WO1998023018A1 - Dispositif de protection contre les surtensions transitoires et son procede de realisation - Google Patents

Dispositif de protection contre les surtensions transitoires et son procede de realisation Download PDF

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Publication number
WO1998023018A1
WO1998023018A1 PCT/US1997/021117 US9721117W WO9823018A1 WO 1998023018 A1 WO1998023018 A1 WO 1998023018A1 US 9721117 W US9721117 W US 9721117W WO 9823018 A1 WO9823018 A1 WO 9823018A1
Authority
WO
WIPO (PCT)
Prior art keywords
gap
transient voltage
substrate
voltage protection
ceramic
Prior art date
Application number
PCT/US1997/021117
Other languages
English (en)
Inventor
Joan L. Winnett
Stephen J. Whitney
Edward G. Glass
Karen P. Shrier
Original Assignee
Surgx Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surgx Corporation filed Critical Surgx Corporation
Priority to EP97948374A priority Critical patent/EP1010228B1/fr
Priority to JP52383498A priority patent/JP4397972B2/ja
Priority to DE69737424T priority patent/DE69737424T2/de
Priority to AU54459/98A priority patent/AU5445998A/en
Publication of WO1998023018A1 publication Critical patent/WO1998023018A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/08—Overvoltage arresters using spark gaps structurally associated with protected apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T21/00—Apparatus or processes specially adapted for the manufacture or maintenance of spark gaps or sparking plugs

Definitions

  • Transient voltage protection devices were developed in response to the need to protect the ever-expanding number of electronic devices upon which today's technological society depends from high voltages. Electrical transient voltages can be created by, for example, electrostatic discharge or transients propagated by human contact. Examples of electrical equipment which typically employ transient voltage protection equipment include, telecommunications systems, computer systems and control systems. Recent developments in transient voltage protection technology have centered around usage of a material having a variable impedance which interconnects, for example, a signal conductor with a ground conductor. The variable impedance material exhibits a relatively high resistance (referred to herein as the "off-state”) when the voltage and/or current passing through the signal conductor is within a specified range, during which time the signal conductor is ungrounded.
  • variable impedance material and the transient voltage protection device generally
  • the electrical characteristics of the variable impedance material will change such that the material exhibits a relatively low impedance (referred to herein as the "on-state").
  • the pulse or transient voltage experienced by the signal conductor will be shunted to the ground conductor, and the voltage associated witih the pulse will be clamped at a relatively low value for the duration of the pulse. In this way, the circuitry associated with the signal conductor is protected.
  • the variable impedance material will recover after the voltage or current pulse has passed and return to its high impedance state. Thus, the signal conductor and associated circuitry can continue normal operation shortly after the pulse has ended.
  • variable impedance materials also sometimes referred to as “overstress responsive compositions”
  • These materials can, for example, be fabricated as a mixture of conductive and/or semiconductive particles suspended as a matrix within a binding material, which can, for example, be an insulative resin.
  • a binding material which can, for example, be an insulative resin.
  • Numerous examples of these types of materials can be found in the patent literature including U.S. Patent Nos. 5,393,596 and 5,260,848 to Childers, U.S. Patent Nos. 4,977,357 and 5,068,634 to Shrier and U.S. Patent No. 5,294,374 to Martinez, the disclosures of which are incorporated here by reference.
  • U.S. Patent No. 5,278,535 to Xu et al. describes an electrical overstress pulse protection device which employs a variable impedance material.
  • Xu et al. provide a thin flexible laminate for overlay application on the pins of a connector.
  • the laminate includes an electrically insulating substrate, a conductive lamina of apertured pin receiving pads, a separate ground strip adjacent the pads, and an electrically insulating cover.
  • An electrical overstress pulse responsive composite material is positioned such that it bridges the pads and the ground strip.
  • This patent to Xu et al. uses conventional semiconductor fabrication techniques to create the pulse protection device including forming the substrate from a conventional resin material, e.g., of the type typically used for substrates of printed circuit boards.
  • Xu et al. describe forming the conductive elements using etching techniques, which are also well known in the semiconductor fabrication. While these techniques may be appropriate when working with thin film metal conductors, Applicants have determined that other techniques and materials are more desirable when manufacturing signal and ground conductive elements having a greater thickness, e.g., on the order of 0.5-1.0 mils, or more.
