WO1998037575A1 - Surface treatment method and apparatus therefor - Google Patents

Surface treatment method and apparatus therefor

Info

Publication number
WO1998037575A1
WO1998037575A1 PCT/JP1998/000629 JP9800629W WO9837575A1 WO 1998037575 A1 WO1998037575 A1 WO 1998037575A1 JP 9800629 W JP9800629 W JP 9800629W WO 9837575 A1 WO9837575 A1 WO 9837575A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
surface
treatment
object
treated
surface treatment
Prior art date
Application number
PCT/JP1998/000629
Other languages
French (fr)
Japanese (ja)
Inventor
Shoichi Terada
Yoshiaki Mori
Takuya Miyakawa
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C11D11/0005Special cleaning and washing methods
    • C11D11/0011Special cleaning and washing methods characterised by the objects to be cleaned
    • C11D11/0023"Hard" surfaces
    • C11D11/0047Electronic devices, e.g. PCBs, semiconductors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Abstract

A processing liquid (6) in a vessel (7) is heated by a heater (8) to evaporate, and the resulting vapor is controlled by a valve (9) and introduced into a treatment chamber (1) through a pipeline (10). In the treatment chamber (1), articles (5) being treated are placed on a heating plate (4) set on a conveying table (3). The articles being treated are heated by the heating plate so that a surface temperature of the articles being treated rises above, for example, a boiling point of the processing liquid. Surfaces of the articles being treated are exposed to vapor of the processing liquid introduced into the treatment chamber, so that surface refining such as improving of wettability and surface treatments such as ashing, etching and dry cleaning are performed depending upon a kind of the processing liquid used. Effects of the surface treatment can be enhanced by mixing an auxiliary gas into the vapor of the processing liquid and exposing the surfaces of the articles being treated to the mixed gas. The articles being treated, having been subjected to treatment are removed from the treatment chamber by driving the conveying table (3), subsequently introducing new articles being treated and repeating the surface treatment procedure.

Description

Itoda β surface treatment method and apparatus TECHNICAL FIELD

The present invention is, or divided inorganic or organic substances with Etchingu Ya Asshingu the surface of the material to be treated, to a surface treatment technique for improving the wettability by reforming. BACKGROUND

Conventionally, with the development of semiconductor technology, various technologies that have been developed are known for the surface treatment of this kind. For example, as a method for removing organic substances from the surface of the object to be treated such as substrate, and Uetsu Bok washed with an organic solvent, ozone, Dorai cleaning method of removing by causing a chemical reaction such as an organic substance was irradiated with ultraviolet rays is there. And power, and, in the above Uetsu DOO cleaning method, in addition to the step of performing a process of interest, rinsing step of removing the processing solvent, and not only requires a step of drying the substrate, of these additional steps requires fixed equipment to run, there is a problem in that manufacturing cost I higher due.

In the conventional dry cleaning process, due to the low capability of removing large organic molecular weight, sufficient cleaning effect can not be expected. To solve this problem, by using a plasma which caused in vacuo, or by removing the organic or inorganic, a method of etching and the thickness sequencing it has been developed. And power, and, requires special equipment such as a vacuum chamber and a vacuum pump, the equipment whole becomes complicated, the cost is high because expensive. Also, since it takes decompression time for a discharge, a low processing capacity. For this reason, Maihasho management is difficult, there is a problem, such as an inability to Inrain of.

In contrast, for example, JP-A-2 2 8 1 7 3 4, JP-A No. 3 2 3 6 4 7 5 JP, Hei 5 2 3 5 7 9 JP, Hei 5 2 7 5 as shown open in such 1 9 0 JP, by generating plasma by glow one discharge under a pressure close to the atmospheric pressure, uniformly or locally a surface processing a large area of ​​the material to be treated, etching and Atsushingu, thin film formation, a method of modifying the surface of such hydrophilic are known. For this, although not to require a vacuum apparatus, there is a problem that stable control and electrode device of discharge electricity for originating ^ the plasma becomes complicated.

