for the diode currents, but has the detrimental effect of decreasing the effective bandwidth of the balun if the length of the line is not carefully chosen and precisely manufactured, and also degrades the phase and amplitude balances of the modulator.
- An effective biphase modulator has several attributes . It is important that the two binary states of the modulator are balanced. Ideally the amplitudes of the two states are equal to each other, and the phase difference is exactly 180 degrees. However, the precise balance of the amplitude and phase between the two binary states is limited by any asymmetry of the balun structure. The balance is also limited by stray reactances introduced by the ring of Schottky diodes . In space or satellite applications, circuitry employing biphase modulators are often subjected to tremendous stress, such as the severe vibrations and mechanical shock experienced during a launch. A syntactic foam powder is often utilized to fill the cavity around the circuitry to prevent damage to the circuit components.
- the present invention relates to an improvement over the classic balun structure typically utilized in the biphase modulator of a microwave circuit .
- the balun structure being disclosed provides superior performance by maximizing electromagnetic symmetry in the circuit and minimizing stray reactances at the diode mixing plane.
- a digital biphase modulator may also be implemented as a demodulator. Based on the following disclosure, one could easily implement the described invention as a demodulator. It is also apparent to those skilled in the art of microwave mixers that multiple biphase modulators may be combined to achieve higher order modulation schemes . For example, one may form modulators with multiple phase and amplitude states and the corresponding demodulation configurations using the invention described herein.
- Fig. 1 is a schematic diagram of an embodiment of the microwave biphase modulator.
- Fig. 2A is a diagram of a first upward-facing layer of a physical assembly embodiment of the circuit in Fig. 1.
- Fig. 2B is a diagram of a second downward-facing layer of a physical assembly embodiment of the circuit in Fig. 1, that is situated on top of the first upward-facing layer .
- Fig. 2C is a diagram of a side cross-section of a physical assembly embodiment of the circuit in Fig. 1.
- Fig. 3A is a collection of graphical plots summarizing typical test data of the circuit for transmission in the forward direction (i.e. input signal is applied at RF IN and output signal is at RFQU T'
- Fig. 3B is a collection of graphical plots summarizing typical test data of the circuit for transmission in the reverse direction (i.e. input signal is applied at RF 0 u ⁇ an ⁇ output signal is at RF IN .
- input signal is applied at RF 0 u ⁇ an ⁇ output signal is at RF IN .
- transmission line 1 provides a direct current path to ground 0.
- Transmission line 2A which is a through line
- transmission line 2B which is a coupled line connected to ground at its unbalanced end, together with transmission line 1, form a first balun 9.
- Microwave signal RF IN is introduced at RF input port 8 at the intersection of transmission line 1 and transmission line 2A, and reaches a diode ring 10 composed of diodes 3A, 3B, 3C and 3D.
- Balun 9 affects the bandwidth of operation for the circuit .
- Balun 9 also determines the input impedance match for the incoming microwave signal at RF input port 8 , which is typically between 25 and 100 ohms, and preferably approximately 50 ohms.
- Balun 9 also transforms the unbalanced input impedance at RF input port 8 to the balanced diode impedance at diode ring 10.
- Balun 9 also splits the microwave signal 180 degrees out of phase.
- the underlying theory of how the properties of baluns affect impedances and signals is disclosed in Collin, R. E., Foundations for Microwave Engineering, McGraw Hill, 1996.
- Incoming data DATA IN is introduced at data input port 12 and is filtered through low-pass filter 7.
- Low-pass filter 7 determines the bandwidth for the incoming data by limiting the frequencies that may pass through, and isolates the microwave signal from data input port 12.
- Coupled transmission lines 4A and 4B, coupled transmission lines 5A and 5B, and coupled transmission lines 6A and 6B form a second balun 11 with a virtual ground at the point where transmission lines 4A and 5A connect with low-pass filter 7.
- Balun 11 affects the bandwidth of operation for the circuit, and is ideally set to operate at the same band of operation as balun 9.
- Balun 11 also determines the modulator's output impedance match at RF output port 13 , which is typically between 25 and 100 ohms, and preferably approximately 50 ohms . Balun 11 also transforms the balanced diode impedance of diode ring 10 to the unbalanced output impedance at RF ou ⁇ - Balun 11 further recombines the microwave signal 180 degrees out of phase.
- the microwave signal RF IN introduced at RF input port 8 travels down the length of transmission line 2A and transmission line 2B to connect with diode ring 10 at connections 14 and 16.
- Incoming data signal DATA ⁇ N introduced at data input port 12 commutates the microwave signal from first balun 9 to transmission lines 4A and 5A of second balun 11. The effect of the commutation is to change the insertion phase polarity of the microwave signal by 180 degrees through diode biasing as described below.
- Biasing of diodes 3A, 3B, 3C, and 3D in diode ring 10 are determined by the polarity of the bipolar data signal DATA IN introduced at data input port 12 and the resulting polarity at connections 15 and 17.
- diode 3A is forward biased and diode 3B is reverse biased to ground 0 through transmission line 1.
