WO1998049711A1 - Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees - Google Patents
Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees Download PDFInfo
- Publication number
- WO1998049711A1 WO1998049711A1 PCT/FR1998/000831 FR9800831W WO9849711A1 WO 1998049711 A1 WO1998049711 A1 WO 1998049711A1 FR 9800831 W FR9800831 W FR 9800831W WO 9849711 A1 WO9849711 A1 WO 9849711A1
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- WO
- WIPO (PCT)
- Prior art keywords
- microdevice
- microbeams
- charged particles
- plates
- filtering
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 22
- 238000001914 filtration Methods 0.000 title claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000005405 multipole Effects 0.000 claims description 3
- 238000005339 levitation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 9
- 238000004377 microelectronic Methods 0.000 description 7
- 238000004949 mass spectrometry Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
- H01J49/4205—Device types
- H01J49/421—Mass filters, i.e. deviating unwanted ions without trapping
- H01J49/4215—Quadrupole mass filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/0013—Miniaturised spectrometers, e.g. having smaller than usual scale, integrated conventional components
- H01J49/0018—Microminiaturised spectrometers, e.g. chip-integrated devices, Micro-Electro-Mechanical Systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
Definitions
- the invention relates to the field of electrode architectures for generating a multipolar field, or for filtering or deflecting or focusing charged particles. More particularly, the invention relates to microdevices integrating sets of microelectrodes, also with the aim of generating a multipolar field in particular for filtering or deflecting or focusing charged particles.
- the invention finds an application in particular in the field of mass spectrometry: in fact, the sets of electrodes according to the invention can be used in mass spectrometers. The invention therefore also relates to the field of mass spectrometry.
- Mass spectrometry is a widely used analytical technique in laboratories and industry. Thanks to it, the nature of the constituents of a gas can be determined with a sensitivity better than the ppm. To do this, the gas to be analyzed must be under low pressure, generally less than 10 ⁇ 4 mbar. This is a limitation for many applications where the pressure is higher
- a mass spectrometer has three distinct parts, as illustrated in Figure 1: an ionization chamber 2, a separator 4 (filter) and an ion detector 6. Many separators are of the quadrupole type .
- the theory of unipolar, quadrupolar mass spectrometers, etc. is for example described in the work "Engineering Techniques", volume P3, P 2615, p. 1-39.
- the mass filter 4 is the place where, by the play of electromagnetic forces, the ions of different masses are separated.
- a quadrupole (dedicated term meaning "mass analyzer equipped with a quadrupole type filter")
- a high frequency electric field is generated between 4 parallel bars 8, 10, 12, 14 such as those represented in FIG. 1. It is assumed that the ions move in the mean direction OZ parallel to the bars.
- a quadrupole electric field is such that its amplitude is a linear function of the coordinates.
- the electric potential is therefore a quadratic form of the coordinates. It can be written in the form
- V ( ⁇ / r 2 ) x (x 2 -y 2 )
- r is the distance between the axis OZ and the bars (we also call r the throat radius of the quadrupole) and ⁇ a constant value of the potential.
- the potential V also comprises a time-dependent component (term in cos ⁇ t) which is used to oscillate the charged particles.
- the equipotential lines which correspond at a given moment to this distribution of potentials (as a function of the potentials applied to the bars) are hyperbolas in the XOY plane. In the ideal case, the straight sections of the bars have this same form of hyperbola.
- a quadrupole system with bars 16, 18, 20, 22 of hyperbolic section is illustrated in FIG. 2 and is for example described in US-5,373,157.
- the bars In the majority of cases, and in order to use only machining that is easy to carry out, the bars have straight circular sections osculating with hyperbolas at their apex; such cross sections 26, 28, 30, 32 are also represented in FIG. 2. A degradation of the resolution results from the passage from the hyperbola to the circle.
- WO-96/31901 describes a miniaturized quadrupole mass spectrometer. This device uses cylindrical beams made from metallized optical fibers. In such a device, the insulators located between the cylindrical bars can lead to load effects detrimental to the operation of the device.
- US Patent 5,401,962 describes a miniature quadrupole. The miniaturization, or the reduction in size, comes, in this document, from the assembly in parallel of a plurality of quadrupoles. This device lacks resolution. Furthermore, its production, even if it uses cylindrical electrodes, is fairly tedious.
- Control plate for a lithography device.
- This control plate essentially comprises a semiconductor substrate in which is made a window, or opening, to allow the passage of beams of particles.
- Deflection elements make it possible to deflect the beams.