Accordingly, the present invention is state, and are made in order to solve the conventional problems described above, it is an object not require an additional step for re Nsu and drying Yuck method, a Further without requiring a large capital expensive for vacuum or reduced pressure, easily configure the device and can be downsized, surface modification Ya Atsushingu such wettability improving, the surface treatment such as etching, relatively easily and to provide a novel surface treatment method can be performed at low cost Bok.

Another object of the present invention is to provide Hisage a novel apparatus for realizing such a surface treatment method. Disclosure of the Invention

According to an aspect of the present invention, the processing solution to generate heat to steam the surface treatment method in which the surface of the treatment product is heated, characterized in that exposure to the steam is provided. Surface of the object to be treated, because it is treated by dry by steam treatment liquid, without being limited to the shape and material of the workpiece, by appropriately selecting the liquid to be used, such as improved wettability possible surface modification, etching, Atsushingu, be effectively carried out in the field of wide range of various tables Liil 'process Dorai cleaning. Further, without the need for any additional step after processing, such as required rinsing and drying in conventional Uetsu Bok process also does not require a large vacuum equipment in the conventional dry treatment, the treatment liquid and the material to be treated handling 及 beauty treatment operations are relatively simple, the device and equipment therefor easily configured, can be miniaturized, it is possible to significantly reduce the processing cost. Further, it is possible to easily even processing in inlined Ya situ processing operations.

Object to be treated, is heated so that the temperature of the surface is above the boiling point of the treatment liquid, since the treatment liquid is likely no be liquefied is cooled in the object surface to be treated, effectively can the surface treatment child , it is convenient.

Object to be processed surface, by heating this entirely, it is possible to process the entire surface, or by only heating the part be selectively surface treatment only a desired portion . Further, the object to be treated is that by placing in an atmosphere containing the vapor of the treating solution, the surface is easily exposed to the steam, it is possible to perform the desired surface treatment.

According to one embodiment, pure water into the processing solution, using an acidic water or alkaline water, by exposure to the vapor of its, to improve its wettability by reforming an object to be processed surface, or it can be Asshingu the surface.

According to another embodiment, using an acid in the treatment solution, Ri by the exposure to the vapor, it is possible to etch the object surface to be treated. Further, in another embodiment, the use of organic solvents in the processing solution, it is the this to improve the wettability of the workpiece surface. In yet another embodiment, using an oxidizing liquid to the treatment liquid, it is possible to Atsushingu an object to be processed table surface.

Further, according to the present invention, a mixture of steam to auxiliary gas of the treatment liquid, it is possible to expose the surface of the workpiece a heated pressurized to the mixed gas is carried out whereby the desired surface treatment effectively be able to.

According to one embodiment, pure water in the treatment liquid, acidic water or using alkaline water, and exposing the oxidizing gas to a mixed gas of steam and oxidizing gas for use ,, the process solution to the auxiliary gas by, it is possible to improve the wettability of the workpiece surface.

According to another embodiment, using an oxidizing solution to the processing solution, and by using an oxidizing gas into the auxiliary gas, by oxidizing an object to be processed surface, or improve the wettability of 該被 treated surface it can be.

In yet another embodiment, an organic solvent in the treatment liquid, and by using a non-oxidizing gas into the auxiliary gas, it is possible to improve the wettability of the workpiece surface. Further, according to the present invention, in order to Atsushingu the surface of the object to be treated, made from two or more Atsushingu step, at least the last Asshingu process, the treatment liquid by heating pressurization to generate steam, and heated above surface treatment method characterized by comprising the step of exposing the surface of the object to the vapor is provided. Thus, previously treated with non-treated surface with a Atsushi Ngure Bok high way, by dry treatment using steam later appropriately selected processing solution, the ratio of the organic residues remaining on the surface comparatively easily and efficiently can be completely Atsushingu as a result, it is possible to improve the processing efficiency of Atsushingu as a whole. According to another aspect of the present invention, a steam generator for generating steam by heating the treatment liquid consists of a heating device for heating an object, the heated surface of the object to be treated prior Symbol steam surface treatment apparatus is characterized in that so as to be exposed is provided. This ensures that it is possible to easily realize a surface treatment method of the present invention.