  • the precision of the gap dimensions are significant because the electrical characteristics of the device, e.g., the trigger voltage, clamp voltage and current density, are, in part, determined by the size and shape of the gap. Accordingly, it would be desirable to develop new techniques for making transient voltage protection devices wherein the gap between a signal conductor and a ground conductor is formed with a high degree of precision, which precision is repeatable in a manufacturing environment and yet techniques are not so expensive that the resulting transient voltage protection devices cannot compete on a cost basis in the marketplace. At the same time, it would be desirable to optimize the materials used to make such devices to achieve these same objectives.
  • a method for fabricating a transient voltage protection device including, for example, a ground conductor and at least one other conductor comprises the steps of: providing a substrate; forming a conductive layer on the substrate; and dicing the conductive layer on the substrate to create a gap which separates the conductive layer into at least the ground conductor and the at least one other conductor.
  • the substrate can be formed from a ceramic material or non-ceramic materials such as FR-4. If a ceramic material is used for the substrate, then it is preferable that such a ceramic material have a density of less than about 3.8 gms/cm 3 . For example, forsterite and calcium borosilicate are two such ceramic materials.
  • a device comprises a ceramic substrate having a density of less than about 3.8 gms/cm, a ground conductor and at least one other conductor formed on the ceramic substrate such that they are substantially co-planar and are separated from one another by a gap; and a variable impedance material disposed within the gap and in contact with both the ground conductor and the at least one other conductor.
  • the ceramic substrate will preferably have a bulk density of less than 3.5 gms/cm 3 and optimally a density of less than 3.0 gms/cm 3 .
  • Applicants have identified forsterite (2MgSi ⁇ 2 ) having a bulk density of 2.8 gms/cm 3 and calcium borosilicate, having a bulk density of 2.5 gms/cm 3 as materials which are well suited for substrates according to the present invention.
  • forsterite (2MgSi ⁇ 2 ) having a bulk density of 2.8 gms/cm 3
  • calcium borosilicate having a bulk density of 2.5 gms/cm 3 as materials which are well suited for substrates according to the present invention.
  • Figure 1A illustrates a portion of a discrete transient voltage protection element
  • Figure IB illustrates the discrete transient voltage protection element of Figure 1A including the variable impedance material
  • FIGS. 2A-2D depict discrete transient voltage protection elements at various stages of manufacture used to illustrate methods of making such elements according to the present invention
  • Figure 3 illustrates a diamond dicing saw used to dice a gap between conductors according to the present invention
  • FIGS 4A-4F illustrate a transient voltage protection device according to the present invention which is adapted to be attached to a connector
  • Figure 5 illustrates a graph of current and voltage associated with a test of a device constructed in accordance with the present invention.
  • Figure 1 shows a discrete transient voltage protection element, i.e., a transient voltage protection element which can be used as part of a circuit board, however other applications of the present invention are contemplated, e.g., using transient voltage protection devices according to the present invention as part of a connector.
  • the discrete transient voltage protection element includes a substrate 10 on which two conductors 12 and 14 are formed.
  • conductor 12 is the ground conductor
  • conductor 14 is a signal or power carrying conductor.
  • a gap 16 is formed between conductors 12 and 14.
  • FIG. 1A illustrates the gap as extending to the surface of substrate 10
  • preferred embodiments of the present invention include extending the gap into the substrate.
  • the electrical characteristics of the transient voltage protection element will depend, in part, on the precision with which gap 16 is formed.
  • precision of the depth, width and uniformity of edges 18 and 20 referred to herein as "edge acuity" associated with gap 16 is carefully controlled by way of the techniques described below.
  • Figure IB illustrates the discrete transient voltage protection element of Figure 1A, wherein a variable impedance material 22 fills the gap 16.
  • a variable impedance material 22 fills the gap 16.
  • any known variable impedance material may be used, including those described in the above-incorporated by reference patents, as well as those fabricated from dielectric polymers, glass, ceramic or composites thereof. These materials may, for example, include or be mixed with conductive and/or semiconductive particles in order to provide the desired electrical characteristics.