- This document also describes methods for producing such a plate. In these methods, the deflection elements are obtained by etching a layer to produce depressions therein having the shape of the deflection elements, then voltaic filling of the depression zones. The deflection elements are therefore produced in a direction perpendicular to the plane of these layers.
- the field generated is a uniform field in all directions and throughout the space between the planar electrodes. This field is not multipolar.
- the invention relates to a microdevice for generating a transverse multipolar field, comprising n conductive microbeams, longitudinal, with polygonal cross section, arranged around a longitudinal axis.
- the field is constant along the longitudinal axis.
- multipolar field any electric field, even monopolar. Such a field is not uniform since it is multipolar or monopolar. Consequently, according to the invention, the production of electric fields on submillimetric scales, and deriving from potentials of the quadrupolar, hexapolar or octopolar type or, more generally, N-polar (N> 1), can be carried out with electrode structures (also called lenses) in which the electrodes have a cross section of polygonal shape. Such electrodes are compatible with an embodiment implementing the techniques of microelectronics or microtechnology, and therefore allow the manufacture of miniaturized mass spectrometers.
- the invention also relates to a microdevice for filtering or deflecting or focusing charged particles, comprising n conductive microbeams, longitudinal, of polygonal cross section, and arranged around a longitudinal axis of propagation of charged particles.
- the invention also relates to a microdevice for filtering or deflecting or focusing charged particles comprising a microdevice for generating a transverse multipolar field as already described above.
- the invention defines an electrode structure for a filtering or deflection or focusing microdevice, which is compatible with an embodiment by the techniques of microelectronics or microtechnology. It is thus possible to generate electric fields, for a microdevice of filtering or deflection or focusing, on submillimetric scales.
- the electrodes used in the device of quadrupole type, or more generally N-polar have sizes that cannot fall below certain dimensions, which limits the smaller size of the device.
- document US Pat. No. 5,401,962 mentions cylindrical electrodes with a diameter between 0.5 mm and 1 mm, and with a length between about 1 cm and 2 cm.
- the electrode structure according to the invention makes it possible to produce submillimetric devices (for example with bars the thickness of which is around a few hundred ⁇ m) and which can work at higher pressure (for example around 10 "2 mbar ).
- Multipolar structures according to the invention can be associated with means for polarizing the conductive microbeams. Likewise, they can be associated with means for introducing ions or charged particles in a direction defined by the axis, or the axes, longitudinal / longitudinal. A multipolar field is associated with each longitudinal axis, all the longitudinal axes being parallel. According to a particular embodiment, each microbeam can be produced in a planar substrate and maintained in the plane of the substrate by lifting bars.
- the microdevice may include: - at least first and second plates of insulating or semiconductor material,
- the microdevice includes for example:
- the means for holding the plates parallel to each other may also allow a alignment of said plates so as to obtain the desired multipolar field.
- these means are spacers arranged in notches made in the plates to ensure this alignment.
- These structures are entirely compatible with a collective and extremely precise production (at approximately + 1 ⁇ m), which can be implemented with techniques of etching and working of substrates known in microelectronics.
- the invention also relates to a mass spectrometer comprising a microdevice according to the invention, as set out above, means for introducing ions therein and detection means.
- the subject of the invention is a method of producing a microdevice for generating a transverse multipolar field and in particular a microdevice for filtering or deflecting or focusing charged particles, comprising the following steps: - etching of P substrates in insulating or semiconductor material so as to define, in each substrate, one or more microbeams,
- FIG. 1 schematically represents a mass analyzer of the quadrupole type
- FIG. 2 illustrates the production of quadrupoles using hyperbolic or cylindrical electrodes
- FIG. 3 represents the production of a quadrupole according to the invention
- FIGS. 4A and 4B represent, in section and in top view, a detailed embodiment of a quadrupole system according to the invention
- FIG. 5 schematically represents a scale of microbeams
- FIG. 6 is a plan view of a set of quadrupoles operating in parallel
- FIGS. 7A and 7B represent, in section and in top view, a multiple quadrupole according to the invention, machined by microtechnology
- a structure for producing a quadrupole according to the invention is illustrated on the Figure 3.
- electrodes 32, 34, 36, 38, of polygonal cross section are arranged parallel to each other, and symmetrically with respect to an axis AA '.
- the polygonal section shown in FIG. 3 is a square section, but other polygonal sections (pentagon, hexagon, etc.) can be produced within the framework of the invention.