The surface treatment apparatus further comprises a housing defining an atmosphere containing the vapor of the treating solution, when an object is placed in the housing, easily since the object surface to be treated can be exposed to the steam, it is good if .

As a heating apparatus, using a heating play Bok for placing an object to be processed, it is possible to heat the object to be processed directly. In another embodiment, it is possible to use a hot air blower for sending the hot air to the object surface to be treated as a heating device, whereby a number of substantially uniformly heating the entire article to be treated, a surface treatment at the same time be able to.

In another embodiment, the instrumentation K for irradiating infrared or ultraviolet to the heating device can be Shikawa, by further comprising a mask for partially irradiating infrared rays or ultraviolet rays on the object surface to be treated, a desired portion can be selectively and treating locally the surface.

Further, according to the present invention, it is convenient to perform the desired surface treatment more effectively, further comprising a gas supply device for supplying an auxiliary gas to be mixed into the vapor of the treating solution. BRIEF DESCRIPTION OF THE DRAWINGS

Figure 1 is a schematic sectional view showing a configuration of a first embodiment of the applied surface treatment apparatus of the present invention.

Figure 2 is a sectional view showing a modification of the first embodiment.

Figure 3 is a cross-sectional view showing another modification of the first embodiment.

Figure 4 is a schematic sectional view showing a configuration of a second embodiment of the applied surface treatment apparatus of the present invention.

Figure 5 is a schematic sectional view showing a configuration of a third embodiment of the applied surface treatment apparatus of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

The first diagram, the structure of the first actual 施例 suitable apparatus for carrying out the surface treatment method according to the invention is schematically illustrated. The surface treatment apparatus comprises a housing 2 defining a treatment chamber 1 therein, in the processing chamber heating plate 4, which is set is arranged on the transport table 3, mounting the object to be treated 5 thereon and summer to location. The housing 2 is connected to the steam generator Do that from a heater 8 for heating the container 7 and the container containing the treatment liquid 6. Top of the vessel 7 communicates with the process chamber 1 via a line 1 0 provided with inlet valve 9. Also, the housing communicates with the outside via the exhaust valve 1 1.

The treatment liquid 6, according to the surface treatment for the purpose of water (pure water, tap water ^ No), acidic water, alkaline water, oxidizing solution, an organic solvent, the use of various liquid species such as acids it can. Specifically, considering the influence of the ease of handling and the environment, but as the treatment 现液 most preferably water, hydrogen peroxide water, ethyl alcohol, hydrogen fluoride is used otherwise .

The container 7 inside the treatment liquid 6 is evaporated by heating by the heater 8, it is fed into the processing chamber 1 via line 1 0 the steam. The object to be processed in the processing chamber 1 5 is heated to a suitable temperature by the heating plate 4. The object to be treated, by the exposed surface is exposed to the vapor of the treatment liquid 6 introduced into the processing chamber 1, Ru is performed the desired surface treatment. Treated object 5 is taken out of the carrying table 3 to the processing chamber 1 drive, then carries the new object to be processed, repeating the above-mentioned surface treatment process.

Steam amount of the processing chamber 1, the volume of the processing chamber, the manner of installation of the object to be processed, depending on the processing conditions such as the type and speed of the surface treatment, emissions from supply amount and the exhaust valve 1 1 by introducing valve 9 It is controlled by adjusting and.