  • a currently preferred variable impedance material is that manufactured by SurgX Corporation and identified by SurgX as Formulation #F1-6B.
  • transient voltage protection devices a method for manufacturing transient voltage protection devices will now be described with respect to Figures 2A-2F. Many such devices can be fabricated on a single wafer. The process begins by selecting a suitable material for the substrate wafer 30. Although illustrated as a rectangle for simplicity in Figure 2A, those skilled in the art will appreciate that the shape of the wafer provided by a wafer manufacturer may vary and can, for example, be circular. Since Applicants have discovered that forming the gap by dicing is a preferred technique to form the desired precisely dimensioned gap between conductors, a ceramic or glass-based material is preferred for substrate 30.
  • ceramic and glass-based materials are optimal from a manufacturing point of view.
  • ceramic and glass-based materials should be selected which have a sufficiently low density that a diamond dicing saw can create the gap (1) with sufficient edge acuity and (2) without wearing out the saw so rapidly as to be economically unfeasible.
  • preferable ceramics and/or glass-based materials will have a density of less than 3.8 gms/cm 3 , preferably less than 3.5 gms/cm 3 and optimally a density of less than 3.0 gms/cm 3 .
  • forsterite (2MgSiO 2 ) having a bulk density of 2.8 gms/cm 3 and calcium borosilicate, having a bulk density of 2.5 gms/cm 3 as materials which are well suited for substrates according to the present invention.
  • any ceramic e.g., a material within the ternary system MgO-Al 2 O 3 -SiO 2 system or other materials having similar properties, or glass composite having a sufficiently low bulk density and being otherwise amenable to dicing can be used as a substrate in accordance with the present invention.
  • the next step is to pattern the substrate with metallization.
  • the metallization can take the form of elongated lines 32 spaced apart on substrate 30 by areas 34.
  • the metallization lines 32 can be formed by silk screening silver palladium onto the substrate 30.
  • other conductive materials could be used including, for example, copper, gold, nickel, etc.
  • the width and thickness of the lines 32 can be chosen based on the capabilities desired for the discrete transient voltage protection elements to be created. According to one exemplary embodiment, Applicants have found that a width of about 0.040 inches and a thickness of between 0.5 - 1.0 mils, provide good performance, however those skilled in the art will appreciate that these values are purely for illustration herein.
  • the dicing operations are performed to both form the gaps between the conductors and singulate the substrate wafer 30 into its individual discrete transient voltage protection devices.
  • Applicants have selected dicing over other techniques which could be used to form the gap between the conductors, e.g., cutting the gap with a laser, for its precision with respect to gap width, depth and edge acuity. Details of diamond dicing techniques which can be used to cut the gaps and singulate the wafer substrate 30 are provided below.
  • a single discrete device cut from portion 36 of wafer substrate 30 is blown-up as Figure 2C.
  • This device was cut from wafer substrate 30 by dicing horizontally across the wafer substrate 30 along the areas 34 and vertically across metallization 32.
  • dicing a gap 40 partially through the wafer substrate 30 and completely through metallization 32, two separate conductors 42 and 44 are formed, one of which can be grounded when attached to a printed circuit board (not shown).
  • the gap 40 can be diced so as to have any desired width, for example, between 0.5 and 3.0 mils, preferably between 0.8 and 1.1 mils and most preferably about 1 mil. Those skilled in the art will appreciate that other gap widths may be desired, for example the gap width can be increased to increase the clamp voltage or simply to render manufacturing less complex, and that such variations are within the scope of the present invention.
  • the device can then be terminated by capping each end with a conductive material 46.
  • the gap is then filled with a variable impedance material 48 as illustrated in
  • variable impedance material 48 can be applied to bridge the gap 40 and have an approximately circular footprint thereon of approximately 0.050 inches.
  • the variable impedance material 48 is forced into the gap 40 using a syringe so that the material substantially completely fills gap 40.
  • the gap 40 can be diced below the surface of the substrate wafer 30. For example, the gap can extend about 0.005 inches beyond the metallization into the substrate wafer 30.