- This electrode assembly constitutes a quadrupole structure which can be implemented, for example in the context of a mass spectrometer. Such a quadrupole structure is then coupled on the one hand to an ion source (located at one end of the quadrupole structure) and on the other hand to an ion detection system (located at the other end of the structure quadrupole). Examples of such ion sources and such detection systems are described in the work "Engineering Engineering", volume P3, P2615, pages 1-39.
- Each of the electrodes is connected to means for applying a certain potential to it. This results in an electric field in the space between the four electrodes, and around the axis AA '. If the electric field generated is a quadrupole electric field, its amplitude will be a linear function of the coordinates X, Y, Z. When the quadrupole serves as a filter or as a means of deflecting or focusing the beam of particles 40, the potential V also comprises a time-dependent component (term in cos ⁇ t) which makes it possible to oscillate the charged particles.
- FIG. 4A An embodiment of a quadrupole system according to the invention is illustrated more precisely in FIG. 4A.
- references identical to those of FIG. 3 designate the microbeams, of polygonal section (here: square), of the quadrupole device.
- the device also comprises spacers 40, 42, making it possible to separate the upper plane 44, in which the upper microbeam 32 is made from the intermediate plane 46, in which the two microbeams 34, 38 are made and, on the other hand, the plane intermediate 46 of the lower plane 48 in which the microbeam 36 is produced.
- FIG. 4B represents a top view of this device: the upper microbeam 32 is obtained for example by etching and partial or total metallization of a wafer of insulating material or semiconductor defining the plane 44.
- the length 1 of the windows released by etching in the plane 44 is approximately 20 (where e is the thickness of a microbeam).
- the microbeams 34, 38 are obtained by etching and partial or total metallization of a wafer of insulating or semiconductor material defining the plane 46 and the lower microbeam 36 is obtained by etching and partial or total metallization of a wafer of an insulating or semiconductor material defining the lower plane 48.
- the references 50, 52, 54, 56 designate lift bars which connect the microbeam 32 to the rest of the plane 44.
- such lift bars support the microbeams and connect those between them or with the engraved substrate.
- Notches 60, 62, 64 are also made in the various material plates in order to be able to position the spacers 40, 42.
- these notches are produced by etching the material plates, they will have a thickness equal to the distance separating two parallel planes increased by the etching depth in each of the material plates.
- the spacers can be made, depending on the length of the device, in a single block or in several blocks.
- the references 40-1, 40-2, 40-3 and 42-1, 42-2, 42-3 designate the traces of six spacers (three spacers aligned on each side) which separate the upper 44 and intermediate 46 planes.
- each spacer has small dimensions Ci, c 2 , for example each equal to 1 mm or each less than 1 mm.
- plates are selected in which the upper 44, intermediate 46 and lower 48 planes of the structure will be produced.
- Such wafers can be silicon wafers, of thickness e being for example 0.5 mm.
- steps 1 to 4 1) -
- the upper 44 and lower 48 plates are engraved (deep engraving) to reveal, on the one hand the central bars 32, 36 and on the other hand the notches 60, 62 which will be used for positioning and fixing the assembly.
- Known techniques using masks and lithography are used before etching.
- the deep engraving operation is done in two stages in order to be able to keep four lifting bars 50, 52, 54, 56, preferably as thin and small as possible, whose role is to support the central bar 32, 36.
- We engraving each plate first on one side, until the thickness of the bar is preserved, then on the other side to open, while preserving the bar (thanks to a second lithography step).
- the intermediate plate (possibly in two pieces), of the same thickness as the previous ones, is etched to define the right bars 34 and left 38 and the notches 64 for the spacers.
- electrodes serving as electrostatic shielding or focusing lens for bringing the ion beam to the inlet of the filter are added to the system.
- ionization this is done by known methods (ionization by electron beams coming from a filament or a cathode with microtips or micro-knives, or coming from a discharge). Detection is done using conventional devices.
- the method described above uses techniques from microtechnologies or microelectronics, and allows bars with square or polygonal cross-section to be produced with great precision. Such techniques are compatible with a collective manufacturing, making it possible to define precise dimensions for the entire architecture (a precision of the order of a micrometer is reached), all the more so since part of the assembly can be carried out at the time of manufacturing bars.
- the deep etching techniques of silicon wafers known in the field of microtechnology or microelectronics, make it possible, from wafers with parallel faces, to obtain rectangular sections.
- the anisotropy of engravings depending on the crystal faces makes it possible to obtain polygonal profiles.
- the electrodes can be mounted, at their ends, on two holding plates, mutually parallel, each plate having the slots or inputs or outputs necessary for the path of the ions.