The temperature of the heating play I, steam treatment liquid 6 on the surface of the object 5 is adjusted so as not to liquefy. For example, the result heating surface temperature of the workpiece is above the boiling point of the treatment liquid, can be reliably prevented liquefaction of the above. Further, in order to perform good surface treatment during the vapor at least a surface treatment in the process chamber 1 it is preferable to maintain a vapor phase, and does not liquefied is cooled in housings 2 internal surface. Therefore, by providing a different number of heating means, or the when also configured to heat the maggots ring 2 itself by using a heating plate or a heater, increasing efficiency for surface treatment, is advantageous.

Furthermore in order to perform the surface treatment of the present invention efficiently, or to reduce the size turned into by the processing chamber 1 volume as possible a housing 2, a high result effective placement of the object in the processing chamber.

Using the surface treatment apparatus of Figure 1, where a single row of experiments using various liquid type as the processing liquid 6, the following results were obtained.

(Example 1)

Using pure water as the processing liquid 6 was introduced into the processing chamber 1 to generate steam. Placing a thin plate of aluminum oxide on the heating plate 4 as an object to be processed product 5 was subjected to 5-minute treatment with the front surface temperature of the thin plate as about 2 0 0 ^. The aluminum oxide thin ^ Thus the contact angle results of measurement by the contact angle meter, before the treatment was the 6 4 °, becomes 6 ° after treatment, it was possible to improve the wettability to water.

When a similar experiment was conducted by changing further treatment liquid 6 in ethyl alcohol, it was possible to carry out surface modification to improve the wettability of the same aluminum oxide sheet surface.

(Example 2)

Like Example 1, using pure water as the processing liquid 6 was introduced into the processing chamber 1 to generate steam. The silicon plate coated with resist is an organic substance as the object 5 is placed on the heating play Bok 4, was treated for 10 minutes the surface temperature of the Regis Bok plate as about 2 0 0 °. As a result, it was possible to remove the Regis Bok from the silicon plate surface.

Furthermore, when the treatment liquid 6 was subjected to the same experiments instead of the hydrogen peroxide solution, it was possible to perform Atsushingu be similarly remove the resist in silicon plate.

(Example 3)

With hydrogen fluoride as the processing liquid 6 was introduced into the processing chamber 1 to generate the steam. The quartz plate as the object 5 is placed on the heating table 4, was treated for 60 minutes the surface temperature of 1 0 0 ° C. As a result, the surface of the quartz plate could and child etching.

The second figure, the structure of a modification of the surface treatment apparatus of Figure 1 is shown schematically. This modification, as a means for heating an object 5, in place of the heating plate air heater 1 2 feeding hot air is provided to blow downward hot air at the top of the processing chamber 1. Is the object 5 of a plurality of plate-like, as easily hit by hot air, are arranged vertically to the mounting base 1 3 on the transport table 3. Thus more to the use of hot air blower 1 2, it is possible to substantially uniformly heat a plurality of object 5 and the processing chamber 1 inside the entire Runode is advantageous for batch processing.

Further, to obtain by using the surface treatment apparatus of FIG. 2, in the same manner as in Example 1 to Example 3 ^ is improving, Atsushingu for each surface treatment of etching was carried out experiments, similarly good results it could be.

The third diagram, the structure of another modification of the surface treatment apparatus of Figure 1 is that is shown schematically. In this modified example, as the means for heating an object 5, it is provided below facing the top of the infrared radiator 1 4 force the treatment chamber 1 such as with reflector infrared lamps instead of the heated play Bok. Immediately above the conveyor table 3 plate-like workpiece which has been horizontally placed on the 5, to place the mask 1 5 having an opening corresponding to the desired processing portion of 該被 treated.

Irradiating quality single infrared to be heated only the desired part of the process this way, introducing the vapor of the treatment liquid 6 into the processing chamber 1 from the steam generator. The object 5, the entire surface of the exposed are exposed to the steam, locally desired surface treatment only heated said processing portion is performed.

In place of the infrared radiator 1 4 can Rukoto using other heat emitting devices such as ultraviolet light irradiation device. UV irradiation device, the temperature difference between the otherwise part with irradiated portion is larger features than in the case of infrared radiator can perform local surface treatment more precisely.