  • Dicing is the preferred technique for forming the gap between the conductors into which the variable impedance material is introduced due to the precision with which the gap can thus be manufactured, amongst other reasons. Dicing involves applying a compressive force to a material such that it chips away to form an opening. Thus, in order to obtain a gap with sufficient precision in terms of width, depth and edge acuity, the parameters of the dicing operation should be carefully controlled.
  • a diamond dicing saw is used as illustrated in Figure 3.
  • the saw includes a saw hub 50 and a spindle 52 on which the saw blade 54 is rotatably mounted. Alternatively, a hubless saw can be used.
  • the saw blade 54 can, for example be 1 mil thick and is, preferably, electroplated with a solution of nickel and diamond particles.
  • the size of the diamond particles affects the size of the chips and, thus, the edge acuity. Accordingly, Applicants have found that the diamond particles should preferably be 5 microns or less. Other dicing parameters will also impact the precision of the gap. In particular, the exposure ("E" in Figure 3) of the blade 54 beyond the hub 50 should be minimized to avoid blade wobble and associated inaccuracies in the gap width. Moreover, the feed speed of the substrate through the saw and the spindle speed of the blade should also be considered as will be appreciated by those skilled in the art.
  • the connector-related device will be used to permit at least one connector pin to pass through a through-hole in the device, at least one ground pin passing through at least one ground through-hole in the device, and the ground through-hole(s) in the device will be electrically isolated from the other through-hole(s) until an over- voltage condition is experienced.
  • the ground through-hole(s) in the device will be electrically isolated from the other through-hole(s) until an over- voltage condition is experienced.
  • FIG 4 A depicts a transient voltage protection device for an RJ-11 type connector according to an exemplary embodiment of the present invention.
  • a ceramic or glass-based substrate 60 has a metallization layer 62 screened thereon as described above.
  • the conductors are patterned to provide for through-holes which will mate with the pins of an RJ-11 type connector when the device is attached thereto.
  • two gaps 64 and 66 are diced through the substrate 60 and metallization layer 62. This has the affect of separating the six conductive portions surrounding the through-hole areas from a central conductive "bus" 68.
  • a conductive material 70 is disposed between the conductor surrounding through-hole area (i.e,. the through-hole for the ground pin of the RJ-11 connector) and the conductive "bus" 68.
  • This establishes conductive "bus" 68 as a grounded plane which is proximate each of the conductors associated with the other through-hole areas.
  • An alternative embodiment is illustrated in Figure 4D, wherein the pins, e.g., pin 67, mate with saddles, e.g., saddle 69, formed in the ceramic substrate 60.
  • the pins can be soldered to the metallized surfaces of the saddles, as represented by solder patch 71.
  • a variable impedance material 74 is deposited over the area including the gaps 62 and 64 and forced into the gap to provide an over-voltage and/or responsive electrical connection between the conductive "bus" 68 and each of the conductors 76-84, each of which will be associated with a corresponding pin of the RJ-11 connector to which the device is attached.
  • an encapsulating material 86 can be provided to cover the variable impedance material 74 to, for example, protect the variable impedance material and prevent electrical charges from other circuitry from being applied across the variable impedance material.
  • the through-holes can be made in the area 72 and within conductors 76-84 by drilling, laser micromachining or other methods recognized by those skilled in the art.
  • the size of the through-holes will depend on the diameter of the leads extending from the particular connector.
  • the through-hole hole diameter can range from 20 mils to 40 mils, but more typically are 30 mils in diameter.
  • the device 88 illustrated in Figure 4E, as well as other exemplary embodiments wherein the transient voltage suppression device is intended to be used in connection with a connector having pins or leads, can then be mounted in mating relationship with the pins or leads and the substrate can be affixed to the connector body using solder or other adhering techniques.
  • Figure 5 is a graph of current through, and voltage across, a device constructed in accordance with the present invention as illustrated and described with respect to Figures 2A-2D.
  • a 1000-4-2 standard 8 kV pulse as specified by the Electrotechnical Commission (IEC).
  • This standard pulse is intended to simulate the pulse which would be applied to electrical circuitry by the discharge of static electricity associated with a human body.
  • the upper waveform (I) represents the current conducted by the transient voltage suppression device, which flows into ground, while the lower waveform depicts the voltage across the device during the test.