- This device can be produced, in microtechnology, by a process known under the name of "LIGA".
- the structure described above is a quadrupole structure, for example for obtaining a quadrupole electric field.
- This structure can be generalized to the production of a set of n conductive microbeams, with a polygonal cross section, making it possible to obtain a transverse multipolar (and, advantageously, longitudinally uniform) field.
- the invention also relates to the production of a multiple structure, for example of a set of quadrupoles operating in parallel.
- the reduction, by a factor k, of the dimensions of a quadrupole leads to the reduction, by a factor k 2 , of the entry slit.
- this attenuation is compensated for by placing k 2 quadrupole in parallel.
- the gain in volume is therefore a factor k, and the sensitivity remains the same.
- 4x (1/8) 0.5 times the volume of the original quadrupole, before reduction .
- FIG. 6 is a view, from the side of the ion entry face, of a set of quadrupoles operating in parallel. Each of the scales corresponds to a line of black or white squares. Each individual quadrupole (for example the one defined in FIG. 6 by the bars 82, 84, 86, 88) has a microbeam in common with the immediately neighboring quadrupole on the same line (in FIG. 6, it is the defined quadrupole by microbeams 90, 92, 94, 84).
- FIG. 7A illustrates the production of two quadrupoles arranged side by side, the microbeams being designated by the references 82-94.
- microbeams are produced in planar substrates 96, 98, 100 etched, and the assembly of which is carried out using separation spacers 102, 104.
- Figure 7B shows a top view of the structure of Figure 7A.
- Each microbeam 82, 90 is supported by lifting bars 106,
- the microbeam 84 is supported by similar bars.
- these strips are made as thin and small as possible, so that they are not an obstacle to incident or emerging ions from quadrupoles, or multipoles.
- the bars have, for example, lengths of 1240 ⁇ m (0.74e + e + 0.74e) for a section of 10 ⁇ x10 ⁇ m (the dimensions are given to ⁇ 1 ⁇ m).
- the inlet and outlet ports of the ions are aligned on the axis of each quadrupole: the points A and B in FIG. 7A are the traces of these axes in this figure.
- the length of the bars is of the order of 10 mm; such a quantity can be considered as large compared to the transverse dimensions, and allows a certain number of oscillations of the ion on its trajectory.
- the polarization of the electrodes as a function of time is simulated using an electronic optics program ("SIMION" program, version 4.0, DA Dahl and JE Delmore, Idaho National Engineering Laboratory, 1988).
- SIMION electronic optics program
- the microbeam structure according to the invention therefore makes it possible to produce electrodes with controlled geometry.
- This geometry makes it possible to provide results, as regards the electric field as the filtering capacities, as good as those of the cylindrical electrodes.
- the proposed geometry is compatible with production by techniques derived from microelectronics, allowing collective manufacturing: the techniques for etching substrates or semiconductor wafers are indeed well mastered. Consequently, the electrode structure according to the invention makes it possible to produce a device having good resolution, as well as good reproducibility of its performance, and the cost of which is lowered, compared with currently known devices.
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Tubes For Measurement (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98922869A EP0978139A1 (fr) | 1997-04-25 | 1998-04-24 | Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees |
JP54666198A JP2001522514A (ja) | 1997-04-25 | 1998-04-24 | 多極子場を発生するマイクロ装置であって、特に荷電粒子の分離あるいは偏向あるいは集束用のマイクロ装置 |
US09/381,917 US6465792B1 (en) | 1997-04-25 | 1998-04-27 | Miniature device for generating a multi-polar field, in particular for filtering or deviating or focusing charged particles |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9705153A FR2762713A1 (fr) | 1997-04-25 | 1997-04-25 | Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees |
FR97/05153 | 1997-04-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998049711A1 true WO1998049711A1 (fr) | 1998-11-05 |
Family