Using a surface treatment apparatus of FIG. 3, where the two lines the same experiment as in Example 1 to Example 3, wettability improvement, Atsushingu were selected with the mask 1 5 of the workpiece for each surface treatment of etching It was only able to obtain good results as well portion. The fourth figure, the structure of the second embodiment of the surface treatment apparatus according to the present invention is schematically illustrated. The surface treatment apparatus is branched gas inlet 1 6 is provided in the conduit 1 0, a gas selected from the outside by adjusting the valve 1 7 and auxiliary supply, and steam treatment liquid 6 in that can be introduced into the mixture to the processing chamber 1, it differs from the device of the first embodiment of the first illustrated.

According to this embodiment, the treatment liquid 6 and the auxiliary gas suitable combination, respectively, by exposing the object to be treated was heated therewith et mixed gas, it is possible to perform more effectively the desired surface treatment . The treatment solution can be used various liquid type as described for the first embodiment. The auxiliary gas, it is possible to select the oxidizing gas or non-oxidizing gas in accordance with the purpose of the process.

For example, a combination of water or hydrogen peroxide and oxygen gas, in combination with hydrogen peroxide or E chill alcohol and nitrogen gas, as possible is possible to improve the wettability. Further, the combination of hydrogen peroxide and oxygen gas or nitrogen gas, it is possible to perform mediation Thing. Further, by are ffl ozone as an auxiliary gas, it is possible to enhance the effect of Atsushingu.

Using the surface treatment apparatus of FIG. 4, some of the treatment liquid 6 and was subjected to experiments combination the auxiliary gas, the following results were obtained.

(Example 4)

Pure water as the processing liquid 6, respectively using oxygen gas as the auxiliary gas was introduced a mixed gas thereof into the processing chamber 1. Placing a thin plate of aluminum oxide on the pressurized heat plate 4 as the object 5 was subjected to a surface treatment by exposure to the mixed gas. This ensures that it was possible to improve the wettability of the oxide Aruminiumu sheet surface.

Further treatment liquid 6 instead of the hydrogen peroxide solution, and was subjected to experiments similar similarly using oxygen gas, it was possible to carry out surface modification to improve the wettability as well. Further, the treatment liquid 6 in ethyl alcohol, and for a similar experiment while changing the auxiliary gas to the nitrogen gas was also able to improve the wettability as well.

(Example 5)

Hydrogen peroxide solution as the processing liquid 6, respectively using oxygen gas as the auxiliary gas was introduced a mixed gas thereof into the processing chamber 1. The silicon plate coated with registry is an organic substance as the object 5 is placed on the heating plate 4 was subjected to a surface treatment. As a result, the resist is removed from the silicon plate surface, it was able to perform Atsushingu. The FIG. 5, the structure of a third embodiment of the surface treatment apparatus according to the present invention is schematically illustrated. The surface treatment apparatus comprises a container 7 containing the treatment liquid 6 is heated pre into the processing chamber 1 - a gas inlet 1 6 for disposed on the bets 4, and supplies the selected gas from the outside auxiliary in that it is directly connected to the housing 2, it differs from the device of the 笫 1 and the second embodiment. According to this embodiment, by this way the vapor of construction and process fluid 6 is generated directly in the processing chamber 1, a conduit 1 0 before Symbol vapor as in the first and second embodiments since risk is not to be cooled while passing, it allows for more efficient surface treatment.

Has been described in detail with reference to preferred embodiments for the present invention, the present invention is by exposure to evaporation of the processing solution and the treated product was heat the steam, relatively easy single steps and apparatus der which the gist to carry out surface treatment for the purpose with is, as possible out be carried out with various modifications and deformation to them in addition to the above embodiments.

For example, by injecting steam treatment liquid using a nozzle fitted with a heater so as not to liquefy, Ru can be locally a surface treatment of the desired portion of the workpiece. Further, the surface treatment apparatus of the second or third embodiment, it is possible to use a heating apparatus shown in FIG. 2 or FIG. 3 in place of the heating plate 5.