  • the device triggered (i.e., entered its on-state) at 188 V.
  • the pulse was clamped at 41.3 V and peak current was 42.8 A.
  • devices constructed in accordance with the present invention can be seen from Figure 5 to rapidly limit e transient voltage to a value which is substantially less than that of the prospective pulse value.
  • devices constructed in accordance with the present invention exhibit relatively low leakage current and low capacitance.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

L'invention concerne un procédé de réalisation d'un dispositif de protection contre les surtensions transitoires. Ce procédé consite à former des lignes conductrices (12, 14) sur un substrat (10), sur lequel les lignes forment des trajets conducteurs entre des composants électroniques. Le procédé consiste ensuite à former un espace de 3 mils, ou moins, sur au moins une des lignes en coupant la ligne avec une scie ou un laser. Le procédé consiste enfin à couvrir ou remplir l'espace avec un polymère pur, non chargé, un verre ou une céramique (22) pour éviter toute contamination de l'air dans l'espace.
PCT/US1997/021117 1996-11-19 1997-11-19 Dispositif de protection contre les surtensions transitoires et son procede de realisation WO1998023018A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP97948374A EP1010228B1 (fr) 1996-11-19 1997-11-19 Dispositif de protection contre les surtensions transitoires et son procede de realisation
JP52383498A JP4397972B2 (ja) 1996-11-19 1997-11-19 過渡電圧保護素子およびその製造方法
DE69737424T DE69737424T2 (de) 1996-11-19 1997-11-19 Schutzvorrichtung gegen transiente spannungen und verfahren zu deren herstellung
AU54459/98A AU5445998A (en) 1996-11-19 1997-11-19 A transient voltage protection device and method of making same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3131796P 1996-11-19 1996-11-19
US60/031,317 1996-11-19

Publications (1)

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WO1998023018A1 true WO1998023018A1 (fr) 1998-05-28

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EP (1) EP1010228B1 (fr)
JP (1) JP4397972B2 (fr)
AT (1) ATE355645T1 (fr)
AU (1) AU5445998A (fr)
DE (1) DE69737424T2 (fr)
WO (1) WO1998023018A1 (fr)

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US6566118B1 (en) 1997-09-05 2003-05-20 Targeted Genetics Corporation Methods for generating high titer helper-free preparations of released recombinant AAV vectors
US6989264B2 (en) 1997-09-05 2006-01-24 Targeted Genetics Corporation Methods for generating high titer helper-free preparations of released recombinant AAV vectors
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US7610145B2 (en) 2003-07-25 2009-10-27 Triangle Software Llc System and method for determining recommended departure time
US7695644B2 (en) 1999-08-27 2010-04-13 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
US7793236B2 (en) 2007-06-13 2010-09-07 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
US7825491B2 (en) 2005-11-22 2010-11-02 Shocking Technologies, Inc. Light-emitting device using voltage switchable dielectric material
US7968015B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles
US8117743B2 (en) 1999-08-27 2012-02-21 Shocking Technologies, Inc. Methods for fabricating current-carrying structures using voltage switchable dielectric materials
US8163595B2 (en) 2006-09-24 2012-04-24 Shocking Technologies, Inc. Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8310064B2 (en) 2005-11-22 2012-11-13 Shocking Technologies, Inc. Semiconductor devices including voltage switchable materials for over-voltage protection
US8345404B2 (en) 2006-10-31 2013-01-01 Panasonic Corporation Anti-static part and its manufacturing method
US8362871B2 (en) 2008-11-05 2013-01-29 Shocking Technologies, Inc. Geometric and electric field considerations for including transient protective material in substrate devices
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
WO2014168953A1 (fr) 2013-04-08 2014-10-16 University Of Iowa Research Foundation Vecteur chimérique de parvovirus à virus adéno-asocié /bocavirus