- diode 3C is forward biased and diode 3D is reverse biased through transmission line 2B .
- the biasing of diodes 3A, 3B, 3C and 3D due to positive polarity data has the effect of connecting transmission line 2A to transmission line 4A and connecting transmission line 2B to transmission line 5A.
- the microwave signal is transferred through transmission lines 6A and 6B to RF output port 13.
- the signal RF 0U ⁇ at RF output port 13 is then 180 degrees out of phase with the negative polarity insertion phase.
- diode 3B is forward biased and diode 3 is reverse biased to ground 0 through transmission line 1.
- diode 3D is forward biased and diode 3C is reverse biased through transmission line 2B .
- the biasing of diodes 3A, 3B, 3C, and 3D due to negative polarity data has the effect of connecting transmission line 2A to transmission line 5A and connecting transmission line 2B to transmission line 4A.
- the microwave signal is transferred through transmission lines 6A and 6B to RF output port 13.
- the signal RF 0 u ⁇ at RF output port 13 is then 180 degrees out of phase with the positive polarity insertion phase.
- FIGs. 2A, and 2B, and 2C A preferred embodiment of the invention is illustrated in Figs. 2A, and 2B, and 2C.
- the dimensions and other attributes of the components disclosed below are based on calculations taken from Wheeler, H., Transmission-Line Properties of Parallel Strips Separated by a Dielectric Sheet, IEEE Transactions on Microwave Theory and Techniques, March 1965, pp. 172-185.
- This particular embodiment may be used for carrier waves having frequencies between approximately 3 GHz and approximately 16 GHz. However, it is optimized for an 8.2 GHz carrier wave. It is apparent to those skilled in the art that one may use the calculations disclosed in the references above to effect designs that function at other frequencies .
- the modulator is a planar microwave integrated circuit, printed on an approximately 0.005 inches thick PTFE/glass substrate clad with copper.
- the relative permittivity of the substrate is between 1 and 4, preferably 2.2, and the copper thickness is approximately 0.00067 inches.
- the coupled transmission lines are of the form described in the Wheeler reference and are calculated using the equations on page 179 of his reference. Transmission lines 2A, 2B, 6A, and 6B transition from approximately 50 ohms in microstrip to approximately 50 ohms balanced line, and are approximately a quarter wavelength long at 8.2 GHz .
- the width and length of transmission lines 4A, 4B, 5A, and 5B are approximately 0.044 inches and approximately 0.250 inches respectively.
- the impedance of transmission lines 4A, 4B, 5A, and 5B is typically 25 ohms to 50 ohms, preferably 35 ohms.
- Transmission line 1 is approximately 0.003 inches wide by approximately 0.117 inches long.
- Data filter 7 is composed of a transmission line that is approximately 0.003 inches wide by approximately 0.250 inches long, and a transmission line that is approximately 0.1 inches by approximately 0.2 inches.
- Ring of four Schottky diodes 10 may be soldered in place as shown in Figs. 2A and 2C.
- Transmission line 6A may be connected to transmission line 4B, and transmission line 6B may be connected to transmission line 5B by the bending and soldering in place as shown in Figs. 2B and 2C.
- the assembly may be housed in a hermetic package (approximately 0.800 inches by 0.590 inches by 0.190 inches) and filled with syntactic foam.
- the typical electrical performance characteristics of the described circuit in the forward transmission direction (input signal is applied at RF IN and output signal is at RF 0 u ⁇ ) as measured in an experimental run is as follows: insertion loss less than 3.0 dB, amplitude balance less than 0.2 dB, phase balance less than 1.0 degree, return loss greater than 25 dB.
- biphase modulators are bi-directional and may be used to modulate a microwave signal applied at the output of the modulator.
- the typical electrical performance characteristics of the described circuit in the reverse transmission direction (input signal is applied at RFQ UT an ⁇ output signal is at RF IN ) as measured in an experimental run is as follows: insertion loss less than 3.0 dB, amplitude balance less than 0.2 dB, phase balance less than 1.0 degree, return loss greater than 20 dB .