Further, particularly when organic material to be removed in the processing object surface has a large amount of deposition is preferably carried out twice or more Atsushingu steps. In this case, in the beginning of the Atsushi ring process using high Atsushingure Bok method, removed in a short time most of the organic matter, and any of the surface treatment method of the present invention described above with at least the last Atsushingu step by employing, can be removed organic residues that can not be removed completely from the object surface to be treated. This makes it possible to Asshingu the object surface to be treated relatively easily and efficiently complete the whole.

Further, by changing the processing solution in the course of surface treatment according to the invention can also be carried out differently surface-treated for the same Over There physical product continuously. Further, by changing the mask in the apparatus of FIG. 2, it is also possible to perform the same or different surface treatments to different parts of the same object to be processed continuously.

Claims

Gen'ao required of range I¾
1. Treatment liquid heated to a to generate steam, a surface treatment method characterized by exposures tables Thus the object to be treated which has been heated to the vapor.
2. The processing object, the surface treatment method according to claim 1, wherein the temperature of the surface is characterized by heating to be equal to or greater than the boiling point of the treatment liquid.
3. The surface processing method according to claim 2 mounting, characterized in that overall heating an object surface.
4. The claimed ¾ 2 3 yourself mounting surface treatment method characterized by heating only an object to be processed surface partially.
5. The surface treatment method according to any one of claims 1 to 4 you, wherein placing the object to be treated in an atmosphere containing the vapor of the treating solution.
6. The treatment solution is pure water, acidic water or alkaline water, before the surface treatment according to any one of claims 1 to 5, characterized in that to improve the wettability of the d processing object ^ Method.
7. The treatment solution is pure water, an acidic water or alkaline water, the of claims 1 to 5, characterized in that mediation single processing object surface, the surface treatment method according to any misalignment.
8. The process liquid is acid, the surface treatment method according to any one of claims 1 to 5 you wherein etching the object surface to be treated.
9. The treatment liquid is an organic solvent, a surface treatment method according to any one of claims 1 to 5, characterized in that to improve the wettability of the object surface to be treated.
1 0. The treatment liquid is an oxidizing solution, the surface treatment method according to any one of claims 1 to 5, characterized in that Atsushingu the object surface to be treated.
1 1. The vapor in the auxiliary gas of the treatment liquid were mixed, the surface treatment according to any one of claims 1 to 4, characterized in that exposing the surface of the Over There management prepared by the heating in the mixed gas Method.
1 2. The treatment liquid pure water, an acidic water or alkaline water, and the auxiliary gas is oxidative gas, according to claim 1 1, characterized in that to improve the wettability of the object surface to be treated the surface treatment method according.
1 3. The treatment solution is an oxidizing solution, and the auxiliary gas is oxidizing gas, before Symbol surface treatment 现方 method c of claim 1 1, wherein the oxidizing treatment object surface
1 4. The treatment solution is an oxidizing solution, and the auxiliary gas is oxidizing gas, before Symbol surface treatment according to claim 1 1, wherein to improve the wettability of the workpiece surface Method.
1 5. The treatment liquid is an organic solvent, and the an auxiliary gas is non-oxidizing gas, the surface treatment method of 猜求 頊 1 1, wherein to improve the wettability of the physical object surface .
1 6. To Asshingu the surface of the object to be treated, 2 [made [pi · 1 or more Asshingu 丄程, at least the surface treatment last the Atsushingu step is characterized that it is a method according ¾1 1, wherein Method.
1 7. A treatment liquid is heated so that steam onset ^ device that generates steam, consists of a heating device for heating an object, that the heated surface of the object to be treated was set to be exposed to the vapor surface treatment apparatus according to claim.
1 8. The treatment solution further comprises a housing defining an atmosphere containing the vapor of the surface treatment according 諧求 claim 1 7, characterized in that an object is placed within the c '
1 9. The heating apparatus, a surface treatment apparatus according to claim 1 7 or claim 1 8, wherein it is a heating plate for mounting the object to be treated.
2 0. The heating apparatus, a surface treatment apparatus according to claim 1 7 or claim 1 8, wherein the a hot air blower for sending the hot air to the object surface to be treated.
2 1. The heating apparatus, a surface treatment apparatus according to claim 1 7 or claim 1 8 wherein you being a device for irradiating the infrared or ultraviolet.
2 2. The surface treatment apparatus according to claim 2 1, wherein further comprising a mask for partially irradiating infrared rays or ultraviolet rays to the surface of the workpiece.
2 3. Surface treatment according to any one of claims 1-7 to claim 2 2, characterized in that it comprises a further gas supply device for supplying an auxiliary gas to be mixed with the vapor of the treatment liquid
PCT/JP1998/000629 1997-02-24 1998-02-16 Surface treatment method and apparatus therefor WO1998037575A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3957997 1997-02-24
JP9/39579 1997-02-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53648098A JP3653735B2 (en) 1997-02-24 1998-02-16 Surface treating method and apparatus