ID=9506324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR1998/000831 WO1998049711A1 (fr) | 1997-04-25 | 1998-04-24 | Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees |
Country Status (5)
Country | Link |
---|---|
US (1) | US6465792B1 (fr) |
EP (1) | EP0978139A1 (fr) |
JP (1) | JP2001522514A (fr) |
FR (1) | FR2762713A1 (fr) |
WO (1) | WO1998049711A1 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004534360A (ja) * | 2001-06-15 | 2004-11-11 | 株式会社荏原製作所 | 電子線装置及びその電子線装置を用いたデバイスの製造方法 |
GB2391694B (en) * | 2002-08-01 | 2006-03-01 | Microsaic Systems Ltd | Monolithic micro-engineered mass spectrometer |
US6936815B2 (en) * | 2003-06-05 | 2005-08-30 | Thermo Finnigan Llc | Integrated shield in multipole rod assemblies for mass spectrometers |
US7227138B2 (en) * | 2003-06-27 | 2007-06-05 | Brigham Young University | Virtual ion trap |
US7081623B2 (en) * | 2003-09-05 | 2006-07-25 | Lucent Technologies Inc. | Wafer-based ion traps |
GB2446184B (en) * | 2007-01-31 | 2011-07-27 | Microsaic Systems Ltd | High performance micro-fabricated quadrupole lens |
US8389950B2 (en) * | 2007-01-31 | 2013-03-05 | Microsaic Systems Plc | High performance micro-fabricated quadrupole lens |
WO2009009471A2 (fr) * | 2007-07-06 | 2009-01-15 | Massachusetts Institute Of Technology | Amélioration de performance via l'utilisation de zones de stabilité supérieure et traitement de signal dans des filtres de masse quadrupolaires optimaux |
WO2009009475A2 (fr) * | 2007-07-06 | 2009-01-15 | Massachusetts Institute Of Technology | Barreaux rectangulaires fabriqués par lots, et quadripôle mems du type planar à optique ionique |
GB2451239B (en) * | 2007-07-23 | 2009-07-08 | Microsaic Systems Ltd | Microengineered electrode assembly |
GB2454241B (en) * | 2007-11-02 | 2009-12-23 | Microsaic Systems Ltd | A mounting arrangement |
JP2009152088A (ja) * | 2007-12-21 | 2009-07-09 | Jeol Ltd | 荷電粒子の輸送・貯蔵機構 |
GB0819028D0 (en) * | 2008-09-05 | 2008-11-26 | Ulive Entpr Ltd | Process |
US8927940B2 (en) * | 2011-06-03 | 2015-01-06 | Bruker Daltonics, Inc. | Abridged multipole structure for the transport, selection and trapping of ions in a vacuum system |
US9184040B2 (en) * | 2011-06-03 | 2015-11-10 | Bruker Daltonics, Inc. | Abridged multipole structure for the transport and selection of ions in a vacuum system |
US8969798B2 (en) * | 2011-07-07 | 2015-03-03 | Bruker Daltonics, Inc. | Abridged ion trap-time of flight mass spectrometer |
US9425033B2 (en) | 2014-06-19 | 2016-08-23 | Bruker Daltonics, Inc. | Ion injection device for a time-of-flight mass spectrometer |
US10141177B2 (en) | 2017-02-16 | 2018-11-27 | Bruker Daltonics, Inc. | Mass spectrometer using gastight radio frequency ion guide |
WO2024025661A1 (fr) * | 2022-07-29 | 2024-02-01 | Agilent Technologies, Inc. | Entonnoir ionique à base de sections multipolaires |
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CN85102774B (zh) * | 1985-04-01 | 1987-11-04 | 复旦大学 | 利用封闭边界产生静电四极场的结构 |
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US5596193A (en) * | 1995-10-11 | 1997-01-21 | California Institute Of Technology | Miniature quadrupole mass spectrometer array |
-
1997
- 1997-04-25 FR FR9705153A patent/FR2762713A1/fr not_active Withdrawn
-
1998
- 1998-04-24 JP JP54666198A patent/JP2001522514A/ja active Pending
- 1998-04-24 EP EP98922869A patent/EP0978139A1/fr not_active Withdrawn
- 1998-04-24 WO PCT/FR1998/000831 patent/WO1998049711A1/fr not_active Application Discontinuation
- 1998-04-27 US US09/381,917 patent/US6465792B1/en not_active Expired - Fee Related
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US3819941A (en) * | 1973-10-15 | 1974-06-25 | Bendix Corp | Mass dependent ion microscope having an array of small mass filters |
US4994336A (en) * | 1988-05-31 | 1991-02-19 | Siemens Aktiengesellschaft | Method for manufacturing a control plate for a lithographic device |
EP0488707A2 (fr) * | 1990-11-28 | 1992-06-03 | Fujitsu Limited | Déflecteur de faisceau de particules chargées |
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Also Published As
Publication number | Publication date |
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US6465792B1 (en) | 2002-10-15 |
FR2762713A1 (fr) | 1998-10-30 |
EP0978139A1 (fr) | 2000-02-09 |
JP2001522514A (ja) | 2001-11-13 |
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