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplitude Modulation (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002297759A CA2297759A1 (en) | 1997-07-29 | 1998-07-28 | Biphase modulator with balun design |
EP98938061A EP1000491A4 (en) | 1997-07-29 | 1998-07-28 | Biphase modulator with balun design |
JP2000505722A JP2001512929A (en) | 1997-07-29 | 1998-07-28 | Two-phase modulator with balun design |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5415297P | 1997-07-29 | 1997-07-29 | |
US09/014,539 US5867072A (en) | 1997-07-29 | 1998-01-28 | Biphase modulator with balun design |
US09/014,539 | 1998-01-28 | ||
US60/054,152 | 1998-01-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO1999007122A1 true WO1999007122A1 (en) | 1999-02-11 |
WO1999007122A9 WO1999007122A9 (en) | 1999-04-29 |
WO1999007122A8 WO1999007122A8 (en) | 1999-07-01 |
Family
ID=26686213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/015617 WO1999007122A1 (en) | 1997-07-29 | 1998-07-28 | Biphase modulator with balun design |
Country Status (5)
Country | Link |
---|---|
US (1) | US5867072A (en) |
EP (1) | EP1000491A4 (en) |
JP (1) | JP2001512929A (en) |
CA (1) | CA2297759A1 (en) |
WO (1) | WO1999007122A1 (en) |
Families Citing this family (16)
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---|---|---|---|---|
US8068832B2 (en) * | 2001-11-19 | 2011-11-29 | Nokia Corporation | Multicast session handover |
US6957055B2 (en) * | 2002-02-20 | 2005-10-18 | Doron Gamliel | Double balanced FET mixer with high IP3 and IF response down to DC levels |
US6982609B1 (en) * | 2002-05-15 | 2006-01-03 | Zeevo | System method and apparatus for a three-line balun with power amplifier bias |
US7283793B1 (en) | 2002-05-15 | 2007-10-16 | Broadcom Corporation | Package filter and combiner network |
WO2005057787A1 (en) * | 2003-11-14 | 2005-06-23 | Time Domain Corporation | A bi-phase modulator for ultra wideband signals |
CN100563115C (en) * | 2004-06-08 | 2009-11-25 | 华为技术有限公司 | Transfer impedance distribution cable |
US8264283B1 (en) | 2007-03-29 | 2012-09-11 | Scientific Components Corporation | Single side band mixer |
US8344818B1 (en) | 2007-06-15 | 2013-01-01 | Scientific Components Corporation | Single side band (SSB) mixer |
US9888568B2 (en) | 2012-02-08 | 2018-02-06 | Crane Electronics, Inc. | Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module |
US9230726B1 (en) | 2015-02-20 | 2016-01-05 | Crane Electronics, Inc. | Transformer-based power converters with 3D printed microchannel heat sink |
US10911016B2 (en) | 2019-01-08 | 2021-02-02 | Analog Devices, Inc. | Wideband balun |
US11101227B2 (en) | 2019-07-17 | 2021-08-24 | Analog Devices International Unlimited Company | Coupled line structures for wideband applications |
US10938542B1 (en) | 2019-09-25 | 2021-03-02 | Apple Inc. | Electrical balanced duplexer-based duplexer |
CN113872902B (en) * | 2020-06-30 | 2023-04-07 | 华为技术有限公司 | Signal modulation circuit, method and related product |
CN115336100B (en) * | 2020-09-25 | 2024-04-16 | 京东方科技集团股份有限公司 | Balun component, microwave radio frequency device and antenna |
CN216390912U (en) * | 2021-11-24 | 2022-04-26 | 深圳飞骧科技股份有限公司 | High-frequency broadband balun matching converter and radio frequency device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4430758A (en) * | 1982-06-03 | 1984-02-07 | Scientific Component Corporation | Suspended-substrate co-planar stripline mixer |
US5081432A (en) * | 1989-12-15 | 1992-01-14 | U.S. Philips Corp. | Variable bi-phase modulator circuits and variable resistors for microwave signals |
US5428840A (en) * | 1993-12-10 | 1995-06-27 | Itt Corporation | Monolithic double balanced microstrip mixer with flat conversion loss |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629729A (en) * | 1970-06-24 | 1971-12-21 | Motorola Inc | High-frequency doubly balanced wide waveband ring-connected diode modulator |
DE2819838C3 (en) * | 1978-05-05 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | Broadband ring modulator for very short electromagnetic waves |
DE4203206A1 (en) * | 1992-02-05 | 1993-08-12 | Deutsche Aerospace | Mixer for input and LO signals - filters at least part of mixer prods. by matching to transformer electric line lengths |
-
1998
- 1998-01-28 US US09/014,539 patent/US5867072A/en not_active Expired - Fee Related
- 1998-07-28 EP EP98938061A patent/EP1000491A4/en not_active Withdrawn
- 1998-07-28 JP JP2000505722A patent/JP2001512929A/en active Pending
- 1998-07-28 WO PCT/US1998/015617 patent/WO1999007122A1/en not_active Application Discontinuation
- 1998-07-28 CA CA002297759A patent/CA2297759A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4430758A (en) * | 1982-06-03 | 1984-02-07 | Scientific Component Corporation | Suspended-substrate co-planar stripline mixer |
US5081432A (en) * | 1989-12-15 | 1992-01-14 | U.S. Philips Corp. | Variable bi-phase modulator circuits and variable resistors for microwave signals |
US5428840A (en) * | 1993-12-10 | 1995-06-27 | Itt Corporation | Monolithic double balanced microstrip mixer with flat conversion loss |
Non-Patent Citations (1)
Title |
---|
See also references of EP1000491A4 * |
Also Published As
Publication number | Publication date |
---|---|
CA2297759A1 (en) | 1999-02-11 |
WO1999007122A8 (en) | 1999-07-01 |
EP1000491A1 (en) | 2000-05-17 |
WO1999007122A9 (en) | 1999-04-29 |
JP2001512929A (en) | 2001-08-28 |
EP1000491A4 (en) | 2001-09-05 |
US5867072A (en) | 1999-02-02 |
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