Publications (1)

Publication Number Publication Date
WO1998037575A1 true true WO1998037575A1 (en) 1998-08-27

Family

ID=12557006

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/000629 WO1998037575A1 (en) 1997-02-24 1998-02-16 Surface treatment method and apparatus therefor

Country Status (2)

Country Link
JP (1) JP3653735B2 (en)
WO (1) WO1998037575A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001250773A (en) * 1999-08-12 2001-09-14 Uct Kk Resist film removing device and method
EP1288284A1 (en) * 2000-06-01 2003-03-05 Asahi Kasei Kabushiki Kaisha Cleaning agent, cleaning method and cleaning apparatus
WO2004109779A1 (en) * 2003-06-06 2004-12-16 Tokyo Electron Limited Method for improving surface roughness of processed film of substrate and apparatus for processing substrate
WO2005104194A1 (en) * 2004-04-20 2005-11-03 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2007180554A (en) * 2006-12-25 2007-07-12 Tokyo Electron Ltd Substrate processing apparatus
JP2007266636A (en) * 2007-07-09 2007-10-11 Tokyo Electron Ltd Substrate treatment device
JP2010118681A (en) * 1999-08-12 2010-05-27 Aqua Science Kk Resist film removal apparatus, and resist film removal method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370931A (en) * 1991-06-19 1992-12-24 Hitachi Zosen Corp Cleaning of substrate
JPH05206088A (en) * 1992-01-29 1993-08-13 Fujikura Ltd Method of processing semiconductor
JPH05335293A (en) * 1992-06-03 1993-12-17 Nippon Steel Corp Fabrication method and apparatus for semiconductor device
JPH06306660A (en) * 1993-04-26 1994-11-01 Sumitomo Metal Ind Ltd Method for cleaning sample
JPH07142443A (en) * 1993-06-09 1995-06-02 Texas Instr Inc <Ti> Removing method for hard trench mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370931A (en) * 1991-06-19 1992-12-24 Hitachi Zosen Corp Cleaning of substrate
JPH05206088A (en) * 1992-01-29 1993-08-13 Fujikura Ltd Method of processing semiconductor
JPH05335293A (en) * 1992-06-03 1993-12-17 Nippon Steel Corp Fabrication method and apparatus for semiconductor device
JPH06306660A (en) * 1993-04-26 1994-11-01 Sumitomo Metal Ind Ltd Method for cleaning sample
JPH07142443A (en) * 1993-06-09 1995-06-02 Texas Instr Inc <Ti> Removing method for hard trench mask