US8958988B2 (en) 2002-03-05 2015-02-17 Pelmorex Canada Inc. Method for choosing a traffic route
US8968606B2 (en) 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
US8982116B2 (en) 2009-03-04 2015-03-17 Pelmorex Canada Inc. Touch screen based interaction with traffic data
US9046924B2 (en) 2009-03-04 2015-06-02 Pelmorex Canada Inc. Gesture based interaction with traffic data
US9053844B2 (en) 2009-09-09 2015-06-09 Littelfuse, Inc. Geometric configuration or alignment of protective material in a gap structure for electrical devices
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
US9208930B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductive core shelled particles
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9293039B2 (en) 2012-01-27 2016-03-22 Pelmorex Canada Inc. Estimating time travel distributions on signalized arterials
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9390620B2 (en) 2011-05-18 2016-07-12 Pelmorex Canada Inc. System for providing traffic data and driving efficiency data
US9448690B2 (en) 2009-03-04 2016-09-20 Pelmorex Canada Inc. Controlling a three-dimensional virtual broadcast presentation
WO2016187017A1 (fr) 2015-05-15 2016-11-24 Mcivor R Scott Virus adéno-associé pour une administration thérapeutique au système nerveux central
WO2017139381A1 (fr) 2016-02-08 2017-08-17 University Of Iowa Research Foundation Procédés pour produire des virus adéno-associés/bocavirus parvovirus chimériques
WO2018093925A1 (fr) 2016-11-15 2018-05-24 Laoharawee Kanut Procédé d'amélioration de la fonction neurologique dans la mpsi et la mpsii et d'autres troubles neurologiques
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US10223909B2 (en) 2012-10-18 2019-03-05 Uber Technologies, Inc. Estimating time travel distributions on signalized arterials
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WO2022011099A1 (fr) 2020-07-08 2022-01-13 Regents Of The University Of Minnesota Hexosaminidase modifiée et ses utilisations
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WO2022221684A1 (fr) 2021-04-15 2022-10-20 Spirovant Sciences, Inc. Procédés et compositions pour le traitement de la fibrose kystique
WO2024086747A1 (fr) 2022-10-19 2024-04-25 Affinia Therapeutics Inc. Aavs recombinants à tropisme et spécificité améliorés
WO2024092171A1 (fr) 2022-10-26 2024-05-02 University Of Iowa Research Foundation Procédé d'administration de grands gènes à l'aide d'un virus et d'un système de recombinaison d'adn

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612976B2 (en) * 2005-07-21 2009-11-03 Cooper Technologies Company Transient voltage protection circuit boards and manufacturing methods
KR101771726B1 (ko) * 2012-06-18 2017-08-25 삼성전기주식회사 정전기 방지 소자 및 이를 포함하는 복합 전자 부품

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676742A (en) * 1971-05-24 1972-07-11 Signetics Corp Means including a spark gap for protecting an integrated circuit from electrical discharge
US4586105A (en) * 1985-08-02 1986-04-29 General Motors Corporation High voltage protection device with a tape covered spark gap
US5477407A (en) * 1993-12-17 1995-12-19 Fujitsu Limited Protection circuit for protecting a semiconductor device from a voltage surge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676742A (en) * 1971-05-24 1972-07-11 Signetics Corp Means including a spark gap for protecting an integrated circuit from electrical discharge
US4586105A (en) * 1985-08-02 1986-04-29 General Motors Corporation High voltage protection device with a tape covered spark gap
US5477407A (en) * 1993-12-17 1995-12-19 Fujitsu Limited Protection circuit for protecting a semiconductor device from a voltage surge

Cited By (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325299A2 (fr) 1997-09-05 2011-05-25 Targeted Genetics Corporation Procédés de génération de préparations de vecteurs AAV recombinants dont le titre est élevé et qui sont exemptes de virus assistant
US6989264B2 (en) 1997-09-05 2006-01-24 Targeted Genetics Corporation Methods for generating high titer helper-free preparations of released recombinant AAV vectors