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118681A (en) * 1999-08-12 2010-05-27 Aqua Science Kk Resist film removal apparatus, and resist film removal method
JP2001250773A (en) * 1999-08-12 2001-09-14 Uct Kk Resist film removing device and method
KR100892199B1 (en) * 2000-06-01 2009-04-07 아사히 가세이 가부시키가이샤 Cleaning Agent, Cleaning Method and Cleaning Apparatus
EP1288284A1 (en) * 2000-06-01 2003-03-05 Asahi Kasei Kabushiki Kaisha Cleaning agent, cleaning method and cleaning apparatus
EP1288284A4 (en) * 2000-06-01 2004-11-24 Asahi Chemical Ind Cleaning agent, cleaning method and cleaning apparatus
US8529703B2 (en) 2000-06-01 2013-09-10 Asahi Kasei Kabushiki Kaisha Cleaning agent, cleaning method and cleaning apparatus
US7531495B2 (en) 2000-06-01 2009-05-12 Asahi Kasei Kabushiki Kaisha Cleaning agent, cleaning method and cleaning apparatus
WO2004109779A1 (en) * 2003-06-06 2004-12-16 Tokyo Electron Limited Method for improving surface roughness of processed film of substrate and apparatus for processing substrate
US8646403B2 (en) 2003-06-06 2014-02-11 Tokyo Electron Limited Method for improving surface roughness of processed film of substrate and apparatus for processing substrate
US7875420B2 (en) 2003-06-06 2011-01-25 Tokyo Electron Limited Method for improving surface roughness of processed film of substrate and apparatus for processing substrate
US7989156B2 (en) 2004-04-20 2011-08-02 Tokyo Electron Limited Substrate treatment method and substrate treatment apparatus
US7819076B2 (en) 2004-04-20 2010-10-26 Tokyo Electron Limited Substrate treatment method and substrate treatment apparatus
WO2005104194A1 (en) * 2004-04-20 2005-11-03 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP4536711B2 (en) * 2006-12-25 2010-09-01 東京エレクトロン株式会社 The substrate processing apparatus
JP2007180554A (en) * 2006-12-25 2007-07-12 Tokyo Electron Ltd Substrate processing apparatus
JP2007266636A (en) * 2007-07-09 2007-10-11 Tokyo Electron Ltd Substrate treatment device

Also Published As

Publication number Publication date Type
JP3653735B2 (en) 2005-06-02 grant

Similar Documents

Publication Publication Date Title
US5385624A (en) Apparatus and method for treating substrates
US5326406A (en) Method of cleaning semiconductor substrate and apparatus for carrying out the same
US6715498B1 (en) Method and apparatus for radiation enhanced supercritical fluid processing
US5518542A (en) Double-sided substrate cleaning apparatus
US6006763A (en) Surface treatment method
US6776874B2 (en) Processing method and apparatus for removing oxide film
US6029371A (en) Drying treatment method and apparatus
US6582525B2 (en) Methods for processing a workpiece using steam and ozone
US5614026A (en) Showerhead for uniform distribution of process gas
US4885047A (en) Apparatus for photoresist stripping
US6869487B1 (en) Process and apparatus for treating a workpiece such as a semiconductor wafer
US20080131623A1 (en) Method and apparatus to apply surface release coating for imprint mold
US6539956B1 (en) Method and device for drying substrates
US4804431A (en) Microwave plasma etching machine and method of etching
US6299696B2 (en) Substrate processing apparatus and substrate processing method
US5554257A (en) Method of treating surfaces with atomic or molecular beam
US20040159335A1 (en) Method and apparatus for removing organic layers
US20020033186A1 (en) Processes and apparatus for treating electronic components
JP2004343017A (en) Plasma treatment device
JPH02114525A (en) Removal of organic compound film and its removing device
US5226056A (en) Plasma ashing method and apparatus therefor
US20080299780A1 (en) Method and apparatus for laser oxidation and reduction
US20040157430A1 (en) Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
JP2001137800A (en) Apparatus and method for treating substrate
US20070065593A1 (en) Multi-source method and system for forming an oxide layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

WWE Wipo information: entry into national phase

Ref document number: 09171551

Country of ref document: US