US6995006B2 (en) 1997-09-05 2006-02-07 Targeted Genetics Corporation Methods for generating high titer helper-free preparations of released recombinant AAV vectors
EP1944362A2 (fr) 1997-09-05 2008-07-16 Targeted Genetics Corporation Procédés de génération de préparations de vecteurs AAV recombinants dont le titre est élevé et qui sont exemptes de virus assistant
US6566118B1 (en) 1997-09-05 2003-05-20 Targeted Genetics Corporation Methods for generating high titer helper-free preparations of released recombinant AAV vectors
EP1930418A1 (fr) 1998-09-04 2008-06-11 Targeted Genetics Corporation Procédés pour produire des préparations de vecteurs AAV recombinants de forte teneur dépourvues de virus assistants
EP2942393A1 (fr) 1998-09-04 2015-11-11 Genzyme Corporation Procédés pour produire des préparations de vecteurs aav recombinants de forte teneur dépourvues de virus assistants
US7695644B2 (en) 1999-08-27 2010-04-13 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
US9144151B2 (en) 1999-08-27 2015-09-22 Littelfuse, Inc. Current-carrying structures fabricated using voltage switchable dielectric materials
US8117743B2 (en) 1999-08-27 2012-02-21 Shocking Technologies, Inc. Methods for fabricating current-carrying structures using voltage switchable dielectric materials
US9368029B2 (en) 2002-03-05 2016-06-14 Pelmorex Canada Inc. GPS generated traffic information
US9640073B2 (en) 2002-03-05 2017-05-02 Pelmorex Canada Inc. Generating visual information associated with traffic
US9489842B2 (en) 2002-03-05 2016-11-08 Pelmorex Canada Inc. Method for choosing a traffic route
US9401088B2 (en) 2002-03-05 2016-07-26 Pelmorex Canada Inc. Method for predicting a travel time for a traffic route
US9082303B2 (en) 2002-03-05 2015-07-14 Pelmorex Canada Inc. Generating visual information associated with traffic
US9602977B2 (en) 2002-03-05 2017-03-21 Pelmorex Canada Inc. GPS generated traffic information
US9070291B2 (en) 2002-03-05 2015-06-30 Pelmorex Canada Inc. Method for predicting a travel time for a traffic route
US8958988B2 (en) 2002-03-05 2015-02-17 Pelmorex Canada Inc. Method for choosing a traffic route
US9644982B2 (en) 2003-07-25 2017-05-09 Pelmorex Canada Inc. System and method for delivering departure notifications
US7610145B2 (en) 2003-07-25 2009-10-27 Triangle Software Llc System and method for determining recommended departure time
US9127959B2 (en) 2003-07-25 2015-09-08 Pelmorex Canada Inc. System and method for delivering departure notifications
US7702452B2 (en) 2003-07-25 2010-04-20 Triangle Software Llc System and method for determining a prediction of average speed for a segment of roadway
US8310064B2 (en) 2005-11-22 2012-11-13 Shocking Technologies, Inc. Semiconductor devices including voltage switchable materials for over-voltage protection
US7825491B2 (en) 2005-11-22 2010-11-02 Shocking Technologies, Inc. Light-emitting device using voltage switchable dielectric material
US7981325B2 (en) 2006-07-29 2011-07-19 Shocking Technologies, Inc. Electronic device for voltage switchable dielectric material having high aspect ratio particles
US7968014B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
US7968010B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Method for electroplating a substrate
US7968015B2 (en) 2006-07-29 2011-06-28 Shocking Technologies, Inc. Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles
US8163595B2 (en) 2006-09-24 2012-04-24 Shocking Technologies, Inc. Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
US8345404B2 (en) 2006-10-31 2013-01-01 Panasonic Corporation Anti-static part and its manufacturing method
US7793236B2 (en) 2007-06-13 2010-09-07 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
US9208930B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductive core shelled particles
US8362871B2 (en) 2008-11-05 2013-01-29 Shocking Technologies, Inc. Geometric and electric field considerations for including transient protective material in substrate devices
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US9448690B2 (en) 2009-03-04 2016-09-20 Pelmorex Canada Inc. Controlling a three-dimensional virtual broadcast presentation
US10289264B2 (en) 2009-03-04 2019-05-14 Uber Technologies, Inc. Controlling a three-dimensional virtual broadcast presentation
US9046924B2 (en) 2009-03-04 2015-06-02 Pelmorex Canada Inc. Gesture based interaction with traffic data
US8982116B2 (en) 2009-03-04 2015-03-17 Pelmorex Canada Inc. Touch screen based interaction with traffic data
US8968606B2 (en) 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
US9053844B2 (en) 2009-09-09 2015-06-09 Littelfuse, Inc. Geometric configuration or alignment of protective material in a gap structure for electrical devices
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9390620B2 (en) 2011-05-18 2016-07-12 Pelmorex Canada Inc. System for providing traffic data and driving efficiency data
US9547984B2 (en) 2011-05-18 2017-01-17 Pelmorex Canada Inc. System for providing traffic data and driving efficiency data
US9293039B2 (en) 2012-01-27 2016-03-22 Pelmorex Canada Inc. Estimating time travel distributions on signalized arterials
US10971000B2 (en) 2012-10-18 2021-04-06 Uber Technologies, Inc. Estimating time travel distributions on signalized arterials
US10223909B2 (en) 2012-10-18 2019-03-05 Uber Technologies, Inc. Estimating time travel distributions on signalized arterials
WO2014168953A1 (fr) 2013-04-08 2014-10-16 University Of Iowa Research Foundation Vecteur chimérique de parvovirus à virus adéno-asocié /bocavirus
EP3622821A1 (fr) 2013-05-15 2020-03-18 Regents of the University of Minnesota Transfert génique au système nerveux central à médiation par un virus adéno-associé
WO2016187017A1 (fr) 2015-05-15 2016-11-24 Mcivor R Scott Virus adéno-associé pour une administration thérapeutique au système nerveux central
EP4000631A1 (fr) 2015-05-15 2022-05-25 REGENXBIO Inc. Virus adéno-associé pour une administration thérapeutique au système nerveux central
WO2017139381A1 (fr) 2016-02-08 2017-08-17 University Of Iowa Research Foundation Procédés pour produire des virus adéno-associés/bocavirus parvovirus chimériques
WO2018093925A1 (fr) 2016-11-15 2018-05-24 Laoharawee Kanut Procédé d'amélioration de la fonction neurologique dans la mpsi et la mpsii et d'autres troubles neurologiques
WO2018132747A1 (fr) 2017-01-13 2018-07-19 University Of Iowa Research Foundation Petit arn non codant pour bocaparvovirus et ses utilisations
WO2020214668A1 (fr) 2019-04-15 2020-10-22 University Of Iowa Research Foundation Compositions et méthodes de traitement de la fibrose kystique
WO2020214672A1 (fr) 2019-04-15 2020-10-22 University Of Iowa Research Foundation Procédés et compositions pour expression de transgène
WO2021072115A1 (fr) 2019-10-08 2021-04-15 Regents Of The University Of Minnesota Édition du génome humain à médiation par crispr avec des vecteurs
WO2022006253A2 (fr) 2020-06-30 2022-01-06 University Of Iowa Research Foundation Procédés et compositions pour l'administration de vecteurs viraux recombinants
WO2022011099A1 (fr) 2020-07-08 2022-01-13 Regents Of The University Of Minnesota Hexosaminidase modifiée et ses utilisations
WO2022047201A1 (fr) 2020-08-27 2022-03-03 University Of Iowa Research Foundation Invalidation génique pour le traitement du glaucome
WO2022170082A1 (fr) 2021-02-05 2022-08-11 Regents Of The University Of Minnesota Méthodes de prévention de défauts cardiaques ou squelettiques dans des maladies comprenant des mucopolysaccharidoses
WO2022221684A1 (fr) 2021-04-15 2022-10-20 Spirovant Sciences, Inc. Procédés et compositions pour le traitement de la fibrose kystique
WO2024086747A1 (fr) 2022-10-19 2024-04-25 Affinia Therapeutics Inc. Aavs recombinants à tropisme et spécificité améliorés
WO2024092171A1 (fr) 2022-10-26 2024-05-02 University Of Iowa Research Foundation Procédé d'administration de grands gènes à l'aide d'un virus et d'un système de recombinaison d'adn

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ATE355645T1 (de) 2006-03-15
EP1010228B1 (fr) 2007-02-28
EP1010228A1 (fr) 2000-06-21
DE69737424T2 (de) 2007-06-21
AU5445998A (en) 1998-06-10
DE69737424D1 (de) 2007-04-12
JP4397972B2 (ja) 2010-01-13
EP1010228A4 (fr) 2000-06-21
JP2001504635A (ja) 2001-04-03

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